Продукція > NEXPERIA > Всі товари виробника NEXPERIA (81151) > Сторінка 392 з 1353

Обрати Сторінку:   [  << Попередня Сторінка ]  1 135 270 387 388 389 390 391 392 393 394 395 396 397 405 540 675 810 945 1080 1215 1350 1353  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
PSMN1R0-40YSHX NEXPERIA PSMN1R0-40YSH.pdf PSMN1R0-40YSHX SMD N channel transistors
товар відсутній
PSMN1R1-25YLC,115 NEXPERIA PSMN1R1-25YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1318A; 215W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1318A
Power dissipation: 215W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 0.95mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R1-30PL,127 PSMN1R1-30PL,127 NEXPERIA PSMN1R1-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 1609A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 243nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 7-14 дні (днів)
1+356.78 грн
3+ 309.55 грн
5+ 226.68 грн
12+ 214.22 грн
PSMN1R1-40BS,118 NEXPERIA PSMN1R1-40BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1320A; 306W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 1320A
Power dissipation: 306W
Gate charge: 136nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 40V
кількість в упаковці: 1 шт
товар відсутній
PSMN1R2-25YL,115 PSMN1R2-25YL,115 NEXPERIA PSMN1R2-25YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 121W
Case: LFPAK56E; PowerSO8; SOT1023
Mounting: SMD
On-state resistance: 2.1mΩ
Kind of package: reel; tape
Power dissipation: 121W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 100A
Gate charge: 105nC
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
PSMN1R2-25YLC,115 NEXPERIA PSMN1R2-25YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1133A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1133A
Power dissipation: 179W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
PSMN1R2-25YLDX NEXPERIA PSMN1R2-25YLD.pdf PSMN1R2-25YLDX SMD N channel transistors
товар відсутній
PSMN1R2-30YLC,115 NEXPERIA PSMN1R2-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1237A; 215W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1237A
Power dissipation: 215W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R2-30YLDX NEXPERIA PSMN1R2-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 209A; Idm: 1181A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 209A
Pulsed drain current: 1181A
Power dissipation: 194W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 2.05mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
PSMN1R2-55SLHAX NEXPERIA PSMN1R2-55SLH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 284A; Idm: 1588A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 284A
Pulsed drain current: 1588A
Power dissipation: 375W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 395nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R3-30YL,115 PSMN1R3-30YL,115 NEXPERIA PSMN1R3-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 121W
Case: LFPAK56E; PowerSO8; SOT1023
Mounting: SMD
On-state resistance: 2.8mΩ
Kind of package: reel; tape
Power dissipation: 121W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 100A
Gate charge: 0.1µC
Drain-source voltage: 30V
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1500 шт
товар відсутній
PSMN1R4-30YLDX NEXPERIA PSMN1R4-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1019A; 166W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1019A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 54.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R4-40YLDX NEXPERIA PSMN1R4-40YLD.pdf PSMN1R4-40YLDX SMD N channel transistors
товар відсутній
PSMN1R5-30BLEJ NEXPERIA PSMN1R5-30BLE.pdf PSMN1R5-30BLEJ SMD N channel transistors
товар відсутній
PSMN1R5-30YL,115 NEXPERIA PSMN1R5-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 790A; 109W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 790A
Power dissipation: 109W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R5-30YLC,115 NEXPERIA PSMN1R5-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; Idm: 1016A; 179W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 1.65mΩ
Kind of package: reel; tape
Power dissipation: 179W
Drain current: 200A
Gate charge: 65nC
Drain-source voltage: 30V
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 1016A
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
PSMN1R5-40PS,127 NEXPERIA PSMN1R5-40PS.pdf PSMN1R5-40PS.127 THT N channel transistors
товар відсутній
PSMN1R5-40YSDX NEXPERIA PSMN1R5-40YSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 202A; Idm: 1145A
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Kind of package: reel; tape
Technology: NextPowerS3
Kind of channel: enhanced
Pulsed drain current: 1145A
Drain-source voltage: 40V
Drain current: 202A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 238W
Polarisation: unipolar
Gate charge: 99nC
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
PSMN1R6-30BL,118 NEXPERIA PSMN1R6-30BL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1268A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1268A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 2.21mΩ
Mounting: SMD
Gate charge: 212nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R6-30MLHX NEXPERIA PSMN1R6-30MLH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 116A; Idm: 656A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Pulsed drain current: 656A
Power dissipation: 106W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R7-25YLDX NEXPERIA PSMN1R7-25YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 152A; Idm: 860A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 152A
Pulsed drain current: 860A
Power dissipation: 135W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.11mΩ
Mounting: SMD
Gate charge: 46.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R7-40YLDX NEXPERIA PSMN1R7-40YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 167A; Idm: 944A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 167A
Pulsed drain current: 944A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R7-60BS,118 PSMN1R7-60BS,118 NEXPERIA PSMN1R7-60BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 795 шт:
термін постачання 7-14 дні (днів)
1+310.29 грн
5+ 203.49 грн
14+ 185.16 грн
PSMN1R8-30MLHX NEXPERIA PSMN1R8-30MLH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 110A; Idm: 624A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 110A
Pulsed drain current: 624A
Power dissipation: 106W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R8-30PL,127 PSMN1R8-30PL,127 NEXPERIA PSMN1R8-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1120A; 270W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1120A
Power dissipation: 270W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R8-40YLC,115 PSMN1R8-40YLC,115 NEXPERIA PSMN1R8-40YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 272W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 3.6mΩ
Kind of package: reel; tape
Power dissipation: 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 100A
Gate charge: 15.5nC
Drain-source voltage: 40V
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
PSMN1R8-80SSFJ NEXPERIA PSMN1R8-80SSF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 205A
Pulsed drain current: 1158A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 222nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R9-40PLQ NEXPERIA PSMN1R9-40PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 150A; Idm: 1332A; 349W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 1332A
Power dissipation: 349W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.15mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R9-40YSDX NEXPERIA PSMN1R9-40YSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 162A; Idm: 919A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Pulsed drain current: 919A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R9-80SSEJ NEXPERIA PSMN1R9-80SSE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 202A; Idm: 1142A; 340W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 202A
Pulsed drain current: 1142A
Power dissipation: 340W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 232nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-100SSFJ NEXPERIA PSMN2R0-100SSF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 189A
Pulsed drain current: 1070A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 242nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-25MLDX NEXPERIA PSMN2R0-25MLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 555A
Power dissipation: 74W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-25YLDX NEXPERIA PSMN2R0-25YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 127A
Pulsed drain current: 722A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.95mΩ
Mounting: SMD
Gate charge: 34.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-30PL,127 PSMN2R0-30PL,127 NEXPERIA PSMN2R0-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-30YL,115 NEXPERIA PSMN2R0-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-30YLDX NEXPERIA PSMN2R0-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 793A
Power dissipation: 142W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-30YLE,115 NEXPERIA PSMN2R0-30YLE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1015A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-40YLDX NEXPERIA PSMN2R0-40YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 143A
Pulsed drain current: 807A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-60PS,127 PSMN2R0-60PS,127 NEXPERIA PSMN2R0-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-60PSRQ NEXPERIA PSMN2R0-60PSR.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 60V; 120A; Idm: 1135A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 1135A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R1-40PLQ PSMN2R1-40PLQ NEXPERIA PSMN2R1-40PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1075A; 293W
Mounting: THT
Case: SOT78; TO220AB
Kind of package: tube
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Pulsed drain current: 1075A
Power dissipation: 293W
Gate charge: 168.9nC
Polarisation: unipolar
Drain current: 150A
кількість в упаковці: 1 шт
товар відсутній
PSMN2R2-25YLC,115 PSMN2R2-25YLC,115 NEXPERIA PSMN2R2-25YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 106W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 5.05mΩ
Kind of package: reel; tape
Power dissipation: 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 100A
Gate charge: 39nC
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
PSMN2R2-30YLC,115 PSMN2R2-30YLC,115 NEXPERIA PSMN2R2-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 141W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 4.6mΩ
Kind of package: reel; tape
Power dissipation: 141W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 100A
Gate charge: 55nC
Drain-source voltage: 30V
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 585 шт:
термін постачання 7-14 дні (днів)
3+102.83 грн
5+ 81.91 грн
16+ 61.44 грн
43+ 58.12 грн
500+ 57.29 грн
Мінімальне замовлення: 3
PSMN2R2-40BS,118 NEXPERIA PHGLS24325-1.pdf?t.download=true&u=5oefqw PSMN2R2-40BS.118 SMD N channel transistors
товар відсутній
PSMN2R2-40PS,127 PSMN2R2-40PS,127 NEXPERIA PSMN2R2-40PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R2-40YSDX NEXPERIA PSMN2R2-40YSD.pdf PSMN2R2-40YSDX SMD N channel transistors
товар відсутній
PSMN2R4-30MLDX NEXPERIA PSMN2R4-30MLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 70A; Idm: 580A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Pulsed drain current: 580A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
PSMN2R4-30YLDX NEXPERIA PSMN2R4-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 625A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 625A
Power dissipation: 106W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 31.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
PSMN2R5-30YL,115 NEXPERIA PSMN2R5-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 580A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 580A
Power dissipation: 88W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.47mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R5-40YLDX NEXPERIA PSMN2R5-40YLD.pdf PSMN2R5-40YLDX SMD N channel transistors
товар відсутній
PSMN2R5-60PLQ PSMN2R5-60PLQ NEXPERIA PSMN2R5-60PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 1002A; 349W
Mounting: THT
Case: SOT78; TO220AB
Kind of package: tube
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 349W
Polarisation: unipolar
Gate charge: 223nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1002A
Drain-source voltage: 60V
Drain current: 150A
кількість в упаковці: 1 шт
товар відсутній
PSMN2R6-30YLC,115 NEXPERIA PSMN2R6-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 575A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 575A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R6-40YS,115 PSMN2R6-40YS,115 NEXPERIA PSMN2R6-40YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 131W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 5.3mΩ
Kind of package: reel; tape
Power dissipation: 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 100A
Gate charge: 63nC
Drain-source voltage: 40V
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
PSMN2R6-60PSQ PSMN2R6-60PSQ NEXPERIA PSMN2R6-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W
Mounting: THT
Case: SOT78; TO220AB
Kind of package: tube
Power dissipation: 326W
Pulsed drain current: 961A
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: 150A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
On-state resistance: 5.6mΩ
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 7-14 дні (днів)
1+298.66 грн
3+ 259.54 грн
6+ 181.84 грн
15+ 171.88 грн
PSMN2R7-30BL,118 NEXPERIA PSMN2R7-30BL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 730A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R7-30PL,127 PSMN2R7-30PL,127 NEXPERIA PSMN2R7-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 730A
Power dissipation: 170W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R8-25MLC,115 NEXPERIA PSMN2R8-25MLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 536A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 536A
Power dissipation: 88W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 3.25mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R8-40PS,127 PSMN2R8-40PS,127 NEXPERIA PSMN2R8-40PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 797A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 797A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R8-40YSDX NEXPERIA PSMN2R8-40YSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 119A; Idm: 658A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Pulsed drain current: 658A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R8-80BS,118 NEXPERIA PSMN2R8-80BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 824A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.12mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R0-40YSHX PSMN1R0-40YSH.pdf
Виробник: NEXPERIA
PSMN1R0-40YSHX SMD N channel transistors
товар відсутній
PSMN1R1-25YLC,115 PSMN1R1-25YLC.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1318A; 215W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1318A
Power dissipation: 215W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 0.95mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R1-30PL,127 PSMN1R1-30PL.pdf
PSMN1R1-30PL,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 1609A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 243nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+356.78 грн
3+ 309.55 грн
5+ 226.68 грн
12+ 214.22 грн
PSMN1R1-40BS,118 PSMN1R1-40BS.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1320A; 306W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 1320A
Power dissipation: 306W
Gate charge: 136nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 40V
кількість в упаковці: 1 шт
товар відсутній
PSMN1R2-25YL,115 PSMN1R2-25YL.pdf
PSMN1R2-25YL,115
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 121W
Case: LFPAK56E; PowerSO8; SOT1023
Mounting: SMD
On-state resistance: 2.1mΩ
Kind of package: reel; tape
Power dissipation: 121W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 100A
Gate charge: 105nC
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
PSMN1R2-25YLC,115 PSMN1R2-25YLC.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1133A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1133A
Power dissipation: 179W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
PSMN1R2-25YLDX PSMN1R2-25YLD.pdf
Виробник: NEXPERIA
PSMN1R2-25YLDX SMD N channel transistors
товар відсутній
PSMN1R2-30YLC,115 PSMN1R2-30YLC.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1237A; 215W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1237A
Power dissipation: 215W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R2-30YLDX PSMN1R2-30YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 209A; Idm: 1181A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 209A
Pulsed drain current: 1181A
Power dissipation: 194W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 2.05mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
PSMN1R2-55SLHAX PSMN1R2-55SLH.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 284A; Idm: 1588A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 284A
Pulsed drain current: 1588A
Power dissipation: 375W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 395nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R3-30YL,115 PSMN1R3-30YL.pdf
PSMN1R3-30YL,115
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 121W
Case: LFPAK56E; PowerSO8; SOT1023
Mounting: SMD
On-state resistance: 2.8mΩ
Kind of package: reel; tape
Power dissipation: 121W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 100A
Gate charge: 0.1µC
Drain-source voltage: 30V
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1500 шт
товар відсутній
PSMN1R4-30YLDX PSMN1R4-30YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1019A; 166W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1019A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 54.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R4-40YLDX PSMN1R4-40YLD.pdf
Виробник: NEXPERIA
PSMN1R4-40YLDX SMD N channel transistors
товар відсутній
PSMN1R5-30BLEJ PSMN1R5-30BLE.pdf
Виробник: NEXPERIA
PSMN1R5-30BLEJ SMD N channel transistors
товар відсутній
PSMN1R5-30YL,115 PSMN1R5-30YL.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 790A; 109W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 790A
Power dissipation: 109W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R5-30YLC,115 PSMN1R5-30YLC.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; Idm: 1016A; 179W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 1.65mΩ
Kind of package: reel; tape
Power dissipation: 179W
Drain current: 200A
Gate charge: 65nC
Drain-source voltage: 30V
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 1016A
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
PSMN1R5-40PS,127 PSMN1R5-40PS.pdf
Виробник: NEXPERIA
PSMN1R5-40PS.127 THT N channel transistors
товар відсутній
PSMN1R5-40YSDX PSMN1R5-40YSD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 202A; Idm: 1145A
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Kind of package: reel; tape
Technology: NextPowerS3
Kind of channel: enhanced
Pulsed drain current: 1145A
Drain-source voltage: 40V
Drain current: 202A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 238W
Polarisation: unipolar
Gate charge: 99nC
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
PSMN1R6-30BL,118 PSMN1R6-30BL.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1268A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1268A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 2.21mΩ
Mounting: SMD
Gate charge: 212nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R6-30MLHX PSMN1R6-30MLH.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 116A; Idm: 656A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Pulsed drain current: 656A
Power dissipation: 106W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R7-25YLDX PSMN1R7-25YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 152A; Idm: 860A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 152A
Pulsed drain current: 860A
Power dissipation: 135W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.11mΩ
Mounting: SMD
Gate charge: 46.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R7-40YLDX PSMN1R7-40YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 167A; Idm: 944A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 167A
Pulsed drain current: 944A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R7-60BS,118 PSMN1R7-60BS.pdf
PSMN1R7-60BS,118
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 795 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+310.29 грн
5+ 203.49 грн
14+ 185.16 грн
PSMN1R8-30MLHX PSMN1R8-30MLH.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 110A; Idm: 624A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 110A
Pulsed drain current: 624A
Power dissipation: 106W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R8-30PL,127 PSMN1R8-30PL.pdf
PSMN1R8-30PL,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1120A; 270W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1120A
Power dissipation: 270W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R8-40YLC,115 PSMN1R8-40YLC.pdf
PSMN1R8-40YLC,115
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 272W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 3.6mΩ
Kind of package: reel; tape
Power dissipation: 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 100A
Gate charge: 15.5nC
Drain-source voltage: 40V
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
PSMN1R8-80SSFJ PSMN1R8-80SSF.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 205A
Pulsed drain current: 1158A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 222nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R9-40PLQ PSMN1R9-40PL.pdf
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 150A; Idm: 1332A; 349W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 1332A
Power dissipation: 349W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.15mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R9-40YSDX PSMN1R9-40YSD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 162A; Idm: 919A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Pulsed drain current: 919A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R9-80SSEJ PSMN1R9-80SSE.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 202A; Idm: 1142A; 340W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 202A
Pulsed drain current: 1142A
Power dissipation: 340W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 232nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-100SSFJ PSMN2R0-100SSF.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 189A
Pulsed drain current: 1070A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 242nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-25MLDX PSMN2R0-25MLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 555A
Power dissipation: 74W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-25YLDX PSMN2R0-25YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 127A
Pulsed drain current: 722A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.95mΩ
Mounting: SMD
Gate charge: 34.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-30PL,127 PSMN2R0-30PL.pdf
PSMN2R0-30PL,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-30YL,115 PSMN2R0-30YL.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-30YLDX PSMN2R0-30YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 793A
Power dissipation: 142W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-30YLE,115 PSMN2R0-30YLE.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1015A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-40YLDX PSMN2R0-40YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 143A
Pulsed drain current: 807A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-60PS,127 PSMN2R0-60PS.pdf
PSMN2R0-60PS,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-60PSRQ PSMN2R0-60PSR.pdf
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 60V; 120A; Idm: 1135A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 1135A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R1-40PLQ PSMN2R1-40PL.pdf
PSMN2R1-40PLQ
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1075A; 293W
Mounting: THT
Case: SOT78; TO220AB
Kind of package: tube
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Pulsed drain current: 1075A
Power dissipation: 293W
Gate charge: 168.9nC
Polarisation: unipolar
Drain current: 150A
кількість в упаковці: 1 шт
товар відсутній
PSMN2R2-25YLC,115 PSMN2R2-25YLC.pdf
PSMN2R2-25YLC,115
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 106W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 5.05mΩ
Kind of package: reel; tape
Power dissipation: 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 100A
Gate charge: 39nC
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
PSMN2R2-30YLC,115 PSMN2R2-30YLC.pdf
PSMN2R2-30YLC,115
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 141W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 4.6mΩ
Kind of package: reel; tape
Power dissipation: 141W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 100A
Gate charge: 55nC
Drain-source voltage: 30V
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 585 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
3+102.83 грн
5+ 81.91 грн
16+ 61.44 грн
43+ 58.12 грн
500+ 57.29 грн
Мінімальне замовлення: 3
PSMN2R2-40BS,118 PHGLS24325-1.pdf?t.download=true&u=5oefqw
Виробник: NEXPERIA
PSMN2R2-40BS.118 SMD N channel transistors
товар відсутній
PSMN2R2-40PS,127 PSMN2R2-40PS.pdf
PSMN2R2-40PS,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R2-40YSDX PSMN2R2-40YSD.pdf
Виробник: NEXPERIA
PSMN2R2-40YSDX SMD N channel transistors
товар відсутній
PSMN2R4-30MLDX PSMN2R4-30MLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 70A; Idm: 580A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Pulsed drain current: 580A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
PSMN2R4-30YLDX PSMN2R4-30YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 625A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 625A
Power dissipation: 106W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 31.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
PSMN2R5-30YL,115 PSMN2R5-30YL.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 580A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 580A
Power dissipation: 88W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.47mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R5-40YLDX PSMN2R5-40YLD.pdf
Виробник: NEXPERIA
PSMN2R5-40YLDX SMD N channel transistors
товар відсутній
PSMN2R5-60PLQ PSMN2R5-60PL.pdf
PSMN2R5-60PLQ
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 1002A; 349W
Mounting: THT
Case: SOT78; TO220AB
Kind of package: tube
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 349W
Polarisation: unipolar
Gate charge: 223nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1002A
Drain-source voltage: 60V
Drain current: 150A
кількість в упаковці: 1 шт
товар відсутній
PSMN2R6-30YLC,115 PSMN2R6-30YLC.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 575A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 575A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R6-40YS,115 PSMN2R6-40YS.pdf
PSMN2R6-40YS,115
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 131W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 5.3mΩ
Kind of package: reel; tape
Power dissipation: 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 100A
Gate charge: 63nC
Drain-source voltage: 40V
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
PSMN2R6-60PSQ PSMN2R6-60PS.pdf
PSMN2R6-60PSQ
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W
Mounting: THT
Case: SOT78; TO220AB
Kind of package: tube
Power dissipation: 326W
Pulsed drain current: 961A
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: 150A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
On-state resistance: 5.6mΩ
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+298.66 грн
3+ 259.54 грн
6+ 181.84 грн
15+ 171.88 грн
PSMN2R7-30BL,118 PSMN2R7-30BL.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 730A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R7-30PL,127 PSMN2R7-30PL.pdf
PSMN2R7-30PL,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 730A
Power dissipation: 170W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R8-25MLC,115 PSMN2R8-25MLC.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 536A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 536A
Power dissipation: 88W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 3.25mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R8-40PS,127 PSMN2R8-40PS.pdf
PSMN2R8-40PS,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 797A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 797A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R8-40YSDX PSMN2R8-40YSD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 119A; Idm: 658A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Pulsed drain current: 658A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R8-80BS,118 PSMN2R8-80BS.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 824A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.12mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
Обрати Сторінку:   [  << Попередня Сторінка ]  1 135 270 387 388 389 390 391 392 393 394 395 396 397 405 540 675 810 945 1080 1215 1350 1353  [ Наступна Сторінка >> ]