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BC547,116 BC547,116 NXP USA Inc. BC847_Rev_Feb2017.pdf Description: TRANS NPN 45V 0.1A TO-92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
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BC547B,116 BC547B,116 NXP USA Inc. BC847_Rev_Feb2017.pdf Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC547C,126 BC547C,126 NXP USA Inc. BC847_Rev_Feb2017.pdf Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC547C,116 BC547C,116 NXP USA Inc. BC847_Rev_Feb2017.pdf Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC550C,112 BC550C,112 NXP USA Inc. BC549%2C550.pdf Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC550C,116 BC550C,116 NXP USA Inc. BC549%2C550.pdf Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC556A,112 BC556A,112 NXP USA Inc. BC556%2CBC557.pdf Description: TRANS PNP 65V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
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BC556B,116 BC556B,116 NXP USA Inc. BC556%2CBC557.pdf Description: TRANS PNP 65V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
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BC557,116 BC557,116 NXP USA Inc. BC556%2CBC557.pdf Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC557B,126 BC557B,126 NXP USA Inc. BC556%2CBC557.pdf Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC557B,116 BC557B,116 NXP USA Inc. BC556%2CBC557.pdf Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC557C,126 BC557C,126 NXP USA Inc. BC556%2CBC557.pdf Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC559C,116 BC559C,116 NXP USA Inc. BC559.pdf Description: TRANS PNP 30V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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BC618,112 BC618,112 NXP USA Inc. BC618.pdf Description: TRANS NPN DARL 55V 0.5A TO-92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 55 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 155MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 200mA, 5V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 200µA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
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BC635,116 BC635,116 NXP USA Inc. BC635%2CBCP54%2CBCX54.pdf Description: TRANS NPN 45V 1A TO-92-3
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Power - Max: 830 mW
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BC635-16,126 BC635-16,126 NXP USA Inc. BC635%2CBCP54%2CBCX54.pdf Description: TRANS NPN 45V 1A TO-92-3
Power - Max: 830 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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BC636,116 BC636,116 NXP USA Inc. BC636%2CBCP51%2CBCX51.pdf Description: TRANS PNP 45V 1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 830 mW
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BC638,126 BC638,126 NXP USA Inc. BC636%2C%20BC638%2C%20BC640.pdf Description: TRANS PNP 60V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 830 mW
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BC638,116 BC638,116 NXP USA Inc. BC636%2C%20BC638%2C%20BC640.pdf Description: TRANS PNP 60V 1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 830 mW
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BC640,126 BC640,126 NXP USA Inc. BC636%2C%20BC638%2C%20BC640.pdf Description: TRANS PNP 80V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 830 mW
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BC640,116 BC640,116 NXP USA Inc. BC636%2C%20BC638%2C%20BC640.pdf Description: TRANS PNP 80V 1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 830 mW
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BC846AT,115 BC846AT,115 NXP USA Inc. BC846_Series.pdf Description: TRANS NPN 65V 0.1A SC-75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
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BC846BT,115 BC846BT,115 NXP USA Inc. BC846_Series.pdf Description: TRANS NPN 65V 0.1A SC75
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-75
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BC846T,115 BC846T,115 NXP USA Inc. BC846XW_SER.pdf Description: TRANS NPN 65V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
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BC847BT,115 BC847BT,115 NXP USA Inc. BC847_Rev_Feb2017.pdf Description: TRANS NPN 45V 0.1A SC-75
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SC-75
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
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BC847CT,115 BC847CT,115 NXP USA Inc. BC847_Rev_Feb2017.pdf Description: TRANS NPN 45V 0.1A SC-75
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-75
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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BC856AT,115 BC856AT,115 NXP USA Inc. BC856T_857T_Rev_Feb2017.pdf Description: TRANS PNP 65V 0.1A SC75
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-75
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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BC857AT,115 BC857AT,115 NXP USA Inc. BC856T_857T_Rev_Feb2017.pdf Description: TRANS PNP 45V 0.1A SC-75
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-75
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BC857BT,115 BC857BT,115 NXP USA Inc. BC856T_857T_Rev_Feb2017.pdf Description: TRANS PNP 45V 0.1A SC75
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-75
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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BC875,126 BC875,126 NXP USA Inc. BC875%2CBC879.pdf Description: TRANS NPN DARL 45V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 830 mW
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BF1100,215 BF1100,215 NXP USA Inc. BF1100%28R%29.pdf Description: RF MOSFET 9V SOT143B
Current - Test: 10 mA
Voltage - Test: 9 V
Voltage - Rated: 14 V
Supplier Device Package: SOT-143B
Noise Figure: 2dB
Technology: MOSFET (Metal Oxide)
Configuration: N-Channel Dual Gate
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 30mA
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
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BF1100R,215 BF1100R,215 NXP USA Inc. BF1100%28R%29.pdf Description: RF MOSFET 9V SOT143R
Current - Test: 10 mA
Voltage - Test: 9 V
Voltage - Rated: 14 V
Supplier Device Package: SOT-143R
Noise Figure: 2dB
Technology: MOSFET (Metal Oxide)
Configuration: N-Channel Dual Gate
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 30mA
Package / Case: SOT-143R
Packaging: Tape & Reel (TR)
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2N5401,412 2N5401,412 NXP USA Inc. DS_568_2N5401.pdf Description: TRANS PNP 150V 0.3A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 630 mW
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2N5551,412 2N5551,412 NXP USA Inc. 2N5550_51_Series_Rev_Oct2004.pdf Description: TRANS NPN 160V 0.3A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 630 mW
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BC327,412 BC327,412 NXP USA Inc. BC807(W)_BC327_Rev_Feb2017.pdf Description: TRANS PNP 45V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
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BC337,112 BC337,112 NXP USA Inc. BC817_BC817W_BC337.pdf Description: TRANS NPN 45V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
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BC368,112 BC368,112 NXP USA Inc. DS_568_BC368.pdf Description: TRANS NPN 20V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 830 mW
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BC369,112 BC369,112 NXP USA Inc. DS_568_BC369.pdf Description: TRANS PNP 20V 1A TO-92-3
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 830 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
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BC549C,112 BC549C,112 NXP USA Inc. BC549%2C550.pdf Description: TRANS NPN 30V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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BC557,112 BC557,112 NXP USA Inc. BC556%2CBC557.pdf Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC635,112 BC635,112 NXP USA Inc. BC635%2CBCP54%2CBCX54.pdf Description: TRANS NPN 45V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 830 mW
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BC638,112 BC638,112 NXP USA Inc. BC636%2C%20BC638%2C%20BC640.pdf Description: TRANS PNP 60V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 830 mW
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BC640,112 BC640,112 NXP USA Inc. BC636%2C%20BC638%2C%20BC640.pdf Description: TRANS PNP 80V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 830 mW
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MPC745BVT350LE NXP USA Inc. MPC755EC.pdf Description: IC MPU MPC7XX 350MHZ 255FCPBGA
Packaging: Tray
Package / Case: 255-BBGA, FCBGA
Mounting Type: Surface Mount
Speed: 350MHz
Operating Temperature: 0°C ~ 105°C (TA)
Core Processor: PowerPC
Voltage - I/O: 2.5V, 3.3V
Supplier Device Package: 255-FCPBGA (21x21)
Number of Cores/Bus Width: 1 Core, 32-Bit
Graphics Acceleration: No
Part Status: Obsolete
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OM10095 NXP USA Inc. Description: LPC2368 EVAL BRD
Utilized IC / Part: LPC2368
Board Type: Evaluation Platform
Core Processor: ARM7
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Part Status: Obsolete
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 Мінімальне замовлення: 2 шт
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MC68711E20CFNE4 MC68711E20CFNE4 NXP USA Inc. www.nxp.com Description: IC MCU 8BIT 20KB OTP 52PLCC
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BGW200EG/01,515 NXP USA Inc. BGW200EG.pdf Description: IC RF TXRX+MCU WIFI 68LFLGA
Packaging: Tape & Reel (TR)
Package / Case: 68-LFLGA Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kb ROM, 1280kb SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.7V ~ 3V
Power - Output: 17.6dBm
Protocol: 802.11b
Current - Receiving: 93.7mA ~ 111.5mA
Data Rate (Max): 11Mbps
Current - Transmitting: 16mA ~ 94.2mA
Supplier Device Package: 68-HLLGAR (10x15)
GPIO: 11
Modulation: CCK, DSSS, QPSK
RF Family/Standard: WiFi
Serial Interfaces: JTAG, SDIO, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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USBSPYDER08 USBSPYDER08 NXP USA Inc. USBSPYDER08FS.pdf Description: PROGRAMMER USB DEBUG KA QD QG
Contents: Board(s)
Type: Debugger, Programmer (In-Circuit/In-System)
For Use With/Related Products: MC9RS08KA, MC9S08QD, MC9S08QG
Packaging: Bulk
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M523XEVBE NXP USA Inc. Description: MCF523X EVAL BRD
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PCF8578H/1,157 PCF8578H/1,157 NXP USA Inc. PCF8578.pdf Description: IC DRVR DOT MATRIX 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: I2C
Configuration: Dot Matrix
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: 64-LQFP (10x10)
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MC9RS08KA1CSCR MC9RS08KA1CSCR NXP USA Inc. MC9RS08KA2.pdf Description: IC MCU 8BIT 1KB FLASH 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 1KB (1K x 8)
RAM Size: 63 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: RS08
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Peripherals: LVD, POR, WDT
Supplier Device Package: 8-SOIC
Number of I/O: 4
DigiKey Programmable: Verified
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 Мінімальне замовлення: 2500 шт
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M5282LITEE M5282LITEE NXP USA Inc. Description: MCF5280/MCF5281/MCF5282 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MPU
Contents: Board(s)
Core Processor: Coldfire V2
Board Type: Evaluation Platform
Utilized IC / Part: MCF5280, MCF5281, MCF5282
Part Status: Obsolete
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MCHC11F1CFNE2 MCHC11F1CFNE2 NXP USA Inc. MC68HC11F1.pdf Description: IC MCU 8BIT ROMLESS 68PLCC
товару немає в наявності
 Мінімальне замовлення: 18 шт
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MC9RS08KA1CSCR MC9RS08KA1CSCR NXP USA Inc. MC9RS08KA2.pdf Description: IC MCU 8BIT 1KB FLASH 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 1KB (1K x 8)
RAM Size: 63 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: RS08
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Peripherals: LVD, POR, WDT
Supplier Device Package: 8-SOIC
Number of I/O: 4
DigiKey Programmable: Verified
на замовлення 2495 шт:
термін постачання 21-31 дні (днів)
3+136.38 грн
10+96.63 грн
25+87.99 грн
100+73.57 грн
250+69.30 грн
500+66.71 грн
1000+63.53 грн
Мінімальне замовлення: 3 шт
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74ALVCH16623DL,118 74ALVCH16623DL,118 NXP USA Inc. 74ALVCH16623.pdf Description: IC TXRX NON-INVERT 3.6V 48TSSOP
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74LVTH16245BDGG:51 74LVTH16245BDGG:51 NXP USA Inc. 74LVT(H)16245B_Rev_Feb2017.pdf Description: IC TXRX NON-INVERT 3.6V 48TSSOP
Supplier Device Package: 48-TSSOP
Current - Output High, Low: 32mA, 64mA
Number of Bits per Element: 8
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Tape & Reel (TR)
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74LVTH574D,112 74LVTH574D,112 NXP USA Inc. 74LVT%28H%29574.pdf Description: IC FF D-TYPE SNGL 8BIT 20SO
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Number of Bits per Element: 8
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 5.9ns @ 3.3V, 50pF
Supplier Device Package: 20-SO
Input Capacitance: 4 pF
Clock Frequency: 150 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 64mA
Current - Quiescent (Iq): 190 µA
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 Мінімальне замовлення: 1520 шт
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74LVTH574D,118 74LVTH574D,118 NXP USA Inc. 74LVT%28H%29574.pdf Description: IC FF D-TYPE SNGL 8BIT 20SO
Number of Bits per Element: 8
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 5.9ns @ 3.3V, 50pF
Supplier Device Package: 20-SO
Input Capacitance: 4 pF
Clock Frequency: 150 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 64mA
Current - Quiescent (Iq): 190 µA
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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74LVTH574DB,112 74LVTH574DB,112 NXP USA Inc. 74LVT%28H%29574.pdf Description: IC FF D-TYPE SINGLE 8BIT 20SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 190 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-SSOP
Max Propagation Delay @ V, Max CL: 5.9ns @ 3.3V, 50pF
Part Status: Obsolete
Number of Bits per Element: 8
товару немає в наявності
 Мінімальне замовлення: 924 шт
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74LVTH574PW,112 74LVTH574PW,112 NXP USA Inc. 74LVT%28H%29574.pdf Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 64mA
Current - Quiescent (Iq): 190 µA
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Number of Bits per Element: 8
Max Propagation Delay @ V, Max CL: 5.9ns @ 3.3V, 50pF
Supplier Device Package: 20-TSSOP
Input Capacitance: 4 pF
Clock Frequency: 150 MHz
товару немає в наявності
 Мінімальне замовлення: 1875 шт
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BC547,116 BC847_Rev_Feb2017.pdf
BC547,116
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 0.1A TO-92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
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BC547B,116 BC847_Rev_Feb2017.pdf
BC547B,116
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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В кошику  од. на суму  грн.
BC547C,126 BC847_Rev_Feb2017.pdf
BC547C,126
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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В кошику  од. на суму  грн.
BC547C,116 BC847_Rev_Feb2017.pdf
BC547C,116
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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В кошику  од. на суму  грн.
BC550C,112 BC549%2C550.pdf
BC550C,112
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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В кошику  од. на суму  грн.
BC550C,116 BC549%2C550.pdf
BC550C,116
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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В кошику  од. на суму  грн.
BC556A,112 BC556%2CBC557.pdf
BC556A,112
Виробник: NXP USA Inc.
Description: TRANS PNP 65V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
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В кошику  од. на суму  грн.
BC556B,116 BC556%2CBC557.pdf
BC556B,116
Виробник: NXP USA Inc.
Description: TRANS PNP 65V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
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В кошику  од. на суму  грн.
BC557,116 BC556%2CBC557.pdf
BC557,116
Виробник: NXP USA Inc.
Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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В кошику  од. на суму  грн.
BC557B,126 BC556%2CBC557.pdf
BC557B,126
Виробник: NXP USA Inc.
Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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В кошику  од. на суму  грн.
BC557B,116 BC556%2CBC557.pdf
BC557B,116
Виробник: NXP USA Inc.
Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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В кошику  од. на суму  грн.
BC557C,126 BC556%2CBC557.pdf
BC557C,126
Виробник: NXP USA Inc.
Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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В кошику  од. на суму  грн.
BC559C,116 BC559.pdf
BC559C,116
Виробник: NXP USA Inc.
Description: TRANS PNP 30V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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В кошику  од. на суму  грн.
BC618,112 BC618.pdf
BC618,112
Виробник: NXP USA Inc.
Description: TRANS NPN DARL 55V 0.5A TO-92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 55 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 155MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 200mA, 5V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 200µA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
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BC635,116 BC635%2CBCP54%2CBCX54.pdf
BC635,116
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 1A TO-92-3
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Power - Max: 830 mW
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BC635-16,126 BC635%2CBCP54%2CBCX54.pdf
BC635-16,126
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 1A TO-92-3
Power - Max: 830 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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BC636,116 BC636%2CBCP51%2CBCX51.pdf
BC636,116
Виробник: NXP USA Inc.
Description: TRANS PNP 45V 1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 830 mW
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В кошику  од. на суму  грн.
BC638,126 BC636%2C%20BC638%2C%20BC640.pdf
BC638,126
Виробник: NXP USA Inc.
Description: TRANS PNP 60V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 830 mW
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В кошику  од. на суму  грн.
BC638,116 BC636%2C%20BC638%2C%20BC640.pdf
BC638,116
Виробник: NXP USA Inc.
Description: TRANS PNP 60V 1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 830 mW
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BC640,126 BC636%2C%20BC638%2C%20BC640.pdf
BC640,126
Виробник: NXP USA Inc.
Description: TRANS PNP 80V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 830 mW
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BC640,116 BC636%2C%20BC638%2C%20BC640.pdf
BC640,116
Виробник: NXP USA Inc.
Description: TRANS PNP 80V 1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 830 mW
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BC846AT,115 BC846_Series.pdf
BC846AT,115
Виробник: NXP USA Inc.
Description: TRANS NPN 65V 0.1A SC-75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
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BC846BT,115 BC846_Series.pdf
BC846BT,115
Виробник: NXP USA Inc.
Description: TRANS NPN 65V 0.1A SC75
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-75
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BC846T,115 BC846XW_SER.pdf
BC846T,115
Виробник: NXP USA Inc.
Description: TRANS NPN 65V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
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В кошику  од. на суму  грн.
BC847BT,115 BC847_Rev_Feb2017.pdf
BC847BT,115
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 0.1A SC-75
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SC-75
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
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BC847CT,115 BC847_Rev_Feb2017.pdf
BC847CT,115
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 0.1A SC-75
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-75
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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BC856AT,115 BC856T_857T_Rev_Feb2017.pdf
BC856AT,115
Виробник: NXP USA Inc.
Description: TRANS PNP 65V 0.1A SC75
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-75
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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BC857AT,115 BC856T_857T_Rev_Feb2017.pdf
BC857AT,115
Виробник: NXP USA Inc.
Description: TRANS PNP 45V 0.1A SC-75
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-75
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BC857BT,115 BC856T_857T_Rev_Feb2017.pdf
BC857BT,115
Виробник: NXP USA Inc.
Description: TRANS PNP 45V 0.1A SC75
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-75
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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BC875,126 BC875%2CBC879.pdf
BC875,126
Виробник: NXP USA Inc.
Description: TRANS NPN DARL 45V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 830 mW
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BF1100,215 BF1100%28R%29.pdf
BF1100,215
Виробник: NXP USA Inc.
Description: RF MOSFET 9V SOT143B
Current - Test: 10 mA
Voltage - Test: 9 V
Voltage - Rated: 14 V
Supplier Device Package: SOT-143B
Noise Figure: 2dB
Technology: MOSFET (Metal Oxide)
Configuration: N-Channel Dual Gate
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 30mA
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
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BF1100R,215 BF1100%28R%29.pdf
BF1100R,215
Виробник: NXP USA Inc.
Description: RF MOSFET 9V SOT143R
Current - Test: 10 mA
Voltage - Test: 9 V
Voltage - Rated: 14 V
Supplier Device Package: SOT-143R
Noise Figure: 2dB
Technology: MOSFET (Metal Oxide)
Configuration: N-Channel Dual Gate
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 30mA
Package / Case: SOT-143R
Packaging: Tape & Reel (TR)
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2N5401,412 DS_568_2N5401.pdf
2N5401,412
Виробник: NXP USA Inc.
Description: TRANS PNP 150V 0.3A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 630 mW
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2N5551,412 2N5550_51_Series_Rev_Oct2004.pdf
2N5551,412
Виробник: NXP USA Inc.
Description: TRANS NPN 160V 0.3A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 630 mW
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BC327,412 BC807(W)_BC327_Rev_Feb2017.pdf
BC327,412
Виробник: NXP USA Inc.
Description: TRANS PNP 45V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
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BC337,112 BC817_BC817W_BC337.pdf
BC337,112
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
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BC368,112 DS_568_BC368.pdf
BC368,112
Виробник: NXP USA Inc.
Description: TRANS NPN 20V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 830 mW
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BC369,112 DS_568_BC369.pdf
BC369,112
Виробник: NXP USA Inc.
Description: TRANS PNP 20V 1A TO-92-3
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 830 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
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BC549C,112 BC549%2C550.pdf
BC549C,112
Виробник: NXP USA Inc.
Description: TRANS NPN 30V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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BC557,112 BC556%2CBC557.pdf
BC557,112
Виробник: NXP USA Inc.
Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC635,112 BC635%2CBCP54%2CBCX54.pdf
BC635,112
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 830 mW
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BC638,112 BC636%2C%20BC638%2C%20BC640.pdf
BC638,112
Виробник: NXP USA Inc.
Description: TRANS PNP 60V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 830 mW
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BC640,112 BC636%2C%20BC638%2C%20BC640.pdf
BC640,112
Виробник: NXP USA Inc.
Description: TRANS PNP 80V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 830 mW
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MPC745BVT350LE MPC755EC.pdf
Виробник: NXP USA Inc.
Description: IC MPU MPC7XX 350MHZ 255FCPBGA
Packaging: Tray
Package / Case: 255-BBGA, FCBGA
Mounting Type: Surface Mount
Speed: 350MHz
Operating Temperature: 0°C ~ 105°C (TA)
Core Processor: PowerPC
Voltage - I/O: 2.5V, 3.3V
Supplier Device Package: 255-FCPBGA (21x21)
Number of Cores/Bus Width: 1 Core, 32-Bit
Graphics Acceleration: No
Part Status: Obsolete
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OM10095
Виробник: NXP USA Inc.
Description: LPC2368 EVAL BRD
Utilized IC / Part: LPC2368
Board Type: Evaluation Platform
Core Processor: ARM7
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Part Status: Obsolete
товару немає в наявності
Мінімальне замовлення: 2 шт
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MC68711E20CFNE4 www.nxp.com
MC68711E20CFNE4
Виробник: NXP USA Inc.
Description: IC MCU 8BIT 20KB OTP 52PLCC
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BGW200EG/01,515 BGW200EG.pdf
Виробник: NXP USA Inc.
Description: IC RF TXRX+MCU WIFI 68LFLGA
Packaging: Tape & Reel (TR)
Package / Case: 68-LFLGA Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kb ROM, 1280kb SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.7V ~ 3V
Power - Output: 17.6dBm
Protocol: 802.11b
Current - Receiving: 93.7mA ~ 111.5mA
Data Rate (Max): 11Mbps
Current - Transmitting: 16mA ~ 94.2mA
Supplier Device Package: 68-HLLGAR (10x15)
GPIO: 11
Modulation: CCK, DSSS, QPSK
RF Family/Standard: WiFi
Serial Interfaces: JTAG, SDIO, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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USBSPYDER08 USBSPYDER08FS.pdf
USBSPYDER08
Виробник: NXP USA Inc.
Description: PROGRAMMER USB DEBUG KA QD QG
Contents: Board(s)
Type: Debugger, Programmer (In-Circuit/In-System)
For Use With/Related Products: MC9RS08KA, MC9S08QD, MC9S08QG
Packaging: Bulk
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M523XEVBE
Виробник: NXP USA Inc.
Description: MCF523X EVAL BRD
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PCF8578H/1,157 PCF8578.pdf
PCF8578H/1,157
Виробник: NXP USA Inc.
Description: IC DRVR DOT MATRIX 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: I2C
Configuration: Dot Matrix
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: 64-LQFP (10x10)
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MC9RS08KA1CSCR MC9RS08KA2.pdf
MC9RS08KA1CSCR
Виробник: NXP USA Inc.
Description: IC MCU 8BIT 1KB FLASH 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 1KB (1K x 8)
RAM Size: 63 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: RS08
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Peripherals: LVD, POR, WDT
Supplier Device Package: 8-SOIC
Number of I/O: 4
DigiKey Programmable: Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
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M5282LITEE
M5282LITEE
Виробник: NXP USA Inc.
Description: MCF5280/MCF5281/MCF5282 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MPU
Contents: Board(s)
Core Processor: Coldfire V2
Board Type: Evaluation Platform
Utilized IC / Part: MCF5280, MCF5281, MCF5282
Part Status: Obsolete
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MCHC11F1CFNE2 MC68HC11F1.pdf
MCHC11F1CFNE2
Виробник: NXP USA Inc.
Description: IC MCU 8BIT ROMLESS 68PLCC
товару немає в наявності
Мінімальне замовлення: 18 шт
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MC9RS08KA1CSCR MC9RS08KA2.pdf
MC9RS08KA1CSCR
Виробник: NXP USA Inc.
Description: IC MCU 8BIT 1KB FLASH 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 1KB (1K x 8)
RAM Size: 63 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: RS08
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Peripherals: LVD, POR, WDT
Supplier Device Package: 8-SOIC
Number of I/O: 4
DigiKey Programmable: Verified
на замовлення 2495 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+136.38 грн
10+96.63 грн
25+87.99 грн
100+73.57 грн
250+69.30 грн
500+66.71 грн
1000+63.53 грн
Мінімальне замовлення: 3 шт
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74ALVCH16623DL,118 74ALVCH16623.pdf
74ALVCH16623DL,118
Виробник: NXP USA Inc.
Description: IC TXRX NON-INVERT 3.6V 48TSSOP
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74LVTH16245BDGG:51 74LVT(H)16245B_Rev_Feb2017.pdf
74LVTH16245BDGG:51
Виробник: NXP USA Inc.
Description: IC TXRX NON-INVERT 3.6V 48TSSOP
Supplier Device Package: 48-TSSOP
Current - Output High, Low: 32mA, 64mA
Number of Bits per Element: 8
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Tape & Reel (TR)
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74LVTH574D,112 74LVT%28H%29574.pdf
74LVTH574D,112
Виробник: NXP USA Inc.
Description: IC FF D-TYPE SNGL 8BIT 20SO
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Number of Bits per Element: 8
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 5.9ns @ 3.3V, 50pF
Supplier Device Package: 20-SO
Input Capacitance: 4 pF
Clock Frequency: 150 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 64mA
Current - Quiescent (Iq): 190 µA
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Мінімальне замовлення: 1520 шт
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74LVTH574D,118 74LVT%28H%29574.pdf
74LVTH574D,118
Виробник: NXP USA Inc.
Description: IC FF D-TYPE SNGL 8BIT 20SO
Number of Bits per Element: 8
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 5.9ns @ 3.3V, 50pF
Supplier Device Package: 20-SO
Input Capacitance: 4 pF
Clock Frequency: 150 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 64mA
Current - Quiescent (Iq): 190 µA
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
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74LVTH574DB,112 74LVT%28H%29574.pdf
74LVTH574DB,112
Виробник: NXP USA Inc.
Description: IC FF D-TYPE SINGLE 8BIT 20SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 190 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-SSOP
Max Propagation Delay @ V, Max CL: 5.9ns @ 3.3V, 50pF
Part Status: Obsolete
Number of Bits per Element: 8
товару немає в наявності
Мінімальне замовлення: 924 шт
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74LVTH574PW,112 74LVT%28H%29574.pdf
74LVTH574PW,112
Виробник: NXP USA Inc.
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 64mA
Current - Quiescent (Iq): 190 µA
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Number of Bits per Element: 8
Max Propagation Delay @ V, Max CL: 5.9ns @ 3.3V, 50pF
Supplier Device Package: 20-TSSOP
Input Capacitance: 4 pF
Clock Frequency: 150 MHz
товару немає в наявності
Мінімальне замовлення: 1875 шт
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