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PMBF4392,215 PMBF4392,215 NXP USA Inc. PMBF4391-4393.pdf Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 250 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
товар відсутній
PMBF4393,215 PMBF4393,215 NXP USA Inc. PMBF4391-4393.pdf Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 250 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
товар відсутній
PMBFJ111,215 PMBFJ111,215 NXP USA Inc. PMBFJ111_112_113.pdf Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 300 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
товар відсутній
PMBFJ112,215 PMBFJ112,215 NXP USA Inc. PMBFJ111_112_113.pdf Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 300 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
товар відсутній
PMBFJ113,215 PMBFJ113,215 NXP USA Inc. PMBFJ111_112_113.pdf Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 300 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
товар відсутній
PMBFJ175,215 PMBFJ175,215 NXP USA Inc. PMBFJ174_175_176_177_CNV.pdf Description: JFET P-CH 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 300 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
товар відсутній
PMBFJ308,215 PMBFJ308,215 NXP USA Inc. PMBFJ308_309_310.pdf Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
товар відсутній
PMBFJ309,215 PMBFJ309,215 NXP USA Inc. PMBFJ308_309_310.pdf Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
товар відсутній
PMBT5401,235 PMBT5401,235 NXP USA Inc. PMBT5401_4.pdf Description: TRANS PNP 150V 0.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 250 mW
товар відсутній
PMBT5401,215 PMBT5401,215 NXP USA Inc. PMBT5401_4.pdf Description: TRANS PNP 150V 0.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 250 mW
товар відсутній
PMEM4010PD,115 PMEM4010PD,115 NXP USA Inc. PMEM4010PD.pdf Description: TRANS PNP 40V 1A 6TSOP
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PMEM4020AND,115 PMEM4020AND,115 NXP USA Inc. PMEM4020AND.pdf Description: TRANS NPN 40V 0.95A SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: NPN + Diode (Isolated)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SC-74
Current - Collector (Ic) (Max): 950 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
товар відсутній
PMEM4020APD,115 PMEM4020APD,115 NXP USA Inc. PMEM4020APD.pdf Description: TRANS PNP 40V 0.75A 6TSOP
товар відсутній
PMEM4020ND,115 PMEM4020ND,115 NXP USA Inc. PMEM4020ND.pdf Description: TRANS NPN 40V 0.95A 6TSOP
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PMEM4020PD,115 PMEM4020PD,115 NXP USA Inc. PMEM4020PD.pdf Description: TRANS PNP 40V 0.75A 6TSOP
товар відсутній
PMG370XN,115 PMG370XN,115 NXP USA Inc. Description: MOSFET N-CH 30V 0.96A 6TSSOP
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PMN23UN,135 PMN23UN,135 NXP USA Inc. PMN23UN.pdf Description: MOSFET N-CH 20V 6.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Supplier Device Package: SC-74
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
товар відсутній
PMN27UN,135 PMN27UN,135 NXP USA Inc. PMN27UN.pdf Description: MOSFET N-CH 20V 5.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Supplier Device Package: SC-74
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
товар відсутній
PMN28UN,165 PMN28UN,165 NXP USA Inc. PMN28UN.pdf Description: MOSFET N-CH 12V 5.7A 6TSOP
товар відсутній
PMN34LN,135 PMN34LN,135 NXP USA Inc. PMN34LN.pdf Description: MOSFET N-CH 20V 5.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-74
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 20 V
товар відсутній
PMN34UN,135 PMN34UN,135 NXP USA Inc. PMN34UN.pdf Description: MOSFET N-CH 30V 4.9A 6TSOP
товар відсутній
PMN40LN,135 PMN40LN,135 NXP USA Inc. PMN40LN.pdf Description: MOSFET N-CH 30V 5.4A 6TSOP
товар відсутній
PMN45EN,165 PMN45EN,165 NXP USA Inc. PMN45EN.pdf Description: MOSFET N-CH 30V 5.2A 6TSOP
товар відсутній
PMR280UN,115 PMR280UN,115 NXP USA Inc. PMR280UN.pdf Description: MOSFET N-CH 20V 980MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 200mA, 4.5V
Power Dissipation (Max): 530mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-75
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 20 V
товар відсутній
PMR290XN,115 PMR290XN,115 NXP USA Inc. PMR290XN.pdf Description: MOSFET N-CH 20V 970MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 970mA (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Power Dissipation (Max): 530mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 20 V
товар відсутній
PMR400UN,115 PMR400UN,115 NXP USA Inc. PMR400UN.pdf Description: MOSFET N-CH 30V 800MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 4.5V
Power Dissipation (Max): 530mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
товар відсутній
PMR780SN,115 PMR780SN,115 NXP USA Inc. PMR780SN.pdf Description: MOSFET N-CH 60V 550MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V
Power Dissipation (Max): 530mW (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
товар відсутній
PMST5401,135 PMST5401,135 NXP USA Inc. PMST5401_3.pdf Description: TRANS PNP 150V 0.3A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SC-70
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 200 mW
товар відсутній
PMST5401,115 PMST5401,115 NXP USA Inc. PMST5401_3.pdf Description: TRANS PNP 150V 0.3A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SC-70
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 200 mW
товар відсутній
PMV117EN,215 PMV117EN,215 NXP USA Inc. PMV117EN.pdf Description: MOSFET N-CH 30V 2.5A SOT23
товар відсутній
PMV56XN,215 PMV56XN,215 NXP USA Inc. Description: MOSFET N-CH 20V 3.76A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.76A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.92W (Tc)
Vgs(th) (Max) @ Id: 650mV @ 1mA (Min)
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
товар відсутній
PN2222A,126 PN2222A,126 NXP USA Inc. DS_568_PN2222A.pdf Description: TRANS NPN 40V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
товар відсутній
PN2907A,126 PN2907A,126 NXP USA Inc. DS_568_PN2907A.pdf Description: TRANS PNP 60V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товар відсутній
PRLL5817,135 PRLL5817,135 NXP USA Inc. PRLL5817-5819.pdf Description: DIODE SCHOTTKY 20V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: SOD-87
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
PSMN004-36B,118 PSMN004-36B,118 NXP USA Inc. PSMN004_36P_36B.pdf Description: MOSFET N-CH 36V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 36 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 20 V
товар відсутній
PSMN004-55W,127 PSMN004-55W,127 NXP USA Inc. PSMN004-55W_3.pdf Description: MOSFET N-CH 55V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
товар відсутній
PSMN005-25D,118 PSMN005-25D,118 NXP USA Inc. PSMN005-25D_HG.pdf Description: MOSFET N-CH 25V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 20 V
товар відсутній
PSMN005-55B,118 PSMN005-55B,118 NXP USA Inc. PSMN005-55B_P_HG.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
товар відсутній
PSMN005-55P,127 PSMN005-55P,127 NXP USA Inc. PSMN005-55B_P_HG.pdf Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
товар відсутній
PSMN009-100W,127 PSMN009-100W,127 NXP USA Inc. PSMN009-100W_2.pdf Description: MOSFET N-CH 100V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
товар відсутній
PSMN010-55D,118 PSMN010-55D,118 NXP USA Inc. Description: MOSFET N-CH 55V 75A DPAK
товар відсутній
PSMN020-150W,127 PSMN020-150W,127 NXP USA Inc. PSMN020-150W_2.pdf Description: MOSFET N-CH 150V 73A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9537 pF @ 25 V
товар відсутній
PSMN040-200W,127 PSMN040-200W,127 NXP USA Inc. PSMN040-200W_2.pdf Description: MOSFET N-CH 200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 25 V
товар відсутній
PSSI3120CA,235 PSSI3120CA,235 NXP USA Inc. PSSI3120CA.pdf Description: FILTER RC ESD SMD
Packaging: Tape & Reel (TR)
Voltage - Rated: 5V
Package / Case: TO-236-3, SC-59, SOT-23-3
Size / Dimension: 0.114" L x 0.052" W (2.90mm x 1.30mm)
Mounting Type: Surface Mount
Type: Band Stop
Values: R = 51Ohms, 55Ohms, C = 180pF
Height: 0.043" (1.09mm)
Filter Order: 3rd
Applications: Data Lines for Mobile Devices
Technology: RC
Resistance - Channel (Ohms): 51, 55
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 1
Current: 10 mA
товар відсутній
PTN3310D,118 PTN3310D,118 NXP USA Inc. PTN3310_PTN3311.pdf Description: IC TRANSLTR UNIDIRECTIONAL 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 800Mbps
Supplier Device Package: 8-SO
Channel Type: Unidirectional
Output Signal: PECL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: LVDS
Part Status: Obsolete
Number of Circuits: 1
товар відсутній
PTN3331D,112 PTN3331D,112 NXP USA Inc. PTN3331.pdf Description: IC DRIVER 4/0 16SO
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 4/0
Protocol: LVDS
Supplier Device Package: 16-SO
товар відсутній
PTN3332DH,112 PTN3332DH,112 NXP USA Inc. PTN3332.pdf Description: IC DRIVER 4/0 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 4/0
Protocol: LVDS
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
товар відсутній
PTN3332D,118 PTN3332D,118 NXP USA Inc. PTN3332.pdf Description: IC DRIVER 4/0 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 4/0
Protocol: LVDS
Supplier Device Package: 16-SO
Part Status: Obsolete
товар відсутній
PTN3341DH,112 PTN3341DH,112 NXP USA Inc. PTN3341.pdf Description: IC DRIVER 4/0 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 4/0
Protocol: LVDS
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
товар відсутній
PTN3341DH,118 PTN3341DH,118 NXP USA Inc. PTN3341.pdf Description: IC DRIVER 4/0 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 4/0
Protocol: LVDS
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
товар відсутній
PTN3342DH,112 PTN3342DH,112 NXP USA Inc. PTN3342.pdf Description: IC RECEIVER 0/4 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/4
Protocol: LVDS
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
товар відсутній
PTN3342DH,118 PTN3342DH,118 NXP USA Inc. PTN3342.pdf Description: IC RECEIVER 0/4 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/4
Protocol: LVDS
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
товар відсутній
PZM10NB1,115 PZM10NB1,115 NXP USA Inc. Description: DIODE ZENER 10V 300MW SMT3
товар відсутній
PZM10NB2,115 PZM10NB2,115 NXP USA Inc. Description: DIODE ZENER 10V 300MW SMT3
товар відсутній
PZM10NB2A,115 PZM10NB2A,115 NXP USA Inc. Description: DIODE ZENER 10V 220MW SMT3
товар відсутній
PZM10NB3,115 PZM10NB3,115 NXP USA Inc. Description: DIODE ZENER 10V 300MW SMT3
товар відсутній
PZM12NB,115 PZM12NB,115 NXP USA Inc. Description: DIODE ZENER 12V 300MW SMT3
товар відсутній
PZM12NB2,115 PZM12NB2,115 NXP USA Inc. Description: DIODE ZENER 12V 300MW SMT3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SMT3; MPAK
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
товар відсутній
PZM12NB2A,115 PZM12NB2A,115 NXP USA Inc. Description: DIODE ZENER 12V 220MW SMT3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SMT3; MPAK
Power - Max: 220 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
товар відсутній
PZM12NB3,115 PZM12NB3,115 NXP USA Inc. Description: DIODE ZENER 12V 300MW SMT3
товар відсутній
PMBF4392,215 PMBF4391-4393.pdf
PMBF4392,215
Виробник: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 250 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
товар відсутній
PMBF4393,215 PMBF4391-4393.pdf
PMBF4393,215
Виробник: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 250 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
товар відсутній
PMBFJ111,215 PMBFJ111_112_113.pdf
PMBFJ111,215
Виробник: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 300 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
товар відсутній
PMBFJ112,215 PMBFJ111_112_113.pdf
PMBFJ112,215
Виробник: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 300 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
товар відсутній
PMBFJ113,215 PMBFJ111_112_113.pdf
PMBFJ113,215
Виробник: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 300 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
товар відсутній
PMBFJ175,215 PMBFJ174_175_176_177_CNV.pdf
PMBFJ175,215
Виробник: NXP USA Inc.
Description: JFET P-CH 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 300 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
товар відсутній
PMBFJ308,215 PMBFJ308_309_310.pdf
PMBFJ308,215
Виробник: NXP USA Inc.
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
товар відсутній
PMBFJ309,215 PMBFJ308_309_310.pdf
PMBFJ309,215
Виробник: NXP USA Inc.
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
товар відсутній
PMBT5401,235 PMBT5401_4.pdf
PMBT5401,235
Виробник: NXP USA Inc.
Description: TRANS PNP 150V 0.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 250 mW
товар відсутній
PMBT5401,215 PMBT5401_4.pdf
PMBT5401,215
Виробник: NXP USA Inc.
Description: TRANS PNP 150V 0.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 250 mW
товар відсутній
PMEM4010PD,115 PMEM4010PD.pdf
PMEM4010PD,115
Виробник: NXP USA Inc.
Description: TRANS PNP 40V 1A 6TSOP
товар відсутній
PMEM4020AND,115 PMEM4020AND.pdf
PMEM4020AND,115
Виробник: NXP USA Inc.
Description: TRANS NPN 40V 0.95A SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: NPN + Diode (Isolated)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SC-74
Current - Collector (Ic) (Max): 950 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
товар відсутній
PMEM4020APD,115 PMEM4020APD.pdf
PMEM4020APD,115
Виробник: NXP USA Inc.
Description: TRANS PNP 40V 0.75A 6TSOP
товар відсутній
PMEM4020ND,115 PMEM4020ND.pdf
PMEM4020ND,115
Виробник: NXP USA Inc.
Description: TRANS NPN 40V 0.95A 6TSOP
товар відсутній
PMEM4020PD,115 PMEM4020PD.pdf
PMEM4020PD,115
Виробник: NXP USA Inc.
Description: TRANS PNP 40V 0.75A 6TSOP
товар відсутній
PMG370XN,115
PMG370XN,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 0.96A 6TSSOP
товар відсутній
PMN23UN,135 PMN23UN.pdf
PMN23UN,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 6.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Supplier Device Package: SC-74
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
товар відсутній
PMN27UN,135 PMN27UN.pdf
PMN27UN,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 5.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Supplier Device Package: SC-74
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
товар відсутній
PMN28UN,165 PMN28UN.pdf
PMN28UN,165
Виробник: NXP USA Inc.
Description: MOSFET N-CH 12V 5.7A 6TSOP
товар відсутній
PMN34LN,135 PMN34LN.pdf
PMN34LN,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 5.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-74
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 20 V
товар відсутній
PMN34UN,135 PMN34UN.pdf
PMN34UN,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 4.9A 6TSOP
товар відсутній
PMN40LN,135 PMN40LN.pdf
PMN40LN,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 5.4A 6TSOP
товар відсутній
PMN45EN,165 PMN45EN.pdf
PMN45EN,165
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 5.2A 6TSOP
товар відсутній
PMR280UN,115 PMR280UN.pdf
PMR280UN,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 980MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 200mA, 4.5V
Power Dissipation (Max): 530mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-75
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 20 V
товар відсутній
PMR290XN,115 PMR290XN.pdf
PMR290XN,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 970MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 970mA (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Power Dissipation (Max): 530mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 20 V
товар відсутній
PMR400UN,115 PMR400UN.pdf
PMR400UN,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 800MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 4.5V
Power Dissipation (Max): 530mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
товар відсутній
PMR780SN,115 PMR780SN.pdf
PMR780SN,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 60V 550MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V
Power Dissipation (Max): 530mW (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
товар відсутній
PMST5401,135 PMST5401_3.pdf
PMST5401,135
Виробник: NXP USA Inc.
Description: TRANS PNP 150V 0.3A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SC-70
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 200 mW
товар відсутній
PMST5401,115 PMST5401_3.pdf
PMST5401,115
Виробник: NXP USA Inc.
Description: TRANS PNP 150V 0.3A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SC-70
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 200 mW
товар відсутній
PMV117EN,215 PMV117EN.pdf
PMV117EN,215
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 2.5A SOT23
товар відсутній
PMV56XN,215
PMV56XN,215
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 3.76A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.76A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.92W (Tc)
Vgs(th) (Max) @ Id: 650mV @ 1mA (Min)
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
товар відсутній
PN2222A,126 DS_568_PN2222A.pdf
PN2222A,126
Виробник: NXP USA Inc.
Description: TRANS NPN 40V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
товар відсутній
PN2907A,126 DS_568_PN2907A.pdf
PN2907A,126
Виробник: NXP USA Inc.
Description: TRANS PNP 60V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товар відсутній
PRLL5817,135 PRLL5817-5819.pdf
PRLL5817,135
Виробник: NXP USA Inc.
Description: DIODE SCHOTTKY 20V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: SOD-87
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
PSMN004-36B,118 PSMN004_36P_36B.pdf
PSMN004-36B,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 36V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 36 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 20 V
товар відсутній
PSMN004-55W,127 PSMN004-55W_3.pdf
PSMN004-55W,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
товар відсутній
PSMN005-25D,118 PSMN005-25D_HG.pdf
PSMN005-25D,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 20 V
товар відсутній
PSMN005-55B,118 PSMN005-55B_P_HG.pdf
PSMN005-55B,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
товар відсутній
PSMN005-55P,127 PSMN005-55B_P_HG.pdf
PSMN005-55P,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
товар відсутній
PSMN009-100W,127 PSMN009-100W_2.pdf
PSMN009-100W,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
товар відсутній
PSMN010-55D,118
PSMN010-55D,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A DPAK
товар відсутній
PSMN020-150W,127 PSMN020-150W_2.pdf
PSMN020-150W,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 150V 73A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9537 pF @ 25 V
товар відсутній
PSMN040-200W,127 PSMN040-200W_2.pdf
PSMN040-200W,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 25 V
товар відсутній
PSSI3120CA,235 PSSI3120CA.pdf
PSSI3120CA,235
Виробник: NXP USA Inc.
Description: FILTER RC ESD SMD
Packaging: Tape & Reel (TR)
Voltage - Rated: 5V
Package / Case: TO-236-3, SC-59, SOT-23-3
Size / Dimension: 0.114" L x 0.052" W (2.90mm x 1.30mm)
Mounting Type: Surface Mount
Type: Band Stop
Values: R = 51Ohms, 55Ohms, C = 180pF
Height: 0.043" (1.09mm)
Filter Order: 3rd
Applications: Data Lines for Mobile Devices
Technology: RC
Resistance - Channel (Ohms): 51, 55
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 1
Current: 10 mA
товар відсутній
PTN3310D,118 PTN3310_PTN3311.pdf
PTN3310D,118
Виробник: NXP USA Inc.
Description: IC TRANSLTR UNIDIRECTIONAL 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 800Mbps
Supplier Device Package: 8-SO
Channel Type: Unidirectional
Output Signal: PECL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: LVDS
Part Status: Obsolete
Number of Circuits: 1
товар відсутній
PTN3331D,112 PTN3331.pdf
PTN3331D,112
Виробник: NXP USA Inc.
Description: IC DRIVER 4/0 16SO
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 4/0
Protocol: LVDS
Supplier Device Package: 16-SO
товар відсутній
PTN3332DH,112 PTN3332.pdf
PTN3332DH,112
Виробник: NXP USA Inc.
Description: IC DRIVER 4/0 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 4/0
Protocol: LVDS
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
товар відсутній
PTN3332D,118 PTN3332.pdf
PTN3332D,118
Виробник: NXP USA Inc.
Description: IC DRIVER 4/0 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 4/0
Protocol: LVDS
Supplier Device Package: 16-SO
Part Status: Obsolete
товар відсутній
PTN3341DH,112 PTN3341.pdf
PTN3341DH,112
Виробник: NXP USA Inc.
Description: IC DRIVER 4/0 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 4/0
Protocol: LVDS
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
товар відсутній
PTN3341DH,118 PTN3341.pdf
PTN3341DH,118
Виробник: NXP USA Inc.
Description: IC DRIVER 4/0 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 4/0
Protocol: LVDS
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
товар відсутній
PTN3342DH,112 PTN3342.pdf
PTN3342DH,112
Виробник: NXP USA Inc.
Description: IC RECEIVER 0/4 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/4
Protocol: LVDS
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
товар відсутній
PTN3342DH,118 PTN3342.pdf
PTN3342DH,118
Виробник: NXP USA Inc.
Description: IC RECEIVER 0/4 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/4
Protocol: LVDS
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
товар відсутній
PZM10NB1,115
PZM10NB1,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 10V 300MW SMT3
товар відсутній
PZM10NB2,115
PZM10NB2,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 10V 300MW SMT3
товар відсутній
PZM10NB2A,115
PZM10NB2A,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 10V 220MW SMT3
товар відсутній
PZM10NB3,115
PZM10NB3,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 10V 300MW SMT3
товар відсутній
PZM12NB,115
PZM12NB,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 12V 300MW SMT3
товар відсутній
PZM12NB2,115
PZM12NB2,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 12V 300MW SMT3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SMT3; MPAK
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
товар відсутній
PZM12NB2A,115
PZM12NB2A,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 12V 220MW SMT3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SMT3; MPAK
Power - Max: 220 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
товар відсутній
PZM12NB3,115
PZM12NB3,115
Виробник: NXP USA Inc.
Description: DIODE ZENER 12V 300MW SMT3
товар відсутній
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