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PHP45NQ15T,127 PHP45NQ15T,127 NXP USA Inc. PHP,PHB45NQ15T.pdf Description: MOSFET N-CH 150V 45.1A TO220AB
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PHP52N06T,127 PHP52N06T,127 NXP USA Inc. Description: MOSFET N-CH 60V 52A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1592 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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PHP66NQ03LT,127 PHP66NQ03LT,127 NXP USA Inc. PHP_PHU66NQ03LT_6.pdf Description: MOSFET N-CH 25V 66A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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PHP73N06T,127 PHP73N06T,127 NXP USA Inc. PHP%2CPHB73N06T.pdf Description: MOSFET N-CH 60V 73A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2464 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 166W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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PHP75NQ08T,127 PHP75NQ08T,127 NXP USA Inc. PHP75NQ08T.pdf Description: MOSFET N-CH 75V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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PHP78NQ03LT,127 PHP78NQ03LT,127 NXP USA Inc. PHP78NQ03LT.pdf Description: MOSFET N-CH 25V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1074 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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PHP83N03LT,127 PHP83N03LT,127 NXP USA Inc. PHP_PHB_PHE83N03LT.pdf Description: MOSFET N-CH 25V 75A TO220AB
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PHT2NQ10T,135 PHT2NQ10T,135 NXP USA Inc. PHT2NQ10T.pdf Description: MOSFET N-CH 100V 2.5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SC-73
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 1.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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PHT6N06LT,135 NXP USA Inc. Description: MOSFET N-CH 55V 2.5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±13V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SC-73
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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PHT6N06T,135 PHT6N06T,135 NXP USA Inc. Description: MOSFET N-CH 55V 5.5A SOT223
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SC-73
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8.3W (Tc)
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PHU101NQ03LT,127 PHU101NQ03LT,127 NXP USA Inc. PHU101NQ03LT.pdf Description: MOSFET N-CH 30V 75A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 166W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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PHU108NQ03LT,127 PHU108NQ03LT,127 NXP USA Inc. PHB_PHD_PHU108NQ03LT_3.pdf Description: MOSFET N-CH 25V 75A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 187W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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PHU11NQ10T,127 PHU11NQ10T,127 NXP USA Inc. PHU11NQ10T.pdf Description: MOSFET N-CH 100V 10.9A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 57.7W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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PHU66NQ03LT,127 PHU66NQ03LT,127 NXP USA Inc. PHP_PHU66NQ03LT_6.pdf Description: MOSFET N-CH 25V 66A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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PHU78NQ03LT,127 PHU78NQ03LT,127 NXP USA Inc. PHU78NQ03LT.pdf Description: MOSFET N-CH 25V 75A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 12 V
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PHW80NQ10T,127 PHW80NQ10T,127 NXP USA Inc. PHW80NQ10T_1.pdf Description: MOSFET N-CH 100V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4720 pF @ 25 V
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PHX18NQ11T,127 PHX18NQ11T,127 NXP USA Inc. PHX18NQ11T.pdf Description: MOSFET N-CH 110V 12.5A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 110 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 31.2W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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PHX20N06T,127 PHX20N06T,127 NXP USA Inc. PHX20N06T.pdf Description: MOSFET N-CH 55V 12.9A SOT186A
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PHX23NQ11T,127 PHX23NQ11T,127 NXP USA Inc. PHX23NQ11T.pdf Description: MOSFET N-CH 110V 16A TO220F
Rds On (Max) @ Id, Vgs: 70mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 110 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 41.6W (Tc)
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PHX34NQ11T,127 PHX34NQ11T,127 NXP USA Inc. PHX34NQ11T.pdf Description: MOSFET N-CH 110V 24.8A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 110 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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PHX45NQ11T,127 PHX45NQ11T,127 NXP USA Inc. PHX45NQ11T.pdf Description: MOSFET N-CH 110V 30.4A TO220F
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PHX8NQ11T,127 PHX8NQ11T,127 NXP USA Inc. PHX8NQ11T.pdf Description: MOSFET N-CH 110V 7.5A SOT186A
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PIP3101-A,127 PIP3101-A,127 NXP USA Inc. PIP3101-A.pdf Description: IC PWR DRVR N-CH 1:1 SOT263B-01
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PIP3102-R,118 PIP3102-R,118 NXP USA Inc. PIP3102-R.pdf Description: IC PWR DRIVER N-CHAN 1:1 SOT426
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PIP3213-R,118 PIP3213-R,118 NXP USA Inc. PIP3213-R_1.pdf Description: IC PWR DRIVER N-CHAN 1:1 SOT426
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: D2PAK
Ratio - Input:Output: 1:1
Current - Output (Max): 18A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5.5V ~ 35V
Input Type: Non-Inverting
Rds On (Typ): 15mOhm
Output Configuration: High Side
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Packaging: Tape & Reel (TR)
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PMBF4391,215 PMBF4391,215 NXP USA Inc. PMBF4391-4393.pdf Description: JFET N-CH 40V SOT23
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Power - Max: 250 mW
Drain to Source Voltage (Vdss): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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PMBF4392,215 PMBF4392,215 NXP USA Inc. PMBF4391-4393.pdf Description: JFET N-CH 40V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Power - Max: 250 mW
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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PMBF4393,215 PMBF4393,215 NXP USA Inc. PMBF4391-4393.pdf Description: JFET N-CH 40V SOT23
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 250 mW
Drain to Source Voltage (Vdss): 40 V
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PMBFJ111,215 PMBFJ111,215 NXP USA Inc. PMBFJ111_112_113.pdf Description: JFET N-CH 40V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 µA
Resistance - RDS(On): 30 Ohms
Power - Max: 300 mW
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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PMBFJ112,215 PMBFJ112,215 NXP USA Inc. PMBFJ111_112_113.pdf Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 300 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
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PMBFJ113,215 PMBFJ113,215 NXP USA Inc. PMBFJ111_112_113.pdf Description: JFET N-CH 40V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 µA
Resistance - RDS(On): 100 Ohms
Power - Max: 300 mW
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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PMBFJ175,215 PMBFJ175,215 NXP USA Inc. PMBFJ174_175_176_177_CNV.pdf Description: JFET P-CH 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 300 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
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PMBFJ308,215 PMBFJ308,215 NXP USA Inc. PMBFJ308_309_310.pdf Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
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PMBFJ309,215 PMBFJ309,215 NXP USA Inc. PMBFJ308_309_310.pdf Description: JFET N-CH 25V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Resistance - RDS(On): 50 Ohms
Power - Max: 250 mW
Drain to Source Voltage (Vdss): 25 V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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PMBT5401,235 PMBT5401,235 NXP USA Inc. PMBT5401_4.pdf Description: TRANS PNP 150V 0.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 250 mW
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PMBT5401,215 PMBT5401,215 NXP USA Inc. PMBT5401_4.pdf Description: TRANS PNP 150V 0.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 250 mW
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PMEM4010PD,115 PMEM4010PD,115 NXP USA Inc. PMEM4010PD.pdf Description: TRANS PNP 40V 1A 6TSOP
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 Мінімальне замовлення: 3000 шт
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PMEM4020AND,115 PMEM4020AND,115 NXP USA Inc. PMEM4020AND.pdf Description: TRANS NPN 40V 0.95A SC-74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: NPN + Diode (Isolated)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SC-74
Current - Collector (Ic) (Max): 950 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
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 Мінімальне замовлення: 3000 шт
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PMEM4020APD,115 PMEM4020APD,115 NXP USA Inc. PMEM4020APD.pdf Description: TRANS PNP 40V 0.75A SC-74
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 750 mA
Supplier Device Package: SC-74
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 530mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP + Diode (Isolated)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
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 Мінімальне замовлення: 3000 шт
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PMEM4020ND,115 PMEM4020ND,115 NXP USA Inc. PMEM4020ND.pdf Description: TRANS NPN 40V 0.95A 6TSOP
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PMEM4020PD,115 PMEM4020PD,115 NXP USA Inc. PMEM4020PD.pdf Description: TRANS PNP 40V 0.75A 6TSOP
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 Мінімальне замовлення: 3000 шт
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PMG370XN,115 PMG370XN,115 NXP USA Inc. Description: MOSFET N-CH 30V 960MA 6TSSOP
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 690mW (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 960mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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PMN23UN,135 PMN23UN,135 NXP USA Inc. PMN23UN.pdf Description: MOSFET N-CH 20V 6.3A 6TSOP
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-74
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Power Dissipation (Max): 1.75W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
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PMN27UN,135 PMN27UN,135 NXP USA Inc. PMN27UN.pdf Description: MOSFET N-CH 20V 5.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Supplier Device Package: SC-74
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
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PMN28UN,165 PMN28UN,165 NXP USA Inc. PMN28UN.pdf Description: MOSFET N-CH 12V 5.7A 6TSOP
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PMN34LN,135 PMN34LN,135 NXP USA Inc. PMN34LN.pdf Description: MOSFET N-CH 20V 5.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-74
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 20 V
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 Мінімальне замовлення: 10000 шт
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PMN34UN,135 PMN34UN,135 NXP USA Inc. PMN34UN.pdf Description: MOSFET N-CH 30V 4.9A 6TSOP
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PMN40LN,135 PMN40LN,135 NXP USA Inc. PMN40LN.pdf Description: MOSFET N-CH 30V 5.4A 6TSOP
Rds On (Max) @ Id, Vgs: 38mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SC-74
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.75W (Tc)
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PMN45EN,165 PMN45EN,165 NXP USA Inc. PMN45EN.pdf Description: MOSFET N-CH 30V 5.2A 6TSOP
товару немає в наявності
 Мінімальне замовлення: 10000 шт
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PMR280UN,115 PMR280UN,115 NXP USA Inc. PMR280UN.pdf Description: MOSFET N-CH 20V 980MA SC75
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-75
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 530mW (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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PMR290XN,115 PMR290XN,115 NXP USA Inc. PMR290XN.pdf Description: MOSFET N-CH 20V 970MA SC75
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-75
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 530mW (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 970mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 20 V
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PMR370XN,115 PMR370XN,115 NXP USA Inc. PMR370XN.pdf Description: MOSFET N-CH 30V 840MA SC75
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SC-75
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 530mW (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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PMR400UN,115 PMR400UN,115 NXP USA Inc. PMR400UN.pdf Description: MOSFET N-CH 30V 800MA SC75
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-75
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 530mW (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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PMR780SN,115 PMR780SN,115 NXP USA Inc. PMR780SN.pdf Description: MOSFET N-CH 60V 550MA SC75
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SC-75
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 530mW (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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PMST5401,135 PMST5401,135 NXP USA Inc. PMST5401_3.pdf Description: TRANS PNP 150V 0.3A SC70
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Obsolete
Supplier Device Package: SC-70
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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PMST5401,115 PMST5401,115 NXP USA Inc. PMST5401_3.pdf Description: TRANS PNP 150V 0.3A SC70
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Obsolete
Supplier Device Package: SC-70
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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PMV117EN,215 PMV117EN,215 NXP USA Inc. PMV117EN.pdf Description: MOSFET N-CH 30V 2.5A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 147 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23 (TO-236AB)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 830mW (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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PMV56XN,215 PMV56XN,215 NXP USA Inc. Description: MOSFET N-CH 20V 3.76A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Vgs(th) (Max) @ Id: 650mV @ 1mA (Min)
Power Dissipation (Max): 1.92W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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PN2222A,126 PN2222A,126 NXP USA Inc. DS_568_PN2222A.pdf Description: TRANS NPN 40V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
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PN2907A,126 PN2907A,126 NXP USA Inc. DS_568_PN2907A.pdf Description: TRANS PNP 60V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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PHP45NQ15T,127 PHP,PHB45NQ15T.pdf
PHP45NQ15T,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 150V 45.1A TO220AB
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PHP52N06T,127
PHP52N06T,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 60V 52A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1592 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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PHP66NQ03LT,127 PHP_PHU66NQ03LT_6.pdf
PHP66NQ03LT,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 66A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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PHP73N06T,127 PHP%2CPHB73N06T.pdf
PHP73N06T,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 60V 73A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2464 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 166W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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PHP75NQ08T,127 PHP75NQ08T.pdf
PHP75NQ08T,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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PHP78NQ03LT,127 PHP78NQ03LT.pdf
PHP78NQ03LT,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1074 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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PHP83N03LT,127 PHP_PHB_PHE83N03LT.pdf
PHP83N03LT,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 75A TO220AB
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PHT2NQ10T,135 PHT2NQ10T.pdf
PHT2NQ10T,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 2.5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SC-73
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 1.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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PHT6N06LT,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 2.5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±13V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SC-73
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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PHT6N06T,135
PHT6N06T,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 5.5A SOT223
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SC-73
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8.3W (Tc)
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PHU101NQ03LT,127 PHU101NQ03LT.pdf
PHU101NQ03LT,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 75A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 166W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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PHU108NQ03LT,127 PHB_PHD_PHU108NQ03LT_3.pdf
PHU108NQ03LT,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 75A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 187W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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PHU11NQ10T,127 PHU11NQ10T.pdf
PHU11NQ10T,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 10.9A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 57.7W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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PHU66NQ03LT,127 PHP_PHU66NQ03LT_6.pdf
PHU66NQ03LT,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 66A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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PHU78NQ03LT,127 PHU78NQ03LT.pdf
PHU78NQ03LT,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 75A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 12 V
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PHW80NQ10T,127 PHW80NQ10T_1.pdf
PHW80NQ10T,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4720 pF @ 25 V
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PHX18NQ11T,127 PHX18NQ11T.pdf
PHX18NQ11T,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 110V 12.5A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 110 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 31.2W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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PHX20N06T,127 PHX20N06T.pdf
PHX20N06T,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 12.9A SOT186A
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PHX23NQ11T,127 PHX23NQ11T.pdf
PHX23NQ11T,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 110V 16A TO220F
Rds On (Max) @ Id, Vgs: 70mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 110 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 41.6W (Tc)
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PHX34NQ11T,127 PHX34NQ11T.pdf
PHX34NQ11T,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 110V 24.8A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 110 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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PHX45NQ11T,127 PHX45NQ11T.pdf
PHX45NQ11T,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 110V 30.4A TO220F
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PHX8NQ11T,127 PHX8NQ11T.pdf
PHX8NQ11T,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 110V 7.5A SOT186A
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PIP3101-A,127 PIP3101-A.pdf
PIP3101-A,127
Виробник: NXP USA Inc.
Description: IC PWR DRVR N-CH 1:1 SOT263B-01
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PIP3102-R,118 PIP3102-R.pdf
PIP3102-R,118
Виробник: NXP USA Inc.
Description: IC PWR DRIVER N-CHAN 1:1 SOT426
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PIP3213-R,118 PIP3213-R_1.pdf
PIP3213-R,118
Виробник: NXP USA Inc.
Description: IC PWR DRIVER N-CHAN 1:1 SOT426
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: D2PAK
Ratio - Input:Output: 1:1
Current - Output (Max): 18A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5.5V ~ 35V
Input Type: Non-Inverting
Rds On (Typ): 15mOhm
Output Configuration: High Side
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Packaging: Tape & Reel (TR)
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PMBF4391,215 PMBF4391-4393.pdf
PMBF4391,215
Виробник: NXP USA Inc.
Description: JFET N-CH 40V SOT23
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Power - Max: 250 mW
Drain to Source Voltage (Vdss): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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PMBF4392,215 PMBF4391-4393.pdf
PMBF4392,215
Виробник: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Power - Max: 250 mW
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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PMBF4393,215 PMBF4391-4393.pdf
PMBF4393,215
Виробник: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 250 mW
Drain to Source Voltage (Vdss): 40 V
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PMBFJ111,215 PMBFJ111_112_113.pdf
PMBFJ111,215
Виробник: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 µA
Resistance - RDS(On): 30 Ohms
Power - Max: 300 mW
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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PMBFJ112,215 PMBFJ111_112_113.pdf
PMBFJ112,215
Виробник: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 300 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
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PMBFJ113,215 PMBFJ111_112_113.pdf
PMBFJ113,215
Виробник: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 µA
Resistance - RDS(On): 100 Ohms
Power - Max: 300 mW
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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PMBFJ175,215 PMBFJ174_175_176_177_CNV.pdf
PMBFJ175,215
Виробник: NXP USA Inc.
Description: JFET P-CH 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 300 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
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PMBFJ308,215 PMBFJ308_309_310.pdf
PMBFJ308,215
Виробник: NXP USA Inc.
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
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PMBFJ309,215 PMBFJ308_309_310.pdf
PMBFJ309,215
Виробник: NXP USA Inc.
Description: JFET N-CH 25V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Resistance - RDS(On): 50 Ohms
Power - Max: 250 mW
Drain to Source Voltage (Vdss): 25 V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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PMBT5401,235 PMBT5401_4.pdf
PMBT5401,235
Виробник: NXP USA Inc.
Description: TRANS PNP 150V 0.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 250 mW
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PMBT5401,215 PMBT5401_4.pdf
PMBT5401,215
Виробник: NXP USA Inc.
Description: TRANS PNP 150V 0.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 250 mW
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PMEM4010PD,115 PMEM4010PD.pdf
PMEM4010PD,115
Виробник: NXP USA Inc.
Description: TRANS PNP 40V 1A 6TSOP
товару немає в наявності
Мінімальне замовлення: 3000 шт
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PMEM4020AND,115 PMEM4020AND.pdf
PMEM4020AND,115
Виробник: NXP USA Inc.
Description: TRANS NPN 40V 0.95A SC-74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: NPN + Diode (Isolated)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SC-74
Current - Collector (Ic) (Max): 950 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
товару немає в наявності
Мінімальне замовлення: 3000 шт
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PMEM4020APD,115 PMEM4020APD.pdf
PMEM4020APD,115
Виробник: NXP USA Inc.
Description: TRANS PNP 40V 0.75A SC-74
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 750 mA
Supplier Device Package: SC-74
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 530mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP + Diode (Isolated)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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PMEM4020ND,115 PMEM4020ND.pdf
PMEM4020ND,115
Виробник: NXP USA Inc.
Description: TRANS NPN 40V 0.95A 6TSOP
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PMEM4020PD,115 PMEM4020PD.pdf
PMEM4020PD,115
Виробник: NXP USA Inc.
Description: TRANS PNP 40V 0.75A 6TSOP
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Мінімальне замовлення: 3000 шт
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PMG370XN,115
PMG370XN,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 960MA 6TSSOP
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 690mW (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 960mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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PMN23UN,135 PMN23UN.pdf
PMN23UN,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 6.3A 6TSOP
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-74
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Power Dissipation (Max): 1.75W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
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PMN27UN,135 PMN27UN.pdf
PMN27UN,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 5.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Supplier Device Package: SC-74
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
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PMN28UN,165 PMN28UN.pdf
PMN28UN,165
Виробник: NXP USA Inc.
Description: MOSFET N-CH 12V 5.7A 6TSOP
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PMN34LN,135 PMN34LN.pdf
PMN34LN,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 5.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-74
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 20 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
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PMN34UN,135 PMN34UN.pdf
PMN34UN,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 4.9A 6TSOP
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PMN40LN,135 PMN40LN.pdf
PMN40LN,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 5.4A 6TSOP
Rds On (Max) @ Id, Vgs: 38mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SC-74
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.75W (Tc)
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PMN45EN,165 PMN45EN.pdf
PMN45EN,165
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 5.2A 6TSOP
товару немає в наявності
Мінімальне замовлення: 10000 шт
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PMR280UN,115 PMR280UN.pdf
PMR280UN,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 980MA SC75
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-75
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 530mW (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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PMR290XN,115 PMR290XN.pdf
PMR290XN,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 970MA SC75
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-75
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 530mW (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 970mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 20 V
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PMR370XN,115 PMR370XN.pdf
PMR370XN,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 840MA SC75
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SC-75
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 530mW (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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PMR400UN,115 PMR400UN.pdf
PMR400UN,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 800MA SC75
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-75
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 530mW (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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PMR780SN,115 PMR780SN.pdf
PMR780SN,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 60V 550MA SC75
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SC-75
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 530mW (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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PMST5401,135 PMST5401_3.pdf
PMST5401,135
Виробник: NXP USA Inc.
Description: TRANS PNP 150V 0.3A SC70
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Obsolete
Supplier Device Package: SC-70
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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PMST5401,115 PMST5401_3.pdf
PMST5401,115
Виробник: NXP USA Inc.
Description: TRANS PNP 150V 0.3A SC70
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Obsolete
Supplier Device Package: SC-70
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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PMV117EN,215 PMV117EN.pdf
PMV117EN,215
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 2.5A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 147 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23 (TO-236AB)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 830mW (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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PMV56XN,215
PMV56XN,215
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 3.76A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Vgs(th) (Max) @ Id: 650mV @ 1mA (Min)
Power Dissipation (Max): 1.92W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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PN2222A,126 DS_568_PN2222A.pdf
PN2222A,126
Виробник: NXP USA Inc.
Description: TRANS NPN 40V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
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PN2907A,126 DS_568_PN2907A.pdf
PN2907A,126
Виробник: NXP USA Inc.
Description: TRANS PNP 60V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товару немає в наявності
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