| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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FDMC7200 | onsemi |
Description: MOSFET 2N-CH 30V 6A/8A 8PWR33Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW, 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 8A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMC7200 | onsemi |
Description: MOSFET 2N-CH 30V 6A/8A 8PWR33Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW, 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 8A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ESDL3141MXT5G | onsemi |
Description: ASYMMETRIC LOW CAP SURGE PROTECTPackaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 1.4pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A, 16.5A Voltage - Reverse Standoff (Typ): 14V (Max), 5V (Max) Supplier Device Package: 2-X2DFN (1x0.6) Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.1V, 5.5V Voltage - Clamping (Max) @ Ipp: 21.5V, 14V Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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NCV8535MN250R2G | onsemi |
Description: IC REG LINEAR 2.5V 500MA 10DFNQualification: AEC-Q100 Grade: Automotive Current - Supply (Max): 14 mA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.34V @ 500mA Control Features: Enable Voltage - Output (Min/Fixed): 2.5V Supplier Device Package: 10-DFN (3x3) Number of Regulators: 1 Voltage - Input (Max): 12V Current - Quiescent (Iq): 190 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 500mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 10-VFDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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NCV8535MN250R2G | onsemi |
Description: IC REG LINEAR 2.5V 500MA 10DFNQualification: AEC-Q100 Grade: Automotive Current - Supply (Max): 14 mA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.34V @ 500mA Control Features: Enable Voltage - Output (Min/Fixed): 2.5V Supplier Device Package: 10-DFN (3x3) Number of Regulators: 1 Voltage - Input (Max): 12V Current - Quiescent (Iq): 190 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 500mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 10-VFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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| MAX4372FEUK | onsemi |
Description: MAX43LOW-COSUCSMICROPOWEHIGH-SIC Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NCV2561SQT1G | onsemi |
Description: IC VIDEO AMP 1CH SC-88-6Qualification: AEC-Q100 Grade: Automotive Control Interface: Analog Voltage Supplier Device Package: SC-88/SC70-6/SOT-363 Standards: NTSC, PAL Applications: Consumer Video Voltage - Supply: 3.3V ~ 2.7V Function: Driver Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NCV2561SQT1G | onsemi |
Description: IC VIDEO AMP 1CH SC-88-6Qualification: AEC-Q100 Grade: Automotive Control Interface: Analog Voltage Supplier Device Package: SC-88/SC70-6/SOT-363 Standards: NTSC, PAL Applications: Consumer Video Voltage - Supply: 3.3V ~ 2.7V Function: Driver Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 2699 шт: термін постачання 21-31 дні (днів) |
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| LMC6482AIM/NAK2 | onsemi |
Description: LMC6482ACMAMP Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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LC87F0808AUQFPTLM-H | onsemi |
Description: IC MCU 8BIT 8KB FLASH 36QFPDigiKey Programmable: Not Verified Number of I/O: 28 Supplier Device Package: 36-QFP (7x7) Peripherals: LVD, POR, PWM, WDT Connectivity: SIO, UART/USART Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 10x10b Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 256 x 8 Program Memory Size: 8KB (8K x 8) Speed: 20MHz Mounting Type: Surface Mount Package / Case: 36-LQFP Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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NLV74VHC00DTR2G | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOPQualification: AEC-Q100 Grade: Automotive Current - Quiescent (Max): 2 µA Number of Circuits: 4 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Input Logic Level - Low: 0.5V Input Logic Level - High: 1.5V Supplier Device Package: 14-TSSOP Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
на замовлення 9700 шт: термін постачання 21-31 дні (днів) |
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NLV74VHC00DTR2G | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOPQualification: AEC-Q100 Grade: Automotive Current - Quiescent (Max): 2 µA Number of Circuits: 4 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Input Logic Level - Low: 0.5V Input Logic Level - High: 1.5V Supplier Device Package: 14-TSSOP Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 9818 шт: термін постачання 21-31 дні (днів) |
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NTMTS002N08MC | onsemi |
Description: PTNG 80V IN CEBU PQFN88Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-DFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4V @ 540µA Power Dissipation (Max): 3.3W (Ta) Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NTMTS002N08MC | onsemi |
Description: PTNG 80V IN CEBU PQFN88Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-DFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4V @ 540µA Power Dissipation (Max): 3.3W (Ta) |
на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
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NTBLS002N08MC | onsemi |
Description: MOSFET N-CH 80V 28A/238A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 2.9W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 530µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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NTBLS002N08MC | onsemi |
Description: MOSFET N-CH 80V 28A/238A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 2.9W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 530µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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NVMYS1D6N04CLTWG | onsemi |
Description: T6 40V LL AIZU SINGLE NCH LFPAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 3V @ 210µA Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NVMYS1D6N04CLTWG | onsemi |
Description: T6 40V LL AIZU SINGLE NCH LFPAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 3V @ 210µA Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Cut Tape (CT) |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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NVMYS1D6N04CLT1G | onsemi |
Description: T6 40V LL AIZU SINGLE NCH LFPAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 3V @ 210µA Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Tape & Reel (TR) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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NVMYS1D6N04CLT1G | onsemi |
Description: T6 40V LL AIZU SINGLE NCH LFPAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 3V @ 210µA Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Cut Tape (CT) |
на замовлення 17875 шт: термін постачання 21-31 дні (днів) |
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NVMYS4D6N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 21A/78A LFPAK4Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 2V @ 40µA Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NVMYS4D6N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 21A/78A LFPAK4Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 2V @ 40µA Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Cut Tape (CT) |
на замовлення 2939 шт: термін постачання 21-31 дні (днів) |
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NTMYS4D6N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 21A/78A LFPAK4Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 2V @ 40µA Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NTMYS4D6N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 21A/78A LFPAK4Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SNSR05F40NXT5G | onsemi |
Description: 0402 FC SCHOTTKY DIODES Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
| NSR05201MX4T5G | onsemi |
Description: 01005_TRENCH_SCHOTTKY_20VPackaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||
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KA7815AETU | onsemi |
Description: IC REG LINEAR 15V 1A TO220-3Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 15V PSRR: 58dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV68061SNAIT1G | onsemi |
Description: IDEAL DIODE NMOS DRIVERPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Type: N+1 ORing Controller Operating Temperature: -40°C ~ 150°C Voltage - Supply: 3V ~ 32V Applications: General Purpose Internal Switch(s): No FET Type: N-Channel Delay Time - OFF: 200 ns Ratio - Input:Output: 1:1 Supplier Device Package: 6-TSOP Grade: Automotive Current - Supply: 215 µA Qualification: AEC-Q100 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NCV68061SNAIT1G | onsemi |
Description: IDEAL DIODE NMOS DRIVERPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Type: N+1 ORing Controller Operating Temperature: -40°C ~ 150°C Voltage - Supply: 3V ~ 32V Applications: General Purpose Internal Switch(s): No FET Type: N-Channel Delay Time - OFF: 200 ns Ratio - Input:Output: 1:1 Supplier Device Package: 6-TSOP Grade: Automotive Current - Supply: 215 µA Qualification: AEC-Q100 |
на замовлення 9550 шт: термін постачання 21-31 дні (днів) |
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NL27WZ125USG-F22190 | onsemi |
Description: IC BUFFER NON-INVERT 5.5V US8Supplier Device Package: US8 Current - Output High, Low: 32mA, 32mA Number of Bits per Element: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NL27WZ125USG-F22190 | onsemi |
Description: IC BUFFER NON-INVERT 5.5V US8Supplier Device Package: US8 Current - Output High, Low: 32mA, 32mA Number of Bits per Element: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NLV27WZ125USG | onsemi |
Description: IC BUFFER NON-INVERT 5.5V US8Qualification: AEC-Q100 Grade: Automotive Supplier Device Package: US8 Current - Output High, Low: 32mA, 32mA Number of Bits per Element: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NLV27WZ125USG | onsemi |
Description: IC BUFFER NON-INVERT 5.5V US8Qualification: AEC-Q100 Grade: Automotive Supplier Device Package: US8 Current - Output High, Low: 32mA, 32mA Number of Bits per Element: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Cut Tape (CT) |
на замовлення 1043 шт: термін постачання 21-31 дні (днів) |
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NC7SZ11P6X-L22347 | onsemi |
Description: IC GATE AND 1CH 3-INP SC88Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Supplier Device Package: SC-70-6 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NC7SZ11P6X-L22347 | onsemi |
Description: IC GATE AND 1CH 3-INP SC88Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Supplier Device Package: SC-70-6 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 14104 шт: термін постачання 21-31 дні (днів) |
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| MAX4544EUT-T10 | onsemi |
Description: MAX45LVOLTAGSINGSUPPDUSPANALSWIT Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NRVBS360BNT3G | onsemi |
Description: DIODE SCHOTTKY 60V 4A SMBQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 30 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: SMB Current - Average Rectified (Io): 4A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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NRVBS360BNT3G | onsemi |
Description: DIODE SCHOTTKY 60V 4A SMBQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 30 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: SMB Current - Average Rectified (Io): 4A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) |
на замовлення 864 шт: термін постачання 21-31 дні (днів) |
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NVMFWD016N06CT1G | onsemi |
Description: MOSFET 2N-CH 60V 9A 8DFNQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 3.1W (Ta), 36W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 1380 шт: термін постачання 21-31 дні (днів) |
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NLV74VHC50DTR2G | onsemi |
Description: IC BUF NON-INVERT 5.5V 14TSSOP Qualification: AEC-Q100 Grade: Automotive Supplier Device Package: 14-TSSOP Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 1 Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 6 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NLV74VHC50DTR2G | onsemi |
Description: IC BUF NON-INVERT 5.5V 14TSSOP Qualification: AEC-Q100 Grade: Automotive Supplier Device Package: 14-TSSOP Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 1 Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 6 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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P6SMB6.8AT3 | onsemi |
Description: TVS ZENER UNIDIR 600W 6.8V SMBPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DFB20100 | onsemi |
Description: BRIDGE RECT 1PHASE 1KV 20A TS-6PCurrent - Average Rectified (Io): 20 A Voltage - Peak Reverse (Max): 1 kV Supplier Device Package: TS-6P Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Packaging: Tube Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A |
на замовлення 583 шт: термін постачання 21-31 дні (днів) |
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| NV24C32MUW3VTBG | onsemi |
Description: IC EEPROM 32KBIT I2C 8UDFN Packaging: Bulk Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: I²C Access Time: 900 ns Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
на замовлення 38405 шт: термін постачання 21-31 дні (днів) |
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FJP2145TU | onsemi |
Description: TRANS NPN 800V 5A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 120 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74LVX14SJ | onsemi |
Description: IC INVERT SCHMITT 6CH 1INP 14SOPFeatures: Schmitt Trigger Packaging: Tube Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 1 Supplier Device Package: 14-SOP Input Logic Level - High: 2.2V Input Logic Level - Low: 0.9V Max Propagation Delay @ V, Max CL: 14.1ns @ 3.3V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MOC217R2VM | onsemi |
Description: OPTOISO 2.5KV TRANS W/BASE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.07V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 8-SOIC Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Rise / Fall Time (Typ): 3.2µs, 4.7µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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MOC217R2VM | onsemi |
Description: OPTOISO 2.5KV TRANS W/BASE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.07V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 8-SOIC Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Rise / Fall Time (Typ): 3.2µs, 4.7µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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SC2901DR2G | onsemi |
Description: IC OPAMP 14SOIC Supplier Device Package: 14-SOIC Voltage - Input Offset: 2 mV Current - Input Bias: 25 nA Current - Supply: 800µA Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FDS6679AZ-G | onsemi |
Description: FDS6P-CHANNPOWERTRENMOSFET Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NST4617MX2T5G | onsemi |
Description: SS SOT883 GP XSTR 120VPackaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 112MHz Supplier Device Package: 3-X2DFN (1x0.6) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 166 mW |
на замовлення 104000 шт: термін постачання 21-31 дні (днів) |
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NST4617MX2T5G | onsemi |
Description: SS SOT883 GP XSTR 120VPackaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 112MHz Supplier Device Package: 3-X2DFN (1x0.6) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 166 mW |
на замовлення 104000 шт: термін постачання 21-31 дні (днів) |
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| 1N4737ARL | onsemi |
Description: 1N47ZENDIOD7.551W Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1N4737ATA | onsemi |
Description: 1N47ZENDIOD7.551W Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FGA20S140P | onsemi |
Description: IGBT TRENCH/FS 1400V 40A TO3PNPower - Max: 272 W Current - Collector Pulsed (Icm): 60 A Voltage - Collector Emitter Breakdown (Max): 1400 V Current - Collector (Ic) (Max): 40 A Gate Charge: 203.5 nC IGBT Type: Trench Field Stop Supplier Device Package: TO-3PN Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FQP9N25C | onsemi |
Description: MOSFET N-CH 250V 8.8A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMFS5C430NLWFAFT1G | onsemi |
Description: MOSFET N-CH 40V 38A/200A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 55500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C430NLWFAFT1G | onsemi |
Description: MOSFET N-CH 40V 38A/200A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 56703 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C430NWFET1G | onsemi |
Description: T6-40V N 1.7 MOHMS SLPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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NVMFS5C430NWFET1G | onsemi |
Description: T6-40V N 1.7 MOHMS SLPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1450 шт: термін постачання 21-31 дні (днів) |
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| FDMC7200 |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 6A/8A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Description: MOSFET 2N-CH 30V 6A/8A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 17.90 грн |
| FDMC7200 |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 6A/8A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Description: MOSFET 2N-CH 30V 6A/8A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.48 грн |
| 10+ | 39.41 грн |
| 100+ | 27.09 грн |
| 500+ | 21.25 грн |
| 1000+ | 19.29 грн |
| ESDL3141MXT5G |
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Виробник: onsemi
Description: ASYMMETRIC LOW CAP SURGE PROTECT
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 1.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A, 16.5A
Voltage - Reverse Standoff (Typ): 14V (Max), 5V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.1V, 5.5V
Voltage - Clamping (Max) @ Ipp: 21.5V, 14V
Power Line Protection: No
Description: ASYMMETRIC LOW CAP SURGE PROTECT
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 1.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A, 16.5A
Voltage - Reverse Standoff (Typ): 14V (Max), 5V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.1V, 5.5V
Voltage - Clamping (Max) @ Ipp: 21.5V, 14V
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| NCV8535MN250R2G |
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Виробник: onsemi
Description: IC REG LINEAR 2.5V 500MA 10DFN
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 14 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.34V @ 500mA
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 10-DFN (3x3)
Number of Regulators: 1
Voltage - Input (Max): 12V
Current - Quiescent (Iq): 190 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 2.5V 500MA 10DFN
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 14 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.34V @ 500mA
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 10-DFN (3x3)
Number of Regulators: 1
Voltage - Input (Max): 12V
Current - Quiescent (Iq): 190 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 51.31 грн |
| 6000+ | 47.50 грн |
| NCV8535MN250R2G |
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Виробник: onsemi
Description: IC REG LINEAR 2.5V 500MA 10DFN
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 14 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.34V @ 500mA
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 10-DFN (3x3)
Number of Regulators: 1
Voltage - Input (Max): 12V
Current - Quiescent (Iq): 190 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 2.5V 500MA 10DFN
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 14 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.34V @ 500mA
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 10-DFN (3x3)
Number of Regulators: 1
Voltage - Input (Max): 12V
Current - Quiescent (Iq): 190 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 171.64 грн |
| 10+ | 103.88 грн |
| 25+ | 88.49 грн |
| 100+ | 67.16 грн |
| 250+ | 59.54 грн |
| 500+ | 54.93 грн |
| 1000+ | 50.27 грн |
| NCV2561SQT1G |
![]() |
Виробник: onsemi
Description: IC VIDEO AMP 1CH SC-88-6
Qualification: AEC-Q100
Grade: Automotive
Control Interface: Analog Voltage
Supplier Device Package: SC-88/SC70-6/SOT-363
Standards: NTSC, PAL
Applications: Consumer Video
Voltage - Supply: 3.3V ~ 2.7V
Function: Driver
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: IC VIDEO AMP 1CH SC-88-6
Qualification: AEC-Q100
Grade: Automotive
Control Interface: Analog Voltage
Supplier Device Package: SC-88/SC70-6/SOT-363
Standards: NTSC, PAL
Applications: Consumer Video
Voltage - Supply: 3.3V ~ 2.7V
Function: Driver
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCV2561SQT1G |
![]() |
Виробник: onsemi
Description: IC VIDEO AMP 1CH SC-88-6
Qualification: AEC-Q100
Grade: Automotive
Control Interface: Analog Voltage
Supplier Device Package: SC-88/SC70-6/SOT-363
Standards: NTSC, PAL
Applications: Consumer Video
Voltage - Supply: 3.3V ~ 2.7V
Function: Driver
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: IC VIDEO AMP 1CH SC-88-6
Qualification: AEC-Q100
Grade: Automotive
Control Interface: Analog Voltage
Supplier Device Package: SC-88/SC70-6/SOT-363
Standards: NTSC, PAL
Applications: Consumer Video
Voltage - Supply: 3.3V ~ 2.7V
Function: Driver
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 2699 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.48 грн |
| 10+ | 43.23 грн |
| 25+ | 40.56 грн |
| 100+ | 28.85 грн |
| 250+ | 24.56 грн |
| 500+ | 23.33 грн |
| 1000+ | 17.51 грн |
| LC87F0808AUQFPTLM-H |
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Виробник: onsemi
Description: IC MCU 8BIT 8KB FLASH 36QFP
DigiKey Programmable: Not Verified
Number of I/O: 28
Supplier Device Package: 36-QFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 10x10b
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 36-LQFP
Packaging: Tape & Reel (TR)
Description: IC MCU 8BIT 8KB FLASH 36QFP
DigiKey Programmable: Not Verified
Number of I/O: 28
Supplier Device Package: 36-QFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 10x10b
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 36-LQFP
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| NLV74VHC00DTR2G |
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Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Input Logic Level - Low: 0.5V
Input Logic Level - High: 1.5V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Input Logic Level - Low: 0.5V
Input Logic Level - High: 1.5V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
на замовлення 9700 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 16.06 грн |
| 5000+ | 14.34 грн |
| 7500+ | 13.78 грн |
| NLV74VHC00DTR2G |
![]() |
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Input Logic Level - Low: 0.5V
Input Logic Level - High: 1.5V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Input Logic Level - Low: 0.5V
Input Logic Level - High: 1.5V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 9818 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.34 грн |
| 10+ | 38.74 грн |
| 25+ | 31.98 грн |
| 100+ | 23.09 грн |
| 250+ | 19.78 грн |
| 500+ | 17.78 грн |
| 1000+ | 15.86 грн |
| NTMTS002N08MC |
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Виробник: onsemi
Description: PTNG 80V IN CEBU PQFN88
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 540µA
Power Dissipation (Max): 3.3W (Ta)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: PTNG 80V IN CEBU PQFN88
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 540µA
Power Dissipation (Max): 3.3W (Ta)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTMTS002N08MC |
![]() |
Виробник: onsemi
Description: PTNG 80V IN CEBU PQFN88
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 540µA
Power Dissipation (Max): 3.3W (Ta)
Description: PTNG 80V IN CEBU PQFN88
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 540µA
Power Dissipation (Max): 3.3W (Ta)
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 502.48 грн |
| 10+ | 326.97 грн |
| 100+ | 237.99 грн |
| 500+ | 213.75 грн |
| NTBLS002N08MC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 28A/238A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V
Description: MOSFET N-CH 80V 28A/238A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 315.64 грн |
| NTBLS002N08MC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 28A/238A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V
Description: MOSFET N-CH 80V 28A/238A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 559.18 грн |
| 10+ | 416.79 грн |
| 25+ | 386.35 грн |
| 100+ | 331.26 грн |
| 250+ | 323.23 грн |
| NVMYS1D6N04CLTWG |
![]() |
Виробник: onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3V @ 210µA
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3V @ 210µA
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NVMYS1D6N04CLTWG |
![]() |
Виробник: onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3V @ 210µA
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3V @ 210µA
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.40 грн |
| 10+ | 111.06 грн |
| 100+ | 75.96 грн |
| NVMYS1D6N04CLT1G |
![]() |
Виробник: onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3V @ 210µA
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3V @ 210µA
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 53.16 грн |
| NVMYS1D6N04CLT1G |
![]() |
Виробник: onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3V @ 210µA
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3V @ 210µA
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
на замовлення 17875 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 180.96 грн |
| 10+ | 111.81 грн |
| 100+ | 76.47 грн |
| 500+ | 57.58 грн |
| 1000+ | 53.02 грн |
| NVMYS4D6N04CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NVMYS4D6N04CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
на замовлення 2939 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.53 грн |
| 10+ | 59.75 грн |
| 100+ | 41.81 грн |
| 500+ | 32.82 грн |
| 1000+ | 29.96 грн |
| NTMYS4D6N04CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTMYS4D6N04CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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| KA7815AETU |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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од. на суму грн.
| NCV68061SNAIT1G |
![]() |
Виробник: onsemi
Description: IDEAL DIODE NMOS DRIVER
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: N+1 ORing Controller
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3V ~ 32V
Applications: General Purpose
Internal Switch(s): No
FET Type: N-Channel
Delay Time - OFF: 200 ns
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Grade: Automotive
Current - Supply: 215 µA
Qualification: AEC-Q100
Description: IDEAL DIODE NMOS DRIVER
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: N+1 ORing Controller
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3V ~ 32V
Applications: General Purpose
Internal Switch(s): No
FET Type: N-Channel
Delay Time - OFF: 200 ns
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Grade: Automotive
Current - Supply: 215 µA
Qualification: AEC-Q100
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 27.25 грн |
| 6000+ | 25.61 грн |
| NCV68061SNAIT1G |
![]() |
Виробник: onsemi
Description: IDEAL DIODE NMOS DRIVER
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: N+1 ORing Controller
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3V ~ 32V
Applications: General Purpose
Internal Switch(s): No
FET Type: N-Channel
Delay Time - OFF: 200 ns
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Grade: Automotive
Current - Supply: 215 µA
Qualification: AEC-Q100
Description: IDEAL DIODE NMOS DRIVER
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: N+1 ORing Controller
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3V ~ 32V
Applications: General Purpose
Internal Switch(s): No
FET Type: N-Channel
Delay Time - OFF: 200 ns
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Grade: Automotive
Current - Supply: 215 µA
Qualification: AEC-Q100
на замовлення 9550 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.58 грн |
| 10+ | 41.66 грн |
| 25+ | 37.48 грн |
| 100+ | 30.90 грн |
| 250+ | 28.86 грн |
| 500+ | 27.63 грн |
| 1000+ | 26.25 грн |
| NL27WZ125USG-F22190 |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Supplier Device Package: US8
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC BUFFER NON-INVERT 5.5V US8
Supplier Device Package: US8
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NL27WZ125USG-F22190 |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Supplier Device Package: US8
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Description: IC BUFFER NON-INVERT 5.5V US8
Supplier Device Package: US8
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
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| NLV27WZ125USG |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: US8
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC BUFFER NON-INVERT 5.5V US8
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: US8
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
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од. на суму грн.
| NLV27WZ125USG |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: US8
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Description: IC BUFFER NON-INVERT 5.5V US8
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: US8
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
на замовлення 1043 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.46 грн |
| 10+ | 54.67 грн |
| 25+ | 51.36 грн |
| 100+ | 36.54 грн |
| 250+ | 31.10 грн |
| 500+ | 29.54 грн |
| 1000+ | 22.18 грн |
| NC7SZ11P6X-L22347 |
![]() |
Виробник: onsemi
Description: IC GATE AND 1CH 3-INP SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-70-6
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 1CH 3-INP SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-70-6
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.89 грн |
| 6000+ | 6.27 грн |
| NC7SZ11P6X-L22347 |
![]() |
Виробник: onsemi
Description: IC GATE AND 1CH 3-INP SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-70-6
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 1CH 3-INP SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-70-6
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 14104 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.07 грн |
| 14+ | 22.51 грн |
| 25+ | 20.28 грн |
| 100+ | 10.38 грн |
| 250+ | 10.03 грн |
| 500+ | 8.99 грн |
| 1000+ | 6.81 грн |
| NRVBS360BNT3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 4A SMB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 4A SMB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| NRVBS360BNT3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 4A SMB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 4A SMB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
на замовлення 864 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.33 грн |
| 10+ | 59.01 грн |
| 100+ | 45.90 грн |
| 500+ | 36.51 грн |
| NVMFWD016N06CT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 60V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.1W (Ta), 36W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.1W (Ta), 36W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 1380 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 239.98 грн |
| 10+ | 150.47 грн |
| 100+ | 104.59 грн |
| 500+ | 79.74 грн |
| NLV74VHC50DTR2G |
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 14-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 6
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 14-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 6
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 14.28 грн |
| NLV74VHC50DTR2G |
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 14-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 6
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 14-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 6
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.71 грн |
| 10+ | 35.60 грн |
| 25+ | 33.21 грн |
| 100+ | 23.14 грн |
| 250+ | 19.58 грн |
| 500+ | 18.69 грн |
| 1000+ | 13.57 грн |
| DFB20100 |
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Виробник: onsemi
Description: BRIDGE RECT 1PHASE 1KV 20A TS-6P
Current - Average Rectified (Io): 20 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Description: BRIDGE RECT 1PHASE 1KV 20A TS-6P
Current - Average Rectified (Io): 20 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
на замовлення 583 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 247.75 грн |
| 15+ | 145.63 грн |
| 105+ | 108.36 грн |
| 510+ | 83.41 грн |
| NV24C32MUW3VTBG |
Виробник: onsemi
Description: IC EEPROM 32KBIT I2C 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT I2C 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
на замовлення 38405 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 550+ | 42.71 грн |
| FJP2145TU |
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Виробник: onsemi
Description: TRANS NPN 800V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 120 W
Description: TRANS NPN 800V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 120 W
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| 74LVX14SJ |
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Виробник: onsemi
Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Features: Schmitt Trigger
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.2V
Input Logic Level - Low: 0.9V
Max Propagation Delay @ V, Max CL: 14.1ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Features: Schmitt Trigger
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.2V
Input Logic Level - Low: 0.9V
Max Propagation Delay @ V, Max CL: 14.1ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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| MOC217R2VM |
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Виробник: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.07V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.07V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 17.31 грн |
| 5000+ | 16.07 грн |
| 12500+ | 15.84 грн |
| MOC217R2VM |
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Виробник: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.07V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.07V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.14 грн |
| 10+ | 34.55 грн |
| 100+ | 22.62 грн |
| 1000+ | 16.76 грн |
| SC2901DR2G |
Виробник: onsemi
Description: IC OPAMP 14SOIC
Supplier Device Package: 14-SOIC
Voltage - Input Offset: 2 mV
Current - Input Bias: 25 nA
Current - Supply: 800µA
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC OPAMP 14SOIC
Supplier Device Package: 14-SOIC
Voltage - Input Offset: 2 mV
Current - Input Bias: 25 nA
Current - Supply: 800µA
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| NST4617MX2T5G |
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Виробник: onsemi
Description: SS SOT883 GP XSTR 120V
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 112MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 166 mW
Description: SS SOT883 GP XSTR 120V
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 112MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 166 mW
на замовлення 104000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 4.11 грн |
| 16000+ | 3.42 грн |
| 24000+ | 3.35 грн |
| 56000+ | 2.61 грн |
| NST4617MX2T5G |
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Виробник: onsemi
Description: SS SOT883 GP XSTR 120V
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 112MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 166 mW
Description: SS SOT883 GP XSTR 120V
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 112MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 166 mW
на замовлення 104000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.08 грн |
| 19+ | 16.08 грн |
| 100+ | 8.12 грн |
| 500+ | 6.22 грн |
| 1000+ | 4.61 грн |
| 2000+ | 3.88 грн |
| FGA20S140P |
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Виробник: onsemi
Description: IGBT TRENCH/FS 1400V 40A TO3PN
Power - Max: 272 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 203.5 nC
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: IGBT TRENCH/FS 1400V 40A TO3PN
Power - Max: 272 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 203.5 nC
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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| FQP9N25C |
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Виробник: onsemi
Description: MOSFET N-CH 250V 8.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Description: MOSFET N-CH 250V 8.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
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| NVMFS5C430NLWFAFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
на замовлення 55500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 72.96 грн |
| 3000+ | 68.13 грн |
| NVMFS5C430NLWFAFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
на замовлення 56703 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.67 грн |
| 10+ | 140.00 грн |
| 100+ | 97.32 грн |
| 500+ | 78.26 грн |
| NVMFS5C430NWFET1G |
![]() |
Виробник: onsemi
Description: T6-40V N 1.7 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
Description: T6-40V N 1.7 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NVMFS5C430NWFET1G |
![]() |
Виробник: onsemi
Description: T6-40V N 1.7 MOHMS SL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
Description: T6-40V N 1.7 MOHMS SL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 222.12 грн |
| 10+ | 139.55 грн |
| 100+ | 97.02 грн |
| 500+ | 78.12 грн |



























