| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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NVMFD5C470NLWFT1G | onsemi |
Description: MOSFET 2N-CH 40V 11A/36A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 24W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FGAF40N60UFTU | onsemi |
Description: IGBT 600V 40A TO-3PFPackaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-3PF Td (on/off) @ 25°C: 15ns/65ns Switching Energy: 470µJ (on), 130µJ (off) Test Condition: 300V, 20A, 10Ohm, 15V Gate Charge: 77 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 100 W |
на замовлення 127 шт: термін постачання 21-31 дні (днів) |
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FDD6296 | onsemi |
Description: MOSFET N-CH 30V 15A/50A DPAKPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V |
на замовлення 24388 шт: термін постачання 21-31 дні (днів) |
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MURF1620CT | onsemi |
Description: DIODE ARRAY GP 200V 8A TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-220FP Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||
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NV24C08DTVLT3G | onsemi |
Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Grade: Automotive Write Cycle Time - Word, Page: 4ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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NV24C08DTVLT3G | onsemi |
Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Grade: Automotive Write Cycle Time - Word, Page: 4ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 1912 шт: термін постачання 21-31 дні (днів) |
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NLV74VHC32DTR2G | onsemi |
Description: IC GATE OR 4CH 2-INP 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.9V ~ 4.4V Input Logic Level - Low: 0.1V ~ 0.36V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Grade: Automotive Number of Circuits: 4 Current - Quiescent (Max): 2 µA Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NLV74VHC32DTR2G | onsemi |
Description: IC GATE OR 4CH 2-INP 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.9V ~ 4.4V Input Logic Level - Low: 0.1V ~ 0.36V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Grade: Automotive Number of Circuits: 4 Current - Quiescent (Max): 2 µA Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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ECH8657-TL-H | onsemi |
Description: MOSFET 2N-CH 35V 4.5A 8ECHPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V FET Feature: Logic Level Gate Supplier Device Package: 8-ECH |
на замовлення 7069 шт: термін постачання 21-31 дні (днів) |
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ECH8402-TL-E | onsemi |
Description: MOSFET N-CH 30V 10A 8ECHPackaging: Bulk Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: 8-ECH Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V |
на замовлення 1035562 шт: термін постачання 21-31 дні (днів) |
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| ECH8601R-TL-EX | onsemi |
Description: NCH+NCH 2.5V DRIVE SERIES Packaging: Bulk |
на замовлення 98333 шт: термін постачання 21-31 дні (днів) |
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ECH8305-TL-E | onsemi |
Description: MOSFET P-CH 60V 4A 8ECH Packaging: Bulk Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 2A, 10V Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: 8-ECH Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V |
на замовлення 63650 шт: термін постачання 21-31 дні (днів) |
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ECH8301-TL-E | onsemi |
Description: P CHANNEL SILICON MOS FET Packaging: Bulk |
на замовлення 92692 шт: термін постачання 21-31 дні (днів) |
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ECH8315-TL-H | onsemi |
Description: MOSFET P-CH 30V 7.5A 8ECHPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V Power Dissipation (Max): 1.5W (Ta) Supplier Device Package: 8-ECH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ECH8315-TL-H | onsemi |
Description: MOSFET P-CH 30V 7.5A 8ECHPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V Power Dissipation (Max): 1.5W (Ta) Supplier Device Package: 8-ECH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V |
на замовлення 4665 шт: термін постачання 21-31 дні (днів) |
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| ECH8606-TL-H | onsemi |
Description: NCH+NCH 4V DRIVE SERIES Packaging: Bulk |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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| ECH8311-TL-H | onsemi |
Description: PCH 2.5V DRIVE SERIES Packaging: Bulk |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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| ECH8602R-TL-H | onsemi |
Description: NCH+NCH 2.5V DRIVE SERIES Packaging: Bulk |
на замовлення 126000 шт: термін постачання 21-31 дні (днів) |
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ECH8604-TL-E | onsemi |
Description: N-CHANNEL MOSFET Packaging: Bulk |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| ECH8201-TL-H | onsemi |
Description: TRANSISTORPackaging: Bulk |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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FJP13007H2TU-F080 | onsemi |
Description: TRANS NPN 400V 8A TO-220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Frequency - Transition: 4MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| AR0233ATSC17XUEA1-DPBR1 | onsemi |
Description: 2MP 1/3 CIS SOPackaging: Tray Package / Case: 80-LBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 2048H x 1280V Supplier Device Package: 80-IBGA (10x10) Frames per Second: 60 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AR0138AT3R00XUEA1-DPBM | onsemi |
Description: DIODE Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDS6679Z | onsemi |
Description: MOSFET P-CH 30V 13A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3803 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SB02W03C-TB-E | onsemi |
Description: DIODE SCHOTTKY BARRIERPackaging: Bulk |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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| FFAF30UA60S | onsemi |
Description: 30 A, 600 V, UITRAFAST II SINGLECurrent - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-3PF-3 Current - Average Rectified (Io): 30A Technology: Standard Reverse Recovery Time (trr): 90 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Bulk |
на замовлення 10290 шт: термін постачання 21-31 дні (днів) |
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| NCV57540DWKR2G | onsemi |
Description: ISOLATED DUAL-CHANNEL IGBT GATEPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width), 14 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 6.5A Technology: Capacitive Coupling Current - Output High, Low: 6.5A, 6.5A Voltage - Isolation: 5000Vrms Approval Agency: VDE Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 12ns, 10ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Pulse Width Distortion (Max): 20ns Number of Channels: 2 Voltage - Output Supply: 32V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| NCV57540DWKR2G | onsemi |
Description: ISOLATED DUAL-CHANNEL IGBT GATEPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width), 14 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 6.5A Technology: Capacitive Coupling Current - Output High, Low: 6.5A, 6.5A Voltage - Isolation: 5000Vrms Approval Agency: VDE Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 12ns, 10ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Pulse Width Distortion (Max): 20ns Number of Channels: 2 Voltage - Output Supply: 32V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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74LCX157M | onsemi |
Description: IC MULTIPLEXER 4 X 2:1 16SOICPackaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 4 x 2:1 Type: Multiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SOIC |
на замовлення 1349 шт: термін постачання 21-31 дні (днів) |
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FOD2742BV | onsemi |
Description: OPTOISO 2.5KV 1CH TRANS 8-SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -25°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 70V Number of Channels: 1 |
на замовлення 2999 шт: термін постачання 21-31 дні (днів) |
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FOD2741BS | onsemi |
Description: OPTOISOLATOR 5KV 1CH TRANS 8-SMDNumber of Channels: 1 Voltage - Output (Max): 30V Supplier Device Package: 8-SMD Current Transfer Ratio (Max): 200% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 10mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.5V (Max) Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 8-SMD, Gull Wing Packaging: Tube |
на замовлення 1898 шт: термін постачання 21-31 дні (днів) |
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FOD2741AV | onsemi |
Description: OPTOISOLATOR 5KV 1CH TRANS 8-DIPPackage / Case: 8-DIP (0.300", 7.62mm) Number of Channels: 1 Voltage - Output (Max): 30V Supplier Device Package: 8-DIP Current Transfer Ratio (Max): 200% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 10mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.5V (Max) Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Output Type: Transistor Packaging: Tube |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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FOD2741ATV | onsemi |
Description: OPTOISOLTR 5KV 1CH TRANS 8-MDIPNumber of Channels: 1 Voltage - Output (Max): 30V Supplier Device Package: 8-MDIP Current Transfer Ratio (Max): 200% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 10mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.5V (Max) Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 8-DIP (0.400", 10.16mm) Packaging: Bulk |
на замовлення 1016 шт: термін постачання 21-31 дні (днів) |
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FOD2711ASD | onsemi |
Description: OPTOISOLATOR 5KV 1CH TRANS 8-SMDPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.5V (Max) Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 8-SMD Voltage - Output (Max): 30V Number of Channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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FOD2711ASD | onsemi |
Description: OPTOISOLATOR 5KV 1CH TRANS 8-SMDPackaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.5V (Max) Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 8-SMD Voltage - Output (Max): 30V Number of Channels: 1 |
на замовлення 945 шт: термін постачання 21-31 дні (днів) |
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MURA220T3 | onsemi |
Description: DIODE STANDARD 200V 2A SMACurrent - Reverse Leakage @ Vr: 2 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 200 V Supplier Device Package: SMA Current - Average Rectified (Io): 2A Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
| PCFG40N65SMW | onsemi |
Description: IC Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MCH6626-TL-E | onsemi |
Description: MOSFET N/P-CH 20V 1.6A 6MCPH Packaging: Bulk Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A, 1A Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 10V Rds On (Max) @ Id, Vgs: 230mOhm @ 800mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4V FET Feature: Logic Level Gate Supplier Device Package: 6-MCPH |
на замовлення 48750 шт: термін постачання 21-31 дні (днів) |
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MC14043BD | onsemi |
Description: IC LATCH R-S QUAD NOR 16SOICPackaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 1:1 Logic Type: S-R Latch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 4 Current - Output High, Low: 8.8mA, 8.8mA Delay Time - Propagation: 60ns Supplier Device Package: 16-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC14043BDR2 | onsemi |
Description: IC LATCH R-S QUAD P/N 16-SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 1:1 Logic Type: S-R Latch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 4 Current - Output High, Low: 8.8mA, 8.8mA Delay Time - Propagation: 60ns Supplier Device Package: 16-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SZMMSZ4717T1G | onsemi |
Description: DIODE ZENER 43V 500MW SOD123Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 43 V Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 nA @ 32.6 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SZMMSZ4717T1G | onsemi |
Description: DIODE ZENER 43V 500MW SOD123Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 43 V Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 nA @ 32.6 V Qualification: AEC-Q101 |
на замовлення 5792 шт: термін постачання 21-31 дні (днів) |
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MCH3479-TL-H | onsemi |
Description: MOSFET N-CH 20V 3.5A SC70Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V Power Dissipation (Max): 900mW (Ta) Supplier Device Package: SC-70FL/MCPH3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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NSVDTA114EM3T5G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT723Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SOT-723 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||
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NSVDTA114EM3T5G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT723Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SOT-723 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 7670 шт: термін постачання 21-31 дні (днів) |
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NV24C128MUW3VTBG | onsemi |
Description: IC EEPROM 128KBIT I2C 8UDFNPackaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 16K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 1150 шт: термін постачання 21-31 дні (днів) |
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1SMB5928BT3 | onsemi |
Description: DIODE ZENER 13V 3W SMBTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: SMB Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MM74HC373WMX-L22178 | onsemi |
Description: IC BUFFER NON-INVERT 6V 20SOIC Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CD4724BCMX | onsemi |
Description: IC D-TYPE ADDR 1:8 16-SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Standard Mounting Type: Surface Mount Circuit: 1:8 Logic Type: D-Type, Addressable Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 15V Independent Circuits: 1 Current - Output High, Low: 8.8mA, 8.8mA Delay Time - Propagation: 50ns Supplier Device Package: 16-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCH077N65F-F085 | onsemi |
Description: MOSFET N-CH 650V 54A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2996 шт: термін постачання 21-31 дні (днів) |
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74LCX06MTCX | onsemi |
Description: IC INVERTER 6CH 1-INP 14TSSOPCurrent - Quiescent (Max): 10 µA Number of Circuits: 6 Max Propagation Delay @ V, Max CL: 3.7ns @ 3.3V, 50pF Input Logic Level - Low: 0.7V ~ 0.8V Input Logic Level - High: 1.7V ~ 2V Supplier Device Package: 14-TSSOP Number of Inputs: 1 Current - Output High, Low: -, 24mA Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Features: Open Drain Packaging: Cut Tape (CT) |
на замовлення 116295 шт: термін постачання 21-31 дні (днів) |
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74VCX00MTCX | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOPNumber of Circuits: 4 Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF Input Logic Level - Low: 0.7V ~ 0.8V Input Logic Level - High: 1.6V ~ 2V Supplier Device Package: 14-TSSOP Number of Inputs: 2 Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Current - Quiescent (Max): 20 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74VCX00MTCX | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOPCurrent - Quiescent (Max): 20 µA Number of Circuits: 4 Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF Input Logic Level - Low: 0.7V ~ 0.8V Input Logic Level - High: 1.6V ~ 2V Supplier Device Package: 14-TSSOP Number of Inputs: 2 Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LCX373MTCX | onsemi |
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOPSupplier Device Package: 20-TSSOP Delay Time - Propagation: 1.5ns Current - Output High, Low: 24mA, 24mA Independent Circuits: 1 Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: D-Type Transparent Latch Circuit: 8:8 Mounting Type: Surface Mount Output Type: Tri-State Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 11175 шт: термін постачання 21-31 дні (днів) |
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MC14504BDG | onsemi |
Description: IC XLTR VL UNIDIR 16-SOICPackaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Supplier Device Package: 16-SOIC Channel Type: Unidirectional Translator Type: Voltage Level Channels per Circuit: 6 Voltage - VCCA: 3 V ~ 18 V Voltage - VCCB: 3 V ~ 18 V Number of Circuits: 1 |
на замовлення 7661 шт: термін постачання 21-31 дні (днів) |
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AR0144ATSM20XUEA0-TRBR | onsemi |
Description: 1MP 1/4 CIS SOPackaging: Tape & Reel (TR) Package / Case: 63-LFBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1280H x 800V Supplier Device Package: 63-IBGA (7x7) Grade: Automotive Frames per Second: 60 Qualification: AEC-Q100 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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AR0144ATSM20XUEA0-TRBR | onsemi |
Description: 1MP 1/4 CIS SOPackaging: Cut Tape (CT) Package / Case: 63-LFBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1280H x 800V Supplier Device Package: 63-IBGA (7x7) Grade: Automotive Frames per Second: 60 Qualification: AEC-Q100 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| AR0144ATSM20XUEA0-TPBR | onsemi |
Description: 1MP 1/4 CIS SOPackaging: Tape & Reel (TR) Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1280H x 800V Grade: Automotive Frames per Second: 60.0 Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| AR0144ATSM20XUEA0-TPBR | onsemi |
Description: 1MP 1/4 CIS SOPackaging: Cut Tape (CT) Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1280H x 800V Grade: Automotive Frames per Second: 60.0 Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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AR0144ATSM20XUEA0-DPBR | onsemi |
Description: 1MP 1/4 CIS SOPackaging: Tray Package / Case: 63-LFBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1280H x 800V Supplier Device Package: 63-IBGA (7x7) Grade: Automotive Frames per Second: 60 Qualification: AEC-Q100 |
на замовлення 4097 шт: термін постачання 21-31 дні (днів) |
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| NVMFD5C470NLWFT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 40V 11A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FGAF40N60UFTU |
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Виробник: onsemi
Description: IGBT 600V 40A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
Description: IGBT 600V 40A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
на замовлення 127 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 303.27 грн |
| 30+ | 161.59 грн |
| 120+ | 132.97 грн |
| FDD6296 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 15A/50A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V
Description: MOSFET N-CH 30V 15A/50A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V
на замовлення 24388 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 644+ | 36.18 грн |
| MURF1620CT |
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Виробник: onsemi
Description: DIODE ARRAY GP 200V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE ARRAY GP 200V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| NV24C08DTVLT3G |
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Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NV24C08DTVLT3G |
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Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1912 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.46 грн |
| 25+ | 29.62 грн |
| 50+ | 27.23 грн |
| 100+ | 26.65 грн |
| 250+ | 25.87 грн |
| 500+ | 24.87 грн |
| 1000+ | 24.28 грн |
| NLV74VHC32DTR2G |
Виробник: onsemi
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 4.4V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 4.4V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 16.51 грн |
| NLV74VHC32DTR2G |
Виробник: onsemi
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 4.4V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 4.4V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.58 грн |
| 10+ | 41.88 грн |
| 25+ | 34.75 грн |
| 100+ | 24.99 грн |
| 250+ | 21.24 грн |
| 500+ | 18.93 грн |
| 1000+ | 16.72 грн |
| ECH8657-TL-H |
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Виробник: onsemi
Description: MOSFET 2N-CH 35V 4.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Description: MOSFET 2N-CH 35V 4.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
на замовлення 7069 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.58 грн |
| 10+ | 43.14 грн |
| 100+ | 28.17 грн |
| 500+ | 20.40 грн |
| 1000+ | 18.45 грн |
| ECH8402-TL-E |
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Виробник: onsemi
Description: MOSFET N-CH 30V 10A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
Description: MOSFET N-CH 30V 10A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
на замовлення 1035562 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1480+ | 15.39 грн |
| ECH8601R-TL-EX |
на замовлення 98333 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1401+ | 16.16 грн |
| ECH8305-TL-E |
Виробник: onsemi
Description: MOSFET P-CH 60V 4A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Description: MOSFET P-CH 60V 4A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
на замовлення 63650 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 993+ | 20.30 грн |
| ECH8301-TL-E |
на замовлення 92692 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 910+ | 22.33 грн |
| ECH8315-TL-H |
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Виробник: onsemi
Description: MOSFET P-CH 30V 7.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V
Description: MOSFET P-CH 30V 7.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 19.90 грн |
| ECH8315-TL-H |
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Виробник: onsemi
Description: MOSFET P-CH 30V 7.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V
Description: MOSFET P-CH 30V 7.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V
на замовлення 4665 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.28 грн |
| 10+ | 47.73 грн |
| 100+ | 31.37 грн |
| 500+ | 22.83 грн |
| 1000+ | 20.70 грн |
| ECH8606-TL-H |
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 987+ | 23.09 грн |
| ECH8311-TL-H |
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 919+ | 25.40 грн |
| ECH8602R-TL-H |
на замовлення 126000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 919+ | 25.40 грн |
| ECH8604-TL-E |
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 888+ | 26.17 грн |
| ECH8201-TL-H |
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на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 579+ | 40.03 грн |
| FJP13007H2TU-F080 |
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Виробник: onsemi
Description: TRANS NPN 400V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Description: TRANS NPN 400V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
товару немає в наявності
В кошику
од. на суму грн.
| AR0233ATSC17XUEA1-DPBR1 |
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Виробник: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 2048H x 1280V
Supplier Device Package: 80-IBGA (10x10)
Frames per Second: 60
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 2048H x 1280V
Supplier Device Package: 80-IBGA (10x10)
Frames per Second: 60
товару немає в наявності
В кошику
од. на суму грн.
| FDS6679Z |
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Виробник: onsemi
Description: MOSFET P-CH 30V 13A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3803 pF @ 15 V
Description: MOSFET P-CH 30V 13A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3803 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| SB02W03C-TB-E |
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на замовлення 54000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2959+ | 7.15 грн |
| FFAF30UA60S |
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Виробник: onsemi
Description: 30 A, 600 V, UITRAFAST II SINGLE
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-3PF-3
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bulk
Description: 30 A, 600 V, UITRAFAST II SINGLE
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-3PF-3
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bulk
на замовлення 10290 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 254+ | 82.81 грн |
| NCV57540DWKR2G |
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Виробник: onsemi
Description: ISOLATED DUAL-CHANNEL IGBT GATE
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 20ns
Number of Channels: 2
Voltage - Output Supply: 32V
Description: ISOLATED DUAL-CHANNEL IGBT GATE
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 20ns
Number of Channels: 2
Voltage - Output Supply: 32V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 186.12 грн |
| 2000+ | 172.49 грн |
| NCV57540DWKR2G |
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Виробник: onsemi
Description: ISOLATED DUAL-CHANNEL IGBT GATE
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 20ns
Number of Channels: 2
Voltage - Output Supply: 32V
Description: ISOLATED DUAL-CHANNEL IGBT GATE
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 20ns
Number of Channels: 2
Voltage - Output Supply: 32V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 371.01 грн |
| 10+ | 320.73 грн |
| 25+ | 303.19 грн |
| 100+ | 233.95 грн |
| 250+ | 209.93 грн |
| 500+ | 202.34 грн |
| 74LCX157M |
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Виробник: onsemi
Description: IC MULTIPLEXER 4 X 2:1 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Description: IC MULTIPLEXER 4 X 2:1 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
на замовлення 1349 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.38 грн |
| 10+ | 96.73 грн |
| 25+ | 91.82 грн |
| 100+ | 66.16 грн |
| 250+ | 58.47 грн |
| 500+ | 55.39 грн |
| 1000+ | 42.37 грн |
| FOD2742BV |
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Виробник: onsemi
Description: OPTOISO 2.5KV 1CH TRANS 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Number of Channels: 1
Description: OPTOISO 2.5KV 1CH TRANS 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Number of Channels: 1
на замовлення 2999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.99 грн |
| 10+ | 65.89 грн |
| 100+ | 49.55 грн |
| 500+ | 39.71 грн |
| 1000+ | 37.49 грн |
| FOD2741BS |
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Виробник: onsemi
Description: OPTOISOLATOR 5KV 1CH TRANS 8-SMD
Number of Channels: 1
Voltage - Output (Max): 30V
Supplier Device Package: 8-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SMD, Gull Wing
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 8-SMD
Number of Channels: 1
Voltage - Output (Max): 30V
Supplier Device Package: 8-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SMD, Gull Wing
Packaging: Tube
на замовлення 1898 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 142.40 грн |
| 10+ | 88.58 грн |
| 100+ | 63.51 грн |
| 500+ | 50.35 грн |
| 1000+ | 47.51 грн |
| FOD2741AV |
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Виробник: onsemi
Description: OPTOISOLATOR 5KV 1CH TRANS 8-DIP
Package / Case: 8-DIP (0.300", 7.62mm)
Number of Channels: 1
Voltage - Output (Max): 30V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Transistor
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 8-DIP
Package / Case: 8-DIP (0.300", 7.62mm)
Number of Channels: 1
Voltage - Output (Max): 30V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Transistor
Packaging: Tube
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 135.47 грн |
| 10+ | 93.39 грн |
| 100+ | 71.07 грн |
| 500+ | 57.46 грн |
| 1000+ | 54.44 грн |
| 2000+ | 51.88 грн |
| FOD2741ATV |
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Виробник: onsemi
Description: OPTOISOLTR 5KV 1CH TRANS 8-MDIP
Number of Channels: 1
Voltage - Output (Max): 30V
Supplier Device Package: 8-MDIP
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 8-DIP (0.400", 10.16mm)
Packaging: Bulk
Description: OPTOISOLTR 5KV 1CH TRANS 8-MDIP
Number of Channels: 1
Voltage - Output (Max): 30V
Supplier Device Package: 8-MDIP
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 8-DIP (0.400", 10.16mm)
Packaging: Bulk
на замовлення 1016 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.02 грн |
| 10+ | 91.39 грн |
| 100+ | 65.71 грн |
| 500+ | 52.18 грн |
| 1000+ | 49.26 грн |
| FOD2711ASD |
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Виробник: onsemi
Description: OPTOISOLATOR 5KV 1CH TRANS 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
Description: OPTOISOLATOR 5KV 1CH TRANS 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FOD2711ASD |
![]() |
Виробник: onsemi
Description: OPTOISOLATOR 5KV 1CH TRANS 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
Description: OPTOISOLATOR 5KV 1CH TRANS 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 111.61 грн |
| 10+ | 76.86 грн |
| 100+ | 58.02 грн |
| 500+ | 46.62 грн |
| MURA220T3 |
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Виробник: onsemi
Description: DIODE STANDARD 200V 2A SMA
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Supplier Device Package: SMA
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 200V 2A SMA
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Supplier Device Package: SMA
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| MCH6626-TL-E |
Виробник: onsemi
Description: MOSFET N/P-CH 20V 1.6A 6MCPH
Packaging: Bulk
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 10V
Rds On (Max) @ Id, Vgs: 230mOhm @ 800mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MCPH
Description: MOSFET N/P-CH 20V 1.6A 6MCPH
Packaging: Bulk
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 10V
Rds On (Max) @ Id, Vgs: 230mOhm @ 800mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MCPH
на замовлення 48750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2664+ | 7.60 грн |
| MC14043BD |
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Виробник: onsemi
Description: IC LATCH R-S QUAD NOR 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: S-R Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-SOIC
Description: IC LATCH R-S QUAD NOR 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: S-R Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| MC14043BDR2 |
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Виробник: onsemi
Description: IC LATCH R-S QUAD P/N 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: S-R Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-SOIC
Description: IC LATCH R-S QUAD P/N 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: S-R Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| SZMMSZ4717T1G |
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Виробник: onsemi
Description: DIODE ZENER 43V 500MW SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 nA @ 32.6 V
Qualification: AEC-Q101
Description: DIODE ZENER 43V 500MW SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 nA @ 32.6 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.41 грн |
| SZMMSZ4717T1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 43V 500MW SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 nA @ 32.6 V
Qualification: AEC-Q101
Description: DIODE ZENER 43V 500MW SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 nA @ 32.6 V
Qualification: AEC-Q101
на замовлення 5792 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.55 грн |
| 24+ | 12.45 грн |
| 100+ | 7.80 грн |
| 500+ | 5.40 грн |
| 1000+ | 4.78 грн |
| MCH3479-TL-H |
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Виробник: onsemi
Description: MOSFET N-CH 20V 3.5A SC70
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Supplier Device Package: SC-70FL/MCPH3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
Description: MOSFET N-CH 20V 3.5A SC70
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Supplier Device Package: SC-70FL/MCPH3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NSVDTA114EM3T5G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-723
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-723
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| NSVDTA114EM3T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-723
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-723
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 7670 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.70 грн |
| 29+ | 10.23 грн |
| 100+ | 6.34 грн |
| 500+ | 4.37 грн |
| 1000+ | 3.85 грн |
| 2000+ | 3.42 грн |
| NV24C128MUW3VTBG |
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Виробник: onsemi
Description: IC EEPROM 128KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 128KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.80 грн |
| 10+ | 46.03 грн |
| 25+ | 44.80 грн |
| 50+ | 41.15 грн |
| 100+ | 40.25 грн |
| 250+ | 39.06 грн |
| 500+ | 37.52 грн |
| 1000+ | 36.63 грн |
| 1SMB5928BT3 |
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Виробник: onsemi
Description: DIODE ZENER 13V 3W SMB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SMB
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V
Description: DIODE ZENER 13V 3W SMB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SMB
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V
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| CD4724BCMX |
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Виробник: onsemi
Description: IC D-TYPE ADDR 1:8 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 50ns
Supplier Device Package: 16-SOIC
Description: IC D-TYPE ADDR 1:8 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 50ns
Supplier Device Package: 16-SOIC
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| FCH077N65F-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 650V 54A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 54A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2996 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 798.98 грн |
| 30+ | 461.58 грн |
| 120+ | 394.16 грн |
| 510+ | 349.87 грн |
| 74LCX06MTCX |
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Виробник: onsemi
Description: IC INVERTER 6CH 1-INP 14TSSOP
Current - Quiescent (Max): 10 µA
Number of Circuits: 6
Max Propagation Delay @ V, Max CL: 3.7ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 1
Current - Output High, Low: -, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Features: Open Drain
Packaging: Cut Tape (CT)
Description: IC INVERTER 6CH 1-INP 14TSSOP
Current - Quiescent (Max): 10 µA
Number of Circuits: 6
Max Propagation Delay @ V, Max CL: 3.7ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 1
Current - Output High, Low: -, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Features: Open Drain
Packaging: Cut Tape (CT)
на замовлення 116295 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.80 грн |
| 10+ | 34.32 грн |
| 25+ | 32.29 грн |
| 100+ | 22.96 грн |
| 250+ | 19.54 грн |
| 500+ | 18.56 грн |
| 1000+ | 13.93 грн |
| 74VCX00MTCX |
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Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.6V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 20 µA
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.6V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 20 µA
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| 74VCX00MTCX |
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Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Current - Quiescent (Max): 20 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.6V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Current - Quiescent (Max): 20 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.6V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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| 74LCX373MTCX |
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Виробник: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Supplier Device Package: 20-TSSOP
Delay Time - Propagation: 1.5ns
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Transparent Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Supplier Device Package: 20-TSSOP
Delay Time - Propagation: 1.5ns
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Transparent Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 11175 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.69 грн |
| 10+ | 67.97 грн |
| 25+ | 56.90 грн |
| 100+ | 41.65 грн |
| 250+ | 35.87 грн |
| 500+ | 32.32 грн |
| 1000+ | 28.86 грн |
| MC14504BDG |
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Виробник: onsemi
Description: IC XLTR VL UNIDIR 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: 16-SOIC
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 6
Voltage - VCCA: 3 V ~ 18 V
Voltage - VCCB: 3 V ~ 18 V
Number of Circuits: 1
Description: IC XLTR VL UNIDIR 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: 16-SOIC
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 6
Voltage - VCCA: 3 V ~ 18 V
Voltage - VCCB: 3 V ~ 18 V
Number of Circuits: 1
на замовлення 7661 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 48+ | 27.49 грн |
| 96+ | 24.85 грн |
| AR0144ATSM20XUEA0-TRBR |
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Виробник: onsemi
Description: 1MP 1/4 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 63-LFBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 63-IBGA (7x7)
Grade: Automotive
Frames per Second: 60
Qualification: AEC-Q100
Description: 1MP 1/4 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 63-LFBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 63-IBGA (7x7)
Grade: Automotive
Frames per Second: 60
Qualification: AEC-Q100
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 1147.87 грн |
| AR0144ATSM20XUEA0-TRBR |
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Виробник: onsemi
Description: 1MP 1/4 CIS SO
Packaging: Cut Tape (CT)
Package / Case: 63-LFBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 63-IBGA (7x7)
Grade: Automotive
Frames per Second: 60
Qualification: AEC-Q100
Description: 1MP 1/4 CIS SO
Packaging: Cut Tape (CT)
Package / Case: 63-LFBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 63-IBGA (7x7)
Grade: Automotive
Frames per Second: 60
Qualification: AEC-Q100
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1812.71 грн |
| 10+ | 1454.43 грн |
| 25+ | 1288.18 грн |
| 100+ | 1169.92 грн |
| 500+ | 1091.93 грн |
| AR0144ATSM20XUEA0-TPBR |
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Виробник: onsemi
Description: 1MP 1/4 CIS SO
Packaging: Tape & Reel (TR)
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
Description: 1MP 1/4 CIS SO
Packaging: Tape & Reel (TR)
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 1120.39 грн |
| AR0144ATSM20XUEA0-TPBR |
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Виробник: onsemi
Description: 1MP 1/4 CIS SO
Packaging: Cut Tape (CT)
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
Description: 1MP 1/4 CIS SO
Packaging: Cut Tape (CT)
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2112.91 грн |
| 5+ | 1715.93 грн |
| 10+ | 1594.59 грн |
| 25+ | 1358.33 грн |
| 50+ | 1262.42 грн |
| 100+ | 1173.31 грн |
| 500+ | 1059.64 грн |
| AR0144ATSM20XUEA0-DPBR |
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Виробник: onsemi
Description: 1MP 1/4 CIS SO
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 63-IBGA (7x7)
Grade: Automotive
Frames per Second: 60
Qualification: AEC-Q100
Description: 1MP 1/4 CIS SO
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 63-IBGA (7x7)
Grade: Automotive
Frames per Second: 60
Qualification: AEC-Q100
на замовлення 4097 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1871.21 грн |
| 10+ | 1501.42 грн |
| 25+ | 1329.84 грн |
| 80+ | 1207.75 грн |
| 440+ | 1127.23 грн |


































