| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FSBB15CH60F | onsemi |
 Description: MODULE SPM 600V SPM27-CAPackaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Current: 15 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX85C4V7 | onsemi |
Description: DIODE ZENER 4.7V 1.3W DO41G Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 13 Ohms Supplier Device Package: DO-41G Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 1 V |
на замовлення 48117 шт: термін постачання 21-31 дні (днів) |
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MMBZ5234BLT1G | onsemi |
Description: DIODE ZENER 6.2V 225MW SOT23-3 Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 4 V |
на замовлення 60592 шт: термін постачання 21-31 дні (днів) |
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NXH160T120L2Q1SG | onsemi |
Description: PIM Q1 SPLIT T-TYPE NPC 160A 120 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: 150°C (TJ) NTC Thermistor: Yes IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 280 W Current - Collector Cutoff (Max): 800 µA Input Capacitance (Cies) @ Vce: 38164 pF @ 25 V Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 160A Supplier Device Package: 30-PIM (71x37.4) |
на замовлення 36 шт: термін постачання 21-31 дні (днів) |
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BAS16LT1 | onsemi |
 Description: DIODE STANDARD 75V 200MA SOT233Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SMSZ1010T1G | onsemi |
Description: SMSZ1010 - TRANSIENT VOLTAGE SUP Packaging: Bulk |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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LM78L12ACZ | onsemi |
Description: IC REG LINEAR 12V 100MA TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Output Type: Fixed Mounting Type: Through Hole Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-92-3 Voltage - Output (Min/Fixed): 12V PSRR: 65dB (120Hz) Protection Features: Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSVG3109SG6T1G | onsemi |
Description: IC AMP GPS 100MHZ-3.6GHZ SC88FL Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Frequency: 100MHz ~ 3.6GHz RF Type: General Purpose Voltage - Supply: 2.7V ~ 3V Gain: 27dB Current - Supply: 16mA Noise Figure: 4.3dB P1dB: 6.4dBm Test Frequency: 1GHz Supplier Device Package: SC-88FL/MCPH6 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4580 шт: термін постачання 21-31 дні (днів) |
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NLV74HC259ADTR2G | onsemi |
Description: IC D-TYPE ADDR 1:8 16-TSSOP Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Standard Mounting Type: Surface Mount Circuit: 1:8 Logic Type: D-Type, Addressable Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Delay Time - Propagation: 25ns Supplier Device Package: 16-TSSOP Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NLV74HC259ADTR2G | onsemi |
Description: IC D-TYPE ADDR 1:8 16-TSSOP Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Standard Mounting Type: Surface Mount Circuit: 1:8 Logic Type: D-Type, Addressable Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Delay Time - Propagation: 25ns Supplier Device Package: 16-TSSOP Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FPF1321UCX | onsemi |
Description: IC PWR SWITCH P-CHAN 2:1 6WLCSP Packaging: Tape & Reel (TR) Features: Load Discharge, Slew Rate Controlled Package / Case: 6-UFBGA, WLCSP Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 42mOhm Input Type: Non-Inverting Voltage - Load: 1.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Ratio - Input:Output: 2:1 Supplier Device Package: 6-WLCSP (0.96x1.66) Fault Protection: Reverse Current |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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FPF1321UCX | onsemi |
Description: IC PWR SWITCH P-CHAN 2:1 6WLCSP Packaging: Cut Tape (CT) Features: Load Discharge, Slew Rate Controlled Package / Case: 6-UFBGA, WLCSP Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 42mOhm Input Type: Non-Inverting Voltage - Load: 1.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Ratio - Input:Output: 2:1 Supplier Device Package: 6-WLCSP (0.96x1.66) Fault Protection: Reverse Current |
на замовлення 18650 шт: термін постачання 21-31 дні (днів) |
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SNSS30201MR6T1G | onsemi |
Description: TRANS NPN 30V 2A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Frequency - Transition: 300MHz Supplier Device Package: 6-TSOP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 535 mW |
на замовлення 96000 шт: термін постачання 21-31 дні (днів) |
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SNSS30201MR6T1G | onsemi |
Description: TRANS NPN 30V 2A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Frequency - Transition: 300MHz Supplier Device Package: 6-TSOP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 535 mW |
на замовлення 98990 шт: термін постачання 21-31 дні (днів) |
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NSS20201MR6T1G | onsemi |
Description: TRANS NPN 20V 2A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V Frequency - Transition: 200MHz Supplier Device Package: 6-TSOP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 460 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FQPF9N25C | onsemi |
Description: MOSFET N-CH 250V 8.8A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS020N06CT1G | onsemi |
Description: MOSFET N-CH 60V 9A/28A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V Power Dissipation (Max): 3.4W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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NTMFS020N06CT1G | onsemi |
Description: MOSFET N-CH 60V 9A/28A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V Power Dissipation (Max): 3.4W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V |
на замовлення 22476 шт: термін постачання 21-31 дні (днів) |
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NVTYS010N06CLTWG | onsemi |
Description: T6 60V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 47W (Tc) Vgs(th) (Max) @ Id: 2V @ 35µA Supplier Device Package: 8-LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2070 шт: термін постачання 21-31 дні (днів) |
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NTNS4CS69NTCG | onsemi |
Description: NTNS4CS69NTCG - TRENCH 6 30V NFE Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 3457078 шт: термін постачання 21-31 дні (днів) |
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4MN10CH-TL-E | onsemi |
Description: BIP NPN 0.1A 200V Packaging: Bulk Package / Case: SC-96 Mounting Type: Surface Mount Transistor Type: NPN Power - Max: 600mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 200V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V Frequency - Transition: 400MHz Supplier Device Package: 3-CPH |
на замовлення 38970 шт: термін постачання 21-31 дні (днів) |
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SZESD7104MTWTAG | onsemi |
Description: BI-DIRECTIONAL 4 LINE TVS Packaging: Cut Tape (CT) Package / Case: 10-WFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: HDMI, USB Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 10-WDFNW (2.5x1) Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 10V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 174000 шт: термін постачання 21-31 дні (днів) |
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NSBC123JPDP6T5G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-963 |
на замовлення 192000 шт: термін постачання 21-31 дні (днів) |
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NSBC123JPDP6T5G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-963 |
на замовлення 192000 шт: термін постачання 21-31 дні (днів) |
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| LA6339ML-TE-L-E | onsemi |
Description: COMPARATORS Packaging: Bulk |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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NSBC144EDP6T5G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-963 |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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NSBC144EDP6T5G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-963 |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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1N5238B | onsemi |
Description: DIODE ZENER 8.7V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 8.7 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V |
на замовлення 17555 шт: термін постачання 21-31 дні (днів) |
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MT9M114EBLSTCZ-CR1 | onsemi |
Description: SENSOR IMAGE 1MP CMOS 55ODCSP Packaging: Tray Package / Case: 55-WFBGA, CSPBGA Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 3.1V Pixel Size: 1.9µm x 1.9µm Active Pixel Array: 1296H x 976V Supplier Device Package: 55-ODCSP (4.65x3.85) Frames per Second: 120.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MT9M114EBLSTCZH3-GEVB | onsemi |
Description: BOARD EVAL 1 MP 1/6 SOC CIS COLO Packaging: Bulk Contents: Board(s) Sensor Type: Image Sensor Utilized IC / Part: MT9M114 Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MT9M114EBLSTCZDH-GEVB | onsemi |
Description: BOARD EVAL HIGH-SPEED CIS HB Packaging: Bulk Contents: Board(s) Sensor Type: Image Sensor Utilized IC / Part: MT9M114 Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4933GP | onsemi |
Description: DIODE STANDARD 50V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4933 | onsemi |
Description: DIODE STANDARD 50V 1A AXIAL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS5C442NWFET1G | onsemi |
Description: T6-40V N 2.3 MOHMS SL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS5C442NWFET1G | onsemi |
Description: T6-40V N 2.3 MOHMS SL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1488 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C442NWFAFT3G | onsemi |
Description: MOSFET N-CH 40V 29A/140A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SD1668R | onsemi |
Description: Power Bipolar Transistor, 7A, 50 Packaging: Bulk |
на замовлення 1182 шт: термін постачання 21-31 дні (днів) |
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MC10181L | onsemi |
Description: ARITHMETIC LOGIC UNIT, 10K SERIE Packaging: Bulk |
на замовлення 57 шт: термін постачання 21-31 дні (днів) |
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74F381PC | onsemi |
Description: IC ARITHMETIC LOGIC 4BIT 20-DIP Packaging: Tube Package / Case: 20-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Bits: 4 Logic Type: Arithmetic Logic Unit Operating Temperature: 0°C ~ 70°C Supply Voltage: 4.5V ~ 5.5V Supplier Device Package: 20-PDIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBT2222AT | onsemi |
Description: TRANS NPN 40V 0.6A SC-89-3 Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 300MHz Supplier Device Package: SC-89-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBT2222AT | onsemi |
Description: TRANS NPN 40V 0.6A SC-89-3 Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 300MHz Supplier Device Package: SC-89-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTTFS080N10GTAG | onsemi |
Description: 100V MVSOA IN U8FL PACKAGE Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 4V @ 22µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560.5 pF @ 50 V |
на замовлення 10253 шт: термін постачання 21-31 дні (днів) |
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MC14528BCPG | onsemi |
Description: IC MULTIVIBRATOR 90NS 16DIP Packaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: Monostable Operating Temperature: -55°C ~ 125°C Propagation Delay: 90 ns Independent Circuits: 2 Current - Output High, Low: 8.8mA, 8.8mA Schmitt Trigger Input: No Supplier Device Package: 16-PDIP Voltage - Supply: 3 V ~ 18 V |
на замовлення 1317 шт: термін постачання 21-31 дні (днів) |
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KA3842BDTF | onsemi |
Description: IC OFFLINE SWITCH 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 70°C (TA) Duty Cycle: 97% Frequency - Switching: Up to 500kHz Internal Switch(s): No Voltage - Supply (Vcc/Vdd): 12V ~ 25V Supplier Device Package: 14-SOIC Voltage - Start Up: 16 V Control Features: Frequency Control |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT1025LI-25-A2 | onsemi |
Description: CAT1025 - SUPERVISORY CIRCUIT WI Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active High/Active Low Operating Temperature: -40°C ~ 85°C Number of Voltages Monitored: 1 Reset Timeout: 130ms Minimum Voltage - Threshold: 2.55V, 2.7V Supplier Device Package: 8-PDIP DigiKey Programmable: Not Verified |
на замовлення 1553 шт: термін постачання 21-31 дні (днів) |
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FGH40N60SMDF-F085 | onsemi |
Description: IGBT FIELD STOP 600V 80A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 18ns/110ns Switching Energy: 1.3mJ (on), 260µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 122 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 349 W Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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EMI8141MUTAG | onsemi |
Description: CMC 100MA 2LN SMD ESD Packaging: Cut Tape (CT) Features: TVS Diode ESD Protection Package / Case: 6-XFDFN Filter Type: Signal Line Size / Dimension: 0.055" L x 0.053" W (1.40mm x 1.35mm) Mounting Type: Surface Mount Number of Lines: 2 Operating Temperature: -40°C ~ 85°C Height (Max): 0.020" (0.50mm) Current Rating (Max): 100mA DC Resistance (DCR) (Max): 6Ohm (Typ) |
на замовлення 30307 шт: термін постачання 21-31 дні (днів) |
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6N136TSR2VM | onsemi |
Description: OPTOISO 5KV TRANS W/BASE 8SMT Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SMD Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 250ns, 260ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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6N136TSR2VM | onsemi |
Description: OPTOISO 5KV TRANS W/BASE 8SMT Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SMD Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 250ns, 260ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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6N136VM | onsemi |
Description: OPTOISO 5KV TRANS W/BASE 8-DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-DIP Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 250ns, 260ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
, SC-63.JPG "MC78M08CDTXM") |
MC78M08CDTXM | onsemi |
Description: IC REG LINEAR 8V 500MA DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: D-Pak Voltage - Output (Min/Fixed): 8V PSRR: 80dB (120Hz) Voltage Dropout (Max): 2V @ 500mA (Typ) Protection Features: Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HGTG40N60A4 | onsemi |
Description: IGBT 600V 75A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 25ns/145ns Switching Energy: 400µJ (on), 370µJ (off) Test Condition: 390V, 40A, 2.2Ohm, 15V Gate Charge: 350 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 625 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSB50825AS | onsemi |
Description: MODULE SPM 250V 3.6A 23PWRSMD Packaging: Tape & Reel (TR) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 3.6 A Voltage: 250 V |
на замовлення 14400 шт: термін постачання 21-31 дні (днів) |
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FSB50825AS | onsemi |
Description: MODULE SPM 250V 3.6A 23PWRSMD Packaging: Cut Tape (CT) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 3.6 A Voltage: 250 V |
на замовлення 14765 шт: термін постачання 21-31 дні (днів) |
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FSB50825AB | onsemi |
Description: FET 250V 3.6A 23PWRDIP MOD Packaging: Tube Package / Case: 23-PowerDIP Module (0.644", 16.35mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 3.6 A Voltage: 250 V |
на замовлення 177 шт: термін постачання 21-31 дні (днів) |
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NFAQ0560R43T | onsemi |
Description: IGBT 3P 600V 38DIP Packaging: Bulk Package / Case: 38-PowerDIP Module (0.610", 24.00mm), 24 Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Voltage: 600 V |
на замовлення 307 шт: термін постачання 21-31 дні (днів) |
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NFAQ0560R46T | onsemi |
Description: DIPS6 V3 RC, 600V/5A SHORT LEAD Packaging: Tube Package / Case: 38-PowerDIP Module (0.610", 24.00mm), 24 Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Current: 5 A Voltage: 600 V |
на замовлення 13148 шт: термін постачання 21-31 дні (днів) |
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NFAQ1060L33T | onsemi |
Description: MOD IPM INV 600V 10A 38DIP Packaging: Tube Package / Case: 38-PowerDIP Module (0.610", 24.00mm), 24 Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Current: 10 A Voltage: 600 V |
на замовлення 389 шт: термін постачання 21-31 дні (днів) |
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| NLHV001USG | onsemi |
Description: NLHV001 - 1-BIT GATE PULSE MODUL Packaging: Bulk Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Function: Modulator RF Type: General Purpose Secondary Attributes: 15V ~ 38V Supply Supplier Device Package: US8 |
на замовлення 162000 шт: термін постачання 21-31 дні (днів) |
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LA1828-E | onsemi |
Description: SINGLE-CHIP TUNER IC FOR PORTABL Packaging: Bulk |
на замовлення 4380 шт: термін постачання 21-31 дні (днів) |
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| FSBB15CH60F |
|
Виробник: onsemi
Description: MODULE SPM 600V SPM27-CA
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
Description: MODULE SPM 600V SPM27-CA
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
товару немає в наявності
В кошику
од. на суму грн.
| BZX85C4V7 |
|
Виробник: onsemi
Description: DIODE ZENER 4.7V 1.3W DO41G
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-41G
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Description: DIODE ZENER 4.7V 1.3W DO41G
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-41G
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
на замовлення 48117 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8876+ | 2.23 грн |
| MMBZ5234BLT1G |
|
Виробник: onsemi
Description: DIODE ZENER 6.2V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Description: DIODE ZENER 6.2V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
на замовлення 60592 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 9.32 грн |
| 62+ | 4.86 грн |
| 120+ | 2.51 грн |
| 500+ | 2.09 грн |
| 1000+ | 1.82 грн |
| NXH160T120L2Q1SG |
|
Виробник: onsemi
Description: PIM Q1 SPLIT T-TYPE NPC 160A 120
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 38164 pF @ 25 V
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 160A
Supplier Device Package: 30-PIM (71x37.4)
Description: PIM Q1 SPLIT T-TYPE NPC 160A 120
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 38164 pF @ 25 V
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 160A
Supplier Device Package: 30-PIM (71x37.4)
на замовлення 36 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6685.84 грн |
| 21+ | 5211.53 грн |
| BAS16LT1 | |
|
Виробник: onsemi
Description: DIODE STANDARD 75V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STANDARD 75V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товару немає в наявності
В кошику
од. на суму грн.
| SMSZ1010T1G |
|
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11539+ | 2.13 грн |
| LM78L12ACZ |
|
Виробник: onsemi
Description: IC REG LINEAR 12V 100MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 12V
PSRR: 65dB (120Hz)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 12V 100MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 12V
PSRR: 65dB (120Hz)
Protection Features: Over Temperature, Short Circuit
товару немає в наявності
В кошику
од. на суму грн.
| NSVG3109SG6T1G |
|
Виробник: onsemi
Description: IC AMP GPS 100MHZ-3.6GHZ SC88FL
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 100MHz ~ 3.6GHz
RF Type: General Purpose
Voltage - Supply: 2.7V ~ 3V
Gain: 27dB
Current - Supply: 16mA
Noise Figure: 4.3dB
P1dB: 6.4dBm
Test Frequency: 1GHz
Supplier Device Package: SC-88FL/MCPH6
Grade: Automotive
Qualification: AEC-Q100
Description: IC AMP GPS 100MHZ-3.6GHZ SC88FL
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 100MHz ~ 3.6GHz
RF Type: General Purpose
Voltage - Supply: 2.7V ~ 3V
Gain: 27dB
Current - Supply: 16mA
Noise Figure: 4.3dB
P1dB: 6.4dBm
Test Frequency: 1GHz
Supplier Device Package: SC-88FL/MCPH6
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4580 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.25 грн |
| 10+ | 37.00 грн |
| 25+ | 34.80 грн |
| 100+ | 24.76 грн |
| 250+ | 21.07 грн |
| 500+ | 20.02 грн |
| 1000+ | 15.03 грн |
| NLV74HC259ADTR2G |
|
Виробник: onsemi
Description: IC D-TYPE ADDR 1:8 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Delay Time - Propagation: 25ns
Supplier Device Package: 16-TSSOP
Grade: Automotive
Qualification: AEC-Q100
Description: IC D-TYPE ADDR 1:8 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Delay Time - Propagation: 25ns
Supplier Device Package: 16-TSSOP
Grade: Automotive
Qualification: AEC-Q100
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| NLV74HC259ADTR2G |
|
Виробник: onsemi
Description: IC D-TYPE ADDR 1:8 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Delay Time - Propagation: 25ns
Supplier Device Package: 16-TSSOP
Grade: Automotive
Qualification: AEC-Q100
Description: IC D-TYPE ADDR 1:8 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Delay Time - Propagation: 25ns
Supplier Device Package: 16-TSSOP
Grade: Automotive
Qualification: AEC-Q100
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В кошику
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| FPF1321UCX |
|
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 2:1 6WLCSP
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 42mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 2:1
Supplier Device Package: 6-WLCSP (0.96x1.66)
Fault Protection: Reverse Current
Description: IC PWR SWITCH P-CHAN 2:1 6WLCSP
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 42mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 2:1
Supplier Device Package: 6-WLCSP (0.96x1.66)
Fault Protection: Reverse Current
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 41.68 грн |
| 6000+ | 39.24 грн |
| 9000+ | 38.79 грн |
| 15000+ | 35.93 грн |
| FPF1321UCX |
|
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 2:1 6WLCSP
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 42mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 2:1
Supplier Device Package: 6-WLCSP (0.96x1.66)
Fault Protection: Reverse Current
Description: IC PWR SWITCH P-CHAN 2:1 6WLCSP
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 42mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 2:1
Supplier Device Package: 6-WLCSP (0.96x1.66)
Fault Protection: Reverse Current
на замовлення 18650 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 147.49 грн |
| 10+ | 88.73 грн |
| 25+ | 74.75 грн |
| 100+ | 55.33 грн |
| 250+ | 48.06 грн |
| 500+ | 43.58 грн |
| 1000+ | 39.17 грн |
| SNSS30201MR6T1G |
|
Виробник: onsemi
Description: TRANS NPN 30V 2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 535 mW
Description: TRANS NPN 30V 2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 535 mW
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.05 грн |
| 6000+ | 4.78 грн |
| SNSS30201MR6T1G |
|
Виробник: onsemi
Description: TRANS NPN 30V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 535 mW
Description: TRANS NPN 30V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 535 mW
на замовлення 98990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.60 грн |
| 14+ | 22.20 грн |
| 100+ | 11.20 грн |
| 500+ | 9.31 грн |
| 1000+ | 7.25 грн |
| NSS20201MR6T1G |
|
Виробник: onsemi
Description: TRANS NPN 20V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V
Frequency - Transition: 200MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 460 mW
Description: TRANS NPN 20V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V
Frequency - Transition: 200MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 460 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.14 грн |
| 10+ | 34.76 грн |
| 100+ | 24.03 грн |
| 500+ | 18.85 грн |
| 1000+ | 16.04 грн |
| FQPF9N25C |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 8.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Description: MOSFET N-CH 250V 8.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
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В кошику
од. на суму грн.
| NTMFS020N06CT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 17.33 грн |
| 3000+ | 14.93 грн |
| NTMFS020N06CT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
на замовлення 22476 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.31 грн |
| 10+ | 42.23 грн |
| 100+ | 28.41 грн |
| 500+ | 20.94 грн |
| NVTYS010N06CLTWG |
|
Виробник: onsemi
Description: T6 60V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 35µA
Supplier Device Package: 8-LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6 60V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 35µA
Supplier Device Package: 8-LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2070 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 84.61 грн |
| 10+ | 54.87 грн |
| 100+ | 38.20 грн |
| 500+ | 28.83 грн |
| 1000+ | 26.53 грн |
| NTNS4CS69NTCG |
Виробник: onsemi
Description: NTNS4CS69NTCG - TRENCH 6 30V NFE
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: NTNS4CS69NTCG - TRENCH 6 30V NFE
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 3457078 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3957+ | 5.89 грн |
| 4MN10CH-TL-E |
Виробник: onsemi
Description: BIP NPN 0.1A 200V
Packaging: Bulk
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Power - Max: 600mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 200V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: 3-CPH
Description: BIP NPN 0.1A 200V
Packaging: Bulk
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Power - Max: 600mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 200V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: 3-CPH
на замовлення 38970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2049+ | 11.04 грн |
| SZESD7104MTWTAG |
|
Виробник: onsemi
Description: BI-DIRECTIONAL 4 LINE TVS
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-WDFNW (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: BI-DIRECTIONAL 4 LINE TVS
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-WDFNW (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 174000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.05 грн |
| 13+ | 23.47 грн |
| 100+ | 14.08 грн |
| 500+ | 12.24 грн |
| 1000+ | 8.32 грн |
| NSBC123JPDP6T5G |
|
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
на замовлення 192000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 3.55 грн |
| 16000+ | 3.11 грн |
| 24000+ | 3.03 грн |
| NSBC123JPDP6T5G |
|
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
на замовлення 192000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.06 грн |
| 21+ | 14.35 грн |
| 100+ | 8.97 грн |
| 500+ | 6.23 грн |
| 1000+ | 5.53 грн |
| 2000+ | 4.93 грн |
| LA6339ML-TE-L-E |
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2049+ | 10.46 грн |
| NSBC144EDP6T5G |
|
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 4.43 грн |
| 16000+ | 3.89 грн |
| 24000+ | 3.70 грн |
| 40000+ | 3.26 грн |
| NSBC144EDP6T5G |
|
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.06 грн |
| 21+ | 14.35 грн |
| 100+ | 8.97 грн |
| 500+ | 6.23 грн |
| 1000+ | 5.53 грн |
| 2000+ | 4.93 грн |
| 1N5238B |
|
Виробник: onsemi
Description: DIODE ZENER 8.7V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Description: DIODE ZENER 8.7V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
на замовлення 17555 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 6.99 грн |
| 66+ | 4.56 грн |
| 100+ | 3.06 грн |
| 500+ | 2.18 грн |
| 1000+ | 1.94 грн |
| 2000+ | 1.73 грн |
| 5000+ | 1.48 грн |
| 10000+ | 1.34 грн |
| MT9M114EBLSTCZ-CR1 |
|
Виробник: onsemi
Description: SENSOR IMAGE 1MP CMOS 55ODCSP
Packaging: Tray
Package / Case: 55-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 3.1V
Pixel Size: 1.9µm x 1.9µm
Active Pixel Array: 1296H x 976V
Supplier Device Package: 55-ODCSP (4.65x3.85)
Frames per Second: 120.0
Description: SENSOR IMAGE 1MP CMOS 55ODCSP
Packaging: Tray
Package / Case: 55-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 3.1V
Pixel Size: 1.9µm x 1.9µm
Active Pixel Array: 1296H x 976V
Supplier Device Package: 55-ODCSP (4.65x3.85)
Frames per Second: 120.0
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од. на суму грн.
| MT9M114EBLSTCZH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1 MP 1/6 SOC CIS COLO
Packaging: Bulk
Contents: Board(s)
Sensor Type: Image Sensor
Utilized IC / Part: MT9M114
Supplied Contents: Board(s)
Description: BOARD EVAL 1 MP 1/6 SOC CIS COLO
Packaging: Bulk
Contents: Board(s)
Sensor Type: Image Sensor
Utilized IC / Part: MT9M114
Supplied Contents: Board(s)
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В кошику
од. на суму грн.
| MT9M114EBLSTCZDH-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL HIGH-SPEED CIS HB
Packaging: Bulk
Contents: Board(s)
Sensor Type: Image Sensor
Utilized IC / Part: MT9M114
Supplied Contents: Board(s)
Description: BOARD EVAL HIGH-SPEED CIS HB
Packaging: Bulk
Contents: Board(s)
Sensor Type: Image Sensor
Utilized IC / Part: MT9M114
Supplied Contents: Board(s)
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В кошику
од. на суму грн.
| 1N4933GP |
|
Виробник: onsemi
Description: DIODE STANDARD 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE STANDARD 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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В кошику
од. на суму грн.
| 1N4933 |
|
Виробник: onsemi
Description: DIODE STANDARD 50V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE STANDARD 50V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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В кошику
од. на суму грн.
| NVMFS5C442NWFET1G |
|
Виробник: onsemi
Description: T6-40V N 2.3 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6-40V N 2.3 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| NVMFS5C442NWFET1G |
|
Виробник: onsemi
Description: T6-40V N 2.3 MOHMS SL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6-40V N 2.3 MOHMS SL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1488 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 142.83 грн |
| 10+ | 114.74 грн |
| 100+ | 91.31 грн |
| 500+ | 72.50 грн |
| NVMFS5C442NWFAFT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 29A/140A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 40V 29A/140A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| 2SD1668R |
на замовлення 1182 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 533+ | 39.99 грн |
| MC10181L |
|
на замовлення 57 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 1081.90 грн |
| 74F381PC |
|
Виробник: onsemi
Description: IC ARITHMETIC LOGIC 4BIT 20-DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Bits: 4
Logic Type: Arithmetic Logic Unit
Operating Temperature: 0°C ~ 70°C
Supply Voltage: 4.5V ~ 5.5V
Supplier Device Package: 20-PDIP
Description: IC ARITHMETIC LOGIC 4BIT 20-DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Bits: 4
Logic Type: Arithmetic Logic Unit
Operating Temperature: 0°C ~ 70°C
Supply Voltage: 4.5V ~ 5.5V
Supplier Device Package: 20-PDIP
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од. на суму грн.
| MMBT2222AT |
|
Виробник: onsemi
Description: TRANS NPN 40V 0.6A SC-89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SC-89-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Description: TRANS NPN 40V 0.6A SC-89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SC-89-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
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| MMBT2222AT |
|
Виробник: onsemi
Description: TRANS NPN 40V 0.6A SC-89-3
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SC-89-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Description: TRANS NPN 40V 0.6A SC-89-3
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SC-89-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
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од. на суму грн.
| NTTFS080N10GTAG |
|
Виробник: onsemi
Description: 100V MVSOA IN U8FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 22µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560.5 pF @ 50 V
Description: 100V MVSOA IN U8FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 22µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560.5 pF @ 50 V
на замовлення 10253 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 88.49 грн |
| 10+ | 53.22 грн |
| 100+ | 35.07 грн |
| 500+ | 25.57 грн |
| MC14528BCPG |
|
Виробник: onsemi
Description: IC MULTIVIBRATOR 90NS 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Monostable
Operating Temperature: -55°C ~ 125°C
Propagation Delay: 90 ns
Independent Circuits: 2
Current - Output High, Low: 8.8mA, 8.8mA
Schmitt Trigger Input: No
Supplier Device Package: 16-PDIP
Voltage - Supply: 3 V ~ 18 V
Description: IC MULTIVIBRATOR 90NS 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Monostable
Operating Temperature: -55°C ~ 125°C
Propagation Delay: 90 ns
Independent Circuits: 2
Current - Output High, Low: 8.8mA, 8.8mA
Schmitt Trigger Input: No
Supplier Device Package: 16-PDIP
Voltage - Supply: 3 V ~ 18 V
на замовлення 1317 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 26+ | 848.41 грн |
| KA3842BDTF |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Duty Cycle: 97%
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Voltage - Supply (Vcc/Vdd): 12V ~ 25V
Supplier Device Package: 14-SOIC
Voltage - Start Up: 16 V
Control Features: Frequency Control
Description: IC OFFLINE SWITCH 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Duty Cycle: 97%
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Voltage - Supply (Vcc/Vdd): 12V ~ 25V
Supplier Device Package: 14-SOIC
Voltage - Start Up: 16 V
Control Features: Frequency Control
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| CAT1025LI-25-A2 |
|
Виробник: onsemi
Description: CAT1025 - SUPERVISORY CIRCUIT WI
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 2.55V, 2.7V
Supplier Device Package: 8-PDIP
DigiKey Programmable: Not Verified
Description: CAT1025 - SUPERVISORY CIRCUIT WI
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 2.55V, 2.7V
Supplier Device Package: 8-PDIP
DigiKey Programmable: Not Verified
на замовлення 1553 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 606+ | 37.00 грн |
| FGH40N60SMDF-F085 |
Виробник: onsemi
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/110ns
Switching Energy: 1.3mJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 122 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/110ns
Switching Energy: 1.3mJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 122 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
Grade: Automotive
Qualification: AEC-Q101
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| EMI8141MUTAG |
|
Виробник: onsemi
Description: CMC 100MA 2LN SMD ESD
Packaging: Cut Tape (CT)
Features: TVS Diode ESD Protection
Package / Case: 6-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.055" L x 0.053" W (1.40mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 2
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 6Ohm (Typ)
Description: CMC 100MA 2LN SMD ESD
Packaging: Cut Tape (CT)
Features: TVS Diode ESD Protection
Package / Case: 6-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.055" L x 0.053" W (1.40mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 2
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 6Ohm (Typ)
на замовлення 30307 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.76 грн |
| 10+ | 57.03 грн |
| 25+ | 54.15 грн |
| 100+ | 39.02 грн |
| 250+ | 34.48 грн |
| 500+ | 32.67 грн |
| 1000+ | 24.99 грн |
| 6N136TSR2VM |
|
Виробник: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8SMT
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISO 5KV TRANS W/BASE 8SMT
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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| 6N136TSR2VM |
|
Виробник: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8SMT
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISO 5KV TRANS W/BASE 8SMT
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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| 6N136VM |
|
Виробник: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISO 5KV TRANS W/BASE 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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| MC78M08CDTXM |
|
Виробник: onsemi
Description: IC REG LINEAR 8V 500MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: D-Pak
Voltage - Output (Min/Fixed): 8V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 8V 500MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: D-Pak
Voltage - Output (Min/Fixed): 8V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
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| HGTG40N60A4 |
|
Виробник: onsemi
Description: IGBT 600V 75A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 25ns/145ns
Switching Energy: 400µJ (on), 370µJ (off)
Test Condition: 390V, 40A, 2.2Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 625 W
Description: IGBT 600V 75A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 25ns/145ns
Switching Energy: 400µJ (on), 370µJ (off)
Test Condition: 390V, 40A, 2.2Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 625 W
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| FSB50825AS |
|
Виробник: onsemi
Description: MODULE SPM 250V 3.6A 23PWRSMD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 3.6 A
Voltage: 250 V
Description: MODULE SPM 250V 3.6A 23PWRSMD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 3.6 A
Voltage: 250 V
на замовлення 14400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 450+ | 475.13 грн |
| FSB50825AS |
|
Виробник: onsemi
Description: MODULE SPM 250V 3.6A 23PWRSMD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 3.6 A
Voltage: 250 V
Description: MODULE SPM 250V 3.6A 23PWRSMD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 3.6 A
Voltage: 250 V
на замовлення 14765 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 947.02 грн |
| 10+ | 637.99 грн |
| 100+ | 483.07 грн |
| FSB50825AB |
|
Виробник: onsemi
Description: FET 250V 3.6A 23PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.644", 16.35mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 3.6 A
Voltage: 250 V
Description: FET 250V 3.6A 23PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.644", 16.35mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 3.6 A
Voltage: 250 V
на замовлення 177 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 547.26 грн |
| 10+ | 361.64 грн |
| NFAQ0560R43T |
|
Виробник: onsemi
Description: IGBT 3P 600V 38DIP
Packaging: Bulk
Package / Case: 38-PowerDIP Module (0.610", 24.00mm), 24 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Voltage: 600 V
Description: IGBT 3P 600V 38DIP
Packaging: Bulk
Package / Case: 38-PowerDIP Module (0.610", 24.00mm), 24 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Voltage: 600 V
на замовлення 307 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 974.97 грн |
| 10+ | 656.08 грн |
| NFAQ0560R46T |
|
Виробник: onsemi
Description: DIPS6 V3 RC, 600V/5A SHORT LEAD
Packaging: Tube
Package / Case: 38-PowerDIP Module (0.610", 24.00mm), 24 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 5 A
Voltage: 600 V
Description: DIPS6 V3 RC, 600V/5A SHORT LEAD
Packaging: Tube
Package / Case: 38-PowerDIP Module (0.610", 24.00mm), 24 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 5 A
Voltage: 600 V
на замовлення 13148 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 941.59 грн |
| 10+ | 633.13 грн |
| 100+ | 478.73 грн |
| 500+ | 422.26 грн |
| NFAQ1060L33T |
Виробник: onsemi
Description: MOD IPM INV 600V 10A 38DIP
Packaging: Tube
Package / Case: 38-PowerDIP Module (0.610", 24.00mm), 24 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
Description: MOD IPM INV 600V 10A 38DIP
Packaging: Tube
Package / Case: 38-PowerDIP Module (0.610", 24.00mm), 24 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
на замовлення 389 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1221.04 грн |
| 10+ | 832.04 грн |
| NLHV001USG |
Виробник: onsemi
Description: NLHV001 - 1-BIT GATE PULSE MODUL
Packaging: Bulk
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Function: Modulator
RF Type: General Purpose
Secondary Attributes: 15V ~ 38V Supply
Supplier Device Package: US8
Description: NLHV001 - 1-BIT GATE PULSE MODUL
Packaging: Bulk
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Function: Modulator
RF Type: General Purpose
Secondary Attributes: 15V ~ 38V Supply
Supplier Device Package: US8
на замовлення 162000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2664+ | 8.10 грн |