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NVTYS029N08HLTWG NVTYS029N08HLTWG onsemi nvtys029n08hl-d.pdf Description: T8 80V N-CH LL IN LFPAK33 PACKAG
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2828 шт:
термін постачання 21-31 дні (днів)
4+93.15 грн
10+56.51 грн
100+37.43 грн
500+27.44 грн
1000+24.96 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NVTYS029N08HTWG NVTYS029N08HTWG onsemi nvtys029n08h-d.pdf Description: T8 80V N-CH SG IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5995 шт:
термін постачання 21-31 дні (днів)
4+93.15 грн
10+56.51 грн
100+37.43 грн
500+27.44 грн
1000+24.96 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NVMYS029N08LHTWG NVMYS029N08LHTWG onsemi nvmys029n08lh-d.pdf Description: T8 80V LL LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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NTLUS029N06T6TAG NTLUS029N06T6TAG onsemi NTLUS029N06T6-D.pdf Description: MOSFET N-CH 60V 3.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+19.92 грн
6000+18.17 грн
9000+16.82 грн
Мінімальне замовлення: 3000
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NTLUS029N06T6TAG NTLUS029N06T6TAG onsemi NTLUS029N06T6-D.pdf Description: MOSFET N-CH 60V 3.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 30 V
на замовлення 17970 шт:
термін постачання 21-31 дні (днів)
6+52.01 грн
10+43.73 грн
100+30.28 грн
500+23.75 грн
1000+20.21 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
FDS6699S FDS6699S onsemi ONSM-S-A0003585240-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 21A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 21A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 15 V
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FDS6699S FDS6699S onsemi ONSM-S-A0003585240-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 21A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 21A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 15 V
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FDMS3610S FDMS3610S onsemi fdms3610s-d.pdf Description: MOSFET 2N-CH 25V 17.5/30A PWR56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power56
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74AC05SCX 74AC05SCX onsemi 74AC05.pdf Description: IC INVERTER OD 6CH 1IN 14SOIC
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 24mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
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FGH60N60SFDTU-F085 FGH60N60SFDTU-F085 onsemi fgh60n60sf_f085-d.pdf Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 26ns/134ns
Switching Energy: 1.97mJ (on), 570µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
Grade: Automotive
Qualification: AEC-Q101
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FGL40N120ANDTU FGL40N120ANDTU onsemi fgl40n120and-d.pdf Description: IGBT NPT 1200V 64A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
Supplier Device Package: TO-264-3
IGBT Type: NPT
Td (on/off) @ 25°C: 15ns/110ns
Switching Energy: 2.3mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
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FGL40N120ANTU FGL40N120ANTU onsemi FGL40N120AN.pdf Description: IGBT NPT 1200V 64A TO-264-3
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
Supplier Device Package: TO-264-3
IGBT Type: NPT
Td (on/off) @ 25°C: 15ns/110ns
Switching Energy: 2.3mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
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NLVSX5014MUTAG onsemi Description: 4-BIT 100 MB/S DUAL-SUPPLY LEVEL
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UQFN (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
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NLVSX5014MUTAG onsemi Description: 4-BIT 100 MB/S DUAL-SUPPLY LEVEL
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UQFN (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
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KA78R12CTU KA78R12CTU onsemi ka78r12ctu-d.pdf Description: IC REG LINEAR 12V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 12V
Control Features: Enable
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
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KA78R12CTSTU KA78R12CTSTU onsemi ka78r12ctu-d.pdf Description: IC REG LINEAR 12V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 12V
Control Features: Enable
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
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NSVMUN5214DW1T3G NSVMUN5214DW1T3G onsemi dtc114yd-d.pdf Description: TRANS NPN 50V DUAL BIPO SC88-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
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NSVMUN5214DW1T3G NSVMUN5214DW1T3G onsemi dtc114yd-d.pdf Description: TRANS NPN 50V DUAL BIPO SC88-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9725 шт:
термін постачання 21-31 дні (днів)
16+20.18 грн
26+11.81 грн
100+7.38 грн
500+5.09 грн
1000+4.50 грн
2000+4.00 грн
5000+3.40 грн
Мінімальне замовлення: 16
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MM74HCT00MTC MM74HCT00MTC onsemi mm74hct00-d.pdf Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4.8mA, 4.8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 23ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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2N5551YTA 2N5551YTA onsemi 2n5551t-d.pdf Description: TRANS NPN 160V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
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SB05-03C-TB-E SB05-03C-TB-E onsemi sb05-03c-d.pdf Description: DIODE SCHOTTKY 30V 500MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
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SB05-03C-TB-E SB05-03C-TB-E onsemi sb05-03c-d.pdf Description: DIODE SCHOTTKY 30V 500MA 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
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FOD2742BR2V FOD2742BR2V onsemi fod2742b-d.pdf Description: OPTOISO 2.5KV 1CH TRANS 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Number of Channels: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+51.53 грн
Мінімальне замовлення: 2500
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FOD2742BR2V FOD2742BR2V onsemi fod2742b-d.pdf Description: OPTOISO 2.5KV 1CH TRANS 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Number of Channels: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
3+124.98 грн
10+85.81 грн
100+65.08 грн
500+52.45 грн
1000+49.64 грн
Мінімальне замовлення: 3
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MMBF2202PT1 MMBF2202PT1 onsemi mmbf2202pt1-d.pdf Description: MOSFET P-CH 20V 0.3A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 5 V
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FOD8163TR2V FOD8163TR2V onsemi fod8163-d.pdf Description: SSO6 3.3V 10MB WL T&R VD
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 20ns, 10ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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FOD8163TR2V FOD8163TR2V onsemi fod8163-d.pdf Description: SSO6 3.3V 10MB WL T&R VD
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 20ns, 10ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 880 шт:
термін постачання 21-31 дні (днів)
2+216.57 грн
10+137.99 грн
100+102.01 грн
500+82.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FOD8163R2V FOD8163R2V onsemi fod8163-d.pdf Description: SSO6 3.3V 10MB T&R VDE
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 20ns, 10ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+86.69 грн
2000+79.90 грн
3000+78.12 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
FOD8163R2V FOD8163R2V onsemi fod8163-d.pdf Description: SSO6 3.3V 10MB T&R VDE
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 20ns, 10ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+216.57 грн
10+137.99 грн
100+102.01 грн
500+82.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
GBU8M GBU8M onsemi ONSM-S-A0003589389-1.pdf?t.download=true&u=5oefqw Description: BRIDGE RECT 1PHASE 1KV 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 448 шт:
термін постачання 21-31 дні (днів)
2+191.73 грн
20+83.87 грн
100+74.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LM7805ACT LM7805ACT onsemi MC7800%28A%2CAE%29%2CNCV7800.pdf Description: IC REG LINEAR 5V 1.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 5V
PSRR: 73dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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KSA928AOTA KSA928AOTA onsemi ksa928a-d.pdf Description: TRANS PNP 30V 2A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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KSA928AOTA KSA928AOTA onsemi ksa928a-d.pdf Description: TRANS PNP 30V 2A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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FM27C512Q120 FM27C512Q120 onsemi FM27C512.pdf Description: IC EPROM 512KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.600", 15.24mm) Window
Mounting Type: Through Hole
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - UV
Memory Format: EPROM
Supplier Device Package: 28-CDIP
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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NGTB40N60FL2WG NGTB40N60FL2WG onsemi NGTB40N60FL2WG.pdf Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 84ns/177ns
Switching Energy: 970µJ (on), 440µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 170 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 366 W
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1SMB45CAT3G 1SMB45CAT3G onsemi ONSMS21675-1.pdf?t.download=true&u=5oefqw Description: TVS DIODE 45VWM 72.2VC 425TEPBGA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.2V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 8875 шт:
термін постачання 21-31 дні (днів)
2959+7.36 грн
Мінімальне замовлення: 2959
В кошику  од. на суму  грн.
1SMB45CAT3 1SMB45CAT3 onsemi 1SMB10CAT3 Series.pdf Description: TVS DIODE 45VWM 72.2VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.2V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)
1902+11.78 грн
Мінімальне замовлення: 1902
В кошику  од. на суму  грн.
2N4124BU 2N4124BU onsemi 2N4124, MMBT4124.pdf Description: TRANS NPN 25V 0.2A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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NVMFS6H858NLWFT1G NVMFS6H858NLWFT1G onsemi nvmfs6h858nl-d.pdf Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
4+95.48 грн
10+57.93 грн
100+38.32 грн
500+28.05 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NVMFS5C468NWFT1G NVMFS5C468NWFT1G onsemi nvmfs5c468n-d.pdf Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2182500 шт:
термін постачання 21-31 дні (днів)
1500+43.32 грн
3000+38.70 грн
4500+37.80 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
NVMFS5C468NWFT1G NVMFS5C468NWFT1G onsemi nvmfs5c468n-d.pdf Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2183250 шт:
термін постачання 21-31 дні (днів)
3+145.16 грн
10+88.80 грн
100+60.05 грн
500+44.77 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FQB50N06TM FQB50N06TM onsemi FQI50N06-D.PDF Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 25 V
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FQB50N06TM FQB50N06TM onsemi FQI50N06-D.PDF Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 25 V
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FJE3303H2TU FJE3303H2TU onsemi fje3303-d.pdf Description: TRANS NPN 400V 1.5A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 20 W
на замовлення 865 шт:
термін постачання 21-31 дні (днів)
3+108.68 грн
60+47.75 грн
120+42.58 грн
540+31.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NCP5269AMNTWG onsemi ONSMS36892-1.pdf?t.download=true&u=5oefqw Description: NCP5269 - System Agent Controlle
Packaging: Bulk
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 28V
Operating Temperature: -40°C ~ 100°C (TA)
Applications: Converter, Battery Powered Devices
Supplier Device Package: 20-QFN (3x3)
на замовлення 222000 шт:
термін постачання 21-31 дні (днів)
720+29.28 грн
Мінімальне замовлення: 720
В кошику  од. на суму  грн.
XCP5201MNR2 onsemi Description: PWM DC TO DC CONTROLLER
Packaging: Bulk
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
259+85.41 грн
Мінімальне замовлення: 259
В кошику  од. на суму  грн.
NCP5201MNR2 NCP5201MNR2 onsemi ncp5201-d.pdf Description: IC REG CTRLR DDR 2OUT 18DFN
Packaging: Bulk
Package / Case: 18-VFDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 9.2V ~ 12V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, DDR
Supplier Device Package: 18-DFN (5x6)
на замовлення 4945 шт:
термін постачання 21-31 дні (днів)
430+51.54 грн
Мінімальне замовлення: 430
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NCP5203MNR2 NCP5203MNR2 onsemi ncp5203-d.pdf Description: IC REG CTRLR DDR 2OUT 18DFN
Packaging: Bulk
Package / Case: 18-VFDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, DDR
Supplier Device Package: 18-DFN (5x6)
на замовлення 4989 шт:
термін постачання 21-31 дні (днів)
430+51.54 грн
Мінімальне замовлення: 430
В кошику  од. на суму  грн.
NCP5208DR2 NCP5208DR2 onsemi ncp5208-d.pdf Description: IC REG CTRLR DDR 2OUT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 0.9V, 1.25V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 1.7V ~ 5.5V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, DDR
Supplier Device Package: 8-SOIC
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NCP5201MNR2G NCP5201MNR2G onsemi ncp5201-d.pdf Description: IC REG CTRLR DDR 2OUT 18DFN
Packaging: Bulk
Package / Case: 18-VFDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 9.2V ~ 12V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, DDR
Supplier Device Package: 18-DFN (5x6)
на замовлення 2435 шт:
термін постачання 21-31 дні (днів)
213+103.81 грн
Мінімальне замовлення: 213
В кошику  од. на суму  грн.
2SA1962RTU 2SA1962RTU onsemi fja4213-d.pdf Description: TRANS PNP 250V 17A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
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MMBFJ175 MMBFJ175 onsemi j175-d.pdf Description: JFET P-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
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MMBFJ175 MMBFJ175 onsemi j175-d.pdf Description: JFET P-CH 30V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
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CAT1320WI-28 CAT1320WI-28 onsemi CATSS00809-1.pdf?t.download=true&u=5oefqw Description: CAT1320 - SUPERVISORY CIRCUIT WI
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 2.85V, 3V
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
на замовлення 1839 шт:
термін постачання 21-31 дні (днів)
355+63.30 грн
Мінімальне замовлення: 355
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CAT1320WI-25-TE13 CAT1320WI-25-TE13 onsemi CATSS00809-1.pdf?t.download=true&u=5oefqw Description: CAT1320 - SUPERVISORY CIRCUIT WI
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 2.55V, 2.7V
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
317+70.75 грн
Мінімальне замовлення: 317
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IRLM110ATF IRLM110ATF onsemi IRLM110A.pdf Description: MOSFET N-CH 100V 1.5A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 750mA, 5V
Power Dissipation (Max): 2.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
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SZNUP2124MXWTAG SZNUP2124MXWTAG onsemi sznup2124-d.pdf Description: 28V CAN-FD ESD PROTECTION IN WDF
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 6pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: 3-XDFNW (1x1)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 120W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)
11+30.27 грн
14+21.68 грн
25+19.49 грн
100+9.98 грн
250+9.65 грн
500+8.65 грн
1000+6.54 грн
Мінімальне замовлення: 11
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SZNUP2115LT1G SZNUP2115LT1G onsemi nup2115l-d.pdf Description: TVS DIODE 24VWM 50VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 200W
Power Line Protection: No
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SZNUP2115LT1G SZNUP2115LT1G onsemi nup2115l-d.pdf Description: TVS DIODE 24VWM 50VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 2978 шт:
термін постачання 21-31 дні (днів)
8+43.47 грн
10+35.73 грн
100+24.85 грн
500+18.21 грн
1000+14.80 грн
Мінімальне замовлення: 8
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SZNUP2125WTT3G SZNUP2125WTT3G onsemi nup2125-d.pdf Description: TVS DIODE 24VWM 50VC SC703
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SC-70-3 (SOT323)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+8.38 грн
Мінімальне замовлення: 10000
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NVTYS029N08HLTWG nvtys029n08hl-d.pdf
NVTYS029N08HLTWG
Виробник: onsemi
Description: T8 80V N-CH LL IN LFPAK33 PACKAG
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2828 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.15 грн
10+56.51 грн
100+37.43 грн
500+27.44 грн
1000+24.96 грн
Мінімальне замовлення: 4
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NVTYS029N08HTWG nvtys029n08h-d.pdf
NVTYS029N08HTWG
Виробник: onsemi
Description: T8 80V N-CH SG IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.15 грн
10+56.51 грн
100+37.43 грн
500+27.44 грн
1000+24.96 грн
Мінімальне замовлення: 4
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NVMYS029N08LHTWG nvmys029n08lh-d.pdf
NVMYS029N08LHTWG
Виробник: onsemi
Description: T8 80V LL LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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NTLUS029N06T6TAG NTLUS029N06T6-D.pdf
NTLUS029N06T6TAG
Виробник: onsemi
Description: MOSFET N-CH 60V 3.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+19.92 грн
6000+18.17 грн
9000+16.82 грн
Мінімальне замовлення: 3000
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NTLUS029N06T6TAG NTLUS029N06T6-D.pdf
NTLUS029N06T6TAG
Виробник: onsemi
Description: MOSFET N-CH 60V 3.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 30 V
на замовлення 17970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+52.01 грн
10+43.73 грн
100+30.28 грн
500+23.75 грн
1000+20.21 грн
Мінімальне замовлення: 6
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FDS6699S ONSM-S-A0003585240-1.pdf?t.download=true&u=5oefqw
FDS6699S
Виробник: onsemi
Description: MOSFET N-CH 30V 21A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 21A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 15 V
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FDS6699S ONSM-S-A0003585240-1.pdf?t.download=true&u=5oefqw
FDS6699S
Виробник: onsemi
Description: MOSFET N-CH 30V 21A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 21A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 15 V
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FDMS3610S fdms3610s-d.pdf
FDMS3610S
Виробник: onsemi
Description: MOSFET 2N-CH 25V 17.5/30A PWR56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power56
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74AC05SCX 74AC05.pdf
74AC05SCX
Виробник: onsemi
Description: IC INVERTER OD 6CH 1IN 14SOIC
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 24mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
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FGH60N60SFDTU-F085 fgh60n60sf_f085-d.pdf
FGH60N60SFDTU-F085
Виробник: onsemi
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 26ns/134ns
Switching Energy: 1.97mJ (on), 570µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
Grade: Automotive
Qualification: AEC-Q101
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FGL40N120ANDTU fgl40n120and-d.pdf
FGL40N120ANDTU
Виробник: onsemi
Description: IGBT NPT 1200V 64A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
Supplier Device Package: TO-264-3
IGBT Type: NPT
Td (on/off) @ 25°C: 15ns/110ns
Switching Energy: 2.3mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
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FGL40N120ANTU FGL40N120AN.pdf
FGL40N120ANTU
Виробник: onsemi
Description: IGBT NPT 1200V 64A TO-264-3
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
Supplier Device Package: TO-264-3
IGBT Type: NPT
Td (on/off) @ 25°C: 15ns/110ns
Switching Energy: 2.3mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
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NLVSX5014MUTAG
Виробник: onsemi
Description: 4-BIT 100 MB/S DUAL-SUPPLY LEVEL
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UQFN (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
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NLVSX5014MUTAG
Виробник: onsemi
Description: 4-BIT 100 MB/S DUAL-SUPPLY LEVEL
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UQFN (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
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KA78R12CTU ka78r12ctu-d.pdf
KA78R12CTU
Виробник: onsemi
Description: IC REG LINEAR 12V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 12V
Control Features: Enable
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
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KA78R12CTSTU ka78r12ctu-d.pdf
KA78R12CTSTU
Виробник: onsemi
Description: IC REG LINEAR 12V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 12V
Control Features: Enable
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
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NSVMUN5214DW1T3G dtc114yd-d.pdf
NSVMUN5214DW1T3G
Виробник: onsemi
Description: TRANS NPN 50V DUAL BIPO SC88-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
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NSVMUN5214DW1T3G dtc114yd-d.pdf
NSVMUN5214DW1T3G
Виробник: onsemi
Description: TRANS NPN 50V DUAL BIPO SC88-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9725 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+20.18 грн
26+11.81 грн
100+7.38 грн
500+5.09 грн
1000+4.50 грн
2000+4.00 грн
5000+3.40 грн
Мінімальне замовлення: 16
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MM74HCT00MTC mm74hct00-d.pdf
MM74HCT00MTC
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4.8mA, 4.8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 23ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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2N5551YTA 2n5551t-d.pdf
2N5551YTA
Виробник: onsemi
Description: TRANS NPN 160V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
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SB05-03C-TB-E sb05-03c-d.pdf
SB05-03C-TB-E
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 500MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
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SB05-03C-TB-E sb05-03c-d.pdf
SB05-03C-TB-E
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 500MA 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
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FOD2742BR2V fod2742b-d.pdf
FOD2742BR2V
Виробник: onsemi
Description: OPTOISO 2.5KV 1CH TRANS 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Number of Channels: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+51.53 грн
Мінімальне замовлення: 2500
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FOD2742BR2V fod2742b-d.pdf
FOD2742BR2V
Виробник: onsemi
Description: OPTOISO 2.5KV 1CH TRANS 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Number of Channels: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.98 грн
10+85.81 грн
100+65.08 грн
500+52.45 грн
1000+49.64 грн
Мінімальне замовлення: 3
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MMBF2202PT1 mmbf2202pt1-d.pdf
MMBF2202PT1
Виробник: onsemi
Description: MOSFET P-CH 20V 0.3A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 5 V
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FOD8163TR2V fod8163-d.pdf
FOD8163TR2V
Виробник: onsemi
Description: SSO6 3.3V 10MB WL T&R VD
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 20ns, 10ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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FOD8163TR2V fod8163-d.pdf
FOD8163TR2V
Виробник: onsemi
Description: SSO6 3.3V 10MB WL T&R VD
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 20ns, 10ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 880 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+216.57 грн
10+137.99 грн
100+102.01 грн
500+82.43 грн
Мінімальне замовлення: 2
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FOD8163R2V fod8163-d.pdf
FOD8163R2V
Виробник: onsemi
Description: SSO6 3.3V 10MB T&R VDE
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 20ns, 10ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+86.69 грн
2000+79.90 грн
3000+78.12 грн
Мінімальне замовлення: 1000
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FOD8163R2V fod8163-d.pdf
FOD8163R2V
Виробник: onsemi
Description: SSO6 3.3V 10MB T&R VDE
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 20ns, 10ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+216.57 грн
10+137.99 грн
100+102.01 грн
500+82.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
GBU8M ONSM-S-A0003589389-1.pdf?t.download=true&u=5oefqw
GBU8M
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 1KV 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 448 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+191.73 грн
20+83.87 грн
100+74.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LM7805ACT MC7800%28A%2CAE%29%2CNCV7800.pdf
LM7805ACT
Виробник: onsemi
Description: IC REG LINEAR 5V 1.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 5V
PSRR: 73dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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KSA928AOTA ksa928a-d.pdf
KSA928AOTA
Виробник: onsemi
Description: TRANS PNP 30V 2A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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KSA928AOTA ksa928a-d.pdf
KSA928AOTA
Виробник: onsemi
Description: TRANS PNP 30V 2A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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FM27C512Q120 FM27C512.pdf
FM27C512Q120
Виробник: onsemi
Description: IC EPROM 512KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.600", 15.24mm) Window
Mounting Type: Through Hole
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - UV
Memory Format: EPROM
Supplier Device Package: 28-CDIP
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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NGTB40N60FL2WG NGTB40N60FL2WG.pdf
NGTB40N60FL2WG
Виробник: onsemi
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 84ns/177ns
Switching Energy: 970µJ (on), 440µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 170 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 366 W
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1SMB45CAT3G ONSMS21675-1.pdf?t.download=true&u=5oefqw
1SMB45CAT3G
Виробник: onsemi
Description: TVS DIODE 45VWM 72.2VC 425TEPBGA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.2V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 8875 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2959+7.36 грн
Мінімальне замовлення: 2959
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1SMB45CAT3 1SMB10CAT3 Series.pdf
1SMB45CAT3
Виробник: onsemi
Description: TVS DIODE 45VWM 72.2VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.2V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1902+11.78 грн
Мінімальне замовлення: 1902
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2N4124BU 2N4124, MMBT4124.pdf
2N4124BU
Виробник: onsemi
Description: TRANS NPN 25V 0.2A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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NVMFS6H858NLWFT1G nvmfs6h858nl-d.pdf
NVMFS6H858NLWFT1G
Виробник: onsemi
Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+95.48 грн
10+57.93 грн
100+38.32 грн
500+28.05 грн
Мінімальне замовлення: 4
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NVMFS5C468NWFT1G nvmfs5c468n-d.pdf
NVMFS5C468NWFT1G
Виробник: onsemi
Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2182500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+43.32 грн
3000+38.70 грн
4500+37.80 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
NVMFS5C468NWFT1G nvmfs5c468n-d.pdf
NVMFS5C468NWFT1G
Виробник: onsemi
Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2183250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+145.16 грн
10+88.80 грн
100+60.05 грн
500+44.77 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FQB50N06TM FQI50N06-D.PDF
FQB50N06TM
Виробник: onsemi
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 25 V
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FQB50N06TM FQI50N06-D.PDF
FQB50N06TM
Виробник: onsemi
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 25 V
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FJE3303H2TU fje3303-d.pdf
FJE3303H2TU
Виробник: onsemi
Description: TRANS NPN 400V 1.5A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 20 W
на замовлення 865 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+108.68 грн
60+47.75 грн
120+42.58 грн
540+31.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NCP5269AMNTWG ONSMS36892-1.pdf?t.download=true&u=5oefqw
Виробник: onsemi
Description: NCP5269 - System Agent Controlle
Packaging: Bulk
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 28V
Operating Temperature: -40°C ~ 100°C (TA)
Applications: Converter, Battery Powered Devices
Supplier Device Package: 20-QFN (3x3)
на замовлення 222000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
720+29.28 грн
Мінімальне замовлення: 720
В кошику  од. на суму  грн.
XCP5201MNR2
Виробник: onsemi
Description: PWM DC TO DC CONTROLLER
Packaging: Bulk
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
259+85.41 грн
Мінімальне замовлення: 259
В кошику  од. на суму  грн.
NCP5201MNR2 ncp5201-d.pdf
NCP5201MNR2
Виробник: onsemi
Description: IC REG CTRLR DDR 2OUT 18DFN
Packaging: Bulk
Package / Case: 18-VFDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 9.2V ~ 12V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, DDR
Supplier Device Package: 18-DFN (5x6)
на замовлення 4945 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
430+51.54 грн
Мінімальне замовлення: 430
В кошику  од. на суму  грн.
NCP5203MNR2 ncp5203-d.pdf
NCP5203MNR2
Виробник: onsemi
Description: IC REG CTRLR DDR 2OUT 18DFN
Packaging: Bulk
Package / Case: 18-VFDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, DDR
Supplier Device Package: 18-DFN (5x6)
на замовлення 4989 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
430+51.54 грн
Мінімальне замовлення: 430
В кошику  од. на суму  грн.
NCP5208DR2 ncp5208-d.pdf
NCP5208DR2
Виробник: onsemi
Description: IC REG CTRLR DDR 2OUT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 0.9V, 1.25V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 1.7V ~ 5.5V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, DDR
Supplier Device Package: 8-SOIC
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NCP5201MNR2G ncp5201-d.pdf
NCP5201MNR2G
Виробник: onsemi
Description: IC REG CTRLR DDR 2OUT 18DFN
Packaging: Bulk
Package / Case: 18-VFDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 9.2V ~ 12V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, DDR
Supplier Device Package: 18-DFN (5x6)
на замовлення 2435 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
213+103.81 грн
Мінімальне замовлення: 213
В кошику  од. на суму  грн.
2SA1962RTU fja4213-d.pdf
2SA1962RTU
Виробник: onsemi
Description: TRANS PNP 250V 17A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
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MMBFJ175 j175-d.pdf
MMBFJ175
Виробник: onsemi
Description: JFET P-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
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MMBFJ175 j175-d.pdf
MMBFJ175
Виробник: onsemi
Description: JFET P-CH 30V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
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CAT1320WI-28 CATSS00809-1.pdf?t.download=true&u=5oefqw
CAT1320WI-28
Виробник: onsemi
Description: CAT1320 - SUPERVISORY CIRCUIT WI
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 2.85V, 3V
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
на замовлення 1839 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
355+63.30 грн
Мінімальне замовлення: 355
В кошику  од. на суму  грн.
CAT1320WI-25-TE13 CATSS00809-1.pdf?t.download=true&u=5oefqw
CAT1320WI-25-TE13
Виробник: onsemi
Description: CAT1320 - SUPERVISORY CIRCUIT WI
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 2.55V, 2.7V
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
317+70.75 грн
Мінімальне замовлення: 317
В кошику  од. на суму  грн.
IRLM110ATF IRLM110A.pdf
IRLM110ATF
Виробник: onsemi
Description: MOSFET N-CH 100V 1.5A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 750mA, 5V
Power Dissipation (Max): 2.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
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SZNUP2124MXWTAG sznup2124-d.pdf
SZNUP2124MXWTAG
Виробник: onsemi
Description: 28V CAN-FD ESD PROTECTION IN WDF
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 6pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: 3-XDFNW (1x1)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 120W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.27 грн
14+21.68 грн
25+19.49 грн
100+9.98 грн
250+9.65 грн
500+8.65 грн
1000+6.54 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
SZNUP2115LT1G nup2115l-d.pdf
SZNUP2115LT1G
Виробник: onsemi
Description: TVS DIODE 24VWM 50VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 200W
Power Line Protection: No
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SZNUP2115LT1G nup2115l-d.pdf
SZNUP2115LT1G
Виробник: onsemi
Description: TVS DIODE 24VWM 50VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 2978 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+43.47 грн
10+35.73 грн
100+24.85 грн
500+18.21 грн
1000+14.80 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SZNUP2125WTT3G nup2125-d.pdf
SZNUP2125WTT3G
Виробник: onsemi
Description: TVS DIODE 24VWM 50VC SC703
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SC-70-3 (SOT323)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+8.38 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
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