| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| FSUSB42UMX | ONSEMI |
 Category: Analog multiplexers and switchesDescription: IC: analog switch; USB switch; Ch: 2; UMLP10; 2.4÷4.4VDC; OUT: DPDT Type of integrated circuit: analog switch Kind of integrated circuit: USB switch Number of channels: 2 Case: UMLP10 Supply voltage: 2.4...4.4V DC Mounting: SMD Operating temperature: -40...85°C Kind of output: DPDT |
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| FSUSB43L10X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; USB switch; Ch: 2; MicroPak10; 2.4÷4.4VDC; 1uA Type of integrated circuit: analog switch Kind of integrated circuit: USB switch Number of channels: 2 Case: MicroPak10 Supply voltage: 2.4...4.4V DC Mounting: SMD Operating temperature: -40...85°C Kind of output: DPDT Quiescent current: 1µA |
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| FSUSB63UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP12; OUT: DP3T Type of integrated circuit: analog switch Kind of integrated circuit: multiplexer; USB switch Number of channels: 2 Case: UMLP12 Supply voltage: 2.7...4.4V DC Mounting: SMD Operating temperature: -40...85°C Kind of output: DP3T |
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| FSUSB73UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP16; OUT: DP3T Type of integrated circuit: analog switch Kind of integrated circuit: multiplexer; USB switch Number of channels: 2 Case: UMLP16 Supply voltage: 2.5...4.4V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: DP3T |
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| FSUSB74MPX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; multiplexer,USB switch; Ch: 2; MLP16; reel,tape Type of integrated circuit: analog switch Kind of integrated circuit: multiplexer; USB switch Number of channels: 2 Case: MLP16 Supply voltage: 2.5...4.4V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: DP4T |
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| FSUSB242GEVB | ONSEMI |
Category: Development kits - Unclassified Description: FSUSB242GEVB |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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NCV78L05ABDR2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; ±5% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.7V Output voltage: 5V Output current: 0.1A Case: SO8 Mounting: SMD Manufacturer series: MC78L00A Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±5% Number of channels: 1 Application: automotive industry Input voltage: 7...20V |
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LM2903N | ONSEMI |
Category: THT comparators Description: IC: comparator; universal; Cmp: 2; 2÷36V; THT; DIP8; tube; 200nA Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 2 Mounting: THT Case: DIP8 Operating temperature: -40...105°C Input offset voltage: 15mV Kind of package: tube Input offset current: 200nA Operating voltage: 2...36V |
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FDMC7660 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 41W; PQFN8 Case: PQFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: PowerTrench® Kind of package: reel; tape Polarisation: unipolar Gate charge: 86nC On-state resistance: 3.3mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 40A Power dissipation: 41W |
на замовлення 2108 шт: термін постачання 21-30 дні (днів) |
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MMSZ5260BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode Mounting: SMD Kind of package: reel; tape Type of diode: Zener Semiconductor structure: single diode Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 43V Manufacturer series: MMSZ52xxB Case: SOD123 |
на замовлення 216 шт: термін постачання 21-30 дні (днів) |
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| MMBZ5260BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode Mounting: SMD Kind of package: reel; tape Type of diode: Zener Semiconductor structure: single diode Power dissipation: 0.3W Tolerance: ±5% Zener voltage: 43V Manufacturer series: MMBZ52xxBLT1G Case: SOT23 |
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| SZBZX84C3V3LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Application: automotive industry |
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| SZBZX84C3V3ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
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LM393M | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 150nA Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 2 Operating voltage: 2...36V Mounting: SMT Case: SO8 Operating temperature: 0...70°C Input offset voltage: 9mV Input offset current: 150nA Kind of package: tube Kind of output: open collector |
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NDS0610 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.12A; 0.36W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -120mA Power dissipation: 0.36W Case: SOT23 On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 675 шт: термін постачання 21-30 дні (днів) |
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FQP11N40C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.6A Power dissipation: 135W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement Technology: QFET® |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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FQPF11N40C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.6A Pulsed drain current: 42A Power dissipation: 44W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
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BUX85G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 1kV; 2A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 1kV Collector current: 2A Power dissipation: 40W Case: TO220AB Mounting: THT Frequency: 4MHz Kind of package: tube |
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MPSA56G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: bulk |
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PACDN042Y3R | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; SOT23; Ch: 2; reel,tape; ESD Number of channels: 2 Mounting: SMD Case: SOT23 Kind of package: reel; tape Version: ESD Semiconductor structure: unidirectional Type of diode: TVS array Max. off-state voltage: 5.5V Application: automotive industry |
на замовлення 492 шт: термін постачання 21-30 дні (днів) |
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FQP2N80 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.52A; Idm: 9.6A; 85W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 15nC On-state resistance: 6.3Ω Drain current: 1.52A Pulsed drain current: 9.6A Power dissipation: 85W Gate-source voltage: ±30V Drain-source voltage: 800V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
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FQPF2N80 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 15nC On-state resistance: 6.3Ω Drain current: 0.95A Pulsed drain current: 6A Power dissipation: 35W Gate-source voltage: ±30V Drain-source voltage: 800V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
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FQPF2N80YDTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 15nC On-state resistance: 6.3Ω Drain current: 0.95A Pulsed drain current: 6A Power dissipation: 35W Gate-source voltage: ±30V Drain-source voltage: 800V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
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FQD2N90TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK Polarisation: unipolar Gate charge: 15nC On-state resistance: 7.2Ω Drain current: 1.08A Pulsed drain current: 6.8A Gate-source voltage: ±30V Power dissipation: 50W Drain-source voltage: 900V Case: DPAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD |
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| FQU2N90TU-AM002 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Polarisation: unipolar Gate charge: 15nC On-state resistance: 7.2Ω Drain current: 1.08A Pulsed drain current: 6.8A Gate-source voltage: ±30V Power dissipation: 50W Drain-source voltage: 900V Case: IPAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
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| FQU2N90TU-WS | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Polarisation: unipolar Gate charge: 15nC On-state resistance: 7.2Ω Drain current: 1.08A Pulsed drain current: 6.8A Gate-source voltage: ±30V Power dissipation: 50W Drain-source voltage: 900V Case: IPAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
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В кошику од. на суму грн. | |||||||||||||
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FDP047AN08A0 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 310W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 71 шт: термін постачання 21-30 дні (днів) |
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MC33178DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 5MHz; Ch: 2; ±2÷18VDC,4÷36VDC; SO8; 4mV Mounting: SMT Operating temperature: -40...85°C Integrated circuit features: low power Input offset voltage: 4mV Voltage supply range: ± 2...18V DC; 4...36V DC Slew rate: 2V/μs Bandwidth: 5MHz Kind of package: reel; tape Case: SO8 Type of integrated circuit: operational amplifier Number of channels: dual; 2 |
на замовлення 1270 шт: термін постачання 21-30 дні (днів) |
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2N6488G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB Case: TO220AB Type of transistor: NPN Kind of package: tube Mounting: THT Collector current: 15A Current gain: 20...150 Power dissipation: 75W Collector-emitter voltage: 80V Frequency: 5MHz Polarisation: bipolar |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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2N6491G | ONSEMI |
 Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 80V; 15A; 75W; TO220AB Case: TO220AB Type of transistor: PNP Kind of package: tube Mounting: THT Collector current: 15A Current gain: 20...150 Power dissipation: 75W Collector-emitter voltage: 80V Frequency: 5MHz Polarisation: bipolar |
на замовлення 59 шт: термін постачання 21-30 дні (днів) |
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FJI5603DTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK Case: I2PAK Type of transistor: NPN Kind of package: tube Mounting: THT Collector current: 3A Current gain: 20...35 Power dissipation: 100W Collector-emitter voltage: 800V Frequency: 5MHz Polarisation: bipolar |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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MUR1520G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 200A; TO220-2; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 200A Kind of package: tube Max. load current: 30A Heatsink thickness: 1.14...1.39mm Reverse recovery time: 35ns |
на замовлення 103 шт: термін постачання 21-30 дні (днів) |
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1SMB5919BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 5.6V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 6143 шт: термін постачання 21-30 дні (днів) |
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| SZ1SMB5919BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 5.6V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FDWS86368-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 214W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 80A Power dissipation: 214W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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FQP6N80C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Power dissipation: 158W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
на замовлення 146 шт: термін постачання 21-30 дні (днів) |
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FQPF6N80T | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.1A; Idm: 13.2A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.1A Pulsed drain current: 13.2A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.95Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||
| FCP099N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 37A Power dissipation: 357W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 111A Gate charge: 88nC |
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В кошику од. на суму грн. | |||||||||||||
| NTHL099N60S5 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Power dissipation: 184W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 95A Gate charge: 48nC |
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В кошику од. на суму грн. | |||||||||||||
| FCMT199N60 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 208W Case: Power88 Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 60.6A Gate charge: 57nC |
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| FCMT299N60 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.9A Power dissipation: 125W Case: Power88 Gate-source voltage: ±20V On-state resistance: 0.299Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 36A Gate charge: 51nC |
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| FDBL0210N80 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 240A Power dissipation: 357W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 130nC |
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| FAN7388MX | ONSEMI |
Category: Buffers, transceivers, drivers Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V Kind of package: reel; tape Kind of channel: enhancement Case: SO20 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Operating temperature: -40...150°C Output current: 350...650mA Supply voltage: 10...20V |
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В кошику од. на суму грн. | |||||||||||||
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MJ15023G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3 Kind of package: in-tray Mounting: THT Type of transistor: PNP Case: TO3 Collector current: 16A Collector-emitter voltage: 200V Power dissipation: 250W Frequency: 4MHz Polarisation: bipolar |
на замовлення 42 шт: термін постачання 21-30 дні (днів) |
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| BZX84C12 | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C |
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| SZBZX84C12LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||
| SZBZX84C12ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
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MC10H125PG | ONSEMI |
Category: Level translators Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4 Mounting: THT Operating temperature: 0...75°C Number of outputs: 4 Number of channels: 4 Number of inputs: 8 Kind of package: tube Manufacturer series: 10H Case: DIP16 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting |
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MC10H124FNG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20 Mounting: SMD Operating temperature: 0...75°C Number of outputs: 8 Number of channels: 4 Number of inputs: 5 Kind of package: tube Manufacturer series: 10H Case: PLCC20 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
MC10H124FNR2G | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20 Mounting: SMD Operating temperature: 0...75°C Number of outputs: 8 Number of channels: 4 Number of inputs: 5 Kind of package: reel; tape Manufacturer series: 10H Case: PLCC20 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
MC10H125FNG | ONSEMI |
Category: Level translators Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4 Mounting: SMD Operating temperature: 0...75°C Number of outputs: 4 Number of channels: 4 Number of inputs: 8 Kind of package: tube Manufacturer series: 10H Case: PLCC20 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
MC10H125FNR2G | ONSEMI |
Category: Level translators Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4 Mounting: SMD Operating temperature: 0...75°C Number of outputs: 4 Number of channels: 4 Number of inputs: 8 Kind of package: reel; tape Manufacturer series: 10H Case: PLCC20 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| NSVR201MXT5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape Type of diode: Schottky switching Case: X2DFN2 Mounting: SMD Max. off-state voltage: 2V Load current: 50mA Semiconductor structure: single diode Max. forward voltage: 0.32V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CAV24C32WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NVMYS011N04CTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 173A; 9.1W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Pulsed drain current: 173A Power dissipation: 9.1W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FGY100T65SCDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3 Mounting: THT Type of transistor: IGBT Case: TO247-3 Gate charge: 157nC Power dissipation: 375W Gate-emitter voltage: ±25V Collector current: 100A Pulsed collector current: 300A Collector-emitter voltage: 650V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FDMS8025S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Case: Power56 Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 47nC On-state resistance: 4mΩ Power dissipation: 50W Drain current: 49A Drain-source voltage: 30V Pulsed drain current: 100A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FCH070N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: THT Gate charge: 128nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 156A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FCH170N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 227W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 66A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FCP170N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 66A; 227W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 227W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 66A |
товару немає в наявності |
В кошику од. на суму грн. |
| FSUSB42UMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; UMLP10; 2.4÷4.4VDC; OUT: DPDT
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: UMLP10
Supply voltage: 2.4...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; UMLP10; 2.4÷4.4VDC; OUT: DPDT
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: UMLP10
Supply voltage: 2.4...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
товару немає в наявності
В кошику
од. на суму грн.
| FSUSB43L10X |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MicroPak10; 2.4÷4.4VDC; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: MicroPak10
Supply voltage: 2.4...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MicroPak10; 2.4÷4.4VDC; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: MicroPak10
Supply voltage: 2.4...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
товару немає в наявності
В кошику
од. на суму грн.
| FSUSB63UMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP12; OUT: DP3T
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: UMLP12
Supply voltage: 2.7...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DP3T
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP12; OUT: DP3T
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: UMLP12
Supply voltage: 2.7...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DP3T
товару немає в наявності
В кошику
од. на суму грн.
| FSUSB73UMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP16; OUT: DP3T
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: UMLP16
Supply voltage: 2.5...4.4V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DP3T
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP16; OUT: DP3T
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: UMLP16
Supply voltage: 2.5...4.4V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DP3T
товару немає в наявності
В кошику
од. на суму грн.
| FSUSB74MPX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; MLP16; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: MLP16
Supply voltage: 2.5...4.4V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DP4T
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; MLP16; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: MLP16
Supply voltage: 2.5...4.4V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DP4T
товару немає в наявності
В кошику
од. на суму грн.
| FSUSB242GEVB |
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9807.02 грн |
| NCV78L05ABDR2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Manufacturer series: MC78L00A
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Application: automotive industry
Input voltage: 7...20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Manufacturer series: MC78L00A
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Application: automotive industry
Input voltage: 7...20V
товару немає в наявності
В кошику
од. на суму грн.
| LM2903N |
|
Виробник: ONSEMI
Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; THT; DIP8; tube; 200nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: THT
Case: DIP8
Operating temperature: -40...105°C
Input offset voltage: 15mV
Kind of package: tube
Input offset current: 200nA
Operating voltage: 2...36V
Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; THT; DIP8; tube; 200nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: THT
Case: DIP8
Operating temperature: -40...105°C
Input offset voltage: 15mV
Kind of package: tube
Input offset current: 200nA
Operating voltage: 2...36V
товару немає в наявності
В кошику
од. на суму грн.
| FDMC7660 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 41W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 41W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 41W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 41W
на замовлення 2108 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 70.10 грн |
| MMSZ5260BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 43V
Manufacturer series: MMSZ52xxB
Case: SOD123
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 43V
Manufacturer series: MMSZ52xxB
Case: SOD123
на замовлення 216 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.10 грн |
| 162+ | 2.55 грн |
| 205+ | 2.01 грн |
| MMBZ5260BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 43V
Manufacturer series: MMBZ52xxBLT1G
Case: SOT23
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 43V
Manufacturer series: MMBZ52xxBLT1G
Case: SOT23
товару немає в наявності
В кошику
од. на суму грн.
| SZBZX84C3V3LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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В кошику
од. на суму грн.
| SZBZX84C3V3ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| LM393M |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Input offset current: 150nA
Kind of package: tube
Kind of output: open collector
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Input offset current: 150nA
Kind of package: tube
Kind of output: open collector
товару немає в наявності
В кошику
од. на суму грн.
| NDS0610 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.12A; 0.36W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120mA
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.12A; 0.36W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120mA
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 675 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.42 грн |
| 46+ | 9.15 грн |
| 55+ | 7.50 грн |
| 100+ | 6.86 грн |
| 500+ | 5.59 грн |
| FQP11N40C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 148.19 грн |
| 4+ | 127.72 грн |
| 10+ | 116.18 грн |
| 50+ | 103.00 грн |
| FQPF11N40C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Pulsed drain current: 42A
Power dissipation: 44W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Pulsed drain current: 42A
Power dissipation: 44W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| BUX85G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1kV; 2A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 1kV
Collector current: 2A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Frequency: 4MHz
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1kV; 2A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 1kV
Collector current: 2A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Frequency: 4MHz
Kind of package: tube
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од. на суму грн.
| MPSA56G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| PACDN042Y3R |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT23; Ch: 2; reel,tape; ESD
Number of channels: 2
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Version: ESD
Semiconductor structure: unidirectional
Type of diode: TVS array
Max. off-state voltage: 5.5V
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT23; Ch: 2; reel,tape; ESD
Number of channels: 2
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Version: ESD
Semiconductor structure: unidirectional
Type of diode: TVS array
Max. off-state voltage: 5.5V
Application: automotive industry
на замовлення 492 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.85 грн |
| 25+ | 16.64 грн |
| 31+ | 13.60 грн |
| 100+ | 9.72 грн |
| FQP2N80 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.52A; Idm: 9.6A; 85W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 6.3Ω
Drain current: 1.52A
Pulsed drain current: 9.6A
Power dissipation: 85W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.52A; Idm: 9.6A; 85W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 6.3Ω
Drain current: 1.52A
Pulsed drain current: 9.6A
Power dissipation: 85W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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| FQPF2N80 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 6.3Ω
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 6.3Ω
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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| FQPF2N80YDTU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 6.3Ω
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 6.3Ω
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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| FQD2N90TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
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| FQU2N90TU-AM002 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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| FQU2N90TU-WS |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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| FDP047AN08A0 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 71 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 257.33 грн |
| 10+ | 181.27 грн |
| 50+ | 149.14 грн |
| MC33178DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; ±2÷18VDC,4÷36VDC; SO8; 4mV
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; ±2÷18VDC,4÷36VDC; SO8; 4mV
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
на замовлення 1270 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.28 грн |
| 21+ | 20.35 грн |
| 25+ | 18.21 грн |
| 100+ | 15.33 грн |
| 250+ | 13.76 грн |
| 500+ | 13.18 грн |
| 2N6488G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 15A
Current gain: 20...150
Power dissipation: 75W
Collector-emitter voltage: 80V
Frequency: 5MHz
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 15A
Current gain: 20...150
Power dissipation: 75W
Collector-emitter voltage: 80V
Frequency: 5MHz
Polarisation: bipolar
на замовлення 88 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.89 грн |
| 10+ | 45.73 грн |
| 50+ | 38.40 грн |
| 2N6491G | |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 15A; 75W; TO220AB
Case: TO220AB
Type of transistor: PNP
Kind of package: tube
Mounting: THT
Collector current: 15A
Current gain: 20...150
Power dissipation: 75W
Collector-emitter voltage: 80V
Frequency: 5MHz
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 15A; 75W; TO220AB
Case: TO220AB
Type of transistor: PNP
Kind of package: tube
Mounting: THT
Collector current: 15A
Current gain: 20...150
Power dissipation: 75W
Collector-emitter voltage: 80V
Frequency: 5MHz
Polarisation: bipolar
на замовлення 59 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 93.17 грн |
| 7+ | 60.64 грн |
| 10+ | 52.07 грн |
| 50+ | 38.23 грн |
| FJI5603DTU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK
Case: I2PAK
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 3A
Current gain: 20...35
Power dissipation: 100W
Collector-emitter voltage: 800V
Frequency: 5MHz
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK
Case: I2PAK
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 3A
Current gain: 20...35
Power dissipation: 100W
Collector-emitter voltage: 800V
Frequency: 5MHz
Polarisation: bipolar
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 103.82 грн |
| 10+ | 85.69 грн |
| MUR1520G | |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 200A; TO220-2; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 200A; TO220-2; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
на замовлення 103 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.48 грн |
| 100+ | 40.21 грн |
| 1SMB5919BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 6143 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.18 грн |
| 26+ | 16.31 грн |
| 30+ | 14.01 грн |
| 50+ | 9.56 грн |
| 100+ | 8.16 грн |
| 500+ | 6.43 грн |
| SZ1SMB5919BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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| FDWS86368-F085 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 214W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 214W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 214W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 214W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FQP6N80C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 146 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.62 грн |
| 10+ | 117.83 грн |
| 50+ | 99.70 грн |
| FQPF6N80T |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.1A; Idm: 13.2A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.1A
Pulsed drain current: 13.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.1A; Idm: 13.2A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.1A
Pulsed drain current: 13.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
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| FCP099N60E |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 111A
Gate charge: 88nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 111A
Gate charge: 88nC
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| NTHL099N60S5 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 184W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Gate charge: 48nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 184W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Gate charge: 48nC
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| FCMT199N60 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
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| FCMT299N60 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
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| FDBL0210N80 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
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| FAN7388MX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V
Kind of package: reel; tape
Kind of channel: enhancement
Case: SO20
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Operating temperature: -40...150°C
Output current: 350...650mA
Supply voltage: 10...20V
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V
Kind of package: reel; tape
Kind of channel: enhancement
Case: SO20
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Operating temperature: -40...150°C
Output current: 350...650mA
Supply voltage: 10...20V
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| MJ15023G | |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3
Kind of package: in-tray
Mounting: THT
Type of transistor: PNP
Case: TO3
Collector current: 16A
Collector-emitter voltage: 200V
Power dissipation: 250W
Frequency: 4MHz
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3
Kind of package: in-tray
Mounting: THT
Type of transistor: PNP
Case: TO3
Collector current: 16A
Collector-emitter voltage: 200V
Power dissipation: 250W
Frequency: 4MHz
Polarisation: bipolar
на замовлення 42 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 451.66 грн |
| 5+ | 389.74 грн |
| 10+ | 374.91 грн |
| BZX84C12 |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
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| SZBZX84C12LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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| SZBZX84C12ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| MC10H125PG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: THT
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: tube
Manufacturer series: 10H
Case: DIP16
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: THT
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: tube
Manufacturer series: 10H
Case: DIP16
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
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| MC10H124FNG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 8
Number of channels: 4
Number of inputs: 5
Kind of package: tube
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 8
Number of channels: 4
Number of inputs: 5
Kind of package: tube
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
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| MC10H124FNR2G |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 8
Number of channels: 4
Number of inputs: 5
Kind of package: reel; tape
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 8
Number of channels: 4
Number of inputs: 5
Kind of package: reel; tape
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
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| MC10H125FNG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: tube
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: tube
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
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| MC10H125FNR2G |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: reel; tape
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: reel; tape
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
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| NSVR201MXT5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Type of diode: Schottky switching
Case: X2DFN2
Mounting: SMD
Max. off-state voltage: 2V
Load current: 50mA
Semiconductor structure: single diode
Max. forward voltage: 0.32V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Type of diode: Schottky switching
Case: X2DFN2
Mounting: SMD
Max. off-state voltage: 2V
Load current: 50mA
Semiconductor structure: single diode
Max. forward voltage: 0.32V
Kind of package: reel; tape
Application: automotive industry
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| CAV24C32WE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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| NVMYS011N04CTWG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 173A; 9.1W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 173A
Power dissipation: 9.1W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 173A; 9.1W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 173A
Power dissipation: 9.1W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FGY100T65SCDT |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Gate charge: 157nC
Power dissipation: 375W
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Gate charge: 157nC
Power dissipation: 375W
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Kind of package: tube
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| FDMS8025S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power56
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 47nC
On-state resistance: 4mΩ
Power dissipation: 50W
Drain current: 49A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power56
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 47nC
On-state resistance: 4mΩ
Power dissipation: 50W
Drain current: 49A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: reel; tape
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| FCH070N60E |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 156A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 156A
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| FCH170N60 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
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| FCP170N60 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 66A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 66A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
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