| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MOC217M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8 Kind of output: transistor Case: SO8 Mounting: SMD Type of optocoupler: optocoupler Turn-on time: 7.5µs Turn-off time: 5.7µs Number of channels: 1 Max. off-state voltage: 6V CTR@If: 100%@1mA Insulation voltage: 2.5kV |
на замовлення 1461 шт: термін постачання 21-30 дні (днів) |
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| MJD340RLG | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 0.5A Power dissipation: 15W Current gain: 30...240 Collector-emitter voltage: 300V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZMMSZ5246BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMSZ5246ET1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZMMSZ5246ET1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxE Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDN359AN | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.7A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® Gate charge: 7nC Features of semiconductor devices: logic level |
на замовлення 455 шт: термін постачання 21-30 дні (днів) |
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| FDN359BN | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.7A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTTFS2D1N04HLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 958A; 83W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 958A Power dissipation: 83W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: SMD Gate charge: 43.6nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMSZ5247BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 17V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 5611 шт: термін постачання 21-30 дні (днів) |
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MMSZ5244BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 14V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 14V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 600 шт: термін постачання 21-30 дні (днів) |
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MMSZ5222BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 2.5V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.5V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 2026 шт: термін постачання 21-30 дні (днів) |
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MMSZ5260BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 226 шт: термін постачання 21-30 дні (днів) |
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MMSZ5229BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 4374 шт: термін постачання 21-30 дні (днів) |
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MMSZ5233BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 6V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 2120 шт: термін постачання 21-30 дні (днів) |
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MMSZ5255BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 28V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 28V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 3295 шт: термін постачання 21-30 дні (днів) |
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| NDP6060 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 48A Power dissipation: 100W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 25µΩ Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 144A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NDP6060L | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 48A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 40mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SK932-24-TB-E | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 14.5mA Power dissipation: 0.2W Case: SOT23 Gate-source voltage: -15V Mounting: SMD Gate current: 10mA Kind of package: reel; tape |
на замовлення 2950 шт: термін постачання 21-30 дні (днів) |
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2SK932-23-TB-E | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 10mA Power dissipation: 0.2W Case: SOT23 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FDMS86183 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 32A; Idm: 187A; 63W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 32A Pulsed drain current: 187A Power dissipation: 63W Case: Power56 Gate-source voltage: ±20V On-state resistance: 34.6mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NC7ST08P5X-L22057 | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 4.5÷5.5VDC; -48÷85°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Mounting: SMD Case: SC88A Supply voltage: 4.5...5.5V DC Number of inputs: 2 Kind of package: reel; tape Operating temperature: -48...85°C |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| FSA2380BQX | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; Ch: 2; DQFN14; 2.7÷5VDC; reel,tape; OUT: DP3T Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 500nA Number of channels: 2 Supply voltage: 2.7...5V DC Case: DQFN14 Type of integrated circuit: analog switch Kind of output: DP3T |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDMB3800N | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 4.8A; Idm: 9A; 1.6W Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 5.6nC On-state resistance: 61mΩ Power dissipation: 1.6W Drain current: 4.8A Pulsed drain current: 9A Gate-source voltage: ±20V Drain-source voltage: 30V Case: MicroFET Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ES1A | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A Mounting: SMD Capacitance: 7pF Reverse recovery time: 15ns Leakage current: 0.1mA Load current: 1A Power dissipation: 1.47W Max. forward voltage: 0.92V Max. forward impulse current: 30A Max. off-state voltage: 50V Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Features of semiconductor devices: fast switching Type of diode: rectifying |
на замовлення 3122 шт: термін постачання 21-30 дні (днів) |
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FGY75T120SQDN | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 395W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 399nC Kind of package: tube |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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| FDP047N08 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 164A; Idm: 656A; 268W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 164A Pulsed drain current: 656A Power dissipation: 268W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: THT Gate charge: 117nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BSP50 | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 45V; 0.8A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NTB7D3N15MC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 488A; 166W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 53nC On-state resistance: 7.3mΩ Drain current: 101A Pulsed drain current: 488A Gate-source voltage: ±20V Power dissipation: 166W Drain-source voltage: 150V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC33178DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 5MHz; Ch: 2; SO8; ±2÷18VDC,4÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 5MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 2V/μs Operating temperature: -40...85°C Input offset voltage: 4mV Voltage supply range: ± 2...18V DC; 4...36V DC Integrated circuit features: low power Kind of package: reel; tape |
на замовлення 1398 шт: термін постачання 21-30 дні (днів) |
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MC33179DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 4mV Number of channels: 4 Voltage supply range: ± 2...18V DC; 4...36V DC Slew rate: 2V/μs Bandwidth: 5MHz Kind of package: reel; tape Case: SO14 Type of integrated circuit: operational amplifier |
на замовлення 2625 шт: термін постачання 21-30 дні (днів) |
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| NRVUB1660CTT4G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 8Ax2; 60ns; D2PAK; Ufmax: 1.5V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A x2 Reverse recovery time: 60ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 1.5V Max. load current: 16A Max. forward impulse current: 100A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP1654BD65R2G | ONSEMI |
Category: Drivers - integrated circuitsDescription: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost Type of integrated circuit: PMIC Output current: -1.5...1.5A Case: SO8 Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Operating voltage: 9...20V DC Topology: boost |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1654BD200R2G | ONSEMI |
Category: Drivers - integrated circuitsDescription: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost Type of integrated circuit: PMIC Output current: -1.5...1.5A Mounting: SMD Operating voltage: 9...20V DC Number of channels: 1 Operating temperature: -40...125°C Case: SO8 Topology: boost |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMSD4448 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 2A Leakage current: 5µA Power dissipation: 0.4W |
на замовлення 3862 шт: термін постачання 21-30 дні (днів) |
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| NCV4294CSN50T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.03A; TSOP5; SMD Mounting: SMD Kind of package: reel; tape Number of channels: 1 Output voltage: 5V Application: automotive industry Kind of voltage regulator: fixed; LDO; linear Case: TSOP5 Type of integrated circuit: voltage regulator Output current: 30mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDL100N50F | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264 Mounting: THT Gate-source voltage: ±30V Drain current: 100A Power dissipation: 2.5kW Drain-source voltage: 500V Gate charge: 238nC Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Technology: UniFET™ Polarisation: unipolar Case: TO264 On-state resistance: 55mΩ |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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MUN5311DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Current gain: 60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
на замовлення 948 шт: термін постачання 21-30 дні (днів) |
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MUN5314DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.187W Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT; complementary pair Type of transistor: NPN / PNP |
на замовлення 2503 шт: термін постачання 21-30 дні (днів) |
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MUN5313DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 22kΩ |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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SMUN5311DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
на замовлення 2493 шт: термін постачання 21-30 дні (днів) |
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SMUN5314DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
на замовлення 370 шт: термін постачання 21-30 дні (днів) |
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MUN5312DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Current gain: 100 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MUN5315DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Current gain: 160...350 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MUN5316DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Current gain: 160...350 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMUN5311DW1T2G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMUN5311DW1T3G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMUN5313DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMUN5313DW1T3G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SMUN5315DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Current gain: 160...350 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVMUN5312DW1T2G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Current gain: 60...100 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVMUN531335DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Current gain: 80...140 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 2.2/47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVMUN5316DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Current gain: 160...350 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 4.7kΩ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDMS86350 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 130A; 156W; PQFN8 Kind of package: reel; tape Case: PQFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET On-state resistance: 3.8mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 130A Power dissipation: 156W Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVD5C632NLT4G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 155A; Idm: 900A; 58W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 155A Pulsed drain current: 900A Power dissipation: 58W Case: DPAK Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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74LCX245MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...3.6V DC Kind of package: reel; tape Quiescent current: 10µA |
на замовлення 2031 шт: термін постачання 21-30 дні (днів) |
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74LCX07MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 6; SMD; TSSOP14; LCX Manufacturer series: LCX Kind of output: open drain Case: TSSOP14 Mounting: SMD Kind of integrated circuit: buffer; non-inverting Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Number of channels: 6 Type of integrated circuit: digital |
на замовлення 931 шт: термін постачання 21-30 дні (днів) |
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74LCX14MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of gate: NOT Quiescent current: 10µA Number of inputs: 1 Family: LCX |
на замовлення 1843 шт: термін постачання 21-30 дні (днів) |
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74LCX00MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; LCX Type of integrated circuit: digital Number of channels: quad; 4 Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Kind of package: reel; tape Kind of gate: NAND Number of inputs: 2 Family: LCX |
на замовлення 2490 шт: термін постачання 21-30 дні (днів) |
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74LCX08MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Number of channels: quad; 4 Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Kind of package: reel; tape Kind of gate: AND Quiescent current: 10µA Number of inputs: 2 Family: LCX |
на замовлення 1447 шт: термін постачання 21-30 дні (днів) |
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74LCX06MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Kind of package: reel; tape Kind of output: open drain Kind of gate: NOT Quiescent current: 10µA Number of inputs: 1 Family: LCX |
на замовлення 1927 шт: термін постачання 21-30 дні (днів) |
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| MOC217M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100%@1mA
Insulation voltage: 2.5kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100%@1mA
Insulation voltage: 2.5kV
на замовлення 1461 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 54.83 грн |
| 14+ | 28.64 грн |
| 25+ | 24.82 грн |
| 100+ | 22.91 грн |
| MJD340RLG |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
товару немає в наявності
В кошику
од. на суму грн.
| SZMMSZ5246BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5246ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
товару немає в наявності
В кошику
од. на суму грн.
| SZMMSZ5246ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| FDN359AN |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Gate charge: 7nC
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Gate charge: 7nC
Features of semiconductor devices: logic level
на замовлення 455 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.26 грн |
| 14+ | 28.96 грн |
| 50+ | 21.88 грн |
| 71+ | 13.36 грн |
| 193+ | 12.65 грн |
| FDN359BN |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NTTFS2D1N04HLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 958A; 83W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 958A
Power dissipation: 83W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 43.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 958A; 83W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 958A
Power dissipation: 83W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 43.6nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5247BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 5611 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 66+ | 6.55 грн |
| 103+ | 3.90 грн |
| 158+ | 2.53 грн |
| 192+ | 2.08 грн |
| 500+ | 1.62 грн |
| 598+ | 1.57 грн |
| 1000+ | 1.51 грн |
| 1642+ | 1.48 грн |
| 3000+ | 1.46 грн |
| MMSZ5244BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 59+ | 7.37 грн |
| 87+ | 4.61 грн |
| 120+ | 3.33 грн |
| 140+ | 2.85 грн |
| 250+ | 2.32 грн |
| 500+ | 1.97 грн |
| MMSZ5222BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 2026 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.57 грн |
| 69+ | 5.81 грн |
| 79+ | 5.09 грн |
| 94+ | 4.25 грн |
| 108+ | 3.69 грн |
| 401+ | 2.33 грн |
| 1000+ | 2.29 грн |
| 1103+ | 2.20 грн |
| 1500+ | 2.12 грн |
| MMSZ5260BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 226 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.71 грн |
| 143+ | 2.78 грн |
| 184+ | 2.17 грн |
| MMSZ5229BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 4374 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 59+ | 7.31 грн |
| 88+ | 4.53 грн |
| 108+ | 3.69 грн |
| 151+ | 2.64 грн |
| 200+ | 2.23 грн |
| 500+ | 1.77 грн |
| 1000+ | 1.65 грн |
| MMSZ5233BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 2120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.42 грн |
| 76+ | 5.25 грн |
| 128+ | 3.11 грн |
| 500+ | 2.22 грн |
| 546+ | 1.71 грн |
| 1502+ | 1.61 грн |
| MMSZ5255BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 28V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 28V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 28V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 28V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 3295 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 61+ | 7.04 грн |
| 80+ | 5.01 грн |
| 100+ | 4.26 грн |
| 250+ | 2.20 грн |
| 500+ | 1.86 грн |
| 598+ | 1.57 грн |
| 1642+ | 1.48 грн |
| NDP6060 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 25µΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 144A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 25µΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 144A
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| NDP6060L |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| 2SK932-24-TB-E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 14.5mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 14.5mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
на замовлення 2950 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.54 грн |
| 15+ | 28.00 грн |
| 25+ | 25.14 грн |
| 47+ | 20.05 грн |
| 129+ | 18.93 грн |
| 2SK932-23-TB-E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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| FDMS86183 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; Idm: 187A; 63W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Pulsed drain current: 187A
Power dissipation: 63W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 34.6mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; Idm: 187A; 63W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Pulsed drain current: 187A
Power dissipation: 63W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 34.6mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NC7ST08P5X-L22057 |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 4.5÷5.5VDC; -48÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Mounting: SMD
Case: SC88A
Supply voltage: 4.5...5.5V DC
Number of inputs: 2
Kind of package: reel; tape
Operating temperature: -48...85°C
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 4.5÷5.5VDC; -48÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Mounting: SMD
Case: SC88A
Supply voltage: 4.5...5.5V DC
Number of inputs: 2
Kind of package: reel; tape
Operating temperature: -48...85°C
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 13.79 грн |
| 60+ | 7.88 грн |
| 100+ | 6.68 грн |
| 500+ | 5.81 грн |
| 3000+ | 5.41 грн |
| FSA2380BQX |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; DQFN14; 2.7÷5VDC; reel,tape; OUT: DP3T
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 500nA
Number of channels: 2
Supply voltage: 2.7...5V DC
Case: DQFN14
Type of integrated circuit: analog switch
Kind of output: DP3T
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; DQFN14; 2.7÷5VDC; reel,tape; OUT: DP3T
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 500nA
Number of channels: 2
Supply voltage: 2.7...5V DC
Case: DQFN14
Type of integrated circuit: analog switch
Kind of output: DP3T
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| FDMB3800N |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.8A; Idm: 9A; 1.6W
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 5.6nC
On-state resistance: 61mΩ
Power dissipation: 1.6W
Drain current: 4.8A
Pulsed drain current: 9A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: MicroFET
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.8A; Idm: 9A; 1.6W
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 5.6nC
On-state resistance: 61mΩ
Power dissipation: 1.6W
Drain current: 4.8A
Pulsed drain current: 9A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: MicroFET
Kind of package: reel; tape
Kind of channel: enhancement
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| ES1A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Reverse recovery time: 15ns
Leakage current: 0.1mA
Load current: 1A
Power dissipation: 1.47W
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Reverse recovery time: 15ns
Leakage current: 0.1mA
Load current: 1A
Power dissipation: 1.47W
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
на замовлення 3122 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.13 грн |
| 29+ | 14.16 грн |
| 50+ | 11.38 грн |
| 100+ | 10.34 грн |
| 109+ | 8.59 грн |
| 299+ | 8.11 грн |
| 500+ | 8.03 грн |
| 1000+ | 7.80 грн |
| FGY75T120SQDN |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 867.82 грн |
| 2+ | 731.85 грн |
| 4+ | 692.08 грн |
| FDP047N08 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 164A; Idm: 656A; 268W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 268W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 164A; Idm: 656A; 268W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 268W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
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| BSP50 | ![]() |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
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| NTB7D3N15MC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 488A; 166W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 7.3mΩ
Drain current: 101A
Pulsed drain current: 488A
Gate-source voltage: ±20V
Power dissipation: 166W
Drain-source voltage: 150V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 488A; 166W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 7.3mΩ
Drain current: 101A
Pulsed drain current: 488A
Gate-source voltage: ±20V
Power dissipation: 166W
Drain-source voltage: 150V
Kind of channel: enhancement
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| MC33178DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; SO8; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Integrated circuit features: low power
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; SO8; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Integrated circuit features: low power
Kind of package: reel; tape
на замовлення 1398 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.27 грн |
| 22+ | 18.77 грн |
| 25+ | 16.63 грн |
| 100+ | 14.32 грн |
| 250+ | 13.21 грн |
| 500+ | 12.73 грн |
| MC33179DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 4mV
Number of channels: 4
Voltage supply range: ± 2...18V DC; 4...36V DC
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 4mV
Number of channels: 4
Voltage supply range: ± 2...18V DC; 4...36V DC
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
на замовлення 2625 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 47.97 грн |
| 11+ | 37.39 грн |
| 12+ | 33.57 грн |
| 25+ | 29.27 грн |
| 42+ | 22.67 грн |
| 114+ | 21.40 грн |
| 2500+ | 21.08 грн |
| NRVUB1660CTT4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8Ax2; 60ns; D2PAK; Ufmax: 1.5V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A x2
Reverse recovery time: 60ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.5V
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8Ax2; 60ns; D2PAK; Ufmax: 1.5V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A x2
Reverse recovery time: 60ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.5V
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
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| NCP1654BD65R2G |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 9...20V DC
Topology: boost
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 9...20V DC
Topology: boost
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| NCP1654BD200R2G |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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| MMSD4448 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.4W
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.4W
на замовлення 3862 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.28 грн |
| 52+ | 7.80 грн |
| 59+ | 6.76 грн |
| 100+ | 4.09 грн |
| 229+ | 4.08 грн |
| 500+ | 3.71 грн |
| NCV4294CSN50T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.03A; TSOP5; SMD
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 30mA
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.03A; TSOP5; SMD
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 30mA
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| FDL100N50F |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264
Mounting: THT
Gate-source voltage: ±30V
Drain current: 100A
Power dissipation: 2.5kW
Drain-source voltage: 500V
Gate charge: 238nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Technology: UniFET™
Polarisation: unipolar
Case: TO264
On-state resistance: 55mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264
Mounting: THT
Gate-source voltage: ±30V
Drain current: 100A
Power dissipation: 2.5kW
Drain-source voltage: 500V
Gate charge: 238nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Technology: UniFET™
Polarisation: unipolar
Case: TO264
On-state resistance: 55mΩ
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1160.81 грн |
| 3+ | 1019.03 грн |
| 5+ | 989.59 грн |
| 10+ | 979.25 грн |
| MUN5311DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 948 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.85 грн |
| 46+ | 8.83 грн |
| 56+ | 7.16 грн |
| 66+ | 6.06 грн |
| 100+ | 5.15 грн |
| 250+ | 4.21 грн |
| 372+ | 2.51 грн |
| MUN5314DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.187W
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.187W
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
на замовлення 2503 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.28 грн |
| 63+ | 6.36 грн |
| 101+ | 3.96 грн |
| 500+ | 3.00 грн |
| 527+ | 1.77 грн |
| 1450+ | 1.68 грн |
| MUN5313DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.13 грн |
| 49+ | 8.27 грн |
| 65+ | 6.14 грн |
| 100+ | 5.43 грн |
| 406+ | 2.31 грн |
| 1115+ | 2.18 грн |
| SMUN5311DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
на замовлення 2493 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.56 грн |
| 46+ | 8.83 грн |
| 62+ | 6.49 грн |
| 75+ | 6.02 грн |
| 100+ | 5.71 грн |
| 250+ | 4.85 грн |
| 293+ | 3.20 грн |
| 805+ | 3.02 грн |
| SMUN5314DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 370 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 17.99 грн |
| 33+ | 12.09 грн |
| 39+ | 10.42 грн |
| 100+ | 8.91 грн |
| 288+ | 8.43 грн |
| MUN5312DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
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В кошику
од. на суму грн.
| MUN5315DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
товару немає в наявності
В кошику
од. на суму грн.
| MUN5316DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
товару немає в наявності
В кошику
од. на суму грн.
| SMUN5311DW1T2G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
товару немає в наявності
В кошику
од. на суму грн.
| SMUN5311DW1T3G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
товару немає в наявності
В кошику
од. на суму грн.
| SMUN5313DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
товару немає в наявності
В кошику
од. на суму грн.
| SMUN5313DW1T3G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
товару немає в наявності
В кошику
од. на суму грн.
| SMUN5315DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| NSVMUN5312DW1T2G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 60...100
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 60...100
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
товару немає в наявності
В кошику
од. на суму грн.
| NSVMUN531335DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 2.2/47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 2.2/47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
товару немає в наявності
В кошику
од. на суму грн.
| NSVMUN5316DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
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од. на суму грн.
| FDMS86350 |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; 156W; PQFN8
Kind of package: reel; tape
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 3.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 130A
Power dissipation: 156W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; 156W; PQFN8
Kind of package: reel; tape
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 3.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 130A
Power dissipation: 156W
Polarisation: unipolar
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В кошику
од. на суму грн.
| NVD5C632NLT4G |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 155A; Idm: 900A; 58W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 155A
Pulsed drain current: 900A
Power dissipation: 58W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 155A; Idm: 900A; 58W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 155A
Pulsed drain current: 900A
Power dissipation: 58W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| 74LCX245MTCX |
![]() |
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Quiescent current: 10µA
на замовлення 2031 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.25 грн |
| 11+ | 38.50 грн |
| 25+ | 34.52 грн |
| 39+ | 24.50 грн |
| 106+ | 23.15 грн |
| 74LCX07MTCX |
![]() |
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; TSSOP14; LCX
Manufacturer series: LCX
Kind of output: open drain
Case: TSSOP14
Mounting: SMD
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Number of channels: 6
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; TSSOP14; LCX
Manufacturer series: LCX
Kind of output: open drain
Case: TSSOP14
Mounting: SMD
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Number of channels: 6
Type of integrated circuit: digital
на замовлення 931 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.13 грн |
| 19+ | 21.80 грн |
| 21+ | 19.41 грн |
| 25+ | 16.78 грн |
| 77+ | 12.25 грн |
| 210+ | 11.61 грн |
| 74LCX14MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOT
Quiescent current: 10µA
Number of inputs: 1
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOT
Quiescent current: 10µA
Number of inputs: 1
Family: LCX
на замовлення 1843 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 47.97 грн |
| 17+ | 24.82 грн |
| 19+ | 21.80 грн |
| 75+ | 21.08 грн |
| 74LCX00MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Kind of gate: NAND
Number of inputs: 2
Family: LCX
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Kind of gate: NAND
Number of inputs: 2
Family: LCX
на замовлення 2490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.12 грн |
| 11+ | 37.07 грн |
| 13+ | 33.01 грн |
| 25+ | 28.24 грн |
| 50+ | 25.38 грн |
| 78+ | 12.01 грн |
| 214+ | 11.38 грн |
| 74LCX08MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Kind of gate: AND
Quiescent current: 10µA
Number of inputs: 2
Family: LCX
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Kind of gate: AND
Quiescent current: 10µA
Number of inputs: 2
Family: LCX
на замовлення 1447 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.69 грн |
| 14+ | 28.48 грн |
| 16+ | 25.30 грн |
| 25+ | 21.80 грн |
| 58+ | 16.31 грн |
| 158+ | 15.43 грн |
| 74LCX06MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Kind of output: open drain
Kind of gate: NOT
Quiescent current: 10µA
Number of inputs: 1
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Kind of output: open drain
Kind of gate: NOT
Quiescent current: 10µA
Number of inputs: 1
Family: LCX
на замовлення 1927 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.26 грн |
| 18+ | 23.23 грн |
| 25+ | 19.89 грн |
| 74+ | 12.57 грн |
| 204+ | 11.93 грн |
| 1000+ | 11.46 грн |


















