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NTB082N65S3F ONSEMI ntb082n65s3f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: D2PAK-3
Gate-source voltage: ±20V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTP082N65S3F ONSEMI ntp082n65s3f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
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NVB082N65S3F ONSEMI nvb082n65s3f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTHL082N65S3F ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDA83EB636A24F420C4&compId=NTHL082N65S3F.pdf?ci_sign=350d8b222e0cd167e8eead474732b64699a8bb46 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25.5A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
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NTHL082N65S3HF ONSEMI nthl082n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
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NTPF082N65S3F ONSEMI ntpf082n65s3f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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NVHL082N65S3F ONSEMI nvhl082n65s3f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
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NVHL082N65S3HF ONSEMI nvhl082n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
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NST45011MW6T1G ONSEMI nst45011mw6-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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FQB19N20CTM FQB19N20CTM ONSEMI FQB19N20C.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 139W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 53nC
Pulsed drain current: 76A
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MC14008BDR2G MC14008BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D759040D3&compId=MC14008B-D.pdf?ci_sign=0a42822db7c59a88e3aec077d84b513cf6944eea Category: Other logic integrated circuits
Description: IC: digital; 4bit,binary adder; CMOS; 3÷18VDC; SMD; SOIC16
Case: SOIC16
Kind of package: reel; tape
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of integrated circuit: 4bit; binary adder
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LM258N LM258N ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8EC5324E8DD5EA&compId=LM258N.pdf?ci_sign=5d434e955dfe687a2837f56207f6215941d7ab64 description Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
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FDMS8460 FDMS8460 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF709882267E28&compId=FDMS8460.pdf?ci_sign=c41291fe8962da25f420fb816b8093dfd17de685 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Gate charge: 110nC
On-state resistance: 3.3mΩ
Power dissipation: 104W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 49A
Case: PQFN8
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NVD5C460NLT4G ONSEMI nvd5c460nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 73A; Idm: 395A; 23W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 73A
Pulsed drain current: 395A
Power dissipation: 23W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVD5C460NT4G ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; Idm: 379A; 23W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Pulsed drain current: 379A
Power dissipation: 23W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS5C460NLT1G ONSEMI ntmfs5c460nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 78A; Idm: 520A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 78A
Pulsed drain current: 520A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTTFS5C460NLTAG ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 74A; Idm: 321A; 16W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 74A
Pulsed drain current: 321A
Power dissipation: 16W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C460NT1G ONSEMI nvmfs5c460n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Pulsed drain current: 352A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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TIP115G TIP115G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD1F3FCFCC40469&compId=TIP115G.PDF?ci_sign=c67cd5be4eea161253983dfc6259f437737d2fc1 Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 2A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
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MBR140SFT1G MBR140SFT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B59D1839DC0D0A17&compId=MBR140SF.PDF?ci_sign=375a7638cf14e436d2fa0fd0451e5135a411b536 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.515V
Kind of package: reel; tape
на замовлення 240 шт:
термін постачання 21-30 дні (днів)
18+24.10 грн
25+16.62 грн
28+14.39 грн
50+12.87 грн
100+11.35 грн
Мінімальне замовлення: 18
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MPSA92G MPSA92G ONSEMI mpsa92-d.pdf description Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
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MJD210G MJD210G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB8BD82016DD2143&compId=MJD210G.pdf?ci_sign=d7157ac90b47489720b2d477a29db2da88b3ec4a Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: tube
Frequency: 65MHz
на замовлення 189 шт:
термін постачання 21-30 дні (днів)
7+65.42 грн
12+34.45 грн
25+29.17 грн
46+20.86 грн
125+19.74 грн
Мінімальне замовлення: 7
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MJD5731T4G ONSEMI mjd5731-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 350V; 1A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 1A
Power dissipation: 15W
Case: DPAK
Current gain: 30...175
Mounting: SMD
Kind of package: reel; tape
Frequency: 10MHz
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2SB1215S-TL-E ONSEMI en2539-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1W; DPAK
Case: DPAK
Mounting: SMD
Collector current: 3A
Power dissipation: 1W
Polarisation: bipolar
Collector-emitter voltage: 100V
Current gain: 140...280
Kind of package: reel; tape
Type of transistor: PNP
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NCP115CMX120TCG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 0.3A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP115
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
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NCV8408BDTRKG ONSEMI ncv8408-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 10A; Ch: 1; N-Channel; SMD; DPAK; 42V
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK
On-state resistance: 55mΩ
Supply voltage: 42V
Application: automotive industry
Active logical level: high
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)
2500+42.26 грн
Мінімальне замовлення: 2500
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NCP803SN463T1G NCP803SN463T1G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 4.63V
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NCP803SN263T1G NCP803SN263T1G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
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NCP803SN120T1G NCP803SN120T1G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 1.2V
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NCP803SN160T1G NCP803SN160T1G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 1.6V
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NCP803SN232T1G NCP803SN232T1G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.32V
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NCP803SN293D2T1G NCP803SN293D2T1G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
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NCP803SN293D3T1G NCP803SN293D3T1G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
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NCP803SN293T1G NCP803SN293T1G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
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NCP803SN293T3G NCP803SN293T3G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
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NCP803SN400T1G NCP803SN400T1G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 4V
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NCP803SN438T1G NCP803SN438T1G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 4.38V
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NCP803SN463D1T1G NCP803SN463D1T1G ONSEMI max803-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 4.63V
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NSVDTA144WET1G ONSEMI dta144w-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 80...140
Application: automotive industry
Quantity in set/package: 3000pcs.
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NUP4201DR2G ONSEMI nup4201dr2-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SO8; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Kind of package: reel; tape
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NTMFS3D1N04XMT1G ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; Idm: 506A; 39W; DFN5
Case: DFN5
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15.6nC
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Power dissipation: 39W
Drain-source voltage: 40V
Drain current: 83A
Pulsed drain current: 506A
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MMSZ2V7T1G MMSZ2V7T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 1829 шт:
термін постачання 21-30 дні (днів)
56+7.75 грн
68+5.91 грн
79+5.12 грн
130+3.09 грн
160+2.51 грн
500+1.77 грн
1000+1.61 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
BZX79C2V7 BZX79C2V7 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 75uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: bulk
Case: CASE017AG
Leakage current: 75µA
Power dissipation: 0.5W
Zener voltage: 2.7V
Tolerance: ±5%
Manufacturer series: BZX79C
на замовлення 2348 шт:
термін постачання 21-30 дні (днів)
50+8.61 грн
68+5.91 грн
84+4.80 грн
140+2.86 грн
250+2.15 грн
500+1.77 грн
1000+1.73 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
NCP4208MNR2G ONSEMI ncp4208-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN48; buck
Type of integrated circuit: PMIC
Frequency: 170...750kHz; 0.25...9MHz
Mounting: SMD
Case: QFN48
Topology: buck
Number of channels: 1
Operating temperature: 0...85°C
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CAV24C16WE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CDD2F40C0D5&compId=CAV24C02-D.pdf?ci_sign=42e27669107ee1e91e6f5e6e57a9a9f52ef63846 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Case: SOIC8
Operating temperature: -40...125°C
Access time: 900ns
Operating voltage: 2.5...5.5V
Memory: 16kb EEPROM
Memory organisation: 2048x8bit
Clock frequency: 400kHz
Kind of memory: EEPROM
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NCV4264-2CST33T3G ONSEMI ncv4264-2c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
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NCV4264-2CST50T3G ONSEMI ncv4264-2c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
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NCV4264-2D33R2G ONSEMI ncv4264-2-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; Ch: 1
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
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NCV4264-2ST33T3G ONSEMI ncv4264-2-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
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NCV4264-2ST50T3G ONSEMI ncv4264-2-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
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MJH6284G MJH6284G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD13BB5CA1CC469&compId=MJH6284G.PDF?ci_sign=35d589c5879f85741611b479a86f4a809cf2f575 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO247-3
Kind of package: tube
Kind of transistor: Darlington
Case: TO247-3
Mounting: THT
Type of transistor: NPN
Collector current: 20A
Power dissipation: 160W
Collector-emitter voltage: 100V
Polarisation: bipolar
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BC549CG BC549CG ONSEMI bc550c-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power: 0.5W
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FDD86250-F085 ONSEMI fdd86250_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 150V; 50A; 160W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: PowerTrench®
Drain-source voltage: 150V
Drain current: 50A
Power dissipation: 160W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+92.10 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FDPF2D3N10C FDPF2D3N10C ONSEMI fdp2d3n10c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 157A
Pulsed drain current: 888A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
1+465.67 грн
4+307.72 грн
9+290.94 грн
50+279.75 грн
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MBR160G MBR160G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B48851A278374A16&compId=MBR160.PDF?ci_sign=813a4b55a744363539d8eee5845b9864e9c46b5c Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 0.75V; bulk
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.75V
Kind of package: bulk
на замовлення 664 шт:
термін постачання 21-30 дні (днів)
20+21.52 грн
25+16.07 грн
29+13.91 грн
50+12.47 грн
100+11.11 грн
250+9.67 грн
500+8.87 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
MC74ACT574DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62AD0639BC0D3&compId=MC74AC574-D.pdf?ci_sign=4502c8ec6fe51e7751a0825460a24de324b47d12 Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; ACT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: ACT
Kind of output: 3-state
Manufacturer series: ACT
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FDMS0312S ONSEMI FAIR-S-A0002363702-1.pdf?t.download=true&u=5oefqw fdms0312s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 90A; 46W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 90A
Power dissipation: 46W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMS7602S ONSEMI fdms7602s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 28/46nC
On-state resistance: 12/7.2mΩ
Power dissipation: 2.2/2.5W
Gate-source voltage: ±20/±20V
Drain-source voltage: 30/30V
Drain current: 30/30A
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Case: Power56
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MMBD914 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE0046E6F80745&compId=MMBD914.pdf?ci_sign=e31eeef4442ad7f024351d92e65f8f3cf87269cc Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 4pF
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SMMBD914LT1G ONSEMI mmbd914lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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NTB082N65S3F ntb082n65s3f-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: D2PAK-3
Gate-source voltage: ±20V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTP082N65S3F ntp082n65s3f-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
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NVB082N65S3F nvb082n65s3f-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTHL082N65S3F pVersion=0046&contRep=ZT&docId=005056AB90B41EDA83EB636A24F420C4&compId=NTHL082N65S3F.pdf?ci_sign=350d8b222e0cd167e8eead474732b64699a8bb46
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25.5A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
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NTHL082N65S3HF nthl082n65s3hf-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
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NTPF082N65S3F ntpf082n65s3f-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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NVHL082N65S3F nvhl082n65s3f-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
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NVHL082N65S3HF nvhl082n65s3hf-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
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NST45011MW6T1G nst45011mw6-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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FQB19N20CTM FQB19N20C.pdf
FQB19N20CTM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 139W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 53nC
Pulsed drain current: 76A
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MC14008BDR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D759040D3&compId=MC14008B-D.pdf?ci_sign=0a42822db7c59a88e3aec077d84b513cf6944eea
MC14008BDR2G
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; 4bit,binary adder; CMOS; 3÷18VDC; SMD; SOIC16
Case: SOIC16
Kind of package: reel; tape
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of integrated circuit: 4bit; binary adder
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LM258N description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8EC5324E8DD5EA&compId=LM258N.pdf?ci_sign=5d434e955dfe687a2837f56207f6215941d7ab64
LM258N
Виробник: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
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FDMS8460 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF709882267E28&compId=FDMS8460.pdf?ci_sign=c41291fe8962da25f420fb816b8093dfd17de685
FDMS8460
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Gate charge: 110nC
On-state resistance: 3.3mΩ
Power dissipation: 104W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 49A
Case: PQFN8
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NVD5C460NLT4G nvd5c460nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 73A; Idm: 395A; 23W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 73A
Pulsed drain current: 395A
Power dissipation: 23W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVD5C460NT4G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; Idm: 379A; 23W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Pulsed drain current: 379A
Power dissipation: 23W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS5C460NLT1G ntmfs5c460nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 78A; Idm: 520A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 78A
Pulsed drain current: 520A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTTFS5C460NLTAG
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 74A; Idm: 321A; 16W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 74A
Pulsed drain current: 321A
Power dissipation: 16W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C460NT1G nvmfs5c460n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Pulsed drain current: 352A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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TIP115G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD1F3FCFCC40469&compId=TIP115G.PDF?ci_sign=c67cd5be4eea161253983dfc6259f437737d2fc1
TIP115G
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 2A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
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MBR140SFT1G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B59D1839DC0D0A17&compId=MBR140SF.PDF?ci_sign=375a7638cf14e436d2fa0fd0451e5135a411b536
MBR140SFT1G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.515V
Kind of package: reel; tape
на замовлення 240 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+24.10 грн
25+16.62 грн
28+14.39 грн
50+12.87 грн
100+11.35 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
MPSA92G description mpsa92-d.pdf
MPSA92G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
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MJD210G pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB8BD82016DD2143&compId=MJD210G.pdf?ci_sign=d7157ac90b47489720b2d477a29db2da88b3ec4a
MJD210G
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: tube
Frequency: 65MHz
на замовлення 189 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+65.42 грн
12+34.45 грн
25+29.17 грн
46+20.86 грн
125+19.74 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MJD5731T4G mjd5731-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 350V; 1A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 1A
Power dissipation: 15W
Case: DPAK
Current gain: 30...175
Mounting: SMD
Kind of package: reel; tape
Frequency: 10MHz
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2SB1215S-TL-E en2539-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1W; DPAK
Case: DPAK
Mounting: SMD
Collector current: 3A
Power dissipation: 1W
Polarisation: bipolar
Collector-emitter voltage: 100V
Current gain: 140...280
Kind of package: reel; tape
Type of transistor: PNP
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NCP115CMX120TCG pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 0.3A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP115
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
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NCV8408BDTRKG ncv8408-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 10A; Ch: 1; N-Channel; SMD; DPAK; 42V
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK
On-state resistance: 55mΩ
Supply voltage: 42V
Application: automotive industry
Active logical level: high
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+42.26 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NCP803SN463T1G max803-d.pdf
NCP803SN463T1G
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 4.63V
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NCP803SN263T1G max803-d.pdf
NCP803SN263T1G
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
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NCP803SN120T1G max803-d.pdf
NCP803SN120T1G
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 1.2V
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NCP803SN160T1G max803-d.pdf
NCP803SN160T1G
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 1.6V
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NCP803SN232T1G max803-d.pdf
NCP803SN232T1G
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.32V
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NCP803SN293D2T1G max803-d.pdf
NCP803SN293D2T1G
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
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NCP803SN293D3T1G max803-d.pdf
NCP803SN293D3T1G
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
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NCP803SN293T1G max803-d.pdf
NCP803SN293T1G
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
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NCP803SN293T3G max803-d.pdf
NCP803SN293T3G
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
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NCP803SN400T1G max803-d.pdf
NCP803SN400T1G
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 4V
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NCP803SN438T1G max803-d.pdf
NCP803SN438T1G
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 4.38V
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NCP803SN463D1T1G max803-d.pdf
NCP803SN463D1T1G
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 4.63V
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NSVDTA144WET1G dta144w-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 80...140
Application: automotive industry
Quantity in set/package: 3000pcs.
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NUP4201DR2G nup4201dr2-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SO8; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Kind of package: reel; tape
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NTMFS3D1N04XMT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; Idm: 506A; 39W; DFN5
Case: DFN5
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15.6nC
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Power dissipation: 39W
Drain-source voltage: 40V
Drain current: 83A
Pulsed drain current: 506A
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MMSZ2V7T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f
MMSZ2V7T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 1829 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.75 грн
68+5.91 грн
79+5.12 грн
130+3.09 грн
160+2.51 грн
500+1.77 грн
1000+1.61 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
BZX79C2V7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106
BZX79C2V7
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 75uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: bulk
Case: CASE017AG
Leakage current: 75µA
Power dissipation: 0.5W
Zener voltage: 2.7V
Tolerance: ±5%
Manufacturer series: BZX79C
на замовлення 2348 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.61 грн
68+5.91 грн
84+4.80 грн
140+2.86 грн
250+2.15 грн
500+1.77 грн
1000+1.73 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
NCP4208MNR2G ncp4208-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN48; buck
Type of integrated circuit: PMIC
Frequency: 170...750kHz; 0.25...9MHz
Mounting: SMD
Case: QFN48
Topology: buck
Number of channels: 1
Operating temperature: 0...85°C
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CAV24C16WE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CDD2F40C0D5&compId=CAV24C02-D.pdf?ci_sign=42e27669107ee1e91e6f5e6e57a9a9f52ef63846
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Case: SOIC8
Operating temperature: -40...125°C
Access time: 900ns
Operating voltage: 2.5...5.5V
Memory: 16kb EEPROM
Memory organisation: 2048x8bit
Clock frequency: 400kHz
Kind of memory: EEPROM
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NCV4264-2CST33T3G ncv4264-2c-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
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NCV4264-2CST50T3G ncv4264-2c-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
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NCV4264-2D33R2G ncv4264-2-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; Ch: 1
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
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NCV4264-2ST33T3G ncv4264-2-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
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NCV4264-2ST50T3G ncv4264-2-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
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MJH6284G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD13BB5CA1CC469&compId=MJH6284G.PDF?ci_sign=35d589c5879f85741611b479a86f4a809cf2f575
MJH6284G
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO247-3
Kind of package: tube
Kind of transistor: Darlington
Case: TO247-3
Mounting: THT
Type of transistor: NPN
Collector current: 20A
Power dissipation: 160W
Collector-emitter voltage: 100V
Polarisation: bipolar
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BC549CG bc550c-d.pdf
BC549CG
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power: 0.5W
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FDD86250-F085 fdd86250_f085-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 150V; 50A; 160W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: PowerTrench®
Drain-source voltage: 150V
Drain current: 50A
Power dissipation: 160W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+92.10 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FDPF2D3N10C fdp2d3n10c-d.pdf
FDPF2D3N10C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 157A
Pulsed drain current: 888A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+465.67 грн
4+307.72 грн
9+290.94 грн
50+279.75 грн
В кошику  од. на суму  грн.
MBR160G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B48851A278374A16&compId=MBR160.PDF?ci_sign=813a4b55a744363539d8eee5845b9864e9c46b5c
MBR160G
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 0.75V; bulk
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.75V
Kind of package: bulk
на замовлення 664 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.52 грн
25+16.07 грн
29+13.91 грн
50+12.47 грн
100+11.11 грн
250+9.67 грн
500+8.87 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
MC74ACT574DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62AD0639BC0D3&compId=MC74AC574-D.pdf?ci_sign=4502c8ec6fe51e7751a0825460a24de324b47d12
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; ACT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: ACT
Kind of output: 3-state
Manufacturer series: ACT
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FDMS0312S FAIR-S-A0002363702-1.pdf?t.download=true&u=5oefqw fdms0312s-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 90A; 46W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 90A
Power dissipation: 46W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMS7602S fdms7602s-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 28/46nC
On-state resistance: 12/7.2mΩ
Power dissipation: 2.2/2.5W
Gate-source voltage: ±20/±20V
Drain-source voltage: 30/30V
Drain current: 30/30A
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Case: Power56
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MMBD914 pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE0046E6F80745&compId=MMBD914.pdf?ci_sign=e31eeef4442ad7f024351d92e65f8f3cf87269cc
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 4pF
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SMMBD914LT1G mmbd914lt1-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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