| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NCP114BMX075TCG | onsemi |
Description: NCP114 - LDO REGULATOR, 300 MA,Packaging: Bulk Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-UDFN (1.0x1.0) Voltage - Output (Min/Fixed): 0.75V Control Features: Enable PSRR: 75dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 168000 шт: термін постачання 21-31 дні (днів) |
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NCP177AMX070TCG | onsemi |
Description: IC REG LINEAR 0.7V 500MA 4XDFNPackaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 0.7V Control Features: Enable PSRR: 75dB (1kHz) Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FGY60T120SWD | onsemi |
Description: IGBT FIELD STOP 1200V 105A TO247Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15A, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 28.8ns/153.6ns Switching Energy: 5.7mJ (on), 2.8mJ (off) Test Condition: 600V, 60A, 4.7Ohm, 15V Gate Charge: 174 nC Current - Collector (Ic) (Max): 105 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 240 A Power - Max: 635 W |
на замовлення 9354 шт: термін постачання 21-31 дні (днів) |
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| NXH160T120L2Q2F2SG | onsemi |
Description: POWER INTEGRATED MODULE (PIM), IPackaging: Bulk |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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SNXH160T120L2Q1PG | onsemi |
Description: 160A 1200V PIM Q1PACKPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A NTC Thermistor: Yes IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 280 W Current - Collector Cutoff (Max): 400 µA Input Capacitance (Cies) @ Vce: 19380 pF @ 25 V |
на замовлення 21 шт: термін постачання 21-31 дні (днів) |
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1.5SMC27AT3 | onsemi |
Description: TVS DIODE 23.1VWM 37.5VC SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 40A Voltage - Reverse Standoff (Typ): 23.1V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 37.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1.5SMC27AT3 | onsemi |
Description: TVS DIODE 23.1VWM 37.5VC SMCPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 40A Voltage - Reverse Standoff (Typ): 23.1V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 37.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RD1006LS-SB5 | onsemi |
Description: DIODE STANDARD 10A TO220FISBPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220FI(LS)-SB Operating Temperature - Junction: 150°C (Max) Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
на замовлення 1335 шт: термін постачання 21-31 дні (днів) |
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RD1006LS-SB5 | onsemi |
Description: DIODE STANDARD 10A TO220FISBPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220FI(LS)-SB Operating Temperature - Junction: 150°C (Max) Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BFL4004 | onsemi |
Description: MOSFET N-CH 800V 4.3A TO220FIPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V Power Dissipation (Max): 2W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FI(LS) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V |
на замовлення 111 шт: термін постачання 21-31 дні (днів) |
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BFL4004 | onsemi |
Description: MOSFET N-CH 800V 4.3A TO220FIPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V Power Dissipation (Max): 2W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FI(LS) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDFMA2P029Z-F106 | onsemi |
Description: MOSFET P-CH 20V 3.1A 6MICROFETPackaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDFMA2P029Z-F106 | onsemi |
Description: MOSFET P-CH 20V 3.1A 6MICROFETPackaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS6H852NT1G | onsemi |
Description: MOSFET N-CH 80V 10A/40A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 45µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS6H852NT1G | onsemi |
Description: MOSFET N-CH 80V 10A/40A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 45µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1175 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H854NTAG | onsemi |
Description: MOSFET N-CH 80V 9.5A/44A 8WDFNPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVTFS6H854NTAG | onsemi |
Description: MOSFET N-CH 80V 9.5A/44A 8WDFNPackaging: Cut Tape (CT) |
на замовлення 1490 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H854NWFTAG | onsemi |
Description: MOSFET N-CH 80V 9.5A/44A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 45µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H854NWFTAG | onsemi |
Description: MOSFET N-CH 80V 9.5A/44A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 45µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 9077 шт: термін постачання 21-31 дні (днів) |
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NVTFS4C13NTWG | onsemi |
Description: MOSFET N-CH 30V 14A 8WDFNPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVTFS4C13NTWG | onsemi |
Description: MOSFET N-CH 30V 14A 8WDFNPackaging: Cut Tape (CT) |
на замовлення 4958 шт: термін постачання 21-31 дні (днів) |
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NVTFS4C13NWFTWG | onsemi |
Description: MOSFET N-CH 30V 14A 8WDFNPackaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NVTFS4C13NWFTWG | onsemi |
Description: MOSFET N-CH 30V 14A 8WDFNPackaging: Cut Tape (CT) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NVTFS4C13NWFTAG | onsemi |
Description: MOSFET N-CH 30V 14A 8WDFNPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVTFS4C13NWFTAG | onsemi |
Description: MOSFET N-CH 30V 14A 8WDFNPackaging: Cut Tape (CT) |
на замовлення 1450 шт: термін постачання 21-31 дні (днів) |
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NTD4815N-35G | onsemi |
Description: MOSFET N-CH 30V 6.9A/35A IPAKPackaging: Bulk Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 12 V |
на замовлення 58800 шт: термін постачання 21-31 дні (днів) |
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NTTFS6H854NTAG | onsemi |
Description: TRENCH 8 80V NFETPackaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SZMM5Z8V2T1G | onsemi |
Description: DIODE ZENER 8.2V 500MW SOD523Packaging: Tape & Reel (TR) Tolerance: ±6% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-523 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 700 nA @ 5 V Qualification: AEC-Q101 |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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SZMM5Z8V2T1G | onsemi |
Description: DIODE ZENER 8.2V 500MW SOD523Packaging: Cut Tape (CT) Tolerance: ±6% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-523 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 700 nA @ 5 V Qualification: AEC-Q101 |
на замовлення 53185 шт: термін постачання 21-31 дні (днів) |
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NTBL060N065SC1 | onsemi |
Description: M2 650V SIC MOSFET 60MOHM WITH TPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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NTBL060N065SC1 | onsemi |
Description: M2 650V SIC MOSFET 60MOHM WITH TPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V |
на замовлення 4003 шт: термін постачання 21-31 дні (днів) |
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CPH3114-TL-E | onsemi |
Description: TRANS PNP 15V 1.5A 3-CPHPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 180mV @ 15mA, 750mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 350MHz Supplier Device Package: 3-CPH Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 900 mW |
на замовлення 23950 шт: термін постачання 21-31 дні (днів) |
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CAT34C02HU4EGT4A | onsemi |
Description: IC EEPROM 2KBIT I2C 8UDFNPackaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 8-UDFN-EP (2x3) Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 256 x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT34C02HU4EGT4A | onsemi |
Description: IC EEPROM 2KBIT I2C 8UDFNPackaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 8-UDFN-EP (2x3) Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 256 x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDU8880 | onsemi |
Description: MOSFET N-CH 30V 13A/58A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDU8876 | onsemi |
Description: MOSFET N-CH 30V 15A/73A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 73A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 35A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| CAT5119TBI50T-MP | onsemi |
Description: IC REG LINEAR Packaging: Bulk DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BD17910STU | onsemi |
Description: TRANS NPN 80V 3A TO-126-3Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 3MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 30 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMFT2N25ET3 | onsemi |
Description: SMALL SIGNAL N-CHANNEL MOSFETPackaging: Bulk |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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FDMD8540L | onsemi |
Description: MOSFET 2N-CH 40V 33A 8PWR 5X6Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 33A, 156A Input Capacitance (Ciss) (Max) @ Vds: 7940pF @ 20V Rds On (Max) @ Id, Vgs: 1.5mOhm @ 33A, 10V Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power 5x6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT812MTBI-GT3 | onsemi |
Description: IC SUPERVISOR 1 CHANNEL SOT143Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active High Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 140ms Minimum Voltage - Threshold: 4.38V Supplier Device Package: SOT-143-4 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT812LTBI-T3 | onsemi |
Description: IC SUPERVISOR 1 CHANNEL SOT143Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active High Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 140ms Minimum Voltage - Threshold: 4.63V Supplier Device Package: SOT-143-4 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT812LTBI-T3 | onsemi |
Description: IC SUPERVISOR 1 CHANNEL SOT143Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active High Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 140ms Minimum Voltage - Threshold: 4.63V Supplier Device Package: SOT-143-4 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT812LTBI-T3 | onsemi |
Description: IC SUPERVISOR 1 CHANNEL SOT143Packaging: Bulk Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active High Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 140ms Minimum Voltage - Threshold: 4.63V Supplier Device Package: SOT-143-4 DigiKey Programmable: Not Verified |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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CAT812TTBI-T3 | onsemi |
Description: IC SUPERVISOR 1 CHANNEL SOT143Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active High Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 140ms Minimum Voltage - Threshold: 3.08V Supplier Device Package: SOT-143-4 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT812TTBI-T3 | onsemi |
Description: IC SUPERVISOR 1 CHANNEL SOT143Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active High Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 140ms Minimum Voltage - Threshold: 3.08V Supplier Device Package: SOT-143-4 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT812TTBI-T3 | onsemi |
Description: IC SUPERVISOR 1 CHANNEL SOT143Packaging: Bulk Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active High Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 140ms Minimum Voltage - Threshold: 3.08V Supplier Device Package: SOT-143-4 DigiKey Programmable: Not Verified |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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DA121TT1G | onsemi |
Description: DIODE GP 80V 200MA SC75 SOT416Packaging: Bulk Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SC-75, SOT-416 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 368700 шт: термін постачання 21-31 дні (днів) |
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| DAN222 | onsemi |
Description: DIODE SWITCH DUAL CC 80V SOT416Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SZESD7102BT1G | onsemi |
Description: TVS DIODE 5VWM 30VC SC75 SOT416Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SC-75, SOT-416 Unidirectional Channels: 2 Voltage - Breakdown (Min): 16.5V Voltage - Clamping (Max) @ Ipp: 30V (Typ) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AR0522SRSM09SURA0-DR | onsemi |
Description: IMAGE SENSOR CMOS 5MP 52PLCCPackaging: Tray Package / Case: 52-LCC Type: CMOS Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2592H x 1944V Supplier Device Package: 52-PLCC (12x12) Frames per Second: 60.0 |
на замовлення 5305 шт: термін постачання 21-31 дні (днів) |
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AR0522SRSC09SURA0-DR | onsemi |
Description: IMAGE SENSOR CMOS 5MP 52PLCCPackaging: Tray Package / Case: 52-LCC Type: CMOS Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2592H x 1944V Supplier Device Package: 52-PLCC (12x12) Frames per Second: 60.0 |
на замовлення 1461 шт: термін постачання 21-31 дні (днів) |
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2SD1816T-TL-E | onsemi |
Description: TRANS NPN 100V 4A TP-FAPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V Frequency - Transition: 180MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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NOIX1SE8000B-LTI | onsemi |
Description: IC IMAGE SENSOR CMOSPackaging: Bulk Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.7V ~1.9V, 2.7V ~ 2.9V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 4096H x 2160V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 128.0 |
на замовлення 873 шт: термін постачання 21-31 дні (днів) |
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NOIX2SE8000B-LTI | onsemi |
Description: IC IMAGE SENS 8MP COLOR 163CLGAPackaging: Bulk Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.1V ~ 1.3V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 4096H x 2160V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 128.0 |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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MPS6727 | onsemi |
Description: TRANS PNP 40V 1A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W |
на замовлення 3968 шт: термін постачання 21-31 дні (днів) |
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MC74AC14DR2G-Q | onsemi |
Description: HEX INVERTER WITH SCHMITT TRIGGEPackaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 6 Supplier Device Package: 14-SOIC Input Logic Level - High: 2.2V ~ 3.9V Input Logic Level - Low: 0.5V ~ 1.1V Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 4 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74AC14DR2G-Q | onsemi |
Description: HEX INVERTER WITH SCHMITT TRIGGEPackaging: Cut Tape (CT) Features: Schmitt Trigger Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 6 Supplier Device Package: 14-SOIC Input Logic Level - High: 2.2V ~ 3.9V Input Logic Level - Low: 0.5V ~ 1.1V Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 4 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74AC14DTR2G-Q | onsemi |
Description: HEX INVERTER WITH SCHMITT TRIGGEPackaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 6 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2.2V ~ 3.9V Input Logic Level - Low: 0.5V ~ 1.1V Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 4 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74AC14DTR2G-Q | onsemi |
Description: HEX INVERTER WITH SCHMITT TRIGGEPackaging: Cut Tape (CT) Features: Schmitt Trigger Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 6 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2.2V ~ 3.9V Input Logic Level - Low: 0.5V ~ 1.1V Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 4 µA |
товару немає в наявності |
В кошику од. на суму грн. |
| NCP114BMX075TCG |
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Виробник: onsemi
Description: NCP114 - LDO REGULATOR, 300 MA,
Packaging: Bulk
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 0.75V
Control Features: Enable
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: NCP114 - LDO REGULATOR, 300 MA,
Packaging: Bulk
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 0.75V
Control Features: Enable
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 168000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5236+ | 4.65 грн |
| NCP177AMX070TCG |
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Виробник: onsemi
Description: IC REG LINEAR 0.7V 500MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 0.7V
Control Features: Enable
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 0.7V 500MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 0.7V
Control Features: Enable
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
| FGY60T120SWD |
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Виробник: onsemi
Description: IGBT FIELD STOP 1200V 105A TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15A, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 28.8ns/153.6ns
Switching Energy: 5.7mJ (on), 2.8mJ (off)
Test Condition: 600V, 60A, 4.7Ohm, 15V
Gate Charge: 174 nC
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 635 W
Description: IGBT FIELD STOP 1200V 105A TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15A, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 28.8ns/153.6ns
Switching Energy: 5.7mJ (on), 2.8mJ (off)
Test Condition: 600V, 60A, 4.7Ohm, 15V
Gate Charge: 174 nC
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 635 W
на замовлення 9354 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 457.91 грн |
| 10+ | 398.61 грн |
| 30+ | 380.06 грн |
| 120+ | 295.78 грн |
| 270+ | 269.69 грн |
| 510+ | 252.29 грн |
| 1020+ | 222.48 грн |
| 2520+ | 213.92 грн |
| NXH160T120L2Q2F2SG |
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на замовлення 240 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 9926.97 грн |
| SNXH160T120L2Q1PG |
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Виробник: onsemi
Description: 160A 1200V PIM Q1PACK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 19380 pF @ 25 V
Description: 160A 1200V PIM Q1PACK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 19380 pF @ 25 V
на замовлення 21 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5462.66 грн |
| 1.5SMC27AT3 |
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Виробник: onsemi
Description: TVS DIODE 23.1VWM 37.5VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 23.1VWM 37.5VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC27AT3 |
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Виробник: onsemi
Description: TVS DIODE 23.1VWM 37.5VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 23.1VWM 37.5VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| RD1006LS-SB5 |
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Виробник: onsemi
Description: DIODE STANDARD 10A TO220FISB
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FI(LS)-SB
Operating Temperature - Junction: 150°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE STANDARD 10A TO220FISB
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FI(LS)-SB
Operating Temperature - Junction: 150°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 1335 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 221+ | 108.04 грн |
| RD1006LS-SB5 |
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Виробник: onsemi
Description: DIODE STANDARD 10A TO220FISB
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FI(LS)-SB
Operating Temperature - Junction: 150°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE STANDARD 10A TO220FISB
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FI(LS)-SB
Operating Temperature - Junction: 150°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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| BFL4004 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 800V 4.3A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Description: MOSFET N-CH 800V 4.3A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
на замовлення 111 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 111+ | 253.42 грн |
| BFL4004 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 800V 4.3A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Description: MOSFET N-CH 800V 4.3A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
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| FDFMA2P029Z-F106 |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 3.1A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
Description: MOSFET P-CH 20V 3.1A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
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| FDFMA2P029Z-F106 |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 3.1A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
Description: MOSFET P-CH 20V 3.1A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
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| NVMFS6H852NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 10A/40A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 10A/40A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
Qualification: AEC-Q101
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| NVMFS6H852NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 10A/40A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 10A/40A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1175 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.86 грн |
| 10+ | 77.11 грн |
| 100+ | 51.73 грн |
| 500+ | 38.34 грн |
| NVTFS6H854NTAG |
![]() |
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.35 грн |
| 10+ | 59.48 грн |
| 100+ | 46.27 грн |
| 500+ | 36.81 грн |
| NVTFS6H854NWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 9.5A/44A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 9.5A/44A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 40 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 31.53 грн |
| 3000+ | 28.02 грн |
| 4500+ | 26.82 грн |
| 7500+ | 23.91 грн |
| NVTFS6H854NWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 9.5A/44A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 9.5A/44A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 40 V
Qualification: AEC-Q101
на замовлення 9077 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 110.13 грн |
| 10+ | 66.98 грн |
| 100+ | 44.62 грн |
| 500+ | 32.87 грн |
| NVTFS4C13NTWG |
![]() |
на замовлення 4958 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 78.66 грн |
| 10+ | 61.48 грн |
| 100+ | 47.79 грн |
| 500+ | 38.02 грн |
| 1000+ | 30.97 грн |
| 2000+ | 29.15 грн |
| NVTFS4C13NWFTWG |
![]() |
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 38.56 грн |
| NVTFS4C13NWFTWG |
![]() |
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 97.71 грн |
| 10+ | 77.11 грн |
| 100+ | 59.98 грн |
| 500+ | 47.71 грн |
| 1000+ | 38.87 грн |
| 2000+ | 36.59 грн |
| NVTFS4C13NWFTAG |
![]() |
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 97.71 грн |
| 10+ | 77.03 грн |
| 100+ | 59.92 грн |
| 500+ | 47.66 грн |
| NTD4815N-35G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 6.9A/35A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 12 V
Description: MOSFET N-CH 30V 6.9A/35A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 12 V
на замовлення 58800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 960+ | 24.57 грн |
| SZMM5Z8V2T1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 8.2V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 8.2V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.79 грн |
| 6000+ | 4.54 грн |
| 9000+ | 4.45 грн |
| 15000+ | 4.10 грн |
| SZMM5Z8V2T1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 8.2V 500MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 8.2V 500MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
на замовлення 53185 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.36 грн |
| 22+ | 14.75 грн |
| 100+ | 6.99 грн |
| 500+ | 6.52 грн |
| 1000+ | 6.49 грн |
| NTBL060N065SC1 |
![]() |
Виробник: onsemi
Description: M2 650V SIC MOSFET 60MOHM WITH T
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Description: M2 650V SIC MOSFET 60MOHM WITH T
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 308.68 грн |
| NTBL060N065SC1 |
![]() |
Виробник: onsemi
Description: M2 650V SIC MOSFET 60MOHM WITH T
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Description: M2 650V SIC MOSFET 60MOHM WITH T
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
на замовлення 4003 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 681.49 грн |
| 10+ | 450.28 грн |
| 100+ | 363.83 грн |
| CPH3114-TL-E |
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Виробник: onsemi
Description: TRANS PNP 15V 1.5A 3-CPH
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 15mA, 750mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: 3-CPH
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 900 mW
Description: TRANS PNP 15V 1.5A 3-CPH
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 15mA, 750mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: 3-CPH
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 900 mW
на замовлення 23950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1758+ | 12.16 грн |
| CAT34C02HU4EGT4A |
![]() |
Виробник: onsemi
Description: IC EEPROM 2KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 8-UDFN-EP (2x3)
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
Description: IC EEPROM 2KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 8-UDFN-EP (2x3)
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
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| CAT34C02HU4EGT4A |
![]() |
Виробник: onsemi
Description: IC EEPROM 2KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 8-UDFN-EP (2x3)
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
Description: IC EEPROM 2KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 8-UDFN-EP (2x3)
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
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| FDU8880 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 13A/58A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Description: MOSFET N-CH 30V 13A/58A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
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| FDU8876 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 15A/73A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 35A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
Description: MOSFET N-CH 30V 15A/73A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 35A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
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| BD17910STU |
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Виробник: onsemi
Description: TRANS NPN 80V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Description: TRANS NPN 80V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
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| MMFT2N25ET3 |
![]() |
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1902+ | 12.41 грн |
| FDMD8540L |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 40V 33A 8PWR 5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 33A, 156A
Input Capacitance (Ciss) (Max) @ Vds: 7940pF @ 20V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 33A, 10V
Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power 5x6
Description: MOSFET 2N-CH 40V 33A 8PWR 5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 33A, 156A
Input Capacitance (Ciss) (Max) @ Vds: 7940pF @ 20V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 33A, 10V
Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power 5x6
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| CAT812MTBI-GT3 |
![]() |
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.38V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.38V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
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| CAT812LTBI-T3 |
![]() |
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
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| CAT812LTBI-T3 |
![]() |
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
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| CAT812LTBI-T3 |
![]() |
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1211+ | 19.38 грн |
| CAT812TTBI-T3 |
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Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 3.08V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 3.08V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
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| CAT812TTBI-T3 |
![]() |
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 3.08V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 3.08V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
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| CAT812TTBI-T3 |
![]() |
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 3.08V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 3.08V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1211+ | 19.38 грн |
| DA121TT1G |
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Виробник: onsemi
Description: DIODE GP 80V 200MA SC75 SOT416
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-75, SOT-416
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE GP 80V 200MA SC75 SOT416
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-75, SOT-416
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 368700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11539+ | 2.33 грн |
| SZESD7102BT1G |
![]() |
Виробник: onsemi
Description: TVS DIODE 5VWM 30VC SC75 SOT416
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-75, SOT-416
Unidirectional Channels: 2
Voltage - Breakdown (Min): 16.5V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 30VC SC75 SOT416
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-75, SOT-416
Unidirectional Channels: 2
Voltage - Breakdown (Min): 16.5V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| AR0522SRSM09SURA0-DR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR CMOS 5MP 52PLCC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
Description: IMAGE SENSOR CMOS 5MP 52PLCC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
на замовлення 5305 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2481.67 грн |
| 10+ | 1991.23 грн |
| 25+ | 1763.59 грн |
| 80+ | 1601.68 грн |
| 440+ | 1494.91 грн |
| AR0522SRSC09SURA0-DR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR CMOS 5MP 52PLCC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
Description: IMAGE SENSOR CMOS 5MP 52PLCC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
на замовлення 1461 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1666.04 грн |
| 5+ | 1469.74 грн |
| 10+ | 1419.26 грн |
| 25+ | 1275.43 грн |
| 50+ | 1240.41 грн |
| 2SD1816T-TL-E |
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Виробник: onsemi
Description: TRANS NPN 100V 4A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS NPN 100V 4A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 516+ | 40.93 грн |
| NOIX1SE8000B-LTI |
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Виробник: onsemi
Description: IC IMAGE SENSOR CMOS
Packaging: Bulk
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
Description: IC IMAGE SENSOR CMOS
Packaging: Bulk
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
на замовлення 873 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 31313.63 грн |
| NOIX2SE8000B-LTI |
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Виробник: onsemi
Description: IC IMAGE SENS 8MP COLOR 163CLGA
Packaging: Bulk
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
Description: IC IMAGE SENS 8MP COLOR 163CLGA
Packaging: Bulk
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
на замовлення 17 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 28097.47 грн |
| MPS6727 |
Виробник: onsemi
Description: TRANS PNP 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Description: TRANS PNP 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
на замовлення 3968 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3968+ | 6.12 грн |
| MC74AC14DR2G-Q |
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Виробник: onsemi
Description: HEX INVERTER WITH SCHMITT TRIGGE
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Description: HEX INVERTER WITH SCHMITT TRIGGE
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
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| MC74AC14DR2G-Q |
![]() |
Виробник: onsemi
Description: HEX INVERTER WITH SCHMITT TRIGGE
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Description: HEX INVERTER WITH SCHMITT TRIGGE
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
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| MC74AC14DTR2G-Q |
![]() |
Виробник: onsemi
Description: HEX INVERTER WITH SCHMITT TRIGGE
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Description: HEX INVERTER WITH SCHMITT TRIGGE
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
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| MC74AC14DTR2G-Q |
![]() |
Виробник: onsemi
Description: HEX INVERTER WITH SCHMITT TRIGGE
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Description: HEX INVERTER WITH SCHMITT TRIGGE
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
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