| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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N04L63W2AB27I | onsemi |
Description: IC SRAM 4MBIT PARALLEL 48BGAPackaging: Tray Package / Case: 48-LFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-BGA (6x8) Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
на замовлення 99 шт: термін постачання 21-31 дні (днів) |
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N04L63W2AB27I | onsemi |
Description: IC SRAM 4MBIT PARALLEL 48BGAPackaging: Tray Package / Case: 48-LFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-BGA (6x8) Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NLX1G57CMUTCG | onsemi |
Description: IC LOGIC SMDPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Output Type: Single-Ended Mounting Type: Surface Mount Logic Type: Configurable Multiple Function Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Schmitt Trigger Input: Yes Supplier Device Package: 6-UDFN (1x1) Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NLX1G57CMUTCG | onsemi |
Description: IC LOGIC SMDPackaging: Bulk Package / Case: 6-UFDFN Output Type: Single-Ended Mounting Type: Surface Mount Logic Type: Configurable Multiple Function Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Schmitt Trigger Input: Yes Supplier Device Package: 6-UDFN (1x1) Number of Circuits: 1 |
на замовлення 177000 шт: термін постачання 21-31 дні (днів) |
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NCP3902FCCTBG | onsemi |
Description: IC PWR SWITCH P-CHAN 2:1 20WLCSPPackaging: Tape & Reel (TR) Features: Sleep Mode Package / Case: 20-UFBGA, WLCSP Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: USB Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C Output Configuration: High Side Rds On (Typ): 95mOhm Input Type: Differential Voltage - Load: 2.3V ~ 5.5V Voltage - Supply (Vcc/Vdd): 9V ~ 15V Current - Output (Max): 5A Ratio - Input:Output: 2:1 Supplier Device Package: 20-WLCSP (1.66x2.26) Fault Protection: Current Limiting, Over Temperature, UVLO |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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HUF75637S3ST | onsemi |
Description: MOSFET N-CH 100V 44A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V Power Dissipation (Max): 155W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDS4488 | onsemi |
Description: MOSFET N-CH 30V 7.9A 8SOICPackaging: Cut Tape (CT) |
на замовлення 256 шт: термін постачання 21-31 дні (днів) |
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NLX1G332AMX1TCG | onsemi |
Description: IC GATE OR 1CH 3-INP 6ULLGAPackaging: Bulk Package / Case: 6-XFLGA Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Supplier Device Package: 6-ULLGA (1.45x1) Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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NLX1G332CMUTCG | onsemi |
Description: IC GATE OR 1CH 3-INP 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Supplier Device Package: 6-UDFN (1x1) Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HCT366ADTG | onsemi |
Description: IC BUFFER INVERT 6V 16TSSOPPackaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 6 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 16-TSSOP |
на замовлення 69491 шт: термін постачання 21-31 дні (днів) |
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MC74HCT366ADG | onsemi |
Description: IC BUFFER INVERT 6V 16SOICPackaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 6 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 16-SOIC |
на замовлення 27468 шт: термін постачання 21-31 дні (днів) |
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NLV74HCT366ADTRG | onsemi |
Description: IC BUFFER INVERT 6V 16TSSOP Packaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 6 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 16-TSSOP |
на замовлення 37450 шт: термін постачання 21-31 дні (днів) |
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MC74HCT366ADR2G | onsemi |
Description: IC BUFFER INVERT 6V 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 6 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 16-SOIC |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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MC74HCT366ADR2G | onsemi |
Description: IC BUFFER INVERT 6V 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 6 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 16-SOIC |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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NTD4805NT4G | onsemi |
Description: MOSFET N-CH 30V 12.7A/95A DPAKPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 95A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 1.41W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 12 V |
на замовлення 588024 шт: термін постачання 21-31 дні (днів) |
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NRVTS5100ETFSTWG | onsemi |
Description: DIODE SCHOTTKY 100V 5A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 26.5pF @ 100V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDFS2P102A | onsemi |
Description: MOSFET P-CH 20V 3.3A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 3.3A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HC1G00DFT1G | onsemi |
Description: IC GATE NAND 1CH 2-INP SC88APackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 2 Supplier Device Package: SC-88A (SC-70-5/SOT-353) Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 76537 шт: термін постачання 21-31 дні (днів) |
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FDMS8025S | onsemi |
Description: MOSFET N-CH 30V 24A/49A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMS8025S | onsemi |
Description: MOSFET N-CH 30V 24A/49A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V |
на замовлення 5328 шт: термін постачання 21-31 дні (днів) |
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SBA100-04J | onsemi |
Description: RECTIFIER DIODE, SCHOTTKY, 10A,Packaging: Bulk |
на замовлення 2432 шт: термін постачання 21-31 дні (днів) |
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RHRG5060 | onsemi |
Description: DIODE GEN PURP 600V 50A TO247-2Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Avalanche Current - Average Rectified (Io): 50A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 50 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
на замовлення 1490 шт: термін постачання 21-31 дні (днів) |
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BAT54ST | onsemi |
Description: DIODE ARR SCHOT 30V 100MA SOT523Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SOT-523 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAT54ST | onsemi |
Description: DIODE ARR SCHOT 30V 100MA SOT523Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SOT-523 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SN74LS85D | onsemi |
Description: IC MAG COMPARATOR 4BIT 16-SOICPackaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Active High Type: Magnitude Comparator Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Output High, Low: 400µA, 8mA Supplier Device Package: 16-SOIC Max Propagation Delay @ V, Max CL: 45ns @ 5V, 15pF Output Function: AB Number of Bits: 4 |
на замовлення 436 шт: термін постачання 21-31 дні (днів) |
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NRVBA320T3G-VF01 | onsemi |
Description: DIODE SCHOTTKY 20V 3A SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 2 mA @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVUD340T4G-VF01 | onsemi |
Description: DIODE STANDARD 400V 3A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVBLS1D7N10MCTXG | onsemi |
Description: PTNG 100V STD TOLLPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 265A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 4.5W (Ta), 303W (Tc) Vgs(th) (Max) @ Id: 4V @ 698µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
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NVBLS1D7N10MCTXG | onsemi |
Description: PTNG 100V STD TOLLPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 265A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 4.5W (Ta), 303W (Tc) Vgs(th) (Max) @ Id: 4V @ 698µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 15855 шт: термін постачання 21-31 дні (днів) |
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NTBLS1D7N10MCTXG | onsemi |
Description: MOSFET, POWER, SINGLE N-CHANNEL,Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 3.4W (Ta), 295W (Tc) Vgs(th) (Max) @ Id: 4V @ 698µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTBLS1D7N10MCTXG | onsemi |
Description: MOSFET, POWER, SINGLE N-CHANNEL,Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 3.4W (Ta), 295W (Tc) Vgs(th) (Max) @ Id: 4V @ 698µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V |
на замовлення 1930 шт: термін постачання 21-31 дні (днів) |
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NTBLS1D5N10MCTXG | onsemi |
Description: MOSFET - POWER, SINGLE, N-CHANNEPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 312A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 3.4W (Ta), 322W (Tc) Vgs(th) (Max) @ Id: 4V @ 799µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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NTBLS1D5N10MCTXG | onsemi |
Description: MOSFET - POWER, SINGLE, N-CHANNEPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 312A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 3.4W (Ta), 322W (Tc) Vgs(th) (Max) @ Id: 4V @ 799µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V |
на замовлення 18365 шт: термін постачання 21-31 дні (днів) |
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NRVS1AFL | onsemi |
Description: DIODE STANDARD 50V 1A SOD123FPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVS1AFL | onsemi |
Description: DIODE STANDARD 50V 1A SOD123FPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V Qualification: AEC-Q101 |
на замовлення 1832 шт: термін постачання 21-31 дні (днів) |
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FAN1086D285X | onsemi |
Description: IC REG LINEAR 2.85V 1.5A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: 25°C ~ 125°C Output Configuration: Positive Voltage - Input (Max): 7.5V Number of Regulators: 1 Supplier Device Package: TO-252AA Voltage - Output (Min/Fixed): 2.85V PSRR: 72dB (120Hz) Voltage Dropout (Max): 1.5V @ 1.5A Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AFGHL30T65RQDN | onsemi |
Description: IGBT FIELD STOP 650V 42A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 39 ns Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 30A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 18ns/68ns Switching Energy: 340µJ (on), 320µJ (off) Test Condition: 400V, 15A, 2.5Ohm, 15V Gate Charge: 37 nC Grade: Automotive Current - Collector (Ic) (Max): 42 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 230.8 W Qualification: AEC-Q101 |
на замовлення 1315 шт: термін постачання 21-31 дні (днів) |
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FSB50450BS | onsemi |
Description: MOSFET IPM 500V 2.2A 23-PWRSMDPackaging: Bulk Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 2.2 A Voltage: 500 V |
на замовлення 1350 шт: термін постачання 21-31 дні (днів) |
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FMS6404CSX | onsemi |
Description: FMS6404 - PRECISION COMPOSITE VIPackaging: Bulk |
на замовлення 7481 шт: термін постачання 21-31 дні (днів) |
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MC74AC74DR2G-Q | onsemi |
Description: DUAL D FLIP-FLOP POSITIVE EDGE T Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Supplier Device Package: 14-SOIC Output Type: Complementary Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 24mA, 24mA Trigger Type: Positive Edge Clock Frequency: 160 MHz Input Capacitance: 4.5 pF Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF Number of Bits per Element: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74AC74DR2G-Q | onsemi |
Description: DUAL D FLIP-FLOP POSITIVE EDGE T Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Supplier Device Package: 14-SOIC Output Type: Complementary Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 24mA, 24mA Trigger Type: Positive Edge Clock Frequency: 160 MHz Input Capacitance: 4.5 pF Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF Number of Bits per Element: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTBG022N120M3S | onsemi |
Description: SIC MOSFET 1200 V 22 MOHM M3S SEPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 20mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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NTBG022N120M3S | onsemi |
Description: SIC MOSFET 1200 V 22 MOHM M3S SEPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 20mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V |
на замовлення 24777 шт: термін постачання 21-31 дні (днів) |
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NTH4L022N120M3S | onsemi |
Description: SIC MOS TO247-4L 22MOHM 1200VPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V Power Dissipation (Max): 352W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 20mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V |
на замовлення 30972 шт: термін постачання 21-31 дні (днів) |
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NVH4L022N120M3S | onsemi |
Description: SIC MOS TO247-4L 22MOHM 1200VPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V Power Dissipation (Max): 352W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 20mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 246803 шт: термін постачання 21-31 дні (днів) |
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NVBG022N120M3S | onsemi |
Description: SIC MOS D2PAK-7L 22MOHM 1200VPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 20mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 12800 шт: термін постачання 21-31 дні (днів) |
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NVBG022N120M3S | onsemi |
Description: SIC MOS D2PAK-7L 22MOHM 1200VPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 20mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 13040 шт: термін постачання 21-31 дні (днів) |
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P3P73Z01BWG-08CR | onsemi |
Description: IC CLK EMI REDUCTION FREQ 8WDFN Packaging: Bulk Package / Case: 8-WDFN Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (2x2) DigiKey Programmable: Not Verified |
на замовлення 246000 шт: термін постачання 21-31 дні (днів) |
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P3P73Z01BWG-08TR | onsemi |
Description: IC CLK EMI REDUCTION FREQ 8TSSOP Packaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP DigiKey Programmable: Not Verified |
на замовлення 42500 шт: термін постачання 21-31 дні (днів) |
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MC74HC151ADTR2G-Q | onsemi |
Description: 8-INPUT MULTIPLEXER Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 8:1 Type: Data Selector/Multiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HC151ADTR2G-Q | onsemi |
Description: 8-INPUT MULTIPLEXER Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 8:1 Type: Data Selector/Multiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HC151ADR2G-Q | onsemi |
Description: IC DATA SELECT/MUX 1X8:1 16-SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 1 x 8:1 Type: Data Selector/Multiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HC151ADR2G-Q | onsemi |
Description: IC DATA SELECT/MUX 1X8:1 16-SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 1 x 8:1 Type: Data Selector/Multiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HC589ADR2G-Q | onsemi |
Description: IC TRI-STATE 8BIT 16-SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 1 Function: Parallel or Serial to Serial Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 16-SOIC Number of Bits per Element: 8 |
на замовлення 55000 шт: термін постачання 21-31 дні (днів) |
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MC74HC589ADR2G-Q | onsemi |
Description: IC TRI-STATE 8BIT 16-SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 1 Function: Parallel or Serial to Serial Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 16-SOIC Number of Bits per Element: 8 |
на замовлення 55000 шт: термін постачання 21-31 дні (днів) |
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MC74HC589ADTR2G-Q | onsemi |
Description: IC TRI-STATE 8BIT 16-TSSOPPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 1 Function: Parallel or Serial to Serial Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 16-TSSOP Number of Bits per Element: 8 |
на замовлення 32500 шт: термін постачання 21-31 дні (днів) |
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MC74HC589ADTR2G-Q | onsemi |
Description: IC TRI-STATE 8BIT 16-TSSOPPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 1 Function: Parallel or Serial to Serial Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 16-TSSOP Number of Bits per Element: 8 |
на замовлення 33197 шт: термін постачання 21-31 дні (днів) |
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AR0830CSSM11SMKA1-CP | onsemi |
Description: 8MP 1/3 CIS SOPackaging: Tray |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AR0830CSSM11SMKA1-CP2 | onsemi |
Description: 8MP 1/3 CIS SOPackaging: Tray |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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| NOIX2SN8000B-LTI | onsemi |
Description: IC IMAGE SENS 8MP MONO 163CLGAPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.1V ~ 1.3V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 4096H x 2160V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 128 |
товару немає в наявності |
В кошику од. на суму грн. |
| N04L63W2AB27I |
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Виробник: onsemi
Description: IC SRAM 4MBIT PARALLEL 48BGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-BGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 48BGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-BGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 99 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 79+ | 271.00 грн |
| N04L63W2AB27I |
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Виробник: onsemi
Description: IC SRAM 4MBIT PARALLEL 48BGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-BGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 48BGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-BGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| NLX1G57CMUTCG |
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Виробник: onsemi
Description: IC LOGIC SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 6-UDFN (1x1)
Number of Circuits: 1
Description: IC LOGIC SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 6-UDFN (1x1)
Number of Circuits: 1
товару немає в наявності
В кошику
од. на суму грн.
| NLX1G57CMUTCG |
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Виробник: onsemi
Description: IC LOGIC SMD
Packaging: Bulk
Package / Case: 6-UFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 6-UDFN (1x1)
Number of Circuits: 1
Description: IC LOGIC SMD
Packaging: Bulk
Package / Case: 6-UFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 6-UDFN (1x1)
Number of Circuits: 1
на замовлення 177000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2664+ | 8.49 грн |
| NCP3902FCCTBG |
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Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 2:1 20WLCSP
Packaging: Tape & Reel (TR)
Features: Sleep Mode
Package / Case: 20-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: USB
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Differential
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 9V ~ 15V
Current - Output (Max): 5A
Ratio - Input:Output: 2:1
Supplier Device Package: 20-WLCSP (1.66x2.26)
Fault Protection: Current Limiting, Over Temperature, UVLO
Description: IC PWR SWITCH P-CHAN 2:1 20WLCSP
Packaging: Tape & Reel (TR)
Features: Sleep Mode
Package / Case: 20-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: USB
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Differential
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 9V ~ 15V
Current - Output (Max): 5A
Ratio - Input:Output: 2:1
Supplier Device Package: 20-WLCSP (1.66x2.26)
Fault Protection: Current Limiting, Over Temperature, UVLO
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 56.70 грн |
| HUF75637S3ST |
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Виробник: onsemi
Description: MOSFET N-CH 100V 44A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 100V 44A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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| FDS4488 |
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на замовлення 256 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.89 грн |
| 10+ | 32.05 грн |
| 100+ | 26.49 грн |
| NLX1G332AMX1TCG |
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Виробник: onsemi
Description: IC GATE OR 1CH 3-INP 6ULLGA
Packaging: Bulk
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-ULLGA (1.45x1)
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE OR 1CH 3-INP 6ULLGA
Packaging: Bulk
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-ULLGA (1.45x1)
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| NLX1G332CMUTCG |
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Виробник: onsemi
Description: IC GATE OR 1CH 3-INP 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-UDFN (1x1)
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE OR 1CH 3-INP 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-UDFN (1x1)
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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| MC74HCT366ADTG |
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Виробник: onsemi
Description: IC BUFFER INVERT 6V 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-TSSOP
Description: IC BUFFER INVERT 6V 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-TSSOP
на замовлення 69491 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1201+ | 18.20 грн |
| MC74HCT366ADG |
![]() |
Виробник: onsemi
Description: IC BUFFER INVERT 6V 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
Description: IC BUFFER INVERT 6V 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
на замовлення 27468 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1014+ | 21.84 грн |
| NLV74HCT366ADTRG |
Виробник: onsemi
Description: IC BUFFER INVERT 6V 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-TSSOP
Description: IC BUFFER INVERT 6V 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-TSSOP
на замовлення 37450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1219+ | 18.20 грн |
| MC74HCT366ADR2G |
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Виробник: onsemi
Description: IC BUFFER INVERT 6V 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
Description: IC BUFFER INVERT 6V 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 16.69 грн |
| 5000+ | 14.70 грн |
| 7500+ | 14.00 грн |
| 12500+ | 12.40 грн |
| 17500+ | 11.97 грн |
| MC74HCT366ADR2G |
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Виробник: onsemi
Description: IC BUFFER INVERT 6V 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
Description: IC BUFFER INVERT 6V 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.87 грн |
| NTD4805NT4G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 12.7A/95A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 1.41W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 12 V
Description: MOSFET N-CH 30V 12.7A/95A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 1.41W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 12 V
на замовлення 588024 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 562+ | 40.38 грн |
| NRVTS5100ETFSTWG |
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Виробник: onsemi
Description: DIODE SCHOTTKY 100V 5A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26.5pF @ 100V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 5A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26.5pF @ 100V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
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| FDFS2P102A | ![]() |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 3.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 3.3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 10 V
Description: MOSFET P-CH 20V 3.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 3.3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 10 V
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| MC74HC1G00DFT1G |
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Виробник: onsemi
Description: IC GATE NAND 1CH 2-INP SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE NAND 1CH 2-INP SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 76537 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.45 грн |
| 98+ | 3.27 грн |
| 112+ | 2.87 грн |
| 134+ | 2.24 грн |
| 250+ | 2.02 грн |
| 500+ | 1.89 грн |
| 1000+ | 1.76 грн |
| FDMS8025S |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 24A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
Description: MOSFET N-CH 30V 24A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 38.10 грн |
| FDMS8025S |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 24A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
Description: MOSFET N-CH 30V 24A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
на замовлення 5328 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.54 грн |
| 10+ | 72.64 грн |
| 100+ | 50.93 грн |
| 500+ | 40.31 грн |
| 1000+ | 37.04 грн |
| SBA100-04J |
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на замовлення 2432 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 533+ | 43.42 грн |
| RHRG5060 |
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Виробник: onsemi
Description: DIODE GEN PURP 600V 50A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Avalanche
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 50 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE GEN PURP 600V 50A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Avalanche
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 50 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 371.80 грн |
| 30+ | 199.69 грн |
| 120+ | 164.82 грн |
| 510+ | 130.68 грн |
| 1020+ | 121.92 грн |
| BAT54ST |
![]() |
Виробник: onsemi
Description: DIODE ARR SCHOT 30V 100MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOT 30V 100MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
товару немає в наявності
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од. на суму грн.
| BAT54ST |
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Виробник: onsemi
Description: DIODE ARR SCHOT 30V 100MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOT 30V 100MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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| SN74LS85D |
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Виробник: onsemi
Description: IC MAG COMPARATOR 4BIT 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Active High
Type: Magnitude Comparator
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 400µA, 8mA
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 45ns @ 5V, 15pF
Output Function: AB
Number of Bits: 4
Description: IC MAG COMPARATOR 4BIT 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Active High
Type: Magnitude Comparator
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 400µA, 8mA
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 45ns @ 5V, 15pF
Output Function: AB
Number of Bits: 4
на замовлення 436 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 198+ | 107.99 грн |
| NRVBA320T3G-VF01 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 20V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 20V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Qualification: AEC-Q101
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| NRVUD340T4G-VF01 |
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Виробник: onsemi
Description: DIODE STANDARD 400V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| NVBLS1D7N10MCTXG |
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Виробник: onsemi
Description: PTNG 100V STD TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 265A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 4.5W (Ta), 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V STD TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 265A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 4.5W (Ta), 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Qualification: AEC-Q101
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 234.26 грн |
| NVBLS1D7N10MCTXG |
![]() |
Виробник: onsemi
Description: PTNG 100V STD TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 265A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 4.5W (Ta), 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V STD TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 265A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 4.5W (Ta), 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Qualification: AEC-Q101
на замовлення 15855 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 567.22 грн |
| 10+ | 369.19 грн |
| 100+ | 268.97 грн |
| 500+ | 212.34 грн |
| 1000+ | 211.70 грн |
| NTBLS1D7N10MCTXG |
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Виробник: onsemi
Description: MOSFET, POWER, SINGLE N-CHANNEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 295W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Description: MOSFET, POWER, SINGLE N-CHANNEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 295W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
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| NTBLS1D7N10MCTXG |
![]() |
Виробник: onsemi
Description: MOSFET, POWER, SINGLE N-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 295W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Description: MOSFET, POWER, SINGLE N-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 295W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 597.03 грн |
| 10+ | 390.64 грн |
| 100+ | 286.04 грн |
| 500+ | 236.19 грн |
| NTBLS1D5N10MCTXG |
![]() |
Виробник: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 312A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 322W (Tc)
Vgs(th) (Max) @ Id: 4V @ 799µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 312A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 322W (Tc)
Vgs(th) (Max) @ Id: 4V @ 799µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 263.24 грн |
| NTBLS1D5N10MCTXG |
![]() |
Виробник: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 312A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 322W (Tc)
Vgs(th) (Max) @ Id: 4V @ 799µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 312A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 322W (Tc)
Vgs(th) (Max) @ Id: 4V @ 799µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V
на замовлення 18365 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 559.76 грн |
| 10+ | 393.99 грн |
| 100+ | 310.27 грн |
| NRVS1AFL |
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Виробник: onsemi
Description: DIODE STANDARD 50V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE STANDARD 50V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
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од. на суму грн.
| NRVS1AFL |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 50V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE STANDARD 50V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
на замовлення 1832 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.15 грн |
| 19+ | 17.22 грн |
| 100+ | 10.87 грн |
| 500+ | 7.60 грн |
| 1000+ | 6.76 грн |
| FAN1086D285X |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 2.85V 1.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 25°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7.5V
Number of Regulators: 1
Supplier Device Package: TO-252AA
Voltage - Output (Min/Fixed): 2.85V
PSRR: 72dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 2.85V 1.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 25°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7.5V
Number of Regulators: 1
Supplier Device Package: TO-252AA
Voltage - Output (Min/Fixed): 2.85V
PSRR: 72dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
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од. на суму грн.
| AFGHL30T65RQDN |
![]() |
Виробник: onsemi
Description: IGBT FIELD STOP 650V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 39 ns
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/68ns
Switching Energy: 340µJ (on), 320µJ (off)
Test Condition: 400V, 15A, 2.5Ohm, 15V
Gate Charge: 37 nC
Grade: Automotive
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 230.8 W
Qualification: AEC-Q101
Description: IGBT FIELD STOP 650V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 39 ns
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/68ns
Switching Energy: 340µJ (on), 320µJ (off)
Test Condition: 400V, 15A, 2.5Ohm, 15V
Gate Charge: 37 nC
Grade: Automotive
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 230.8 W
Qualification: AEC-Q101
на замовлення 1315 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 410.71 грн |
| 30+ | 223.48 грн |
| 120+ | 185.63 грн |
| 510+ | 148.17 грн |
| 1020+ | 142.43 грн |
| FSB50450BS |
![]() |
Виробник: onsemi
Description: MOSFET IPM 500V 2.2A 23-PWRSMD
Packaging: Bulk
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 2.2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2.2A 23-PWRSMD
Packaging: Bulk
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 2.2 A
Voltage: 500 V
на замовлення 1350 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 54+ | 396.21 грн |
| FMS6404CSX |
![]() |
на замовлення 7481 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 256+ | 87.76 грн |
| MC74AC74DR2G-Q |
Виробник: onsemi
Description: DUAL D FLIP-FLOP POSITIVE EDGE T
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 14-SOIC
Output Type: Complementary
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 160 MHz
Input Capacitance: 4.5 pF
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Bits per Element: 1
Description: DUAL D FLIP-FLOP POSITIVE EDGE T
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 14-SOIC
Output Type: Complementary
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 160 MHz
Input Capacitance: 4.5 pF
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Bits per Element: 1
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| MC74AC74DR2G-Q |
Виробник: onsemi
Description: DUAL D FLIP-FLOP POSITIVE EDGE T
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 14-SOIC
Output Type: Complementary
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 160 MHz
Input Capacitance: 4.5 pF
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Bits per Element: 1
Description: DUAL D FLIP-FLOP POSITIVE EDGE T
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 14-SOIC
Output Type: Complementary
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 160 MHz
Input Capacitance: 4.5 pF
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Bits per Element: 1
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од. на суму грн.
| NTBG022N120M3S |
![]() |
Виробник: onsemi
Description: SIC MOSFET 1200 V 22 MOHM M3S SE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
Description: SIC MOSFET 1200 V 22 MOHM M3S SE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 770.83 грн |
| NTBG022N120M3S |
![]() |
Виробник: onsemi
Description: SIC MOSFET 1200 V 22 MOHM M3S SE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
Description: SIC MOSFET 1200 V 22 MOHM M3S SE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
на замовлення 24777 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1378.71 грн |
| 10+ | 948.65 грн |
| 100+ | 908.55 грн |
| NTH4L022N120M3S |
![]() |
Виробник: onsemi
Description: SIC MOS TO247-4L 22MOHM 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 352W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
Description: SIC MOS TO247-4L 22MOHM 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 352W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
на замовлення 30972 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1387.82 грн |
| 30+ | 837.92 грн |
| 120+ | 749.08 грн |
| NVH4L022N120M3S |
![]() |
Виробник: onsemi
Description: SIC MOS TO247-4L 22MOHM 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 352W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
Qualification: AEC-Q101
Description: SIC MOS TO247-4L 22MOHM 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 352W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
Qualification: AEC-Q101
на замовлення 246803 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3007.49 грн |
| 30+ | 1983.04 грн |
| NVBG022N120M3S |
![]() |
Виробник: onsemi
Description: SIC MOS D2PAK-7L 22MOHM 1200V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 22MOHM 1200V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V
Qualification: AEC-Q101
на замовлення 12800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 1319.08 грн |
| NVBG022N120M3S |
![]() |
Виробник: onsemi
Description: SIC MOS D2PAK-7L 22MOHM 1200V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 22MOHM 1200V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V
Qualification: AEC-Q101
на замовлення 13040 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2151.28 грн |
| 10+ | 1510.32 грн |
| 100+ | 1270.22 грн |
| P3P73Z01BWG-08CR |
Виробник: onsemi
Description: IC CLK EMI REDUCTION FREQ 8WDFN
Packaging: Bulk
Package / Case: 8-WDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (2x2)
DigiKey Programmable: Not Verified
Description: IC CLK EMI REDUCTION FREQ 8WDFN
Packaging: Bulk
Package / Case: 8-WDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (2x2)
DigiKey Programmable: Not Verified
на замовлення 246000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 231+ | 103.05 грн |
| P3P73Z01BWG-08TR |
Виробник: onsemi
Description: IC CLK EMI REDUCTION FREQ 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSSOP
DigiKey Programmable: Not Verified
Description: IC CLK EMI REDUCTION FREQ 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSSOP
DigiKey Programmable: Not Verified
на замовлення 42500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 207+ | 115.74 грн |
| MC74HC151ADTR2G-Q |
Виробник: onsemi
Description: 8-INPUT MULTIPLEXER
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Data Selector/Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Description: 8-INPUT MULTIPLEXER
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Data Selector/Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
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В кошику
од. на суму грн.
| MC74HC151ADTR2G-Q |
Виробник: onsemi
Description: 8-INPUT MULTIPLEXER
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Data Selector/Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Description: 8-INPUT MULTIPLEXER
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Data Selector/Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
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од. на суму грн.
| MC74HC151ADR2G-Q |
![]() |
Виробник: onsemi
Description: IC DATA SELECT/MUX 1X8:1 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Data Selector/Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Description: IC DATA SELECT/MUX 1X8:1 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Data Selector/Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
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од. на суму грн.
| MC74HC151ADR2G-Q |
![]() |
Виробник: onsemi
Description: IC DATA SELECT/MUX 1X8:1 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Data Selector/Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Description: IC DATA SELECT/MUX 1X8:1 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Data Selector/Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
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од. на суму грн.
| MC74HC589ADR2G-Q |
![]() |
Виробник: onsemi
Description: IC TRI-STATE 8BIT 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
Description: IC TRI-STATE 8BIT 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
на замовлення 55000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 14.74 грн |
| 5000+ | 13.80 грн |
| 7500+ | 13.59 грн |
| 12500+ | 12.55 грн |
| 17500+ | 12.43 грн |
| 25000+ | 12.31 грн |
| MC74HC589ADR2G-Q |
![]() |
Виробник: onsemi
Description: IC TRI-STATE 8BIT 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
Description: IC TRI-STATE 8BIT 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
на замовлення 55000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.12 грн |
| 15+ | 22.65 грн |
| 25+ | 20.22 грн |
| 100+ | 16.46 грн |
| 250+ | 15.26 грн |
| 500+ | 14.54 грн |
| 1000+ | 13.81 грн |
| MC74HC589ADTR2G-Q |
![]() |
Виробник: onsemi
Description: IC TRI-STATE 8BIT 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-TSSOP
Number of Bits per Element: 8
Description: IC TRI-STATE 8BIT 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-TSSOP
Number of Bits per Element: 8
на замовлення 32500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 15.14 грн |
| 5000+ | 14.17 грн |
| 7500+ | 13.96 грн |
| 12500+ | 12.89 грн |
| 17500+ | 12.77 грн |
| 25000+ | 12.65 грн |
| MC74HC589ADTR2G-Q |
![]() |
Виробник: onsemi
Description: IC TRI-STATE 8BIT 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-TSSOP
Number of Bits per Element: 8
Description: IC TRI-STATE 8BIT 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-TSSOP
Number of Bits per Element: 8
на замовлення 33197 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.95 грн |
| 14+ | 23.20 грн |
| 25+ | 20.73 грн |
| 100+ | 16.89 грн |
| 250+ | 15.67 грн |
| 500+ | 14.93 грн |
| 1000+ | 14.19 грн |
| AR0830CSSM11SMKA1-CP |
![]() |
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2201.79 грн |
| 10+ | 1766.92 грн |
| 25+ | 1565.01 грн |
| 80+ | 1421.32 грн |
| 440+ | 1326.57 грн |
| AR0830CSSM11SMKA1-CP2 |
![]() |
на замовлення 250 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2471.74 грн |
| 10+ | 1983.25 грн |
| 25+ | 1756.54 грн |
| 100+ | 1595.28 грн |
| NOIX2SN8000B-LTI |
![]() |
Виробник: onsemi
Description: IC IMAGE SENS 8MP MONO 163CLGA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128
Description: IC IMAGE SENS 8MP MONO 163CLGA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128
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