| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SPS3609RLRA | onsemi |
Description: SS T092 GP XSTR NPN SPCL Packaging: Bulk |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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TIP117TU | onsemi |
 Description: TRANS PNP DARL 100V 2A TO-220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TVS8151MUTBG | onsemi |
Description: TVS DIODE 15VRWM Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TVS8151MUTBG | onsemi |
Description: TVS DIODE 15VRWM Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TVS8151MUTBG | onsemi |
Description: TVS DIODE 15VRWM Packaging: Bulk |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NVMFD027N10MCLT1G | onsemi |
Description: MOSFET 2N-CH 100V 7.4A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 46W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs(th) (Max) @ Id: 3V @ 38µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFD027N10MCLT1G | onsemi |
Description: MOSFET 2N-CH 100V 7.4A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 46W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs(th) (Max) @ Id: 3V @ 38µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2777 шт: термін постачання 21-31 дні (днів) |
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NVTYS027N10MCLTWG | onsemi |
Description: PTNG 100V LL, SINGLE NCH, LFPAK3 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V Power Dissipation (Max): 3.2W (Ta), 51W (Tc) Vgs(th) (Max) @ Id: 3V @ 45µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVTYS027N10MCLTWG | onsemi |
Description: PTNG 100V LL, SINGLE NCH, LFPAK3 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V Power Dissipation (Max): 3.2W (Ta), 51W (Tc) Vgs(th) (Max) @ Id: 3V @ 45µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMJD027N10MCLTWG | onsemi |
Description: MOSFET 2N-CH 100V 7.4A 8LFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 46W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 50V Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V Vgs(th) (Max) @ Id: 3V @ 38µA Supplier Device Package: 8-LFPAK Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMJD027N10MCLTWG | onsemi |
Description: MOSFET 2N-CH 100V 7.4A 8LFPAK Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 46W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 50V Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V Vgs(th) (Max) @ Id: 3V @ 38µA Supplier Device Package: 8-LFPAK Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDP8030L | onsemi |
Description: MOSFET N-CH 30V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V |
на замовлення 1023 шт: термін постачання 21-31 дні (днів) |
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FDP8030L | onsemi |
Description: MOSFET N-CH 30V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQI4N80TU | onsemi |
Description: MOSFET N-CH 800V 3.9A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V Power Dissipation (Max): 3.13W (Ta), 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NDC3105LT1G | onsemi |
Description: IC PWR DRIVER SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) |
на замовлення 740100 шт: термін постачання 21-31 дні (днів) |
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CNY17F2M | onsemi |
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 63% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 125% @ 10mA Supplier Device Package: 6-DIP Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 184097 шт: термін постачання 21-31 дні (днів) |
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STK984-091A-E | onsemi |
Description: MOD INVERTER 3PHASE AUTO Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTHD4508NT1G | onsemi |
Description: MOSFET 2N-CH 20V 3A CHIPFET Packaging: Bulk Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.13W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ |
на замовлення 17635 шт: термін постачання 21-31 дні (днів) |
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NVJD5121NT2G | onsemi |
Description: MOSFET 2N-CH 60V 0.295A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 295mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVJD5121NT2G | onsemi |
Description: MOSFET 2N-CH 60V 0.295A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 295mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2841 шт: термін постачання 21-31 дні (днів) |
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GBU8KS | onsemi |
Description: BRIDGE RECT 1PHASE 800V 8A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 1548 шт: термін постачання 21-31 дні (днів) |
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| SBH15-03-TR-E | onsemi |
Description: DIODE SCHOTTKY 1.5A 30V Packaging: Bulk |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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NTHD5905T1 | onsemi |
Description: MOSFET 2P-CH 8V 3A CHIPFET Packaging: Bulk Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: ChipFET™ |
на замовлення 408000 шт: термін постачання 21-31 дні (днів) |
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NTJD2152PT2G | onsemi |
Description: MOSFET 2P-CH 8V 0.775A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 775mA Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 8V Rds On (Max) @ Id, Vgs: 300mOhm @ 570mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMFD5C470NWFT1G | onsemi |
Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 28W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMFD5C470NWFT1G | onsemi |
Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 28W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1090 шт: термін постачання 21-31 дні (днів) |
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74F675APC | onsemi |
Description: IC REG SER-IN SER-PAR OUT 24-DIP Packaging: Tube Package / Case: 24-DIP (0.600", 15.24mm) Output Type: Tri-State Mounting Type: Through Hole Number of Elements: 1 Function: Serial to Parallel, Serial Logic Type: Shift Register Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: 24-PDIP Number of Bits per Element: 16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74F676SCX | onsemi |
Description: IC SHIFT REGISTER SER/PAR 24SOIC Packaging: Tape & Reel (TR) Package / Case: 24-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 1 Function: Parallel or Serial to Serial Logic Type: Shift Register Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: 24-SOP Number of Bits per Element: 16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74F676PC | onsemi |
Description: IC SHIFT REGISTER SER/PAR 24DIP Packaging: Tube Package / Case: 24-DIP (0.600", 15.24mm) Output Type: Tri-State Mounting Type: Through Hole Number of Elements: 1 Function: Parallel or Serial to Serial Logic Type: Shift Register Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: 24-PDIP Number of Bits per Element: 16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74F676SPC | onsemi |
Description: IC SHIFT REGISTER SER/PAR 24DIP Packaging: Tube Package / Case: 24-DIP (0.300", 7.62mm) Output Type: Tri-State Mounting Type: Through Hole Number of Elements: 1 Function: Parallel or Serial to Serial Logic Type: Shift Register Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: 24-PDIP Number of Bits per Element: 16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74F676SC | onsemi |
Description: IC SHIFT REGISTER SER/PAR 24SOIC Packaging: Tube Package / Case: 24-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 1 Function: Parallel or Serial to Serial Logic Type: Shift Register Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: 24-SOP Number of Bits per Element: 16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LM7915CT | onsemi |
Description: IC REG LINEAR -15V 1A TO220-3 Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Negative Current - Quiescent (Iq): 6 mA Voltage - Input (Max): -35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): -15V PSRR: 60dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTF3055-160T1 | onsemi |
Description: MOSFET N-CH 60V 2A SOT223 Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 (TO-261) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
на замовлення 8546 шт: термін постачання 21-31 дні (днів) |
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MMBZ33VALT1 | onsemi |
Description: TVS ZENER DUAL CA 40W 33V SOT23 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SMQA2000T1G | onsemi |
Description: TVS DIODE Packaging: Bulk Mounting Type: Surface Mount |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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1SMC70AT3 | onsemi |
Description: TVS 1500W 70V UNIDIRECT SMC Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1SMC70AT3 | onsemi |
Description: TVS 1500W 70V UNIDIRECT SMC Packaging: Bulk |
на замовлення 2373 шт: термін постачання 21-31 дні (днів) |
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MPTE-018 | onsemi |
Description: DIODE TVS SINGLE UNI-DIR 18V 1.5 Packaging: Bulk |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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2N5323 | onsemi |
Description: TRANS PNP 50V 2A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 1.2V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 4V Supplier Device Package: TO-5 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 10 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N5322 | onsemi |
Description: TRANS PNP 75V 2A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V Supplier Device Package: TO-39 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 75 V Power - Max: 10 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N5320 | onsemi |
Description: TRANS NPN 75V 2A TO-39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V Supplier Device Package: TO-39 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 75 V Power - Max: 10 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KA79M05TU | onsemi |
Description: IC REG LINEAR -5V 500MA TO220-3 Packaging: Bulk Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 500mA Operating Temperature: 0°C ~ 125°C Output Configuration: Negative Current - Quiescent (Iq): 6 mA Voltage - Input (Max): -35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): -5V PSRR: 60dB (120Hz) Voltage Dropout (Max): 1.1V @ 500mA Protection Features: Over Temperature, Short Circuit |
на замовлення 984 шт: термін постачання 21-31 дні (днів) |
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TIP47 | onsemi |
Description: TRANS NPN 250V 1A TO-220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Frequency - Transition: 10MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TIP48TU | onsemi |
Description: TRANS NPN 300V 1A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Frequency - Transition: 10MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVXK2VR40WXT2 | onsemi |
Description: MOSFET 6N-CH 1200V 55A APM32 Packaging: Tube Package / Case: 32-PowerDIP Module (1.449", 36.80mm) Mounting Type: Through Hole Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 319W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: APM32 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 73 шт: термін постачання 21-31 дні (днів) |
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NCP1343ENAAEBBD1R2G | onsemi |
Description: HIGH FREQUENCY QUASI-RESONANT FL Packaging: Cut Tape (CT) Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 75% Frequency - Switching: 500kHz Internal Switch(s): No Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9V ~ 28V Supplier Device Package: 9-SOIC Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 17 V Control Features: Frequency Control, Soft Start |
на замовлення 2460 шт: термін постачання 21-31 дні (днів) |
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1SMC26AT3 | onsemi |
Description: TVS DIODE 26V 42.1V SMC Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FAN302HLMY | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Duty Cycle: 67% Frequency - Switching: 85kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 5V ~ 25V Supplier Device Package: 8-SOIC Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 16 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KSD1417TU | onsemi |
Description: TRANS NPN DARL 60V 7A TO-220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN - Darlington Vce Saturation (Max) @ Ib, Ic: 2V @ 14mA, 7A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V Supplier Device Package: TO-220F-3 Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NSCT2222ALT3G | onsemi |
Description: TRANS NPN 40V 0.6A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 225 mW |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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LM2931CT | onsemi |
Description: IC REG LIN POS ADJ 100MA TO220-5 Packaging: Tube Package / Case: TO-220-5 Output Type: Adjustable Mounting Type: Through Hole Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: TO-220-5 Voltage - Output (Max): 29.5V Voltage - Output (Min/Fixed): 2.7V Voltage Dropout (Max): 0.6V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 6 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTD6415AN-1G | onsemi |
Description: MOSFET N-CH 100V 23A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 23A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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| MPS8099 | onsemi |
Description: TRANSISTOR NPN GP BIPO 80V TO-92 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MUR405G | onsemi |
Description: DIODE GEN PURP 50V 4A AXIAL Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
на замовлення 1464 шт: термін постачання 21-31 дні (днів) |
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NVMFS6B14NLT3G | onsemi |
Description: MOSFET N-CH 100V 11A/55A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KA75330ZTA | onsemi |
Description: IC SUPERVISOR 1 CHANNEL TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -25°C ~ 85°C (TA) Number of Voltages Monitored: 1 Voltage - Threshold: 3.3V Supplier Device Package: TO-92-3 DigiKey Programmable: Not Verified |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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NTMFS005P03P8ZST1G | onsemi |
Description: PT8P PORTFOLIO EXPANSION Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTMFS005P03P8ZST1G | onsemi |
Description: PT8P PORTFOLIO EXPANSION Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 15 V |
на замовлення 1268 шт: термін постачання 21-31 дні (днів) |
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MCH6613-TL-E | onsemi |
Description: MOSFET N/P-CH 30V 0.35A 6MCPH Packaging: Bulk Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA, 200mA Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V FET Feature: Logic Level Gate Supplier Device Package: 6-MCPH |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NUS2401SNT1 | onsemi |
Description: TRANS 2NPN/1PNP PREBIAS SC74 Packaging: Bulk Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN, 1 PNP - Pre-Biased Power - Max: 350mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA / 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Resistor - Base (R1): 175Ohms, 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-74 |
на замовлення 5990 шт: термін постачання 21-31 дні (днів) |
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| SPS3609RLRA |
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 919+ | 25.24 грн |
| TIP117TU |
|
Виробник: onsemi
Description: TRANS PNP DARL 100V 2A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS PNP DARL 100V 2A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
товару немає в наявності
В кошику
од. на суму грн.
| TVS8151MUTBG |
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1396+ | 16.06 грн |
| NVMFD027N10MCLT1G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 100V 7.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 7.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 47.82 грн |
| NVMFD027N10MCLT1G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 100V 7.4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 7.4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2777 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 159.25 грн |
| 10+ | 98.08 грн |
| 100+ | 66.30 грн |
| 500+ | 49.43 грн |
| NVTYS027N10MCLTWG |
|
Виробник: onsemi
Description: PTNG 100V LL, SINGLE NCH, LFPAK3
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Power Dissipation (Max): 3.2W (Ta), 51W (Tc)
Vgs(th) (Max) @ Id: 3V @ 45µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V LL, SINGLE NCH, LFPAK3
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Power Dissipation (Max): 3.2W (Ta), 51W (Tc)
Vgs(th) (Max) @ Id: 3V @ 45µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NVTYS027N10MCLTWG |
|
Виробник: onsemi
Description: PTNG 100V LL, SINGLE NCH, LFPAK3
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Power Dissipation (Max): 3.2W (Ta), 51W (Tc)
Vgs(th) (Max) @ Id: 3V @ 45µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V LL, SINGLE NCH, LFPAK3
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Power Dissipation (Max): 3.2W (Ta), 51W (Tc)
Vgs(th) (Max) @ Id: 3V @ 45µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 50 V
Qualification: AEC-Q101
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| NVMJD027N10MCLTWG |
|
Виробник: onsemi
Description: MOSFET 2N-CH 100V 7.4A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 7.4A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
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| NVMJD027N10MCLTWG |
|
Виробник: onsemi
Description: MOSFET 2N-CH 100V 7.4A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 7.4A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
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| FDP8030L |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V
Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V
на замовлення 1023 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 475.19 грн |
| 10+ | 391.99 грн |
| 100+ | 326.69 грн |
| 500+ | 270.51 грн |
| 1000+ | 243.46 грн |
| FDP8030L |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V
Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V
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| FQI4N80TU |
|
Виробник: onsemi
Description: MOSFET N-CH 800V 3.9A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Description: MOSFET N-CH 800V 3.9A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
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| NDC3105LT1G |
Виробник: onsemi
Description: IC PWR DRIVER SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Description: IC PWR DRIVER SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
на замовлення 740100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1649+ | 14.71 грн |
| CNY17F2M |
|
Виробник: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 63% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 63% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 184097 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.06 грн |
| 50+ | 24.57 грн |
| 100+ | 21.94 грн |
| 500+ | 16.47 грн |
| 1000+ | 15.20 грн |
| 2000+ | 14.17 грн |
| 5000+ | 12.86 грн |
| 10000+ | 12.22 грн |
| 25000+ | 11.55 грн |
| NTHD4508NT1G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 20V 3A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Description: MOSFET 2N-CH 20V 3A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
на замовлення 17635 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 594+ | 39.71 грн |
| NVJD5121NT2G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 60V 0.295A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 0.295A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
| NVJD5121NT2G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 60V 0.295A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 0.295A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2841 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 22.14 грн |
| 23+ | 14.43 грн |
| 100+ | 9.69 грн |
| 500+ | 7.01 грн |
| 1000+ | 6.31 грн |
| GBU8KS |
|
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 800V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 1548 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 191.61 грн |
| 20+ | 105.30 грн |
| 100+ | 81.51 грн |
| 500+ | 61.53 грн |
| 1000+ | 56.72 грн |
| SBH15-03-TR-E |
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1902+ | 12.24 грн |
| NTHD5905T1 |
|
Виробник: onsemi
Description: MOSFET 2P-CH 8V 3A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: ChipFET™
Description: MOSFET 2P-CH 8V 3A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: ChipFET™
на замовлення 408000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1902+ | 12.15 грн |
| NTJD2152PT2G |
|
Виробник: onsemi
Description: MOSFET 2P-CH 8V 0.775A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 775mA
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 8V
Rds On (Max) @ Id, Vgs: 300mOhm @ 570mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Description: MOSFET 2P-CH 8V 0.775A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 775mA
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 8V
Rds On (Max) @ Id, Vgs: 300mOhm @ 570mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
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од. на суму грн.
| NVMFD5C470NWFT1G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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| NVMFD5C470NWFT1G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1090 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 186.50 грн |
| 10+ | 115.63 грн |
| 100+ | 79.09 грн |
| 500+ | 59.52 грн |
| 74F675APC |
|
Виробник: onsemi
Description: IC REG SER-IN SER-PAR OUT 24-DIP
Packaging: Tube
Package / Case: 24-DIP (0.600", 15.24mm)
Output Type: Tri-State
Mounting Type: Through Hole
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-PDIP
Number of Bits per Element: 16
Description: IC REG SER-IN SER-PAR OUT 24-DIP
Packaging: Tube
Package / Case: 24-DIP (0.600", 15.24mm)
Output Type: Tri-State
Mounting Type: Through Hole
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-PDIP
Number of Bits per Element: 16
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| 74F676SCX |
|
Виробник: onsemi
Description: IC SHIFT REGISTER SER/PAR 24SOIC
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-SOP
Number of Bits per Element: 16
Description: IC SHIFT REGISTER SER/PAR 24SOIC
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-SOP
Number of Bits per Element: 16
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| 74F676PC |
|
Виробник: onsemi
Description: IC SHIFT REGISTER SER/PAR 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.600", 15.24mm)
Output Type: Tri-State
Mounting Type: Through Hole
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-PDIP
Number of Bits per Element: 16
Description: IC SHIFT REGISTER SER/PAR 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.600", 15.24mm)
Output Type: Tri-State
Mounting Type: Through Hole
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-PDIP
Number of Bits per Element: 16
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| 74F676SPC |
|
Виробник: onsemi
Description: IC SHIFT REGISTER SER/PAR 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-PDIP
Number of Bits per Element: 16
Description: IC SHIFT REGISTER SER/PAR 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-PDIP
Number of Bits per Element: 16
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| 74F676SC |
|
Виробник: onsemi
Description: IC SHIFT REGISTER SER/PAR 24SOIC
Packaging: Tube
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-SOP
Number of Bits per Element: 16
Description: IC SHIFT REGISTER SER/PAR 24SOIC
Packaging: Tube
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 24-SOP
Number of Bits per Element: 16
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| LM7915CT |
|
Виробник: onsemi
Description: IC REG LINEAR -15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): -15V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR -15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): -15V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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| NTF3055-160T1 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 2A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Description: MOSFET N-CH 60V 2A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
на замовлення 8546 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2019+ | 11.03 грн |
| SMQA2000T1G |
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.15 грн |
| 1SMC70AT3 |
|
на замовлення 2373 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1665+ | 14.61 грн |
| MPTE-018 |
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1567+ | 15.49 грн |
| 2N5323 |
|
Виробник: onsemi
Description: TRANS PNP 50V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 4V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 10 W
Description: TRANS PNP 50V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 4V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 10 W
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| 2N5322 |
|
Виробник: onsemi
Description: TRANS PNP 75V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 10 W
Description: TRANS PNP 75V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 10 W
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| 2N5320 |
|
Виробник: onsemi
Description: TRANS NPN 75V 2A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 10 W
Description: TRANS NPN 75V 2A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 10 W
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| KA79M05TU |
|
Виробник: onsemi
Description: IC REG LINEAR -5V 500MA TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): -5V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 1.1V @ 500mA
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR -5V 500MA TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): -5V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 1.1V @ 500mA
Protection Features: Over Temperature, Short Circuit
на замовлення 984 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 534+ | 41.19 грн |
| TIP47 |
|
Виробник: onsemi
Description: TRANS NPN 250V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2 W
Description: TRANS NPN 250V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2 W
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| TIP48TU |
|
Виробник: onsemi
Description: TRANS NPN 300V 1A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 2 W
Description: TRANS NPN 300V 1A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 2 W
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| NVXK2VR40WXT2 |
|
Виробник: onsemi
Description: MOSFET 6N-CH 1200V 55A APM32
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.449", 36.80mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 319W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V
Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: APM32
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 6N-CH 1200V 55A APM32
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.449", 36.80mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 319W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V
Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: APM32
Grade: Automotive
Qualification: AEC-Q101
на замовлення 73 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6564.98 грн |
| 10+ | 5196.46 грн |
| NCP1343ENAAEBBD1R2G |
|
Виробник: onsemi
Description: HIGH FREQUENCY QUASI-RESONANT FL
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 500kHz
Internal Switch(s): No
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 28V
Supplier Device Package: 9-SOIC
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 17 V
Control Features: Frequency Control, Soft Start
Description: HIGH FREQUENCY QUASI-RESONANT FL
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 500kHz
Internal Switch(s): No
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 28V
Supplier Device Package: 9-SOIC
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 17 V
Control Features: Frequency Control, Soft Start
на замовлення 2460 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 104.75 грн |
| 10+ | 90.04 грн |
| 25+ | 85.42 грн |
| 100+ | 61.54 грн |
| 250+ | 54.39 грн |
| 500+ | 51.52 грн |
| 1000+ | 39.42 грн |
| FAN302HLMY |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 67%
Frequency - Switching: 85kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5V ~ 25V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 67%
Frequency - Switching: 85kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5V ~ 25V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
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| KSD1417TU |
Виробник: onsemi
Description: TRANS NPN DARL 60V 7A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 2V @ 14mA, 7A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: TRANS NPN DARL 60V 7A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 2V @ 14mA, 7A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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| NSCT2222ALT3G |
|
Виробник: onsemi
Description: TRANS NPN 40V 0.6A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 225 mW
Description: TRANS NPN 40V 0.6A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 225 mW
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11539+ | 2.44 грн |
| LM2931CT |
|
Виробник: onsemi
Description: IC REG LIN POS ADJ 100MA TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220-5
Voltage - Output (Max): 29.5V
Voltage - Output (Min/Fixed): 2.7V
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
Description: IC REG LIN POS ADJ 100MA TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220-5
Voltage - Output (Max): 29.5V
Voltage - Output (Min/Fixed): 2.7V
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
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| NTD6415AN-1G |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 23A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 23A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET N-CH 100V 23A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 23A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 750+ | 40.24 грн |
| MUR405G |
|
Виробник: onsemi
Description: DIODE GEN PURP 50V 4A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 4A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 1464 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1464+ | 16.06 грн |
| NVMFS6B14NLT3G |
Виробник: onsemi
Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
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| KA75330ZTA |
|
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -25°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.3V
Supplier Device Package: TO-92-3
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -25°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.3V
Supplier Device Package: TO-92-3
DigiKey Programmable: Not Verified
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2273+ | 9.49 грн |
| NTMFS005P03P8ZST1G |
|
Виробник: onsemi
Description: PT8P PORTFOLIO EXPANSION
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 15 V
Description: PT8P PORTFOLIO EXPANSION
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 15 V
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од. на суму грн.
| NTMFS005P03P8ZST1G |
|
Виробник: onsemi
Description: PT8P PORTFOLIO EXPANSION
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 15 V
Description: PT8P PORTFOLIO EXPANSION
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 15 V
на замовлення 1268 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 166.91 грн |
| 10+ | 102.59 грн |
| 100+ | 69.48 грн |
| 500+ | 51.90 грн |
| MCH6613-TL-E |
|
Виробник: onsemi
Description: MOSFET N/P-CH 30V 0.35A 6MCPH
Packaging: Bulk
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MCPH
Description: MOSFET N/P-CH 30V 0.35A 6MCPH
Packaging: Bulk
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MCPH
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2219+ | 10.71 грн |
| NUS2401SNT1 |
|
Виробник: onsemi
Description: TRANS 2NPN/1PNP PREBIAS SC74
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 1 PNP - Pre-Biased
Power - Max: 350mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA / 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Resistor - Base (R1): 175Ohms, 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-74
Description: TRANS 2NPN/1PNP PREBIAS SC74
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 1 PNP - Pre-Biased
Power - Max: 350mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA / 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Resistor - Base (R1): 175Ohms, 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-74
на замовлення 5990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1480+ | 15.30 грн |