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ADT7483AARQZ-R7 ADT7483AARQZ-R7 onsemi adt7483a-d.pdf Description: SENSOR DIGITAL 0C-127C 16QSOP
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Packaging: Bulk
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Digital, Local/Remote
Supplier Device Package: 16-QSOP
Test Condition: 0°C ~ 70°C (-40°C ~ 100°C)
Accuracy - Highest (Lowest): ±1°C (±2.5°C)
Sensing Temperature - Local: 0°C ~ 127°C
Sensing Temperature - Remote: -64°C ~ 191°C
на замовлення 11841 шт:
термін постачання 21-31 дні (днів)
75+320.59 грн
Мінімальне замовлення: 75
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FQI11N40TU onsemi FQB11N40.pdf Description: MOSFET N-CH 400V 11.4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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FAN4147SX FAN4147SX onsemi fan4147-d.pdf Description: IC CTLR LOW PWR AC GFI 6-SSOT
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Applications: Ground Fault Protection
Current - Supply: 400µA
Supplier Device Package: SuperSOT™-6
на замовлення 62394 шт:
термін постачання 21-31 дні (днів)
669+36.47 грн
Мінімальне замовлення: 669
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FDG327NZ FDG327NZ onsemi fdg327nz-d.pdf Description: MOSFET N-CH 20V 1.5A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 10 V
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FDG327NZ FDG327NZ onsemi fdg327nz-d.pdf Description: MOSFET N-CH 20V 1.5A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 10 V
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BZX85C36 BZX85C36 onsemi BZX85C3V3-C56.pdf Description: DIODE ZENER 36V 1W DO41
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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NSR20406NXT5G onsemi NSR20406-D.PDF Description: DIODE SCHOTTKY 40V 2A 2DSN
Packaging: Bulk
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 ns
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 2V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
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NRVTS12120EMFST1G NRVTS12120EMFST1G onsemi nts12120emfs-d.pdf Description: DIODE SCHOTTKY 120V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 120 V
Qualification: AEC-Q101
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NRVTS12120EMFST1G NRVTS12120EMFST1G onsemi nts12120emfs-d.pdf Description: DIODE SCHOTTKY 120V 12A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 120 V
Qualification: AEC-Q101
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
4+105.60 грн
10+68.23 грн
100+47.68 грн
500+36.11 грн
Мінімальне замовлення: 4
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FQU3N40TU FQU3N40TU onsemi FQD3N40%2C%20FQU3N40.pdf Description: MOSFET N-CH 400V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
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FQD3N40TF FQD3N40TF onsemi FAIRS17803-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 400V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
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MMDF3N02HDR2 MMDF3N02HDR2 onsemi mmdf3n02hd-d.pdf Description: MOSFET N-CH 20V 3.8A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 16 V
на замовлення 16012 шт:
термін постачання 21-31 дні (днів)
452+52.24 грн
Мінімальне замовлення: 452
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NTH4LN041N60S5H onsemi NTH4LN041N60S5H-D.PDF Description: MOSFETPOWER, SINGLE, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 28.5A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.7mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6213 pF @ 400 V
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MCH4016-TL-H MCH4016-TL-H onsemi mch4016-d.pdf Description: RF TRANS NPN 12V 10GHZ 4-MCPH
Packaging: Bulk
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18dB
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: 4-MCPH
на замовлення 174000 шт:
термін постачання 21-31 дні (днів)
1428+15.33 грн
Мінімальне замовлення: 1428
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TIP50 TIP50 onsemi tip47-d.pdf Description: TRANS NPN 400V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
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MC74VHC257DTG MC74VHC257DTG onsemi mc74vhc257-d.pdf Description: IC MULTIPLEXER 4 X 2:1 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
на замовлення 61380 шт:
термін постачання 21-31 дні (днів)
1343+17.93 грн
Мінімальне замовлення: 1343
В кошику  од. на суму  грн.
FAN7392N FAN7392N onsemi fan7392-d.pdf Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-MDIP
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.5V, 9.5V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
3+151.58 грн
10+107.76 грн
25+98.18 грн
100+82.26 грн
250+77.55 грн
500+74.72 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1N4002G 1N4002G onsemi 1n4001-d.pdf Description: DIODE STANDARD 100V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 28119 шт:
термін постачання 21-31 дні (днів)
27+12.77 грн
48+6.89 грн
100+6.77 грн
500+4.66 грн
1000+3.70 грн
2000+3.24 грн
5000+2.81 грн
10000+2.65 грн
Мінімальне замовлення: 27
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NSVBCP5316MTWG NSVBCP5316MTWG onsemi bcp53m-d.pdf Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
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BCP5316MTWG BCP5316MTWG onsemi bcp53m-d.pdf Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
6+57.06 грн
10+34.03 грн
100+21.95 грн
500+15.73 грн
1000+14.16 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
1N4006G 1N4006G onsemi 1n4001-d.pdf Description: DIODE STANDARD 800V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 7545 шт:
термін постачання 21-31 дні (днів)
27+12.77 грн
41+8.04 грн
100+6.65 грн
500+4.58 грн
1000+3.56 грн
2000+3.02 грн
5000+2.69 грн
Мінімальне замовлення: 27
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NVD5890NT4G-VF01 NVD5890NT4G-VF01 onsemi NVD5890N-D.PDF Description: POWER MOSFET 40V, 123A, 3.7 MOHM
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Qualification: AEC-Q101
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NVD5805NT4G-VF01 NVD5805NT4G-VF01 onsemi NTD5805N-D.PDF Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Qualification: AEC-Q101
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SVD5867NLT4G-UM SVD5867NLT4G-UM onsemi NVD5867NL-D.PDF Description: SINGLE N-CHANNEL POWER MOSFET 60
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
Qualification: AEC-Q101
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FDU5N50NZTU onsemi fdu5n50nztu-d.pdf Description: MOSFET N-CH 500V 4A DPAK3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK3 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
на замовлення 13509 шт:
термін постачання 21-31 дні (днів)
620+37.99 грн
Мінімальне замовлення: 620
В кошику  од. на суму  грн.
NRVBA320NT3G NRVBA320NT3G onsemi mbra320-d.pdf Description: DIODE SCHOTTKY 20V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Qualification: AEC-Q101
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NRVBA320NT3G NRVBA320NT3G onsemi mbra320-d.pdf Description: DIODE SCHOTTKY 20V 3A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Qualification: AEC-Q101
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1N4001G 1N4001G onsemi 1n4001-d.pdf Description: DIODE STANDARD 50V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 41566 шт:
термін постачання 21-31 дні (днів)
32+10.94 грн
50+6.68 грн
100+6.66 грн
500+4.59 грн
1000+3.42 грн
2000+3.31 грн
5000+2.88 грн
10000+2.45 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
1N4005G 1N4005G onsemi 1n4001-d.pdf Description: DIODE STANDARD 600V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 22453 шт:
термін постачання 21-31 дні (днів)
34+10.21 грн
55+6.05 грн
100+5.84 грн
500+3.96 грн
1000+2.86 грн
2000+2.48 грн
5000+2.27 грн
10000+2.21 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
NVMFS5C404NLWFET3G NVMFS5C404NLWFET3G onsemi NVMFS5C404NL-D.PDF Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Qualification: AEC-Q101
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NVBG023N065M3S onsemi Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
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NVBG023N065M3S onsemi Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
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NXH010P90MNF1PTG NXH010P90MNF1PTG onsemi nxh010p90mnf1-d.pdf Description: MOSFET 2N-CH 900V 154A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 328W (Tj)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
1+9940.71 грн
28+8386.47 грн
В кошику  од. на суму  грн.
NXH010P120MNF1PTG NXH010P120MNF1PTG onsemi nxh010p120mnf1-d.pdf Description: MOSFET 2N-CH 1200V 114A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
на замовлення 196 шт:
термін постачання 21-31 дні (днів)
1+9220.26 грн
28+7662.77 грн
В кошику  од. на суму  грн.
TN6714A TN6714A onsemi tn6714a-d.pdf Description: TRANS NPN 30V 2A TO226-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-226-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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NVMJS1D7N04CTWG NVMJS1D7N04CTWG onsemi nvmjs1d7n04c-d.pdf Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
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NVMJS1D7N04CTWG NVMJS1D7N04CTWG onsemi nvmjs1d7n04c-d.pdf Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2913 шт:
термін постачання 21-31 дні (днів)
2+180.54 грн
10+111.61 грн
100+76.26 грн
500+57.36 грн
1000+56.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FQA13N50C FQA13N50C onsemi FQA13N50C.pdf Description: MOSFET N-CH 500V 13.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.75A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
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MB6S MB6S onsemi MB8S-D.PDF Description: BRIDGE RECT 1P 600V 500MA 4-SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 183000 шт:
термін постачання 21-31 дні (днів)
3000+12.46 грн
6000+10.99 грн
9000+10.48 грн
15000+9.29 грн
21000+8.97 грн
30000+8.66 грн
75000+8.41 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MB6S MB6S onsemi MB8S-D.PDF Description: BRIDGE RECT 1P 600V 500MA 4-SOIC
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 186297 шт:
термін постачання 21-31 дні (днів)
7+53.65 грн
11+31.82 грн
100+20.46 грн
500+14.62 грн
1000+13.14 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
NLV74LCX00DTR2G NLV74LCX00DTR2G onsemi mc74lcx00-d.pdf Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Qualification: AEC-Q100
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NLV74LCX00DTR2G NLV74LCX00DTR2G onsemi mc74lcx00-d.pdf Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Qualification: AEC-Q100
на замовлення 2050 шт:
термін постачання 21-31 дні (днів)
5+83.46 грн
10+48.47 грн
25+40.22 грн
100+28.98 грн
250+24.68 грн
500+22.03 грн
1000+19.49 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
74LCX00SJX 74LCX00SJX onsemi ONSM-S-A0003590285-1.pdf?t.download=true&u=5oefqw Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
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74LCX00SJX 74LCX00SJX onsemi ONSM-S-A0003590285-1.pdf?t.download=true&u=5oefqw Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
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MC74HC32ADR2G-Q MC74HC32ADR2G-Q onsemi mc74hc32a-d.pdf Description: QUAD OR GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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FAN1616AD25X FAN1616AD25X onsemi FAN1616A.pdf Description: IC REG LINEAR 2.5V 500MA TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: TO-252AA
Voltage - Output (Min/Fixed): 2.5V
PSRR: 72dB (120Hz)
Voltage Dropout (Max): 1.2V @ 500mA
Protection Features: Over Current, Over Temperature
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NLX1G10BMX1TCG NLX1G10BMX1TCG onsemi NLX1G10.pdf Description: IC GATE NAND 1CH 3-INP 6ULLGA
Packaging: Bulk
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-ULLGA (1.2x1)
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
2959+7.92 грн
Мінімальне замовлення: 2959
В кошику  од. на суму  грн.
NC7SVL04L6X NC7SVL04L6X onsemi nc7svl04-d.pdf Description: IC INVERTER 1CH 1-INP 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 0.9V ~ 1.5V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.5ns @ 3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 900 nA
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NC7SVL04L6X NC7SVL04L6X onsemi nc7svl04-d.pdf Description: IC INVERTER 1CH 1-INP 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 0.9V ~ 1.5V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.5ns @ 3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 900 nA
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NSM3005NZTAG NSM3005NZTAG onsemi nsm3005nz-d.pdf Description: TRANS PNP 30V 500MA 6UDFN
Packaging: Tape & Reel (TR)
Voltage - Rated: 30V PNP, 20V N-Channel
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP, N-Channel
Applications: General Purpose
Supplier Device Package: 6-UDFN (1.6x1.6)
на замовлення 276000 шт:
термін постачання 21-31 дні (днів)
3000+12.62 грн
6000+11.81 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSM3005NZTAG NSM3005NZTAG onsemi nsm3005nz-d.pdf Description: TRANS PNP 30V 500MA 6UDFN
Packaging: Cut Tape (CT)
Voltage - Rated: 30V PNP, 20V N-Channel
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP, N-Channel
Applications: General Purpose
Supplier Device Package: 6-UDFN (1.6x1.6)
на замовлення 276000 шт:
термін постачання 21-31 дні (днів)
6+66.42 грн
10+39.69 грн
100+25.68 грн
500+18.41 грн
1000+16.58 грн
Мінімальне замовлення: 6
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FAN54046UCX-T onsemi FAN54041-D.PDF Description: USB-OTG, 1.55A, LI-ION SWITCHING
Packaging: Bulk
Package / Case: 25-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 25-WLCSP (2.4x2)
Charge Current - Max: 1.55A
Programmable Features: Current, Timer, Voltage
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Supply (Max): 6V
Battery Pack Voltage: 4.4V (Max)
Current - Charging: Constant - Programmable
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MC79L15ACDR2 MC79L15ACDR2 onsemi MC79L00%28A%29.pdf Description: IC REG LINEAR -15V 100MA 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): -15V
PSRR: 39dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
826+26.00 грн
Мінімальне замовлення: 826
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FDMS3626S FDMS3626S onsemi fdms3626s-d.pdf Description: MOSFET 2N-CH 25V 17.5A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 25A
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power56
на замовлення 558 шт:
термін постачання 21-31 дні (днів)
3+160.10 грн
10+104.23 грн
100+74.00 грн
500+56.87 грн
Мінімальне замовлення: 3
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MC14569BDWG MC14569BDWG onsemi mc14569b-d.pdf Description: IC DIVIDER BY N DL 4BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Divide-by-N
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 13 MHz
Number of Bits per Element: 4
на замовлення 339 шт:
термін постачання 21-31 дні (днів)
190+116.21 грн
Мінімальне замовлення: 190
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MC14569BDWR2G MC14569BDWR2G onsemi mc14569b-d.pdf Description: IC DIVIDER BY N DL 4BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Divide-by-N
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 13 MHz
Number of Bits per Element: 4
на замовлення 1549 шт:
термін постачання 21-31 дні (днів)
151+146.37 грн
Мінімальне замовлення: 151
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FSFR1800US FSFR1800US onsemi FSFR-US_Series.pdf Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SSIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 260 W
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)
125+196.47 грн
Мінімальне замовлення: 125
В кошику  од. на суму  грн.
FSFR1800US FSFR1800US onsemi FSFR-US_Series.pdf Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SSIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 260 W
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FSFR1800USL onsemi ONSM-S-A0003589564-1.pdf?t.download=true&u=5oefqw Description: HALF BRIDGE BASED PERIPHERAL DRI
Packaging: Bulk
на замовлення 380 шт:
термін постачання 21-31 дні (днів)
125+196.47 грн
Мінімальне замовлення: 125
В кошику  од. на суму  грн.
NSVBCP5616MTWG NSVBCP5616MTWG onsemi BCP56M-D.PDF Description: TRANS NPN 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Qualification: AEC-Q101
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ADT7483AARQZ-R7 adt7483a-d.pdf
ADT7483AARQZ-R7
Виробник: onsemi
Description: SENSOR DIGITAL 0C-127C 16QSOP
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Packaging: Bulk
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Digital, Local/Remote
Supplier Device Package: 16-QSOP
Test Condition: 0°C ~ 70°C (-40°C ~ 100°C)
Accuracy - Highest (Lowest): ±1°C (±2.5°C)
Sensing Temperature - Local: 0°C ~ 127°C
Sensing Temperature - Remote: -64°C ~ 191°C
на замовлення 11841 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
75+320.59 грн
Мінімальне замовлення: 75
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FQI11N40TU FQB11N40.pdf
Виробник: onsemi
Description: MOSFET N-CH 400V 11.4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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FAN4147SX fan4147-d.pdf
FAN4147SX
Виробник: onsemi
Description: IC CTLR LOW PWR AC GFI 6-SSOT
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Applications: Ground Fault Protection
Current - Supply: 400µA
Supplier Device Package: SuperSOT™-6
на замовлення 62394 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
669+36.47 грн
Мінімальне замовлення: 669
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FDG327NZ fdg327nz-d.pdf
FDG327NZ
Виробник: onsemi
Description: MOSFET N-CH 20V 1.5A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 10 V
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FDG327NZ fdg327nz-d.pdf
FDG327NZ
Виробник: onsemi
Description: MOSFET N-CH 20V 1.5A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 10 V
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BZX85C36 BZX85C3V3-C56.pdf
BZX85C36
Виробник: onsemi
Description: DIODE ZENER 36V 1W DO41
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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NSR20406NXT5G NSR20406-D.PDF
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A 2DSN
Packaging: Bulk
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 ns
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 2V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
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NRVTS12120EMFST1G nts12120emfs-d.pdf
NRVTS12120EMFST1G
Виробник: onsemi
Description: DIODE SCHOTTKY 120V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 120 V
Qualification: AEC-Q101
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NRVTS12120EMFST1G nts12120emfs-d.pdf
NRVTS12120EMFST1G
Виробник: onsemi
Description: DIODE SCHOTTKY 120V 12A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 120 V
Qualification: AEC-Q101
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+105.60 грн
10+68.23 грн
100+47.68 грн
500+36.11 грн
Мінімальне замовлення: 4
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FQU3N40TU FQD3N40%2C%20FQU3N40.pdf
FQU3N40TU
Виробник: onsemi
Description: MOSFET N-CH 400V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
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FQD3N40TF FAIRS17803-1.pdf?t.download=true&u=5oefqw
FQD3N40TF
Виробник: onsemi
Description: MOSFET N-CH 400V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
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MMDF3N02HDR2 mmdf3n02hd-d.pdf
MMDF3N02HDR2
Виробник: onsemi
Description: MOSFET N-CH 20V 3.8A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 16 V
на замовлення 16012 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
452+52.24 грн
Мінімальне замовлення: 452
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NTH4LN041N60S5H NTH4LN041N60S5H-D.PDF
Виробник: onsemi
Description: MOSFETPOWER, SINGLE, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 28.5A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.7mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6213 pF @ 400 V
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MCH4016-TL-H mch4016-d.pdf
MCH4016-TL-H
Виробник: onsemi
Description: RF TRANS NPN 12V 10GHZ 4-MCPH
Packaging: Bulk
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18dB
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: 4-MCPH
на замовлення 174000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1428+15.33 грн
Мінімальне замовлення: 1428
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TIP50 tip47-d.pdf
TIP50
Виробник: onsemi
Description: TRANS NPN 400V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
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MC74VHC257DTG mc74vhc257-d.pdf
MC74VHC257DTG
Виробник: onsemi
Description: IC MULTIPLEXER 4 X 2:1 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
на замовлення 61380 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1343+17.93 грн
Мінімальне замовлення: 1343
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FAN7392N fan7392-d.pdf
FAN7392N
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-MDIP
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.5V, 9.5V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+151.58 грн
10+107.76 грн
25+98.18 грн
100+82.26 грн
250+77.55 грн
500+74.72 грн
Мінімальне замовлення: 3
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1N4002G 1n4001-d.pdf
1N4002G
Виробник: onsemi
Description: DIODE STANDARD 100V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 28119 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+12.77 грн
48+6.89 грн
100+6.77 грн
500+4.66 грн
1000+3.70 грн
2000+3.24 грн
5000+2.81 грн
10000+2.65 грн
Мінімальне замовлення: 27
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NSVBCP5316MTWG bcp53m-d.pdf
NSVBCP5316MTWG
Виробник: onsemi
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
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BCP5316MTWG bcp53m-d.pdf
BCP5316MTWG
Виробник: onsemi
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+57.06 грн
10+34.03 грн
100+21.95 грн
500+15.73 грн
1000+14.16 грн
Мінімальне замовлення: 6
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1N4006G 1n4001-d.pdf
1N4006G
Виробник: onsemi
Description: DIODE STANDARD 800V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 7545 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+12.77 грн
41+8.04 грн
100+6.65 грн
500+4.58 грн
1000+3.56 грн
2000+3.02 грн
5000+2.69 грн
Мінімальне замовлення: 27
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NVD5890NT4G-VF01 NVD5890N-D.PDF
NVD5890NT4G-VF01
Виробник: onsemi
Description: POWER MOSFET 40V, 123A, 3.7 MOHM
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Qualification: AEC-Q101
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NVD5805NT4G-VF01 NTD5805N-D.PDF
NVD5805NT4G-VF01
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Qualification: AEC-Q101
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SVD5867NLT4G-UM NVD5867NL-D.PDF
SVD5867NLT4G-UM
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 60
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
Qualification: AEC-Q101
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FDU5N50NZTU fdu5n50nztu-d.pdf
Виробник: onsemi
Description: MOSFET N-CH 500V 4A DPAK3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK3 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
на замовлення 13509 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
620+37.99 грн
Мінімальне замовлення: 620
В кошику  од. на суму  грн.
NRVBA320NT3G mbra320-d.pdf
NRVBA320NT3G
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Qualification: AEC-Q101
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NRVBA320NT3G mbra320-d.pdf
NRVBA320NT3G
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 3A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Qualification: AEC-Q101
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1N4001G 1n4001-d.pdf
1N4001G
Виробник: onsemi
Description: DIODE STANDARD 50V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 41566 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
32+10.94 грн
50+6.68 грн
100+6.66 грн
500+4.59 грн
1000+3.42 грн
2000+3.31 грн
5000+2.88 грн
10000+2.45 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
1N4005G 1n4001-d.pdf
1N4005G
Виробник: onsemi
Description: DIODE STANDARD 600V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 22453 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
34+10.21 грн
55+6.05 грн
100+5.84 грн
500+3.96 грн
1000+2.86 грн
2000+2.48 грн
5000+2.27 грн
10000+2.21 грн
Мінімальне замовлення: 34
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NVMFS5C404NLWFET3G NVMFS5C404NL-D.PDF
NVMFS5C404NLWFET3G
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Qualification: AEC-Q101
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NVBG023N065M3S
Виробник: onsemi
Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
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NVBG023N065M3S
Виробник: onsemi
Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
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NXH010P90MNF1PTG nxh010p90mnf1-d.pdf
NXH010P90MNF1PTG
Виробник: onsemi
Description: MOSFET 2N-CH 900V 154A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 328W (Tj)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9940.71 грн
28+8386.47 грн
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NXH010P120MNF1PTG nxh010p120mnf1-d.pdf
NXH010P120MNF1PTG
Виробник: onsemi
Description: MOSFET 2N-CH 1200V 114A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
на замовлення 196 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9220.26 грн
28+7662.77 грн
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TN6714A tn6714a-d.pdf
TN6714A
Виробник: onsemi
Description: TRANS NPN 30V 2A TO226-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-226-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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NVMJS1D7N04CTWG nvmjs1d7n04c-d.pdf
NVMJS1D7N04CTWG
Виробник: onsemi
Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
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NVMJS1D7N04CTWG nvmjs1d7n04c-d.pdf
NVMJS1D7N04CTWG
Виробник: onsemi
Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2913 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+180.54 грн
10+111.61 грн
100+76.26 грн
500+57.36 грн
1000+56.50 грн
Мінімальне замовлення: 2
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FQA13N50C FQA13N50C.pdf
FQA13N50C
Виробник: onsemi
Description: MOSFET N-CH 500V 13.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.75A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
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MB6S MB8S-D.PDF
MB6S
Виробник: onsemi
Description: BRIDGE RECT 1P 600V 500MA 4-SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 183000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.46 грн
6000+10.99 грн
9000+10.48 грн
15000+9.29 грн
21000+8.97 грн
30000+8.66 грн
75000+8.41 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MB6S MB8S-D.PDF
MB6S
Виробник: onsemi
Description: BRIDGE RECT 1P 600V 500MA 4-SOIC
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 186297 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+53.65 грн
11+31.82 грн
100+20.46 грн
500+14.62 грн
1000+13.14 грн
Мінімальне замовлення: 7
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NLV74LCX00DTR2G mc74lcx00-d.pdf
NLV74LCX00DTR2G
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Qualification: AEC-Q100
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NLV74LCX00DTR2G mc74lcx00-d.pdf
NLV74LCX00DTR2G
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Qualification: AEC-Q100
на замовлення 2050 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+83.46 грн
10+48.47 грн
25+40.22 грн
100+28.98 грн
250+24.68 грн
500+22.03 грн
1000+19.49 грн
Мінімальне замовлення: 5
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74LCX00SJX ONSM-S-A0003590285-1.pdf?t.download=true&u=5oefqw
74LCX00SJX
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
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74LCX00SJX ONSM-S-A0003590285-1.pdf?t.download=true&u=5oefqw
74LCX00SJX
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
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MC74HC32ADR2G-Q mc74hc32a-d.pdf
MC74HC32ADR2G-Q
Виробник: onsemi
Description: QUAD OR GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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FAN1616AD25X FAN1616A.pdf
FAN1616AD25X
Виробник: onsemi
Description: IC REG LINEAR 2.5V 500MA TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: TO-252AA
Voltage - Output (Min/Fixed): 2.5V
PSRR: 72dB (120Hz)
Voltage Dropout (Max): 1.2V @ 500mA
Protection Features: Over Current, Over Temperature
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NLX1G10BMX1TCG NLX1G10.pdf
NLX1G10BMX1TCG
Виробник: onsemi
Description: IC GATE NAND 1CH 3-INP 6ULLGA
Packaging: Bulk
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-ULLGA (1.2x1)
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2959+7.92 грн
Мінімальне замовлення: 2959
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NC7SVL04L6X nc7svl04-d.pdf
NC7SVL04L6X
Виробник: onsemi
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 0.9V ~ 1.5V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.5ns @ 3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 900 nA
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NC7SVL04L6X nc7svl04-d.pdf
NC7SVL04L6X
Виробник: onsemi
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 0.9V ~ 1.5V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.5ns @ 3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 900 nA
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NSM3005NZTAG nsm3005nz-d.pdf
NSM3005NZTAG
Виробник: onsemi
Description: TRANS PNP 30V 500MA 6UDFN
Packaging: Tape & Reel (TR)
Voltage - Rated: 30V PNP, 20V N-Channel
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP, N-Channel
Applications: General Purpose
Supplier Device Package: 6-UDFN (1.6x1.6)
на замовлення 276000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.62 грн
6000+11.81 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSM3005NZTAG nsm3005nz-d.pdf
NSM3005NZTAG
Виробник: onsemi
Description: TRANS PNP 30V 500MA 6UDFN
Packaging: Cut Tape (CT)
Voltage - Rated: 30V PNP, 20V N-Channel
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP, N-Channel
Applications: General Purpose
Supplier Device Package: 6-UDFN (1.6x1.6)
на замовлення 276000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+66.42 грн
10+39.69 грн
100+25.68 грн
500+18.41 грн
1000+16.58 грн
Мінімальне замовлення: 6
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FAN54046UCX-T FAN54041-D.PDF
Виробник: onsemi
Description: USB-OTG, 1.55A, LI-ION SWITCHING
Packaging: Bulk
Package / Case: 25-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 25-WLCSP (2.4x2)
Charge Current - Max: 1.55A
Programmable Features: Current, Timer, Voltage
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Supply (Max): 6V
Battery Pack Voltage: 4.4V (Max)
Current - Charging: Constant - Programmable
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MC79L15ACDR2 MC79L00%28A%29.pdf
MC79L15ACDR2
Виробник: onsemi
Description: IC REG LINEAR -15V 100MA 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): -15V
PSRR: 39dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
826+26.00 грн
Мінімальне замовлення: 826
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FDMS3626S fdms3626s-d.pdf
FDMS3626S
Виробник: onsemi
Description: MOSFET 2N-CH 25V 17.5A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 25A
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power56
на замовлення 558 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+160.10 грн
10+104.23 грн
100+74.00 грн
500+56.87 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MC14569BDWG mc14569b-d.pdf
MC14569BDWG
Виробник: onsemi
Description: IC DIVIDER BY N DL 4BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Divide-by-N
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 13 MHz
Number of Bits per Element: 4
на замовлення 339 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
190+116.21 грн
Мінімальне замовлення: 190
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MC14569BDWR2G mc14569b-d.pdf
MC14569BDWR2G
Виробник: onsemi
Description: IC DIVIDER BY N DL 4BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Divide-by-N
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 13 MHz
Number of Bits per Element: 4
на замовлення 1549 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
151+146.37 грн
Мінімальне замовлення: 151
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FSFR1800US FSFR-US_Series.pdf
FSFR1800US
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SSIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 260 W
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
125+196.47 грн
Мінімальне замовлення: 125
В кошику  од. на суму  грн.
FSFR1800US FSFR-US_Series.pdf
FSFR1800US
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SSIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 260 W
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FSFR1800USL ONSM-S-A0003589564-1.pdf?t.download=true&u=5oefqw
Виробник: onsemi
Description: HALF BRIDGE BASED PERIPHERAL DRI
Packaging: Bulk
на замовлення 380 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
125+196.47 грн
Мінімальне замовлення: 125
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NSVBCP5616MTWG BCP56M-D.PDF
NSVBCP5616MTWG
Виробник: onsemi
Description: TRANS NPN 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Qualification: AEC-Q101
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