| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MC74HCT573ADWR2G-Q | onsemi |
Description: IC D-TYPE 1:8 20-SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Circuit: 1:8 Logic Type: D-Type Latch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 6mA, 6mA Delay Time - Propagation: 30ns Supplier Device Package: 20-SOIC Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MC74HCT573ADWR2G-Q | onsemi |
Description: IC D-TYPE 1:8 20-SOICPackaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Circuit: 1:8 Logic Type: D-Type Latch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 6mA, 6mA Delay Time - Propagation: 30ns Supplier Device Package: 20-SOIC Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MC74LVX4052MG | onsemi |
Description: IC SWITCH SP4TX2 26OHM 16SOEIAJPackaging: Tube Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 26Ohm -3db Bandwidth: 80MHz Supplier Device Package: 16-SOEIAJ Voltage - Supply, Single (V+): 2.5V ~ 6V Voltage - Supply, Dual (V±): ±2.5V ~ 6V Charge Injection: 12pC Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MCR12LMG | onsemi |
Description: SCR 600V 12A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 8 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz Current - On State (It (AV)) (Max): 7.6 A Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 2.2 V Current - Off State (Max): 10 µA Supplier Device Package: TO-220 Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| JANTXV2N3700 | onsemi |
Description: TRANS NPN 80V 1A TO-18-3Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18-3 Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| JAN2N3700 | onsemi |
Description: TRANS NPN 80V 1A TO-18-3Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18-3 Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74LVXT4052DTR2G | onsemi |
Description: IC SWITCH SP4T X 2 26OHM 16TSSOPPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 26Ohm -3db Bandwidth: 80MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 2.5V ~ 6V Voltage - Supply, Dual (V±): ±2.5V ~ 6V Charge Injection: 12pC Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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MC74LVXT4052DTR2G | onsemi |
Description: IC SWITCH SP4T X 2 26OHM 16TSSOPPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 26Ohm -3db Bandwidth: 80MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 2.5V ~ 6V Voltage - Supply, Dual (V±): ±2.5V ~ 6V Charge Injection: 12pC Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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CNW11AV2300 | onsemi |
Description: OPTOISO 4KV TRANS W/BASE 6-DIPPackaging: Tube Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Transistor with Base Mounting Type: Through Hole Input Type: DC Current - Output / Channel: 100mA Voltage - Isolation: 4000Vrms Current Transfer Ratio (Min): 50% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 6-DIP Voltage - Output (Max): 70V Number of Channels: 1 Current - DC Forward (If) (Max): 100 mA |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||||
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FGL35N120FTDTU | onsemi |
Description: IGBT TRENCH FS 1200V 70A TO-264Packaging: Bulk Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 337 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A Supplier Device Package: TO-264-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 34ns/172ns Switching Energy: 2.5mJ (on), 1.7mJ (off) Test Condition: 600V, 35A, 10Ohm, 15V Gate Charge: 210 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 105 A Power - Max: 368 W |
на замовлення 1501 шт: термін постачання 21-31 дні (днів) |
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FGL35N120FTDTU | onsemi |
Description: IGBT TRENCH FS 1200V 70A TO-264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 337 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A Supplier Device Package: TO-264-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 34ns/172ns Switching Energy: 2.5mJ (on), 1.7mJ (off) Test Condition: 600V, 35A, 10Ohm, 15V Gate Charge: 210 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 105 A Power - Max: 368 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| LA5779-E | onsemi |
Description: IC REG BUCK ADJ 3.1A TO220-5HPackaging: Tube Package / Case: TO-220-5 Formed Leads Output Type: Adjustable Mounting Type: Through Hole Number of Outputs: 1 Function: Step-Down Current - Output: 3.1A (Switch) Operating Temperature: -30°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 160kHz Voltage - Input (Max): 28V Topology: Buck Supplier Device Package: TO-220-5H Synchronous Rectifier: No Voltage - Output (Max): 28V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 1.23V |
на замовлення 76308 шт: термін постачання 21-31 дні (днів) |
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| LA5779-E | onsemi |
Description: IC REG BUCK ADJ 3.1A TO220-5HPackaging: Tube Package / Case: TO-220-5 Formed Leads Output Type: Adjustable Mounting Type: Through Hole Number of Outputs: 1 Function: Step-Down Current - Output: 3.1A (Switch) Operating Temperature: -30°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 160kHz Voltage - Input (Max): 28V Topology: Buck Supplier Device Package: TO-220-5H Synchronous Rectifier: No Voltage - Output (Max): 28V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 1.23V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LA5774-FA-E | onsemi |
Description: IC REG BUCK ADJ 3.1A TO220-5HPackaging: Tube Package / Case: TO-220-5 Formed Leads Output Type: Adjustable Mounting Type: Through Hole Number of Outputs: 1 Function: Step-Down Current - Output: 3.1A (Switch) Operating Temperature: -30°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 160kHz Voltage - Input (Max): 28V Topology: Buck Supplier Device Package: TO-220-5H Synchronous Rectifier: No Voltage - Output (Max): 28V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 1.26V |
на замовлення 4137 шт: термін постачання 21-31 дні (днів) |
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| LA5774-FA-E | onsemi |
Description: IC REG BUCK ADJ 3.1A TO220-5HPackaging: Tube Package / Case: TO-220-5 Formed Leads Output Type: Adjustable Mounting Type: Through Hole Number of Outputs: 1 Function: Step-Down Current - Output: 3.1A (Switch) Operating Temperature: -30°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 160kHz Voltage - Input (Max): 28V Topology: Buck Supplier Device Package: TO-220-5H Synchronous Rectifier: No Voltage - Output (Max): 28V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 1.26V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NTMFSCH0D4N04XMTWG | onsemi |
Description: MOSFET - POWER, SINGLEN-CHANNEL,Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 3.5V @ 350µA Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 529A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTMFSCH0D4N04XMTWG | onsemi |
Description: MOSFET - POWER, SINGLEN-CHANNEL,Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 3.5V @ 350µA Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 529A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMDF4N01HDR2 | onsemi |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk |
на замовлення 117500 шт: термін постачання 21-31 дні (днів) |
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NTMFS4D0N08XT1G | onsemi |
Description: T10 80V STD NCH MOSFET SO8FLPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 119A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 133µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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NTMFS4D0N08XT1G | onsemi |
Description: T10 80V STD NCH MOSFET SO8FLPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 119A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 133µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V |
на замовлення 5123 шт: термін постачання 21-31 дні (днів) |
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NTMFS3D0N08XT1G | onsemi |
Description: T10 80V STD NCH MOSFET SO8FLDrive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 3.6V @ 184µA Power Dissipation (Max): 133W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||||
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NTMFS3D0N08XT1G | onsemi |
Description: T10 80V STD NCH MOSFET SO8FLInput Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 3.6V @ 184µA Power Dissipation (Max): 133W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
на замовлення 283 шт: термін постачання 21-31 дні (днів) |
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NTMFD5C466NLT1G | onsemi |
Description: MOSFET 2N-CH 40V 14A 8DFNSupplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 3W (Ta), 40W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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NTMFD5C466NLT1G | onsemi |
Description: MOSFET 2N-CH 40V 14A 8DFNSupplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 3W (Ta), 40W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 5905 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H836NT3G | onsemi |
Description: T8 80V SO8FLTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 95µA Power Dissipation (Max): 3.7W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc) FET Type: N-Channel |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NVMFS6H836NT3G | onsemi |
Description: T8 80V SO8FLPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V Power Dissipation (Max): 3.7W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 95µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 3970 шт: термін постачання 21-31 дні (днів) |
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NLV74VHCT00ADTR2G | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOP Qualification: AEC-Q100 Current - Quiescent (Max): 2 µA Number of Circuits: 4 Grade: Automotive Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Input Logic Level - Low: 0.53V ~ 0.8V Input Logic Level - High: 1.4V ~ 2V Supplier Device Package: 14-TSSOP Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 3V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NLV74VHCT00ADTR2G | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOP Number of Circuits: 4 Grade: Automotive Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Input Logic Level - Low: 0.53V ~ 0.8V Input Logic Level - High: 1.4V ~ 2V Supplier Device Package: 14-TSSOP Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 3V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q100 Current - Quiescent (Max): 2 µA |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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1N6287AG | onsemi |
Description: TVS DIODE 40.2VWM 64.8VC AXIALPackaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 40.2V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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FSD176MRTLDTU | onsemi |
Description: IC OFFLINE SW FLBACK TO220F-6LPower (Watts): 90 W Voltage - Start Up: 12 V Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Supplier Device Package: TO-220F-6L (L-Forming) Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 67kHz Duty Cycle: 67% Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-6 Full Pack, Formed Leads Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTMFC013NP10M5L | onsemi |
Description: MOSFET N/P-CH 100V 9A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W (Ta), 102W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA Supplier Device Package: 8-WDFN (5x6) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NTMFC013NP10M5L | onsemi |
Description: MOSFET N/P-CH 100V 9A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W (Ta), 102W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA Supplier Device Package: 8-WDFN (5x6) |
на замовлення 2548 шт: термін постачання 21-31 дні (днів) |
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UHB100SC12E1BC3N | onsemi |
Description: MOSFET 2P-CH 1200V 100A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 P-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 417W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5859pF @ 800V Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 12V Gate Charge (Qg) (Max) @ Vgs: 170nC @ 15V Vgs(th) (Max) @ Id: 6V @ 40mA Supplier Device Package: Module |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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NV24C64MUW3VTBG | onsemi |
Description: IC EEPROM 64KBIT I2C 8UDFNPackaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Grade: Automotive Write Cycle Time - Word, Page: 4ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 8K x 8 Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NV24C64MUW3VTBG | onsemi |
Description: IC EEPROM 64KBIT I2C 8UDFNPackaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Grade: Automotive Write Cycle Time - Word, Page: 4ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 8K x 8 Qualification: AEC-Q101 |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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| MR5060 | onsemi |
Description: LED RED DIFFUSED T-1 T/H R/ALens Size: 3.05mm Dia Lens Style: Round with Domed Top Lens Transparency: Diffused Supplier Device Package: T-1 Height (Max): 7.37mm Current - Test: 13mA Lens Color: Red Voltage - Forward (Vf) (Typ): 5V Configuration: Standard Millicandela Rating: 1.5mcd Mounting Type: Through Hole, Right Angle Color: Red Package / Case: Radial Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||||||||
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MC74HC245ADWR2G-Q | onsemi |
Description: IC TXRX 2V/6V 20-SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 8 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-SOIC |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MC74HC245ADWR2G-Q | onsemi |
Description: IC TXRX 2V/6V 20-SOICPackaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 8 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-SOIC |
на замовлення 1980 шт: термін постачання 21-31 дні (днів) |
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CNW136 | onsemi |
Description: OPTOISO 5KV TRANS W/BASE 8-DIPPackaging: Tube Package / Case: 8-DIP (0.400", 10.16mm) Output Type: Transistor with Base Mounting Type: Through Hole Input Type: DC Current - Output / Channel: 10mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 19% @ 16mA Supplier Device Package: 8-DIP Voltage - Output (Max): 20V Number of Channels: 1 Current - DC Forward (If) (Max): 100 mA |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. | ||||||||||||||||||
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CNW136S | onsemi |
Description: OPTOISO 5KV TRANS W/BASE 8-SMDPackaging: Bag Package / Case: 8-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Input Type: DC Current - Output / Channel: 10mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 19% @ 16mA Supplier Device Package: 8-SMD Voltage - Output (Max): 20V Number of Channels: 1 Current - DC Forward (If) (Max): 100 mA |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC574ADWR2G-Q | onsemi |
Description: IC FF D-TYPE 1-ELE 8-BIT 20-SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 7.8mA, 7.8mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 20-SOIC Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF Grade: Automotive Number of Bits per Element: 8 Qualification: AEC-Q100 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MC74HC574ADWR2G-Q | onsemi |
Description: IC FF D-TYPE 1-ELE 8-BIT 20-SOICPackaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 7.8mA, 7.8mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 20-SOIC Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF Grade: Automotive Number of Bits per Element: 8 Qualification: AEC-Q100 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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NCP130AMX080TCGEVB | onsemi |
Description: NCP130AMX080TC BIAS RAIL LDO REG Channels per IC: 1 - Single Utilized IC / Part: NCP130 Regulator Type: Positive Fixed Current - Output: 850mA Voltage - Input: 0.8V ~ 5.5V Voltage - Output: 0.8V Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP130BMX080TCGEVB | onsemi |
Description: NCP130BMX080TCG BIAS RAIL LDO RE Channels per IC: 1 - Single Utilized IC / Part: NCP130 Regulator Type: Positive Fixed Current - Output: 850mA Voltage - Input: 0.8V ~ 5.5V Voltage - Output: 0.8V Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP171AMX080060TCGEVB | onsemi |
Description: NCP171: LDO REGULATOR, ULTRA-LOWPackaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV8130BMX080TCGEVB | onsemi |
Description: NCV8130BMX080TCG BIAS RAIL LDO R Channels per IC: 1 - Single Utilized IC / Part: NCV8130 Regulator Type: Positive Fixed Voltage - Output: 0.8V Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NCP163ASN280T1GEVB | onsemi |
Description: NCP163 SOT23 EVAL BOARD Channels per IC: 1 - Single Utilized IC / Part: NCP163 Regulator Type: Positive Fixed Current - Output: 700mA Voltage - Input: 2.2V ~ 5.5V Voltage - Output: 2.8V Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FSBB30CH60F | onsemi |
Description: IGBT IPM 600V 30A 27-PWRDIP MODPackaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Current: 30 A Voltage: 600 V |
на замовлення 2925 шт: термін постачання 21-31 дні (днів) |
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FSBB30CH60F | onsemi |
Description: IGBT IPM 600V 30A 27-PWRDIP MODPackaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Current: 30 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZBZX84C43ET1G | onsemi |
Description: DIODE ZENER 43V 225MW SOT23-3Tolerance: ±7% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 150 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SZBZX84C43ET1G | onsemi |
Description: DIODE ZENER 43V 225MW SOT23-3Tolerance: ±7% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 150 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V Qualification: AEC-Q101 |
на замовлення 2930 шт: термін постачання 21-31 дні (днів) |
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BZX84C43LT1 | onsemi |
Description: DIODE ZENER 43V 225MW SOT23-3Tolerance: ±7% Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 150 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V |
на замовлення 231000 шт: термін постачання 21-31 дні (днів) |
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MC74HC4053ADR2G | onsemi |
Description: IC SWITCH SPDT X 3 100OHM 16SOICPackaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 100Ohm -3db Bandwidth: 120MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2V ~ 6V Voltage - Supply, Dual (V±): ±2V ~ 6V Crosstalk: -60dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 50pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 3 |
на замовлення 173672 шт: термін постачання 21-31 дні (днів) |
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MC74HC4053ADWR2G | onsemi |
Description: IC SWITCH SPDT X 3 100OHM 16SOICPackaging: Bulk Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 100Ohm -3db Bandwidth: 120MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2V ~ 6V Voltage - Supply, Dual (V±): ±2V ~ 6V Crosstalk: -60dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 50pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 3 |
на замовлення 20961 шт: термін постачання 21-31 дні (днів) |
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CNY17F3VM | onsemi |
Description: OPTOISO 4.17KV 1CH TRANS 6-DIPPackaging: Bulk Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 6-DIP Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 30955 шт: термін постачання 21-31 дні (днів) |
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CNY17F3300W | onsemi |
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-DIPCurrent - DC Forward (If) (Max): 100 mA Number of Channels: 1 Rise / Fall Time (Typ): 1µs, 2µs Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-DIP Current Transfer Ratio (Max): 200% @ 10mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 100% @ 10mA Voltage - Isolation: 5300Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 6-DIP (0.400", 10.16mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CNY17F3S | onsemi |
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-SMDCurrent - DC Forward (If) (Max): 100 mA Number of Channels: 1 Rise / Fall Time (Typ): 1µs, 2µs Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-SMD Current Transfer Ratio (Max): 200% @ 10mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 100% @ 10mA Voltage - Isolation: 5300Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -55°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SMD, Gull Wing Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CNY17F3W | onsemi |
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-DIPPackaging: Tube Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5300Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 6-DIP Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 1µs, 2µs Number of Channels: 1 Current - DC Forward (If) (Max): 100 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MB8S | onsemi |
Description: BRIDGE RECT 1P 800V 500MA 4-SOICPackaging: Tape & Reel (TR) Package / Case: TO-269AA, 4-BESOP Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SOIC Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 378000 шт: термін постачання 21-31 дні (днів) |
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MB8S | onsemi |
Description: BRIDGE RECT 1P 800V 500MA 4-SOICPackaging: Cut Tape (CT) Package / Case: TO-269AA, 4-BESOP Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SOIC Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 378417 шт: термін постачання 21-31 дні (днів) |
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| MC74HCT573ADWR2G-Q |
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Виробник: onsemi
Description: IC D-TYPE 1:8 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Delay Time - Propagation: 30ns
Supplier Device Package: 20-SOIC
Grade: Automotive
Qualification: AEC-Q100
Description: IC D-TYPE 1:8 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Delay Time - Propagation: 30ns
Supplier Device Package: 20-SOIC
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 21.55 грн |
| MC74HCT573ADWR2G-Q |
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Виробник: onsemi
Description: IC D-TYPE 1:8 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Delay Time - Propagation: 30ns
Supplier Device Package: 20-SOIC
Grade: Automotive
Qualification: AEC-Q100
Description: IC D-TYPE 1:8 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Delay Time - Propagation: 30ns
Supplier Device Package: 20-SOIC
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.68 грн |
| 10+ | 30.87 грн |
| 25+ | 27.75 грн |
| 100+ | 22.75 грн |
| 250+ | 21.19 грн |
| 500+ | 20.25 грн |
| MC74LVX4052MG |
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Виробник: onsemi
Description: IC SWITCH SP4TX2 26OHM 16SOEIAJ
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-SOEIAJ
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Description: IC SWITCH SP4TX2 26OHM 16SOEIAJ
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-SOEIAJ
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
товару немає в наявності
В кошику
од. на суму грн.
| MCR12LMG |
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Виробник: onsemi
Description: SCR 600V 12A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 8 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - On State (It (AV)) (Max): 7.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: SCR 600V 12A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 8 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - On State (It (AV)) (Max): 7.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 284+ | 72.82 грн |
| JANTXV2N3700 |
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Виробник: onsemi
Description: TRANS NPN 80V 1A TO-18-3
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18-3
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500
Description: TRANS NPN 80V 1A TO-18-3
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18-3
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500
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| JAN2N3700 |
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Виробник: onsemi
Description: TRANS NPN 80V 1A TO-18-3
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18-3
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500
Description: TRANS NPN 80V 1A TO-18-3
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18-3
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500
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| MC74LVXT4052DTR2G |
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Виробник: onsemi
Description: IC SWITCH SP4T X 2 26OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 26OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 10.33 грн |
| 5000+ | 9.64 грн |
| MC74LVXT4052DTR2G |
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Виробник: onsemi
Description: IC SWITCH SP4T X 2 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.30 грн |
| 19+ | 16.23 грн |
| 25+ | 14.40 грн |
| 100+ | 11.65 грн |
| 250+ | 10.77 грн |
| 500+ | 10.24 грн |
| 1000+ | 9.63 грн |
| CNW11AV2300 |
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Виробник: onsemi
Description: OPTOISO 4KV TRANS W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 4000Vrms
Current Transfer Ratio (Min): 50% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Description: OPTOISO 4KV TRANS W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 4000Vrms
Current Transfer Ratio (Min): 50% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
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Мінімальне замовлення: 50 шт
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| FGL35N120FTDTU |
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Виробник: onsemi
Description: IGBT TRENCH FS 1200V 70A TO-264
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 337 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
Supplier Device Package: TO-264-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/172ns
Switching Energy: 2.5mJ (on), 1.7mJ (off)
Test Condition: 600V, 35A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 368 W
Description: IGBT TRENCH FS 1200V 70A TO-264
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 337 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
Supplier Device Package: TO-264-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/172ns
Switching Energy: 2.5mJ (on), 1.7mJ (off)
Test Condition: 600V, 35A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 368 W
на замовлення 1501 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 53+ | 382.78 грн |
| FGL35N120FTDTU |
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Виробник: onsemi
Description: IGBT TRENCH FS 1200V 70A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 337 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
Supplier Device Package: TO-264-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/172ns
Switching Energy: 2.5mJ (on), 1.7mJ (off)
Test Condition: 600V, 35A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 368 W
Description: IGBT TRENCH FS 1200V 70A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 337 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
Supplier Device Package: TO-264-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/172ns
Switching Energy: 2.5mJ (on), 1.7mJ (off)
Test Condition: 600V, 35A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 368 W
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| LA5779-E |
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Виробник: onsemi
Description: IC REG BUCK ADJ 3.1A TO220-5H
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.1A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 160kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: TO-220-5H
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
Description: IC REG BUCK ADJ 3.1A TO220-5H
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.1A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 160kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: TO-220-5H
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
на замовлення 76308 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 190+ | 105.25 грн |
| LA5779-E |
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Виробник: onsemi
Description: IC REG BUCK ADJ 3.1A TO220-5H
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.1A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 160kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: TO-220-5H
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
Description: IC REG BUCK ADJ 3.1A TO220-5H
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.1A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 160kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: TO-220-5H
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
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| LA5774-FA-E |
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Виробник: onsemi
Description: IC REG BUCK ADJ 3.1A TO220-5H
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.1A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 160kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: TO-220-5H
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.26V
Description: IC REG BUCK ADJ 3.1A TO220-5H
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.1A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 160kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: TO-220-5H
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.26V
на замовлення 4137 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 190+ | 105.25 грн |
| LA5774-FA-E |
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Виробник: onsemi
Description: IC REG BUCK ADJ 3.1A TO220-5H
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.1A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 160kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: TO-220-5H
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.26V
Description: IC REG BUCK ADJ 3.1A TO220-5H
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.1A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 160kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: TO-220-5H
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.26V
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| NTMFSCH0D4N04XMTWG |
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Виробник: onsemi
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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| NTMFSCH0D4N04XMTWG |
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Виробник: onsemi
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
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| MMDF4N01HDR2 |
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на замовлення 117500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1150+ | 17.25 грн |
| NTMFS4D0N08XT1G |
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Виробник: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 133µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 133µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 37.99 грн |
| 3000+ | 33.91 грн |
| 4500+ | 32.55 грн |
| NTMFS4D0N08XT1G |
![]() |
Виробник: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 133µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 133µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V
на замовлення 5123 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.76 грн |
| 10+ | 78.35 грн |
| 100+ | 52.83 грн |
| 500+ | 39.32 грн |
| NTMFS3D0N08XT1G |
![]() |
Виробник: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Power Dissipation (Max): 133W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Description: T10 80V STD NCH MOSFET SO8FL
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Power Dissipation (Max): 133W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NTMFS3D0N08XT1G |
![]() |
Виробник: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Power Dissipation (Max): 133W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: T10 80V STD NCH MOSFET SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Power Dissipation (Max): 133W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
на замовлення 283 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 196.74 грн |
| 10+ | 122.20 грн |
| 50+ | 93.31 грн |
| 100+ | 78.82 грн |
| NTMFD5C466NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 40V 14A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 40W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 14A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 40W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 25.18 грн |
| 3000+ | 22.31 грн |
| 4500+ | 21.32 грн |
| NTMFD5C466NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 40V 14A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 40W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 14A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 40W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 5905 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.14 грн |
| 10+ | 54.50 грн |
| 100+ | 36.03 грн |
| 500+ | 26.37 грн |
| NVMFS6H836NT3G |
![]() |
Виробник: onsemi
Description: T8 80V SO8FL
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 95µA
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
FET Type: N-Channel
Description: T8 80V SO8FL
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 95µA
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
FET Type: N-Channel
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NVMFS6H836NT3G |
![]() |
Виробник: onsemi
Description: T8 80V SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
Description: T8 80V SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
на замовлення 3970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.44 грн |
| 10+ | 80.16 грн |
| 100+ | 55.05 грн |
| 500+ | 41.03 грн |
| 1000+ | 38.51 грн |
| NLV74VHCT00ADTR2G |
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Qualification: AEC-Q100
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Grade: Automotive
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Input Logic Level - Low: 0.53V ~ 0.8V
Input Logic Level - High: 1.4V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Qualification: AEC-Q100
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Grade: Automotive
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Input Logic Level - Low: 0.53V ~ 0.8V
Input Logic Level - High: 1.4V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 14.95 грн |
| NLV74VHCT00ADTR2G |
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Number of Circuits: 4
Grade: Automotive
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Input Logic Level - Low: 0.53V ~ 0.8V
Input Logic Level - High: 1.4V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Number of Circuits: 4
Grade: Automotive
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Input Logic Level - Low: 0.53V ~ 0.8V
Input Logic Level - High: 1.4V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Current - Quiescent (Max): 2 µA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| 1N6287AG |
![]() |
Виробник: onsemi
Description: TVS DIODE 40.2VWM 64.8VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 40.2VWM 64.8VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 865+ | 23.49 грн |
| FSD176MRTLDTU |
![]() |
Виробник: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Power (Watts): 90 W
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: TO-220F-6L (L-Forming)
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 67kHz
Duty Cycle: 67%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-6 Full Pack, Formed Leads
Packaging: Tube
Description: IC OFFLINE SW FLBACK TO220F-6L
Power (Watts): 90 W
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: TO-220F-6L (L-Forming)
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 67kHz
Duty Cycle: 67%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-6 Full Pack, Formed Leads
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| NTMFC013NP10M5L |
![]() |
Виробник: onsemi
Description: MOSFET N/P-CH 100V 9A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta), 102W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA
Supplier Device Package: 8-WDFN (5x6)
Description: MOSFET N/P-CH 100V 9A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta), 102W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA
Supplier Device Package: 8-WDFN (5x6)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTMFC013NP10M5L |
![]() |
Виробник: onsemi
Description: MOSFET N/P-CH 100V 9A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta), 102W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA
Supplier Device Package: 8-WDFN (5x6)
Description: MOSFET N/P-CH 100V 9A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta), 102W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA
Supplier Device Package: 8-WDFN (5x6)
на замовлення 2548 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 237.50 грн |
| 10+ | 149.52 грн |
| 100+ | 104.40 грн |
| 500+ | 85.52 грн |
| UHB100SC12E1BC3N |
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Виробник: onsemi
Description: MOSFET 2P-CH 1200V 100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 P-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 417W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5859pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 12V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 15V
Vgs(th) (Max) @ Id: 6V @ 40mA
Supplier Device Package: Module
Description: MOSFET 2P-CH 1200V 100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 P-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 417W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5859pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 12V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 15V
Vgs(th) (Max) @ Id: 6V @ 40mA
Supplier Device Package: Module
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13258.22 грн |
| 24+ | 10986.26 грн |
| NV24C64MUW3VTBG |
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Виробник: onsemi
Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
Qualification: AEC-Q101
Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
Qualification: AEC-Q101
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Мінімальне замовлення: 3000 шт
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| NV24C64MUW3VTBG |
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Виробник: onsemi
Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
Qualification: AEC-Q101
Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
Qualification: AEC-Q101
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.02 грн |
| 25+ | 30.25 грн |
| 50+ | 27.78 грн |
| 100+ | 27.19 грн |
| 250+ | 26.40 грн |
| 500+ | 25.37 грн |
| 1000+ | 24.78 грн |
| MR5060 |
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Виробник: onsemi
Description: LED RED DIFFUSED T-1 T/H R/A
Lens Size: 3.05mm Dia
Lens Style: Round with Domed Top
Lens Transparency: Diffused
Supplier Device Package: T-1
Height (Max): 7.37mm
Current - Test: 13mA
Lens Color: Red
Voltage - Forward (Vf) (Typ): 5V
Configuration: Standard
Millicandela Rating: 1.5mcd
Mounting Type: Through Hole, Right Angle
Color: Red
Package / Case: Radial
Packaging: Bulk
Description: LED RED DIFFUSED T-1 T/H R/A
Lens Size: 3.05mm Dia
Lens Style: Round with Domed Top
Lens Transparency: Diffused
Supplier Device Package: T-1
Height (Max): 7.37mm
Current - Test: 13mA
Lens Color: Red
Voltage - Forward (Vf) (Typ): 5V
Configuration: Standard
Millicandela Rating: 1.5mcd
Mounting Type: Through Hole, Right Angle
Color: Red
Package / Case: Radial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
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| MC74HC245ADWR2G-Q |
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Виробник: onsemi
Description: IC TXRX 2V/6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Description: IC TXRX 2V/6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 22.58 грн |
| MC74HC245ADWR2G-Q |
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Виробник: onsemi
Description: IC TXRX 2V/6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Description: IC TXRX 2V/6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
на замовлення 1980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.03 грн |
| 10+ | 32.30 грн |
| 25+ | 29.01 грн |
| 100+ | 23.81 грн |
| 250+ | 22.19 грн |
| 500+ | 21.21 грн |
| CNW136 |
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Виробник: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Description: OPTOISO 5KV TRANS W/BASE 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
товару немає в наявності
Мінімальне замовлення: 40 шт
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| CNW136S |
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Виробник: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8-SMD
Packaging: Bag
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Description: OPTOISO 5KV TRANS W/BASE 8-SMD
Packaging: Bag
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
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Мінімальне замовлення: 40 шт
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| MC74HC574ADWR2G-Q |
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Виробник: onsemi
Description: IC FF D-TYPE 1-ELE 8-BIT 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
Description: IC FF D-TYPE 1-ELE 8-BIT 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 21.52 грн |
| MC74HC574ADWR2G-Q |
![]() |
Виробник: onsemi
Description: IC FF D-TYPE 1-ELE 8-BIT 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
Description: IC FF D-TYPE 1-ELE 8-BIT 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.68 грн |
| 10+ | 30.87 грн |
| 25+ | 27.69 грн |
| 100+ | 22.72 грн |
| 250+ | 21.16 грн |
| 500+ | 20.22 грн |
| NCP130AMX080TCGEVB |
Виробник: onsemi
Description: NCP130AMX080TC BIAS RAIL LDO REG
Channels per IC: 1 - Single
Utilized IC / Part: NCP130
Regulator Type: Positive Fixed
Current - Output: 850mA
Voltage - Input: 0.8V ~ 5.5V
Voltage - Output: 0.8V
Packaging: Bulk
Description: NCP130AMX080TC BIAS RAIL LDO REG
Channels per IC: 1 - Single
Utilized IC / Part: NCP130
Regulator Type: Positive Fixed
Current - Output: 850mA
Voltage - Input: 0.8V ~ 5.5V
Voltage - Output: 0.8V
Packaging: Bulk
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| NCP130BMX080TCGEVB |
Виробник: onsemi
Description: NCP130BMX080TCG BIAS RAIL LDO RE
Channels per IC: 1 - Single
Utilized IC / Part: NCP130
Regulator Type: Positive Fixed
Current - Output: 850mA
Voltage - Input: 0.8V ~ 5.5V
Voltage - Output: 0.8V
Packaging: Bulk
Description: NCP130BMX080TCG BIAS RAIL LDO RE
Channels per IC: 1 - Single
Utilized IC / Part: NCP130
Regulator Type: Positive Fixed
Current - Output: 850mA
Voltage - Input: 0.8V ~ 5.5V
Voltage - Output: 0.8V
Packaging: Bulk
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| NCV8130BMX080TCGEVB |
Виробник: onsemi
Description: NCV8130BMX080TCG BIAS RAIL LDO R
Channels per IC: 1 - Single
Utilized IC / Part: NCV8130
Regulator Type: Positive Fixed
Voltage - Output: 0.8V
Packaging: Bulk
Description: NCV8130BMX080TCG BIAS RAIL LDO R
Channels per IC: 1 - Single
Utilized IC / Part: NCV8130
Regulator Type: Positive Fixed
Voltage - Output: 0.8V
Packaging: Bulk
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| NCP163ASN280T1GEVB |
Виробник: onsemi
Description: NCP163 SOT23 EVAL BOARD
Channels per IC: 1 - Single
Utilized IC / Part: NCP163
Regulator Type: Positive Fixed
Current - Output: 700mA
Voltage - Input: 2.2V ~ 5.5V
Voltage - Output: 2.8V
Packaging: Bulk
Description: NCP163 SOT23 EVAL BOARD
Channels per IC: 1 - Single
Utilized IC / Part: NCP163
Regulator Type: Positive Fixed
Current - Output: 700mA
Voltage - Input: 2.2V ~ 5.5V
Voltage - Output: 2.8V
Packaging: Bulk
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| FSBB30CH60F |
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Виробник: onsemi
Description: IGBT IPM 600V 30A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
Description: IGBT IPM 600V 30A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
на замовлення 2925 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 1718.38 грн |
| FSBB30CH60F |
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Виробник: onsemi
Description: IGBT IPM 600V 30A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
Description: IGBT IPM 600V 30A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
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| SZBZX84C43ET1G |
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Виробник: onsemi
Description: DIODE ZENER 43V 225MW SOT23-3
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
Description: DIODE ZENER 43V 225MW SOT23-3
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| SZBZX84C43ET1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 43V 225MW SOT23-3
Tolerance: ±7%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
Description: DIODE ZENER 43V 225MW SOT23-3
Tolerance: ±7%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
на замовлення 2930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.89 грн |
| 36+ | 8.60 грн |
| 50+ | 6.11 грн |
| 100+ | 4.98 грн |
| 500+ | 3.63 грн |
| BZX84C43LT1 |
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Виробник: onsemi
Description: DIODE ZENER 43V 225MW SOT23-3
Tolerance: ±7%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Description: DIODE ZENER 43V 225MW SOT23-3
Tolerance: ±7%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
на замовлення 231000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7869+ | 2.68 грн |
| MC74HC4053ADR2G |
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Виробник: onsemi
Description: IC SWITCH SPDT X 3 100OHM 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
Description: IC SWITCH SPDT X 3 100OHM 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
на замовлення 173672 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 834+ | 26.54 грн |
| MC74HC4053ADWR2G |
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Виробник: onsemi
Description: IC SWITCH SPDT X 3 100OHM 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
Description: IC SWITCH SPDT X 3 100OHM 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
на замовлення 20961 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 457+ | 48.64 грн |
| CNY17F3VM |
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Виробник: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 30955 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.52 грн |
| 10+ | 30.27 грн |
| 100+ | 20.02 грн |
| 500+ | 15.03 грн |
| 1000+ | 13.87 грн |
| 2000+ | 12.93 грн |
| 5000+ | 11.74 грн |
| 10000+ | 11.15 грн |
| 25000+ | 10.53 грн |
| CNY17F3300W |
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Виробник: onsemi
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-DIP
Current - DC Forward (If) (Max): 100 mA
Number of Channels: 1
Rise / Fall Time (Typ): 1µs, 2µs
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5300Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Tube
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-DIP
Current - DC Forward (If) (Max): 100 mA
Number of Channels: 1
Rise / Fall Time (Typ): 1µs, 2µs
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5300Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| CNY17F3S |
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Виробник: onsemi
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 100 mA
Number of Channels: 1
Rise / Fall Time (Typ): 1µs, 2µs
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5300Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 100 mA
Number of Channels: 1
Rise / Fall Time (Typ): 1µs, 2µs
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5300Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
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В кошику
од. на суму грн.
| CNY17F3W |
![]() |
Виробник: onsemi
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 1µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 1µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
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В кошику
од. на суму грн.
| MB8S |
![]() |
Виробник: onsemi
Description: BRIDGE RECT 1P 800V 500MA 4-SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1P 800V 500MA 4-SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 378000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.25 грн |
| 6000+ | 9.01 грн |
| MB8S |
![]() |
Виробник: onsemi
Description: BRIDGE RECT 1P 800V 500MA 4-SOIC
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1P 800V 500MA 4-SOIC
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 378417 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.68 грн |
| 12+ | 26.72 грн |
| 50+ | 19.44 грн |
| 100+ | 16.04 грн |
| 500+ | 12.13 грн |





























