| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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1N4004G | onsemi |
Description: DIODE STANDARD 400V 1A AXIALPackaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 52966 шт: термін постачання 21-31 дні (днів) |
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1.5KE16A | onsemi |
Description: TVS DIODE 13.6VWM 22.5VC AXIALPackaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 67A Voltage - Reverse Standoff (Typ): 13.6V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.2V Voltage - Clamping (Max) @ Ipp: 22.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FFSB20120A | onsemi |
Description: DIODE SIL CARB 1200V 32A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1220pF @ 1V, 100KHz Current - Average Rectified (Io): 32A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FFSB20120A | onsemi |
Description: DIODE SIL CARB 1200V 32A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1220pF @ 1V, 100KHz Current - Average Rectified (Io): 32A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 265 шт: термін постачання 21-31 дні (днів) |
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FFSH20120A-F085 | onsemi |
Description: DIODE SIL CARB 1.2KV 30A TO247-2Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1220pF @ 1V, 100KHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 8048 шт: термін постачання 21-31 дні (днів) |
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FFSB20120A-F085 | onsemi |
Description: DIODE SIL CARB 1200V 32A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1220pF @ 1V, 100KHz Current - Average Rectified (Io): 32A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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FFSB20120A-F085 | onsemi |
Description: DIODE SIL CARB 1200V 32A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1220pF @ 1V, 100KHz Current - Average Rectified (Io): 32A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 2363 шт: термін постачання 21-31 дні (днів) |
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FFSH40120ADN-F085 | onsemi |
Description: DIODE SIL CARB 1200V 25A TO2473Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1220pF @ 1V, 100KHz Current - Average Rectified (Io): 25A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 410 шт: термін постачання 21-31 дні (днів) |
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FDS9431A-TF085 | onsemi |
Description: P-CHANNEL 2.5V SPECIFIED MOSFET,Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ISL9V5036S3ST-F085C | onsemi |
Description: IGBT 390V 46A TO-263Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Reverse Recovery Time (trr): 2.1 µs Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 700ns/10.8µs Gate Charge: 32 nC Grade: Automotive Current - Collector (Ic) (Max): 46 A Voltage - Collector Emitter Breakdown (Max): 390 V Power - Max: 250 W Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MTBV30P06VT4G | onsemi |
Description: POWER MOSFET -60V -30A 80 MOHM SPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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H11AA1 | onsemi |
Description: OPTOISO 5.3KV TRANS W/BASE 6-DIPPackaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: AC, DC Voltage - Isolation: 5300Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Number of Channels: 1 Current - DC Forward (If) (Max): 100 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD233STU | onsemi |
Description: TRANS NPN 45V 2A TO-126-3Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V Frequency - Transition: 3MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 25 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KSD363R | onsemi |
Description: TRANS NPN 120V 6A TO-220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V Frequency - Transition: 10MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 40 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 2N5415 | onsemi |
Description: TRANS PNP 200V 0.1A TO-39Package / Case: TO-39 Mounting Type: Through Hole Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5mA, 50mA Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-39 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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CAS34TS00VP2GT4A | onsemi |
Description: TEMP SENSOR WITH NO MEMORY Packaging: Tape & Reel (TR) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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CAS34TS00VP2GT4A | onsemi |
Description: TEMP SENSOR WITH NO MEMORY Packaging: Cut Tape (CT) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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MC74HC4053DR2 | onsemi |
Description: ANALOG MUX TRIPLE 2:1Packaging: Bulk |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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SBRD8320G-VF01 | onsemi |
Description: DIODE SCHOTTKY 20V 3A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 20 V Qualification: AEC-Q101 |
на замовлення 5775 шт: термін постачання 21-31 дні (днів) |
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SBRD8320G-VF01 | onsemi |
Description: DIODE SCHOTTKY 20V 3A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBRD320G | onsemi |
Description: DIODE SCHOTTKY 20V 3A DPAKPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 20 V |
на замовлення 7814 шт: термін постачання 21-31 дні (днів) |
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SBRD8320G | onsemi |
Description: DIODE SCHOTTKY 20V 3A DPAKPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 20 V |
на замовлення 3525 шт: термін постачання 21-31 дні (днів) |
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NTTFS5C454NLTWG | onsemi |
Description: MOSFET N-CH 40V 20A/85A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTTFS5C454NLTWG | onsemi |
Description: MOSFET N-CH 40V 20A/85A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
на замовлення 4975 шт: термін постачання 21-31 дні (днів) |
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| TIP145 | onsemi |
Description: TRANS PNP DARL 60V 10A SOT-93Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Supplier Device Package: SOT-93 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 125 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74VHCT574ADT | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPPackaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Positive Edge Clock Frequency: 130 MHz Input Capacitance: 4 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF Number of Bits per Element: 8 |
на замовлення 20550 шт: термін постачання 21-31 дні (днів) |
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MC74VHCT574ADTR2 | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPPackaging: Bulk Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Positive Edge Clock Frequency: 130 MHz Input Capacitance: 4 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF Number of Bits per Element: 8 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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MC74VHCT574ADTG | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPPackaging: Bulk Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Positive Edge Clock Frequency: 130 MHz Input Capacitance: 4 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF Number of Bits per Element: 8 |
на замовлення 19050 шт: термін постачання 21-31 дні (днів) |
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74VHCT574AMTC | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPPackaging: Bulk Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Positive Edge Clock Frequency: 130 MHz Input Capacitance: 4 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF Number of Bits per Element: 8 |
на замовлення 6942 шт: термін постачання 21-31 дні (днів) |
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74VHCT574AMTC | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPPackaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Positive Edge Clock Frequency: 130 MHz Input Capacitance: 4 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF Number of Bits per Element: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74VHCT574ADWG | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20SOICPackaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Positive Edge Clock Frequency: 130 MHz Input Capacitance: 4 pF Supplier Device Package: 20-SOIC Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF Number of Bits per Element: 8 |
на замовлення 14653 шт: термін постачання 21-31 дні (днів) |
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74VHCT574AM | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20SOICPackaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Positive Edge Clock Frequency: 130 MHz Input Capacitance: 4 pF Supplier Device Package: 20-SOIC Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF Number of Bits per Element: 8 |
на замовлення 212 шт: термін постачання 21-31 дні (днів) |
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74VHCT574AM | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20SOICPackaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Positive Edge Clock Frequency: 130 MHz Input Capacitance: 4 pF Supplier Device Package: 20-SOIC Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF Number of Bits per Element: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ADP3412JR | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C (TJ) Voltage - Supply: 4.15V ~ 7.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 30 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 20ns, 20ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LM348DR2 | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14SOPPackaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: 0°C ~ 70°C Current - Supply: 2.4mA Slew Rate: 0.5V/µs Gain Bandwidth Product: 1 MHz Current - Input Bias: 30 nA Voltage - Input Offset: 1 mV Supplier Device Package: 14-SOP Number of Circuits: 4 Current - Output / Channel: 25 mA Voltage - Supply Span (Min): 36 V Voltage - Supply Span (Max): 36 V |
на замовлення 13585 шт: термін постачання 21-31 дні (днів) |
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NCV7420D26R2G | onsemi |
Description: IC TRANSCEIVER HALF 1/1 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3.3V, 5V Number of Drivers/Receivers: 1/1 Protocol: LINbus Supplier Device Package: 14-SOIC Receiver Hysteresis: 175 mV Duplex: Half |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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NCV7420D26R2G | onsemi |
Description: IC TRANSCEIVER HALF 1/1 14SOICPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3.3V, 5V Number of Drivers/Receivers: 1/1 Protocol: LINbus Supplier Device Package: 14-SOIC Receiver Hysteresis: 175 mV Duplex: Half |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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NCV7420D24R2G | onsemi |
Description: IC TRANSCEIVER HALF 1/1 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3.3V, 5V Number of Drivers/Receivers: 1/1 Protocol: LINbus Supplier Device Package: 14-SOIC Receiver Hysteresis: 175 mV Duplex: Half Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV7420D24R2G | onsemi |
Description: IC TRANSCEIVER HALF 1/1 14SOICPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3.3V, 5V Number of Drivers/Receivers: 1/1 Protocol: LINbus Supplier Device Package: 14-SOIC Receiver Hysteresis: 175 mV Duplex: Half Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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NCV7420D25G | onsemi |
Description: IC TRANSCEIVER HALF 1/1 14SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3.3V, 5V Number of Drivers/Receivers: 1/1 Protocol: LINbus Supplier Device Package: 14-SOIC Receiver Hysteresis: 175 mV Duplex: Half Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV7420D25R2G | onsemi |
Description: IC TRANSCEIVER HALF 1/1 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3.3V, 5V Number of Drivers/Receivers: 1/1 Protocol: LINbus Supplier Device Package: 14-SOIC Receiver Hysteresis: 175 mV Duplex: Half Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FFA60UP30DNTU | onsemi |
Description: DIODE ARRAY GP 300V 30A TO-3PPackaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-3P Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 300 V |
на замовлення 192765 шт: термін постачання 21-31 дні (днів) |
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BFL4001 | onsemi |
Description: MOSFET N-CH 900V 4.1A TO220FIPackaging: Bag Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 3.25A, 10V Power Dissipation (Max): 2W (Ta), 37W (Tc) Supplier Device Package: TO-220FI(LS) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BFL4037 | onsemi |
Description: MOSFET N-CH 500V 11A TO220FIPackaging: Bag Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 40W (Tc) Supplier Device Package: TO-220FI(LS) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 48.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MUR460 | onsemi |
Description: DIODE STANDARD 600V 4A AXIALPackaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74AC139PC | onsemi |
Description: IC DECODER/DEMUX 1X2:4 16DIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Circuit: 1 x 2:4 Type: Decoder/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Independent Circuits: 2 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Supplier Device Package: 16-PDIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74AC139SJ | onsemi |
Description: IC DECODER/DEMUX 1X2:4 16SOPPackaging: Tube Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Circuit: 1 x 2:4 Type: Decoder/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Independent Circuits: 2 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74AC139SJX | onsemi |
Description: IC DECODER/DEMUX 1X2:4 16SOPPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Circuit: 1 x 2:4 Type: Decoder/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Independent Circuits: 2 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74AC139MTC | onsemi |
Description: IC DECODER/DEMUX 1X2:4 16TSSOPPackaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 2:4 Type: Decoder/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Independent Circuits: 2 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCN26000XMNTBG | onsemi |
Description: 10BASE-T1S SINGLE PAIR ETHERNERTPackaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Function: Controller Interface: MII Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.97V ~ 3.63V Protocol: Ethernet Standards: IEEE 802.3, 10 Base-T PHY Supplier Device Package: 32-QFNW (5x5) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZMMSZ2V7ET1G | onsemi |
Description: DIODE ZENER 2.7V 500MW SOD123Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 2.7 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 20 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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SZMMSZ2V7ET1G | onsemi |
Description: DIODE ZENER 2.7V 500MW SOD123Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 2.7 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 20 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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WDK1.0GEVK | onsemi |
Description: WEARABLE REF DESIGN & DEV KITPackaging: Box Type: Watch Specifications: Watch, Docking Station, Wristband, Cable Main Purpose: Interface |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDH3595 | onsemi |
Description: DIODE STANDARD 125V 200MA DO35Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 8pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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FAN3121CMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 18V Input Type: Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 23ns, 19ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 10.6A, 11.4A Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 275 шт: термін постачання 21-31 дні (днів) |
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KSD5041QTA | onsemi |
Description: TRANS NPN 20V 5A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 500mA, 2V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 750 mW |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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SN74LS251D | onsemi |
Description: IC MULTIPLEXER 1 X 8:1 16-SOICPackaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 1 x 8:1 Type: Multiplexer Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Independent Circuits: 1 Current - Output High, Low: 2.6mA, 8mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SOIC |
на замовлення 4584 шт: термін постачання 21-31 дні (днів) |
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1N5375B | onsemi |
Description: DIODE ZENER 82V 5W AXIALPackaging: Bulk Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 65 Ohms Supplier Device Package: Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 62.2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SJD127T4G | onsemi |
Description: TRANS PNP DARL 100V 8A DPAKPackaging: Tape & Reel (TR) |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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| SJD127T4G | onsemi |
Description: TRANS PNP DARL 100V 8A DPAKPackaging: Cut Tape (CT) |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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| 1N4004G |
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Виробник: onsemi
Description: DIODE STANDARD 400V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 52966 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 9.48 грн |
| 65+ | 5.08 грн |
| 100+ | 4.67 грн |
| 500+ | 3.50 грн |
| 1000+ | 2.86 грн |
| 2000+ | 2.62 грн |
| 5000+ | 2.34 грн |
| 10000+ | 2.11 грн |
| 50000+ | 2.08 грн |
| 1.5KE16A |
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Виробник: onsemi
Description: TVS DIODE 13.6VWM 22.5VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 67A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 13.6VWM 22.5VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 67A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| FFSB20120A |
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Виробник: onsemi
Description: DIODE SIL CARB 1200V 32A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1200V 32A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| FFSB20120A |
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Виробник: onsemi
Description: DIODE SIL CARB 1200V 32A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1200V 32A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 265 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 665.95 грн |
| 10+ | 439.06 грн |
| 100+ | 350.75 грн |
| FFSH20120A-F085 |
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Виробник: onsemi
Description: DIODE SIL CARB 1.2KV 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 1.2KV 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 8048 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 813.28 грн |
| 30+ | 572.81 грн |
| FFSB20120A-F085 |
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Виробник: onsemi
Description: DIODE SIL CARB 1200V 32A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 1200V 32A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 587.87 грн |
| FFSB20120A-F085 |
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Виробник: onsemi
Description: DIODE SIL CARB 1200V 32A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 1200V 32A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 2363 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1036.40 грн |
| 10+ | 700.74 грн |
| 100+ | 625.46 грн |
| FFSH40120ADN-F085 |
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Виробник: onsemi
Description: DIODE SIL CARB 1200V 25A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 1200V 25A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 410 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1135.18 грн |
| 10+ | 977.35 грн |
| FDS9431A-TF085 |
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Виробник: onsemi
Description: P-CHANNEL 2.5V SPECIFIED MOSFET,
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Qualification: AEC-Q101
Description: P-CHANNEL 2.5V SPECIFIED MOSFET,
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Qualification: AEC-Q101
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| ISL9V5036S3ST-F085C |
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Виробник: onsemi
Description: IGBT 390V 46A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/10.8µs
Gate Charge: 32 nC
Grade: Automotive
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Power - Max: 250 W
Qualification: AEC-Q101
Description: IGBT 390V 46A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/10.8µs
Gate Charge: 32 nC
Grade: Automotive
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Power - Max: 250 W
Qualification: AEC-Q101
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| MTBV30P06VT4G |
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Виробник: onsemi
Description: POWER MOSFET -60V -30A 80 MOHM S
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 10 V
Qualification: AEC-Q101
Description: POWER MOSFET -60V -30A 80 MOHM S
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 10 V
Qualification: AEC-Q101
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| H11AA1 |
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Виробник: onsemi
Description: OPTOISO 5.3KV TRANS W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Description: OPTOISO 5.3KV TRANS W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
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| BD233STU |
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Виробник: onsemi
Description: TRANS NPN 45V 2A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 25 W
Description: TRANS NPN 45V 2A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 25 W
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| KSD363R |
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Виробник: onsemi
Description: TRANS NPN 120V 6A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 40 W
Description: TRANS NPN 120V 6A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 40 W
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| 2N5415 |
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Виробник: onsemi
Description: TRANS PNP 200V 0.1A TO-39
Package / Case: TO-39
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1 W
Description: TRANS PNP 200V 0.1A TO-39
Package / Case: TO-39
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1 W
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| CAS34TS00VP2GT4A |
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 35.27 грн |
| 8000+ | 32.76 грн |
| CAS34TS00VP2GT4A |
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.98 грн |
| 6+ | 55.93 грн |
| 10+ | 52.40 грн |
| 25+ | 45.34 грн |
| 50+ | 42.77 грн |
| 100+ | 40.50 грн |
| 500+ | 35.52 грн |
| 1000+ | 33.98 грн |
| MC74HC4053DR2 |
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на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1137+ | 19.12 грн |
| SBRD8320G-VF01 |
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 20V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Qualification: AEC-Q101
на замовлення 5775 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 798+ | 30.98 грн |
| SBRD8320G-VF01 |
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 20V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Qualification: AEC-Q101
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| MBRD320G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 20V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Description: DIODE SCHOTTKY 20V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
на замовлення 7814 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 721+ | 32.99 грн |
| SBRD8320G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 20V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Description: DIODE SCHOTTKY 20V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
на замовлення 3525 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 638+ | 38.40 грн |
| NTTFS5C454NLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 20A/85A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 40V 20A/85A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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| NTTFS5C454NLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 20A/85A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 40V 20A/85A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 4975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 228.23 грн |
| 10+ | 138.75 грн |
| 25+ | 117.66 грн |
| 100+ | 87.99 грн |
| 250+ | 76.98 грн |
| 500+ | 70.20 грн |
| 1000+ | 63.47 грн |
| 2500+ | 57.46 грн |
| TIP145 |
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Виробник: onsemi
Description: TRANS PNP DARL 60V 10A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 125 W
Description: TRANS PNP DARL 60V 10A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 125 W
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| MC74VHCT574ADT |
![]() |
Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
Number of Bits per Element: 8
на замовлення 20550 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2049+ | 12.26 грн |
| MC74VHCT574ADTR2 |
![]() |
Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
Number of Bits per Element: 8
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2049+ | 12.26 грн |
| MC74VHCT574ADTG |
![]() |
Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
Number of Bits per Element: 8
на замовлення 19050 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 915+ | 26.96 грн |
| 74VHCT574AMTC |
![]() |
Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
Number of Bits per Element: 8
на замовлення 6942 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 895+ | 27.78 грн |
| 74VHCT574AMTC |
![]() |
Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
Number of Bits per Element: 8
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| MC74VHCT574ADWG |
![]() |
Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
Number of Bits per Element: 8
на замовлення 14653 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 741+ | 33.50 грн |
| 74VHCT574AM |
![]() |
Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
Number of Bits per Element: 8
на замовлення 212 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 89.42 грн |
| 10+ | 76.43 грн |
| 25+ | 72.53 грн |
| 100+ | 55.92 грн |
| 74VHCT574AM |
![]() |
Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
Number of Bits per Element: 8
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од. на суму грн.
| ADP3412JR |
![]() |
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 4.15V ~ 7.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 30 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 4.15V ~ 7.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 30 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
DigiKey Programmable: Not Verified
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од. на суму грн.
| LM348DR2 |
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Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Current - Supply: 2.4mA
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 30 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 25 mA
Voltage - Supply Span (Min): 36 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Current - Supply: 2.4mA
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 30 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 25 mA
Voltage - Supply Span (Min): 36 V
Voltage - Supply Span (Max): 36 V
на замовлення 13585 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1069+ | 20.59 грн |
| NCV7420D26R2G |
![]() |
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.3V, 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 14-SOIC
Receiver Hysteresis: 175 mV
Duplex: Half
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.3V, 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 14-SOIC
Receiver Hysteresis: 175 mV
Duplex: Half
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 66.68 грн |
| NCV7420D26R2G |
![]() |
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.3V, 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 14-SOIC
Receiver Hysteresis: 175 mV
Duplex: Half
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.3V, 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 14-SOIC
Receiver Hysteresis: 175 mV
Duplex: Half
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 234.19 грн |
| 10+ | 142.61 грн |
| 25+ | 121.04 грн |
| 100+ | 90.61 грн |
| 250+ | 79.33 грн |
| 500+ | 72.39 грн |
| 1000+ | 65.49 грн |
| NCV7420D24R2G |
![]() |
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.3V, 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 14-SOIC
Receiver Hysteresis: 175 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.3V, 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 14-SOIC
Receiver Hysteresis: 175 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
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од. на суму грн.
| NCV7420D24R2G |
![]() |
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.3V, 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 14-SOIC
Receiver Hysteresis: 175 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.3V, 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 14-SOIC
Receiver Hysteresis: 175 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 233.34 грн |
| 10+ | 142.28 грн |
| 25+ | 120.65 грн |
| 100+ | 90.33 грн |
| 250+ | 79.08 грн |
| 500+ | 72.16 грн |
| 1000+ | 65.27 грн |
| NCV7420D25G |
![]() |
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.3V, 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 14-SOIC
Receiver Hysteresis: 175 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.3V, 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 14-SOIC
Receiver Hysteresis: 175 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
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| NCV7420D25R2G |
![]() |
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.3V, 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 14-SOIC
Receiver Hysteresis: 175 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.3V, 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 14-SOIC
Receiver Hysteresis: 175 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
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| FFA60UP30DNTU |
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Виробник: onsemi
Description: DIODE ARRAY GP 300V 30A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Description: DIODE ARRAY GP 300V 30A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
на замовлення 192765 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 163+ | 150.33 грн |
| BFL4001 |
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Виробник: onsemi
Description: MOSFET N-CH 900V 4.1A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Supplier Device Package: TO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 30 V
Description: MOSFET N-CH 900V 4.1A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Supplier Device Package: TO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 30 V
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| BFL4037 |
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Виробник: onsemi
Description: MOSFET N-CH 500V 11A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Description: MOSFET N-CH 500V 11A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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| MUR460 |
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Виробник: onsemi
Description: DIODE STANDARD 600V 4A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 4A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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| 74AC139PC |
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Виробник: onsemi
Description: IC DECODER/DEMUX 1X2:4 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 2
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-PDIP
Description: IC DECODER/DEMUX 1X2:4 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 2
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-PDIP
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| 74AC139SJ |
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Виробник: onsemi
Description: IC DECODER/DEMUX 1X2:4 16SOP
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 2
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOP
Description: IC DECODER/DEMUX 1X2:4 16SOP
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 2
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOP
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| 74AC139SJX |
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Виробник: onsemi
Description: IC DECODER/DEMUX 1X2:4 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 2
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOP
Description: IC DECODER/DEMUX 1X2:4 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 2
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOP
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| 74AC139MTC |
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Виробник: onsemi
Description: IC DECODER/DEMUX 1X2:4 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 2
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Description: IC DECODER/DEMUX 1X2:4 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 2
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
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| NCN26000XMNTBG |
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Виробник: onsemi
Description: 10BASE-T1S SINGLE PAIR ETHERNERT
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Function: Controller
Interface: MII
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.97V ~ 3.63V
Protocol: Ethernet
Standards: IEEE 802.3, 10 Base-T PHY
Supplier Device Package: 32-QFNW (5x5)
Description: 10BASE-T1S SINGLE PAIR ETHERNERT
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Function: Controller
Interface: MII
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.97V ~ 3.63V
Protocol: Ethernet
Standards: IEEE 802.3, 10 Base-T PHY
Supplier Device Package: 32-QFNW (5x5)
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| SZMMSZ2V7ET1G |
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Виробник: onsemi
Description: DIODE ZENER 2.7V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 2.7V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.45 грн |
| 6000+ | 5.82 грн |
| 9000+ | 5.43 грн |
| 15000+ | 4.98 грн |
| 21000+ | 4.80 грн |
| 30000+ | 4.75 грн |
| SZMMSZ2V7ET1G |
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Виробник: onsemi
Description: DIODE ZENER 2.7V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 2.7V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.25 грн |
| 19+ | 17.55 грн |
| 100+ | 9.13 грн |
| 500+ | 8.05 грн |
| 1000+ | 7.53 грн |
| WDK1.0GEVK |
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Виробник: onsemi
Description: WEARABLE REF DESIGN & DEV KIT
Packaging: Box
Type: Watch
Specifications: Watch, Docking Station, Wristband, Cable
Main Purpose: Interface
Description: WEARABLE REF DESIGN & DEV KIT
Packaging: Box
Type: Watch
Specifications: Watch, Docking Station, Wristband, Cable
Main Purpose: Interface
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| FDH3595 |
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Виробник: onsemi
Description: DIODE STANDARD 125V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Description: DIODE STANDARD 125V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 18.74 грн |
| 31+ | 10.91 грн |
| 100+ | 5.97 грн |
| 500+ | 4.19 грн |
| 1000+ | 3.73 грн |
| 2000+ | 3.49 грн |
| 5000+ | 3.20 грн |
| 10000+ | 2.74 грн |
| FAN3121CMX-F085 |
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Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 23ns, 19ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 10.6A, 11.4A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 23ns, 19ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 10.6A, 11.4A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 275 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 311.69 грн |
| 10+ | 193.21 грн |
| 25+ | 165.45 грн |
| 100+ | 125.79 грн |
| 250+ | 111.32 грн |
| KSD5041QTA |
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Виробник: onsemi
Description: TRANS NPN 20V 5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 750 mW
Description: TRANS NPN 20V 5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 750 mW
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3328+ | 7.31 грн |
| SN74LS251D |
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Виробник: onsemi
Description: IC MULTIPLEXER 1 X 8:1 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Multiplexer
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 1
Current - Output High, Low: 2.6mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Description: IC MULTIPLEXER 1 X 8:1 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Multiplexer
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 1
Current - Output High, Low: 2.6mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
на замовлення 4584 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 485+ | 46.24 грн |
| 1N5375B |
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Виробник: onsemi
Description: DIODE ZENER 82V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 62.2 V
Description: DIODE ZENER 82V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 62.2 V
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