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FFAF20U60DNTU FFAF20U60DNTU onsemi FFAF20U60DN.pdf Description: DIODE ARRAY GP 600V 20A TO3PF
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FQPF10N60C FQPF10N60C onsemi fqp10n60c-d.pdf description Description: MOSFET N-CH 600V 9.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
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FQPF45N15V2 FQPF45N15V2 onsemi fqpf45n15v2-d.pdf Description: MOSFET N-CH 150V 45A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22.5A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V
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HCPL2601WV HCPL2601WV onsemi hcpl2631-d.pdf Description: OPTOISO 3.75KV OPN COLL 8-MDIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-MDIP
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
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HCPL2601SV HCPL2601SV onsemi ONSM-S-A0006115631-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 2.5KV OPN COLLECTOR 8SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
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FJA4210RTU FJA4210RTU onsemi FJA4210.pdf Description: TRANS PNP 140V 10A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
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FQPF12N60CT FQPF12N60CT onsemi FQP%2CFQPF12N60C.pdf Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
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RHRP15120 RHRP15120 onsemi rhrp15120-d.pdf Description: DIODE STANDARD 1200V 15A TO2202L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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FQB10N60CTM FQB10N60CTM onsemi FQB10N60C%2C%20FQI10N60C.pdf Description: MOSFET N-CH 600V 9.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
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FIN1028M FIN1028M onsemi FAIRS26464-1.pdf?t.download=true&u=5oefqw Description: IC RECEIVER 0/2 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/2
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 8-SOIC
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FST162861MTDX FST162861MTDX onsemi FST162861.pdf Description: IC BUS SWITCH 10 X 1:1 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Circuit: 10 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 48-TSSOP
Part Status: Obsolete
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KA5H0365RYDTU KA5H0365RYDTU onsemi ka5h0380r-d.pdf Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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KA5H0280RYDTU KA5H0280RYDTU onsemi KA5x02xx.pdf Description: IC OFFLINE SW MULT TOP TO220F
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FIN1027AMX FIN1027AMX onsemi fin1027a-d.pdf Description: IC TRANSCEIVER 2/0 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 2/0
Data Rate: 600Mbps
Protocol: LVDS
Supplier Device Package: 8-SOIC
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
2500+25.84 грн
5000+22.94 грн
7500+21.95 грн
12500+19.98 грн
Мінімальне замовлення: 2500
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KA5H0280RTU KA5H0280RTU onsemi KA5x02xx.pdf Description: IC OFFLINE SW MULT TOP TO220F
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KA5M0365RYDTU KA5M0365RYDTU onsemi ka5h0380r-d.pdf Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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KA5H0365RTU KA5H0365RTU onsemi ka5h0380r-d.pdf Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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KA5M0365RTU KA5M0365RTU onsemi ka5h0380r-d.pdf Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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FIN1028MX FIN1028MX onsemi FIN1028-D.PDF Description: IC TRANSCEIVER 0/2 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/2
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 8-SOIC
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
2500+34.55 грн
5000+30.87 грн
7500+30.44 грн
Мінімальне замовлення: 2500
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KA5M0280RTU KA5M0280RTU onsemi KA5x02xx.pdf Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 8.8V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Obsolete
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HUF76633S3S HUF76633S3S onsemi HUF76633P3%2CS3S.pdf Description: MOSFET N-CH 100V 39A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
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FQP55N10 FQP55N10 onsemi fqp55n10-d.pdf Description: MOSFET N-CH 100V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
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HCPL2601SDV HCPL2601SDV onsemi ONSM-S-A0006115631-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 2.5KV OPN COLLECTOR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
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HCPL0701R1V HCPL0701R1V onsemi hcpl0731-d.pdf Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
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HCPL0701R1 HCPL0701R1 onsemi hcpl0731-d.pdf Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
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HCPL0701R2 HCPL0701R2 onsemi hcpl0731-d.pdf Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
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HUFA75333P3 HUFA75333P3 onsemi HUFA75333G3%2C%20P3%2C%20S3S.pdf Description: MOSFET N-CH 55V 66A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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HUFA76432S3S HUFA76432S3S onsemi HUFA76432P3%3B%20HUFA76432S3S%28T%29.pdf Description: MOSFET N-CH 60V 59A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 25 V
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FQPF12N60C FQPF12N60C onsemi FQP%2CFQPF12N60C.pdf Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
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MM74C04MX MM74C04MX onsemi MM74C00,02,04.pdf Description: IC INVERTER 6CH 6-INP 14SOIC
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MM74C04M MM74C04M onsemi MM74C00,02,04.pdf Description: IC INVERTER 6CH 6-INP 14SOIC
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FQA44N10 FQA44N10 onsemi FQA44N10.pdf Description: MOSFET N-CH 100V 48A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 24A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
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HCPL0701 HCPL0701 onsemi hcpl0731-d.pdf Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
на замовлення 3422 шт:
термін постачання 21-31 дні (днів)
2+198.95 грн
50+115.23 грн
100+107.48 грн
500+87.91 грн
1000+83.69 грн
2000+80.12 грн
Мінімальне замовлення: 2
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FJAF6810ATU FJAF6810ATU onsemi Description: TRANS NPN 750V 10A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.5A, 6A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 6A, 5V
Supplier Device Package: TO-3PF
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 60 W
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FJAF6810DYDTBTU FJAF6810DYDTBTU onsemi FJAF6810D.PDF Description: TRANS NPN 750V 10A TO-3PF
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KA5M0380RTU KA5M0380RTU onsemi ka5h0380r-d.pdf Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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KA5L0380RTU KA5L0380RTU onsemi ka5h0380r-d.pdf Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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KA5H0380RYDTU KA5H0380RYDTU onsemi ka5h0380r-d.pdf Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
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KA5L0380RYDTU KA5L0380RYDTU onsemi Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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FQPF7N60 FQPF7N60 onsemi fqpf7n60-d.pdf Description: MOSFET N-CH 600V 4.3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.2A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
2+218.05 грн
Мінімальне замовлення: 2
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KA5M0380RYDTU KA5M0380RYDTU onsemi ka5h0380r-d.pdf Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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KA5H0380RTU KA5H0380RTU onsemi ka5h0380r-d.pdf Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
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FQP7N60 FQP7N60 onsemi FQP7N60.pdf Description: MOSFET N-CH 600V 7.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.7A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
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FQAF11N40 FQAF11N40 onsemi FQAF11N40.pdf Description: MOSFET N-CH 400V 8.8A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.4A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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FQP5N90 FQP5N90 onsemi FQP5N90.pdf Description: MOSFET N-CH 900V 5.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
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FJAF6810AYDTBTU FJAF6810AYDTBTU onsemi Description: TRANS NPN 750V 10A TO3PF
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FQAF65N06 FQAF65N06 onsemi FQAF65N06.pdf Description: MOSFET N-CH 60V 49A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 24.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
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FQB6N80TM FQB6N80TM onsemi fqb6n80-d.pdf Description: MOSFET N-CH 800V 5.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 2.9A, 10V
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
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FQPF47P06 FQPF47P06 onsemi fqpf47p06-d.pdf Description: MOSFET P-CH 60V 30A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
на замовлення 430 шт:
термін постачання 21-31 дні (днів)
2+311.96 грн
50+153.65 грн
100+139.46 грн
Мінімальне замовлення: 2
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FQPF27N25 FQPF27N25 onsemi fqpf27n25-d.pdf Description: MOSFET N-CH 250V 14A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 7A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
на замовлення 206 шт:
термін постачання 21-31 дні (днів)
2+243.52 грн
50+131.23 грн
100+127.62 грн
Мінімальне замовлення: 2
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HUFA75637P3 HUFA75637P3 onsemi HUFA75637P3%2CHUFA75637S3S.pdf Description: MOSFET N-CH 100V 44A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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FQPF55N10 FQPF55N10 onsemi FQPF55N10.pdf Description: MOSFET N-CH 100V 34.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.2A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 17.1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
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FIN1019MTC FIN1019MTC onsemi FIN1019.pdf Description: IC TRANSCEIVER FULL 1/1 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 14-TSSOP
Duplex: Full
Part Status: Obsolete
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FMS6400CS FMS6400CS onsemi FMS6400.pdf Description: IC VIDEO DRIVER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Standards: PAL
Supplier Device Package: 8-SOIC
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FQPF5N90 FQPF5N90 onsemi fqpf5n90-d.pdf Description: MOSFET N-CH 900V 3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
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FIN1019MTCX FIN1019MTCX onsemi FIN1019.pdf Description: IC TRANSCEIVER FULL 1/1 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 14-TSSOP
Duplex: Full
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+66.19 грн
Мінімальне замовлення: 2500
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FMS6400CS1 FMS6400CS1 onsemi FMS6400.pdf Description: IC VIDEO DRIVER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Standards: PAL
Supplier Device Package: 8-SOIC
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ISL9R8120S3ST ISL9R8120S3ST onsemi ISL9R8120P2%2CISL9R8120S3S.pdf Description: DIODE GEN PURP 1.2KV 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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HUFA76633S3S HUFA76633S3S onsemi HUFA76633P3%2CS3S.pdf Description: MOSFET N-CH 100V 39A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
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FFA20U60DNTU FFA20U60DNTU onsemi FFA20U60DN.pdf Description: DIODE ARRAY GP 600V 20A TO3P
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FFAF20U60DNTU FFAF20U60DN.pdf
FFAF20U60DNTU
Виробник: onsemi
Description: DIODE ARRAY GP 600V 20A TO3PF
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FQPF10N60C description fqp10n60c-d.pdf
FQPF10N60C
Виробник: onsemi
Description: MOSFET N-CH 600V 9.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
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FQPF45N15V2 fqpf45n15v2-d.pdf
FQPF45N15V2
Виробник: onsemi
Description: MOSFET N-CH 150V 45A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22.5A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V
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HCPL2601WV hcpl2631-d.pdf
HCPL2601WV
Виробник: onsemi
Description: OPTOISO 3.75KV OPN COLL 8-MDIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-MDIP
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
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HCPL2601SV ONSM-S-A0006115631-1.pdf?t.download=true&u=5oefqw
HCPL2601SV
Виробник: onsemi
Description: OPTOISO 2.5KV OPN COLLECTOR 8SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
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FJA4210RTU FJA4210.pdf
FJA4210RTU
Виробник: onsemi
Description: TRANS PNP 140V 10A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
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FQPF12N60CT FQP%2CFQPF12N60C.pdf
FQPF12N60CT
Виробник: onsemi
Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
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RHRP15120 rhrp15120-d.pdf
RHRP15120
Виробник: onsemi
Description: DIODE STANDARD 1200V 15A TO2202L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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FQB10N60CTM FQB10N60C%2C%20FQI10N60C.pdf
FQB10N60CTM
Виробник: onsemi
Description: MOSFET N-CH 600V 9.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
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FIN1028M FAIRS26464-1.pdf?t.download=true&u=5oefqw
FIN1028M
Виробник: onsemi
Description: IC RECEIVER 0/2 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/2
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 8-SOIC
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FST162861MTDX FST162861.pdf
FST162861MTDX
Виробник: onsemi
Description: IC BUS SWITCH 10 X 1:1 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Circuit: 10 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 48-TSSOP
Part Status: Obsolete
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KA5H0365RYDTU ka5h0380r-d.pdf
KA5H0365RYDTU
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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KA5H0280RYDTU KA5x02xx.pdf
KA5H0280RYDTU
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
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FIN1027AMX fin1027a-d.pdf
FIN1027AMX
Виробник: onsemi
Description: IC TRANSCEIVER 2/0 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 2/0
Data Rate: 600Mbps
Protocol: LVDS
Supplier Device Package: 8-SOIC
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+25.84 грн
5000+22.94 грн
7500+21.95 грн
12500+19.98 грн
Мінімальне замовлення: 2500
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KA5H0280RTU KA5x02xx.pdf
KA5H0280RTU
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
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KA5M0365RYDTU ka5h0380r-d.pdf
KA5M0365RYDTU
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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KA5H0365RTU ka5h0380r-d.pdf
KA5H0365RTU
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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KA5M0365RTU ka5h0380r-d.pdf
KA5M0365RTU
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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FIN1028MX FIN1028-D.PDF
FIN1028MX
Виробник: onsemi
Description: IC TRANSCEIVER 0/2 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/2
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 8-SOIC
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+34.55 грн
5000+30.87 грн
7500+30.44 грн
Мінімальне замовлення: 2500
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KA5M0280RTU KA5x02xx.pdf
KA5M0280RTU
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 8.8V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Obsolete
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HUF76633S3S HUF76633P3%2CS3S.pdf
HUF76633S3S
Виробник: onsemi
Description: MOSFET N-CH 100V 39A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
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FQP55N10 fqp55n10-d.pdf
FQP55N10
Виробник: onsemi
Description: MOSFET N-CH 100V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
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HCPL2601SDV ONSM-S-A0006115631-1.pdf?t.download=true&u=5oefqw
HCPL2601SDV
Виробник: onsemi
Description: OPTOISO 2.5KV OPN COLLECTOR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
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HCPL0701R1V hcpl0731-d.pdf
HCPL0701R1V
Виробник: onsemi
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
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HCPL0701R1 hcpl0731-d.pdf
HCPL0701R1
Виробник: onsemi
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
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HCPL0701R2 hcpl0731-d.pdf
HCPL0701R2
Виробник: onsemi
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
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HUFA75333P3 HUFA75333G3%2C%20P3%2C%20S3S.pdf
HUFA75333P3
Виробник: onsemi
Description: MOSFET N-CH 55V 66A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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HUFA76432S3S HUFA76432P3%3B%20HUFA76432S3S%28T%29.pdf
HUFA76432S3S
Виробник: onsemi
Description: MOSFET N-CH 60V 59A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 25 V
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FQPF12N60C FQP%2CFQPF12N60C.pdf
FQPF12N60C
Виробник: onsemi
Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
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MM74C04MX MM74C00,02,04.pdf
MM74C04MX
Виробник: onsemi
Description: IC INVERTER 6CH 6-INP 14SOIC
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MM74C04M MM74C00,02,04.pdf
MM74C04M
Виробник: onsemi
Description: IC INVERTER 6CH 6-INP 14SOIC
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FQA44N10 FQA44N10.pdf
FQA44N10
Виробник: onsemi
Description: MOSFET N-CH 100V 48A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 24A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
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HCPL0701 hcpl0731-d.pdf
HCPL0701
Виробник: onsemi
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
на замовлення 3422 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+198.95 грн
50+115.23 грн
100+107.48 грн
500+87.91 грн
1000+83.69 грн
2000+80.12 грн
Мінімальне замовлення: 2
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FJAF6810ATU
FJAF6810ATU
Виробник: onsemi
Description: TRANS NPN 750V 10A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.5A, 6A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 6A, 5V
Supplier Device Package: TO-3PF
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 60 W
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FJAF6810DYDTBTU FJAF6810D.PDF
FJAF6810DYDTBTU
Виробник: onsemi
Description: TRANS NPN 750V 10A TO-3PF
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KA5M0380RTU ka5h0380r-d.pdf
KA5M0380RTU
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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KA5L0380RTU ka5h0380r-d.pdf
KA5L0380RTU
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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KA5H0380RYDTU ka5h0380r-d.pdf
KA5H0380RYDTU
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
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KA5L0380RYDTU
KA5L0380RYDTU
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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FQPF7N60 fqpf7n60-d.pdf
FQPF7N60
Виробник: onsemi
Description: MOSFET N-CH 600V 4.3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.2A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+218.05 грн
Мінімальне замовлення: 2
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KA5M0380RYDTU ka5h0380r-d.pdf
KA5M0380RYDTU
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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KA5H0380RTU ka5h0380r-d.pdf
KA5H0380RTU
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
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FQP7N60 FQP7N60.pdf
FQP7N60
Виробник: onsemi
Description: MOSFET N-CH 600V 7.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.7A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
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FQAF11N40 FQAF11N40.pdf
FQAF11N40
Виробник: onsemi
Description: MOSFET N-CH 400V 8.8A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.4A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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FQP5N90 FQP5N90.pdf
FQP5N90
Виробник: onsemi
Description: MOSFET N-CH 900V 5.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
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FJAF6810AYDTBTU
FJAF6810AYDTBTU
Виробник: onsemi
Description: TRANS NPN 750V 10A TO3PF
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FQAF65N06 FQAF65N06.pdf
FQAF65N06
Виробник: onsemi
Description: MOSFET N-CH 60V 49A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 24.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
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FQB6N80TM fqb6n80-d.pdf
FQB6N80TM
Виробник: onsemi
Description: MOSFET N-CH 800V 5.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 2.9A, 10V
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
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FQPF47P06 fqpf47p06-d.pdf
FQPF47P06
Виробник: onsemi
Description: MOSFET P-CH 60V 30A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
на замовлення 430 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+311.96 грн
50+153.65 грн
100+139.46 грн
Мінімальне замовлення: 2
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FQPF27N25 fqpf27n25-d.pdf
FQPF27N25
Виробник: onsemi
Description: MOSFET N-CH 250V 14A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 7A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
на замовлення 206 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+243.52 грн
50+131.23 грн
100+127.62 грн
Мінімальне замовлення: 2
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HUFA75637P3 HUFA75637P3%2CHUFA75637S3S.pdf
HUFA75637P3
Виробник: onsemi
Description: MOSFET N-CH 100V 44A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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FQPF55N10 FQPF55N10.pdf
FQPF55N10
Виробник: onsemi
Description: MOSFET N-CH 100V 34.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.2A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 17.1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
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FIN1019MTC FIN1019.pdf
FIN1019MTC
Виробник: onsemi
Description: IC TRANSCEIVER FULL 1/1 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 14-TSSOP
Duplex: Full
Part Status: Obsolete
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FMS6400CS FMS6400.pdf
FMS6400CS
Виробник: onsemi
Description: IC VIDEO DRIVER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Standards: PAL
Supplier Device Package: 8-SOIC
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FQPF5N90 fqpf5n90-d.pdf
FQPF5N90
Виробник: onsemi
Description: MOSFET N-CH 900V 3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
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FIN1019MTCX FIN1019.pdf
FIN1019MTCX
Виробник: onsemi
Description: IC TRANSCEIVER FULL 1/1 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 14-TSSOP
Duplex: Full
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+66.19 грн
Мінімальне замовлення: 2500
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FMS6400CS1 FMS6400.pdf
FMS6400CS1
Виробник: onsemi
Description: IC VIDEO DRIVER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Standards: PAL
Supplier Device Package: 8-SOIC
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ISL9R8120S3ST ISL9R8120P2%2CISL9R8120S3S.pdf
ISL9R8120S3ST
Виробник: onsemi
Description: DIODE GEN PURP 1.2KV 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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HUFA76633S3S HUFA76633P3%2CS3S.pdf
HUFA76633S3S
Виробник: onsemi
Description: MOSFET N-CH 100V 39A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
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FFA20U60DNTU FFA20U60DN.pdf
FFA20U60DNTU
Виробник: onsemi
Description: DIODE ARRAY GP 600V 20A TO3P
товару немає в наявності
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