Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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N02L63W3AB25I | onsemi |
![]() Packaging: Tray Package / Case: 48-LFBGA Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-BGA (6x8) Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 128K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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N02L83W2AT25I | onsemi |
![]() Packaging: Tray Package / Case: 32-LFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP I Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 256K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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N04L63W1AT27I | onsemi |
![]() Packaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Part Status: Obsolete Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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N04L63W2AT27I | onsemi |
![]() Packaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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N08L63W2AB27I | onsemi |
![]() Packaging: Tray Package / Case: 48-LFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-BGA (6x8) Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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N25S818HAS21I | onsemi |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SRAM Clock Frequency: 16 MHz Memory Format: SRAM Supplier Device Package: 8-SOIC Part Status: Active Memory Interface: SPI Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
на замовлення 19686 шт: термін постачання 21-31 дні (днів) |
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N25S818HAT21I | onsemi |
![]() Packaging: Tube Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SRAM Clock Frequency: 16 MHz Memory Format: SRAM Supplier Device Package: 8-TSSOP Part Status: Active Memory Interface: SPI Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
на замовлення 8108 шт: термін постачання 21-31 дні (днів) |
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N25S830HAS22I | onsemi |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM Clock Frequency: 20 MHz Memory Format: SRAM Supplier Device Package: 8-SOIC Part Status: Active Memory Interface: SPI Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
на замовлення 6447 шт: термін постачання 21-31 дні (днів) |
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N25S830HAT22I | onsemi |
![]() Packaging: Tube Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM Clock Frequency: 20 MHz Memory Format: SRAM Supplier Device Package: 8-TSSOP Part Status: Active Memory Interface: SPI Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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N64S830HAS22I | onsemi |
![]() Packaging: Tray Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM Clock Frequency: 20 MHz Memory Format: SRAM Supplier Device Package: 8-SOIC Part Status: Active Memory Interface: SPI Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
на замовлення 10960 шт: термін постачання 21-31 дні (днів) |
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N64S830HAT22I | onsemi |
![]() Packaging: Tube Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM Clock Frequency: 20 MHz Memory Format: SRAM Supplier Device Package: 8-TSSOP Part Status: Last Time Buy Memory Interface: SPI Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
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AMIS30600LINI1RG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Protocol: LINbus Supplier Device Package: 8-SOIC Receiver Hysteresis: 80 mV Duplex: Half |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AMIS30624C6244RG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 570mA Interface: I²C Operating Temperature: -40°C ~ 165°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.5V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 6.5V ~ 29V Supplier Device Package: 20-SOIC Motor Type - Stepper: Bipolar Step Resolution: 1/2, 1/4, 1/8, 1/16 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AMIS30624C6245RG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-VQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 570mA Interface: I²C Operating Temperature: -40°C ~ 165°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.5V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 6.5V ~ 29V Supplier Device Package: 32-NQFP (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1/2, 1/4, 1/8, 1/16 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AMIS30660CANH2RG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Protocol: CANbus Supplier Device Package: 8-SOIC Receiver Hysteresis: 80 mV Duplex: Half |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AMIS41682CANM1RG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Protocol: CANbus Supplier Device Package: 14-SOIC Receiver Hysteresis: 70 mV Duplex: Half |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AMIS42665TJAA1RG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 1Mbps Protocol: CANbus Supplier Device Package: 8-SOIC Receiver Hysteresis: 70 mV Duplex: Half Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AMIS42673ICAG1RG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Protocol: CANbus Supplier Device Package: 8-SOIC Receiver Hysteresis: 70 mV Duplex: Half Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AMIS42675ICAA1RG | onsemi |
Description: IC TRANSCEIVER HALF 1/1 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Protocol: CANbus Supplier Device Package: 8-SOIC Receiver Hysteresis: 70 mV Duplex: Half Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AMIS42770ICAW1RG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 2/2 Protocol: CANbus Supplier Device Package: 20-SOIC Receiver Hysteresis: 70 mV Duplex: Half Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AMIS30600LINI1RG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Protocol: LINbus Supplier Device Package: 8-SOIC Receiver Hysteresis: 80 mV Duplex: Half |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AMIS30660CANH2RG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Protocol: CANbus Supplier Device Package: 8-SOIC Receiver Hysteresis: 80 mV Duplex: Half |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AMIS41682CANM1RG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Protocol: CANbus Supplier Device Package: 14-SOIC Receiver Hysteresis: 70 mV Duplex: Half |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AMIS42665TJAA1RG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 1Mbps Protocol: CANbus Supplier Device Package: 8-SOIC Receiver Hysteresis: 70 mV Duplex: Half Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AMIS42673ICAG1RG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Protocol: CANbus Supplier Device Package: 8-SOIC Receiver Hysteresis: 70 mV Duplex: Half Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AMIS42675ICAA1RG | onsemi |
Description: IC TRANSCEIVER HALF 1/1 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Protocol: CANbus Supplier Device Package: 8-SOIC Receiver Hysteresis: 70 mV Duplex: Half Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AMIS42770ICAW1RG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 2/2 Protocol: CANbus Supplier Device Package: 20-SOIC Receiver Hysteresis: 70 mV Duplex: Half Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FD6M016N03 | onsemi |
![]() Packaging: Tube Package / Case: EPM15 Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 15V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V Gate Charge (Qg) (Max) @ Vgs: 295nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: EPM15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDMC8651 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 4.5V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FGA180N33ATTU | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 40A Supplier Device Package: TO-3P IGBT Type: Trench Gate Charge: 169 nC Part Status: Obsolete Current - Collector (Ic) (Max): 180 A Voltage - Collector Emitter Breakdown (Max): 330 V Current - Collector Pulsed (Icm): 450 A Power - Max: 390 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FGA25N120FTD | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 770 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 48ns/210ns Switching Energy: 340µJ (on), 900µJ (off) Test Condition: 600V, 25A, 15Ohm, 15V Gate Charge: 160 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 313 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FGA90N33ATDTU | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 23 ns Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A Supplier Device Package: TO-3P IGBT Type: Trench Gate Charge: 95 nC Part Status: Obsolete Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 330 V Current - Collector Pulsed (Icm): 330 A Power - Max: 223 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FGA90N33ATTU | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A Supplier Device Package: TO-3P IGBT Type: Trench Gate Charge: 95 nC Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 330 V Current - Collector Pulsed (Icm): 330 A Power - Max: 223 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDMC8651 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 4.5V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 15 V |
на замовлення 3518 шт: термін постачання 21-31 дні (днів) |
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4N33SM | onsemi |
![]() Packaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 500% @ 10mA Vce Saturation (Max): 1V Supplier Device Package: 6-SMD Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 5µs, 100µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
на замовлення 2726 шт: термін постачання 21-31 дні (днів) |
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4N33SR2M | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Gull Wing Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 500% @ 10mA Vce Saturation (Max): 1V Supplier Device Package: 6-SMD Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 5µs, 100µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FAN5350UCX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-UFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 600mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 3MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 5-WLCSP (0.96x1.33) Synchronous Rectifier: Yes Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 1.82V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FAN73832MX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 15V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 50ns, 30ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 1.2V, 2.9V Current - Peak Output (Source, Sink): 350mA, 650mA Part Status: Last Time Buy DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDB33N25TM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V Power Dissipation (Max): 235W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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FDB5800 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6625 pF @ 15 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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FDB8444 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 70A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8035 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDB8860 | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDC658AP | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDD6635 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Power Dissipation (Max): 3.8W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 35 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDD6637 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 14A, 10V Power Dissipation (Max): 3.1W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 35 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDD8444 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V Power Dissipation (Max): 153W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V |
на замовлення 1675 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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FDD8444-F085 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V Power Dissipation (Max): 153W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDD8445 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDMA420NZ | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.7A, 4.5V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 10 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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FDMA430NZ | onsemi |
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на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDMB3800N | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 750mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP, MicroFET (3x1.9) Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMS9600S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 16A Input Capacitance (Ciss) (Max) @ Vds: 1705pF @ 15V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (5x6), Power56 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDP100N10 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V |
на замовлення 308 шт: термін постачання 21-31 дні (днів) |
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FDP20N50 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDP20N50F | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V |
на замовлення 890 шт: термін постачання 21-31 дні (днів) |
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FDP51N25 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V |
на замовлення 573 шт: термін постачання 21-31 дні (днів) |
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FDP55N06 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 27.5A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDPF20N50FT | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V Power Dissipation (Max): 38.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDPF44N25T | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V |
на замовлення 656 шт: термін постачання 21-31 дні (днів) |
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FDS4897C | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. |
N02L63W3AB25I |
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Виробник: onsemi
Description: IC SRAM 2MBIT PARALLEL 48BGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-BGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 2MBIT PARALLEL 48BGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-BGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
N02L83W2AT25I |
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Виробник: onsemi
Description: IC SRAM 2MBIT PARALLEL 32TSOP I
Packaging: Tray
Package / Case: 32-LFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 2MBIT PARALLEL 32TSOP I
Packaging: Tray
Package / Case: 32-LFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
N04L63W1AT27I |
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Виробник: onsemi
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Obsolete
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Obsolete
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
N04L63W2AT27I |
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Виробник: onsemi
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
N08L63W2AB27I |
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Виробник: onsemi
Description: IC SRAM 4MBIT PARALLEL 48BGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-BGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 48BGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-BGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
N25S818HAS21I |
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Виробник: onsemi
Description: IC SRAM 256KBIT SPI 16MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SRAM
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 256KBIT SPI 16MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SRAM
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 19686 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 180.65 грн |
10+ | 158.71 грн |
25+ | 154.43 грн |
50+ | 144.19 грн |
100+ | 128.89 грн |
250+ | 128.52 грн |
500+ | 124.50 грн |
1000+ | 119.22 грн |
5000+ | 110.99 грн |
N25S818HAT21I |
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Виробник: onsemi
Description: IC SRAM 256KBIT SPI 16MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SRAM
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Part Status: Active
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 256KBIT SPI 16MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SRAM
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Part Status: Active
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 8108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 159.96 грн |
10+ | 136.64 грн |
25+ | 130.34 грн |
50+ | 118.03 грн |
100+ | 113.87 грн |
250+ | 108.60 грн |
500+ | 103.05 грн |
1000+ | 99.41 грн |
5000+ | 91.42 грн |
N25S830HAS22I |
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Виробник: onsemi
Description: IC SRAM 256KBIT SPI 20MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Clock Frequency: 20 MHz
Memory Format: SRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 256KBIT SPI 20MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Clock Frequency: 20 MHz
Memory Format: SRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 6447 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 163.14 грн |
10+ | 141.31 грн |
25+ | 139.14 грн |
50+ | 130.26 грн |
100+ | 116.38 грн |
300+ | 112.56 грн |
500+ | 110.31 грн |
1000+ | 102.72 грн |
5000+ | 92.98 грн |
N25S830HAT22I |
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Виробник: onsemi
Description: IC SRAM 256KBIT SPI 20MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Clock Frequency: 20 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Part Status: Active
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 256KBIT SPI 20MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Clock Frequency: 20 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Part Status: Active
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 161.55 грн |
10+ | 139.93 грн |
25+ | 137.79 грн |
50+ | 128.98 грн |
100+ | 115.25 грн |
300+ | 111.46 грн |
500+ | 109.23 грн |
1000+ | 101.72 грн |
N64S830HAS22I |
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Виробник: onsemi
Description: IC SRAM 64KBIT SPI 20MHZ 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Clock Frequency: 20 MHz
Memory Format: SRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 64KBIT SPI 20MHZ 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Clock Frequency: 20 MHz
Memory Format: SRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 10960 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 105.05 грн |
10+ | 89.43 грн |
25+ | 85.37 грн |
40+ | 78.19 грн |
80+ | 75.43 грн |
230+ | 75.37 грн |
N64S830HAT22I |
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Виробник: onsemi
Description: IC SRAM 64KBIT SPI 20MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Clock Frequency: 20 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Part Status: Last Time Buy
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 64KBIT SPI 20MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Clock Frequency: 20 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Part Status: Last Time Buy
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 45 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 114.60 грн |
10+ | 101.31 грн |
25+ | 98.52 грн |
AMIS30600LINI1RG |
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Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 80 mV
Duplex: Half
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 80 mV
Duplex: Half
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од. на суму грн.
AMIS30624C6244RG |
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Виробник: onsemi
Description: IC MTRDRV BIPLR 4.75-5.5V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 570mA
Interface: I²C
Operating Temperature: -40°C ~ 165°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6.5V ~ 29V
Supplier Device Package: 20-SOIC
Motor Type - Stepper: Bipolar
Step Resolution: 1/2, 1/4, 1/8, 1/16
Part Status: Obsolete
Description: IC MTRDRV BIPLR 4.75-5.5V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 570mA
Interface: I²C
Operating Temperature: -40°C ~ 165°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6.5V ~ 29V
Supplier Device Package: 20-SOIC
Motor Type - Stepper: Bipolar
Step Resolution: 1/2, 1/4, 1/8, 1/16
Part Status: Obsolete
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AMIS30624C6245RG |
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Виробник: onsemi
Description: IC MTR DRV BIPLR 4.75-5.5V 32QFP
Packaging: Tape & Reel (TR)
Package / Case: 32-VQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 570mA
Interface: I²C
Operating Temperature: -40°C ~ 165°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6.5V ~ 29V
Supplier Device Package: 32-NQFP (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1/2, 1/4, 1/8, 1/16
Part Status: Obsolete
Description: IC MTR DRV BIPLR 4.75-5.5V 32QFP
Packaging: Tape & Reel (TR)
Package / Case: 32-VQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 570mA
Interface: I²C
Operating Temperature: -40°C ~ 165°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6.5V ~ 29V
Supplier Device Package: 32-NQFP (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1/2, 1/4, 1/8, 1/16
Part Status: Obsolete
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AMIS30660CANH2RG |
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Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 80 mV
Duplex: Half
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 80 mV
Duplex: Half
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од. на суму грн.
AMIS41682CANM1RG |
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Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 14-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 14-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
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од. на суму грн.
AMIS42665TJAA1RG |
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Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Obsolete
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Obsolete
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од. на суму грн.
AMIS42673ICAG1RG |
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Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Obsolete
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Obsolete
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од. на суму грн.
AMIS42675ICAA1RG |
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Obsolete
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Obsolete
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од. на суму грн.
AMIS42770ICAW1RG |
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Виробник: onsemi
Description: IC TRANSCEIVER HALF 2/2 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 2/2
Protocol: CANbus
Supplier Device Package: 20-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Obsolete
Description: IC TRANSCEIVER HALF 2/2 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 2/2
Protocol: CANbus
Supplier Device Package: 20-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Obsolete
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AMIS30600LINI1RG |
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Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 80 mV
Duplex: Half
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 80 mV
Duplex: Half
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AMIS30660CANH2RG |
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Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 80 mV
Duplex: Half
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 80 mV
Duplex: Half
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AMIS41682CANM1RG |
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Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 14-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 14-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
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AMIS42665TJAA1RG |
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Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Obsolete
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Obsolete
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AMIS42673ICAG1RG |
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Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Obsolete
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Obsolete
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AMIS42675ICAA1RG |
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Obsolete
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Obsolete
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AMIS42770ICAW1RG |
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Виробник: onsemi
Description: IC TRANSCEIVER HALF 2/2 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 2/2
Protocol: CANbus
Supplier Device Package: 20-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Obsolete
Description: IC TRANSCEIVER HALF 2/2 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 2/2
Protocol: CANbus
Supplier Device Package: 20-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Obsolete
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FD6M016N03 |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 80A EPM15
Packaging: Tube
Package / Case: EPM15
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A
Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 15V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 295nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: EPM15
Description: MOSFET 2N-CH 30V 80A EPM15
Packaging: Tube
Package / Case: EPM15
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A
Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 15V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 295nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: EPM15
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FDMC8651 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 15A/20A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 15 V
Description: MOSFET N-CH 30V 15A/20A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 43.05 грн |
FGA180N33ATTU |
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Виробник: onsemi
Description: IGBT TRENCH 330V 180A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench
Gate Charge: 169 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 180 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector Pulsed (Icm): 450 A
Power - Max: 390 W
Description: IGBT TRENCH 330V 180A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench
Gate Charge: 169 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 180 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector Pulsed (Icm): 450 A
Power - Max: 390 W
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FGA25N120FTD |
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Виробник: onsemi
Description: IGBT TRENCH FS 1200V 50A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 770 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/210ns
Switching Energy: 340µJ (on), 900µJ (off)
Test Condition: 600V, 25A, 15Ohm, 15V
Gate Charge: 160 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 313 W
Description: IGBT TRENCH FS 1200V 50A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 770 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/210ns
Switching Energy: 340µJ (on), 900µJ (off)
Test Condition: 600V, 25A, 15Ohm, 15V
Gate Charge: 160 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 313 W
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FGA90N33ATDTU |
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Виробник: onsemi
Description: IGBT TRENCH 330V 90A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A
Supplier Device Package: TO-3P
IGBT Type: Trench
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector Pulsed (Icm): 330 A
Power - Max: 223 W
Description: IGBT TRENCH 330V 90A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A
Supplier Device Package: TO-3P
IGBT Type: Trench
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector Pulsed (Icm): 330 A
Power - Max: 223 W
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FGA90N33ATTU |
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Виробник: onsemi
Description: IGBT 330V 90A 223W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A
Supplier Device Package: TO-3P
IGBT Type: Trench
Gate Charge: 95 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector Pulsed (Icm): 330 A
Power - Max: 223 W
Description: IGBT 330V 90A 223W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A
Supplier Device Package: TO-3P
IGBT Type: Trench
Gate Charge: 95 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector Pulsed (Icm): 330 A
Power - Max: 223 W
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FDMC8651 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 15A/20A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 15 V
Description: MOSFET N-CH 30V 15A/20A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 15 V
на замовлення 3518 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 154.39 грн |
10+ | 94.80 грн |
100+ | 64.14 грн |
500+ | 47.89 грн |
1000+ | 43.93 грн |
4N33SM |
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Виробник: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOISO 4.17KV DARL W/BASE 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
на замовлення 2726 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 73.21 грн |
50+ | 32.35 грн |
100+ | 29.10 грн |
500+ | 22.16 грн |
1000+ | 20.59 грн |
2000+ | 19.29 грн |
4N33SR2M |
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Виробник: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6-SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOISO 4.17KV DARL W/BASE 6-SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 24.97 грн |
2000+ | 22.66 грн |
3000+ | 21.95 грн |
5000+ | 19.85 грн |
FAN5350UCX |
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Виробник: onsemi
Description: IC REG BUCK 1.82V 600MA 5WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 5-WLCSP (0.96x1.33)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 1.82V
Description: IC REG BUCK 1.82V 600MA 5WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 5-WLCSP (0.96x1.33)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 1.82V
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FAN73832MX |
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Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 15V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.9V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 15V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.9V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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FDB33N25TM |
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Виробник: onsemi
Description: MOSFET N-CH 250V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
Description: MOSFET N-CH 250V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 70.38 грн |
1600+ | 66.50 грн |
2400+ | 65.80 грн |
FDB5800 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 14A/80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6625 pF @ 15 V
Description: MOSFET N-CH 60V 14A/80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6625 pF @ 15 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 101.83 грн |
1600+ | 96.56 грн |
FDB8444 |
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Виробник: onsemi
Description: MOSFET N-CH 40V 70A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 70A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8035 pF @ 25 V
Description: MOSFET N-CH 40V 70A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 70A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8035 pF @ 25 V
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FDB8860 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 80A TO263AB
Description: MOSFET N-CH 30V 80A TO263AB
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FDC658AP |
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Виробник: onsemi
Description: MOSFET P-CH 30V 4A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 15 V
Description: MOSFET P-CH 30V 4A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 15 V
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FDD6635 |
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Виробник: onsemi
Description: MOSFET N-CH 35V 15A/59A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
Description: MOSFET N-CH 35V 15A/59A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
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FDD6637 |
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Виробник: onsemi
Description: MOSFET P-CH 35V 13A/55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 20 V
Description: MOSFET P-CH 35V 13A/55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 20 V
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FDD8444 |
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Виробник: onsemi
Description: MOSFET N-CH 40V 145A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
Description: MOSFET N-CH 40V 145A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
на замовлення 1675 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
FDD8444-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 40V 145A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 145A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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FDD8445 |
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Виробник: onsemi
Description: MOSFET N-CH 40V 70A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Description: MOSFET N-CH 40V 70A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
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FDMA420NZ |
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Виробник: onsemi
Description: MOSFET N-CH 20V 5.7A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.7A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 10 V
Description: MOSFET N-CH 20V 5.7A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.7A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 21.36 грн |
6000+ | 19.02 грн |
9000+ | 18.63 грн |
FDMA430NZ |
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Виробник: onsemi
Description: MOSFET N-CH 30V 5A 6MICROFET
Description: MOSFET N-CH 30V 5A 6MICROFET
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 29.46 грн |
6000+ | 26.41 грн |
FDMB3800N |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 8MLP MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 750mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP, MicroFET (3x1.9)
Part Status: Active
Description: MOSFET 2N-CH 30V 8MLP MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 750mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP, MicroFET (3x1.9)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 37.70 грн |
FDMS9600S |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 12A 8MLP PWR56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 1705pF @ 15V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
Description: MOSFET 2N-CH 30V 12A 8MLP PWR56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 1705pF @ 15V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
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FDP100N10 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Description: MOSFET N-CH 100V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
на замовлення 308 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 338.22 грн |
50+ | 168.00 грн |
100+ | 152.73 грн |
FDP20N50 |
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Виробник: onsemi
Description: MOSFET N-CH 500V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
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FDP20N50F |
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Виробник: onsemi
Description: MOSFET N-CH 500V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
на замовлення 890 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 257.84 грн |
50+ | 112.02 грн |
100+ | 108.58 грн |
500+ | 95.38 грн |
FDP51N25 |
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Виробник: onsemi
Description: MOSFET N-CH 250V 51A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V
Description: MOSFET N-CH 250V 51A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V
на замовлення 573 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 216.46 грн |
50+ | 100.60 грн |
100+ | 95.39 грн |
500+ | 84.50 грн |
FDP55N06 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 27.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Description: MOSFET N-CH 60V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 27.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
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FDPF20N50FT |
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Виробник: onsemi
Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
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FDPF44N25T |
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Виробник: onsemi
Description: MOSFET N-CH 250V 44A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
Description: MOSFET N-CH 250V 44A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
на замовлення 656 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 173.49 грн |
50+ | 100.34 грн |
100+ | 94.15 грн |
500+ | 76.50 грн |
FDS4897C |
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Виробник: onsemi
Description: MOSFET N/P-CH 40V 6.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 40V 6.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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од. на суму грн.