Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FDA20N50-F109 | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDA59N25 | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 29.5A, 10V Power Dissipation (Max): 392W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V |
на замовлення 694 шт: термін постачання 21-31 дні (днів) |
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FDA59N30 | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 29.5A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V |
на замовлення 573 шт: термін постачання 21-31 дні (днів) |
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FDA8440 | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24740 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDB12N50FTM-WS | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDB12N50UTM_WS | onsemi |
Description: MOSFET N-CH 500V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 5A, 10V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDB8441-F085 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDB8444TS | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 70A, 10V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-5 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 338 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDC2512_F095 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 425mOhm @ 1.4A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SuperSOT™-6 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDC2612_F095 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDC3512_F095 | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDC5612_F095 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SuperSOT™-6 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
FDC6000NZ_F077 | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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FDC633N_F095 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.2A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDC640P_F095 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDC645N_F095 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 6.2A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
FDC699P_F077 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 FLMP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
FDC796N_F077 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 FLMP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1444 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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FDD16AN08A0_NF054 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1874 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDD3682-F085 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDD5810-F085 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDD5N50FTF_WS | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 1.75A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDD5N50TF_WS | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDD5N50TM-WS | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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В кошику од. на суму грн. | ||||||||||||
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FDD5N50UTF_WS | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDD5N50UTM-WS | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDD6680A | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 10V Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDD7030BL | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 10V Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDD8445-F085 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDP5680 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDP8870-F085 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 156A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V |
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В кошику од. на суму грн. | ||||||||||||
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FDPF15N65YDTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 7.5A, 10V Power Dissipation (Max): 38.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3095 pF @ 25 V |
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В кошику од. на суму грн. | ||||||||||||
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FDPF3860T | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 38.2mOhm @ 5.9A, 10V Power Dissipation (Max): 33.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
на замовлення 1113 шт: термін постачання 21-31 дні (днів) |
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FDPF55N06 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 27.5A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V |
на замовлення 3643 шт: термін постачання 21-31 дні (днів) |
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FDS3680 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 5.2A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V |
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В кошику од. на суму грн. | ||||||||||||
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FDS4895C | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.5A, 4.4A Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 20V Rds On (Max) @ Id, Vgs: 39mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: 8-SOIC |
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В кошику од. на суму грн. | ||||||||||||
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FDS6898A_NF40 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.4A Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 9.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDS6990AS | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SOIC Part Status: Obsolete |
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В кошику од. на суму грн. | ||||||||||||
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FDS7788 | onsemi |
![]() ![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3845 pF @ 15 V |
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В кошику од. на суму грн. | ||||||||||||
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FDS8978 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDS9412A | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDV303N_NB9U008 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 680mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDV304P_NB8U003 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 500mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FES16JT | onsemi |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 145pF @ 4V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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В кошику од. на суму грн. | ||||||||||||
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FFA40UP20DNTU | onsemi |
Description: DIODE ARRAY GP 200V 20A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-3P Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FFA60U60DNTU | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FGA15N120ANTDTU-F109 | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 330 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Supplier Device Package: TO-3P IGBT Type: NPT and Trench Td (on/off) @ 25°C: 15ns/160ns Switching Energy: 3mJ (on), 600µJ (off) Test Condition: 600V, 15A, 10Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 186 W |
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В кошику од. на суму грн. | ||||||||||||
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FGA25N120ANTDTU-F109 | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 350 ns Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A Supplier Device Package: TO-3P IGBT Type: NPT and Trench Td (on/off) @ 25°C: 50ns/190ns Switching Energy: 4.1mJ (on), 960µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 200 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 90 A Power - Max: 312 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FGA50N100BNTDTU | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.5 µs Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-3P IGBT Type: NPT and Trench Gate Charge: 275 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 100 A Power - Max: 156 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FHP3430IMTC14 | onsemi |
![]() Packaging: Tube Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Voltage Feedback Operating Temperature: -40°C ~ 85°C Current - Supply: 2.5mA (x4 Channels) Slew Rate: 110V/µs Gain Bandwidth Product: 60 MHz Current - Input Bias: 1.8 µA Voltage - Input Offset: 1 mV Supplier Device Package: 14-TSSOP Part Status: Obsolete Number of Circuits: 4 Current - Output / Channel: 100 mA -3db Bandwidth: 170 MHz Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 12 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FJE3303H2 | onsemi |
![]() Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 20 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FJP5554 | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FMS6141CS | onsemi |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Driver Voltage - Supply: 4.75V ~ 5.25V Applications: Consumer Video Supplier Device Package: 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FMS6143CSX-NS5C002 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Driver Voltage - Supply: 4.75V ~ 5.25V Applications: Consumer Video Standards: NTSC Supplier Device Package: 8-SOIC Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FOD0721R2 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Data Rate: 25Mbps Input Type: Logic Voltage - Isolation: 3750Vrms Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 5ns, 4.5ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 40ns, 40ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FOD3180T | onsemi |
![]() Packaging: Bulk Package / Case: 8-DIP (0.400", 10.16mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.43V Current - Peak Output: 2.5A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: cUL, UL Supplier Device Package: 8-MDIP Rise / Fall Time (Typ): 75ns, 55ns Common Mode Transient Immunity (Min): 15kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Pulse Width Distortion (Max): 65ns Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FOD3180V | onsemi |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.43V Current - Peak Output: 2.5A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: cUL, UL, VDE Supplier Device Package: 8-DIP Rise / Fall Time (Typ): 75ns, 55ns Common Mode Transient Immunity (Min): 15kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Pulse Width Distortion (Max): 65ns Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FOD3181S | onsemi |
![]() Packaging: Bulk Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -20°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 1.5A Technology: Optical Coupling Current - Output High, Low: 500mA, 500mA Voltage - Isolation: 5000Vrms Approval Agency: cUL, UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 75ns, 55ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FOD3181SD | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -20°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 1.5A Technology: Optical Coupling Current - Output High, Low: 500mA, 500mA Voltage - Isolation: 5000Vrms Approval Agency: cUL, UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 75ns, 55ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FOD3181SV | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. |
FDA20N50-F109 |
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Виробник: onsemi
Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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FDA59N25 |
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Виробник: onsemi
Description: MOSFET N-CH 250V 59A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 29.5A, 10V
Power Dissipation (Max): 392W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
Description: MOSFET N-CH 250V 59A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 29.5A, 10V
Power Dissipation (Max): 392W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
на замовлення 694 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 342.99 грн |
30+ | 183.61 грн |
120+ | 151.28 грн |
510+ | 119.71 грн |
FDA59N30 |
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Виробник: onsemi
Description: MOSFET N-CH 300V 59A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 29.5A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
Description: MOSFET N-CH 300V 59A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 29.5A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
на замовлення 573 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 372.44 грн |
30+ | 171.61 грн |
120+ | 150.69 грн |
510+ | 132.28 грн |
FDA8440 |
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Виробник: onsemi
Description: MOSFET N-CH 40V 30A/100A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24740 pF @ 25 V
Description: MOSFET N-CH 40V 30A/100A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24740 pF @ 25 V
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FDB12N50FTM-WS |
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Виробник: onsemi
Description: MOSFET N-CH 500V 11.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
Description: MOSFET N-CH 500V 11.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
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FDB12N50UTM_WS |
Виробник: onsemi
Description: MOSFET N-CH 500V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 5A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
Description: MOSFET N-CH 500V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 5A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
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FDB8441-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 40V 28A/80A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 28A/80A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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FDB8444TS |
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Виробник: onsemi
Description: MOSFET N-CH 40V 20A/70A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 70A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-5
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 338 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 25 V
Description: MOSFET N-CH 40V 20A/70A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 70A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-5
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 338 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 25 V
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FDC2512_F095 |
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Виробник: onsemi
Description: MOSFET N-CH 150V 1.4A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 425mOhm @ 1.4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 75 V
Description: MOSFET N-CH 150V 1.4A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 425mOhm @ 1.4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 75 V
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FDC2612_F095 |
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Виробник: onsemi
Description: MOSFET N-CH 200V 1.1A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V
Description: MOSFET N-CH 200V 1.1A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V
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FDC3512_F095 |
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Виробник: onsemi
Description: MOSFET N-CH 80V 3A SUPERSOT6
Description: MOSFET N-CH 80V 3A SUPERSOT6
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FDC5612_F095 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 4.3A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Description: MOSFET N-CH 60V 4.3A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
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FDC6000NZ_F077 |
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Виробник: onsemi
Description: MOSFET 2N-CH 20V 7.3A 6-SSOP
Description: MOSFET 2N-CH 20V 7.3A 6-SSOP
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FDC633N_F095 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 5.2A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 10 V
Description: MOSFET N-CH 30V 5.2A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 10 V
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FDC640P_F095 |
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Виробник: onsemi
Description: MOSFET P-CH 20V 4.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Description: MOSFET P-CH 20V 4.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
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FDC645N_F095 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 5.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
Description: MOSFET N-CH 30V 5.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
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FDC699P_F077 |
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Виробник: onsemi
Description: MOSFET P-CH 20V 7A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6 FLMP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 10 V
Description: MOSFET P-CH 20V 7A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6 FLMP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 10 V
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FDC796N_F077 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 12.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6 FLMP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1444 pF @ 15 V
Description: MOSFET N-CH 30V 12.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6 FLMP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1444 pF @ 15 V
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FDD16AN08A0_NF054 |
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Виробник: onsemi
Description: MOSFET N-CH 75V 9A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1874 pF @ 25 V
Description: MOSFET N-CH 75V 9A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1874 pF @ 25 V
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FDD3682-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 5.5/32A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 5.5/32A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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FDD5810-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 7.4A/37A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 7.4A/37A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Qualification: AEC-Q101
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FDD5N50FTF_WS |
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Виробник: onsemi
Description: MOSFET N-CH 500V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 1.75A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Description: MOSFET N-CH 500V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 1.75A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
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FDD5N50TF_WS |
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Виробник: onsemi
Description: MOSFET N-CH 500V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Description: MOSFET N-CH 500V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
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FDD5N50TM-WS |
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Виробник: onsemi
Description: MOSFET N-CH 500V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 500V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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FDD5N50UTF_WS |
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Виробник: onsemi
Description: MOSFET N-CH 500V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Description: MOSFET N-CH 500V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
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FDD5N50UTM-WS |
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Виробник: onsemi
Description: MOSFET N-CH 500V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Description: MOSFET N-CH 500V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
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FDD6680A |
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Виробник: onsemi
Description: MOSFET N-CH 30V 14A/56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 15 V
Description: MOSFET N-CH 30V 14A/56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 15 V
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FDD7030BL |
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Виробник: onsemi
Description: MOSFET N-CH 30V 14A/56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 15 V
Description: MOSFET N-CH 30V 14A/56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 15 V
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FDD8445-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 40V 70A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 70A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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FDP5680 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Description: MOSFET N-CH 60V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
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FDP8870-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 19A/156A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Description: MOSFET N-CH 30V 19A/156A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
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FDPF15N65YDTU |
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Виробник: onsemi
Description: MOSFET N-CH 650V 15A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3095 pF @ 25 V
Description: MOSFET N-CH 650V 15A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3095 pF @ 25 V
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FDPF3860T |
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Виробник: onsemi
Description: MOSFET N-CH 100V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 38.2mOhm @ 5.9A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 38.2mOhm @ 5.9A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 1113 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 119.37 грн |
50+ | 66.82 грн |
100+ | 59.82 грн |
500+ | 47.97 грн |
1000+ | 40.90 грн |
FDPF55N06 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 55A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 27.5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Description: MOSFET N-CH 60V 55A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 27.5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
на замовлення 3643 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 173.49 грн |
50+ | 87.81 грн |
100+ | 78.97 грн |
500+ | 59.57 грн |
1000+ | 53.51 грн |
2000+ | 50.96 грн |
FDS3680 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 5.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 5.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
Description: MOSFET N-CH 100V 5.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 5.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
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FDS4895C |
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Виробник: onsemi
Description: MOSFET N/P-CH 40V 5.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 4.4A
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 20V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 40V 5.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 4.4A
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 20V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SOIC
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FDS6898A_NF40 |
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Виробник: onsemi
Description: MOSFET 2N-CH 20V 9.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.4A
Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 20V 9.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.4A
Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
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FDS6990AS |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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FDS7788 | ![]() |
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Виробник: onsemi
Description: MOSFET N-CH 30V 18A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3845 pF @ 15 V
Description: MOSFET N-CH 30V 18A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3845 pF @ 15 V
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FDS8978 |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
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FDS9412A |
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Виробник: onsemi
Description: MOSFET N-CH 30V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 15 V
Description: MOSFET N-CH 30V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 15 V
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FDV303N_NB9U008 |
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Виробник: onsemi
Description: MOSFET N-CH 25V 680MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Description: MOSFET N-CH 25V 680MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
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FDV304P_NB8U003 |
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Виробник: onsemi
Description: MOSFET P-CH 25V 460MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 500mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 10 V
Description: MOSFET P-CH 25V 460MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 500mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 10 V
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FES16JT |
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Виробник: onsemi
Description: DIODE GEN PURP 600V 16A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 16A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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FFA40UP20DNTU |
Виробник: onsemi
Description: DIODE ARRAY GP 200V 20A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE ARRAY GP 200V 20A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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FFA60U60DNTU |
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Виробник: onsemi
Description: DIODE ARRAY GP 600V 60A TO3P
Description: DIODE ARRAY GP 600V 60A TO3P
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FGA15N120ANTDTU-F109 |
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Виробник: onsemi
Description: IGBT NPT/TRENCH 1200V 30A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 330 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 3mJ (on), 600µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 186 W
Description: IGBT NPT/TRENCH 1200V 30A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 330 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 3mJ (on), 600µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 186 W
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FGA25N120ANTDTU-F109 |
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Виробник: onsemi
Description: IGBT NPT/TRENCH 1200V 50A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 50ns/190ns
Switching Energy: 4.1mJ (on), 960µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 312 W
Description: IGBT NPT/TRENCH 1200V 50A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 50ns/190ns
Switching Energy: 4.1mJ (on), 960µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 312 W
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FGA50N100BNTDTU |
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Виробник: onsemi
Description: IGBT 1000V 50A 156W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Gate Charge: 275 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 156 W
Description: IGBT 1000V 50A 156W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Gate Charge: 275 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 156 W
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FHP3430IMTC14 |
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Виробник: onsemi
Description: IC OPAMP VFB 4 CIRCUIT 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.5mA (x4 Channels)
Slew Rate: 110V/µs
Gain Bandwidth Product: 60 MHz
Current - Input Bias: 1.8 µA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP
Part Status: Obsolete
Number of Circuits: 4
Current - Output / Channel: 100 mA
-3db Bandwidth: 170 MHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Description: IC OPAMP VFB 4 CIRCUIT 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.5mA (x4 Channels)
Slew Rate: 110V/µs
Gain Bandwidth Product: 60 MHz
Current - Input Bias: 1.8 µA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP
Part Status: Obsolete
Number of Circuits: 4
Current - Output / Channel: 100 mA
-3db Bandwidth: 170 MHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
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FJE3303H2 |
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Виробник: onsemi
Description: TRANS NPN 400V 1.5A TO126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 20 W
Description: TRANS NPN 400V 1.5A TO126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 20 W
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FJP5554 |
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Виробник: onsemi
Description: TRANS NPN 400V 4A TO220-3
Description: TRANS NPN 400V 4A TO220-3
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FMS6141CS |
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Виробник: onsemi
Description: IC VIDEO FILTER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Supplier Device Package: 8-SOIC
Description: IC VIDEO FILTER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Supplier Device Package: 8-SOIC
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FMS6143CSX-NS5C002 |
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Виробник: onsemi
Description: IC VIDEO FILTER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Standards: NTSC
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: IC VIDEO FILTER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Standards: NTSC
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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FOD0721R2 |
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Виробник: onsemi
Description: OPTOISO 3.75KV PUSH PULL 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Data Rate: 25Mbps
Input Type: Logic
Voltage - Isolation: 3750Vrms
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 5ns, 4.5ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: OPTOISO 3.75KV PUSH PULL 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Data Rate: 25Mbps
Input Type: Logic
Voltage - Isolation: 3750Vrms
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 5ns, 4.5ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
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FOD3180T |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8MDIP
Packaging: Bulk
Package / Case: 8-DIP (0.400", 10.16mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL
Supplier Device Package: 8-MDIP
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 65ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
Description: OPTOISO 5KV 1CH GATE DVR 8MDIP
Packaging: Bulk
Package / Case: 8-DIP (0.400", 10.16mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL
Supplier Device Package: 8-MDIP
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 65ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
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FOD3180V |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 65ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
Description: OPTOISO 5KV 1CH GATE DVR 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 65ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
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FOD3181S |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 1.5A
Technology: Optical Coupling
Current - Output High, Low: 500mA, 500mA
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 1.5A
Technology: Optical Coupling
Current - Output High, Low: 500mA, 500mA
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
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FOD3181SD |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 1.5A
Technology: Optical Coupling
Current - Output High, Low: 500mA, 500mA
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 1.5A
Technology: Optical Coupling
Current - Output High, Low: 500mA, 500mA
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
товару немає в наявності
В кошику
од. на суму грн.