| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CNY174SM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SMDCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-SMD Current Transfer Ratio (Max): 320% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 160% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor with Base Package / Case: 6-SMD, Gull Wing Packaging: Tube |
на замовлення 1539 шт: термін постачання 21-31 дні (днів) |
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CNY174SR2M | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SMDPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 160% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 320% @ 10mA Supplier Device Package: 6-SMD Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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CNY174SR2VM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SMDCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-SMD Current Transfer Ratio (Max): 320% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 160% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor with Base Package / Case: 6-SMD, Gull Wing Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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CNY174SVM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SMDCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-SMD Current Transfer Ratio (Max): 320% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 160% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor with Base Package / Case: 6-SMD, Gull Wing Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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CNY174TM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6DIPPart Status: Obsolete Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-DIP Current Transfer Ratio (Max): 320% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 160% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 100°C Mounting Type: Through Hole Output Type: Transistor with Base Package / Case: 6-DIP (0.400", 10.16mm) Packaging: Bulk Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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CNY17F1SR2VM | onsemi |
Description: OPTOISO 4.17KV TRANS 6SMDCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-SMD Current Transfer Ratio (Max): 80% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 40% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SMD, Gull Wing Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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CNY17F1SVM | onsemi |
Description: OPTOISO 4.17KV TRANS 6SMDCurrent Transfer Ratio (Min): 40% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SMD, Gull Wing Packaging: Bulk Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-SMD Current Transfer Ratio (Max): 80% @ 10mA Vce Saturation (Max): 400mV |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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CNY17F1TM | onsemi |
Description: OPTOISO 4.17KV TRANS 6DIPRise / Fall Time (Typ): 4µs, 3.5µs (Max) Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-DIP Current Transfer Ratio (Max): 80% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 40% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 100°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 6-DIP (0.400", 10.16mm) Packaging: Bulk Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CNY17F2SM | onsemi |
Description: OPTOISO 4.17KV 1CH TRANS 6-SMDPackaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 63% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 125% @ 10mA Supplier Device Package: 6-SMD Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 1826 шт: термін постачання 21-31 дні (днів) |
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CNY17F2SR2M_F132 | onsemi |
Description: OPTOISO 4.17KV 1CH TRANS 6-SMDCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Obsolete Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-SMD Current Transfer Ratio (Max): 125% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 63% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SMD, Gull Wing Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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CNY17F2SR2VM | onsemi |
Description: OPTOISO 4.17KV 1CH TRANS 6-SMDCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-SMD Current Transfer Ratio (Max): 125% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 63% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SMD, Gull Wing Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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CNY17F2TM | onsemi |
Description: OPTOISO 4.17KV 1CH TRANS 6-DIPMounting Type: Through Hole Output Type: Transistor Package / Case: 6-DIP (0.400", 10.16mm) Packaging: Bulk Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Obsolete Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-DIP Current Transfer Ratio (Max): 125% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 63% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 100°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CNY17F2TM_F132 | onsemi |
Description: OPTOISO 4.17KV 1CH TRANS 6-DIPCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Obsolete Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-DIP Current Transfer Ratio (Max): 125% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 63% @ 10mA Voltage - Isolation: 4170Vrms Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 100°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 6-DIP (0.400", 10.16mm) Packaging: Bulk Current - Output / Channel: 50mA Input Type: DC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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CNY17F2TVM | onsemi |
Description: OPTOISO 4.17KV 1CH TRANS 6-DIPPackaging: Tube Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 63% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 125% @ 10mA Supplier Device Package: 6-DIP Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 908 шт: термін постачання 21-31 дні (днів) |
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CNY17F2VM | onsemi |
Description: OPTOISO 4.17KV 1CH TRANS 6-DIPCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-DIP Current Transfer Ratio (Max): 125% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 63% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 100°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 6-DIP (0.300", 7.62mm) Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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CNY17F3SM | onsemi |
Description: OPTOISO 4.17KV 1CH TRANS 6-SMDCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-SMD Current Transfer Ratio (Max): 200% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SMD, Gull Wing Packaging: Tube |
на замовлення 4465 шт: термін постачання 21-31 дні (днів) |
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CNY17F3SR2M | onsemi |
Description: OPTOISO 4.17KV 1CH TRANS 6-SMDInput Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SMD, Gull Wing Packaging: Tape & Reel (TR) Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-SMD Current Transfer Ratio (Max): 200% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 50mA |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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CNY17F3SR2M_F132 | onsemi |
Description: OPTOISO 4.17KV 1CH TRANS 6-SMDCurrent Transfer Ratio (Min): 100% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SMD, Gull Wing Packaging: Tape & Reel (TR) Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Obsolete Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-SMD Current Transfer Ratio (Max): 200% @ 10mA Vce Saturation (Max): 400mV |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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CNY17F3SR2VM | onsemi |
Description: OPTOISO 4.17KV 1CH TRANS 6-SMDPackaging: Tape & Reel (TR) Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-SMD Current Transfer Ratio (Max): 200% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SMD, Gull Wing |
на замовлення 56000 шт: термін постачання 21-31 дні (днів) |
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CNY17F3SR2VM_F132 | onsemi |
Description: OPTOISO 4.17KV 1CH TRANS 6-SMDOutput Type: Transistor Package / Case: 6-SMD, Gull Wing Packaging: Tape & Reel (TR) Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Obsolete Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-SMD Current Transfer Ratio (Max): 200% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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CNY17F3SVM | onsemi |
Description: OPTOISO 4.17KV 1CH TRANS 6-SMDCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Obsolete Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-SMD Current Transfer Ratio (Max): 200% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SMD, Gull Wing Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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CNY17F3TVM | onsemi |
Description: OPTOISO 4.17KV 1CH TRANS 6-DIPVce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 100°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 6-DIP (0.400", 10.16mm) Packaging: Tube Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-DIP Current Transfer Ratio (Max): 200% @ 10mA |
на замовлення 24576 шт: термін постачання 21-31 дні (днів) |
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CNY17F4SR2VM_F132 | onsemi |
Description: OPTOISO 4.17KV 1CH TRANS 6-SMDPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 160% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 320% @ 10mA Supplier Device Package: 6-SMD Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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D44H10TU | onsemi |
Description: TRANS NPN 80V 8A TO220-3Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 8 A Supplier Device Package: TO-220-3 Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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FAN4800IM | onsemi |
Description: IC PFC CTLR CCM/DCM 84KHZ 16SOICPackaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 11V ~ 16.5V Frequency - Switching: 66kHz ~ 84kHz Mode: Continuous Conduction (CCM), Discontinuous Conduction (DCM) Supplier Device Package: 16-SOIC Part Status: Obsolete Current - Startup: 100 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN5240QSC | onsemi |
Description: IC REG CTRLR MULTIPH 1OUT 28QSOPPart Status: Obsolete Supplier Device Package: 28-QSOP Applications: Controller, AMD Mobile Athlon™, Duron™ Operating Temperature: -10°C ~ 85°C Voltage - Input: 6V ~ 24V Number of Outputs: 1 Mounting Type: Surface Mount Voltage - Output: 0.93V ~ 2V Package / Case: 28-SSOP (0.154", 3.90mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN7311BM | onsemi |
Description: IC LCD BKLT INVERTER DRV 20SOICPart Status: Obsolete Supplier Device Package: 20-SOIC Applications: LCD TV/Monitor Voltage - Supply: 5V ~ 25.5V Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN7311M | onsemi |
Description: IC LCD BKLT INVERTER DRV 20SOICPart Status: Obsolete Supplier Device Package: 20-SOIC Applications: LCD TV/Monitor Voltage - Supply: 5V ~ 25.5V Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN7382M1 | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 14SOPPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-SOP Rise / Fall Time (Typ): 60ns, 30ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 350mA, 650mA Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 4860 шт В кошику од. на суму грн. | ||||||||||||||||
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FAN7384M | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 14SOPDigiKey Programmable: Not Verified Part Status: Obsolete Current - Peak Output (Source, Sink): 250mA, 500mA Logic Voltage - VIL, VIH: 1.2V, 2.5V Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 50ns, 30ns Supplier Device Package: 14-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 13V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN7387M | onsemi |
Description: IC BALLAST CNTRL 22KHZ 8SOPCurrent - Supply: 800 µA Part Status: Obsolete Dimming: No Supplier Device Package: 8-SOIC Voltage - Supply: 11V ~ 14V Operating Temperature: -40°C ~ 125°C Type: Ballast Controller Frequency: 18kHz ~ 22kHz Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN7388M | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 20SOICPart Status: Obsolete Current - Peak Output (Source, Sink): 350mA, 650mA Logic Voltage - VIL, VIH: 1V, 2.5V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 6 Driven Configuration: Half-Bridge Channel Type: 3-Phase Rise / Fall Time (Typ): 50ns, 30ns Supplier Device Package: 20-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Packaging: Tube DigiKey Programmable: Not Verified |
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FAN7390M | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOICOperating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube DigiKey Programmable: Not Verified Part Status: Obsolete Current - Peak Output (Source, Sink): 4.5A, 4.5A Logic Voltage - VIL, VIH: 1.2V, 2.5V Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 25ns, 20ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 22V |
товару немає в наявності |
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FAN7390M1 | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 14SOPDigiKey Programmable: Not Verified Part Status: Obsolete Current - Peak Output (Source, Sink): 4.5A, 4.5A Logic Voltage - VIL, VIH: 1.2V, 2.5V Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 25ns, 20ns Supplier Device Package: 14-SOP High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 22V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tube |
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FAN7602BM | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C (TA) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 20V Supplier Device Package: 8-SOIC Fault Protection: Over Load, Over Voltage Voltage - Start Up: 12 V Part Status: Obsolete Power (Watts): 48 W |
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FAN7711M | onsemi |
Description: IC BALLAST CNTRL 57.3KHZ 8SOPCurrent - Supply: 3.2 mA Dimming: No Supplier Device Package: 8-SOIC Voltage - Supply: 12.4V ~ 15.2V Operating Temperature: -25°C ~ 125°C Type: Ballast Controller Frequency: 48.7kHz ~ 57.3kHz Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
товару немає в наявності |
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FAN7842M | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 60ns, 30ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.9V Current - Peak Output (Source, Sink): 350mA, 650mA Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 8100 шт В кошику од. на суму грн. | ||||||||||||||||
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FAN7888M | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 20SOICPackaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 20-SOIC Rise / Fall Time (Typ): 50ns, 30ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1V, 2.5V Current - Peak Output (Source, Sink): 350mA, 650mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCA16N60_F109 | onsemi |
Description: MOSFET N-CH 600V 16A TO3PNInput Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PN Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCA47N60-F109 | onsemi |
Description: MOSFET N-CH 600V 47A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V |
на замовлення 38 шт: термін постачання 21-31 дні (днів) |
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FCPF20N60TYDTU | onsemi |
Description: MOSFET N-CH 600V 20A TO220F-3Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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FD70N20PWD | onsemi |
Description: MOSFET N-CH 200V 70A TO3P Packaging: Tube Drain to Source Voltage (Vdss): 200 V Supplier Device Package: TO-3P Current - Continuous Drain (Id) @ 25°C: 70A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDA20N50-F109 | onsemi |
Description: MOSFET N-CH 500V 22A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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В кошику од. на суму грн. | ||||||||||||||||
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FDA59N25 | onsemi |
Description: MOSFET N-CH 250V 59A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 29.5A, 10V Power Dissipation (Max): 392W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V |
на замовлення 307 шт: термін постачання 21-31 дні (днів) |
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FDA59N30 | onsemi |
Description: MOSFET N-CH 300V 59A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 29.5A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V |
на замовлення 1328 шт: термін постачання 21-31 дні (днів) |
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FDA8440 | onsemi |
Description: MOSFET N-CH 40V 30A/100A TO3PNInput Capacitance (Ciss) (Max) @ Vds: 24740 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-3PN Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||||
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FDB12N50FTM-WS | onsemi |
Description: MOSFET N-CH 500V 11.5A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. | ||||||||||||||||
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FDB12N50UTM_WS | onsemi |
Description: MOSFET N-CH 500V 10A D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V |
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FDB8441-F085 | onsemi |
Description: MOSFET N-CH 40V 28A/80A TO263ABQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. | ||||||||||||||||
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FDB8444TS | onsemi |
Description: MOSFET N-CH 40V 20A/70A TO263-5Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 338 nC @ 20 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263-5 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 181W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. | ||||||||||||||||
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FDC2512_F095 | onsemi |
Description: MOSFET N-CH 150V 1.4A SUPERSOT6Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: SuperSOT™-6 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 425mOhm @ 1.4A, 10V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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FDC2612_F095 | onsemi |
Description: MOSFET N-CH 200V 1.1A SUPERSOT6Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: SuperSOT™-6 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. | ||||||||||||||||
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FDC3512_F095 | onsemi |
Description: MOSFET N-CH 80V 3A SUPERSOT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDC5612_F095 | onsemi |
Description: MOSFET N-CH 60V 4.3A SUPERSOT6Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: SuperSOT™-6 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
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| FDC6000NZ_F077 | onsemi |
Description: MOSFET 2N-CH 20V 7.3A 6SSOTSupplier Device Package: SuperSOT™-6 FLMP Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V Current - Continuous Drain (Id) @ 25°C: 7.3A Drain to Source Voltage (Vdss): 20V Power - Max: 1.2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. | |||||||||||||||||
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FDC633N_F095 | onsemi |
Description: MOSFET N-CH 30V 5.2A SUPERSOT6Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Obsolete Supplier Device Package: SuperSOT™-6 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. | ||||||||||||||||
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FDC640P_F095 | onsemi |
Description: MOSFET P-CH 20V 4.5A SUPERSOT6Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Obsolete Supplier Device Package: SuperSOT™-6 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. | ||||||||||||||||
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FDC645N_F095 | onsemi |
Description: MOSFET N-CH 30V 5.5A SUPERSOT6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 6.2A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V |
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| FDC699P_F077 | onsemi |
Description: MOSFET P-CH 20V 7A SUPERSOT6Packaging: Tape & Reel (TR) Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 FLMP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 10 V |
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В кошику од. на суму грн. | |||||||||||||||||
| FDC796N_F077 | onsemi |
Description: MOSFET N-CH 30V 12.5A SUPERSOT6Packaging: Tape & Reel (TR) Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 FLMP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1444 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. |
| CNY174SM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 320% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 160% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 320% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 160% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
на замовлення 1539 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.15 грн |
| 10+ | 32.23 грн |
| 100+ | 23.45 грн |
| 500+ | 18.33 грн |
| 1000+ | 17.11 грн |
| CNY174SR2M |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 160% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 320% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 160% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 320% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 20.04 грн |
| CNY174SR2VM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 320% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 160% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 320% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 160% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CNY174SVM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 320% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 160% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 320% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 160% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CNY174TM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 320% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 160% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Bulk
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 320% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 160% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Bulk
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CNY17F1SR2VM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS 6SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 80% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 40% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISO 4.17KV TRANS 6SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 80% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 40% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CNY17F1SVM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS 6SMD
Current Transfer Ratio (Min): 40% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 80% @ 10mA
Vce Saturation (Max): 400mV
Description: OPTOISO 4.17KV TRANS 6SMD
Current Transfer Ratio (Min): 40% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 80% @ 10mA
Vce Saturation (Max): 400mV
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CNY17F1TM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS 6DIP
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 80% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 40% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Bulk
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Description: OPTOISO 4.17KV TRANS 6DIP
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 80% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 40% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Bulk
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| CNY17F2SM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 63% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 63% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 1826 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.82 грн |
| 50+ | 24.10 грн |
| 100+ | 22.02 грн |
| 500+ | 17.17 грн |
| 1000+ | 16.02 грн |
| CNY17F2SR2M_F132 |
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Виробник: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CNY17F2SR2VM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CNY17F2TM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Bulk
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Bulk
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
товару немає в наявності
В кошику
од. на суму грн.
| CNY17F2TM_F132 |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Bulk
Current - Output / Channel: 50mA
Input Type: DC
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Bulk
Current - Output / Channel: 50mA
Input Type: DC
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CNY17F2TVM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 63% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 63% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 908 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.71 грн |
| 50+ | 22.32 грн |
| 100+ | 20.39 грн |
| 500+ | 15.87 грн |
| CNY17F2VM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Bulk
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CNY17F3SM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
на замовлення 4465 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.71 грн |
| 50+ | 22.32 грн |
| 100+ | 20.39 грн |
| 500+ | 15.87 грн |
| 1000+ | 14.80 грн |
| 2000+ | 13.88 грн |
| CNY17F3SR2M |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 18.76 грн |
| CNY17F3SR2M_F132 |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CNY17F3SR2VM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
на замовлення 56000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 18.76 грн |
| 2000+ | 16.98 грн |
| CNY17F3SR2VM_F132 |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CNY17F3SVM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CNY17F3TVM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 200% @ 10mA
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 200% @ 10mA
на замовлення 24576 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.71 грн |
| 50+ | 22.62 грн |
| 100+ | 20.66 грн |
| 500+ | 16.08 грн |
| 1000+ | 15.00 грн |
| 2000+ | 14.07 грн |
| 5000+ | 12.85 грн |
| 10000+ | 12.23 грн |
| CNY17F4SR2VM_F132 |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 160% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 320% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 160% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 320% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| D44H10TU |
![]() |
Виробник: onsemi
Description: TRANS NPN 80V 8A TO220-3
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-220-3
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN 80V 8A TO220-3
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-220-3
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FAN4800IM |
![]() |
Виробник: onsemi
Description: IC PFC CTLR CCM/DCM 84KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 16.5V
Frequency - Switching: 66kHz ~ 84kHz
Mode: Continuous Conduction (CCM), Discontinuous Conduction (DCM)
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Current - Startup: 100 µA
Description: IC PFC CTLR CCM/DCM 84KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 16.5V
Frequency - Switching: 66kHz ~ 84kHz
Mode: Continuous Conduction (CCM), Discontinuous Conduction (DCM)
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Current - Startup: 100 µA
товару немає в наявності
В кошику
од. на суму грн.
| FAN5240QSC |
![]() |
Виробник: onsemi
Description: IC REG CTRLR MULTIPH 1OUT 28QSOP
Part Status: Obsolete
Supplier Device Package: 28-QSOP
Applications: Controller, AMD Mobile Athlon™, Duron™
Operating Temperature: -10°C ~ 85°C
Voltage - Input: 6V ~ 24V
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 0.93V ~ 2V
Package / Case: 28-SSOP (0.154", 3.90mm Width)
Packaging: Tube
Description: IC REG CTRLR MULTIPH 1OUT 28QSOP
Part Status: Obsolete
Supplier Device Package: 28-QSOP
Applications: Controller, AMD Mobile Athlon™, Duron™
Operating Temperature: -10°C ~ 85°C
Voltage - Input: 6V ~ 24V
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 0.93V ~ 2V
Package / Case: 28-SSOP (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| FAN7311BM |
![]() |
Виробник: onsemi
Description: IC LCD BKLT INVERTER DRV 20SOIC
Part Status: Obsolete
Supplier Device Package: 20-SOIC
Applications: LCD TV/Monitor
Voltage - Supply: 5V ~ 25.5V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Description: IC LCD BKLT INVERTER DRV 20SOIC
Part Status: Obsolete
Supplier Device Package: 20-SOIC
Applications: LCD TV/Monitor
Voltage - Supply: 5V ~ 25.5V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| FAN7311M |
![]() |
Виробник: onsemi
Description: IC LCD BKLT INVERTER DRV 20SOIC
Part Status: Obsolete
Supplier Device Package: 20-SOIC
Applications: LCD TV/Monitor
Voltage - Supply: 5V ~ 25.5V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Description: IC LCD BKLT INVERTER DRV 20SOIC
Part Status: Obsolete
Supplier Device Package: 20-SOIC
Applications: LCD TV/Monitor
Voltage - Supply: 5V ~ 25.5V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| FAN7382M1 |
![]() |
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOP
Rise / Fall Time (Typ): 60ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOP
Rise / Fall Time (Typ): 60ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 4860 шт
В кошику
од. на суму грн.
| FAN7384M |
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Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 13V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: IC GATE DRVR HALF-BRIDGE 14SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 13V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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| FAN7387M |
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Виробник: onsemi
Description: IC BALLAST CNTRL 22KHZ 8SOP
Current - Supply: 800 µA
Part Status: Obsolete
Dimming: No
Supplier Device Package: 8-SOIC
Voltage - Supply: 11V ~ 14V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 18kHz ~ 22kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: IC BALLAST CNTRL 22KHZ 8SOP
Current - Supply: 800 µA
Part Status: Obsolete
Dimming: No
Supplier Device Package: 8-SOIC
Voltage - Supply: 11V ~ 14V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 18kHz ~ 22kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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| FAN7388M |
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Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Part Status: Obsolete
Current - Peak Output (Source, Sink): 350mA, 650mA
Logic Voltage - VIL, VIH: 1V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 20-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Part Status: Obsolete
Current - Peak Output (Source, Sink): 350mA, 650mA
Logic Voltage - VIL, VIH: 1V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 20-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
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| FAN7390M |
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Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 22V
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 22V
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| FAN7390M1 |
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Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 14-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 22V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: IC GATE DRVR HALF-BRIDGE 14SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 14-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 22V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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| FAN7602BM |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TA)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-SOIC
Fault Protection: Over Load, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 48 W
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TA)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-SOIC
Fault Protection: Over Load, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 48 W
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| FAN7711M |
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Виробник: onsemi
Description: IC BALLAST CNTRL 57.3KHZ 8SOP
Current - Supply: 3.2 mA
Dimming: No
Supplier Device Package: 8-SOIC
Voltage - Supply: 12.4V ~ 15.2V
Operating Temperature: -25°C ~ 125°C
Type: Ballast Controller
Frequency: 48.7kHz ~ 57.3kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: IC BALLAST CNTRL 57.3KHZ 8SOP
Current - Supply: 3.2 mA
Dimming: No
Supplier Device Package: 8-SOIC
Voltage - Supply: 12.4V ~ 15.2V
Operating Temperature: -25°C ~ 125°C
Type: Ballast Controller
Frequency: 48.7kHz ~ 57.3kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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| FAN7842M |
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Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 60ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 60ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 8100 шт
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| FAN7888M |
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Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
DigiKey Programmable: Not Verified
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| FCA16N60_F109 |
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Виробник: onsemi
Description: MOSFET N-CH 600V 16A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET N-CH 600V 16A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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| FCA47N60-F109 |
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Виробник: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 879.93 грн |
| 30+ | 514.09 грн |
| FCPF20N60TYDTU |
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Виробник: onsemi
Description: MOSFET N-CH 600V 20A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
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Мінімальне замовлення: 800 шт
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| FD70N20PWD |
Виробник: onsemi
Description: MOSFET N-CH 200V 70A TO3P
Packaging: Tube
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: TO-3P
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Description: MOSFET N-CH 200V 70A TO3P
Packaging: Tube
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: TO-3P
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
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| FDA20N50-F109 |
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Виробник: onsemi
Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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| FDA59N25 |
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Виробник: onsemi
Description: MOSFET N-CH 250V 59A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 29.5A, 10V
Power Dissipation (Max): 392W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
Description: MOSFET N-CH 250V 59A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 29.5A, 10V
Power Dissipation (Max): 392W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 304.44 грн |
| 30+ | 162.89 грн |
| 120+ | 134.21 грн |
| FDA59N30 |
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Виробник: onsemi
Description: MOSFET N-CH 300V 59A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 29.5A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
Description: MOSFET N-CH 300V 59A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 29.5A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
на замовлення 1328 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 347.93 грн |
| 30+ | 187.74 грн |
| 120+ | 155.38 грн |
| 510+ | 123.55 грн |
| 1020+ | 116.73 грн |
| FDA8440 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 30A/100A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 24740 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET N-CH 40V 30A/100A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 24740 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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| FDB12N50FTM-WS |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 500V 11.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 500V 11.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| FDB12N50UTM_WS |
Виробник: onsemi
Description: MOSFET N-CH 500V 10A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Description: MOSFET N-CH 500V 10A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
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| FDB8441-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 28A/80A TO263AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 28A/80A TO263AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| FDB8444TS |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 20A/70A TO263-5
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 338 nC @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263-5
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 20A/70A TO263-5
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 338 nC @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263-5
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Packaging: Tape & Reel (TR)
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| FDC2512_F095 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 150V 1.4A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 425mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 150V 1.4A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 425mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| FDC2612_F095 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 200V 1.1A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 200V 1.1A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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| FDC3512_F095 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 3A SUPERSOT6
Description: MOSFET N-CH 80V 3A SUPERSOT6
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| FDC5612_F095 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 4.3A SUPERSOT6
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 60V 4.3A SUPERSOT6
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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| FDC6000NZ_F077 |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 20V 7.3A 6SSOT
Supplier Device Package: SuperSOT™-6 FLMP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 7.3A 6SSOT
Supplier Device Package: SuperSOT™-6 FLMP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Packaging: Tape & Reel (TR)
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| FDC633N_F095 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 5.2A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 5.2A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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| FDC640P_F095 |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 4.5A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 4.5A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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| FDC645N_F095 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 5.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
Description: MOSFET N-CH 30V 5.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
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| FDC699P_F077 |
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Виробник: onsemi
Description: MOSFET P-CH 20V 7A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6 FLMP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 10 V
Description: MOSFET P-CH 20V 7A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6 FLMP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 10 V
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| FDC796N_F077 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 12.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6 FLMP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1444 pF @ 15 V
Description: MOSFET N-CH 30V 12.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6 FLMP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1444 pF @ 15 V
товару немає в наявності
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