| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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FDB047N10 | onsemi |
 Description: MOSFET N-CH 100V 120A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
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FPF1003A | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP Supplier Device Package: 6-WLCSP (0.96x1.66) Ratio - Input:Output: 1:1 Current - Output (Max): 2A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.2V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 20mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: P-Channel Package / Case: 6-UFBGA, WLCSP Features: Slew Rate Controlled Packaging: Cut Tape (CT) |
на замовлення 4802 шт: термін постачання 21-31 дні (днів) |
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FDA24N50 | onsemi |
Description: MOSFET N-CH 500V 24A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 12A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDA28N50 | onsemi |
Description: MOSFET N-CH 500V 28A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 14A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V |
на замовлення 261 шт: термін постачання 21-31 дні (днів) |
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FGH60N60SFDTU | onsemi |
Description: IGBT FIELD STOP 600V 120A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 22ns/134ns Switching Energy: 1.79mJ (on), 670µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 198 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 378 W |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||||
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FGH60N60UFDTU | onsemi |
Description: IGBT FIELD STOP 600V 120A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 23ns/130ns Switching Energy: 1.81mJ (on), 810µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 188 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 298 W |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||||
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FSUSB104UMX | onsemi |
Description: IC USB SWITCH DUAL DPDT 10UMLP Number of Channels: 1 Switch Circuit: DPDT Voltage - Supply, Single (V+): 3V ~ 4.4V Supplier Device Package: 10-UMLP (1.8x1.4) -3db Bandwidth: 720MHz On-State Resistance (Max): 6.5Ohm Applications: USB Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-UFQFN Features: Bi-Directional, USB 2.0 Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SG6521SZ | onsemi |
Description: IC SUPERVISOR 4 CHANNEL 16SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSUSB104UMX | onsemi |
Description: IC USB SWITCH DUAL DPDT 10UMLP Number of Channels: 1 Switch Circuit: DPDT Voltage - Supply, Single (V+): 3V ~ 4.4V Supplier Device Package: 10-UMLP (1.8x1.4) -3db Bandwidth: 720MHz On-State Resistance (Max): 6.5Ohm Applications: USB Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-UFQFN Features: Bi-Directional, USB 2.0 Packaging: Cut Tape (CT) |
на замовлення 13767 шт: термін постачання 21-31 дні (днів) |
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SG6521SZ | onsemi |
Description: IC SUPERVISOR 4 CHANNEL 16SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4002_NL | onsemi |
Description: DIODE STANDARD 100V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 25000 шт В кошику од. на суму грн. | ||||||||||||||||
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1N4004_NL | onsemi |
Description: DIODE STANDARD 400V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 400 |
товару немає в наявності |
Мінімальне замовлення: 25000 шт В кошику од. на суму грн. | ||||||||||||||||
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1N4448WT | onsemi |
Description: DIODE STANDARD 75V 200MA SOD523F Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523F Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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1N5231C | onsemi |
Description: DIODE ZENER 5.1V 500MW DO35 Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 2 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 Impedance (Max) (Zzt): 17 Ohms Voltage - Zener (Nom) (Vz): 5.1 V Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% |
на замовлення 2741 шт: термін постачання 21-31 дні (днів) |
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1N5231CTR | onsemi |
Description: DIODE ZENER 5.1V 500MW DO35 Current - Reverse Leakage @ Vr: 5 µA @ 2 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Impedance (Max) (Zzt): 17 Ohms Voltage - Zener (Nom) (Vz): 5.1 V Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: DO-35 |
на замовлення 85000 шт: термін постачання 21-31 дні (днів) |
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1N914BWT | onsemi |
Description: DIODE STANDARD 75V 200MA SOD523F Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523F Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 1556900 шт: термін постачання 21-31 дні (днів) |
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2N5245_J35Z | onsemi |
Description: RF MOSFET JFET 30V TO92-3 Voltage - Rated: 30 V Part Status: Obsolete Supplier Device Package: TO-92-3 Technology: JFET Configuration: N-Channel Mounting Type: Through Hole Current Rating (Amps): 15mA Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N5246_J35Z | onsemi |
Description: RF MOSFET JFET 30V TO92-3 Voltage - Rated: 30 V Supplier Device Package: TO-92-3 Technology: JFET Configuration: N-Channel Mounting Type: Through Hole Current Rating (Amps): 7mA Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N5247_J35Z | onsemi |
Description: RF MOSFET JFET 30V TO92-3 Voltage - Rated: 30 V Supplier Device Package: TO-92-3 Noise Figure: 4dB Technology: JFET Configuration: N-Channel Frequency: 400MHz Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N5950_J35Z | onsemi |
Description: RF MOSFET JFET 30V TO92-3 Voltage - Rated: 30 V Part Status: Obsolete Supplier Device Package: TO-92-3 Configuration: N-Channel Mounting Type: Through Hole Current Rating (Amps): 15mA Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk Technology: JFET |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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2N5951_J35Z | onsemi |
Description: RF MOSFET JFET 15V TO92-3 Voltage - Test: 15 V Voltage - Rated: 30 V Part Status: Obsolete Supplier Device Package: TO-92-3 Noise Figure: 2dB Technology: JFET Configuration: N-Channel Frequency: 1kHz Mounting Type: Through Hole Current Rating (Amps): 13mA Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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2N5952_J35Z | onsemi |
Description: RF MOSFET JFET 15V TO92-3 Voltage - Test: 15 V Voltage - Rated: 30 V Part Status: Obsolete Supplier Device Package: TO-92-3 Configuration: N-Channel Frequency: 1kHz Mounting Type: Through Hole Current Rating (Amps): 8mA Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk Noise Figure: 2dB Technology: JFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N5953_J35Z | onsemi |
Description: RF MOSFET JFET 15V TO92-3 Configuration: N-Channel Frequency: 1kHz Mounting Type: Through Hole Current Rating (Amps): 5mA Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk Voltage - Test: 15 V Voltage - Rated: 30 V Part Status: Obsolete Supplier Device Package: TO-92-3 Noise Figure: 2dB Technology: JFET |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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2N7002_NB9G002 | onsemi |
Description: MOSFET N-CH 60V 115MA SOT-23 Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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4N26M_F132 | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP Packaging: Bulk Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 500mV Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 2µs, 2µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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4N32SVM | onsemi |
Description: OPTOISO 4.17KV DARL W/BASE 6SMD Vce Saturation (Max): 1V Current Transfer Ratio (Min): 500% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 150mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.2V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Darlington with Base Package / Case: 6-SMD, Gull Wing Packaging: Bulk Current - DC Forward (If) (Max): 80 mA Number of Channels: 1 Part Status: Obsolete Turn On / Turn Off Time (Typ): 5µs, 100µs (Max) Voltage - Output (Max): 30V Supplier Device Package: 6-SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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4N33TVM | onsemi |
Description: OPTOISO 4.17KV DARL W/BASE 6-DIP Packaging: Tube Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Darlington with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 500% @ 10mA Vce Saturation (Max): 1V Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 5µs, 100µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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4N35M_F132 | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP Packaging: Bulk Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 300mV Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 2µs, 2µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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4N37M_F132 | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Obsolete Voltage - Isolation: 4170Vrms Input Type: DC Voltage - Forward (Vf) (Typ): 1.18V Operating Temperature: -40°C ~ 100°C Mounting Type: Through Hole Output Type: Transistor with Base Turn On / Turn Off Time (Typ): 2µs, 2µs Voltage - Output (Max): 30V Supplier Device Package: 6-DIP Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 100% @ 10mA Package / Case: 6-DIP (0.300", 7.62mm) Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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74LCX373BQX | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-DQFN Supplier Device Package: 20-DQFN (2.5x4.5) Delay Time - Propagation: 1.5ns Current - Output High, Low: 24mA, 24mA Independent Circuits: 1 Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: D-Type Transparent Latch Circuit: 8:8 Mounting Type: Surface Mount Output Type: Tri-State Package / Case: 20-WFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LCX541BQX | onsemi |
Description: IC BUF NON-INVERT 3.6V 20DQFN Part Status: Obsolete Supplier Device Package: 20-DQFN (2.5x4.5) Current - Output High, Low: 24mA, 24mA Number of Bits per Element: 8 Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-WFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74VCX162839MTDX | onsemi |
Description: IC REGISTER BUFFER 56-TSSOP Number of Bits per Element: 20 Supplier Device Package: 56-TSSOP Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: Register, Multiplexed Function: Universal Number of Elements: 1 Mounting Type: Surface Mount Output Type: Tri-State Package / Case: 56-TFSOP (0.240", 6.10mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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74VCX16839MTD | onsemi |
Description: IC BUF NON-INVERT 3.6V 56TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74VCX16839MTDX | onsemi |
Description: IC BUF NON-INVERT 3.6V 56TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAX16 | onsemi |
Description: DIODE STANDARD 150V 200MA DO35 Current - Reverse Leakage @ Vr: 100 nA @ 150 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-35 Current - Average Rectified (Io): 200mA Technology: Standard Reverse Recovery Time (trr): 120 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Bulk |
на замовлення 8196 шт: термін постачання 21-31 дні (днів) |
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BAX16TR | onsemi |
Description: DIODE GEN PURP 150V 200MA DO35 Current - Reverse Leakage @ Vr: 100 nA @ 150 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-35 Current - Average Rectified (Io): 200mA Technology: Standard Reverse Recovery Time (trr): 120 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Reel (TR) |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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BC182B_J35Z | onsemi |
Description: TRANS NPN 50V 0.1A TO-92-3 Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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BC182LA_J35Z | onsemi |
Description: TRANS NPN 50V 0.1A TO92-3 Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: TO-92-3 Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC182LB_J35Z | onsemi |
Description: TRANS NPN 50V 0.1A TO92-3 Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
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BC182L_J35Z | onsemi |
Description: TRANS NPN 50V 0.1A TO92-3 Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
BC182_J35Z | onsemi |
Description: TRANS NPN 50V 0.1A TO92-3 Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
BC183C_J35Z | onsemi |
Description: TRANS NPN 30V 0.1A TO-92-3 Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: TO-92-3 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
BC183LC_J35Z | onsemi |
Description: TRANS NPN 30V 0.1A TO-92-3 Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: TO-92-3 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
BC183_J35Z | onsemi |
Description: TRANS NPN 30V 0.1A TO-92-3 Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: TO-92-3 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
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BC184C_J35Z | onsemi |
Description: TRANS NPN 30V 0.5A TO-92-3 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: TO-92-3 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
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BC184LC_J35Z | onsemi |
Description: TRANS NPN 30V 0.2A TO92-3 Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 200 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
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BC184L_J35Z | onsemi |
Description: TRANS NPN 30V 0.5A TO-92-3 Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
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BC184_J35Z | onsemi |
Description: TRANS NPN 30V 0.1A TO-92-3 Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
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BC212B_J35Z | onsemi |
Description: TRANS PNP 50V 0.1A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 350 mW |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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BC212L_J35Z | onsemi |
Description: TRANS PNP 50V 0.3A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 625 mW |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
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BC214LB_J35Z | onsemi |
Description: TRANS PNP 30V 0.5A TO92-3 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92-3 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC214LC_J35Z | onsemi |
Description: TRANS PNP 30V 0.5A TO92-3 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92-3 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC214L_J35Z | onsemi |
Description: TRANS PNP 30V 0.5A TO92-3 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92-3 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC214_J35Z | onsemi |
Description: TRANS PNP 30V 0.5A TO-92-3 Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92-3 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
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BC237A_J35Z | onsemi |
Description: TRANS NPN 45V 0.1A TO92-3 Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC237B_J35Z | onsemi |
Description: TRANS NPN 45V 0.1A TO92-3 Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC237_J35Z | onsemi |
Description: TRANS NPN 45V 0.1A TO-92-3 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: TO-92-3 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
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BC238A_J35Z | onsemi |
Description: TRANS NPN 25V 0.1A TO92-3 Packaging: Bulk Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
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BC238_J35Z | onsemi |
Description: TRANS NPN 25V 0.1A TO-92-3 Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 25 V Packaging: Bulk Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
BC307B_J35Z | onsemi |
Description: TRANS PNP 45V 0.1A TO-92-3 Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
| FDB047N10 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240.76 грн |
| 10+ | 185.10 грн |
| 100+ | 152.92 грн |
| FPF1003A |
|
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Supplier Device Package: 6-WLCSP (0.96x1.66)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Supplier Device Package: 6-WLCSP (0.96x1.66)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
на замовлення 4802 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.78 грн |
| 10+ | 63.72 грн |
| 25+ | 60.46 грн |
| 100+ | 43.57 грн |
| 250+ | 38.51 грн |
| 500+ | 36.48 грн |
| 1000+ | 27.91 грн |
| FDA24N50 |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 24A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 12A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Description: MOSFET N-CH 500V 24A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 12A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FDA28N50 |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 28A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 14A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
Description: MOSFET N-CH 500V 28A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 14A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
на замовлення 261 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 406.18 грн |
| 30+ | 221.97 грн |
| 120+ | 184.67 грн |
| FGH60N60SFDTU |
|
Виробник: onsemi
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| FGH60N60UFDTU |
|
Виробник: onsemi
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/130ns
Switching Energy: 1.81mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/130ns
Switching Energy: 1.81mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| FSUSB104UMX |
|
Виробник: onsemi
Description: IC USB SWITCH DUAL DPDT 10UMLP
Number of Channels: 1
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 3V ~ 4.4V
Supplier Device Package: 10-UMLP (1.8x1.4)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 6.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Features: Bi-Directional, USB 2.0
Packaging: Tape & Reel (TR)
Description: IC USB SWITCH DUAL DPDT 10UMLP
Number of Channels: 1
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 3V ~ 4.4V
Supplier Device Package: 10-UMLP (1.8x1.4)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 6.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Features: Bi-Directional, USB 2.0
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 24.04 грн |
| SG6521SZ |
|
Виробник: onsemi
Description: IC SUPERVISOR 4 CHANNEL 16SOP
Description: IC SUPERVISOR 4 CHANNEL 16SOP
товару немає в наявності
В кошику
од. на суму грн.
| FSUSB104UMX |
|
Виробник: onsemi
Description: IC USB SWITCH DUAL DPDT 10UMLP
Number of Channels: 1
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 3V ~ 4.4V
Supplier Device Package: 10-UMLP (1.8x1.4)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 6.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
Description: IC USB SWITCH DUAL DPDT 10UMLP
Number of Channels: 1
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 3V ~ 4.4V
Supplier Device Package: 10-UMLP (1.8x1.4)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 6.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
на замовлення 13767 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 105.62 грн |
| 10+ | 62.52 грн |
| 25+ | 52.20 грн |
| 100+ | 38.02 грн |
| 250+ | 32.64 грн |
| 500+ | 29.33 грн |
| 1000+ | 26.12 грн |
| 2500+ | 23.18 грн |
| SG6521SZ |
|
Виробник: onsemi
Description: IC SUPERVISOR 4 CHANNEL 16SOP
Description: IC SUPERVISOR 4 CHANNEL 16SOP
товару немає в наявності
В кошику
од. на суму грн.
| 1N4002_NL |
|
Виробник: onsemi
Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 25000 шт
В кошику
од. на суму грн.
| 1N4004_NL |
|
Виробник: onsemi
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
товару немає в наявності
Мінімальне замовлення: 25000 шт
В кошику
од. на суму грн.
| 1N4448WT |
|
Виробник: onsemi
Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 2.17 грн |
| 16000+ | 1.88 грн |
| 1N5231C |
|
Виробник: onsemi
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
на замовлення 2741 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.99 грн |
| 91+ | 3.29 грн |
| 160+ | 1.87 грн |
| 1N5231CTR |
|
Виробник: onsemi
Description: DIODE ZENER 5.1V 500MW DO35
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: DO-35
Description: DIODE ZENER 5.1V 500MW DO35
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: DO-35
на замовлення 85000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 1.92 грн |
| 10000+ | 1.65 грн |
| 1N914BWT |
|
Виробник: onsemi
Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 1556900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 1.89 грн |
| 16000+ | 1.63 грн |
| 2N5245_J35Z |
|
Виробник: onsemi
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Technology: JFET
Configuration: N-Channel
Mounting Type: Through Hole
Current Rating (Amps): 15mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Technology: JFET
Configuration: N-Channel
Mounting Type: Through Hole
Current Rating (Amps): 15mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2N5246_J35Z |
|
Виробник: onsemi
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Supplier Device Package: TO-92-3
Technology: JFET
Configuration: N-Channel
Mounting Type: Through Hole
Current Rating (Amps): 7mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Supplier Device Package: TO-92-3
Technology: JFET
Configuration: N-Channel
Mounting Type: Through Hole
Current Rating (Amps): 7mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2N5247_J35Z |
Виробник: onsemi
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Supplier Device Package: TO-92-3
Noise Figure: 4dB
Technology: JFET
Configuration: N-Channel
Frequency: 400MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Supplier Device Package: TO-92-3
Noise Figure: 4dB
Technology: JFET
Configuration: N-Channel
Frequency: 400MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2N5950_J35Z |
|
Виробник: onsemi
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Configuration: N-Channel
Mounting Type: Through Hole
Current Rating (Amps): 15mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Technology: JFET
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Configuration: N-Channel
Mounting Type: Through Hole
Current Rating (Amps): 15mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Technology: JFET
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| 2N5951_J35Z |
|
Виробник: onsemi
Description: RF MOSFET JFET 15V TO92-3
Voltage - Test: 15 V
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Noise Figure: 2dB
Technology: JFET
Configuration: N-Channel
Frequency: 1kHz
Mounting Type: Through Hole
Current Rating (Amps): 13mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: RF MOSFET JFET 15V TO92-3
Voltage - Test: 15 V
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Noise Figure: 2dB
Technology: JFET
Configuration: N-Channel
Frequency: 1kHz
Mounting Type: Through Hole
Current Rating (Amps): 13mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| 2N5952_J35Z |
|
Виробник: onsemi
Description: RF MOSFET JFET 15V TO92-3
Voltage - Test: 15 V
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Configuration: N-Channel
Frequency: 1kHz
Mounting Type: Through Hole
Current Rating (Amps): 8mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Noise Figure: 2dB
Technology: JFET
Description: RF MOSFET JFET 15V TO92-3
Voltage - Test: 15 V
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Configuration: N-Channel
Frequency: 1kHz
Mounting Type: Through Hole
Current Rating (Amps): 8mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Noise Figure: 2dB
Technology: JFET
товару немає в наявності
В кошику
од. на суму грн.
| 2N5953_J35Z |
|
Виробник: onsemi
Description: RF MOSFET JFET 15V TO92-3
Configuration: N-Channel
Frequency: 1kHz
Mounting Type: Through Hole
Current Rating (Amps): 5mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Voltage - Test: 15 V
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Noise Figure: 2dB
Technology: JFET
Description: RF MOSFET JFET 15V TO92-3
Configuration: N-Channel
Frequency: 1kHz
Mounting Type: Through Hole
Current Rating (Amps): 5mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Voltage - Test: 15 V
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Noise Figure: 2dB
Technology: JFET
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
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| 2N7002_NB9G002 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 115MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 115MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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| 4N26M_F132 |
|
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 4N32SVM |
|
Виробник: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6SMD
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 500% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Current - DC Forward (If) (Max): 80 mA
Number of Channels: 1
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Voltage - Output (Max): 30V
Supplier Device Package: 6-SMD
Description: OPTOISO 4.17KV DARL W/BASE 6SMD
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 500% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Current - DC Forward (If) (Max): 80 mA
Number of Channels: 1
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Voltage - Output (Max): 30V
Supplier Device Package: 6-SMD
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В кошику
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| 4N33TVM |
|
Виробник: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOISO 4.17KV DARL W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.80 грн |
| 50+ | 32.22 грн |
| 100+ | 29.55 грн |
| 500+ | 23.26 грн |
| 1000+ | 21.80 грн |
| 4N35M_F132 |
|
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 4N37M_F132 |
|
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Voltage - Isolation: 4170Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.18V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Turn On / Turn Off Time (Typ): 2µs, 2µs
Voltage - Output (Max): 30V
Supplier Device Package: 6-DIP
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 10mA
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Bulk
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Voltage - Isolation: 4170Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.18V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Turn On / Turn Off Time (Typ): 2µs, 2µs
Voltage - Output (Max): 30V
Supplier Device Package: 6-DIP
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 10mA
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 74LCX373BQX |
|
Виробник: onsemi
Description: IC D-TYPE TRANSP 8:8 20-DQFN
Supplier Device Package: 20-DQFN (2.5x4.5)
Delay Time - Propagation: 1.5ns
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Transparent Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC D-TYPE TRANSP 8:8 20-DQFN
Supplier Device Package: 20-DQFN (2.5x4.5)
Delay Time - Propagation: 1.5ns
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Transparent Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| 74LCX541BQX |
Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 20DQFN
Part Status: Obsolete
Supplier Device Package: 20-DQFN (2.5x4.5)
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC BUF NON-INVERT 3.6V 20DQFN
Part Status: Obsolete
Supplier Device Package: 20-DQFN (2.5x4.5)
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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В кошику
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| 74VCX162839MTDX |
|
Виробник: onsemi
Description: IC REGISTER BUFFER 56-TSSOP
Number of Bits per Element: 20
Supplier Device Package: 56-TSSOP
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Register, Multiplexed
Function: Universal
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Packaging: Tape & Reel (TR)
Description: IC REGISTER BUFFER 56-TSSOP
Number of Bits per Element: 20
Supplier Device Package: 56-TSSOP
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Register, Multiplexed
Function: Universal
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 74VCX16839MTD |
|
Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 56TSSOP
Description: IC BUF NON-INVERT 3.6V 56TSSOP
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| 74VCX16839MTDX |
|
Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 56TSSOP
Description: IC BUF NON-INVERT 3.6V 56TSSOP
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| BAX16 |
|
Виробник: onsemi
Description: DIODE STANDARD 150V 200MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35
Current - Average Rectified (Io): 200mA
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
Description: DIODE STANDARD 150V 200MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35
Current - Average Rectified (Io): 200mA
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
на замовлення 8196 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.43 грн |
| 41+ | 7.33 грн |
| 100+ | 4.77 грн |
| 500+ | 3.05 грн |
| 1000+ | 2.44 грн |
| 2000+ | 2.31 грн |
| 5000+ | 2.14 грн |
| BAX16TR |
|
Виробник: onsemi
Description: DIODE GEN PURP 150V 200MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35
Current - Average Rectified (Io): 200mA
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 150V 200MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35
Current - Average Rectified (Io): 200mA
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 2.95 грн |
| BC182B_J35Z |
|
Виробник: onsemi
Description: TRANS NPN 50V 0.1A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: TRANS NPN 50V 0.1A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BC182LA_J35Z |
|
Виробник: onsemi
Description: TRANS NPN 50V 0.1A TO92-3
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: TRANS NPN 50V 0.1A TO92-3
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
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В кошику
од. на суму грн.
| BC182LB_J35Z |
|
Виробник: onsemi
Description: TRANS NPN 50V 0.1A TO92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: TRANS NPN 50V 0.1A TO92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| BC182L_J35Z |
|
Виробник: onsemi
Description: TRANS NPN 50V 0.1A TO92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: TRANS NPN 50V 0.1A TO92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BC182_J35Z |
|
Виробник: onsemi
Description: TRANS NPN 50V 0.1A TO92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: TRANS NPN 50V 0.1A TO92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BC183C_J35Z |
|
Виробник: onsemi
Description: TRANS NPN 30V 0.1A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: TRANS NPN 30V 0.1A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BC183LC_J35Z |
|
Виробник: onsemi
Description: TRANS NPN 30V 0.1A TO-92-3
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Description: TRANS NPN 30V 0.1A TO-92-3
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BC183_J35Z |
|
Виробник: onsemi
Description: TRANS NPN 30V 0.1A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: TRANS NPN 30V 0.1A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BC184C_J35Z |
|
Виробник: onsemi
Description: TRANS NPN 30V 0.5A TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Description: TRANS NPN 30V 0.5A TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BC184LC_J35Z |
|
Виробник: onsemi
Description: TRANS NPN 30V 0.2A TO92-3
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Description: TRANS NPN 30V 0.2A TO92-3
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
товару немає в наявності
В кошику
од. на суму грн.
| BC184L_J35Z |
|
Виробник: onsemi
Description: TRANS NPN 30V 0.5A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: TRANS NPN 30V 0.5A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BC184_J35Z |
|
Виробник: onsemi
Description: TRANS NPN 30V 0.1A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: TRANS NPN 30V 0.1A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BC212B_J35Z |
|
Виробник: onsemi
Description: TRANS PNP 50V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Description: TRANS PNP 50V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BC212L_J35Z |
|
Виробник: onsemi
Description: TRANS PNP 50V 0.3A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Description: TRANS PNP 50V 0.3A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BC214LB_J35Z |
|
Виробник: onsemi
Description: TRANS PNP 30V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: TRANS PNP 30V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| BC214LC_J35Z |
|
Виробник: onsemi
Description: TRANS PNP 30V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: TRANS PNP 30V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| BC214L_J35Z |
|
Виробник: onsemi
Description: TRANS PNP 30V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: TRANS PNP 30V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| BC214_J35Z |
|
Виробник: onsemi
Description: TRANS PNP 30V 0.5A TO-92-3
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Description: TRANS PNP 30V 0.5A TO-92-3
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BC237A_J35Z |
|
Виробник: onsemi
Description: TRANS NPN 45V 0.1A TO92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: TRANS NPN 45V 0.1A TO92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| BC237B_J35Z |
|
Виробник: onsemi
Description: TRANS NPN 45V 0.1A TO92-3
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 500 mW
Description: TRANS NPN 45V 0.1A TO92-3
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| BC237_J35Z |
|
Виробник: onsemi
Description: TRANS NPN 45V 0.1A TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Description: TRANS NPN 45V 0.1A TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BC238A_J35Z |
|
Виробник: onsemi
Description: TRANS NPN 25V 0.1A TO92-3
Packaging: Bulk
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: TRANS NPN 25V 0.1A TO92-3
Packaging: Bulk
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
товару немає в наявності
В кошику
од. на суму грн.
| BC238_J35Z |
|
Виробник: onsemi
Description: TRANS NPN 25V 0.1A TO-92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Packaging: Bulk
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Description: TRANS NPN 25V 0.1A TO-92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Packaging: Bulk
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BC307B_J35Z |
|
Виробник: onsemi
Description: TRANS PNP 45V 0.1A TO-92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: TRANS PNP 45V 0.1A TO-92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.