| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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FDMA430NZ | onsemi |
 Description: MOSFET N-CH 30V 5A 6MICROFETSupplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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FDMB3800N | onsemi |
Description: MOSFET 2N-CH 30V 8MLP MICROFET Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 750mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP, MicroFET (3x1.9) Part Status: Active |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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FDMS9600S | onsemi |
Description: MOSFET 2N-CH 30V 12A 8MLP PWR56 Supplier Device Package: 8-MLP (5x6), Power56 Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1705pF @ 15V Current - Continuous Drain (Id) @ 25°C: 12A, 16A Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDP100N10 | onsemi |
Description: MOSFET N-CH 100V 75A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 467 шт: термін постачання 21-31 дні (днів) |
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FDP20N50 | onsemi |
Description: MOSFET N-CH 500V 20A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDP20N50F | onsemi |
Description: MOSFET N-CH 500V 20A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V |
на замовлення 1019 шт: термін постачання 21-31 дні (днів) |
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FDP51N25 | onsemi |
Description: MOSFET N-CH 250V 51A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 573 шт: термін постачання 21-31 дні (днів) |
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FDP55N06 | onsemi |
Description: MOSFET N-CH 60V 55A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 27.5A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDPF20N50FT | onsemi |
Description: MOSFET N-CH 500V 20A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V Power Dissipation (Max): 38.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V |
на замовлення 919 шт: термін постачання 21-31 дні (днів) |
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FDPF44N25T | onsemi |
Description: MOSFET N-CH 250V 44A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V |
на замовлення 1186 шт: термін постачання 21-31 дні (днів) |
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FDS4897C | onsemi |
Description: MOSFET N/P-CH 40V 6.2A 8SOIC Power - Max: 900mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A Drain to Source Voltage (Vdss): 40V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FDS5682 | onsemi |
Description: MOSFET N-CH 60V 7.5A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDS5692Z | onsemi |
Description: MOSFET N-CH 50V 5.8A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDS6675BZ | onsemi |
Description: MOSFET P-CH 30V 11A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 15 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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FDS8690 | onsemi |
Description: MOSFET N-CH 30V 14A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDY100PZ | onsemi |
Description: MOSFET P-CH 20V 350MA SC89-3 Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Last Time Buy Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Tape & Reel (TR) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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FDY101PZ | onsemi |
Description: MOSFET P-CH 20V 150MA SC89-3 Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FDY3000NZ | onsemi |
Description: MOSFET 2N-CH 20V 600MA SOT563F Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 446mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-563F |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FDY300NZ | onsemi |
Description: MOSFET N-CH 20V 600MA SC89-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDY301NZ | onsemi |
Description: MOSFET N-CH 20V 200MA SC89-3 Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Last Time Buy Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FFA60UP30DNTU | onsemi |
Description: DIODE ARRAY GP 300V 30A TO-3P Current - Reverse Leakage @ Vr: 100 µA @ 300 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Voltage - DC Reverse (Vr) (Max): 300 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-3P Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 55 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||||||
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FFB20UP20STM | onsemi |
Description: DIODE STANDARD 200V 20A TO263 Current - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Last Time Buy Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-263 (D2Pak) Current - Average Rectified (Io): 20A Technology: Standard Reverse Recovery Time (trr): 45 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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FFP08H60STU | onsemi |
Description: DIODE GEN PURP 600V 8A TO220-2L Current - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220-2L Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 45 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FFPF30UP20STU | onsemi |
Description: DIODE AVAL 200V 30A TO220F2L Current - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 30 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220F-2L Current - Average Rectified (Io): 30A Technology: Avalanche Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FOD3180S | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMD Packaging: Tube Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.43V Current - Peak Output: 2.5A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: cUL, UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 75ns, 55ns Common Mode Transient Immunity (Min): 15kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Pulse Width Distortion (Max): 65ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 20V |
на замовлення 5696 шт: термін постачання 21-31 дні (днів) |
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FOD3180SDV | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMD Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.43V Current - Peak Output: 2.5A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: cUL, UL, VDE Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 75ns, 55ns Common Mode Transient Immunity (Min): 15kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Pulse Width Distortion (Max): 65ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 20V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FOD420SD | onsemi |
Description: OPTOISOLATOR 5KV TRIAC 6DIP SMD Current - DC Forward (If) (Max): 30 mA Voltage - Off State: 600 V Number of Channels: 1 Part Status: Active Current - LED Trigger (Ift) (Max): 2mA Static dV/dt (Min): 10kV/µs Zero Crossing Circuit: No Supplier Device Package: 6-SMD Turn On Time: 60µs Current - Hold (Ih): 500µA Approval Agency: cUL, FIMKO, UL Voltage - Isolation: 5000Vrms Voltage - Forward (Vf) (Typ): 1.28V Operating Temperature: -55°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 6-SMD, Gull Wing Packaging: Tape & Reel (TR) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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FOD420TV | onsemi |
Description: OPTOISOLATOR 5KV TRIAC 6DIP Voltage - Isolation: 5000Vrms Voltage - Forward (Vf) (Typ): 1.28V Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Output Type: Triac Package / Case: 6-DIP (0.400", 10.16mm) Packaging: Tube Current - DC Forward (If) (Max): 30 mA Voltage - Off State: 600 V Number of Channels: 1 Part Status: Active Current - LED Trigger (Ift) (Max): 2mA Static dV/dt (Min): 10kV/µs Zero Crossing Circuit: No Supplier Device Package: 6-DIP Turn On Time: 60µs Current - Hold (Ih): 500µA Approval Agency: cUL, FIMKO, UL, VDE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FODM121 | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMD Current - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.3V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tube Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA |
на замовлення 125122 шт: термін постачання 21-31 дні (днів) |
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FODM124 | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMD Number of Channels: 1 Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 1200% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: DC Current - DC Forward (If) (Max): 50 mA Voltage - Forward (Vf) (Typ): 1.3V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tube |
на замовлення 462 шт: термін постачання 21-31 дні (днів) |
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FODM2705 | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMD Current - DC Forward (If) (Max): 50 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 40V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: AC, DC Voltage - Forward (Vf) (Typ): 1.4V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tube |
на замовлення 8481 шт: термін постачання 21-31 дні (днів) |
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FODM3063R2 | onsemi |
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD Current - DC Forward (If) (Max): 60 mA Voltage - Off State: 600 V Current - On State (It (RMS)) (Max): 70 mA Number of Channels: 1 Part Status: Active Current - LED Trigger (Ift) (Max): 5mA Static dV/dt (Min): 600V/µs Zero Crossing Circuit: Yes Supplier Device Package: 4-SMD Current - Hold (Ih): 300µA (Typ) Approval Agency: cUL, UL Voltage - Isolation: 3750Vrms Voltage - Forward (Vf) (Typ): 1.5V (Max) Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
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FQB9N50CFTM_WS | onsemi |
Description: MOSFET N-CH 500V 9A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V Power Dissipation (Max): 173W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQN1N50CTA | onsemi |
Description: MOSFET N-CH 500V 380MA TO92-3 Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 890mW (Ta), 2.08W (Tc) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Current - Continuous Drain (Id) @ 25°C: 380mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQT1N60CTF-WS | onsemi |
Description: MOSFET N-CH 600V 200MA SOT223-4 Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223-4 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.1W (Tc) Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
на замовлення 9989 шт: термін постачання 21-31 дні (днів) |
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FSBB15CH60C | onsemi |
Description: IGBT IPM 600V 15A 27-PWRDIP MOD Packaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Current: 15 A Voltage: 600 V |
товару немає в наявності |
Мінімальне замовлення: 60 шт В кошику од. на суму грн. | ||||||||||||||||||
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FSDM1265RBWDTU | onsemi |
Description: IC OFFLINE SW FLBACK TO220F-6L Power (Watts): 110 W Part Status: Obsolete Voltage - Start Up: 12 V Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Supplier Device Package: TO-220F-6L (Forming) Voltage - Supply (Vcc/Vdd): 8V ~ 20V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 66kHz Duty Cycle: 82% Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: TO-220-6 Full Pack, Formed Leads Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ISL9V5045S3ST | onsemi |
Description: IGBT 480V 51A TO263AB Power - Max: 300 W Voltage - Collector Emitter Breakdown (Max): 480 V Current - Collector (Ic) (Max): 51 A Part Status: Obsolete Gate Charge: 32 nC Test Condition: 300V, 1kOhm, 5V Td (on/off) @ 25°C: -/10.8µs Supplier Device Package: D²PAK (TO-263) Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A Input Type: Logic Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LM7809ACT | onsemi |
Description: IC REG LINEAR 9V 1A TO220-3 Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 8 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 9V Part Status: Obsolete PSRR: 71dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LM7812ACT | onsemi |
Description: IC REG LINEAR 12V 1A TO220-3 Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 8 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 12V Part Status: Obsolete PSRR: 71dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LM7815ACT | onsemi |
Description: IC REG LINEAR 15V 1A TO220-3 Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 8 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 15V Part Status: Obsolete PSRR: 70dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LM7824CT | onsemi |
Description: IC REG LINEAR 24V 1A TO220-3 Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 8 mA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 24V Part Status: Obsolete PSRR: 67dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MOC8050SR2VM | onsemi |
Description: OPTOISOLTR 4.17KV 1CH DARL 6-SMD Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Gull Wing Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 500% @ 10mA Supplier Device Package: 6-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 8.5µs, 95µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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4N33SR2M | onsemi |
Description: OPTOISO 4.17KV DARL W/BASE 6-SMD Packaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 500% @ 10mA Vce Saturation (Max): 1V Supplier Device Package: 6-SMD Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 5µs, 100µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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FAN7362MX | onsemi |
Description: IC GATE DRVR HIGH-SIDE 8SOP DigiKey Programmable: Not Verified Part Status: Last Time Buy Current - Peak Output (Source, Sink): 250mA, 500mA Logic Voltage - VIL, VIH: 0.8V, 2.9V Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single Rise / Fall Time (Typ): 70ns, 30ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FAN73832MX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 15V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 50ns, 30ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.2V, 2.9V Current - Peak Output (Source, Sink): 350mA, 650mA Part Status: Last Time Buy DigiKey Programmable: Not Verified |
на замовлення 388 шт: термін постачання 21-31 дні (днів) |
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FAN7529MX | onsemi |
 Description: IC PFC CTRLR CRM/TRANSITION 8SOPCurrent - Startup: 40 µA Part Status: Not For New Designs Supplier Device Package: 8-SOIC Mode: Critical Conduction (CRM), Discontinuous (Transition) Voltage - Supply: 12V ~ 22V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 2996 шт: термін постачання 21-31 дні (днів) |
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FDB33N25TM | onsemi |
Description: MOSFET N-CH 250V 33A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V Power Dissipation (Max): 235W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V |
на замовлення 13928 шт: термін постачання 21-31 дні (днів) |
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FDB5800 | onsemi |
Description: MOSFET N-CH 60V 14A/80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6625 pF @ 15 V |
на замовлення 4355 шт: термін постачання 21-31 дні (днів) |
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FDB8444 | onsemi |
Description: MOSFET N-CH 40V 70A TO263AB Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 8035 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 271 шт: термін постачання 21-31 дні (днів) |
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FDB8860 | onsemi |
Description: MOSFET N-CH 30V 80A TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDC658AP | onsemi |
Description: MOSFET P-CH 30V 4A SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 15 V |
на замовлення 32929 шт: термін постачання 21-31 дні (днів) |
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FDD6637 | onsemi |
Description: MOSFET P-CH 35V 13A/55A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 14A, 10V Power Dissipation (Max): 3.1W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 35 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 20 V |
на замовлення 2959 шт: термін постачання 21-31 дні (днів) |
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FDD8444 | onsemi |
Description: MOSFET N-CH 40V 145A TO252AA Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 153W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 145A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V |
на замовлення 5238 шт: термін постачання 21-31 дні (днів) |
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FDD8445 | onsemi |
Description: MOSFET N-CH 40V 70A TO252AA Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2305 шт: термін постачання 21-31 дні (днів) |
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FDMA420NZ | onsemi |
Description: MOSFET N-CH 20V 5.7A 6MICROFET Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 6250 шт: термін постачання 21-31 дні (днів) |
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FDMA430NZ | onsemi |
Description: MOSFET N-CH 30V 5A 6MICROFET Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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FDMB3800N | onsemi |
Description: MOSFET 2N-CH 30V 8MLP MICROFET Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 750mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP, MicroFET (3x1.9) Part Status: Active |
на замовлення 10662 шт: термін постачання 21-31 дні (днів) |
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FDS4897C | onsemi |
Description: MOSFET N/P-CH 40V 6.2A 8SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A Drain to Source Voltage (Vdss): 40V Power - Max: 900mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
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FDS5692Z | onsemi |
Description: MOSFET N-CH 50V 5.8A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
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| FDMA430NZ |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 5A 6MICROFET
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Description: MOSFET N-CH 30V 5A 6MICROFET
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.45 грн |
| 6000+ | 14.60 грн |
| 9000+ | 13.97 грн |
| 15000+ | 12.45 грн |
| 21000+ | 12.17 грн |
| FDMB3800N |
|
Виробник: onsemi
Description: MOSFET 2N-CH 30V 8MLP MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 750mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP, MicroFET (3x1.9)
Part Status: Active
Description: MOSFET 2N-CH 30V 8MLP MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 750mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP, MicroFET (3x1.9)
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 26.20 грн |
| 6000+ | 23.45 грн |
| 9000+ | 22.60 грн |
| FDMS9600S |
|
Виробник: onsemi
Description: MOSFET 2N-CH 30V 12A 8MLP PWR56
Supplier Device Package: 8-MLP (5x6), Power56
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1705pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 12A 8MLP PWR56
Supplier Device Package: 8-MLP (5x6), Power56
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1705pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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| FDP100N10 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 467 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 294.81 грн |
| 50+ | 146.26 грн |
| 100+ | 132.96 грн |
| FDP20N50 |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
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| FDP20N50F |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
на замовлення 1019 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 287.11 грн |
| 50+ | 141.19 грн |
| 100+ | 128.15 грн |
| 500+ | 98.83 грн |
| 1000+ | 91.95 грн |
| FDP51N25 |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 51A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 250V 51A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 573 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 209.37 грн |
| 50+ | 97.31 грн |
| 100+ | 92.27 грн |
| 500+ | 81.73 грн |
| FDP55N06 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 27.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Description: MOSFET N-CH 60V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 27.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
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| FDPF20N50FT |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
на замовлення 919 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 308.66 грн |
| 50+ | 153.20 грн |
| 100+ | 139.25 грн |
| 500+ | 107.76 грн |
| FDPF44N25T |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 44A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
Description: MOSFET N-CH 250V 44A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
на замовлення 1186 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 227.84 грн |
| 50+ | 110.25 грн |
| 100+ | 99.64 грн |
| 500+ | 76.05 грн |
| 1000+ | 70.44 грн |
| FDS4897C |
|
Виробник: onsemi
Description: MOSFET N/P-CH 40V 6.2A 8SOIC
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A
Drain to Source Voltage (Vdss): 40V
Description: MOSFET N/P-CH 40V 6.2A 8SOIC
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A
Drain to Source Voltage (Vdss): 40V
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| FDS5682 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 7.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 7.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| FDS5692Z |
|
Виробник: onsemi
Description: MOSFET N-CH 50V 5.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 50V 5.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| FDS6675BZ |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 11A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 15 V
Description: MOSFET P-CH 30V 11A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 15 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 23.62 грн |
| 5000+ | 21.04 грн |
| FDS8690 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 14A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 14A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| FDY100PZ |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 350MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Last Time Buy
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 350MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Last Time Buy
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.32 грн |
| 6000+ | 9.30 грн |
| FDY101PZ |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 150MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 150MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| FDY3000NZ |
|
Виробник: onsemi
Description: MOSFET 2N-CH 20V 600MA SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 446mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-563F
Description: MOSFET 2N-CH 20V 600MA SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 446mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-563F
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Мінімальне замовлення: 3000 шт
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| FDY300NZ |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 600MA SC89-3
Description: MOSFET N-CH 20V 600MA SC89-3
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| FDY301NZ |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 200MA SC89-3
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Last Time Buy
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Description: MOSFET N-CH 20V 200MA SC89-3
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Last Time Buy
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.00 грн |
| FFA60UP30DNTU |
|
Виробник: onsemi
Description: DIODE ARRAY GP 300V 30A TO-3P
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3P
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: DIODE ARRAY GP 300V 30A TO-3P
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3P
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| FFB20UP20STM |
|
Виробник: onsemi
Description: DIODE STANDARD 200V 20A TO263
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Last Time Buy
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 200V 20A TO263
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Last Time Buy
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| FFP08H60STU |
|
Виробник: onsemi
Description: DIODE GEN PURP 600V 8A TO220-2L
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE GEN PURP 600V 8A TO220-2L
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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| FFPF30UP20STU |
|
Виробник: onsemi
Description: DIODE AVAL 200V 30A TO220F2L
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 30A
Technology: Avalanche
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE AVAL 200V 30A TO220F2L
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 30A
Technology: Avalanche
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| FOD3180S |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
на замовлення 5696 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 210.91 грн |
| 50+ | 123.74 грн |
| 100+ | 115.70 грн |
| 500+ | 95.17 грн |
| 1000+ | 90.81 грн |
| 2000+ | 87.11 грн |
| 5000+ | 81.73 грн |
| FOD3180SDV |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL, VDE
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL, VDE
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FOD420SD |
|
Виробник: onsemi
Description: OPTOISOLATOR 5KV TRIAC 6DIP SMD
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 600 V
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 2mA
Static dV/dt (Min): 10kV/µs
Zero Crossing Circuit: No
Supplier Device Package: 6-SMD
Turn On Time: 60µs
Current - Hold (Ih): 500µA
Approval Agency: cUL, FIMKO, UL
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.28V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISOLATOR 5KV TRIAC 6DIP SMD
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 600 V
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 2mA
Static dV/dt (Min): 10kV/µs
Zero Crossing Circuit: No
Supplier Device Package: 6-SMD
Turn On Time: 60µs
Current - Hold (Ih): 500µA
Approval Agency: cUL, FIMKO, UL
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.28V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 165.73 грн |
| 2000+ | 153.69 грн |
| 3000+ | 150.67 грн |
| FOD420TV |
|
Виробник: onsemi
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.28V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Triac
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 600 V
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 2mA
Static dV/dt (Min): 10kV/µs
Zero Crossing Circuit: No
Supplier Device Package: 6-DIP
Turn On Time: 60µs
Current - Hold (Ih): 500µA
Approval Agency: cUL, FIMKO, UL, VDE
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.28V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Triac
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 600 V
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 2mA
Static dV/dt (Min): 10kV/µs
Zero Crossing Circuit: No
Supplier Device Package: 6-DIP
Turn On Time: 60µs
Current - Hold (Ih): 500µA
Approval Agency: cUL, FIMKO, UL, VDE
товару немає в наявності
В кошику
од. на суму грн.
| FODM121 |
|
Виробник: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
на замовлення 125122 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.65 грн |
| 10+ | 31.87 грн |
| 100+ | 21.06 грн |
| 500+ | 15.80 грн |
| 1000+ | 14.58 грн |
| 2000+ | 13.59 грн |
| 5000+ | 12.33 грн |
| 10000+ | 11.72 грн |
| 25000+ | 11.07 грн |
| FODM124 |
|
Виробник: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Current - DC Forward (If) (Max): 50 mA
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Current - DC Forward (If) (Max): 50 mA
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
на замовлення 462 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.19 грн |
| 10+ | 32.17 грн |
| 100+ | 21.30 грн |
| FODM2705 |
|
Виробник: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
на замовлення 8481 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.50 грн |
| 10+ | 33.58 грн |
| 100+ | 22.21 грн |
| 500+ | 16.68 грн |
| 1000+ | 15.41 грн |
| 2000+ | 14.36 грн |
| 5000+ | 13.04 грн |
| FODM3063R2 |
|
Виробник: onsemi
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 600V/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUL, UL
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 600V/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUL, UL
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 60.55 грн |
| 5000+ | 56.04 грн |
| 7500+ | 54.88 грн |
| FQB9N50CFTM_WS |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 173W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 173W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FQN1N50CTA |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 380MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: MOSFET N-CH 500V 380MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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В кошику
од. на суму грн.
| FQT1N60CTF-WS |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 200MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 200MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
на замовлення 9989 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 17.41 грн |
| 8000+ | 16.11 грн |
| FSBB15CH60C |
|
Виробник: onsemi
Description: IGBT IPM 600V 15A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
Description: IGBT IPM 600V 15A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
товару немає в наявності
Мінімальне замовлення: 60 шт
В кошику
од. на суму грн.
| FSDM1265RBWDTU |
|
Виробник: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Power (Watts): 110 W
Part Status: Obsolete
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-220F-6L (Forming)
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 66kHz
Duty Cycle: 82%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-6 Full Pack, Formed Leads
Packaging: Tube
Description: IC OFFLINE SW FLBACK TO220F-6L
Power (Watts): 110 W
Part Status: Obsolete
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-220F-6L (Forming)
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 66kHz
Duty Cycle: 82%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-6 Full Pack, Formed Leads
Packaging: Tube
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В кошику
од. на суму грн.
| ISL9V5045S3ST |
|
Виробник: onsemi
Description: IGBT 480V 51A TO263AB
Power - Max: 300 W
Voltage - Collector Emitter Breakdown (Max): 480 V
Current - Collector (Ic) (Max): 51 A
Part Status: Obsolete
Gate Charge: 32 nC
Test Condition: 300V, 1kOhm, 5V
Td (on/off) @ 25°C: -/10.8µs
Supplier Device Package: D²PAK (TO-263)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Input Type: Logic
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: IGBT 480V 51A TO263AB
Power - Max: 300 W
Voltage - Collector Emitter Breakdown (Max): 480 V
Current - Collector (Ic) (Max): 51 A
Part Status: Obsolete
Gate Charge: 32 nC
Test Condition: 300V, 1kOhm, 5V
Td (on/off) @ 25°C: -/10.8µs
Supplier Device Package: D²PAK (TO-263)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Input Type: Logic
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| LM7809ACT |
|
Виробник: onsemi
Description: IC REG LINEAR 9V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 9V
Part Status: Obsolete
PSRR: 71dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 9V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 9V
Part Status: Obsolete
PSRR: 71dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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В кошику
од. на суму грн.
| LM7812ACT |
|
Виробник: onsemi
Description: IC REG LINEAR 12V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
PSRR: 71dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 12V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
PSRR: 71dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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В кошику
од. на суму грн.
| LM7815ACT |
|
Виробник: onsemi
Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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В кошику
од. на суму грн.
| LM7824CT |
|
Виробник: onsemi
Description: IC REG LINEAR 24V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 24V
Part Status: Obsolete
PSRR: 67dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 24V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 24V
Part Status: Obsolete
PSRR: 67dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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В кошику
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| MOC8050SR2VM |
|
Виробник: onsemi
Description: OPTOISOLTR 4.17KV 1CH DARL 6-SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 8.5µs, 95µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV 1CH DARL 6-SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 8.5µs, 95µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
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| 4N33SR2M |
|
Виробник: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOISO 4.17KV DARL W/BASE 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| FAN7362MX |
|
Виробник: onsemi
Description: IC GATE DRVR HIGH-SIDE 8SOP
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 70ns, 30ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC GATE DRVR HIGH-SIDE 8SOP
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 70ns, 30ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.
| FAN73832MX |
|
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 15V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.9V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 15V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.9V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 388 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.21 грн |
| 10+ | 60.11 грн |
| 25+ | 54.41 грн |
| 100+ | 45.16 грн |
| 250+ | 42.35 грн |
| FAN7529MX |
|
Виробник: onsemi
Description: IC PFC CTRLR CRM/TRANSITION 8SOP
Current - Startup: 40 µA
Part Status: Not For New Designs
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Voltage - Supply: 12V ~ 22V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC PFC CTRLR CRM/TRANSITION 8SOP
Current - Startup: 40 µA
Part Status: Not For New Designs
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Voltage - Supply: 12V ~ 22V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 2996 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.70 грн |
| 10+ | 73.90 грн |
| 25+ | 61.91 грн |
| 100+ | 45.38 грн |
| 250+ | 39.14 грн |
| 500+ | 35.29 грн |
| 1000+ | 31.55 грн |
| FDB33N25TM |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
Description: MOSFET N-CH 250V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
на замовлення 13928 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 227.07 грн |
| 10+ | 142.09 грн |
| 100+ | 98.48 грн |
| FDB5800 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 14A/80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6625 pF @ 15 V
Description: MOSFET N-CH 60V 14A/80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6625 pF @ 15 V
на замовлення 4355 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 261.71 грн |
| 10+ | 165.44 грн |
| 100+ | 116.33 грн |
| FDB8444 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 70A TO263AB
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 8035 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 40V 70A TO263AB
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 8035 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 271 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 157.02 грн |
| 10+ | 125.86 грн |
| 100+ | 100.16 грн |
| FDB8860 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 80A TO263AB
Description: MOSFET N-CH 30V 80A TO263AB
товару немає в наявності
В кошику
од. на суму грн.
| FDC658AP |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 4A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 15 V
Description: MOSFET P-CH 30V 4A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 15 V
на замовлення 32929 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.89 грн |
| 10+ | 38.17 грн |
| 100+ | 24.80 грн |
| 500+ | 17.85 грн |
| 1000+ | 16.10 грн |
| FDD6637 |
|
Виробник: onsemi
Description: MOSFET P-CH 35V 13A/55A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 20 V
Description: MOSFET P-CH 35V 13A/55A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 20 V
на замовлення 2959 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 154.72 грн |
| 10+ | 94.95 грн |
| 100+ | 64.43 грн |
| 500+ | 48.20 грн |
| 1000+ | 44.26 грн |
| FDD8444 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 145A TO252AA
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 153W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
Description: MOSFET N-CH 40V 145A TO252AA
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 153W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
на замовлення 5238 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.01 грн |
| 10+ | 82.20 грн |
| 100+ | 55.56 грн |
| 500+ | 41.44 грн |
| 1000+ | 39.02 грн |
| FDD8445 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 70A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 70A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2305 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.35 грн |
| 10+ | 43.44 грн |
| 100+ | 36.16 грн |
| 500+ | 26.50 грн |
| 1000+ | 24.11 грн |
| FDMA420NZ |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 5.7A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 5.7A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 6250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.11 грн |
| 10+ | 35.13 грн |
| 100+ | 24.04 грн |
| 500+ | 18.49 грн |
| 1000+ | 16.71 грн |
| FDMA430NZ |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 5A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 5A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.97 грн |
| 10+ | 40.25 грн |
| 100+ | 26.26 грн |
| 500+ | 19.00 грн |
| 1000+ | 17.18 грн |
| FDMB3800N |
|
Виробник: onsemi
Description: MOSFET 2N-CH 30V 8MLP MICROFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 750mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP, MicroFET (3x1.9)
Part Status: Active
Description: MOSFET 2N-CH 30V 8MLP MICROFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 750mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP, MicroFET (3x1.9)
Part Status: Active
на замовлення 10662 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.30 грн |
| 10+ | 60.41 грн |
| 100+ | 40.23 грн |
| 500+ | 29.62 грн |
| 1000+ | 27.00 грн |
| FDS4897C |
|
Виробник: onsemi
Description: MOSFET N/P-CH 40V 6.2A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A
Drain to Source Voltage (Vdss): 40V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 40V 6.2A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A
Drain to Source Voltage (Vdss): 40V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| FDS5692Z |
|
Виробник: onsemi
Description: MOSFET N-CH 50V 5.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 50V 5.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.