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QSD2030FA4A0 onsemi qsd2030f-d.pdf Description: SENSOR PHOTODIODE 880NM RADIAL
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Dark (Typ): 10nA
Active Area: 1.55mm²
Spectral Range: 700nm ~ 1100nm
Viewing Angle: 40°
Response Time: 5ns
Operating Temperature: -40°C ~ 100°C
Diode Type: Pin
Mounting Type: Through Hole
Wavelength: 880nm
Package / Case: Radial, 5mm Dia (T 1 3/4)
Packaging: Tape & Reel (TR)
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QSD2030FA4R0 onsemi qsd2030f-d.pdf Description: SENSOR PHOTODIODE 880NM RADIAL
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Dark (Typ): 10nA
Active Area: 1.55mm²
Spectral Range: 700nm ~ 1100nm
Viewing Angle: 40°
Response Time: 5ns
Operating Temperature: -40°C ~ 100°C
Diode Type: Pin
Mounting Type: Through Hole
Wavelength: 880nm
Package / Case: Radial, 5mm Dia (T 1 3/4)
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 1200 шт
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QTLP610CPDTR QTLP610CPDTR onsemi qtlp610cpd-d.pdf Description: SENSOR PHOTO 860NM SIDE VIEW SMD
Power - Max: 75 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 µA
Current - Dark (Id) (Max): 100 nA
Viewing Angle: 160°
Operating Temperature: -25°C ~ 85°C
Orientation: Side View
Mounting Type: Surface Mount
Wavelength: 860nm
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
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 Мінімальне замовлення: 2000 шт
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RB751S40 RB751S40 onsemi RB751S40_Overview.pdf Description: DIODE SCHOTTKY 30V 30MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
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RURD620CCS9A RURD620CCS9A onsemi rurd620ccs-f085-d.pdf Description: DIODE ARRAY GP 200V 6A DPAK
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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SG6516DZ SG6516DZ onsemi SG6516.pdf Description: IC SUPERVISOR 4 CHANNEL 16DIP
DigiKey Programmable: Not Verified
Supplier Device Package: 16-PDIP
Voltage - Threshold: 3.3V, 5V, 12V, 12V
Number of Voltages Monitored: 4
Operating Temperature: -40°C ~ 85°C (TA)
Type: Multi-Voltage Supervisor
Output: Open Drain or Open Collector
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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SG6901ASZ SG6901ASZ onsemi Description: IC PFC CTR AV CURR 65KHZ 20SOIC
Current - Startup: 10 µA
Supplier Device Package: 20-SOIC
Mode: Average Current
Frequency - Switching: 65kHz
Voltage - Supply: 12V ~ 20V
Operating Temperature: -30°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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TIS75_D75Z TIS75_D75Z onsemi Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA
Resistance - RDS(On): 60 Ohms
Power - Max: 350 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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 Мінімальне замовлення: 2000 шт
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TIS75_J35Z TIS75_J35Z onsemi Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA
Resistance - RDS(On): 60 Ohms
Power - Max: 350 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
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 Мінімальне замовлення: 2000 шт
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TN2219A_D26Z TN2219A_D26Z onsemi TN2219A.pdf Description: TRANS NPN 40V 1A TO226
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
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TN2219A_J05Z TN2219A_J05Z onsemi TN2219A.pdf Description: TRANS NPN 40V 1A TO92-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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TN2907A_D26Z TN2907A_D26Z onsemi Description: TRANS PNP 60V 0.8A TO-226
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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TN4033A_D26Z TN4033A_D26Z onsemi TN4033A.pdf Description: TRANS PNP 80V 1A TO226
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
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TN6714A_D26Z TN6714A_D26Z onsemi tn6714a-d.pdf Description: TRANS NPN 30V 2A TO226
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
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TN6725A_D26Z TN6725A_D26Z onsemi TN6725A.pdf Description: TRANS NPN DARL 50V 1.2A TO226
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TN6725A_D27Z TN6725A_D27Z onsemi TN6725A.pdf Description: TRANS NPN DARL 50V 1.2A TO226
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TN6725A_D74Z TN6725A_D74Z onsemi TN6725A.pdf Description: TRANS NPN DARL 50V 1.2A TO226
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 1.2 A
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Box (TB)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
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TN6725A_D75Z TN6725A_D75Z onsemi TN6725A.pdf Description: TRANS NPN DARL 50V 1.2A TO226
Current - Collector (Ic) (Max): 1.2 A
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Box (TB)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
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TN6726A_D26Z TN6726A_D26Z onsemi NZT6726.pdf Description: TRANS PNP 30V 1.5A TO226
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Obsolete
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
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U1898_D27Z U1898_D27Z onsemi U1898_DS.pdf Description: JFET N-CH 40V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Resistance - RDS(On): 50 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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ZTX749A_J05Z ZTX749A_J05Z onsemi ZTX749A.pdf Description: TRANS PNP 35V 2A TO92-3
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ZTX749A_J61Z ZTX749A_J61Z onsemi ZTX749A.pdf Description: TRANS PNP 35V 2A TO92-3
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ZTX749_D27Z ZTX749_D27Z onsemi ZTX749.pdf Description: TRANS PNP 25V 2A TO226
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ZTX749_J61Z ZTX749_J61Z onsemi ZTX749.pdf Description: TRANS PNP 25V 2A TO92-3
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FDP3205 FDP3205 onsemi FDP3205.pdf Description: MOSFET N-CH 55V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 7730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 59A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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FDP150N10 FDP150N10 onsemi fdp150n10-d.pdf Description: MOSFET N-CH 100V 57A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 49A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
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FSBB20CH60L FSBB20CH60L onsemi FSBB20CH60L.pdf Description: IGBT IPM 600V 20A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
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 Мінімальне замовлення: 60 шт
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FSBF15CH60BTL FSBF15CH60BTL onsemi FSBF15CH60BTL_DS.pdf Description: MODULE SPM 600V 15A SPM27-JB
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
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FQPF6N90CT FQPF6N90CT onsemi fqpf6n90c-d.pdf Description: MOSFET N-CH 900V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 3A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
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FQPF9N90CT FQPF9N90CT onsemi FQPF9N90C-D.PDF Description: MOSFET N-CH 900V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
на замовлення 1164 шт:
термін постачання 21-31 дні (днів)
1+361.91 грн
50+182.32 грн
100+166.21 грн
500+129.50 грн
1000+122.53 грн
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FDMA410NZ FDMA410NZ onsemi fdma410nz-d.pdf Description: MOSFET N-CH 20V 9.5A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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FDY1002PZ FDY1002PZ onsemi FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2P-CH 20V 0.83A SOT563F
Part Status: Active
Supplier Device Package: SOT-563F
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 830mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 446mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+12.89 грн
6000+11.84 грн
9000+11.32 грн
15000+10.57 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDY102PZ FDY102PZ onsemi FAIR-S-A0000083184-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 20V 830MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
3000+7.77 грн
6000+6.80 грн
9000+6.44 грн
15000+5.68 грн
21000+5.46 грн
30000+5.24 грн
Мінімальне замовлення: 3000 шт
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FDY6342L FDY6342L onsemi Description: IC PWR SWITCH P-CHAN 1:1 SOT563F
Part Status: Obsolete
Supplier Device Package: SOT-563F
Ratio - Input:Output: 1:1
Current - Output (Max): 830mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.5V ~ 8V
Input Type: Non-Inverting
Rds On (Typ): 280mOhm
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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FGH20N60SFDTU FGH20N60SFDTU onsemi fgh20n60sfdtu-f085-d.pdf Description: IGBT FIELD STOP 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 13ns/90ns
Switching Energy: 370µJ (on), 160µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 165 W
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FGH20N60UFDTU FGH20N60UFDTU onsemi fgh20n60ufd-d.pdf Description: IGBT FIELD STOP 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 13ns/87ns
Switching Energy: 380µJ (on), 260µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 165 W
товару немає в наявності
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FDMA410NZ FDMA410NZ onsemi fdma410nz-d.pdf Description: MOSFET N-CH 20V 9.5A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
FDY1002PZ FDY1002PZ onsemi FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2P-CH 20V 0.83A SOT563F
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 830mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 446mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-563F
на замовлення 17622 шт:
термін постачання 21-31 дні (днів)
6+60.58 грн
10+36.42 грн
100+23.49 грн
500+16.84 грн
1000+15.20 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
FDY102PZ FDY102PZ onsemi FAIR-S-A0000083184-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 20V 830MA SC89-3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
на замовлення 34254 шт:
термін постачання 21-31 дні (днів)
9+35.73 грн
15+20.94 грн
100+13.25 грн
500+9.31 грн
1000+8.31 грн
Мінімальне замовлення: 9 шт
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FDY6342L FDY6342L onsemi Description: IC PWR SWITCH P-CHAN 1:1 SOT563F
Part Status: Obsolete
Supplier Device Package: SOT-563F
Ratio - Input:Output: 1:1
Current - Output (Max): 830mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.5V ~ 8V
Input Type: Non-Inverting
Rds On (Typ): 280mOhm
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
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MM5Z12V MM5Z12V onsemi MM5Z2V4-5Z75V.pdf Description: DIODE ZENER 12V 200MW SOD523F
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MM5Z15V MM5Z15V onsemi MM5Z2V4-5Z75V.pdf Description: DIODE ZENER 15V 200MW SOD523F
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Power - Max: 200 mW
Part Status: Obsolete
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523F
Tolerance: ±5%
Packaging: Cut Tape (CT)
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MM5Z20V MM5Z20V onsemi MM5Z2V4-5Z75V.pdf Description: DIODE ZENER 20V 200MW SOD523F
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MM5Z22V MM5Z22V onsemi MM5Z2V4-5Z75V.pdf Description: DIODE ZENER 22V 200MW SOD523F
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523F
Tolerance: ±6%
Packaging: Cut Tape (CT)
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MM5Z27V MM5Z27V onsemi MM5Z2V4-5Z75V.pdf Description: DIODE ZENER 27V 200MW SOD523F
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MM5Z2V4 MM5Z2V4 onsemi MM5Z2V4-5Z75V.pdf Description: DIODE ZENER 2.4V 200MW SOD523F
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MM5Z3V0 MM5Z3V0 onsemi MM5Z2V4-5Z75V.pdf Description: ZENER SOD523 3V 0.3W 5%
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523F
Tolerance: ±7%
Packaging: Cut Tape (CT)
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MM5Z6V2 MM5Z6V2 onsemi MM5Z2V4-5Z75V.pdf Description: DIODE ZENER 6.2V 200MW SOD523F
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523F
Tolerance: ±6%
Packaging: Cut Tape (CT)
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ADM1032ARMZ-001 ADM1032ARMZ-001 onsemi adm1032-d.pdf Description: SENSOR DIGITAL 0C-100C MICRO8
Sensing Temperature - Remote: 0°C ~ 120°C
Sensing Temperature - Local: 0°C ~ 100°C
Accuracy - Highest (Lowest): ±3°C
Test Condition: 0°C ~ 100°C
Supplier Device Package: 8-MSOP
Resolution: 7 b
Sensor Type: Digital, Local/Remote
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: 0°C ~ 120°C
Mounting Type: Surface Mount
Output Type: SMBus
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: Output Switch, Programmable Limit, Standby Mode
Packaging: Tube
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ADM1032ARMZ-002 ADM1032ARMZ-002 onsemi adm1032-d.pdf Description: SENSOR DIGITAL 0C-100C MICRO8
Operating Temperature: 0°C ~ 120°C
Mounting Type: Surface Mount
Output Type: SMBus
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: Output Switch, Programmable Limit, Standby Mode
Packaging: Tube
Sensing Temperature - Remote: 0°C ~ 120°C
Sensing Temperature - Local: 0°C ~ 100°C
Accuracy - Highest (Lowest): ±3°C
Test Condition: 0°C ~ 100°C
Supplier Device Package: 8-MSOP
Resolution: 7 b
Sensor Type: Digital, Local/Remote
Voltage - Supply: 3V ~ 5.5V
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ADP3121JCPZ-RL ADP3121JCPZ-RL onsemi adp3121-d.pdf Description: IC GATE DRVR HALF-BRIDGE 8LFCSP
DigiKey Programmable: Not Verified
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 20ns, 20ns
Supplier Device Package: 8-LFCSP (3x3)
High Side Voltage - Max (Bootstrap): 35 V
Input Type: Non-Inverting
Voltage - Supply: 4.15V ~ 13.2V
Operating Temperature: 0°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad, CSP
Packaging: Tape & Reel (TR)
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ADP3121JRZ-RL ADP3121JRZ-RL onsemi adp3121-d.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 20ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 35 V
Input Type: Non-Inverting
Voltage - Supply: 4.15V ~ 13.2V
Operating Temperature: 0°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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ADP3293JCPZ-RL ADP3293JCPZ-RL onsemi adp3293-d.pdf Description: IC REG CTRLR INTEL 3OUT 40LFCSP
Supplier Device Package: 40-LFCSP (6x6)
Applications: Controller, Intel Processor
Operating Temperature: 0°C ~ 85°C
Voltage - Input: 6V ~ 14.5V
Number of Outputs: 3
Mounting Type: Surface Mount
Voltage - Output: 0.5V ~ 1.6V
Package / Case: 40-VFQFN Exposed Pad, CSP
Packaging: Tape & Reel (TR)
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ADP4100JCPZ-REEL ADP4100JCPZ-REEL onsemi adp4100-d.pdf Description: IC REG CONV VR11 6OUT 48LFCSP
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad, CSP
Voltage - Output: 0.38V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 4.7V ~ 5.75V
Operating Temperature: 0°C ~ 85°C
Applications: Converter, Intel VR11, VR11.1
Supplier Device Package: 48-LFCSP (7x7)
Part Status: Obsolete
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ADP4100JCPZ-RL7 ADP4100JCPZ-RL7 onsemi adp4100-d.pdf Description: IC REG CONV VR11 6OUT 48LFCSP
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad, CSP
Voltage - Output: 0.38V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 4.7V ~ 5.75V
Operating Temperature: 0°C ~ 85°C
Applications: Converter, Intel VR11, VR11.1
Supplier Device Package: 48-LFCSP (7x7)
Part Status: Obsolete
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ADT7461AARMZ-002 ADT7461AARMZ-002 onsemi ADT7461A_Rev5%282009%29.pdf Description: SENSOR DIGITAL -40C-120C MICRO8
Sensing Temperature - Remote: -64°C ~ 191°C
Sensing Temperature - Local: -40°C ~ 120°C
Accuracy - Highest (Lowest): ±1°C (±2.5°C)
Test Condition: 0°C ~ 70°C (-40°C ~ 100°C)
Supplier Device Package: 8-MSOP
Resolution: 8 b
Sensor Type: Digital, Local/Remote
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 120°C
Mounting Type: Surface Mount
Output Type: SMBus
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Packaging: Tube
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ADT7461ARMZ-002 ADT7461ARMZ-002 onsemi adt7461-d.pdf Description: SENSOR DIGITAL -40C-120C MICRO8
Sensing Temperature - Remote: -55°C ~ 150°C
Sensing Temperature - Local: -40°C ~ 120°C
Accuracy - Highest (Lowest): ±3°C
Test Condition: -40°C ~ 100°C
Supplier Device Package: 8-MSOP
Resolution: 8 b
Sensor Type: Digital, Local/Remote
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 120°C
Mounting Type: Surface Mount
Output Type: SMBus
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Packaging: Tube
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ESD9L3.3ST5G ESD9L3.3ST5G onsemi ESD9L-D.PDF Description: TVS DIODE 3.3VWM 9VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Voltage - Clamping (Max) @ Ipp: 9V
Power Line Protection: No
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
8000+3.72 грн
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
ESD9R3.3ST5G ESD9R3.3ST5G onsemi esd9r3.3s-d.pdf Description: TVS DIODE 3.3VWM 7.8VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Voltage - Clamping (Max) @ Ipp: 7.8V
Power Line Protection: No
Part Status: Active
на замовлення 121325 шт:
термін постачання 21-31 дні (днів)
8000+15.30 грн
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
ESD9X7.0ST5G ESD9X7.0ST5G onsemi esd9x3.3st5g-d.pdf Description: TVS DIODE 7VWM 25VC SOD923
Power Line Protection: No
Power - Peak Pulse: 100W
Voltage - Clamping (Max) @ Ipp: 25V
Voltage - Breakdown (Min): 7.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-923
Voltage - Reverse Standoff (Typ): 7V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 65pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-923
Packaging: Tape & Reel (TR)
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)
8000+1.51 грн
Мінімальне замовлення: 8000 шт
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QSD2030FA4A0 qsd2030f-d.pdf
Виробник: onsemi
Description: SENSOR PHOTODIODE 880NM RADIAL
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Dark (Typ): 10nA
Active Area: 1.55mm²
Spectral Range: 700nm ~ 1100nm
Viewing Angle: 40°
Response Time: 5ns
Operating Temperature: -40°C ~ 100°C
Diode Type: Pin
Mounting Type: Through Hole
Wavelength: 880nm
Package / Case: Radial, 5mm Dia (T 1 3/4)
Packaging: Tape & Reel (TR)
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QSD2030FA4R0 qsd2030f-d.pdf
Виробник: onsemi
Description: SENSOR PHOTODIODE 880NM RADIAL
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Dark (Typ): 10nA
Active Area: 1.55mm²
Spectral Range: 700nm ~ 1100nm
Viewing Angle: 40°
Response Time: 5ns
Operating Temperature: -40°C ~ 100°C
Diode Type: Pin
Mounting Type: Through Hole
Wavelength: 880nm
Package / Case: Radial, 5mm Dia (T 1 3/4)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1200 шт
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QTLP610CPDTR qtlp610cpd-d.pdf
QTLP610CPDTR
Виробник: onsemi
Description: SENSOR PHOTO 860NM SIDE VIEW SMD
Power - Max: 75 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 µA
Current - Dark (Id) (Max): 100 nA
Viewing Angle: 160°
Operating Temperature: -25°C ~ 85°C
Orientation: Side View
Mounting Type: Surface Mount
Wavelength: 860nm
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
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RB751S40 RB751S40_Overview.pdf
RB751S40
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 30MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
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RURD620CCS9A rurd620ccs-f085-d.pdf
RURD620CCS9A
Виробник: onsemi
Description: DIODE ARRAY GP 200V 6A DPAK
товару немає в наявності
Мінімальне замовлення: 2500 шт
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SG6516DZ SG6516.pdf
SG6516DZ
Виробник: onsemi
Description: IC SUPERVISOR 4 CHANNEL 16DIP
DigiKey Programmable: Not Verified
Supplier Device Package: 16-PDIP
Voltage - Threshold: 3.3V, 5V, 12V, 12V
Number of Voltages Monitored: 4
Operating Temperature: -40°C ~ 85°C (TA)
Type: Multi-Voltage Supervisor
Output: Open Drain or Open Collector
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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SG6901ASZ
SG6901ASZ
Виробник: onsemi
Description: IC PFC CTR AV CURR 65KHZ 20SOIC
Current - Startup: 10 µA
Supplier Device Package: 20-SOIC
Mode: Average Current
Frequency - Switching: 65kHz
Voltage - Supply: 12V ~ 20V
Operating Temperature: -30°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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TIS75_D75Z
TIS75_D75Z
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA
Resistance - RDS(On): 60 Ohms
Power - Max: 350 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 2000 шт
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TIS75_J35Z
TIS75_J35Z
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA
Resistance - RDS(On): 60 Ohms
Power - Max: 350 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 2000 шт
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TN2219A_D26Z TN2219A.pdf
TN2219A_D26Z
Виробник: onsemi
Description: TRANS NPN 40V 1A TO226
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
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TN2219A_J05Z TN2219A.pdf
TN2219A_J05Z
Виробник: onsemi
Description: TRANS NPN 40V 1A TO92-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 1000 шт
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TN2907A_D26Z
TN2907A_D26Z
Виробник: onsemi
Description: TRANS PNP 60V 0.8A TO-226
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
товару немає в наявності
Мінімальне замовлення: 2000 шт
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TN4033A_D26Z TN4033A.pdf
TN4033A_D26Z
Виробник: onsemi
Description: TRANS PNP 80V 1A TO226
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
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TN6714A_D26Z tn6714a-d.pdf
TN6714A_D26Z
Виробник: onsemi
Description: TRANS NPN 30V 2A TO226
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
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TN6725A_D26Z TN6725A.pdf
TN6725A_D26Z
Виробник: onsemi
Description: TRANS NPN DARL 50V 1.2A TO226
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TN6725A_D27Z TN6725A.pdf
TN6725A_D27Z
Виробник: onsemi
Description: TRANS NPN DARL 50V 1.2A TO226
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TN6725A_D74Z TN6725A.pdf
TN6725A_D74Z
Виробник: onsemi
Description: TRANS NPN DARL 50V 1.2A TO226
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 1.2 A
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Box (TB)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
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TN6725A_D75Z TN6725A.pdf
TN6725A_D75Z
Виробник: onsemi
Description: TRANS NPN DARL 50V 1.2A TO226
Current - Collector (Ic) (Max): 1.2 A
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Box (TB)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
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TN6726A_D26Z NZT6726.pdf
TN6726A_D26Z
Виробник: onsemi
Description: TRANS PNP 30V 1.5A TO226
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Obsolete
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
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U1898_D27Z U1898_DS.pdf
U1898_D27Z
Виробник: onsemi
Description: JFET N-CH 40V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Resistance - RDS(On): 50 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
ZTX749A_J05Z ZTX749A.pdf
ZTX749A_J05Z
Виробник: onsemi
Description: TRANS PNP 35V 2A TO92-3
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ZTX749A_J61Z ZTX749A.pdf
ZTX749A_J61Z
Виробник: onsemi
Description: TRANS PNP 35V 2A TO92-3
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ZTX749_D27Z ZTX749.pdf
ZTX749_D27Z
Виробник: onsemi
Description: TRANS PNP 25V 2A TO226
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ZTX749_J61Z ZTX749.pdf
ZTX749_J61Z
Виробник: onsemi
Description: TRANS PNP 25V 2A TO92-3
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FDP3205 FDP3205.pdf
FDP3205
Виробник: onsemi
Description: MOSFET N-CH 55V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 7730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 59A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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FDP150N10 fdp150n10-d.pdf
FDP150N10
Виробник: onsemi
Description: MOSFET N-CH 100V 57A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 49A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
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FSBB20CH60L FSBB20CH60L.pdf
FSBB20CH60L
Виробник: onsemi
Description: IGBT IPM 600V 20A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
товару немає в наявності
Мінімальне замовлення: 60 шт
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FSBF15CH60BTL FSBF15CH60BTL_DS.pdf
FSBF15CH60BTL
Виробник: onsemi
Description: MODULE SPM 600V 15A SPM27-JB
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
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FQPF6N90CT fqpf6n90c-d.pdf
FQPF6N90CT
Виробник: onsemi
Description: MOSFET N-CH 900V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 3A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
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FQPF9N90CT FQPF9N90C-D.PDF
FQPF9N90CT
Виробник: onsemi
Description: MOSFET N-CH 900V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
на замовлення 1164 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+361.91 грн
50+182.32 грн
100+166.21 грн
500+129.50 грн
1000+122.53 грн
В кошику  од. на суму  грн.
FDMA410NZ fdma410nz-d.pdf
FDMA410NZ
Виробник: onsemi
Description: MOSFET N-CH 20V 9.5A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDY1002PZ FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw
FDY1002PZ
Виробник: onsemi
Description: MOSFET 2P-CH 20V 0.83A SOT563F
Part Status: Active
Supplier Device Package: SOT-563F
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 830mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 446mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+12.89 грн
6000+11.84 грн
9000+11.32 грн
15000+10.57 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDY102PZ FAIR-S-A0000083184-1.pdf?t.download=true&u=5oefqw
FDY102PZ
Виробник: onsemi
Description: MOSFET P-CH 20V 830MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+7.77 грн
6000+6.80 грн
9000+6.44 грн
15000+5.68 грн
21000+5.46 грн
30000+5.24 грн
Мінімальне замовлення: 3000 шт
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FDY6342L
FDY6342L
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SOT563F
Part Status: Obsolete
Supplier Device Package: SOT-563F
Ratio - Input:Output: 1:1
Current - Output (Max): 830mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.5V ~ 8V
Input Type: Non-Inverting
Rds On (Typ): 280mOhm
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FGH20N60SFDTU fgh20n60sfdtu-f085-d.pdf
FGH20N60SFDTU
Виробник: onsemi
Description: IGBT FIELD STOP 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 13ns/90ns
Switching Energy: 370µJ (on), 160µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 165 W
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FGH20N60UFDTU fgh20n60ufd-d.pdf
FGH20N60UFDTU
Виробник: onsemi
Description: IGBT FIELD STOP 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 13ns/87ns
Switching Energy: 380µJ (on), 260µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 165 W
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FDMA410NZ fdma410nz-d.pdf
FDMA410NZ
Виробник: onsemi
Description: MOSFET N-CH 20V 9.5A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
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FDY1002PZ FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw
FDY1002PZ
Виробник: onsemi
Description: MOSFET 2P-CH 20V 0.83A SOT563F
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 830mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 446mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-563F
на замовлення 17622 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
6+60.58 грн
10+36.42 грн
100+23.49 грн
500+16.84 грн
1000+15.20 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
FDY102PZ FAIR-S-A0000083184-1.pdf?t.download=true&u=5oefqw
FDY102PZ
Виробник: onsemi
Description: MOSFET P-CH 20V 830MA SC89-3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
на замовлення 34254 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
9+35.73 грн
15+20.94 грн
100+13.25 грн
500+9.31 грн
1000+8.31 грн
Мінімальне замовлення: 9 шт
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FDY6342L
FDY6342L
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SOT563F
Part Status: Obsolete
Supplier Device Package: SOT-563F
Ratio - Input:Output: 1:1
Current - Output (Max): 830mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.5V ~ 8V
Input Type: Non-Inverting
Rds On (Typ): 280mOhm
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
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MM5Z12V MM5Z2V4-5Z75V.pdf
MM5Z12V
Виробник: onsemi
Description: DIODE ZENER 12V 200MW SOD523F
товару немає в наявності
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MM5Z15V MM5Z2V4-5Z75V.pdf
MM5Z15V
Виробник: onsemi
Description: DIODE ZENER 15V 200MW SOD523F
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Power - Max: 200 mW
Part Status: Obsolete
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523F
Tolerance: ±5%
Packaging: Cut Tape (CT)
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MM5Z20V MM5Z2V4-5Z75V.pdf
MM5Z20V
Виробник: onsemi
Description: DIODE ZENER 20V 200MW SOD523F
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MM5Z22V MM5Z2V4-5Z75V.pdf
MM5Z22V
Виробник: onsemi
Description: DIODE ZENER 22V 200MW SOD523F
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523F
Tolerance: ±6%
Packaging: Cut Tape (CT)
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MM5Z27V MM5Z2V4-5Z75V.pdf
MM5Z27V
Виробник: onsemi
Description: DIODE ZENER 27V 200MW SOD523F
товару немає в наявності
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MM5Z2V4 MM5Z2V4-5Z75V.pdf
MM5Z2V4
Виробник: onsemi
Description: DIODE ZENER 2.4V 200MW SOD523F
товару немає в наявності
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MM5Z3V0 MM5Z2V4-5Z75V.pdf
MM5Z3V0
Виробник: onsemi
Description: ZENER SOD523 3V 0.3W 5%
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523F
Tolerance: ±7%
Packaging: Cut Tape (CT)
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MM5Z6V2 MM5Z2V4-5Z75V.pdf
MM5Z6V2
Виробник: onsemi
Description: DIODE ZENER 6.2V 200MW SOD523F
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523F
Tolerance: ±6%
Packaging: Cut Tape (CT)
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ADM1032ARMZ-001 adm1032-d.pdf
ADM1032ARMZ-001
Виробник: onsemi
Description: SENSOR DIGITAL 0C-100C MICRO8
Sensing Temperature - Remote: 0°C ~ 120°C
Sensing Temperature - Local: 0°C ~ 100°C
Accuracy - Highest (Lowest): ±3°C
Test Condition: 0°C ~ 100°C
Supplier Device Package: 8-MSOP
Resolution: 7 b
Sensor Type: Digital, Local/Remote
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: 0°C ~ 120°C
Mounting Type: Surface Mount
Output Type: SMBus
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: Output Switch, Programmable Limit, Standby Mode
Packaging: Tube
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ADM1032ARMZ-002 adm1032-d.pdf
ADM1032ARMZ-002
Виробник: onsemi
Description: SENSOR DIGITAL 0C-100C MICRO8
Operating Temperature: 0°C ~ 120°C
Mounting Type: Surface Mount
Output Type: SMBus
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: Output Switch, Programmable Limit, Standby Mode
Packaging: Tube
Sensing Temperature - Remote: 0°C ~ 120°C
Sensing Temperature - Local: 0°C ~ 100°C
Accuracy - Highest (Lowest): ±3°C
Test Condition: 0°C ~ 100°C
Supplier Device Package: 8-MSOP
Resolution: 7 b
Sensor Type: Digital, Local/Remote
Voltage - Supply: 3V ~ 5.5V
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ADP3121JCPZ-RL adp3121-d.pdf
ADP3121JCPZ-RL
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8LFCSP
DigiKey Programmable: Not Verified
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 20ns, 20ns
Supplier Device Package: 8-LFCSP (3x3)
High Side Voltage - Max (Bootstrap): 35 V
Input Type: Non-Inverting
Voltage - Supply: 4.15V ~ 13.2V
Operating Temperature: 0°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad, CSP
Packaging: Tape & Reel (TR)
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ADP3121JRZ-RL adp3121-d.pdf
ADP3121JRZ-RL
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 20ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 35 V
Input Type: Non-Inverting
Voltage - Supply: 4.15V ~ 13.2V
Operating Temperature: 0°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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ADP3293JCPZ-RL adp3293-d.pdf
ADP3293JCPZ-RL
Виробник: onsemi
Description: IC REG CTRLR INTEL 3OUT 40LFCSP
Supplier Device Package: 40-LFCSP (6x6)
Applications: Controller, Intel Processor
Operating Temperature: 0°C ~ 85°C
Voltage - Input: 6V ~ 14.5V
Number of Outputs: 3
Mounting Type: Surface Mount
Voltage - Output: 0.5V ~ 1.6V
Package / Case: 40-VFQFN Exposed Pad, CSP
Packaging: Tape & Reel (TR)
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ADP4100JCPZ-REEL adp4100-d.pdf
ADP4100JCPZ-REEL
Виробник: onsemi
Description: IC REG CONV VR11 6OUT 48LFCSP
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad, CSP
Voltage - Output: 0.38V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 4.7V ~ 5.75V
Operating Temperature: 0°C ~ 85°C
Applications: Converter, Intel VR11, VR11.1
Supplier Device Package: 48-LFCSP (7x7)
Part Status: Obsolete
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ADP4100JCPZ-RL7 adp4100-d.pdf
ADP4100JCPZ-RL7
Виробник: onsemi
Description: IC REG CONV VR11 6OUT 48LFCSP
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad, CSP
Voltage - Output: 0.38V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 4.7V ~ 5.75V
Operating Temperature: 0°C ~ 85°C
Applications: Converter, Intel VR11, VR11.1
Supplier Device Package: 48-LFCSP (7x7)
Part Status: Obsolete
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ADT7461AARMZ-002 ADT7461A_Rev5%282009%29.pdf
ADT7461AARMZ-002
Виробник: onsemi
Description: SENSOR DIGITAL -40C-120C MICRO8
Sensing Temperature - Remote: -64°C ~ 191°C
Sensing Temperature - Local: -40°C ~ 120°C
Accuracy - Highest (Lowest): ±1°C (±2.5°C)
Test Condition: 0°C ~ 70°C (-40°C ~ 100°C)
Supplier Device Package: 8-MSOP
Resolution: 8 b
Sensor Type: Digital, Local/Remote
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 120°C
Mounting Type: Surface Mount
Output Type: SMBus
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Packaging: Tube
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ADT7461ARMZ-002 adt7461-d.pdf
ADT7461ARMZ-002
Виробник: onsemi
Description: SENSOR DIGITAL -40C-120C MICRO8
Sensing Temperature - Remote: -55°C ~ 150°C
Sensing Temperature - Local: -40°C ~ 120°C
Accuracy - Highest (Lowest): ±3°C
Test Condition: -40°C ~ 100°C
Supplier Device Package: 8-MSOP
Resolution: 8 b
Sensor Type: Digital, Local/Remote
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 120°C
Mounting Type: Surface Mount
Output Type: SMBus
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Packaging: Tube
товару немає в наявності
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ESD9L3.3ST5G ESD9L-D.PDF
ESD9L3.3ST5G
Виробник: onsemi
Description: TVS DIODE 3.3VWM 9VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Voltage - Clamping (Max) @ Ipp: 9V
Power Line Protection: No
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
8000+3.72 грн
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
ESD9R3.3ST5G esd9r3.3s-d.pdf
ESD9R3.3ST5G
Виробник: onsemi
Description: TVS DIODE 3.3VWM 7.8VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Voltage - Clamping (Max) @ Ipp: 7.8V
Power Line Protection: No
Part Status: Active
на замовлення 121325 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
8000+15.30 грн
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
ESD9X7.0ST5G esd9x3.3st5g-d.pdf
ESD9X7.0ST5G
Виробник: onsemi
Description: TVS DIODE 7VWM 25VC SOD923
Power Line Protection: No
Power - Peak Pulse: 100W
Voltage - Clamping (Max) @ Ipp: 25V
Voltage - Breakdown (Min): 7.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-923
Voltage - Reverse Standoff (Typ): 7V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 65pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-923
Packaging: Tape & Reel (TR)
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
8000+1.51 грн
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
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