| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PN4117A_D26Z | onsemi |
 Description: JFET N-CH 40V TO92-3Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA Power - Max: 350 mW Part Status: Obsolete Supplier Device Package: TO-92-3 Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PN4117A_J61Z | onsemi |
Description: JFET N-CH 40V TO92-3 Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA Power - Max: 350 mW Part Status: Obsolete Supplier Device Package: TO-92-3 Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PN4117_D26Z | onsemi |
Description: JFET N-CH 40V TO92-3 Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA Power - Max: 350 mW Supplier Device Package: TO-92-3 Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PN4122_D27Z | onsemi |
Description: TRANS PNP 40V 0.1A TO92-3 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: TO-92-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 1V Current - Collector Cutoff (Max): 25nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PN4250A_D27Z | onsemi |
Description: TRANS PNP 60V 0.5A TO92-3 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Current - Collector Cutoff (Max): 10nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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PN4250_D26Z | onsemi |
Description: TRANS PNP 40V 0.5A TO92-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PN4250_D27Z | onsemi |
Description: TRANS PNP 40V 0.5A TO92-3 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Current - Collector Cutoff (Max): 10nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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PN4250_D74Z | onsemi |
Description: TRANS PNP 40V 0.5A TO92-3 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Current - Collector Cutoff (Max): 10nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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PN4250_D75Z | onsemi |
Description: TRANS PNP 40V 0.5A TO92-3 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Current - Collector Cutoff (Max): 10nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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PN4391_D26Z | onsemi |
Description: JFET N-CH 30V TO92-3 Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA Resistance - RDS(On): 30 Ohms Power - Max: 625 mW Supplier Device Package: TO-92-3 Voltage - Breakdown (V(BR)GSS): 30 V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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PN4391_D27Z | onsemi |
Description: JFET N-CH 30V TO92-3 Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA Resistance - RDS(On): 30 Ohms Power - Max: 625 mW Supplier Device Package: TO-92-3 Voltage - Breakdown (V(BR)GSS): 30 V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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PN4391_D75Z | onsemi |
Description: JFET N-CH 30V TO92-3 Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA Resistance - RDS(On): 30 Ohms Power - Max: 625 mW Supplier Device Package: TO-92-3 Voltage - Breakdown (V(BR)GSS): 30 V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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PN4392_D26Z | onsemi |
Description: JFET N-CH 30V TO92-3 Packaging: Tape & Reel (TR) Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Resistance - RDS(On): 60 Ohms Power - Max: 625 mW Part Status: Obsolete Supplier Device Package: TO-92-3 Voltage - Breakdown (V(BR)GSS): 30 V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PN4392_D27Z | onsemi |
Description: JFET N-CH 30V TO92-3 FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Reel (TR) Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Resistance - RDS(On): 60 Ohms Power - Max: 625 mW Part Status: Obsolete Supplier Device Package: TO-92-3 Voltage - Breakdown (V(BR)GSS): 30 V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PN4392_D75Z | onsemi |
Description: JFET N-CH 30V TO92-3 Part Status: Obsolete Supplier Device Package: TO-92-3 Voltage - Breakdown (V(BR)GSS): 30 V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Resistance - RDS(On): 60 Ohms Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PN4393_D26Z | onsemi |
Description: JFET N-CH 30V TO92-3 Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Resistance - RDS(On): 100 Ohms Power - Max: 625 mW Supplier Device Package: TO-92-3 Voltage - Breakdown (V(BR)GSS): 30 V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PN4393_D27Z | onsemi |
Description: JFET N-CH 30V TO92-3 Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Resistance - RDS(On): 100 Ohms Power - Max: 625 mW Supplier Device Package: TO-92-3 Voltage - Breakdown (V(BR)GSS): 30 V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PN4393_D74Z | onsemi |
Description: JFET N-CH 30V TO92-3 Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Resistance - RDS(On): 100 Ohms Power - Max: 625 mW Supplier Device Package: TO-92-3 Voltage - Breakdown (V(BR)GSS): 30 V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PN4393_D75Z | onsemi |
Description: JFET N-CH 30V TO92-3 Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Resistance - RDS(On): 100 Ohms Power - Max: 625 mW Supplier Device Package: TO-92-3 Voltage - Breakdown (V(BR)GSS): 30 V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PN4416_D27Z | onsemi |
Description: RF MOSFET JFET 30V TO92-3 Voltage - Rated: 30 V Supplier Device Package: TO-92-3 Noise Figure: 4dB Technology: JFET Configuration: N-Channel Frequency: 400MHz Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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PN5179_D26Z | onsemi |
Description: RF TRANS NPN 12V 2GHZ TO92-3 Part Status: Obsolete Supplier Device Package: TO-92-3 Noise Figure (dB Typ @ f): 5dB @ 200MHz Frequency - Transition: 2GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 50mA Power - Max: 350mW Gain: 15dB Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PN5432_D27Z | onsemi |
Description: JFET N-CH 25V 0.35W TO92 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PN5434_D26Z | onsemi |
Description: JFET N-CH 25V 0.35W TO92 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PN5434_D27Z | onsemi |
Description: JFET N-CH 25V 0.35W TO92 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PN918_D74Z | onsemi |
Description: RF TRANS NPN 15V 600MHZ TO92-3 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||
| QEE323 | onsemi |
Description: EMITTER RECTANGLE FOR QRD SWITCH Packaging: Box |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||
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QSB34CZR | onsemi |
Description: SENSOR PHOTODIODE 940NM 2SMD Voltage - DC Reverse (Vr) (Max): 32 V Part Status: Active Current - Dark (Typ): 30nA Active Area: 6.5mm² Spectral Range: 400nm ~ 1100nm Viewing Angle: 120° Response Time: 50ns Operating Temperature: -25°C ~ 85°C Diode Type: Pin Mounting Type: Surface Mount Wavelength: 940nm Package / Case: 2-SMD, Z-Bend Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
| QSD2030FA4A0 | onsemi |
Description: SENSOR PHOTODIODE 880NM RADIAL Voltage - DC Reverse (Vr) (Max): 50 V Current - Dark (Typ): 10nA Active Area: 1.55mm² Spectral Range: 700nm ~ 1100nm Viewing Angle: 40° Response Time: 5ns Operating Temperature: -40°C ~ 100°C Diode Type: Pin Mounting Type: Through Hole Wavelength: 880nm Package / Case: Radial, 5mm Dia (T 1 3/4) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| QSD2030FA4R0 | onsemi |
Description: SENSOR PHOTODIODE 880NM RADIAL Voltage - DC Reverse (Vr) (Max): 50 V Current - Dark (Typ): 10nA Active Area: 1.55mm² Spectral Range: 700nm ~ 1100nm Viewing Angle: 40° Response Time: 5ns Operating Temperature: -40°C ~ 100°C Diode Type: Pin Mounting Type: Through Hole Wavelength: 880nm Package / Case: Radial, 5mm Dia (T 1 3/4) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | |||||||||||||
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QTLP610CPDTR | onsemi |
Description: SENSOR PHOTO 860NM SIDE VIEW SMD Power - Max: 75 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 500 µA Current - Dark (Id) (Max): 100 nA Viewing Angle: 160° Operating Temperature: -25°C ~ 85°C Orientation: Side View Mounting Type: Surface Mount Wavelength: 860nm Package / Case: 2-SMD, No Lead Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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RB751S40 | onsemi |
Description: DIODE SCHOTTKY 30V 30MA SOD523F Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 30mA Supplier Device Package: SOD-523F Operating Temperature - Junction: -55°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 500 nA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RURD620CCS9A | onsemi |
Description: DIODE ARRAY GP 200V 6A DPAK |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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SG6516DZ | onsemi |
Description: IC SUPERVISOR 4 CHANNEL 16DIP DigiKey Programmable: Not Verified Supplier Device Package: 16-PDIP Voltage - Threshold: 3.3V, 5V, 12V, 12V Number of Voltages Monitored: 4 Operating Temperature: -40°C ~ 85°C (TA) Type: Multi-Voltage Supervisor Output: Open Drain or Open Collector Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
SG6901ASZ | onsemi |
Description: IC PFC CTR AV CURR 65KHZ 20SOIC Current - Startup: 10 µA Supplier Device Package: 20-SOIC Mode: Average Current Frequency - Switching: 65kHz Voltage - Supply: 12V ~ 20V Operating Temperature: -30°C ~ 85°C Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TIS75_D75Z | onsemi |
Description: JFET N-CH 30V TO92-3 Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA Resistance - RDS(On): 60 Ohms Power - Max: 350 mW Supplier Device Package: TO-92-3 Voltage - Breakdown (V(BR)GSS): 30 V Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS) FET Type: N-Channel Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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TIS75_J35Z | onsemi |
Description: JFET N-CH 30V TO92-3 Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA Resistance - RDS(On): 60 Ohms Power - Max: 350 mW Supplier Device Package: TO-92-3 Voltage - Breakdown (V(BR)GSS): 30 V Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS) FET Type: N-Channel Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
 |
TN2219A_D26Z | onsemi |
Description: TRANS NPN 40V 1A TO226 Packaging: Tape & Reel (TR) Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-226 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 10nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
,TO-226_straightlead.jpg "TN2219A_J05Z") |
TN2219A_J05Z | onsemi |
Description: TRANS NPN 40V 1A TO92-3 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-92-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 10nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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TN2907A_D26Z | onsemi |
Description: TRANS PNP 60V 0.8A TO-226 Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Packaging: Tape & Reel (TR) Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 800 mA Part Status: Obsolete Supplier Device Package: TO-226 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 10nA (ICBO) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
,TO-226_straightlead.jpg "TN4033A_D26Z") |
TN4033A_D26Z | onsemi |
Description: TRANS PNP 80V 1A TO226 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Part Status: Obsolete Supplier Device Package: TO-226 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TN6714A_D26Z | onsemi |
Description: TRANS NPN 30V 2A TO226 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 2 A Part Status: Obsolete Supplier Device Package: TO-226 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TN6725A_D26Z | onsemi |
Description: TRANS NPN DARL 50V 1.2A TO226 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TN6725A_D27Z | onsemi |
Description: TRANS NPN DARL 50V 1.2A TO226 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TN6725A_D74Z | onsemi |
Description: TRANS NPN DARL 50V 1.2A TO226 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 1.2 A Supplier Device Package: TO-226 DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Packaging: Tape & Box (TB) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TN6725A_D75Z | onsemi |
Description: TRANS NPN DARL 50V 1.2A TO226 Current - Collector (Ic) (Max): 1.2 A Supplier Device Package: TO-226 DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Packaging: Tape & Box (TB) Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TN6726A_D26Z | onsemi |
Description: TRANS PNP 30V 1.5A TO226 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1.5 A Part Status: Obsolete Supplier Device Package: TO-226 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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U1898_D27Z | onsemi |
Description: JFET N-CH 40V TO92-3 Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Resistance - RDS(On): 50 Ohms Power - Max: 625 mW Supplier Device Package: TO-92-3 Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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ZTX749A_J05Z | onsemi |
Description: TRANS PNP 35V 2A TO92-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ZTX749A_J61Z | onsemi |
Description: TRANS PNP 35V 2A TO92-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ZTX749_D27Z | onsemi |
Description: TRANS PNP 25V 2A TO226 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ZTX749_J61Z | onsemi |
Description: TRANS PNP 25V 2A TO92-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
FDP3205 | onsemi |
Description: MOSFET N-CH 55V 100A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 7730 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 59A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDP150N10 | onsemi |
Description: MOSFET N-CH 100V 57A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 49A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
FSBB20CH60L | onsemi |
Description: IGBT IPM 600V 20A 27-PWRDIP MOD Packaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Current: 20 A Voltage: 600 V |
товару немає в наявності |
Мінімальне замовлення: 60 шт В кошику од. на суму грн. | ||||||||||||
 |
FSBF15CH60BTL | onsemi |
Description: MODULE SPM 600V 15A SPM27-JB Packaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Current: 15 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
FQPF6N90CT | onsemi |
Description: MOSFET N-CH 900V 6A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 3A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQPF9N90CT | onsemi |
Description: MOSFET N-CH 900V 8A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V |
на замовлення 1169 шт: термін постачання 21-31 дні (днів) |
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 |
FDMA410NZ | onsemi |
Description: MOSFET N-CH 20V 9.5A 6MICROFET Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 9.5A, 4.5V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
 |
FDY1002PZ | onsemi |
Description: MOSFET 2P-CH 20V 0.83A SOT563F Part Status: Active Supplier Device Package: SOT-563F Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V Current - Continuous Drain (Id) @ 25°C: 830mA Drain to Source Voltage (Vdss): 20V Power - Max: 446mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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 |
FDY102PZ | onsemi |
Description: MOSFET P-CH 20V 830MA SC89-3 Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 830mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Tape & Reel (TR) |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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| PN4117A_D26Z |
|
Виробник: onsemi
Description: JFET N-CH 40V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Description: JFET N-CH 40V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| PN4117A_J61Z |
|
Виробник: onsemi
Description: JFET N-CH 40V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: JFET N-CH 40V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| PN4117_D26Z |
|
Виробник: onsemi
Description: JFET N-CH 40V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Power - Max: 350 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Description: JFET N-CH 40V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Power - Max: 350 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| PN4122_D27Z |
|
Виробник: onsemi
Description: TRANS PNP 40V 0.1A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 1V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Description: TRANS PNP 40V 0.1A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 1V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| PN4250A_D27Z |
|
Виробник: onsemi
Description: TRANS PNP 60V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Description: TRANS PNP 60V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PN4250_D26Z |
|
Виробник: onsemi
Description: TRANS PNP 40V 0.5A TO92-3
Description: TRANS PNP 40V 0.5A TO92-3
товару немає в наявності
В кошику
од. на суму грн.
| PN4250_D27Z |
|
Виробник: onsemi
Description: TRANS PNP 40V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Description: TRANS PNP 40V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PN4250_D74Z |
|
Виробник: onsemi
Description: TRANS PNP 40V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS PNP 40V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PN4250_D75Z |
|
Виробник: onsemi
Description: TRANS PNP 40V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS PNP 40V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PN4391_D26Z |
|
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PN4391_D27Z |
|
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PN4391_D75Z |
|
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PN4392_D26Z |
|
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Resistance - RDS(On): 60 Ohms
Power - Max: 625 mW
Part Status: Obsolete
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Resistance - RDS(On): 60 Ohms
Power - Max: 625 mW
Part Status: Obsolete
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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В кошику
од. на суму грн.
| PN4392_D27Z |
|
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Resistance - RDS(On): 60 Ohms
Power - Max: 625 mW
Part Status: Obsolete
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Description: JFET N-CH 30V TO92-3
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Resistance - RDS(On): 60 Ohms
Power - Max: 625 mW
Part Status: Obsolete
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
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В кошику
од. на суму грн.
| PN4392_D75Z |
|
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Part Status: Obsolete
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Resistance - RDS(On): 60 Ohms
Power - Max: 625 mW
Description: JFET N-CH 30V TO92-3
Part Status: Obsolete
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Resistance - RDS(On): 60 Ohms
Power - Max: 625 mW
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В кошику
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| PN4393_D26Z |
|
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| PN4393_D27Z |
|
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| PN4393_D74Z |
|
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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В кошику
од. на суму грн.
| PN4393_D75Z |
|
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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| PN4416_D27Z |
Виробник: onsemi
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Supplier Device Package: TO-92-3
Noise Figure: 4dB
Technology: JFET
Configuration: N-Channel
Frequency: 400MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Supplier Device Package: TO-92-3
Noise Figure: 4dB
Technology: JFET
Configuration: N-Channel
Frequency: 400MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PN5179_D26Z |
|
Виробник: onsemi
Description: RF TRANS NPN 12V 2GHZ TO92-3
Part Status: Obsolete
Supplier Device Package: TO-92-3
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Frequency - Transition: 2GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Gain: 15dB
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Description: RF TRANS NPN 12V 2GHZ TO92-3
Part Status: Obsolete
Supplier Device Package: TO-92-3
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Frequency - Transition: 2GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Gain: 15dB
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
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| PN5432_D27Z |
|
Виробник: onsemi
Description: JFET N-CH 25V 0.35W TO92
Description: JFET N-CH 25V 0.35W TO92
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| PN5434_D26Z |
|
Виробник: onsemi
Description: JFET N-CH 25V 0.35W TO92
Description: JFET N-CH 25V 0.35W TO92
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| PN5434_D27Z |
|
Виробник: onsemi
Description: JFET N-CH 25V 0.35W TO92
Description: JFET N-CH 25V 0.35W TO92
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| PN918_D74Z |
|
Виробник: onsemi
Description: RF TRANS NPN 15V 600MHZ TO92-3
Description: RF TRANS NPN 15V 600MHZ TO92-3
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| QSB34CZR |
|
Виробник: onsemi
Description: SENSOR PHOTODIODE 940NM 2SMD
Voltage - DC Reverse (Vr) (Max): 32 V
Part Status: Active
Current - Dark (Typ): 30nA
Active Area: 6.5mm²
Spectral Range: 400nm ~ 1100nm
Viewing Angle: 120°
Response Time: 50ns
Operating Temperature: -25°C ~ 85°C
Diode Type: Pin
Mounting Type: Surface Mount
Wavelength: 940nm
Package / Case: 2-SMD, Z-Bend
Packaging: Tape & Reel (TR)
Description: SENSOR PHOTODIODE 940NM 2SMD
Voltage - DC Reverse (Vr) (Max): 32 V
Part Status: Active
Current - Dark (Typ): 30nA
Active Area: 6.5mm²
Spectral Range: 400nm ~ 1100nm
Viewing Angle: 120°
Response Time: 50ns
Operating Temperature: -25°C ~ 85°C
Diode Type: Pin
Mounting Type: Surface Mount
Wavelength: 940nm
Package / Case: 2-SMD, Z-Bend
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| QSD2030FA4A0 |
|
Виробник: onsemi
Description: SENSOR PHOTODIODE 880NM RADIAL
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Dark (Typ): 10nA
Active Area: 1.55mm²
Spectral Range: 700nm ~ 1100nm
Viewing Angle: 40°
Response Time: 5ns
Operating Temperature: -40°C ~ 100°C
Diode Type: Pin
Mounting Type: Through Hole
Wavelength: 880nm
Package / Case: Radial, 5mm Dia (T 1 3/4)
Packaging: Tape & Reel (TR)
Description: SENSOR PHOTODIODE 880NM RADIAL
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Dark (Typ): 10nA
Active Area: 1.55mm²
Spectral Range: 700nm ~ 1100nm
Viewing Angle: 40°
Response Time: 5ns
Operating Temperature: -40°C ~ 100°C
Diode Type: Pin
Mounting Type: Through Hole
Wavelength: 880nm
Package / Case: Radial, 5mm Dia (T 1 3/4)
Packaging: Tape & Reel (TR)
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| QSD2030FA4R0 |
|
Виробник: onsemi
Description: SENSOR PHOTODIODE 880NM RADIAL
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Dark (Typ): 10nA
Active Area: 1.55mm²
Spectral Range: 700nm ~ 1100nm
Viewing Angle: 40°
Response Time: 5ns
Operating Temperature: -40°C ~ 100°C
Diode Type: Pin
Mounting Type: Through Hole
Wavelength: 880nm
Package / Case: Radial, 5mm Dia (T 1 3/4)
Packaging: Tape & Reel (TR)
Description: SENSOR PHOTODIODE 880NM RADIAL
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Dark (Typ): 10nA
Active Area: 1.55mm²
Spectral Range: 700nm ~ 1100nm
Viewing Angle: 40°
Response Time: 5ns
Operating Temperature: -40°C ~ 100°C
Diode Type: Pin
Mounting Type: Through Hole
Wavelength: 880nm
Package / Case: Radial, 5mm Dia (T 1 3/4)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| QTLP610CPDTR |
|
Виробник: onsemi
Description: SENSOR PHOTO 860NM SIDE VIEW SMD
Power - Max: 75 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 µA
Current - Dark (Id) (Max): 100 nA
Viewing Angle: 160°
Operating Temperature: -25°C ~ 85°C
Orientation: Side View
Mounting Type: Surface Mount
Wavelength: 860nm
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Description: SENSOR PHOTO 860NM SIDE VIEW SMD
Power - Max: 75 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 µA
Current - Dark (Id) (Max): 100 nA
Viewing Angle: 160°
Operating Temperature: -25°C ~ 85°C
Orientation: Side View
Mounting Type: Surface Mount
Wavelength: 860nm
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| RB751S40 |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 30MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Description: DIODE SCHOTTKY 30V 30MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
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| RURD620CCS9A |
|
Виробник: onsemi
Description: DIODE ARRAY GP 200V 6A DPAK
Description: DIODE ARRAY GP 200V 6A DPAK
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Мінімальне замовлення: 2500 шт
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| SG6516DZ |
|
Виробник: onsemi
Description: IC SUPERVISOR 4 CHANNEL 16DIP
DigiKey Programmable: Not Verified
Supplier Device Package: 16-PDIP
Voltage - Threshold: 3.3V, 5V, 12V, 12V
Number of Voltages Monitored: 4
Operating Temperature: -40°C ~ 85°C (TA)
Type: Multi-Voltage Supervisor
Output: Open Drain or Open Collector
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC SUPERVISOR 4 CHANNEL 16DIP
DigiKey Programmable: Not Verified
Supplier Device Package: 16-PDIP
Voltage - Threshold: 3.3V, 5V, 12V, 12V
Number of Voltages Monitored: 4
Operating Temperature: -40°C ~ 85°C (TA)
Type: Multi-Voltage Supervisor
Output: Open Drain or Open Collector
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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| SG6901ASZ |
Виробник: onsemi
Description: IC PFC CTR AV CURR 65KHZ 20SOIC
Current - Startup: 10 µA
Supplier Device Package: 20-SOIC
Mode: Average Current
Frequency - Switching: 65kHz
Voltage - Supply: 12V ~ 20V
Operating Temperature: -30°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: IC PFC CTR AV CURR 65KHZ 20SOIC
Current - Startup: 10 µA
Supplier Device Package: 20-SOIC
Mode: Average Current
Frequency - Switching: 65kHz
Voltage - Supply: 12V ~ 20V
Operating Temperature: -30°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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| TIS75_D75Z |
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA
Resistance - RDS(On): 60 Ohms
Power - Max: 350 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA
Resistance - RDS(On): 60 Ohms
Power - Max: 350 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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Мінімальне замовлення: 2000 шт
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| TIS75_J35Z |
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA
Resistance - RDS(On): 60 Ohms
Power - Max: 350 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: JFET N-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA
Resistance - RDS(On): 60 Ohms
Power - Max: 350 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
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Мінімальне замовлення: 2000 шт
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| TN2219A_D26Z |
|
Виробник: onsemi
Description: TRANS NPN 40V 1A TO226
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Description: TRANS NPN 40V 1A TO226
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
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| TN2219A_J05Z |
|
Виробник: onsemi
Description: TRANS NPN 40V 1A TO92-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: TRANS NPN 40V 1A TO92-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
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Мінімальне замовлення: 1000 шт
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| TN2907A_D26Z |
Виробник: onsemi
Description: TRANS PNP 60V 0.8A TO-226
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Description: TRANS PNP 60V 0.8A TO-226
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
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Мінімальне замовлення: 2000 шт
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| TN4033A_D26Z |
|
Виробник: onsemi
Description: TRANS PNP 80V 1A TO226
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
Description: TRANS PNP 80V 1A TO226
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
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| TN6714A_D26Z |
|
Виробник: onsemi
Description: TRANS NPN 30V 2A TO226
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
Description: TRANS NPN 30V 2A TO226
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
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| TN6725A_D26Z |
|
Виробник: onsemi
Description: TRANS NPN DARL 50V 1.2A TO226
Description: TRANS NPN DARL 50V 1.2A TO226
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| TN6725A_D27Z |
|
Виробник: onsemi
Description: TRANS NPN DARL 50V 1.2A TO226
Description: TRANS NPN DARL 50V 1.2A TO226
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| TN6725A_D74Z |
|
Виробник: onsemi
Description: TRANS NPN DARL 50V 1.2A TO226
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 1.2 A
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Box (TB)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Description: TRANS NPN DARL 50V 1.2A TO226
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 1.2 A
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Box (TB)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
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| TN6725A_D75Z |
|
Виробник: onsemi
Description: TRANS NPN DARL 50V 1.2A TO226
Current - Collector (Ic) (Max): 1.2 A
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Box (TB)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Description: TRANS NPN DARL 50V 1.2A TO226
Current - Collector (Ic) (Max): 1.2 A
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Box (TB)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
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| TN6726A_D26Z |
|
Виробник: onsemi
Description: TRANS PNP 30V 1.5A TO226
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Obsolete
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
Description: TRANS PNP 30V 1.5A TO226
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Obsolete
Supplier Device Package: TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
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| U1898_D27Z |
|
Виробник: onsemi
Description: JFET N-CH 40V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Resistance - RDS(On): 50 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Description: JFET N-CH 40V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Resistance - RDS(On): 50 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2000 шт
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| ZTX749A_J05Z |
|
Виробник: onsemi
Description: TRANS PNP 35V 2A TO92-3
Description: TRANS PNP 35V 2A TO92-3
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| ZTX749A_J61Z |
|
Виробник: onsemi
Description: TRANS PNP 35V 2A TO92-3
Description: TRANS PNP 35V 2A TO92-3
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| ZTX749_D27Z |
|
Виробник: onsemi
Description: TRANS PNP 25V 2A TO226
Description: TRANS PNP 25V 2A TO226
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| ZTX749_J61Z |
|
Виробник: onsemi
Description: TRANS PNP 25V 2A TO92-3
Description: TRANS PNP 25V 2A TO92-3
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| FDP3205 |
|
Виробник: onsemi
Description: MOSFET N-CH 55V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 7730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 59A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 55V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 7730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 59A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| FDP150N10 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 57A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 49A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Description: MOSFET N-CH 100V 57A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 49A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
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| FSBB20CH60L |
|
Виробник: onsemi
Description: IGBT IPM 600V 20A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
Description: IGBT IPM 600V 20A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
товару немає в наявності
Мінімальне замовлення: 60 шт
В кошику
од. на суму грн.
| FSBF15CH60BTL |
|
Виробник: onsemi
Description: MODULE SPM 600V 15A SPM27-JB
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
Description: MODULE SPM 600V 15A SPM27-JB
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
товару немає в наявності
В кошику
од. на суму грн.
| FQPF6N90CT |
|
Виробник: onsemi
Description: MOSFET N-CH 900V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 3A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Description: MOSFET N-CH 900V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 3A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FQPF9N90CT |
|
Виробник: onsemi
Description: MOSFET N-CH 900V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Description: MOSFET N-CH 900V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
на замовлення 1169 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 346.38 грн |
| 50+ | 173.65 грн |
| 100+ | 158.21 грн |
| 500+ | 123.07 грн |
| 1000+ | 115.65 грн |
| FDMA410NZ |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 9.5A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V
Description: MOSFET N-CH 20V 9.5A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDY1002PZ |
|
Виробник: onsemi
Description: MOSFET 2P-CH 20V 0.83A SOT563F
Part Status: Active
Supplier Device Package: SOT-563F
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 830mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 446mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Description: MOSFET 2P-CH 20V 0.83A SOT563F
Part Status: Active
Supplier Device Package: SOT-563F
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 830mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 446mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.78 грн |
| 6000+ | 11.74 грн |
| 9000+ | 11.22 грн |
| 15000+ | 10.48 грн |
| FDY102PZ |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 830MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 830MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.70 грн |
| 6000+ | 6.74 грн |
| 9000+ | 6.39 грн |
| 15000+ | 5.63 грн |
| 21000+ | 5.41 грн |
| 30000+ | 5.20 грн |