Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NCV7513AFTR2G | onsemi |
Description: IC MTR DRIVER 4.75V-5.25V 32LQFP Packaging: Tape & Reel (TR) Package / Case: 32-LQFP Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Interface: SPI, Parallel Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Pre-Driver - Low Side (6) Voltage - Supply: 4.75V ~ 5.25V Technology: NMOS Supplier Device Package: 32-LQFP (7x7) Motor Type - AC, DC: Brushed DC Part Status: Obsolete Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV86603D33R2G | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV86603D50R2G | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV86603DT50RKG | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV8665D50G | onsemi |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 34 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 5V Control Features: Reset Grade: Automotive PSRR: 69dB (100Hz) Voltage Dropout (Max): 0.6V @ 150mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 40 µA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV8665D50R2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 34 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 5V Control Features: Reset Grade: Automotive PSRR: 69dB (100Hz) Voltage Dropout (Max): 0.6V @ 150mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 40 µA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NLAS3899BMNTXG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 2.5Ohm -3db Bandwidth: 280MHz Supplier Device Package: 16-QFN (3x3) Voltage - Supply, Single (V+): 1.65V ~ 4.3V Charge Injection: 111pC Switch Circuit: DPDT Multiplexer/Demultiplexer Circuit: 2:2 Channel-to-Channel Matching (ΔRon): 700mOhm Switch Time (Ton, Toff) (Max): 40ns, 30ns Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 300nA Part Status: Active Number of Circuits: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NLAS7242MUTBG | onsemi |
![]() Packaging: Tape & Reel (TR) Features: USB 2.0 Package / Case: 10-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 8.5Ohm -3db Bandwidth: 950MHz Supplier Device Package: 10-UQFN (1.4x1.8) Voltage - Supply, Single (V+): 1.65V ~ 4.5V Switch Circuit: DPDT Part Status: Active Number of Channels: 1 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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NP0080TAT1G | onsemi |
Description: THYRISTOR 8V 50A SOT-23-5 THIN Packaging: Tape & Reel (TR) Capacitance: 13pF Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 20V Voltage - Off State: 8V Supplier Device Package: 5-TSOP Current - Hold (Ih): 50 mA Current - Peak Pulse (8/20µs): 50 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSS1C201LT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 110MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 490 mW |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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NSS20101JT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 350MHz Supplier Device Package: SC-89-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 300 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSS40300DDR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 653mW Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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NSS40302PDR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 653mW Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NTB5411NT4G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V Power Dissipation (Max): 166W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTB5412NT4G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 0 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTD5414NT4G | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTD5802NT4G | onsemi |
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на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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NTGS1135PT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 4.5V Power Dissipation (Max): 970mW (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS4823NT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 30A, 10V Power Dissipation (Max): 860mW (Ta), 32.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTUD3169CZT5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 125mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 Part Status: Active |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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NTUD3170NZT5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 125mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 |
на замовлення 104000 шт: термін постачання 21-31 дні (днів) |
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NTZD3156CT2G | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTZD3156CT5G | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NUP4105MUTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 3pF @ 1MHz Current - Peak Pulse (10/1000µs): 25A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 10-UDFN (2.6x2.6) Unidirectional Channels: 4 Voltage - Breakdown (Min): 5V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 450W Power Line Protection: Yes Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCD4N60TM_WS | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCD5N60TM-WS | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FDD6N50TM-WS | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDS4897AC | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V Rds On (Max) @ Id, Vgs: 26mOhm @ 6.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSA2268L10X | onsemi |
Description: IC SWITCH DUAL SPDT 10MICROPAK Packaging: Tape & Reel (TR) Features: Break-Before-Make Package / Case: 10-UFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio On-State Resistance (Max): 300mOhm (Typ) -3db Bandwidth: 50MHz Supplier Device Package: 10-MicroPak™ Voltage - Supply, Single (V+): 1.65V ~ 4.3V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FSQ321LX | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8LSOP Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Frequency - Switching: 55kHz ~ 67kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 20V Supplier Device Package: 8-LSOP Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 12 V Control Features: Sync Part Status: Last Time Buy Power (Watts): 12 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCD4N60TM_WS | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCD5N60TM-WS | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
на замовлення 2935 шт: термін постачання 21-31 дні (днів) |
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FDS4897AC | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V Rds On (Max) @ Id, Vgs: 26mOhm @ 6.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSA2268L10X | onsemi |
Description: IC SWITCH DUAL SPDT 10MICROPAK Packaging: Cut Tape (CT) Features: Break-Before-Make Package / Case: 10-UFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio On-State Resistance (Max): 300mOhm (Typ) -3db Bandwidth: 50MHz Supplier Device Package: 10-MicroPak™ Voltage - Supply, Single (V+): 1.65V ~ 4.3V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 2 |
на замовлення 9800 шт: термін постачання 21-31 дні (днів) |
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FSQ321LX | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8LSOP Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Frequency - Switching: 55kHz ~ 67kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 20V Supplier Device Package: 8-LSOP Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 12 V Control Features: Sync Part Status: Last Time Buy Power (Watts): 12 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NDB5060L | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 13A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 30 V |
на замовлення 1053 шт: термін постачання 21-31 дні (днів) |
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NSR0240HT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Schottky Capacitance @ Vr, F: 4pF @ 5V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSR0240V2T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Schottky Capacitance @ Vr, F: 4pF @ 5V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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NSR0340HT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 6pF @ 10V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA Current - Reverse Leakage @ Vr: 6 µA @ 40 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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NSR0340V2T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 6pF @ 10V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA Current - Reverse Leakage @ Vr: 6 µA @ 40 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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NSR0240HT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Schottky Capacitance @ Vr, F: 4pF @ 5V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
на замовлення 1612 шт: термін постачання 21-31 дні (днів) |
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NSR0240V2T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Schottky Capacitance @ Vr, F: 4pF @ 5V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
на замовлення 49585 шт: термін постачання 21-31 дні (днів) |
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NSR0340HT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 6pF @ 10V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA Current - Reverse Leakage @ Vr: 6 µA @ 40 V |
на замовлення 28651 шт: термін постачання 21-31 дні (днів) |
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NSR0340V2T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 6pF @ 10V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA Current - Reverse Leakage @ Vr: 6 µA @ 40 V |
на замовлення 26229 шт: термін постачання 21-31 дні (днів) |
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NST3904F3T5G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SOT-1123 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 290 mW |
на замовлення 131342 шт: термін постачання 21-31 дні (днів) |
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NST847BF3T5G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 290 mW |
на замовлення 12586 шт: термін постачання 21-31 дні (днів) |
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NSR0520V2T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Technology: Schottky Capacitance @ Vr, F: 35pF @ 1V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA Current - Reverse Leakage @ Vr: 75 µA @ 20 V |
на замовлення 5926 шт: термін постачання 21-31 дні (днів) |
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NSR0530P2T5G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
на замовлення 41505 шт: термін постачання 21-31 дні (днів) |
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FDP15N40 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDP19N40 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 9.5A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FGPF70N33BTTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 70A Supplier Device Package: TO-220F-3 IGBT Type: Trench Gate Charge: 49 nC Voltage - Collector Emitter Breakdown (Max): 330 V Current - Collector Pulsed (Icm): 220 A Power - Max: 48 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN5361UC12X | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMS6681Z | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22.1A, 10V Power Dissipation (Max): 2.5W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN5361UC12X | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMS6681Z | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22.1A, 10V Power Dissipation (Max): 2.5W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDA28N50F | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 175mOhm @ 14A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5387 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMA3023PZ | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Part Status: Active |
на замовлення 16500 шт: термін постачання 21-31 дні (днів) |
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FDMC6675BZ | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 9.5A, 10V Power Dissipation (Max): 2.3W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMS6673BZ | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15.2A, 10V Power Dissipation (Max): 2.5W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 15 V |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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FDMS7670 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 21A, 10V Power Dissipation (Max): 2.5W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4105 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NCV7513AFTR2G |
Виробник: onsemi
Description: IC MTR DRIVER 4.75V-5.25V 32LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: SPI, Parallel
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Pre-Driver - Low Side (6)
Voltage - Supply: 4.75V ~ 5.25V
Technology: NMOS
Supplier Device Package: 32-LQFP (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
Grade: Automotive
Description: IC MTR DRIVER 4.75V-5.25V 32LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: SPI, Parallel
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Pre-Driver - Low Side (6)
Voltage - Supply: 4.75V ~ 5.25V
Technology: NMOS
Supplier Device Package: 32-LQFP (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
Grade: Automotive
товару немає в наявності
В кошику
од. на суму грн.
NCV86603D33R2G |
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Виробник: onsemi
Description: IC REG LINEAR 3.3V 150MA 8SOIC
Description: IC REG LINEAR 3.3V 150MA 8SOIC
товару немає в наявності
В кошику
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NCV86603D50R2G |
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Виробник: onsemi
Description: IC REG LINEAR 5V 150MA 8SOIC
Description: IC REG LINEAR 5V 150MA 8SOIC
товару немає в наявності
В кошику
од. на суму грн.
NCV86603DT50RKG |
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Виробник: onsemi
Description: IC REG LINEAR 5V 150MA DPAK-5
Description: IC REG LINEAR 5V 150MA DPAK-5
товару немає в наявності
В кошику
од. на суму грн.
NCV8665D50G |
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Виробник: onsemi
Description: IC REG LINEAR 5V 150MA 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 34 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 69dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 150MA 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 34 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 69dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
NCV8665D50R2G |
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Виробник: onsemi
Description: IC REG LINEAR 5V 150MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 34 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 69dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 150MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 34 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 69dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
NLAS3899BMNTXG |
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Виробник: onsemi
Description: IC SWITCH DPDT X 2 2.5OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 2.5Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 111pC
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 700mOhm
Switch Time (Ton, Toff) (Max): 40ns, 30ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 300nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH DPDT X 2 2.5OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 2.5Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 111pC
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 700mOhm
Switch Time (Ton, Toff) (Max): 40ns, 30ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 300nA
Part Status: Active
Number of Circuits: 2
товару немає в наявності
В кошику
од. на суму грн.
NLAS7242MUTBG |
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Виробник: onsemi
Description: IC USB SWITCH DPST 10UQFN
Packaging: Tape & Reel (TR)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 8.5Ohm
-3db Bandwidth: 950MHz
Supplier Device Package: 10-UQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Switch Circuit: DPDT
Part Status: Active
Number of Channels: 1
Description: IC USB SWITCH DPST 10UQFN
Packaging: Tape & Reel (TR)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 8.5Ohm
-3db Bandwidth: 950MHz
Supplier Device Package: 10-UQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Switch Circuit: DPDT
Part Status: Active
Number of Channels: 1
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 34.32 грн |
6000+ | 31.40 грн |
15000+ | 30.22 грн |
NP0080TAT1G |
Виробник: onsemi
Description: THYRISTOR 8V 50A SOT-23-5 THIN
Packaging: Tape & Reel (TR)
Capacitance: 13pF
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 20V
Voltage - Off State: 8V
Supplier Device Package: 5-TSOP
Current - Hold (Ih): 50 mA
Current - Peak Pulse (8/20µs): 50 A
Description: THYRISTOR 8V 50A SOT-23-5 THIN
Packaging: Tape & Reel (TR)
Capacitance: 13pF
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 20V
Voltage - Off State: 8V
Supplier Device Package: 5-TSOP
Current - Hold (Ih): 50 mA
Current - Peak Pulse (8/20µs): 50 A
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NSS1C201LT1G |
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Виробник: onsemi
Description: TRANS NPN 100V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 490 mW
Description: TRANS NPN 100V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 490 mW
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 10.76 грн |
6000+ | 9.47 грн |
9000+ | 9.01 грн |
15000+ | 7.97 грн |
21000+ | 7.69 грн |
NSS20101JT1G |
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Виробник: onsemi
Description: TRANS NPN 20V 1A SC-89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: SC-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 300 mW
Description: TRANS NPN 20V 1A SC-89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: SC-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 300 mW
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NSS40300DDR2G |
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Виробник: onsemi
Description: TRANS 2PNP DUAL 40V 3A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
Part Status: Active
Description: TRANS 2PNP DUAL 40V 3A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 26.65 грн |
5000+ | 23.74 грн |
7500+ | 22.76 грн |
12500+ | 20.54 грн |
NSS40302PDR2G |
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Виробник: onsemi
Description: TRANS NPN/PNP 40V 3A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
Part Status: Active
Description: TRANS NPN/PNP 40V 3A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 38.13 грн |
5000+ | 34.17 грн |
NTB5411NT4G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Description: MOSFET N-CH 60V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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NTB5412NT4G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
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NTD5414NT4G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 24A DPAK
Description: MOSFET N-CH 60V 24A DPAK
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NTD5802NT4G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 16.4A/101A DPAK
Description: MOSFET N-CH 40V 16.4A/101A DPAK
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 67.44 грн |
5000+ | 62.54 грн |
12500+ | 60.13 грн |
NTGS1135PT1G |
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Виробник: onsemi
Description: MOSFET P-CH 8V 4.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 970mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 6 V
Description: MOSFET P-CH 8V 4.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 970mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 6 V
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NTMFS4823NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 6.9A/30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 30A, 10V
Power Dissipation (Max): 860mW (Ta), 32.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 15 V
Description: MOSFET N-CH 30V 6.9A/30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 30A, 10V
Power Dissipation (Max): 860mW (Ta), 32.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 15 V
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NTUD3169CZT5G |
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Виробник: onsemi
Description: MOSFET N/P-CH 20V 0.22A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
Description: MOSFET N/P-CH 20V 0.22A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8000+ | 10.24 грн |
16000+ | 9.23 грн |
24000+ | 8.47 грн |
NTUD3170NZT5G |
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Виробник: onsemi
Description: MOSFET 2N-CH 20V 0.22A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Description: MOSFET 2N-CH 20V 0.22A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
на замовлення 104000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8000+ | 14.66 грн |
16000+ | 8.25 грн |
NTZD3156CT2G |
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Виробник: onsemi
Description: MOSFET N/P-CH 20V SOT-563
Description: MOSFET N/P-CH 20V SOT-563
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NTZD3156CT5G |
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Виробник: onsemi
Description: MOSFET N/P-CH 20V SOT-563
Description: MOSFET N/P-CH 20V SOT-563
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NUP4105MUTAG |
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Виробник: onsemi
Description: TVS DIODE 3.3VWM 14VC 10UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.6x2.6)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 450W
Power Line Protection: Yes
Part Status: Obsolete
Description: TVS DIODE 3.3VWM 14VC 10UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.6x2.6)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 450W
Power Line Protection: Yes
Part Status: Obsolete
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FCD4N60TM_WS |
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Виробник: onsemi
Description: MOSFET N-CH 600V 3.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Description: MOSFET N-CH 600V 3.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
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FCD5N60TM-WS |
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Виробник: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 49.51 грн |
FDD6N50TM-WS |
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Виробник: onsemi
Description: MOSFET N-CH 500V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Description: MOSFET N-CH 500V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
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FDS4897AC |
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Виробник: onsemi
Description: MOSFET N/P-CH 40V 6.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 40V 6.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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FSA2268L10X |
Виробник: onsemi
Description: IC SWITCH DUAL SPDT 10MICROPAK
Packaging: Tape & Reel (TR)
Features: Break-Before-Make
Package / Case: 10-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 300mOhm (Typ)
-3db Bandwidth: 50MHz
Supplier Device Package: 10-MicroPak™
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Description: IC SWITCH DUAL SPDT 10MICROPAK
Packaging: Tape & Reel (TR)
Features: Break-Before-Make
Package / Case: 10-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 300mOhm (Typ)
-3db Bandwidth: 50MHz
Supplier Device Package: 10-MicroPak™
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 28.64 грн |
FSQ321LX |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Last Time Buy
Power (Watts): 12 W
Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Last Time Buy
Power (Watts): 12 W
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FCD4N60TM_WS |
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Виробник: onsemi
Description: MOSFET N-CH 600V 3.9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Description: MOSFET N-CH 600V 3.9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
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FCD5N60TM-WS |
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Виробник: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 2935 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 94.47 грн |
10+ | 77.52 грн |
100+ | 65.13 грн |
500+ | 54.60 грн |
FDS4897AC |
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Виробник: onsemi
Description: MOSFET N/P-CH 40V 6.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 40V 6.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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FSA2268L10X |
Виробник: onsemi
Description: IC SWITCH DUAL SPDT 10MICROPAK
Packaging: Cut Tape (CT)
Features: Break-Before-Make
Package / Case: 10-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 300mOhm (Typ)
-3db Bandwidth: 50MHz
Supplier Device Package: 10-MicroPak™
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Description: IC SWITCH DUAL SPDT 10MICROPAK
Packaging: Cut Tape (CT)
Features: Break-Before-Make
Package / Case: 10-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 300mOhm (Typ)
-3db Bandwidth: 50MHz
Supplier Device Package: 10-MicroPak™
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
на замовлення 9800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 122.26 грн |
10+ | 72.86 грн |
25+ | 60.95 грн |
100+ | 44.60 грн |
250+ | 38.42 грн |
500+ | 34.61 грн |
1000+ | 30.91 грн |
2500+ | 27.54 грн |
FSQ321LX |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Last Time Buy
Power (Watts): 12 W
Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Last Time Buy
Power (Watts): 12 W
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NDB5060L |
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Виробник: onsemi
Description: MOSFET N-CH 60V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 30 V
Description: MOSFET N-CH 60V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 30 V
на замовлення 1053 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 198.47 грн |
10+ | 143.27 грн |
100+ | 99.41 грн |
NSR0240HT1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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NSR0240V2T1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 6.63 грн |
6000+ | 5.78 грн |
9000+ | 5.47 грн |
15000+ | 4.81 грн |
21000+ | 4.62 грн |
30000+ | 4.43 грн |
NSR0340HT1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.15 грн |
6000+ | 1.97 грн |
15000+ | 1.77 грн |
21000+ | 1.72 грн |
NSR0340V2T1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.18 грн |
6000+ | 2.89 грн |
9000+ | 2.86 грн |
15000+ | 2.67 грн |
NSR0240HT1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
на замовлення 1612 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
29+ | 11.11 грн |
45+ | 6.80 грн |
100+ | 5.50 грн |
500+ | 4.07 грн |
1000+ | 3.58 грн |
NSR0240V2T1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
на замовлення 49585 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 30.96 грн |
17+ | 18.12 грн |
100+ | 11.41 грн |
500+ | 7.99 грн |
1000+ | 7.11 грн |
NSR0340HT1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
на замовлення 28651 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
45+ | 7.15 грн |
68+ | 4.51 грн |
100+ | 4.35 грн |
500+ | 3.41 грн |
1000+ | 3.26 грн |
NSR0340V2T1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
на замовлення 26229 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
23+ | 14.29 грн |
35+ | 8.87 грн |
100+ | 6.33 грн |
500+ | 5.20 грн |
1000+ | 4.88 грн |
NST3904F3T5G |
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Виробник: onsemi
Description: TRANS NPN 40V 0.2A SOT-1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-1123
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 290 mW
Description: TRANS NPN 40V 0.2A SOT-1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-1123
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 290 mW
на замовлення 131342 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.79 грн |
19+ | 16.59 грн |
100+ | 10.44 грн |
500+ | 7.28 грн |
1000+ | 6.46 грн |
2000+ | 5.78 грн |
NST847BF3T5G |
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Виробник: onsemi
Description: TRANS NPN 45V 0.1A SOT1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 290 mW
Description: TRANS NPN 45V 0.1A SOT1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 290 mW
на замовлення 12586 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 34.14 грн |
14+ | 22.78 грн |
100+ | 11.51 грн |
500+ | 8.81 грн |
1000+ | 6.54 грн |
2000+ | 5.50 грн |
NSR0520V2T1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 20V 500MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Description: DIODE SCHOTTKY 20V 500MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
на замовлення 5926 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 25.40 грн |
21+ | 14.75 грн |
100+ | 9.21 грн |
500+ | 6.42 грн |
1000+ | 5.69 грн |
NSR0530P2T5G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 500MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE SCHOTTKY 30V 500MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
на замовлення 41505 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
19+ | 17.47 грн |
27+ | 11.54 грн |
100+ | 7.19 грн |
500+ | 6.01 грн |
1000+ | 4.96 грн |
2000+ | 4.23 грн |
FDP15N40 |
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Виробник: onsemi
Description: MOSFET N-CH 400V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 25 V
Description: MOSFET N-CH 400V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 25 V
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FDP19N40 |
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Виробник: onsemi
Description: MOSFET N-CH 400V 19A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 9.5A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V
Description: MOSFET N-CH 400V 19A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 9.5A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V
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FGPF70N33BTTU |
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Виробник: onsemi
Description: IGBT 330V 48W TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 70A
Supplier Device Package: TO-220F-3
IGBT Type: Trench
Gate Charge: 49 nC
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 48 W
Description: IGBT 330V 48W TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 70A
Supplier Device Package: TO-220F-3
IGBT Type: Trench
Gate Charge: 49 nC
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 48 W
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FAN5361UC12X |
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Виробник: onsemi
Description: IC REG BUCK 1.2V 600MA 6WLCSP
Description: IC REG BUCK 1.2V 600MA 6WLCSP
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FDMS6681Z |
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Виробник: onsemi
Description: MOSFET P-CH 30V 21.1A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 15 V
Description: MOSFET P-CH 30V 21.1A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 15 V
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FAN5361UC12X |
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Виробник: onsemi
Description: IC REG BUCK 1.2V 600MA 6WLCSP
Description: IC REG BUCK 1.2V 600MA 6WLCSP
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FDMS6681Z |
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Виробник: onsemi
Description: MOSFET P-CH 30V 21.1A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 15 V
Description: MOSFET P-CH 30V 21.1A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 15 V
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FDA28N50F |
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Виробник: onsemi
Description: MOSFET N-CH 500V 28A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 14A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5387 pF @ 25 V
Description: MOSFET N-CH 500V 28A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 14A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5387 pF @ 25 V
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FDMA3023PZ |
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Виробник: onsemi
Description: MOSFET 2P-CH 30V 2.9A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Description: MOSFET 2P-CH 30V 2.9A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
на замовлення 16500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 23.90 грн |
6000+ | 21.31 грн |
9000+ | 20.49 грн |
15000+ | 18.64 грн |
FDMC6675BZ |
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Виробник: onsemi
Description: MOSFET P-CH 30V 9.5A/20A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 9.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 15 V
Description: MOSFET P-CH 30V 9.5A/20A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 9.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 35.94 грн |
FDMS6673BZ |
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Виробник: onsemi
Description: MOSFET P-CH 30V 15.2A/28A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 15 V
Description: MOSFET P-CH 30V 15.2A/28A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 15 V
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 59.28 грн |
FDMS7670 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 21A/42A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 21A, 10V
Power Dissipation (Max): 2.5W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4105 pF @ 15 V
Description: MOSFET N-CH 30V 21A/42A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 21A, 10V
Power Dissipation (Max): 2.5W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4105 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 36.08 грн |