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NCP3337MN250GEVB NCP3337MN250GEVB onsemi ncp3337-d.pdf Description: BOARD EVALUATION NCP3337 2.5V
Packaging: Bulk
Voltage - Output: 2.5V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP3337
Supplied Contents: Board(s)
Channels per IC: 1 - Single
товару немає в наявності
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NCP3337MN330GEVB NCP3337MN330GEVB onsemi ncp3337-d.pdf Description: BOARD EVALUATION NCP3337 3.3V
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP3337
Supplied Contents: Board(s)
Channels per IC: 1 - Single
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+2901.28 грн
В кошику  од. на суму  грн.
NCP3337MN500GEVB NCP3337MN500GEVB onsemi ncp3337-d.pdf Description: BOARD EVALUATION NCP3337 5.0V
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP3337
Supplied Contents: Board(s)
Channels per IC: 1 - Single
товару немає в наявності
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NCP3337MNADJGEVB NCP3337MNADJGEVB onsemi NCP3337MNADJGEVB_Web.pdf Description: BOARD EVALUATION NCP3337 ADJ
Packaging: Box
Voltage - Output: 1.25V ~ 10V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP3337
Supplied Contents: Board(s)
Channels per IC: 1 - Single
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+2901.28 грн
В кошику  од. на суму  грн.
NCP508SQ15T1GEVB NCP508SQ15T1GEVB onsemi ncp508-d.pdf Description: EVAL BOARD FOR NCP508
Packaging: Bulk
Voltage - Output: 1.5V
Voltage - Input: 5V
Current - Output: 50mA
Contents: Board(s)
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP508
Supplied Contents: Board(s)
Channels per IC: 1 - Single
товару немає в наявності
В кошику  од. на суму  грн.
NCP508SQ33T1GEVB NCP508SQ33T1GEVB onsemi ncp508-d.pdf Description: EVAL BOARD FOR NCP508
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 5V
Current - Output: 50mA
Contents: Board(s)
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP508
Supplied Contents: Board(s)
Channels per IC: 1 - Single
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NCP580EVB NCP580EVB onsemi ncp580.pdf Description: EVAL BOARD FOR NCP580
Packaging: Bulk
Voltage - Output: 2.8V
Voltage - Input: 1.5V ~ 4V
Current - Output: 120mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: NCP580
Channels per IC: 1 - Single
товару немає в наявності
В кошику  од. на суму  грн.
NCP59302DSADGEVB NCP59302DSADGEVB onsemi ncp59302-d.pdf Description: BOARD EVALUATION NCP59302 REG
Packaging: Bulk
Voltage - Output: 2.5V
Current - Output: 3A
Regulator Type: Positive Adjustable
Board Type: Fully Populated
Utilized IC / Part: NCP59302
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+5236.21 грн
В кошику  од. на суму  грн.
NCS2553DGEVB NCS2553DGEVB onsemi ncs2553-d.pdf Description: EVAL BOARD FOR NCS2553
Packaging: Bulk
Function: Amplifier, Triple
Type: Video
Contents: Board(s)
Utilized IC / Part: NCS2553
Supplied Contents: Board(s)
Primary Attributes: Gain 6dB, Reconstruction Filters
Secondary Attributes: AC- or DC-Coupled Inputs and Outputs
Embedded: No
Part Status: Not For New Designs
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NCS2563DGEVB NCS2563DGEVB onsemi ncs2563-d.pdf Description: EVAL BOARD FOR NCS2563
Packaging: Bulk
Function: Amplifier, Triple
Type: Video
Contents: Board(s)
Utilized IC / Part: NCS2563
Supplied Contents: Board(s)
Primary Attributes: Gain 6dB, Reconstruction Filters
Secondary Attributes: AC- or DC-Coupled Inputs and Outputs
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+7537.63 грн
В кошику  од. на суму  грн.
NCV7680PWR22GEVB NCV7680PWR22GEVB onsemi ncv7680-d.pdf Description: BOARD EVALUATION NCV7680
Features: PWM Brightness control
Packaging: Bulk
Utilized IC / Part: NCV7680
Supplied Contents: Board(s)
Outputs and Type: 8, Non-Isolated
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NCV8537MN180GEVB NCV8537MN180GEVB onsemi ncv8537-d.pdf Description: EVAL BOARD FOR NCV8537
Packaging: Bulk
Voltage - Output: 1.8V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: NCV8537
Channels per IC: 1 - Single
товару немає в наявності
В кошику  од. на суму  грн.
15GN01CA-TB-E 15GN01CA-TB-E onsemi ena1098-d.pdf Description: RF TRANS NPN 8V 1.5GHZ 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Supplier Device Package: 3-CP
товару немає в наявності
В кошику  од. на суму  грн.
2SA2099 2SA2099 onsemi 2SA2099%2C%202SC5888.pdf Description: TRANS PNP 50V 10A TO-220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TO-220ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
2SA2125-TD-E 2SA2125-TD-E onsemi 2sa2125-d.pdf Description: TRANS PNP 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
на замовлення 62000 шт:
термін постачання 21-31 дні (днів)
1000+15.52 грн
2000+13.54 грн
3000+12.83 грн
5000+11.29 грн
7000+10.84 грн
10000+10.41 грн
25000+9.30 грн
50000+9.13 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2SA2126-E 2SA2126-E onsemi en7990-d.pdf Description: TRANS PNP 50V 3A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SB1124T-TD-E 2SB1124T-TD-E onsemi en2019-d.pdf Description: TRANS PNP 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SB1143S 2SB1143S onsemi 2SB1143%2C2SD1683.pdf Description: TRANS PNP 50V 4A TO126ML
Packaging: Bag
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
товару немає в наявності
В кошику  од. на суму  грн.
2SB1143T 2SB1143T onsemi 2SB1143,2SD1683.pdf Description: TRANS PNP 50V 4A TO126ML
Packaging: Bag
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
товару немає в наявності
В кошику  од. на суму  грн.
2SB1202T-TL-E 2SB1202T-TL-E onsemi Description: TRANS PNP 50V 3A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
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2SC4731S-AY 2SC4731S-AY onsemi Description: TRANS NPN 100V 4A FLP
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 No Tab
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: FLP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
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2SC4731T-AY 2SC4731T-AY onsemi Description: TRANS NPN 100V 4A FLP
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 No Tab
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: FLP
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
товару немає в наявності
В кошику  од. на суму  грн.
2SC5226A-4-TL-E 2SC5226A-4-TL-E onsemi 2sc5226a-d.pdf Description: RF TRANS NPN 10V 7GHZ SC-70 MCP3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: SC-70 / MCP3
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
2SC5226A-5-TL-E 2SC5226A-5-TL-E onsemi 2sc5226a-d.pdf Description: RF TRANS NPN 10V 7GHZ 3MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: 3-MCP
Part Status: Active
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
3000+9.46 грн
6000+8.73 грн
9000+7.86 грн
30000+7.27 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
2SC5227A-5-TB-E 2SC5227A-5-TB-E onsemi 2sc5227a-d.pdf Description: RF TRANS NPN 10V 7GHZ 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: 3-CP
товару немає в наявності
В кошику  од. на суму  грн.
2SC5231A-8-TL-E 2SC5231A-8-TL-E onsemi 2SC5231A.pdf Description: RF TRANS NPN 10V 7GHZ SMCP
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: SMCP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2SC5347AF-TD-E 2SC5347AF-TD-E onsemi ena1087-d.pdf Description: RF TRANS NPN 12V 4.7GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 8dB
Power - Max: 1.3W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V
Frequency - Transition: 4.7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: PCP
товару немає в наявності
В кошику  од. на суму  грн.
2SC5488A-TL-H 2SC5488A-TL-H onsemi 2sc5488a-d.pdf Description: RF TRANS NPN 10V 7GHZ 3-SSFP
Packaging: Tape & Reel (TR)
Package / Case: SC-81
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: 3-SSFP
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
8000+8.99 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
2SC5551AE-TD-E 2SC5551AE-TD-E onsemi 2sc5551a-d.pdf Description: RF TRANS NPN 30V 3.5GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 1.3W
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: PCP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2SC5551AF-TD-E 2SC5551AF-TD-E onsemi 2sc5551a-d.pdf Description: RF TRANS NPN 30V 3.5GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 1.3W
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: PCP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2SC5888 2SC5888 onsemi 2SA2099%2C%202SC5888.pdf Description: TRANS NPN 50V 10A TO-220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-220ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
2SC5964-TD-E 2SC5964-TD-E onsemi 2sa2125-d.pdf Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
1000+16.56 грн
2000+14.47 грн
3000+13.71 грн
5000+12.07 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2SC6094-TD-E 2SC6094-TD-E onsemi ena0410-d.pdf Description: TRANS NPN 60V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
товару немає в наявності
В кошику  од. на суму  грн.
2SC6097-E 2SC6097-E onsemi 2sc6097-d.pdf Description: TRANS NPN 60V 3A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товару немає в наявності
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2SC6097-TL-E 2SC6097-TL-E onsemi 2sc6097-d.pdf Description: TRANS NPN 60V 3A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
на замовлення 23800 шт:
термін постачання 21-31 дні (днів)
700+27.53 грн
1400+24.16 грн
2100+22.96 грн
3500+20.28 грн
4900+19.53 грн
7000+18.80 грн
17500+17.41 грн
Мінімальне замовлення: 700
В кошику  од. на суму  грн.
2SD1624T-TD-E 2SD1624T-TD-E onsemi en2019-d.pdf Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+20.47 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2SD1802S-TL-E 2SD1802S-TL-E onsemi 2sb1202-d.pdf Description: TRANS NPN 50V 3A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SD1802T-TL-E 2SD1802T-TL-E onsemi 2sb1202-d.pdf Description: TRANS NPN 50V 3A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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В кошику  од. на суму  грн.
2SD1816S-TL-E 2SD1816S-TL-E onsemi 2sb1216_2sd1816-d.pdf Description: TRANS NPN 100V 4A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
700+26.55 грн
1400+23.28 грн
Мінімальне замовлення: 700
В кошику  од. на суму  грн.
2SD1816T-TL-E 2SD1816T-TL-E onsemi 2sb1216_2sd1816-d.pdf Description: TRANS NPN 100V 4A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SJ652 2SJ652 onsemi Description: MOSFET P-CH 60V 28A TO220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V
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2SK3557-6-TB-E 2SK3557-6-TB-E onsemi 2sk3557-d.pdf Description: JFET N-CH 5V 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 50mA
Mounting Type: Surface Mount
Configuration: N-Channel
Operating Temperature: 150°C (TJ)
Power - Output: 200mW
Technology: JFET
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Noise Figure: 1dB
Voltage - Breakdown (V(BR)GSS): 15 V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: 3-CP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Voltage - Rated: 15 V
Power - Max: 200 mW
Voltage - Test: 5 V
Current - Test: 1 mA
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 5 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+11.91 грн
6000+10.50 грн
9000+10.00 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
2SK3703 2SK3703 onsemi Description: MOSFET N-CH 60V 30A TO220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V
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2SK3704 2SK3704 onsemi 2SK3704.pdf Description: MOSFET N-CH 60V 45A TO220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 23A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 20 V
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2SK3745LS 2SK3745LS onsemi 2sk3745ls-d.pdf Description: MOSFET N-CH 1500V 2A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
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2SK3746 2SK3746 onsemi 2sk3746-d.pdf Description: MOSFET N-CH 1500V 2A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 110W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
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В кошику  од. на суму  грн.
2SK3747 2SK3747 onsemi 2sk3747-d.pdf Description: MOSFET N-CH 1500V 2A TO3PML
Packaging: Tray
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Supplier Device Package: TO-3PML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±35V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
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2SK3747-MG8 2SK3747-MG8 onsemi Description: MOSFET N-CH 1500V 2A TO3PML
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Supplier Device Package: TO-3PML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±35V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
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2SK3748 2SK3748 onsemi 2SK3748.pdf Description: MOSFET N-CH 1500V 4A TO3PML
Packaging: Tray
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 2A, 10V
Power Dissipation (Max): 3W (Ta), 65W (Tc)
Supplier Device Package: TO-3PML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
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В кошику  од. на суму  грн.
2SK3796-3-TL-E 2SK3796-3-TL-E onsemi 2SK3796.pdf Description: JFET N-CH 10MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
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2SK4065-DL-E 2SK4065-DL-E onsemi Description: MOSFET N-CH 75V 100A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: SMP-FD
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
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2SK4065-E 2SK4065-E onsemi Description: MOSFET N-CH 75V 100A SMP
Packaging: Bag
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: SMP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
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2SK4066-E 2SK4066-E onsemi Description: MOSFET N-CH 60V 100A SMP
Packaging: Bag
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: SMP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
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2SK4087LS 2SK4087LS onsemi 2SK4087LS.pdf Description: MOSFET N-CH 600V 9.2A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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2SK4088LS 2SK4088LS onsemi 2SK4088LS_May2013.pdf Description: MOSFET N-CH 650V 7.5A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
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2SK4089LS 2SK4089LS onsemi 2SK4089LS.pdf Description: MOSFET N-CH 650V 8.5A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товару немає в наявності
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2SK4117LS 2SK4117LS onsemi 2SK4117LS.pdf Description: MOSFET N-CH 400V 10.4A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 30 V
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2SK4126 2SK4126 onsemi 2SK4126.pdf Description: MOSFET N-CH 650V 15A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товару немає в наявності
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2SK4177-DL-E 2SK4177-DL-E onsemi ena0869-d.pdf Description: MOSFET N-CH 1500V 2A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 80W (Tc)
Supplier Device Package: SMP-FD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
товару немає в наявності
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2SK4210 2SK4210 onsemi 2SK4210.pdf Description: MOSFET N-CH 900V 10A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 190W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
товару немає в наявності
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NCP3337MN250GEVB ncp3337-d.pdf
NCP3337MN250GEVB
Виробник: onsemi
Description: BOARD EVALUATION NCP3337 2.5V
Packaging: Bulk
Voltage - Output: 2.5V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP3337
Supplied Contents: Board(s)
Channels per IC: 1 - Single
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NCP3337MN330GEVB ncp3337-d.pdf
NCP3337MN330GEVB
Виробник: onsemi
Description: BOARD EVALUATION NCP3337 3.3V
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP3337
Supplied Contents: Board(s)
Channels per IC: 1 - Single
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2901.28 грн
В кошику  од. на суму  грн.
NCP3337MN500GEVB ncp3337-d.pdf
NCP3337MN500GEVB
Виробник: onsemi
Description: BOARD EVALUATION NCP3337 5.0V
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP3337
Supplied Contents: Board(s)
Channels per IC: 1 - Single
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NCP3337MNADJGEVB NCP3337MNADJGEVB_Web.pdf
NCP3337MNADJGEVB
Виробник: onsemi
Description: BOARD EVALUATION NCP3337 ADJ
Packaging: Box
Voltage - Output: 1.25V ~ 10V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP3337
Supplied Contents: Board(s)
Channels per IC: 1 - Single
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2901.28 грн
В кошику  од. на суму  грн.
NCP508SQ15T1GEVB ncp508-d.pdf
NCP508SQ15T1GEVB
Виробник: onsemi
Description: EVAL BOARD FOR NCP508
Packaging: Bulk
Voltage - Output: 1.5V
Voltage - Input: 5V
Current - Output: 50mA
Contents: Board(s)
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP508
Supplied Contents: Board(s)
Channels per IC: 1 - Single
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NCP508SQ33T1GEVB ncp508-d.pdf
NCP508SQ33T1GEVB
Виробник: onsemi
Description: EVAL BOARD FOR NCP508
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 5V
Current - Output: 50mA
Contents: Board(s)
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP508
Supplied Contents: Board(s)
Channels per IC: 1 - Single
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В кошику  од. на суму  грн.
NCP580EVB ncp580.pdf
NCP580EVB
Виробник: onsemi
Description: EVAL BOARD FOR NCP580
Packaging: Bulk
Voltage - Output: 2.8V
Voltage - Input: 1.5V ~ 4V
Current - Output: 120mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: NCP580
Channels per IC: 1 - Single
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NCP59302DSADGEVB ncp59302-d.pdf
NCP59302DSADGEVB
Виробник: onsemi
Description: BOARD EVALUATION NCP59302 REG
Packaging: Bulk
Voltage - Output: 2.5V
Current - Output: 3A
Regulator Type: Positive Adjustable
Board Type: Fully Populated
Utilized IC / Part: NCP59302
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5236.21 грн
В кошику  од. на суму  грн.
NCS2553DGEVB ncs2553-d.pdf
NCS2553DGEVB
Виробник: onsemi
Description: EVAL BOARD FOR NCS2553
Packaging: Bulk
Function: Amplifier, Triple
Type: Video
Contents: Board(s)
Utilized IC / Part: NCS2553
Supplied Contents: Board(s)
Primary Attributes: Gain 6dB, Reconstruction Filters
Secondary Attributes: AC- or DC-Coupled Inputs and Outputs
Embedded: No
Part Status: Not For New Designs
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NCS2563DGEVB ncs2563-d.pdf
NCS2563DGEVB
Виробник: onsemi
Description: EVAL BOARD FOR NCS2563
Packaging: Bulk
Function: Amplifier, Triple
Type: Video
Contents: Board(s)
Utilized IC / Part: NCS2563
Supplied Contents: Board(s)
Primary Attributes: Gain 6dB, Reconstruction Filters
Secondary Attributes: AC- or DC-Coupled Inputs and Outputs
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7537.63 грн
В кошику  од. на суму  грн.
NCV7680PWR22GEVB ncv7680-d.pdf
NCV7680PWR22GEVB
Виробник: onsemi
Description: BOARD EVALUATION NCV7680
Features: PWM Brightness control
Packaging: Bulk
Utilized IC / Part: NCV7680
Supplied Contents: Board(s)
Outputs and Type: 8, Non-Isolated
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NCV8537MN180GEVB ncv8537-d.pdf
NCV8537MN180GEVB
Виробник: onsemi
Description: EVAL BOARD FOR NCV8537
Packaging: Bulk
Voltage - Output: 1.8V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: NCV8537
Channels per IC: 1 - Single
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В кошику  од. на суму  грн.
15GN01CA-TB-E ena1098-d.pdf
15GN01CA-TB-E
Виробник: onsemi
Description: RF TRANS NPN 8V 1.5GHZ 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Supplier Device Package: 3-CP
товару немає в наявності
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2SA2099 2SA2099%2C%202SC5888.pdf
2SA2099
Виробник: onsemi
Description: TRANS PNP 50V 10A TO-220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TO-220ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
2SA2125-TD-E 2sa2125-d.pdf
2SA2125-TD-E
Виробник: onsemi
Description: TRANS PNP 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
на замовлення 62000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+15.52 грн
2000+13.54 грн
3000+12.83 грн
5000+11.29 грн
7000+10.84 грн
10000+10.41 грн
25000+9.30 грн
50000+9.13 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2SA2126-E en7990-d.pdf
2SA2126-E
Виробник: onsemi
Description: TRANS PNP 50V 3A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SB1124T-TD-E en2019-d.pdf
2SB1124T-TD-E
Виробник: onsemi
Description: TRANS PNP 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товару немає в наявності
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2SB1143S 2SB1143%2C2SD1683.pdf
2SB1143S
Виробник: onsemi
Description: TRANS PNP 50V 4A TO126ML
Packaging: Bag
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
товару немає в наявності
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2SB1143T 2SB1143,2SD1683.pdf
2SB1143T
Виробник: onsemi
Description: TRANS PNP 50V 4A TO126ML
Packaging: Bag
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
товару немає в наявності
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2SB1202T-TL-E
2SB1202T-TL-E
Виробник: onsemi
Description: TRANS PNP 50V 3A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
В кошику  од. на суму  грн.
2SC4731S-AY
2SC4731S-AY
Виробник: onsemi
Description: TRANS NPN 100V 4A FLP
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 No Tab
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: FLP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
товару немає в наявності
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2SC4731T-AY
2SC4731T-AY
Виробник: onsemi
Description: TRANS NPN 100V 4A FLP
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 No Tab
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: FLP
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
товару немає в наявності
В кошику  од. на суму  грн.
2SC5226A-4-TL-E 2sc5226a-d.pdf
2SC5226A-4-TL-E
Виробник: onsemi
Description: RF TRANS NPN 10V 7GHZ SC-70 MCP3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: SC-70 / MCP3
Part Status: Active
товару немає в наявності
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2SC5226A-5-TL-E 2sc5226a-d.pdf
2SC5226A-5-TL-E
Виробник: onsemi
Description: RF TRANS NPN 10V 7GHZ 3MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: 3-MCP
Part Status: Active
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.46 грн
6000+8.73 грн
9000+7.86 грн
30000+7.27 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
2SC5227A-5-TB-E 2sc5227a-d.pdf
2SC5227A-5-TB-E
Виробник: onsemi
Description: RF TRANS NPN 10V 7GHZ 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: 3-CP
товару немає в наявності
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2SC5231A-8-TL-E 2SC5231A.pdf
2SC5231A-8-TL-E
Виробник: onsemi
Description: RF TRANS NPN 10V 7GHZ SMCP
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: SMCP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2SC5347AF-TD-E ena1087-d.pdf
2SC5347AF-TD-E
Виробник: onsemi
Description: RF TRANS NPN 12V 4.7GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 8dB
Power - Max: 1.3W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V
Frequency - Transition: 4.7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: PCP
товару немає в наявності
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2SC5488A-TL-H 2sc5488a-d.pdf
2SC5488A-TL-H
Виробник: onsemi
Description: RF TRANS NPN 10V 7GHZ 3-SSFP
Packaging: Tape & Reel (TR)
Package / Case: SC-81
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: 3-SSFP
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+8.99 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
2SC5551AE-TD-E 2sc5551a-d.pdf
2SC5551AE-TD-E
Виробник: onsemi
Description: RF TRANS NPN 30V 3.5GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 1.3W
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: PCP
Part Status: Obsolete
товару немає в наявності
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2SC5551AF-TD-E 2sc5551a-d.pdf
2SC5551AF-TD-E
Виробник: onsemi
Description: RF TRANS NPN 30V 3.5GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 1.3W
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: PCP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2SC5888 2SA2099%2C%202SC5888.pdf
2SC5888
Виробник: onsemi
Description: TRANS NPN 50V 10A TO-220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-220ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
2SC5964-TD-E 2sa2125-d.pdf
2SC5964-TD-E
Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+16.56 грн
2000+14.47 грн
3000+13.71 грн
5000+12.07 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2SC6094-TD-E ena0410-d.pdf
2SC6094-TD-E
Виробник: onsemi
Description: TRANS NPN 60V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
товару немає в наявності
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2SC6097-E 2sc6097-d.pdf
2SC6097-E
Виробник: onsemi
Description: TRANS NPN 60V 3A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
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2SC6097-TL-E 2sc6097-d.pdf
2SC6097-TL-E
Виробник: onsemi
Description: TRANS NPN 60V 3A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
на замовлення 23800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
700+27.53 грн
1400+24.16 грн
2100+22.96 грн
3500+20.28 грн
4900+19.53 грн
7000+18.80 грн
17500+17.41 грн
Мінімальне замовлення: 700
В кошику  од. на суму  грн.
2SD1624T-TD-E en2019-d.pdf
2SD1624T-TD-E
Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+20.47 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2SD1802S-TL-E 2sb1202-d.pdf
2SD1802S-TL-E
Виробник: onsemi
Description: TRANS NPN 50V 3A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SD1802T-TL-E 2sb1202-d.pdf
2SD1802T-TL-E
Виробник: onsemi
Description: TRANS NPN 50V 3A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SD1816S-TL-E 2sb1216_2sd1816-d.pdf
2SD1816S-TL-E
Виробник: onsemi
Description: TRANS NPN 100V 4A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
700+26.55 грн
1400+23.28 грн
Мінімальне замовлення: 700
В кошику  од. на суму  грн.
2SD1816T-TL-E 2sb1216_2sd1816-d.pdf
2SD1816T-TL-E
Виробник: onsemi
Description: TRANS NPN 100V 4A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SJ652
2SJ652
Виробник: onsemi
Description: MOSFET P-CH 60V 28A TO220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V
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2SK3557-6-TB-E 2sk3557-d.pdf
2SK3557-6-TB-E
Виробник: onsemi
Description: JFET N-CH 5V 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 50mA
Mounting Type: Surface Mount
Configuration: N-Channel
Operating Temperature: 150°C (TJ)
Power - Output: 200mW
Technology: JFET
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Noise Figure: 1dB
Voltage - Breakdown (V(BR)GSS): 15 V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: 3-CP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Voltage - Rated: 15 V
Power - Max: 200 mW
Voltage - Test: 5 V
Current - Test: 1 mA
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 5 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.91 грн
6000+10.50 грн
9000+10.00 грн
Мінімальне замовлення: 3000
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2SK3703
2SK3703
Виробник: onsemi
Description: MOSFET N-CH 60V 30A TO220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V
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2SK3704 2SK3704.pdf
2SK3704
Виробник: onsemi
Description: MOSFET N-CH 60V 45A TO220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 23A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 20 V
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2SK3745LS 2sk3745ls-d.pdf
2SK3745LS
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
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2SK3746 2sk3746-d.pdf
2SK3746
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 110W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
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2SK3747 2sk3747-d.pdf
2SK3747
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A TO3PML
Packaging: Tray
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Supplier Device Package: TO-3PML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±35V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
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2SK3747-MG8
2SK3747-MG8
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A TO3PML
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Supplier Device Package: TO-3PML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±35V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
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2SK3748 2SK3748.pdf
2SK3748
Виробник: onsemi
Description: MOSFET N-CH 1500V 4A TO3PML
Packaging: Tray
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 2A, 10V
Power Dissipation (Max): 3W (Ta), 65W (Tc)
Supplier Device Package: TO-3PML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
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2SK3796-3-TL-E 2SK3796.pdf
2SK3796-3-TL-E
Виробник: onsemi
Description: JFET N-CH 10MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
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2SK4065-DL-E
2SK4065-DL-E
Виробник: onsemi
Description: MOSFET N-CH 75V 100A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: SMP-FD
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
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2SK4065-E
2SK4065-E
Виробник: onsemi
Description: MOSFET N-CH 75V 100A SMP
Packaging: Bag
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: SMP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
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2SK4066-E
2SK4066-E
Виробник: onsemi
Description: MOSFET N-CH 60V 100A SMP
Packaging: Bag
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: SMP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
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2SK4087LS 2SK4087LS.pdf
2SK4087LS
Виробник: onsemi
Description: MOSFET N-CH 600V 9.2A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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2SK4088LS 2SK4088LS_May2013.pdf
2SK4088LS
Виробник: onsemi
Description: MOSFET N-CH 650V 7.5A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
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2SK4089LS 2SK4089LS.pdf
2SK4089LS
Виробник: onsemi
Description: MOSFET N-CH 650V 8.5A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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2SK4117LS 2SK4117LS.pdf
2SK4117LS
Виробник: onsemi
Description: MOSFET N-CH 400V 10.4A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 30 V
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2SK4126 2SK4126.pdf
2SK4126
Виробник: onsemi
Description: MOSFET N-CH 650V 15A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товару немає в наявності
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2SK4177-DL-E ena0869-d.pdf
2SK4177-DL-E
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 80W (Tc)
Supplier Device Package: SMP-FD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
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2SK4210 2SK4210.pdf
2SK4210
Виробник: onsemi
Description: MOSFET N-CH 900V 10A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 190W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
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