| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| SZ1SMB5913BT3G | ONSEMI |
 Category: SMD Zener diodesDescription: Diode: Zener; 3W; 3.3V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMB59xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N5366BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 39V; bulk; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 39V Mounting: THT Tolerance: ±5% Case: CASE017AA Kind of package: bulk Semiconductor structure: single diode Manufacturer series: 1N53xxB |
на замовлення 1445 шт: термін постачання 14-30 дні (днів) |
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| 1N5366BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 39V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 39V Mounting: THT Tolerance: ±5% Case: CASE017AA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC33064D-5R2G | ONSEMI |
 Category: Supervisor circuitsDescription: IC: supervisor circuit; open drain; Active logical level: low Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR); voltage detector Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Number of channels: 1 Kind of RESET output: open drain Supply voltage: 6.5V Active logical level: low Threshold on-voltage: 4.61V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
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MUN5211T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 60 |
на замовлення 1274 шт: термін постачання 14-30 дні (днів) |
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SMUN5211T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
на замовлення 38 шт: термін постачання 14-30 дні (днів) |
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SMUN5211T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NSVMUN5211DW1T2G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ Manufacturer standard package: 3000pcs. Current gain: 35...60 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NC7SU04M5X | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 1uA Type of integrated circuit: digital Case: SOT23-5 Supply voltage: 2...6V DC Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 1µA Number of inputs: 1 Kind of gate: NOT Number of channels: single; 1 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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MM3Z3V0ST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G |
на замовлення 810 шт: термін постачання 14-30 дні (днів) |
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MMSZ5225BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 2484 шт: термін постачання 14-30 дні (днів) |
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MMSZ4683T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; single diode; reel,tape Mounting: SMD Manufacturer series: MMSZ4xxTxG Power dissipation: 0.5W Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123 Zener voltage: 3V Type of diode: Zener Tolerance: ±5% |
на замовлення 59 шт: термін постачання 14-30 дні (днів) |
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SZMMSZ4683T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; single diode; reel,tape Mounting: SMD Manufacturer series: MMSZ4xxTxG Power dissipation: 0.5W Application: automotive industry Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123 Zener voltage: 3V Type of diode: Zener Tolerance: ±5% |
на замовлення 2835 шт: термін постачання 14-30 дні (днів) |
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| MM5Z3V0T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; SOD523F; reel,tape; single diode; MM5Z Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: reel; tape Case: SOD523F Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MM5Z |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZMM5Z3V0T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; SOD523F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: reel; tape Case: SOD523F Mounting: SMD Tolerance: ±7% Semiconductor structure: single diode Manufacturer series: MM5ZxxT1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBC115EDXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...150 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 100kΩ Base-emitter resistor: 100kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| S3MB | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMB; Ufmax: 1.15V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.15V Kind of package: reel; tape Reverse recovery time: 1.5µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| EFC4627R-TR | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; N; 12V; 6A; 1.4W; SMD4 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Technology: PowerTrench® Gate charge: 13.4nC Power dissipation: 1.4W Drain current: 6A Gate-source voltage: 10V Drain-source voltage: 12V Polarisation: N Case: SMD4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| HUF76639S3ST | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 180W; TO263AB Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: TO263AB Polarisation: unipolar Gate charge: 71nC On-state resistance: 26mΩ Gate-source voltage: ±16V Drain current: 50A Drain-source voltage: 100V Power dissipation: 180W |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||||
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MUN5133DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 4.7kΩ Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Kind of transistor: BRT Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.187W Collector-emitter voltage: 50V Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
| NSVMUN5133DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 4.7kΩ Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Kind of transistor: BRT Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.385W Collector-emitter voltage: 50V Quantity in set/package: 3000pcs. Current gain: 80...140 Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Application: automotive industry Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FT7522L6X | ONSEMI |
Category: Counters/dividers Description: IC: supervisor circuit; voltage detector; open drain; MicroPak6 Supply voltage: 1.65...5V Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: -40...85°C Case: MicroPak6 Kind of integrated circuit: voltage detector Kind of RESET output: open drain Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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LM258N | ONSEMI |
Category: THT operational amplifiers Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8 Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Number of channels: dual; 2 Mounting: THT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: DIP8 Operating temperature: -40...105°C Slew rate: 0.6V/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDP2572 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 20A Power dissipation: 135W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 146mΩ Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
на замовлення 98 шт: термін постачання 14-30 дні (днів) |
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FDP2552 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 26A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 97mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NCV2003SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 1; 1.7÷5.5VDC; SOT23-5; 4mV Type of integrated circuit: operational amplifier Bandwidth: 7MHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 1.7...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Integrated circuit features: low voltage; rail-to-rail output Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Input offset voltage: 4mV Slew rate: 8V/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV20032DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; SO8; 4mV; IB: 1pA Type of integrated circuit: operational amplifier Bandwidth: 7MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 1.7...5.5V DC Case: SO8 Operating temperature: -40...125°C Integrated circuit features: low voltage; rail-to-rail output Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Input offset voltage: 4mV Slew rate: 8V/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCS20282FCTTAG | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 2; 2.5÷5.5VDC; WLCSP9; 1.5mV Type of integrated circuit: operational amplifier Bandwidth: 7MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 2.5...5.5V DC Case: WLCSP9 Operating temperature: -40...125°C Integrated circuit features: rail-to-rail Kind of package: reel; tape Input bias current: 800pA Input offset current: 10pA Input offset voltage: 1.5mV Slew rate: 5V/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV20032DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; Micro8; 4mV Type of integrated circuit: operational amplifier Bandwidth: 7MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 1.7...5.5V DC Case: Micro8 Operating temperature: -40...125°C Integrated circuit features: low voltage; rail-to-rail output Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Input offset voltage: 4mV Slew rate: 8V/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBRS130T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.6V Max. off-state voltage: 30V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB |
на замовлення 1988 шт: термін постачання 14-30 дні (днів) |
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MBRS120T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape Mounting: SMD Max. forward voltage: 0.6V Max. off-state voltage: 20V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying |
на замовлення 58 шт: термін постачання 14-30 дні (днів) |
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| FOD8480 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V Type of optocoupler: optocoupler Mounting: SMD Case: SOP6 Output voltage: -0.5...35V Turn-off time: 10ns Turn-on time: 15ns Number of channels: 1 Max. off-state voltage: 5V Insulation voltage: 5kV Manufacturer series: FOD848x Slew rate: 40kV/μs |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||||
| EMX1DXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.357W Case: SOT563 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVEMX1DXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.357W Case: SOT563 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 74LVT245WMX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; BiCMOS; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: BiCMOS Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2.7...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1SMB5940BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 43V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Type of diode: Zener Power dissipation: 3W Zener voltage: 43V Manufacturer series: 1SMB59xxB Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1SMA5940BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 43V; SMD; SMA; reel,tape; single diode Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 43V Manufacturer series: 1SMA59xxBT3G Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SZ1SMB5940BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 43V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Type of diode: Zener Power dissipation: 3W Zener voltage: 43V Manufacturer series: 1SMB59xxB Application: automotive industry Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZ1SMA5940BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 43V; SMD; SMA; reel,tape; single diode Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 43V Manufacturer series: 1SMA59xxBT3G Application: automotive industry Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| HGTD1N120BNS9A | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 2.7A Power dissipation: 60W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 6A Mounting: SMD Gate charge: 21nC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| MMBFJ175 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 7mA Power dissipation: 0.225W Case: SOT23 On-state resistance: 125Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA Gate-source voltage: 30V |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||||||
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2SK932-24-TB-E | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 14.5mA Power dissipation: 0.2W Case: SOT23 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA Drain-source voltage: 15V |
на замовлення 105 шт: термін постачання 14-30 дні (днів) |
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2SK932-23-TB-E | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 10mA Power dissipation: 0.2W Case: SOT23 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FSA2275UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape Operating temperature: -40...85°C Supply voltage: 2.5...5.5V DC Type of integrated circuit: analog switch Kind of output: SPDT x2 Kind of package: reel; tape Case: UMLP12 Number of channels: 2 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FSA2259UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; CMOS,TTL Mounting: SMD Case: UMLP10 Operating temperature: -40...85°C Kind of output: SPDT x2 Supply voltage: 1.65...4.4V DC Number of channels: 2 Type of integrated circuit: analog switch Technology: CMOS; TTL |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FSA2268L10X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.3VDC; TTL; OUT: SPDT x2 Mounting: SMD Supply voltage: 1.65...4.3V DC Type of integrated circuit: analog switch Kind of output: SPDT x2 Operating temperature: -40...85°C Technology: TTL Case: MicroPak10 Number of channels: 2 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FSA2268UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.3VDC; reel,tape; 500nA; TTL Mounting: SMD Supply voltage: 1.65...4.3V DC Type of integrated circuit: analog switch Kind of output: SPDT x2 Operating temperature: -40...85°C Technology: TTL Quiescent current: 500nA Kind of package: reel; tape Case: UMLP10 Number of channels: 2 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FSA2275AUMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape Operating temperature: -40...85°C Supply voltage: 2.5...5.5V DC Type of integrated circuit: analog switch Kind of output: SPDT x2 Kind of package: reel; tape Case: UMLP12 Number of channels: 2 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FSA2276UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Type of integrated circuit: analog switch Kind of output: SPDT x2 Kind of package: reel; tape Case: UMLP12 Number of channels: 2 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NV25320DTHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Operating voltage: 2.5...5.5V Kind of memory: EEPROM Mounting: SMD Access time: 40ns Operating temperature: -40...150°C Clock frequency: 10MHz Memory: 32kb EEPROM Kind of interface: serial Memory organisation: 4kx8bit Kind of package: reel; tape Case: TSSOP8 Interface: SPI |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| PRISM1M-AR0830CSSC130110-GEVB | ONSEMI |
Category: Microchip development kits Description: PRISM1M-AR0830CSSC130110-GEVB |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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| PRISM1M-AR1223NPSC130110-GEVB | ONSEMI |
Category: Unclassified Description: PRISM1M-AR1223NPSC130110-GEVB |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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BSR14 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.8A; 0.35W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.8A Case: SOT23; TO236AB Mounting: SMD Power dissipation: 0.35W Kind of package: reel; tape Frequency: 300MHz |
на замовлення 8130 шт: термін постачання 14-30 дні (днів) |
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| NTMS4177PR2G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11.4A; Idm: -46A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -11.4A Pulsed drain current: -46A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
 |
SBE805-TL-W | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT25; SMD; 30V; 0.5A; 10ns; reel,tape Capacitance: 16pF Mounting: SMD Kind of package: reel; tape Type of diode: Schottky switching Case: SOT25 Reverse recovery time: 10ns Leakage current: 30µA Load current: 0.5A Max. forward voltage: 0.55V Max. forward impulse current: 5A Max. off-state voltage: 30V Semiconductor structure: double independent |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
 |
DTC123JET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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|
DTC123TET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2/0.3W Case: SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Current gain: 160...350 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| DTC123JM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 Quantity in set/package: 8000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
MURS140T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMB; Ufmax: 1.25V; reel,tape Reverse recovery time: 75ns Mounting: SMD Max. forward voltage: 1.25V Max. off-state voltage: 0.4kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: rectifying |
на замовлення 1076 шт: термін постачання 14-30 дні (днів) |
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MURS105T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 0.875V Kind of package: reel; tape |
на замовлення 2418 шт: термін постачання 14-30 дні (днів) |
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| SZ1SMB5913BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| 1N5366BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 39V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 39V
Mounting: THT
Tolerance: ±5%
Case: CASE017AA
Kind of package: bulk
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 39V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 39V
Mounting: THT
Tolerance: ±5%
Case: CASE017AA
Kind of package: bulk
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 1445 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.42 грн |
| 18+ | 23.99 грн |
| 21+ | 20.88 грн |
| 100+ | 13.92 грн |
| 250+ | 12.92 грн |
| 1N5366BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 39V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 39V
Mounting: THT
Tolerance: ±5%
Case: CASE017AA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 39V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 39V
Mounting: THT
Tolerance: ±5%
Case: CASE017AA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
товару немає в наявності
В кошику
од. на суму грн.
| MC33064D-5R2G |
|
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of channels: 1
Kind of RESET output: open drain
Supply voltage: 6.5V
Active logical level: low
Threshold on-voltage: 4.61V
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of channels: 1
Kind of RESET output: open drain
Supply voltage: 6.5V
Active logical level: low
Threshold on-voltage: 4.61V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MUN5211T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 60
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 60
на замовлення 1274 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.23 грн |
| 93+ | 4.53 грн |
| 124+ | 3.39 грн |
| 139+ | 3.04 грн |
| 500+ | 2.43 грн |
| 1000+ | 2.19 грн |
| SMUN5211T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 38+ | 10.90 грн |
| SMUN5211T3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| NSVMUN5211DW1T2G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 35...60
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 35...60
товару немає в наявності
В кошику
од. на суму грн.
| NC7SU04M5X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 1uA
Type of integrated circuit: digital
Case: SOT23-5
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 1µA
Number of inputs: 1
Kind of gate: NOT
Number of channels: single; 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 1uA
Type of integrated circuit: digital
Case: SOT23-5
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 1µA
Number of inputs: 1
Kind of gate: NOT
Number of channels: single; 1
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 8.13 грн |
| 76+ | 5.54 грн |
| 90+ | 4.70 грн |
| 112+ | 3.76 грн |
| 158+ | 2.66 грн |
| 250+ | 2.31 грн |
| MM3Z3V0ST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 810 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 84+ | 5.42 грн |
| 109+ | 3.86 грн |
| 122+ | 3.44 грн |
| 191+ | 2.21 грн |
| 250+ | 1.79 грн |
| 500+ | 1.75 грн |
| MMSZ5225BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 2484 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.93 грн |
| 76+ | 5.54 грн |
| 96+ | 4.40 грн |
| 130+ | 3.24 грн |
| 160+ | 2.63 грн |
| 200+ | 2.22 грн |
| 500+ | 1.87 грн |
| 1000+ | 1.70 грн |
| 1500+ | 1.64 грн |
| MMSZ4683T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; single diode; reel,tape
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 3V
Type of diode: Zener
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; single diode; reel,tape
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 3V
Type of diode: Zener
Tolerance: ±5%
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 59+ | 6.71 грн |
| SZMMSZ4683T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; single diode; reel,tape
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 3V
Type of diode: Zener
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; single diode; reel,tape
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 3V
Type of diode: Zener
Tolerance: ±5%
на замовлення 2835 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.77 грн |
| 30+ | 14.09 грн |
| 35+ | 12.08 грн |
| 100+ | 7.36 грн |
| 500+ | 5.49 грн |
| 1000+ | 4.91 грн |
| MM5Z3V0T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD523F; reel,tape; single diode; MM5Z
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM5Z
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD523F; reel,tape; single diode; MM5Z
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM5Z
товару немає в наявності
В кошику
од. на суму грн.
| SZMM5Z3V0T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±7%
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±7%
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| NSBC115EDXV6T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...150
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...150
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
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| S3MB |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMB; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Kind of package: reel; tape
Reverse recovery time: 1.5µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMB; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Kind of package: reel; tape
Reverse recovery time: 1.5µs
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| EFC4627R-TR |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; N; 12V; 6A; 1.4W; SMD4
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Gate charge: 13.4nC
Power dissipation: 1.4W
Drain current: 6A
Gate-source voltage: 10V
Drain-source voltage: 12V
Polarisation: N
Case: SMD4
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; N; 12V; 6A; 1.4W; SMD4
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Gate charge: 13.4nC
Power dissipation: 1.4W
Drain current: 6A
Gate-source voltage: 10V
Drain-source voltage: 12V
Polarisation: N
Case: SMD4
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| HUF76639S3ST |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 180W; TO263AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263AB
Polarisation: unipolar
Gate charge: 71nC
On-state resistance: 26mΩ
Gate-source voltage: ±16V
Drain current: 50A
Drain-source voltage: 100V
Power dissipation: 180W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 180W; TO263AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263AB
Polarisation: unipolar
Gate charge: 71nC
On-state resistance: 26mΩ
Gate-source voltage: ±16V
Drain current: 50A
Drain-source voltage: 100V
Power dissipation: 180W
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Мінімальне замовлення: 800 шт
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| MUN5133DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 4.7kΩ
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 4.7kΩ
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
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Мінімальне замовлення: 3000 шт
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| NSVMUN5133DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 4.7kΩ
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.385W
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Current gain: 80...140
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 4.7kΩ
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.385W
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Current gain: 80...140
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Polarisation: bipolar
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| FT7522L6X |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: supervisor circuit; voltage detector; open drain; MicroPak6
Supply voltage: 1.65...5V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
Case: MicroPak6
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Mounting: SMD
Category: Counters/dividers
Description: IC: supervisor circuit; voltage detector; open drain; MicroPak6
Supply voltage: 1.65...5V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
Case: MicroPak6
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Mounting: SMD
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| LM258N |
|
Виробник: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Operating temperature: -40...105°C
Slew rate: 0.6V/μs
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Operating temperature: -40...105°C
Slew rate: 0.6V/μs
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| FDP2572 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 20A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 20A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 203.21 грн |
| 10+ | 121.60 грн |
| 50+ | 93.09 грн |
| FDP2552 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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| NCV2003SN2T1G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 1; 1.7÷5.5VDC; SOT23-5; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 1; 1.7÷5.5VDC; SOT23-5; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
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| NCV20032DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; SO8; 4mV; IB: 1pA
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; SO8; 4mV; IB: 1pA
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
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| NCS20282FCTTAG |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 2.5÷5.5VDC; WLCSP9; 1.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: WLCSP9
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Input bias current: 800pA
Input offset current: 10pA
Input offset voltage: 1.5mV
Slew rate: 5V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 2.5÷5.5VDC; WLCSP9; 1.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: WLCSP9
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Input bias current: 800pA
Input offset current: 10pA
Input offset voltage: 1.5mV
Slew rate: 5V/μs
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| NCV20032DMR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; Micro8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: Micro8
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; Micro8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: Micro8
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
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| MBRS130T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.6V
Max. off-state voltage: 30V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.6V
Max. off-state voltage: 30V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
на замовлення 1988 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.80 грн |
| 22+ | 19.12 грн |
| 25+ | 16.77 грн |
| 50+ | 13.08 грн |
| 100+ | 11.99 грн |
| 500+ | 10.06 грн |
| 1000+ | 9.31 грн |
| MBRS120T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.6V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.6V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
на замовлення 58 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.67 грн |
| 15+ | 29.52 грн |
| 50+ | 21.13 грн |
| FOD8480 |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Case: SOP6
Output voltage: -0.5...35V
Turn-off time: 10ns
Turn-on time: 15ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Manufacturer series: FOD848x
Slew rate: 40kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Case: SOP6
Output voltage: -0.5...35V
Turn-off time: 10ns
Turn-on time: 15ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Manufacturer series: FOD848x
Slew rate: 40kV/μs
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Мінімальне замовлення: 2000 шт
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| EMX1DXV6T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
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| NSVEMX1DXV6T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| 74LVT245WMX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; BiCMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: BiCMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2.7...3.6V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; BiCMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: BiCMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2.7...3.6V DC
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| 1SMB5940BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxB
Semiconductor structure: single diode
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| 1SMA5940BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 43V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 43V
Manufacturer series: 1SMA59xxBT3G
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 43V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 43V
Manufacturer series: 1SMA59xxBT3G
Semiconductor structure: single diode
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| SZ1SMB5940BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxB
Application: automotive industry
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxB
Application: automotive industry
Semiconductor structure: single diode
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| SZ1SMA5940BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 43V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 43V
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 43V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 43V
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Semiconductor structure: single diode
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| HGTD1N120BNS9A |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 2.7A
Power dissipation: 60W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 6A
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 2.7A
Power dissipation: 60W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 6A
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
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| MMBFJ175 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 7mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 125Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 7mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 125Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
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Мінімальне замовлення: 5 шт
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| 2SK932-24-TB-E |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 14.5mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Drain-source voltage: 15V
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 14.5mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Drain-source voltage: 15V
на замовлення 105 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.42 грн |
| 17+ | 24.74 грн |
| 25+ | 21.72 грн |
| 100+ | 19.21 грн |
| 2SK932-23-TB-E |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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| FSA2275UMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Supply voltage: 2.5...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Number of channels: 2
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Supply voltage: 2.5...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Number of channels: 2
Mounting: SMD
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Мінімальне замовлення: 5000 шт
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| FSA2259UMX |
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; CMOS,TTL
Mounting: SMD
Case: UMLP10
Operating temperature: -40...85°C
Kind of output: SPDT x2
Supply voltage: 1.65...4.4V DC
Number of channels: 2
Type of integrated circuit: analog switch
Technology: CMOS; TTL
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; CMOS,TTL
Mounting: SMD
Case: UMLP10
Operating temperature: -40...85°C
Kind of output: SPDT x2
Supply voltage: 1.65...4.4V DC
Number of channels: 2
Type of integrated circuit: analog switch
Technology: CMOS; TTL
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Мінімальне замовлення: 5000 шт
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| FSA2268L10X |
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.3VDC; TTL; OUT: SPDT x2
Mounting: SMD
Supply voltage: 1.65...4.3V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Operating temperature: -40...85°C
Technology: TTL
Case: MicroPak10
Number of channels: 2
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.3VDC; TTL; OUT: SPDT x2
Mounting: SMD
Supply voltage: 1.65...4.3V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Operating temperature: -40...85°C
Technology: TTL
Case: MicroPak10
Number of channels: 2
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Мінімальне замовлення: 5000 шт
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| FSA2268UMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.3VDC; reel,tape; 500nA; TTL
Mounting: SMD
Supply voltage: 1.65...4.3V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Operating temperature: -40...85°C
Technology: TTL
Quiescent current: 500nA
Kind of package: reel; tape
Case: UMLP10
Number of channels: 2
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.3VDC; reel,tape; 500nA; TTL
Mounting: SMD
Supply voltage: 1.65...4.3V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Operating temperature: -40...85°C
Technology: TTL
Quiescent current: 500nA
Kind of package: reel; tape
Case: UMLP10
Number of channels: 2
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Мінімальне замовлення: 5000 шт
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| FSA2275AUMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Supply voltage: 2.5...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Number of channels: 2
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Supply voltage: 2.5...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Number of channels: 2
Mounting: SMD
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Мінімальне замовлення: 5000 шт
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| FSA2276UMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Number of channels: 2
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Number of channels: 2
Mounting: SMD
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Мінімальне замовлення: 5000 шт
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| NV25320DTHFT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Operating voltage: 2.5...5.5V
Kind of memory: EEPROM
Mounting: SMD
Access time: 40ns
Operating temperature: -40...150°C
Clock frequency: 10MHz
Memory: 32kb EEPROM
Kind of interface: serial
Memory organisation: 4kx8bit
Kind of package: reel; tape
Case: TSSOP8
Interface: SPI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Operating voltage: 2.5...5.5V
Kind of memory: EEPROM
Mounting: SMD
Access time: 40ns
Operating temperature: -40...150°C
Clock frequency: 10MHz
Memory: 32kb EEPROM
Kind of interface: serial
Memory organisation: 4kx8bit
Kind of package: reel; tape
Case: TSSOP8
Interface: SPI
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Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PRISM1M-AR0830CSSC130110-GEVB |
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 30294.73 грн |
| PRISM1M-AR1223NPSC130110-GEVB |
|
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 30667.73 грн |
| BSR14 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.8A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.8A
Case: SOT23; TO236AB
Mounting: SMD
Power dissipation: 0.35W
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.8A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.8A
Case: SOT23; TO236AB
Mounting: SMD
Power dissipation: 0.35W
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 8130 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 30.71 грн |
| 22+ | 19.37 грн |
| 26+ | 16.52 грн |
| 50+ | 13.33 грн |
| 100+ | 11.41 грн |
| 500+ | 8.22 грн |
| 1000+ | 7.21 грн |
| 3000+ | 6.04 грн |
| 6000+ | 5.79 грн |
| NTMS4177PR2G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.4A; Idm: -46A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.4A
Pulsed drain current: -46A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.4A; Idm: -46A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.4A
Pulsed drain current: -46A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 2500 шт
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| SBE805-TL-W |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT25; SMD; 30V; 0.5A; 10ns; reel,tape
Capacitance: 16pF
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOT25
Reverse recovery time: 10ns
Leakage current: 30µA
Load current: 0.5A
Max. forward voltage: 0.55V
Max. forward impulse current: 5A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT25; SMD; 30V; 0.5A; 10ns; reel,tape
Capacitance: 16pF
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOT25
Reverse recovery time: 10ns
Leakage current: 30µA
Load current: 0.5A
Max. forward voltage: 0.55V
Max. forward impulse current: 5A
Max. off-state voltage: 30V
Semiconductor structure: double independent
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Мінімальне замовлення: 3000 шт
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| DTC123JET1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
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| DTC123TET1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2/0.3W
Case: SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2/0.3W
Case: SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
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| DTC123JM3T5G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
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| MURS140T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Reverse recovery time: 75ns
Mounting: SMD
Max. forward voltage: 1.25V
Max. off-state voltage: 0.4kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Reverse recovery time: 75ns
Mounting: SMD
Max. forward voltage: 1.25V
Max. off-state voltage: 0.4kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
на замовлення 1076 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.06 грн |
| 28+ | 15.10 грн |
| 31+ | 13.59 грн |
| 50+ | 9.81 грн |
| 100+ | 8.81 грн |
| 500+ | 7.55 грн |
| 1000+ | 7.04 грн |
| MURS105T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.875V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.875V
Kind of package: reel; tape
на замовлення 2418 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 37.03 грн |
| 17+ | 25.49 грн |
| 20+ | 21.97 грн |
| 100+ | 14.17 грн |
| 250+ | 12.41 грн |
| 500+ | 11.15 грн |
| 1000+ | 10.40 грн |