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SB520 SB520 onsemi sb580-d.pdf Description: DIODE SCHOTTKY 20V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товару немає в наявності
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H11AA4SR2VM H11AA4SR2VM onsemi h11aa4m-d.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 51705 шт:
термін постачання 21-31 дні (днів)
5+72.39 грн
10+48.30 грн
100+35.67 грн
500+28.17 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
STK544UC62K-E STK544UC62K-E onsemi stk544uc62k-e-d.pdf Description: IC HALF BRIDGE DRIVER 10A 23SIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-SIP, 19 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 23-SIP-1
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
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STK551U362A-E STK551U362A-E onsemi stk551u362a-e-d.pdf Description: IC HALF BRIDGE DRIVER 10A 29SIP
Packaging: Bulk
Features: Bootstrap Circuit, Status Flag
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 29-SIP
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive
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STK551U392A-E STK551U392A-E onsemi stk551u392a-e-d.pdf Description: IC HALF BRIDGE DRIVER 15A 29SIP
Packaging: Bulk
Features: Bootstrap Circuit, Latch Function, Status Flag
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 15A
Current - Peak Output: 30A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 29-SIP
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+1737.26 грн
10+1537.77 грн
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STK554U362A-E STK554U362A-E onsemi stk554u362a-e-d.pdf Description: IC HALF BRIDGE DRIVER 10A 29SIP
Packaging: Bulk
Features: Bootstrap Circuit, Status Flag
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 29-SIP
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive
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STK554U362C-E STK554U362C-E onsemi stk554u362c-e-d.pdf Description: IC HALF BRIDGE DRIVER 10A 29SIP
Packaging: Bulk
Features: Bootstrap Circuit, Status Flag
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 29-SIP
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive
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FCMT199N60 FCMT199N60 onsemi fcmt199n60-d.pdf Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+175.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDBL86210-F085 FDBL86210-F085 onsemi fdbl86210_f085-d.pdf Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+219.50 грн
Мінімальне замовлення: 2000
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FDMC86259P FDMC86259P onsemi fdmc86259p-d.pdf Description: MOSFET P-CH 150V 3.2A/13A PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 107mOhm @ 3A, 10V
Power Dissipation (Max): 2.3W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 75 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+97.55 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDMD84100 FDMD84100 onsemi fdmd84100-d.pdf Description: MOSFET 2N-CH 100V 7A 8-PQFN
товару немає в наявності
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FDMS86263P FDMS86263P onsemi fdms86263p-d.pdf Description: MOSFET P-CH 150V 4.4A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
на замовлення 28900 шт:
термін постачання 21-31 дні (днів)
3000+100.97 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FL7733MX FL7733MX onsemi FL7733.pdf Description: IC LED DRIVER OFFL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.5V ~ 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SOIC
Voltage - Supply (Max): 30V
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FCMT199N60 FCMT199N60 onsemi fcmt199n60-d.pdf Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
на замовлення 8030 шт:
термін постачання 21-31 дні (днів)
1+417.28 грн
10+288.99 грн
100+208.77 грн
500+194.56 грн
В кошику  од. на суму  грн.
FDBL86210-F085 FDBL86210-F085 onsemi fdbl86210_f085-d.pdf Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Qualification: AEC-Q101
на замовлення 3911 шт:
термін постачання 21-31 дні (днів)
1+527.14 грн
10+341.64 грн
100+247.89 грн
500+198.36 грн
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FDMC86259P FDMC86259P onsemi fdmc86259p-d.pdf Description: MOSFET P-CH 150V 3.2A/13A PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 107mOhm @ 3A, 10V
Power Dissipation (Max): 2.3W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 75 V
на замовлення 13887 шт:
термін постачання 21-31 дні (днів)
2+219.71 грн
10+161.31 грн
100+128.99 грн
500+107.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDMD84100 FDMD84100 onsemi fdmd84100-d.pdf Description: MOSFET 2N-CH 100V 7A 8-PQFN
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
FDMS86263P FDMS86263P onsemi fdms86263p-d.pdf Description: MOSFET P-CH 150V 4.4A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
на замовлення 29409 шт:
термін постачання 21-31 дні (днів)
2+297.21 грн
10+187.96 грн
100+132.23 грн
500+111.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FL7733MX FL7733MX onsemi FL7733.pdf Description: IC LED DRIVER OFFL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.5V ~ 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SOIC
Voltage - Supply (Max): 30V
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FDB024N08BL7 FDB024N08BL7 onsemi fdb024n08bl7-d.pdf Description: MOSFET N-CH 80V 120A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
800+157.26 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
FDB20N50F FDB20N50F onsemi fdb20n50f-d.pdf Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
800+116.52 грн
1600+107.58 грн
Мінімальне замовлення: 800
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FDMC4435BZ-F126 FDMC4435BZ-F126 onsemi fdmc4435bz-d.pdf Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
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FDMC7692S-F126 FDMC7692S-F126 onsemi fdmc7692s-d.pdf Description: MOSFET N-CH 30V 12.5A/18A 8MLP
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FDMC8878_F126 FDMC8878_F126 onsemi FAIR-S-A0002365638-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 9.6A/16.5A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V
Power Dissipation (Max): 2.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
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FDMC8884-F126 FDMC8884-F126 onsemi FDMC8884_RevE4_Jun2014.pdf Description: MOSFET N-CH 30V 9A/15A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V
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FODM3022R4_NF098 FODM3022R4_NF098 onsemi FODM30xx.pdf Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 300µA (Typ)
Supplier Device Package: 4-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 10V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
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FQB5N60CTM-WS FQB5N60CTM-WS onsemi FQB5N60CTM_WS.pdf Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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FQB8N60CTM-WS FQB8N60CTM-WS onsemi fqi8n60c-d.pdf Description: MOSFET N-CH 600V 7.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
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FQD2N60CTM-WS FQD2N60CTM-WS onsemi fqu2n60c-d.pdf Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
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FQD4P40TM-AM002 FQD4P40TM-AM002 onsemi Description: MOSFET P-CH 400V 2.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
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FQD5N60CTM-WS FQD5N60CTM-WS onsemi fqu5n60c-d.pdf Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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MDB10SV MDB10SV onsemi MDB10SV.pdf Description: BRIDGE RECT 1P 1KV 1.2A MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.2 A
Voltage - Forward (Vf) (Max) @ If: 1.015 V @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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FDZ1416NZ FDZ1416NZ onsemi fdz1416nz-d.pdf Description: MOSFET 2N-CH 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.4)
Part Status: Obsolete
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NC7SB3157P6X-F080 NC7SB3157P6X-F080 onsemi NC7SB3157%2C%20FSA3157.pdf Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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NC7SB3157P6X-F40 NC7SB3157P6X-F40 onsemi NC7SB3157%2C%20FSA3157.pdf Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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FQA16N50-F109 FQA16N50-F109 onsemi Description: MOSFET N-CH 500V 16A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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FQU5N50CTU-WS FQU5N50CTU-WS onsemi FQU5N50CTU_WS.pdf Description: MOSFET N-CH 500V 4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
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FDB024N08BL7 FDB024N08BL7 onsemi fdb024n08bl7-d.pdf Description: MOSFET N-CH 80V 120A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
на замовлення 6457 шт:
термін постачання 21-31 дні (днів)
1+368.74 грн
10+265.37 грн
100+185.35 грн
В кошику  од. на суму  грн.
FDB20N50F FDB20N50F onsemi fdb20n50f-d.pdf Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
на замовлення 6978 шт:
термін постачання 21-31 дні (днів)
2+318.50 грн
10+202.47 грн
100+143.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDMC7692S-F126 FDMC7692S-F126 onsemi fdmc7692s-d.pdf Description: MOSFET N-CH 30V 12.5A/18A 8MLP
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FODM3022R4_NF098 FODM3022R4_NF098 onsemi FODM30xx.pdf Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 300µA (Typ)
Supplier Device Package: 4-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 10V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
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FQB5N60CTM-WS FQB5N60CTM-WS onsemi FQB5N60CTM_WS.pdf Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
на замовлення 760 шт:
термін постачання 21-31 дні (днів)
3+165.21 грн
10+102.18 грн
100+69.55 грн
Мінімальне замовлення: 3
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MDB10SV MDB10SV onsemi MDB10SV.pdf Description: BRIDGE RECT 1P 1KV 1.2A MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.2 A
Voltage - Forward (Vf) (Max) @ If: 1.015 V @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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FDZ1416NZ FDZ1416NZ onsemi fdz1416nz-d.pdf Description: MOSFET 2N-CH 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.4)
Part Status: Obsolete
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NC7SB3157P6X-F080 NC7SB3157P6X-F080 onsemi NC7SB3157%2C%20FSA3157.pdf Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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NC7SB3157P6X-F40 NC7SB3157P6X-F40 onsemi NC7SB3157%2C%20FSA3157.pdf Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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ESD8004MUTAG ESD8004MUTAG onsemi esd8004-d.pdf Description: TVS DIODE 3.3VWM 8VC 10UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V (Typ)
Power Line Protection: No
Part Status: Active
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ESD8040MUTAG ESD8040MUTAG onsemi esd8040-d.pdf Description: TVS DIODE 3.3VWM 12VC 18UDFN
Packaging: Tape & Reel (TR)
Package / Case: 18-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 18-UDFN (5.5x1.5)
Unidirectional Channels: 14
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
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ESD8006MUTAG ESD8006MUTAG onsemi esd8006-d.pdf Description: TVS DIODE 3.3VWM 8.4VC 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 8-UDFN (3.3x1.0)
Unidirectional Channels: 6
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.4V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
3000+26.58 грн
6000+25.08 грн
9000+23.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ESD8008MUTAG ESD8008MUTAG onsemi esd8008-d.pdf Description: TVS DIODE 3.3VWM 8.1VC 14UDFN
Packaging: Tape & Reel (TR)
Package / Case: 14-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 14-UDFN (5.5x1.5)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.1V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+19.56 грн
6000+17.64 грн
9000+17.14 грн
15000+15.58 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ESD8104MUTAG ESD8104MUTAG onsemi esd8104-d.pdf Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 117000 шт:
термін постачання 21-31 дні (днів)
3000+12.21 грн
6000+11.70 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ESD8004MUTAG ESD8004MUTAG onsemi esd8004-d.pdf Description: TVS DIODE 3.3VWM 8VC 10UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 1543 шт:
термін постачання 21-31 дні (днів)
5+75.79 грн
10+48.63 грн
100+33.59 грн
500+25.15 грн
1000+23.05 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ESD8040MUTAG ESD8040MUTAG onsemi esd8040-d.pdf Description: TVS DIODE 3.3VWM 12VC 18UDFN
Packaging: Cut Tape (CT)
Package / Case: 18-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 18-UDFN (5.5x1.5)
Unidirectional Channels: 14
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 3522 шт:
термін постачання 21-31 дні (днів)
3+169.47 грн
10+111.12 грн
100+79.31 грн
500+61.20 грн
1000+56.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ESD8006MUTAG ESD8006MUTAG onsemi esd8006-d.pdf Description: TVS DIODE 3.3VWM 8.4VC 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 8-UDFN (3.3x1.0)
Unidirectional Channels: 6
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.4V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 30002 шт:
термін постачання 21-31 дні (днів)
8+44.28 грн
10+33.29 грн
100+31.29 грн
500+27.44 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
ESD8008MUTAG ESD8008MUTAG onsemi esd8008-d.pdf Description: TVS DIODE 3.3VWM 8.1VC 14UDFN
Packaging: Cut Tape (CT)
Package / Case: 14-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 14-UDFN (5.5x1.5)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.1V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 18344 шт:
термін постачання 21-31 дні (днів)
11+32.36 грн
13+25.26 грн
100+21.17 грн
500+19.81 грн
1000+19.74 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
ESD8104MUTAG ESD8104MUTAG onsemi esd8104-d.pdf Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 120227 шт:
термін постачання 21-31 дні (днів)
10+37.47 грн
14+24.93 грн
100+20.03 грн
500+15.93 грн
1000+14.49 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
MG2040MUTAG MG2040MUTAG onsemi mg2040-d.pdf Description: TVS DIODE 5VWM 10VC 18UDFN
Packaging: Cut Tape (CT)
Package / Case: 18-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 18-UDFN (5.5x1.5)
Unidirectional Channels: 14
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: No
Part Status: Active
на замовлення 9247 шт:
термін постачання 21-31 дні (днів)
5+75.79 грн
10+54.45 грн
100+39.16 грн
500+29.50 грн
1000+28.75 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
NIS5132MN2TXG NIS5132MN2TXG onsemi nis5132-d.pdf Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
Part Status: Not For New Designs
на замовлення 8215 шт:
термін постачання 21-31 дні (днів)
5+80.05 грн
10+55.60 грн
25+50.19 грн
100+41.57 грн
250+38.94 грн
500+37.35 грн
1000+35.45 грн
2500+34.09 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
NIS5135MN2TXG NIS5135MN2TXG onsemi nis5135-d.pdf Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.1V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
на замовлення 7081 шт:
термін постачання 21-31 дні (днів)
4+95.38 грн
10+82.17 грн
25+77.97 грн
100+56.19 грн
250+49.66 грн
500+47.04 грн
1000+35.99 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NSBC124EF3T5G NSBC124EF3T5G onsemi dtc124e-d.pdf Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 4316 шт:
термін постачання 21-31 дні (днів)
13+28.10 грн
19+18.04 грн
100+12.15 грн
500+8.83 грн
1000+7.98 грн
2000+7.25 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SB520 sb580-d.pdf
SB520
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
H11AA4SR2VM h11aa4m-d.pdf
H11AA4SR2VM
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 51705 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+72.39 грн
10+48.30 грн
100+35.67 грн
500+28.17 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
STK544UC62K-E stk544uc62k-e-d.pdf
STK544UC62K-E
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 10A 23SIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-SIP, 19 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 23-SIP-1
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
товару немає в наявності
В кошику  од. на суму  грн.
STK551U362A-E stk551u362a-e-d.pdf
STK551U362A-E
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 10A 29SIP
Packaging: Bulk
Features: Bootstrap Circuit, Status Flag
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 29-SIP
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive
товару немає в наявності
В кошику  од. на суму  грн.
STK551U392A-E stk551u392a-e-d.pdf
STK551U392A-E
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 15A 29SIP
Packaging: Bulk
Features: Bootstrap Circuit, Latch Function, Status Flag
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 15A
Current - Peak Output: 30A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 29-SIP
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1737.26 грн
10+1537.77 грн
В кошику  од. на суму  грн.
STK554U362A-E stk554u362a-e-d.pdf
STK554U362A-E
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 10A 29SIP
Packaging: Bulk
Features: Bootstrap Circuit, Status Flag
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 29-SIP
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive
товару немає в наявності
В кошику  од. на суму  грн.
STK554U362C-E stk554u362c-e-d.pdf
STK554U362C-E
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 10A 29SIP
Packaging: Bulk
Features: Bootstrap Circuit, Status Flag
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 29-SIP
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive
товару немає в наявності
В кошику  од. на суму  грн.
FCMT199N60 fcmt199n60-d.pdf
FCMT199N60
Виробник: onsemi
Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+175.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDBL86210-F085 fdbl86210_f085-d.pdf
FDBL86210-F085
Виробник: onsemi
Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+219.50 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
FDMC86259P fdmc86259p-d.pdf
FDMC86259P
Виробник: onsemi
Description: MOSFET P-CH 150V 3.2A/13A PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 107mOhm @ 3A, 10V
Power Dissipation (Max): 2.3W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 75 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+97.55 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDMD84100 fdmd84100-d.pdf
FDMD84100
Виробник: onsemi
Description: MOSFET 2N-CH 100V 7A 8-PQFN
товару немає в наявності
В кошику  од. на суму  грн.
FDMS86263P fdms86263p-d.pdf
FDMS86263P
Виробник: onsemi
Description: MOSFET P-CH 150V 4.4A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
на замовлення 28900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+100.97 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FL7733MX FL7733.pdf
FL7733MX
Виробник: onsemi
Description: IC LED DRIVER OFFL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.5V ~ 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SOIC
Voltage - Supply (Max): 30V
товару немає в наявності
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FCMT199N60 fcmt199n60-d.pdf
FCMT199N60
Виробник: onsemi
Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
на замовлення 8030 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+417.28 грн
10+288.99 грн
100+208.77 грн
500+194.56 грн
В кошику  од. на суму  грн.
FDBL86210-F085 fdbl86210_f085-d.pdf
FDBL86210-F085
Виробник: onsemi
Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Qualification: AEC-Q101
на замовлення 3911 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+527.14 грн
10+341.64 грн
100+247.89 грн
500+198.36 грн
В кошику  од. на суму  грн.
FDMC86259P fdmc86259p-d.pdf
FDMC86259P
Виробник: onsemi
Description: MOSFET P-CH 150V 3.2A/13A PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 107mOhm @ 3A, 10V
Power Dissipation (Max): 2.3W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 75 V
на замовлення 13887 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+219.71 грн
10+161.31 грн
100+128.99 грн
500+107.90 грн
Мінімальне замовлення: 2
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FDMD84100 fdmd84100-d.pdf
FDMD84100
Виробник: onsemi
Description: MOSFET 2N-CH 100V 7A 8-PQFN
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
FDMS86263P fdms86263p-d.pdf
FDMS86263P
Виробник: onsemi
Description: MOSFET P-CH 150V 4.4A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
на замовлення 29409 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+297.21 грн
10+187.96 грн
100+132.23 грн
500+111.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FL7733MX FL7733.pdf
FL7733MX
Виробник: onsemi
Description: IC LED DRIVER OFFL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.5V ~ 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SOIC
Voltage - Supply (Max): 30V
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FDB024N08BL7 fdb024n08bl7-d.pdf
FDB024N08BL7
Виробник: onsemi
Description: MOSFET N-CH 80V 120A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+157.26 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
FDB20N50F fdb20n50f-d.pdf
FDB20N50F
Виробник: onsemi
Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+116.52 грн
1600+107.58 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
FDMC4435BZ-F126 fdmc4435bz-d.pdf
FDMC4435BZ-F126
Виробник: onsemi
Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
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FDMC7692S-F126 fdmc7692s-d.pdf
FDMC7692S-F126
Виробник: onsemi
Description: MOSFET N-CH 30V 12.5A/18A 8MLP
товару немає в наявності
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FDMC8878_F126 FAIR-S-A0002365638-1.pdf?t.download=true&u=5oefqw
FDMC8878_F126
Виробник: onsemi
Description: MOSFET N-CH 30V 9.6A/16.5A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V
Power Dissipation (Max): 2.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
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FDMC8884-F126 FDMC8884_RevE4_Jun2014.pdf
FDMC8884-F126
Виробник: onsemi
Description: MOSFET N-CH 30V 9A/15A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V
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FODM3022R4_NF098 FODM30xx.pdf
FODM3022R4_NF098
Виробник: onsemi
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 300µA (Typ)
Supplier Device Package: 4-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 10V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
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FQB5N60CTM-WS FQB5N60CTM_WS.pdf
FQB5N60CTM-WS
Виробник: onsemi
Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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FQB8N60CTM-WS fqi8n60c-d.pdf
FQB8N60CTM-WS
Виробник: onsemi
Description: MOSFET N-CH 600V 7.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
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FQD2N60CTM-WS fqu2n60c-d.pdf
FQD2N60CTM-WS
Виробник: onsemi
Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
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FQD4P40TM-AM002
FQD4P40TM-AM002
Виробник: onsemi
Description: MOSFET P-CH 400V 2.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
товару немає в наявності
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FQD5N60CTM-WS fqu5n60c-d.pdf
FQD5N60CTM-WS
Виробник: onsemi
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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MDB10SV MDB10SV.pdf
MDB10SV
Виробник: onsemi
Description: BRIDGE RECT 1P 1KV 1.2A MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.2 A
Voltage - Forward (Vf) (Max) @ If: 1.015 V @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
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FDZ1416NZ fdz1416nz-d.pdf
FDZ1416NZ
Виробник: onsemi
Description: MOSFET 2N-CH 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.4)
Part Status: Obsolete
товару немає в наявності
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NC7SB3157P6X-F080 NC7SB3157%2C%20FSA3157.pdf
NC7SB3157P6X-F080
Виробник: onsemi
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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NC7SB3157P6X-F40 NC7SB3157%2C%20FSA3157.pdf
NC7SB3157P6X-F40
Виробник: onsemi
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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FQA16N50-F109
FQA16N50-F109
Виробник: onsemi
Description: MOSFET N-CH 500V 16A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
товару немає в наявності
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FQU5N50CTU-WS FQU5N50CTU_WS.pdf
FQU5N50CTU-WS
Виробник: onsemi
Description: MOSFET N-CH 500V 4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
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FDB024N08BL7 fdb024n08bl7-d.pdf
FDB024N08BL7
Виробник: onsemi
Description: MOSFET N-CH 80V 120A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
на замовлення 6457 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+368.74 грн
10+265.37 грн
100+185.35 грн
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FDB20N50F fdb20n50f-d.pdf
FDB20N50F
Виробник: onsemi
Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
на замовлення 6978 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+318.50 грн
10+202.47 грн
100+143.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDMC7692S-F126 fdmc7692s-d.pdf
FDMC7692S-F126
Виробник: onsemi
Description: MOSFET N-CH 30V 12.5A/18A 8MLP
товару немає в наявності
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FODM3022R4_NF098 FODM30xx.pdf
FODM3022R4_NF098
Виробник: onsemi
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 300µA (Typ)
Supplier Device Package: 4-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 10V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
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FQB5N60CTM-WS FQB5N60CTM_WS.pdf
FQB5N60CTM-WS
Виробник: onsemi
Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
на замовлення 760 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+165.21 грн
10+102.18 грн
100+69.55 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MDB10SV MDB10SV.pdf
MDB10SV
Виробник: onsemi
Description: BRIDGE RECT 1P 1KV 1.2A MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.2 A
Voltage - Forward (Vf) (Max) @ If: 1.015 V @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
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FDZ1416NZ fdz1416nz-d.pdf
FDZ1416NZ
Виробник: onsemi
Description: MOSFET 2N-CH 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.4)
Part Status: Obsolete
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NC7SB3157P6X-F080 NC7SB3157%2C%20FSA3157.pdf
NC7SB3157P6X-F080
Виробник: onsemi
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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NC7SB3157P6X-F40 NC7SB3157%2C%20FSA3157.pdf
NC7SB3157P6X-F40
Виробник: onsemi
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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ESD8004MUTAG esd8004-d.pdf
ESD8004MUTAG
Виробник: onsemi
Description: TVS DIODE 3.3VWM 8VC 10UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V (Typ)
Power Line Protection: No
Part Status: Active
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ESD8040MUTAG esd8040-d.pdf
ESD8040MUTAG
Виробник: onsemi
Description: TVS DIODE 3.3VWM 12VC 18UDFN
Packaging: Tape & Reel (TR)
Package / Case: 18-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 18-UDFN (5.5x1.5)
Unidirectional Channels: 14
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
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ESD8006MUTAG esd8006-d.pdf
ESD8006MUTAG
Виробник: onsemi
Description: TVS DIODE 3.3VWM 8.4VC 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 8-UDFN (3.3x1.0)
Unidirectional Channels: 6
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.4V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+26.58 грн
6000+25.08 грн
9000+23.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ESD8008MUTAG esd8008-d.pdf
ESD8008MUTAG
Виробник: onsemi
Description: TVS DIODE 3.3VWM 8.1VC 14UDFN
Packaging: Tape & Reel (TR)
Package / Case: 14-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 14-UDFN (5.5x1.5)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.1V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+19.56 грн
6000+17.64 грн
9000+17.14 грн
15000+15.58 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ESD8104MUTAG esd8104-d.pdf
ESD8104MUTAG
Виробник: onsemi
Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 117000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.21 грн
6000+11.70 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ESD8004MUTAG esd8004-d.pdf
ESD8004MUTAG
Виробник: onsemi
Description: TVS DIODE 3.3VWM 8VC 10UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 1543 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+75.79 грн
10+48.63 грн
100+33.59 грн
500+25.15 грн
1000+23.05 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ESD8040MUTAG esd8040-d.pdf
ESD8040MUTAG
Виробник: onsemi
Description: TVS DIODE 3.3VWM 12VC 18UDFN
Packaging: Cut Tape (CT)
Package / Case: 18-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 18-UDFN (5.5x1.5)
Unidirectional Channels: 14
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 3522 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+169.47 грн
10+111.12 грн
100+79.31 грн
500+61.20 грн
1000+56.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ESD8006MUTAG esd8006-d.pdf
ESD8006MUTAG
Виробник: onsemi
Description: TVS DIODE 3.3VWM 8.4VC 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 8-UDFN (3.3x1.0)
Unidirectional Channels: 6
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.4V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 30002 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.28 грн
10+33.29 грн
100+31.29 грн
500+27.44 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
ESD8008MUTAG esd8008-d.pdf
ESD8008MUTAG
Виробник: onsemi
Description: TVS DIODE 3.3VWM 8.1VC 14UDFN
Packaging: Cut Tape (CT)
Package / Case: 14-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 14-UDFN (5.5x1.5)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.1V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 18344 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+32.36 грн
13+25.26 грн
100+21.17 грн
500+19.81 грн
1000+19.74 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
ESD8104MUTAG esd8104-d.pdf
ESD8104MUTAG
Виробник: onsemi
Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 120227 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+37.47 грн
14+24.93 грн
100+20.03 грн
500+15.93 грн
1000+14.49 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
MG2040MUTAG mg2040-d.pdf
MG2040MUTAG
Виробник: onsemi
Description: TVS DIODE 5VWM 10VC 18UDFN
Packaging: Cut Tape (CT)
Package / Case: 18-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 18-UDFN (5.5x1.5)
Unidirectional Channels: 14
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: No
Part Status: Active
на замовлення 9247 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+75.79 грн
10+54.45 грн
100+39.16 грн
500+29.50 грн
1000+28.75 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
NIS5132MN2TXG nis5132-d.pdf
NIS5132MN2TXG
Виробник: onsemi
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
Part Status: Not For New Designs
на замовлення 8215 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+80.05 грн
10+55.60 грн
25+50.19 грн
100+41.57 грн
250+38.94 грн
500+37.35 грн
1000+35.45 грн
2500+34.09 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
NIS5135MN2TXG nis5135-d.pdf
NIS5135MN2TXG
Виробник: onsemi
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.1V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
на замовлення 7081 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+95.38 грн
10+82.17 грн
25+77.97 грн
100+56.19 грн
250+49.66 грн
500+47.04 грн
1000+35.99 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NSBC124EF3T5G dtc124e-d.pdf
NSBC124EF3T5G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 4316 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+28.10 грн
19+18.04 грн
100+12.15 грн
500+8.83 грн
1000+7.98 грн
2000+7.25 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
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