| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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74AC10SJ | onsemi |
Description: IC GATE NAND 3CH 3-INP 14SOPPackaging: Tube Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 3 Supplier Device Package: 14-SOP Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 3 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74AC10MTCX | onsemi |
Description: IC GATE NAND 3CH 3-INP 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 3 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 3 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74AC10SC | onsemi |
Description: IC GATE NAND 3CH 3-INP 14SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 3 Supplier Device Package: 14-SOIC Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 3 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74AC10SCX | onsemi |
Description: IC GATE NAND 3CH 3-INP 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 3 Supplier Device Package: 14-SOIC Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 3 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74AC10SJX | onsemi |
Description: IC GATE NAND 3CH 3-INP 14SOPPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 3 Supplier Device Package: 14-SOP Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 3 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TN5D51A-R-HCC11-E | onsemi |
Description: IC REG BUCK 12V 5A TO220F5I5H-HB Packaging: Tube Package / Case: TO-220-5 Full Pack, Formed Leads Output Type: Fixed Mounting Type: Through Hole Number of Outputs: 1 Function: Step-Down Current - Output: 5A Operating Temperature: -10°C ~ 85°C Output Configuration: Positive Frequency - Switching: 150kHz Voltage - Input (Max): 48V Topology: Buck Supplier Device Package: TO-220F5I5H-HB Synchronous Rectifier: No Voltage - Input (Min): 20V Voltage - Output (Min/Fixed): 12V Part Status: Obsolete |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | |||||||||||||||||
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TN8D51A-HB11-E | onsemi |
Description: IC REG BUCK 12V 8A TO220F5I5H-HBFunction: Step-Down Number of Outputs: 1 Mounting Type: Through Hole Output Type: Fixed Package / Case: TO-220-5 Full Pack, Formed Leads Packaging: Bulk Voltage - Output (Min/Fixed): 12V Voltage - Input (Min): 20V Synchronous Rectifier: No Supplier Device Package: TO-220F5I5H-HB Topology: Buck Voltage - Input (Max): 48V Frequency - Switching: 150kHz Output Configuration: Positive Operating Temperature: -10°C ~ 85°C (TA) Current - Output: 8A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||||||||
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TN8D41A-HB11-E | onsemi |
Description: IC REG BUCK 5V 8A TO220FL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TY40470R2 | onsemi |
Description: IC SUPERVISOR ANA UNDERVOLT DET Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NSS20500UW3TBG | onsemi |
Description: TRANS PNP 20V 5A 3WDFNPower - Max: 875 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: 3-WDFN (2x2) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: 3-WDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NSS20500UW3TBG | onsemi |
Description: TRANS PNP 20V 5A 3WDFNPower - Max: 875 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: 3-WDFN (2x2) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: 3-WDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SK4065-DL-1EX | onsemi |
Description: 2SK4065 - MOSFET N-CHANNEL 75V TInput Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Part Status: Active Supplier Device Package: TO-263-2 Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Bulk |
на замовлення 3140 шт: термін постачання 21-31 дні (днів) |
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2SK4084LS | onsemi |
Description: 2SK4084LS - MOSFET, T14A, 500V,Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Part Status: Active Supplier Device Package: TO-220FI(LS) Power Dissipation (Max): 2W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
на замовлення 941 шт: термін постачання 21-31 дні (днів) |
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| 2SK443-6-TB-E-ON | onsemi |
Description: PNP/NPN EPITAXIAL PLANAR SILICON Packaging: Bulk |
на замовлення 18333 шт: термін постачання 21-31 дні (днів) |
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| 2SK4067-N-TL-E | onsemi |
Description: NCH 4V DRIVE SERIESPart Status: Active Packaging: Bulk |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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| 2SK436-19-TB-E | onsemi |
Description: NCH T-FET Part Status: Active Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SI9936DY | onsemi |
Description: MOSFET 2N-CH 30V 5A 8SOICSupplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5A Drain to Source Voltage (Vdss): 30V Power - Max: 900mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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NTH4L067N65S3H | onsemi |
Description: SUPERFET3 FAST 67MOHM TO-247-4Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 4V @ 3.9mA Power Dissipation (Max): 266W (Tc) |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||||
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SZNSQA6V8AW5T2G | onsemi |
Description: TVS DIODE 5VWM 13VC SC88APackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Capacitance @ Frequency: 12pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.6A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SC-88A (SC-70-5/SOT-353) Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 13V Power - Peak Pulse: 20W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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SZNSQA6V8AW5T2G | onsemi |
Description: TVS DIODE 5VWM 13VC SC88APackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Capacitance @ Frequency: 12pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.6A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SC-88A (SC-70-5/SOT-353) Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 13V Power - Peak Pulse: 20W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1012 шт: термін постачання 21-31 дні (днів) |
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| NTMFD0D9N02P1E | onsemi |
Description: IFET 25V 0.9 MOHM PQFN56MP Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta) Drain to Source Voltage (Vdss): 30V, 25V Power - Max: 960mW (Ta), 1.04W (Ta) Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDMS86263P-23507X | onsemi |
Description: FET -150V 53.0 MOHM PQFN56 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc) FET Type: P-Channel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2SA1770S-AN | onsemi |
Description: TRANS PNP 160V 1.5A 3NMPPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 160 V Current - Collector (Ic) (Max): 1.5 A Supplier Device Package: 3-NMP Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: SC-71 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CNY173SVM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SMDPackaging: Bulk Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 6-SMD Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 1725 шт: термін постачання 21-31 дні (днів) |
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CNY173SVM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SMDPackaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 6-SMD Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 324 шт: термін постачання 21-31 дні (днів) |
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CAV25512YE-GT3 | onsemi |
Description: IC EEPROM 512KBIT SPI 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 64K x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CAV25512YE-GT3 | onsemi |
Description: IC EEPROM 512KBIT SPI 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Grade: Automotive Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 64K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 6161 шт: термін постачання 21-31 дні (днів) |
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NDUL03N150CG | onsemi |
Description: MOSFET N-CH 1500V 2.5A TO3PInput Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 1500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3P(L) Power Dissipation (Max): 3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SB01-05C-TB-E | onsemi |
Description: DIODE SCHOTTKY 50V 100MA 3CPCurrent - Reverse Leakage @ Vr: 15 µA @ 25 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: 3-CP Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 10 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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SB01-05C-TB-E | onsemi |
Description: DIODE SCHOTTKY 50V 100MA 3CPCurrent - Reverse Leakage @ Vr: 15 µA @ 25 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: 3-CP Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 10 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 1911 шт: термін постачання 21-31 дні (днів) |
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NSVDTC123JET1G | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC75Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NSVDTC123JET1G | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC75Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5948 шт: термін постачання 21-31 дні (днів) |
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FW261-TL-E | onsemi | Description: NCH+NCH 4V DRIVE SERIES |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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MCH6661-TL-W | onsemi |
Description: MOSFET 2N-CH 30V 1.8A SOT363 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC100LVEP210FAG | onsemi |
Description: IC CLK BUFFER 1:5 3GHZ 32LQFPFrequency - Max: 3 GHz Part Status: Active Supplier Device Package: 32-LQFP (7x7) Differential - Input:Output: Yes/Yes Ratio - Input:Output: 1:5 Voltage - Supply: 2.375V ~ 3.8V Operating Temperature: -40°C ~ 85°C Input: ECL, HSTL, LVDS, PECL Type: Fanout Buffer (Distribution) Output: ECL, PECL Mounting Type: Surface Mount Number of Circuits: 2 Package / Case: 32-LQFP Packaging: Bulk |
на замовлення 14492 шт: термін постачання 21-31 дні (днів) |
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FQU1N80TU | onsemi |
Description: MOSFET N-CH 800V 1A IPAKInput Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBT5401-D87Z | onsemi |
Description: TRANS PNP 150V 0.6A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 350 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV97311MW50AR2G | onsemi |
Description: IC REG QUAD BUCK/LNR SYNC 32QFNWNumber of Outputs: 4 Part Status: Active w/Sequencer: No w/Supervisor: No w/LED Driver: No Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A Voltage/Current - Output 1: 5V, 3A Supplier Device Package: 32-QFNW (5x5) Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2) Frequency - Switching: 2MHz ~ 2.6MHz Voltage - Supply: 4.1V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount, Wettable Flank Package / Case: 32-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NCV97311MW50AR2G | onsemi |
Description: IC REG QUAD BUCK/LNR SYNC 32QFNWOperating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount, Wettable Flank Package / Case: 32-VFQFN Exposed Pad Packaging: Cut Tape (CT) Number of Outputs: 4 Part Status: Active w/Sequencer: No w/Supervisor: No w/LED Driver: No Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A Voltage/Current - Output 1: 5V, 3A Supplier Device Package: 32-QFNW (5x5) Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2) Frequency - Switching: 2MHz ~ 2.6MHz Voltage - Supply: 4.1V ~ 18V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SURS8205T3G-VF01 | onsemi |
Description: DIODE GEN PURP 50V 2A SMB |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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NVD5863NLT4G | onsemi |
Description: MOSFET N-CH 60V 14.9A DPAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.1W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVD5863NLT4G | onsemi |
Description: MOSFET N-CH 60V 14.9A DPAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.1W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVD5806NT4G | onsemi |
Description: MOSFET N-CH 40V 33A DPAKVgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVD5807NT4G | onsemi |
Description: MOSFET N-CH 40V 23A DPAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVD5807NT4G | onsemi |
Description: MOSFET N-CH 40V 23A DPAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SVD5865NLT4G | onsemi |
Description: MOSFET N-CH 60V 10A/46A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Qualification: AEC-Q101 Grade: Automotive Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: DPAK-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.1W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVD5802NT4G-TB01 | onsemi |
Description: MOSFET N-CH 40V 16.4A/101A DPAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SVD5806NT4G | onsemi |
Description: MOSFET N-CH 40V 33A DPAK Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Qualification: AEC-Q101 Grade: Automotive Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVD5863NLT4G-VF01 | onsemi |
Description: MOSFET N-CH 60V 14.9A/82A DPAK Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.1W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVD5802NT4G-VF01 | onsemi |
Description: MOSFET N-CH 40V 16.4A/101A DPAKQualification: AEC-Q101 Grade: Automotive Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| LC70301W-UIH-H | onsemi |
Description: LC70301W -LOW POWER CONSUMPTIONPackaging: Bulk |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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LC88F52H0AU-CH-H | onsemi |
Description: MICROCONTROLLER, 16-BIT, FLASH, |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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LC709209FXE-01TBG | onsemi |
Description: BATTERY FUEL GAUGE FOR 1-CELL LIPart Status: Active Supplier Device Package: 12-WLCSP (1.48x1.91) Battery Chemistry: Lithium Ion/Polymer Operating Temperature: -40°C ~ 85°C (TA) Interface: I2C Function: Fuel Gauge Mounting Type: Surface Mount Number of Cells: 1 Package / Case: 12-UFBGA, WLCSP Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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LC709209FXE-01TBG | onsemi |
Description: BATTERY FUEL GAUGE FOR 1-CELL LIBattery Chemistry: Lithium Ion/Polymer Operating Temperature: -40°C ~ 85°C (TA) Interface: I2C Function: Fuel Gauge Mounting Type: Surface Mount Number of Cells: 1 Package / Case: 12-UFBGA, WLCSP Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 12-WLCSP (1.48x1.91) |
на замовлення 863 шт: термін постачання 21-31 дні (днів) |
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NCD57252DWR2G | onsemi |
Description: DGTL ISO 5KV 2CH GATE DVR 16SOICVoltage - Output Supply: 32V Number of Channels: 2 Part Status: Active Pulse Width Distortion (Max): 10ns Propagation Delay tpLH / tpHL (Max): 80ns, 80ns Common Mode Transient Immunity (Min): 100kV/µs Rise / Fall Time (Typ): 12ns, 10ns Supplier Device Package: 16-SOIC Approval Agency: VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 6.5A, 6.5A Technology: Capacitive Coupling Current - Peak Output: 6.5A Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NCD57252DWR2G | onsemi |
Description: DGTL ISO 5KV 2CH GATE DVR 16SOICMounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) Voltage - Output Supply: 32V Number of Channels: 2 Part Status: Active Pulse Width Distortion (Max): 10ns Propagation Delay tpLH / tpHL (Max): 80ns, 80ns Common Mode Transient Immunity (Min): 100kV/µs Rise / Fall Time (Typ): 12ns, 10ns Supplier Device Package: 16-SOIC Approval Agency: VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 6.5A, 6.5A Technology: Capacitive Coupling Current - Peak Output: 6.5A Operating Temperature: -40°C ~ 125°C Grade: Automotive Qualification: AEC-Q100 |
на замовлення 13547 шт: термін постачання 21-31 дні (днів) |
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NVTYS005N06CLTWG | onsemi |
Description: T6 60V N-CH LL IN LFPAK33Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2.2V @ 75µA Power Dissipation (Max): 3.2W (Ta), 76W (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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NCP45790IMN24RTWG | onsemi |
Description: SOLITUDE 790 MCMPart Status: Active Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO Supplier Device Package: 14-DFN (4x4) Ratio - Input:Output: 1:1 Current - Output (Max): 8A Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Voltage - Load: 3V ~ 24V Input Type: Non-Inverting Rds On (Typ): 5.6mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 14-VFDFN Exposed Pad Features: Slew Rate Controlled Packaging: Cut Tape (CT) |
на замовлення 19289 шт: термін постачання 21-31 дні (днів) |
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NCP435FCT2G | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSPPart Status: Last Time Buy Supplier Device Package: 4-WLCSP (0.96x0.96) Ratio - Input:Output: 1:1 Current - Output (Max): 2A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1V ~ 3.6V Input Type: Non-Inverting Rds On (Typ): 65mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: P-Channel Package / Case: 4-UFBGA, WLCSP Features: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NCP45750IMN24TWG | onsemi | Description: 750 MCM |
на замовлення 2890 шт: термін постачання 21-31 дні (днів) |
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| 74AC10SJ |
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Виробник: onsemi
Description: IC GATE NAND 3CH 3-INP 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 3CH 3-INP 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
товару немає в наявності
В кошику
од. на суму грн.
| 74AC10MTCX |
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Виробник: onsemi
Description: IC GATE NAND 3CH 3-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 3CH 3-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
товару немає в наявності
В кошику
од. на суму грн.
| 74AC10SC |
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Виробник: onsemi
Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
товару немає в наявності
В кошику
од. на суму грн.
| 74AC10SCX |
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Виробник: onsemi
Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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| 74AC10SJX |
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Виробник: onsemi
Description: IC GATE NAND 3CH 3-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 3CH 3-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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| TN5D51A-R-HCC11-E |
Виробник: onsemi
Description: IC REG BUCK 12V 5A TO220F5I5H-HB
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -10°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 150kHz
Voltage - Input (Max): 48V
Topology: Buck
Supplier Device Package: TO-220F5I5H-HB
Synchronous Rectifier: No
Voltage - Input (Min): 20V
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
Description: IC REG BUCK 12V 5A TO220F5I5H-HB
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -10°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 150kHz
Voltage - Input (Max): 48V
Topology: Buck
Supplier Device Package: TO-220F5I5H-HB
Synchronous Rectifier: No
Voltage - Input (Min): 20V
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
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Мінімальне замовлення: 50 шт
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| TN8D51A-HB11-E |
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Виробник: onsemi
Description: IC REG BUCK 12V 8A TO220F5I5H-HB
Function: Step-Down
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-5 Full Pack, Formed Leads
Packaging: Bulk
Voltage - Output (Min/Fixed): 12V
Voltage - Input (Min): 20V
Synchronous Rectifier: No
Supplier Device Package: TO-220F5I5H-HB
Topology: Buck
Voltage - Input (Max): 48V
Frequency - Switching: 150kHz
Output Configuration: Positive
Operating Temperature: -10°C ~ 85°C (TA)
Current - Output: 8A
Description: IC REG BUCK 12V 8A TO220F5I5H-HB
Function: Step-Down
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-5 Full Pack, Formed Leads
Packaging: Bulk
Voltage - Output (Min/Fixed): 12V
Voltage - Input (Min): 20V
Synchronous Rectifier: No
Supplier Device Package: TO-220F5I5H-HB
Topology: Buck
Voltage - Input (Max): 48V
Frequency - Switching: 150kHz
Output Configuration: Positive
Operating Temperature: -10°C ~ 85°C (TA)
Current - Output: 8A
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Мінімальне замовлення: 100 шт
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| TN8D41A-HB11-E |
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Виробник: onsemi
Description: IC REG BUCK 5V 8A TO220FL
Description: IC REG BUCK 5V 8A TO220FL
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| NSS20500UW3TBG |
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Виробник: onsemi
Description: TRANS PNP 20V 5A 3WDFN
Power - Max: 875 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: 3-WDFN (2x2)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: TRANS PNP 20V 5A 3WDFN
Power - Max: 875 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: 3-WDFN (2x2)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 13.88 грн |
| NSS20500UW3TBG |
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Виробник: onsemi
Description: TRANS PNP 20V 5A 3WDFN
Power - Max: 875 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: 3-WDFN (2x2)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: TRANS PNP 20V 5A 3WDFN
Power - Max: 875 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: 3-WDFN (2x2)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-WDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 57.88 грн |
| 10+ | 34.74 грн |
| 100+ | 22.51 грн |
| 500+ | 16.17 грн |
| 1000+ | 14.57 грн |
| 2SK4065-DL-1EX |
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Виробник: onsemi
Description: 2SK4065 - MOSFET N-CHANNEL 75V T
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Part Status: Active
Supplier Device Package: TO-263-2
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Description: 2SK4065 - MOSFET N-CHANNEL 75V T
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Part Status: Active
Supplier Device Package: TO-263-2
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
на замовлення 3140 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 124+ | 176.54 грн |
| 2SK4084LS |
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Виробник: onsemi
Description: 2SK4084LS - MOSFET, T14A, 500V,
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Part Status: Active
Supplier Device Package: TO-220FI(LS)
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: 2SK4084LS - MOSFET, T14A, 500V,
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Part Status: Active
Supplier Device Package: TO-220FI(LS)
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
на замовлення 941 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 214+ | 106.50 грн |
| 2SK443-6-TB-E-ON |
на замовлення 18333 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3643+ | 5.58 грн |
| 2SK4067-N-TL-E |
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на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2049+ | 10.94 грн |
| SI9936DY |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 5A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 5A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| NTH4L067N65S3H |
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Виробник: onsemi
Description: SUPERFET3 FAST 67MOHM TO-247-4
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Power Dissipation (Max): 266W (Tc)
Description: SUPERFET3 FAST 67MOHM TO-247-4
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Power Dissipation (Max): 266W (Tc)
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Мінімальне замовлення: 450 шт
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| SZNSQA6V8AW5T2G |
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Виробник: onsemi
Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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Мінімальне замовлення: 3000 шт
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| SZNSQA6V8AW5T2G |
![]() |
Виробник: onsemi
Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1012 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 44.40 грн |
| 12+ | 26.27 грн |
| 100+ | 16.81 грн |
| 500+ | 11.93 грн |
| 1000+ | 10.68 грн |
| NTMFD0D9N02P1E |
Виробник: onsemi
Description: IFET 25V 0.9 MOHM PQFN56MP
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta)
Drain to Source Voltage (Vdss): 30V, 25V
Power - Max: 960mW (Ta), 1.04W (Ta)
Technology: MOSFET (Metal Oxide)
Description: IFET 25V 0.9 MOHM PQFN56MP
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta)
Drain to Source Voltage (Vdss): 30V, 25V
Power - Max: 960mW (Ta), 1.04W (Ta)
Technology: MOSFET (Metal Oxide)
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| FDMS86263P-23507X |
Виробник: onsemi
Description: FET -150V 53.0 MOHM PQFN56
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
FET Type: P-Channel
Description: FET -150V 53.0 MOHM PQFN56
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
FET Type: P-Channel
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| 2SA1770S-AN |
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Виробник: onsemi
Description: TRANS PNP 160V 1.5A 3NMP
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: 3-NMP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Tape & Reel (TR)
Description: TRANS PNP 160V 1.5A 3NMP
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: 3-NMP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Tape & Reel (TR)
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| CNY173SVM |
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Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 1725 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 46.78 грн |
| 10+ | 30.92 грн |
| 100+ | 22.52 грн |
| 500+ | 17.57 грн |
| 1000+ | 16.41 грн |
| CNY173SVM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 324 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 46.78 грн |
| 50+ | 24.63 грн |
| 100+ | 22.52 грн |
| CAV25512YE-GT3 |
![]() |
Виробник: onsemi
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 54.16 грн |
| CAV25512YE-GT3 |
![]() |
Виробник: onsemi
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 6161 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 87.51 грн |
| 10+ | 78.99 грн |
| 25+ | 76.80 грн |
| 50+ | 70.50 грн |
| 100+ | 68.92 грн |
| 250+ | 66.82 грн |
| 500+ | 64.17 грн |
| 1000+ | 62.61 грн |
| NDUL03N150CG |
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Виробник: onsemi
Description: MOSFET N-CH 1500V 2.5A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P(L)
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Packaging: Tube
Description: MOSFET N-CH 1500V 2.5A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P(L)
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Packaging: Tube
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| SB01-05C-TB-E |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 50V 100MA 3CP
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 3-CP
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 50V 100MA 3CP
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 3-CP
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SB01-05C-TB-E |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 50V 100MA 3CP
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 3-CP
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 50V 100MA 3CP
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 3-CP
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 1911 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 39.65 грн |
| 14+ | 23.06 грн |
| 100+ | 14.65 грн |
| 500+ | 10.33 грн |
| 1000+ | 9.22 грн |
| NSVDTC123JET1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.52 грн |
| NSVDTC123JET1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5948 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 25+ | 12.69 грн |
| 42+ | 7.41 грн |
| 100+ | 4.60 грн |
| 500+ | 3.14 грн |
| 1000+ | 2.76 грн |
| FW261-TL-E |
Виробник: onsemi
Description: NCH+NCH 4V DRIVE SERIES
Description: NCH+NCH 4V DRIVE SERIES
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2885+ | 7.65 грн |
| MCH6661-TL-W |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 1.8A SOT363
Description: MOSFET 2N-CH 30V 1.8A SOT363
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В кошику
од. на суму грн.
| MC100LVEP210FAG |
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Виробник: onsemi
Description: IC CLK BUFFER 1:5 3GHZ 32LQFP
Frequency - Max: 3 GHz
Part Status: Active
Supplier Device Package: 32-LQFP (7x7)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:5
Voltage - Supply: 2.375V ~ 3.8V
Operating Temperature: -40°C ~ 85°C
Input: ECL, HSTL, LVDS, PECL
Type: Fanout Buffer (Distribution)
Output: ECL, PECL
Mounting Type: Surface Mount
Number of Circuits: 2
Package / Case: 32-LQFP
Packaging: Bulk
Description: IC CLK BUFFER 1:5 3GHZ 32LQFP
Frequency - Max: 3 GHz
Part Status: Active
Supplier Device Package: 32-LQFP (7x7)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:5
Voltage - Supply: 2.375V ~ 3.8V
Operating Temperature: -40°C ~ 85°C
Input: ECL, HSTL, LVDS, PECL
Type: Fanout Buffer (Distribution)
Output: ECL, PECL
Mounting Type: Surface Mount
Number of Circuits: 2
Package / Case: 32-LQFP
Packaging: Bulk
на замовлення 14492 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 22+ | 1097.41 грн |
| FQU1N80TU |
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Виробник: onsemi
Description: MOSFET N-CH 800V 1A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 800V 1A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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од. на суму грн.
| MMBT5401-D87Z |
![]() |
Виробник: onsemi
Description: TRANS PNP 150V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
Description: TRANS PNP 150V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
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В кошику
од. на суму грн.
| NCV97311MW50AR2G |
![]() |
Виробник: onsemi
Description: IC REG QUAD BUCK/LNR SYNC 32QFNW
Number of Outputs: 4
Part Status: Active
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 1: 5V, 3A
Supplier Device Package: 32-QFNW (5x5)
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Frequency - Switching: 2MHz ~ 2.6MHz
Voltage - Supply: 4.1V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG QUAD BUCK/LNR SYNC 32QFNW
Number of Outputs: 4
Part Status: Active
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 1: 5V, 3A
Supplier Device Package: 32-QFNW (5x5)
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Frequency - Switching: 2MHz ~ 2.6MHz
Voltage - Supply: 4.1V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 215.72 грн |
| NCV97311MW50AR2G |
![]() |
Виробник: onsemi
Description: IC REG QUAD BUCK/LNR SYNC 32QFNW
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Outputs: 4
Part Status: Active
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 1: 5V, 3A
Supplier Device Package: 32-QFNW (5x5)
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Frequency - Switching: 2MHz ~ 2.6MHz
Voltage - Supply: 4.1V ~ 18V
Description: IC REG QUAD BUCK/LNR SYNC 32QFNW
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Outputs: 4
Part Status: Active
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 1: 5V, 3A
Supplier Device Package: 32-QFNW (5x5)
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Frequency - Switching: 2MHz ~ 2.6MHz
Voltage - Supply: 4.1V ~ 18V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 446.42 грн |
| 10+ | 386.21 грн |
| 25+ | 365.13 грн |
| 100+ | 296.98 грн |
| 250+ | 281.76 грн |
| 500+ | 252.82 грн |
| 1000+ | 209.73 грн |
| 2500+ | 199.24 грн |
| SURS8205T3G-VF01 |
![]() |
Виробник: onsemi
Description: DIODE GEN PURP 50V 2A SMB
Description: DIODE GEN PURP 50V 2A SMB
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NVD5863NLT4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 14.9A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 14.9A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| NVD5863NLT4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 14.9A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 14.9A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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В кошику
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| NVD5806NT4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 33A DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Description: MOSFET N-CH 40V 33A DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
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В кошику
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| NVD5807NT4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 23A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 23A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| NVD5807NT4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 23A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 23A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SVD5865NLT4G |
Виробник: onsemi
Description: MOSFET N-CH 60V 10A/46A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 10A/46A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| NVD5802NT4G-TB01 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 16.4A/101A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 16.4A/101A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| SVD5806NT4G |
Виробник: onsemi
Description: MOSFET N-CH 40V 33A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 33A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| NVD5863NLT4G-VF01 |
Виробник: onsemi
Description: MOSFET N-CH 60V 14.9A/82A DPAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 60V 14.9A/82A DPAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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од. на суму грн.
| NVD5802NT4G-VF01 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 16.4A/101A DPAK
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V
Description: MOSFET N-CH 40V 16.4A/101A DPAK
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V
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| LC70301W-UIH-H |
![]() |
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 267+ | 81.97 грн |
| LC88F52H0AU-CH-H |
![]() |
Виробник: onsemi
Description: MICROCONTROLLER, 16-BIT, FLASH,
Description: MICROCONTROLLER, 16-BIT, FLASH,
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 42+ | 556.77 грн |
| LC709209FXE-01TBG |
![]() |
Виробник: onsemi
Description: BATTERY FUEL GAUGE FOR 1-CELL LI
Part Status: Active
Supplier Device Package: 12-WLCSP (1.48x1.91)
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C
Function: Fuel Gauge
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 12-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: BATTERY FUEL GAUGE FOR 1-CELL LI
Part Status: Active
Supplier Device Package: 12-WLCSP (1.48x1.91)
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C
Function: Fuel Gauge
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 12-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| LC709209FXE-01TBG |
![]() |
Виробник: onsemi
Description: BATTERY FUEL GAUGE FOR 1-CELL LI
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C
Function: Fuel Gauge
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 12-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 12-WLCSP (1.48x1.91)
Description: BATTERY FUEL GAUGE FOR 1-CELL LI
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C
Function: Fuel Gauge
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 12-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 12-WLCSP (1.48x1.91)
на замовлення 863 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 268.80 грн |
| 10+ | 165.54 грн |
| 25+ | 141.23 грн |
| 100+ | 106.66 грн |
| 250+ | 93.96 грн |
| 500+ | 86.14 грн |
| NCD57252DWR2G |
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Виробник: onsemi
Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC
Voltage - Output Supply: 32V
Number of Channels: 2
Part Status: Active
Pulse Width Distortion (Max): 10ns
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Common Mode Transient Immunity (Min): 100kV/µs
Rise / Fall Time (Typ): 12ns, 10ns
Supplier Device Package: 16-SOIC
Approval Agency: VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 6.5A, 6.5A
Technology: Capacitive Coupling
Current - Peak Output: 6.5A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC
Voltage - Output Supply: 32V
Number of Channels: 2
Part Status: Active
Pulse Width Distortion (Max): 10ns
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Common Mode Transient Immunity (Min): 100kV/µs
Rise / Fall Time (Typ): 12ns, 10ns
Supplier Device Package: 16-SOIC
Approval Agency: VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 6.5A, 6.5A
Technology: Capacitive Coupling
Current - Peak Output: 6.5A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1000+ | 114.94 грн |
| 2000+ | 106.52 грн |
| 5000+ | 103.19 грн |
| NCD57252DWR2G |
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Виробник: onsemi
Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Voltage - Output Supply: 32V
Number of Channels: 2
Part Status: Active
Pulse Width Distortion (Max): 10ns
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Common Mode Transient Immunity (Min): 100kV/µs
Rise / Fall Time (Typ): 12ns, 10ns
Supplier Device Package: 16-SOIC
Approval Agency: VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 6.5A, 6.5A
Technology: Capacitive Coupling
Current - Peak Output: 6.5A
Operating Temperature: -40°C ~ 125°C
Grade: Automotive
Qualification: AEC-Q100
Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Voltage - Output Supply: 32V
Number of Channels: 2
Part Status: Active
Pulse Width Distortion (Max): 10ns
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Common Mode Transient Immunity (Min): 100kV/µs
Rise / Fall Time (Typ): 12ns, 10ns
Supplier Device Package: 16-SOIC
Approval Agency: VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 6.5A, 6.5A
Technology: Capacitive Coupling
Current - Peak Output: 6.5A
Operating Temperature: -40°C ~ 125°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 13547 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 229.16 грн |
| 10+ | 198.07 грн |
| 25+ | 187.23 грн |
| 100+ | 144.48 грн |
| 250+ | 129.64 грн |
| 500+ | 124.95 грн |
| NVTYS005N06CLTWG |
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Виробник: onsemi
Description: T6 60V N-CH LL IN LFPAK33
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 75µA
Power Dissipation (Max): 3.2W (Ta), 76W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Description: T6 60V N-CH LL IN LFPAK33
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 75µA
Power Dissipation (Max): 3.2W (Ta), 76W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCP45790IMN24RTWG |
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Виробник: onsemi
Description: SOLITUDE 790 MCM
Part Status: Active
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO
Supplier Device Package: 14-DFN (4x4)
Ratio - Input:Output: 1:1
Current - Output (Max): 8A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 24V
Input Type: Non-Inverting
Rds On (Typ): 5.6mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-VFDFN Exposed Pad
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Description: SOLITUDE 790 MCM
Part Status: Active
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO
Supplier Device Package: 14-DFN (4x4)
Ratio - Input:Output: 1:1
Current - Output (Max): 8A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 24V
Input Type: Non-Inverting
Rds On (Typ): 5.6mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-VFDFN Exposed Pad
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
на замовлення 19289 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 375.85 грн |
| 10+ | 235.41 грн |
| 25+ | 202.50 грн |
| 100+ | 155.15 грн |
| 250+ | 138.00 грн |
| 500+ | 127.46 грн |
| 1000+ | 118.35 грн |
| NCP435FCT2G |
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Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Part Status: Last Time Buy
Supplier Device Package: 4-WLCSP (0.96x0.96)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1V ~ 3.6V
Input Type: Non-Inverting
Rds On (Typ): 65mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 4-UFBGA, WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Part Status: Last Time Buy
Supplier Device Package: 4-WLCSP (0.96x0.96)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1V ~ 3.6V
Input Type: Non-Inverting
Rds On (Typ): 65mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 4-UFBGA, WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| NCP45750IMN24TWG |
Виробник: onsemi
Description: 750 MCM
Description: 750 MCM
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 239.46 грн |
| 10+ | 207.61 грн |
| 25+ | 196.30 грн |
| 100+ | 159.67 грн |
| 250+ | 151.48 грн |
| 500+ | 135.92 грн |
| 1000+ | 112.75 грн |

































