| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NTMFS5C612NLT1G | onsemi |
Description: MOSFET N-CH 60V 36A/235A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C612NLT1G | onsemi |
Description: MOSFET N-CH 60V 36A/235A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V |
на замовлення 13244 шт: термін постачання 21-31 дні (днів) |
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NTMFS7D8N10GTWG | onsemi |
Description: N-CHANNEL SHIELDED GATE POWERTREPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 48A, 10V Power Dissipation (Max): 3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 254µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS7D8N10GTWG | onsemi |
Description: N-CHANNEL SHIELDED GATE POWERTREPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 48A, 10V Power Dissipation (Max): 3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 254µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V |
на замовлення 2856 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C410NT3G | onsemi |
Description: MOSFET N-CH 40V 46A/300A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS5C410NT3G | onsemi |
Description: MOSFET N-CH 40V 46A/300A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V |
на замовлення 3976 шт: термін постачання 21-31 дні (днів) |
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NTMFS08N003C | onsemi |
Description: MOSFET N-CH 80V 22A/147A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 147A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 56A, 10V Power Dissipation (Max): 2.7W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 310µA Supplier Device Package: Power56 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 40 V |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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NCP1338DR2G | onsemi |
Description: PWM CONTROLLER, FREE RUNNING QUA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCP1339HDR2G | onsemi |
Description: HIGH FREQUENCY QUASI-RESONANT COPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCP133BMXADJTCG | onsemi |
Description: IC REG LIN POS ADJ 500MA 6XDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCP133BMXADJTCG | onsemi |
Description: IC REG LIN POS ADJ 500MA 6XDFN |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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NCP1339DDR2G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width), 13 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 28V Supplier Device Package: 14-SOIC Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 15 V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LMV981MU3TBG | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 8ULLGAPackaging: Bulk Package / Case: 8-XFLGA Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 95µA Slew Rate: 0.48V/µs Gain Bandwidth Product: 1.5 MHz Current - Input Bias: 1 nA Voltage - Input Offset: 1 mV Supplier Device Package: 8-ULLGA (1.5x1.5) Part Status: Obsolete Number of Circuits: 1 Current - Output / Channel: 80 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5 V |
на замовлення 1940 шт: термін постачання 21-31 дні (днів) |
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FDB110N15A | onsemi |
Description: MOSFET N-CH 150V 92A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 92A, 10V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 75 V |
на замовлення 3238 шт: термін постачання 21-31 дні (днів) |
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NSV40300MZ4T1G | onsemi |
Description: TRANS PNP 40V 3A SOT223 |
на замовлення 13000 шт: термін постачання 21-31 дні (днів) |
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NSV40300MZ4T1G | onsemi |
Description: TRANS PNP 40V 3A SOT223 |
на замовлення 13000 шт: термін постачання 21-31 дні (днів) |
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2SB1468R | onsemi |
Description: PNP SILICON TRANSISTORPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 250mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-220ML Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 2 W |
на замовлення 948 шт: термін постачання 21-31 дні (днів) |
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| LC824100-09F-TBM-GBE | onsemi | Description: LC824100-09F-TBM-GBE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NCP1280DR2G | onsemi |
Description: IC OFFLINE SW MULT TOP 16SOICPackaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 62%, 80% Frequency - Switching: 150kHz ~ 300kHz Internal Switch(s): No Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Forward, Secondary Side SR Voltage - Supply (Vcc/Vdd): 7V ~ 25V Supplier Device Package: 16-SOIC Fault Protection: Current Limiting, Over Voltage Voltage - Start Up: 11 V Control Features: Frequency Control, Soft Start |
на замовлення 58243 шт: термін постачання 21-31 дні (днів) |
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SMSZ1600-25T3DS | onsemi | Description: DIODE ZENER 0.5W SPCL SOD123 |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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NCP154MX330300TAG | onsemi |
Description: IC REG LINEAR 3V/3.3V 8XDFN |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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NCP154MX180300TAG | onsemi |
Description: IC REG LINEAR 1.8V/3V 8XDFNPackaging: Bulk Package / Case: 8-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA, 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 5.25V Number of Regulators: 2 Supplier Device Package: 8-XDFN (1.6x1.2) Voltage - Output (Min/Fixed): 1.8V, 3V Control Features: Enable Part Status: Obsolete PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.39V @ 300mA, 0.26V @ 300mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 200 µA |
на замовлення 32940 шт: термін постачання 21-31 дні (днів) |
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| NSV40300CTWG | onsemi |
Description: PNP LFPAK4 BIP POWER TRAN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74AC10PC | onsemi |
Description: IC GATE NAND 3CH 3-INP 14MDIPPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 3 Supplier Device Package: 14-MDIP Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 3 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74AC10SJ | onsemi |
Description: IC GATE NAND 3CH 3-INP 14SOPPackaging: Tube Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 3 Supplier Device Package: 14-SOP Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 3 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74AC10MTCX | onsemi |
Description: IC GATE NAND 3CH 3-INP 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 3 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 3 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74AC10SC | onsemi |
Description: IC GATE NAND 3CH 3-INP 14SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 3 Supplier Device Package: 14-SOIC Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 3 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74AC10SCX | onsemi |
Description: IC GATE NAND 3CH 3-INP 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 3 Supplier Device Package: 14-SOIC Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 3 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74AC10SJX | onsemi |
Description: IC GATE NAND 3CH 3-INP 14SOPPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 3 Supplier Device Package: 14-SOP Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 3 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TN5D51A-R-HCC11-E | onsemi |
Description: IC REG BUCK 12V 5A TO220F5I5H-HB Packaging: Tube Package / Case: TO-220-5 Full Pack, Formed Leads Output Type: Fixed Mounting Type: Through Hole Number of Outputs: 1 Function: Step-Down Current - Output: 5A Operating Temperature: -10°C ~ 85°C Output Configuration: Positive Frequency - Switching: 150kHz Voltage - Input (Max): 48V Topology: Buck Supplier Device Package: TO-220F5I5H-HB Synchronous Rectifier: No Voltage - Input (Min): 20V Voltage - Output (Min/Fixed): 12V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TN8D51A-HB11-E | onsemi |
Description: IC REG BUCK 12V 8A TO220F5I5H-HBPackaging: Bulk Package / Case: TO-220-5 Full Pack, Formed Leads Output Type: Fixed Mounting Type: Through Hole Number of Outputs: 1 Function: Step-Down Current - Output: 8A Operating Temperature: -10°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 150kHz Voltage - Input (Max): 48V Topology: Buck Supplier Device Package: TO-220F5I5H-HB Synchronous Rectifier: No Voltage - Input (Min): 20V Voltage - Output (Min/Fixed): 12V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TN8D41A-HB11-E | onsemi |
Description: IC REG BUCK 5V 8A TO220FL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TY40470R2 | onsemi |
Description: IC SUPERVISOR ANA UNDERVOLT DET Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NSS20500UW3TBG | onsemi |
Description: TRANS PNP 20V 5A 3WDFNPackaging: Tape & Reel (TR) Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V Frequency - Transition: 100MHz Supplier Device Package: 3-WDFN (2x2) Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 875 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSS20500UW3TBG | onsemi |
Description: TRANS PNP 20V 5A 3WDFNPackaging: Cut Tape (CT) Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V Frequency - Transition: 100MHz Supplier Device Package: 3-WDFN (2x2) Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 875 mW |
на замовлення 1391 шт: термін постачання 21-31 дні (днів) |
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2SK4065-DL-1EX | onsemi |
Description: 2SK4065 - MOSFET N-CHANNEL 75V TPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Supplier Device Package: TO-263-2 Part Status: Active Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V |
на замовлення 3140 шт: термін постачання 21-31 дні (днів) |
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2SK4084LS | onsemi |
Description: 2SK4084LS - MOSFET, T14A, 500V,Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta), 37W (Tc) Supplier Device Package: TO-220FI(LS) Part Status: Active Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V |
на замовлення 941 шт: термін постачання 21-31 дні (днів) |
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| 2SK443-6-TB-E-ON | onsemi |
Description: PNP/NPN EPITAXIAL PLANAR SILICON Packaging: Bulk |
на замовлення 18333 шт: термін постачання 21-31 дні (днів) |
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| 2SK4067-N-TL-E | onsemi |
Description: NCH 4V DRIVE SERIESPackaging: Bulk Part Status: Active |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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| 2SK436-19-TB-E | onsemi |
Description: NCH T-FET Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SI9936DY | onsemi |
Description: MOSFET 2N-CH 30V 5A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTH4L067N65S3H | onsemi |
Description: SUPERFET3 FAST 67MOHM TO-247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V Power Dissipation (Max): 266W (Tc) Vgs(th) (Max) @ Id: 4V @ 3.9mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SZNSQA6V8AW5T2G | onsemi |
Description: TVS DIODE 5VWM 13VC SC88APackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Capacitance @ Frequency: 12pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.6A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SC-88A (SC-70-5/SOT-353) Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 13V Power - Peak Pulse: 20W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 75000 шт: термін постачання 21-31 дні (днів) |
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SZNSQA6V8AW5T2G | onsemi |
Description: TVS DIODE 5VWM 13VC SC88APackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Capacitance @ Frequency: 12pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.6A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SC-88A (SC-70-5/SOT-353) Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 13V Power - Peak Pulse: 20W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 77774 шт: термін постачання 21-31 дні (днів) |
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| NTMFD0D9N02P1E | onsemi |
Description: IFET 25V 0.9 MOHM PQFN56MP Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 960mW (Ta), 1.04W (Ta) Drain to Source Voltage (Vdss): 30V, 25V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDMS86263P-23507X | onsemi |
Description: FET -150V 53.0 MOHM PQFN56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2SA1770S-AN | onsemi |
Description: TRANS PNP 160V 1.5A 3NMPPackaging: Tape & Reel (TR) Package / Case: SC-71 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: 3-NMP Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CNY173SVM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SMDPackaging: Bulk Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 6-SMD Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 1725 шт: термін постачання 21-31 дні (днів) |
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CNY173SVM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SMDPackaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 6-SMD Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 324 шт: термін постачання 21-31 дні (днів) |
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CAV25512YE-GT3 | onsemi |
Description: IC EEPROM 512KBIT SPI 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Grade: Automotive Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 64K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAV25512YE-GT3 | onsemi |
Description: IC EEPROM 512KBIT SPI 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Grade: Automotive Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 64K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 3252 шт: термін постачання 21-31 дні (днів) |
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NDUL03N150CG | onsemi |
Description: MOSFET N-CH 1500V 2.5A TO3PPackaging: Tube Package / Case: TO-3PL Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V Power Dissipation (Max): 3W (Ta), 50W (Tc) Supplier Device Package: TO-3P(L) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SB01-05C-TB-E | onsemi |
Description: DIODE SCHOTTKY 50V 100MA 3CPPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: 3-CP Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Current - Reverse Leakage @ Vr: 15 µA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SB01-05C-TB-E | onsemi |
Description: DIODE SCHOTTKY 50V 100MA 3CPPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: 3-CP Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Current - Reverse Leakage @ Vr: 15 µA @ 25 V |
на замовлення 1911 шт: термін постачання 21-31 дні (днів) |
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NSVDTC123JET1G | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC75Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 99000 шт: термін постачання 21-31 дні (днів) |
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NSVDTC123JET1G | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC75Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 101950 шт: термін постачання 21-31 дні (днів) |
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FW261-TL-E | onsemi | Description: NCH+NCH 4V DRIVE SERIES |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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MCH6661-TL-W | onsemi |
Description: MOSFET 2N-CH 30V 1.8A SOT363 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC100LVEP210FAG | onsemi |
Description: IC CLK BUFFER 1:5 3GHZ 32LQFPPackaging: Bulk Package / Case: 32-LQFP Number of Circuits: 2 Mounting Type: Surface Mount Output: ECL, PECL Type: Fanout Buffer (Distribution) Input: ECL, HSTL, LVDS, PECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.8V Ratio - Input:Output: 1:5 Differential - Input:Output: Yes/Yes Supplier Device Package: 32-LQFP (7x7) Part Status: Active Frequency - Max: 3 GHz |
на замовлення 14492 шт: термін постачання 21-31 дні (днів) |
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FQU1N80TU | onsemi |
Description: MOSFET N-CH 800V 1A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| NTMFS5C612NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 79.16 грн |
| 3000+ | 48.25 грн |
| NTMFS5C612NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
на замовлення 13244 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 147.87 грн |
| 10+ | 98.80 грн |
| 100+ | 80.82 грн |
| NTMFS7D8N10GTWG |
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Виробник: onsemi
Description: N-CHANNEL SHIELDED GATE POWERTRE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 48A, 10V
Power Dissipation (Max): 3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 254µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V
Description: N-CHANNEL SHIELDED GATE POWERTRE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 48A, 10V
Power Dissipation (Max): 3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 254µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| NTMFS7D8N10GTWG |
![]() |
Виробник: onsemi
Description: N-CHANNEL SHIELDED GATE POWERTRE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 48A, 10V
Power Dissipation (Max): 3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 254µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V
Description: N-CHANNEL SHIELDED GATE POWERTRE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 48A, 10V
Power Dissipation (Max): 3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 254µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V
на замовлення 2856 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 306.48 грн |
| 10+ | 201.18 грн |
| 100+ | 144.82 грн |
| 500+ | 129.57 грн |
| NTMFS5C410NT3G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 46A/300A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Description: MOSFET N-CH 40V 46A/300A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
товару немає в наявності
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од. на суму грн.
| NTMFS5C410NT3G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 46A/300A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Description: MOSFET N-CH 40V 46A/300A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
на замовлення 3976 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 217.26 грн |
| 10+ | 143.67 грн |
| 100+ | 104.03 грн |
| 500+ | 84.19 грн |
| 1000+ | 77.99 грн |
| 2000+ | 75.16 грн |
| NTMFS08N003C |
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Виробник: onsemi
Description: MOSFET N-CH 80V 22A/147A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 147A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 56A, 10V
Power Dissipation (Max): 2.7W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 310µA
Supplier Device Package: Power56
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 40 V
Description: MOSFET N-CH 80V 22A/147A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 147A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 56A, 10V
Power Dissipation (Max): 2.7W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 310µA
Supplier Device Package: Power56
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 40 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 336.73 грн |
| NCP1338DR2G |
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Виробник: onsemi
Description: PWM CONTROLLER, FREE RUNNING QUA
Description: PWM CONTROLLER, FREE RUNNING QUA
товару немає в наявності
В кошику
од. на суму грн.
| NCP133BMXADJTCG |
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Виробник: onsemi
Description: IC REG LIN POS ADJ 500MA 6XDFN
Description: IC REG LIN POS ADJ 500MA 6XDFN
товару немає в наявності
В кошику
од. на суму грн.
| NCP133BMXADJTCG |
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Виробник: onsemi
Description: IC REG LIN POS ADJ 500MA 6XDFN
Description: IC REG LIN POS ADJ 500MA 6XDFN
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| NCP1339DDR2G |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width), 13 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 28V
Supplier Device Package: 14-SOIC
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width), 13 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 28V
Supplier Device Package: 14-SOIC
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| LMV981MU3TBG |
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Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT 8ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 95µA
Slew Rate: 0.48V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-ULLGA (1.5x1.5)
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
Description: IC OPAMP GP 1 CIRCUIT 8ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 95µA
Slew Rate: 0.48V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-ULLGA (1.5x1.5)
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
на замовлення 1940 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 592+ | 39.45 грн |
| FDB110N15A |
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Виробник: onsemi
Description: MOSFET N-CH 150V 92A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 92A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 75 V
Description: MOSFET N-CH 150V 92A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 92A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 75 V
на замовлення 3238 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 399.83 грн |
| 10+ | 323.45 грн |
| 100+ | 261.66 грн |
| NSV40300MZ4T1G |
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Виробник: onsemi
Description: TRANS PNP 40V 3A SOT223
Description: TRANS PNP 40V 3A SOT223
на замовлення 13000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 19.34 грн |
| 2000+ | 16.98 грн |
| 5000+ | 15.89 грн |
| 10000+ | 13.88 грн |
| NSV40300MZ4T1G |
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Виробник: onsemi
Description: TRANS PNP 40V 3A SOT223
Description: TRANS PNP 40V 3A SOT223
на замовлення 13000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 51.22 грн |
| 2SB1468R |
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Виробник: onsemi
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 250mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 2 W
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 250mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 2 W
на замовлення 948 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 592+ | 38.90 грн |
| LC824100-09F-TBM-GBE |
Виробник: onsemi
Description: LC824100-09F-TBM-GBE
Description: LC824100-09F-TBM-GBE
товару немає в наявності
В кошику
од. на суму грн.
| NCP1280DR2G |
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Виробник: onsemi
Description: IC OFFLINE SW MULT TOP 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 62%, 80%
Frequency - Switching: 150kHz ~ 300kHz
Internal Switch(s): No
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Forward, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 7V ~ 25V
Supplier Device Package: 16-SOIC
Fault Protection: Current Limiting, Over Voltage
Voltage - Start Up: 11 V
Control Features: Frequency Control, Soft Start
Description: IC OFFLINE SW MULT TOP 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 62%, 80%
Frequency - Switching: 150kHz ~ 300kHz
Internal Switch(s): No
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Forward, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 7V ~ 25V
Supplier Device Package: 16-SOIC
Fault Protection: Current Limiting, Over Voltage
Voltage - Start Up: 11 V
Control Features: Frequency Control, Soft Start
на замовлення 58243 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 201+ | 111.30 грн |
| SMSZ1600-25T3DS |
Виробник: onsemi
Description: DIODE ZENER 0.5W SPCL SOD123
Description: DIODE ZENER 0.5W SPCL SOD123
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15000+ | 1.59 грн |
| NCP154MX330300TAG |
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Виробник: onsemi
Description: IC REG LINEAR 3V/3.3V 8XDFN
Description: IC REG LINEAR 3V/3.3V 8XDFN
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1027+ | 24.30 грн |
| NCP154MX180300TAG |
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Виробник: onsemi
Description: IC REG LINEAR 1.8V/3V 8XDFN
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 8-XDFN (1.6x1.2)
Voltage - Output (Min/Fixed): 1.8V, 3V
Control Features: Enable
Part Status: Obsolete
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.39V @ 300mA, 0.26V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
Description: IC REG LINEAR 1.8V/3V 8XDFN
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 8-XDFN (1.6x1.2)
Voltage - Output (Min/Fixed): 1.8V, 3V
Control Features: Enable
Part Status: Obsolete
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.39V @ 300mA, 0.26V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
на замовлення 32940 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 944+ | 24.32 грн |
| NSV40300CTWG |
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Виробник: onsemi
Description: PNP LFPAK4 BIP POWER TRAN
Description: PNP LFPAK4 BIP POWER TRAN
товару немає в наявності
В кошику
од. на суму грн.
| 74AC10PC |
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Виробник: onsemi
Description: IC GATE NAND 3CH 3-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 3CH 3-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
товару немає в наявності
В кошику
од. на суму грн.
| 74AC10SJ |
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Виробник: onsemi
Description: IC GATE NAND 3CH 3-INP 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 3CH 3-INP 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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В кошику
од. на суму грн.
| 74AC10MTCX |
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Виробник: onsemi
Description: IC GATE NAND 3CH 3-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 3CH 3-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
товару немає в наявності
В кошику
од. на суму грн.
| 74AC10SC | ![]() |
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Виробник: onsemi
Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
товару немає в наявності
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од. на суму грн.
| 74AC10SCX |
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Виробник: onsemi
Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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| 74AC10SJX |
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Виробник: onsemi
Description: IC GATE NAND 3CH 3-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 3CH 3-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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| TN5D51A-R-HCC11-E |
Виробник: onsemi
Description: IC REG BUCK 12V 5A TO220F5I5H-HB
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -10°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 150kHz
Voltage - Input (Max): 48V
Topology: Buck
Supplier Device Package: TO-220F5I5H-HB
Synchronous Rectifier: No
Voltage - Input (Min): 20V
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
Description: IC REG BUCK 12V 5A TO220F5I5H-HB
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -10°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 150kHz
Voltage - Input (Max): 48V
Topology: Buck
Supplier Device Package: TO-220F5I5H-HB
Synchronous Rectifier: No
Voltage - Input (Min): 20V
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
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| TN8D51A-HB11-E |
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Виробник: onsemi
Description: IC REG BUCK 12V 8A TO220F5I5H-HB
Packaging: Bulk
Package / Case: TO-220-5 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -10°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 150kHz
Voltage - Input (Max): 48V
Topology: Buck
Supplier Device Package: TO-220F5I5H-HB
Synchronous Rectifier: No
Voltage - Input (Min): 20V
Voltage - Output (Min/Fixed): 12V
Description: IC REG BUCK 12V 8A TO220F5I5H-HB
Packaging: Bulk
Package / Case: TO-220-5 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -10°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 150kHz
Voltage - Input (Max): 48V
Topology: Buck
Supplier Device Package: TO-220F5I5H-HB
Synchronous Rectifier: No
Voltage - Input (Min): 20V
Voltage - Output (Min/Fixed): 12V
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| TN8D41A-HB11-E |
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Виробник: onsemi
Description: IC REG BUCK 5V 8A TO220FL
Description: IC REG BUCK 5V 8A TO220FL
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| NSS20500UW3TBG |
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Виробник: onsemi
Description: TRANS PNP 20V 5A 3WDFN
Packaging: Tape & Reel (TR)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 3-WDFN (2x2)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 875 mW
Description: TRANS PNP 20V 5A 3WDFN
Packaging: Tape & Reel (TR)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 3-WDFN (2x2)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 875 mW
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| NSS20500UW3TBG |
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Виробник: onsemi
Description: TRANS PNP 20V 5A 3WDFN
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 3-WDFN (2x2)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 875 mW
Description: TRANS PNP 20V 5A 3WDFN
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 3-WDFN (2x2)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 875 mW
на замовлення 1391 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.57 грн |
| 10+ | 31.98 грн |
| 100+ | 21.85 грн |
| 500+ | 16.14 грн |
| 1000+ | 14.70 грн |
| 2SK4065-DL-1EX |
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Виробник: onsemi
Description: 2SK4065 - MOSFET N-CHANNEL 75V T
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-263-2
Part Status: Active
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
Description: 2SK4065 - MOSFET N-CHANNEL 75V T
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-263-2
Part Status: Active
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
на замовлення 3140 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 124+ | 183.92 грн |
| 2SK4084LS |
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Виробник: onsemi
Description: 2SK4084LS - MOSFET, T14A, 500V,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Description: 2SK4084LS - MOSFET, T14A, 500V,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
на замовлення 941 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 214+ | 110.96 грн |
| 2SK443-6-TB-E-ON |
на замовлення 18333 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3643+ | 5.81 грн |
| 2SK4067-N-TL-E |
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на замовлення 4900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2049+ | 11.40 грн |
| SI9936DY | ![]() |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 30V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
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| NTH4L067N65S3H |
![]() |
Виробник: onsemi
Description: SUPERFET3 FAST 67MOHM TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
Description: SUPERFET3 FAST 67MOHM TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
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| SZNSQA6V8AW5T2G |
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Виробник: onsemi
Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.55 грн |
| 6000+ | 7.13 грн |
| 9000+ | 7.06 грн |
| 75000+ | 6.56 грн |
| SZNSQA6V8AW5T2G |
![]() |
Виробник: onsemi
Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 77774 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.83 грн |
| 14+ | 23.71 грн |
| 100+ | 15.73 грн |
| 500+ | 11.35 грн |
| 1000+ | 10.24 грн |
| NTMFD0D9N02P1E |
Виробник: onsemi
Description: IFET 25V 0.9 MOHM PQFN56MP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 1.04W (Ta)
Drain to Source Voltage (Vdss): 30V, 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Description: IFET 25V 0.9 MOHM PQFN56MP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 1.04W (Ta)
Drain to Source Voltage (Vdss): 30V, 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
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| FDMS86263P-23507X |
Виробник: onsemi
Description: FET -150V 53.0 MOHM PQFN56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
Description: FET -150V 53.0 MOHM PQFN56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
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| 2SA1770S-AN |
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Виробник: onsemi
Description: TRANS PNP 160V 1.5A 3NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NMP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
Description: TRANS PNP 160V 1.5A 3NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NMP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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| CNY173SVM |
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Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 1725 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 48.74 грн |
| 10+ | 32.54 грн |
| 100+ | 23.68 грн |
| 500+ | 18.48 грн |
| 1000+ | 17.25 грн |
| CNY173SVM |
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Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 324 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 48.74 грн |
| 50+ | 25.90 грн |
| 100+ | 23.68 грн |
| CAV25512YE-GT3 |
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Виробник: onsemi
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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од. на суму грн.
| CAV25512YE-GT3 |
![]() |
Виробник: onsemi
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 3252 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.70 грн |
| 10+ | 81.22 грн |
| 25+ | 78.94 грн |
| 50+ | 73.71 грн |
| 100+ | 65.90 грн |
| 250+ | 65.70 грн |
| 500+ | 63.65 грн |
| 1000+ | 60.95 грн |
| NDUL03N150CG |
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Виробник: onsemi
Description: MOSFET N-CH 1500V 2.5A TO3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Supplier Device Package: TO-3P(L)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
Description: MOSFET N-CH 1500V 2.5A TO3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Supplier Device Package: TO-3P(L)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
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| SB01-05C-TB-E |
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Виробник: onsemi
Description: DIODE SCHOTTKY 50V 100MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
Description: DIODE SCHOTTKY 50V 100MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
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| SB01-05C-TB-E |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 50V 100MA 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
Description: DIODE SCHOTTKY 50V 100MA 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
на замовлення 1911 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.30 грн |
| 14+ | 24.02 грн |
| 100+ | 15.27 грн |
| 500+ | 10.76 грн |
| 1000+ | 9.61 грн |
| NSVDTC123JET1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 99000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.73 грн |
| 6000+ | 2.35 грн |
| 9000+ | 2.20 грн |
| 15000+ | 1.92 грн |
| 21000+ | 1.82 грн |
| 30000+ | 1.74 грн |
| 75000+ | 1.52 грн |
| NSVDTC123JET1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 101950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.04 грн |
| 40+ | 8.03 грн |
| 100+ | 5.00 грн |
| 500+ | 3.41 грн |
| 1000+ | 3.00 грн |
| FW261-TL-E |
Виробник: onsemi
Description: NCH+NCH 4V DRIVE SERIES
Description: NCH+NCH 4V DRIVE SERIES
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2885+ | 7.97 грн |
| MCH6661-TL-W |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 1.8A SOT363
Description: MOSFET 2N-CH 30V 1.8A SOT363
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| MC100LVEP210FAG |
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Виробник: onsemi
Description: IC CLK BUFFER 1:5 3GHZ 32LQFP
Packaging: Bulk
Package / Case: 32-LQFP
Number of Circuits: 2
Mounting Type: Surface Mount
Output: ECL, PECL
Type: Fanout Buffer (Distribution)
Input: ECL, HSTL, LVDS, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.8V
Ratio - Input:Output: 1:5
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Frequency - Max: 3 GHz
Description: IC CLK BUFFER 1:5 3GHZ 32LQFP
Packaging: Bulk
Package / Case: 32-LQFP
Number of Circuits: 2
Mounting Type: Surface Mount
Output: ECL, PECL
Type: Fanout Buffer (Distribution)
Input: ECL, HSTL, LVDS, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.8V
Ratio - Input:Output: 1:5
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Frequency - Max: 3 GHz
на замовлення 14492 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 1143.31 грн |
| FQU1N80TU |
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Виробник: onsemi
Description: MOSFET N-CH 800V 1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Description: MOSFET N-CH 800V 1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
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