Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102536) > Сторінка 1701 з 1709
Фото | Назва | Виробник | Інформація |
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DTA144TUAT106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Current gain: 100...600 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DTA144EETL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTA144ECAHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DTA143EMFHAT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Current gain: 30 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RB501SM-30FHT2R | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.1A; reel,tape Type of diode: Schottky rectifying Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.1A Semiconductor structure: single diode Max. forward impulse current: 1A Kind of package: reel; tape Max. forward voltage: 0.35V Leakage current: 10µA |
на замовлення 4078 шт: термін постачання 21-30 дні (днів) |
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RB021VAM90TR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD323HE; SMD; 90V; 0.2A; reel,tape Max. forward voltage: 0.49V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 5A Leakage current: 0.9mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SOD323HE Max. off-state voltage: 90V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RB160LAM-40TFTR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD128 Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.1mA |
на замовлення 5930 шт: термін постачання 21-30 дні (днів) |
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RB160L-40TE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: DO214AC; SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 70A Kind of package: reel; tape |
на замовлення 1310 шт: термін постачання 21-30 дні (днів) |
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RB160LAM-40TR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD128 Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.1mA |
на замовлення 2972 шт: термін постачання 21-30 дні (днів) |
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RGS60TS65DHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 111W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 90A Mounting: THT Gate charge: 36nC Kind of package: tube Turn-on time: 46ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 427 шт: термін постачання 21-30 дні (днів) |
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DAN217UMFHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A Type of diode: switching Case: SOT323F Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Semiconductor structure: double series Max. forward voltage: 1.2V Max. forward impulse current: 4A Kind of package: reel; tape Max. load current: 0.3A Reverse recovery time: 4ns Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTA123EKAT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 20 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
RSQ015P10FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6 Type of transistor: P-MOSFET Mounting: SMD Case: TSMT6 Drain-source voltage: -100V Drain current: -1.5A On-state resistance: 0.54Ω Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -6A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RB161MM-20TR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape Case: SOD123F Mounting: SMD Max. off-state voltage: 20V Max. forward voltage: 0.35V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Leakage current: 0.7mA Kind of package: reel; tape Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
RSQ030N08HZGTR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RSF015N06TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 800mW; TUMT3 Mounting: SMD Case: TUMT3 Drain-source voltage: 60V Drain current: 1.5A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 6A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RSQ015N06TR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 1.25W; TSMT6 Mounting: SMD Case: TSMT6 Drain-source voltage: 60V Drain current: 1.5A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 6A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RSF015N06FRATL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 45V; 1.5A; Idm: 6A; 800mW; TUMT3 Mounting: SMD Case: TUMT3 Drain-source voltage: 45V Drain current: 1.5A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 6A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BH3548F-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: audio amplifier; Pout: 62mW; headphone driver; 4÷5.5VDC; Ch: 2 Case: SOP8 Supply voltage: 4...5.5V DC Type of integrated circuit: audio amplifier Number of channels: 2 Output power: 62mW Integrated circuit features: headphone driver Kind of package: reel; tape Amplifier class: AB Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
2SA2029T2LR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT723 Mounting: SMD Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Case: SOT723 Frequency: 140MHz Collector-emitter voltage: 50V Current gain: 180...390 Collector current: 0.15A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
2SA2029T2LQ | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT723 Mounting: SMD Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Case: SOT723 Frequency: 140MHz Collector-emitter voltage: 50V Current gain: 120...270 Collector current: 0.15A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RD3S100CNTL1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 190V; 10A; Idm: 40A; 85W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 190V Drain current: 10A Pulsed drain current: 40A Power dissipation: 85W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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UMX18NTN | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN x2; bipolar; complementary pair; 12V; 0.5A; 150mW Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 320MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTDG14GPT100 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 500mW; SC62,SOT89; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.5W Case: SC62; SOT89 Current gain: 300 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
RUF015N02TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 3A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 0.8W Case: TUMT3 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 1.5A On-state resistance: 0.31Ω Gate charge: 1.8nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BD4933FVE-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Manufacturer series: BD49 Operating temperature: -40...105°C Case: VSOF5 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 3.3V Kind of integrated circuit: voltage detector Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BD4933G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Manufacturer series: BD49 Operating temperature: -40...105°C Case: SSOP5 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 3.3V Kind of integrated circuit: voltage detector Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BU4933FVE-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Manufacturer series: BU49 Operating temperature: -40...125°C Case: VSOP5 Supply voltage: 700mV DC...7V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 3.3V Kind of integrated circuit: voltage detector Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BU4933G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Manufacturer series: BU49 Operating temperature: -40...125°C Case: SSOP5 Supply voltage: 700mV DC...7V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 3.3V Kind of integrated circuit: voltage detector Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2SC3838KT146N | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 11V; 50mA; 200mW; SC59,SOT346 Kind of package: reel; tape Polarisation: bipolar Mounting: SMD Case: SC59; SOT346 Frequency: 3.2GHz Collector-emitter voltage: 11V Current gain: 56...120 Collector current: 50mA Type of transistor: NPN Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC3838KT146P | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; RF; 11V; 50mA; 200mW; SOT346 Kind of package: reel; tape Polarisation: bipolar Kind of transistor: RF Mounting: SMD Case: SOT346 Frequency: 3.2GHz Collector-emitter voltage: 11V Current gain: 56...270 Collector current: 50mA Type of transistor: NPN Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
RHK003N06FRAT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.2W Case: SMT3 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RTL035N03TR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1W; TUMT6 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1W Case: TUMT6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 3.5A On-state resistance: 79mΩ Gate charge: 4.6nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 14A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2SD1484KT146R | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 50V; 0.5A; 200mW; SC59,SOT346 Mounting: SMD Case: SC59; SOT346 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 180...390 Collector current: 0.5A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RXH125N03TB1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.5A Pulsed drain current: 36A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 12.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMLVN6RGB1U1 | ROHM SEMICONDUCTOR |
![]() Description: LED; RGB; SMD; 1411,PLCC6; 2.1/3.3/3.3VDC; 3.5x2.8x0.6mm; 20mA Type of diode: LED LED colour: RGB Mounting: SMD Case: 1411; PLCC6 Dimensions: 3.5x2.8x0.6mm Wavelength: 465...475nm; 520...535nm; 619...629nm LED version: tricolour Luminosity of red colour: 450...700mcd Luminosity of blue colour: 220...400mcd Luminosity of green colour: 710...1200mcd LED current: 20mA Operating voltage: 2.1/3.3/3.3V DC Front: flat |
на замовлення 842 шт: термін постачання 21-30 дні (днів) |
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BH3547F-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: audio amplifier; Pout: 77mW; headphone driver; 4.5÷6.5VDC Type of integrated circuit: audio amplifier Output power: 77mW Integrated circuit features: headphone driver Mounting: SMD Supply voltage: 4.5...6.5V DC Number of channels: 2 Amplifier class: AB Case: SOP8 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RGT16NL65DGTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 650V; 8A; 47W; TO263 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 8A Pulsed collector current: 24A Turn-on time: 27ns Turn-off time: 170ns Type of transistor: IGBT Power dissipation: 47W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 21nC Mounting: SMD Case: TO263 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RGT50NL65DGTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 650V; 25A; 97W; TO263 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: TO263 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BU7486FVM-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: operational amplifier; Ch: 2; MSOP8; 3÷5.5VDC; reel,tape Kind of package: reel; tape Operating temperature: -40...85°C Slew rate: 10V/μs Input offset current: 1pA Input bias current: 1pA Voltage supply range: 3...5.5V DC Mounting: SMT Case: MSOP8 Type of integrated circuit: operational amplifier Number of channels: 2 Input offset voltage: 9.5mV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BD5336G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Kind of RESET output: CMOS Active logical level: low Supply voltage: 950mV DC...10V DC Case: SSOP5 Operating temperature: -40...105°C Mounting: SMD Threshold on-voltage: 3.6V Kind of package: reel; tape Number of channels: 1 Integrated circuit features: ±1% accuracy Manufacturer series: BD53 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IMX8T108 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN x2; bipolar; 120V; 50mA; 300mW; SC74,SOT457 Case: SC74; SOT457 Mounting: SMD Collector-emitter voltage: 120V Current gain: 180...820 Collector current: 50mA Type of transistor: NPN x2 Power dissipation: 0.3W Polarisation: bipolar Kind of package: reel; tape Frequency: 140MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DTC114YMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.15W Current gain: 68 Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTA123JMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 80 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Case: SOT723 |
на замовлення 980 шт: термін постачання 21-30 дні (днів) |
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DTA123EETL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416 Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Case: SC75A; SOT416 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DTA123JEFRATL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 80 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Case: SC75A; SOT416 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DTA123JETL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 80 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Case: SC75A; SOT416 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTA123JKAT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 80 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTA123YKAT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 33 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C3V3LYT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 3.3V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BD2245G-MGTR | ROHM SEMICONDUCTOR |
![]() Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SSOP6 Type of integrated circuit: power switch Case: SSOP6 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.8...5.5V On-state resistance: 0.13Ω Output current: 1.5A Number of channels: 1 Kind of output: N-Channel Active logical level: low Protection: over current OCP; overheating OTP; undervoltage UVP Kind of integrated circuit: high-side |
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В кошику од. на суму грн. | |||||||||||||||
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2SA2071P5T100Q | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 60V; 3A; 500mW; SC62,SOT89 Mounting: SMD Type of transistor: PNP Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Case: SC62; SOT89 Frequency: 180MHz Collector-emitter voltage: 60V Current gain: 120...270 Collector current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
2SA2030T2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 12V; 0.5A; 150mW; SOT723 Mounting: SMD Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Case: SOT723 Frequency: 260MHz Collector-emitter voltage: 12V Current gain: 270...680 Collector current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
2SA2094TLQ | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 60V; 2A; 500mW; SC96 Mounting: SMD Type of transistor: PNP Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Case: SC96 Frequency: 300MHz Collector-emitter voltage: 60V Current gain: 120...270 Collector current: 2A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PDZVTR3.6B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode; 60uA Type of diode: Zener Power dissipation: 1W Zener voltage: 3.6V Kind of package: reel; tape Case: SOD128 Mounting: SMD Semiconductor structure: single diode Leakage current: 60µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PDZVTR3.9B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD128; single diode; 40uA Type of diode: Zener Power dissipation: 1W Zener voltage: 3.9V Kind of package: reel; tape Case: SOD128 Mounting: SMD Semiconductor structure: single diode Leakage current: 40µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PDZVTFTR3.6B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode; 60uA Type of diode: Zener Power dissipation: 1W Zener voltage: 3.6V Kind of package: reel; tape Case: SOD128 Mounting: SMD Semiconductor structure: single diode Leakage current: 60µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PDZVTFTR3.0B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 3V; SMD; reel,tape; SOD128; single diode; 100uA Type of diode: Zener Power dissipation: 1W Zener voltage: 3V Kind of package: reel; tape Case: SOD128 Mounting: SMD Semiconductor structure: single diode Leakage current: 0.1mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RCX160N20 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 16A Pulsed drain current: 64A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 410mΩ Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SH8M41GZETB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 80/-80V Drain current: 3.4/-2.6A Pulsed drain current: 10.4...13.6A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 160/310mΩ Mounting: SMD Gate charge: 6.6/8.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
DTA144TUAT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Current gain: 100...600
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Current gain: 100...600
товару немає в наявності
В кошику
од. на суму грн.
DTA144EETL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
товару немає в наявності
В кошику
од. на суму грн.
DTA144ECAHZGT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
товару немає в наявності
В кошику
од. на суму грн.
DTA143EMFHAT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 30
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 30
товару немає в наявності
В кошику
од. на суму грн.
RB501SM-30FHT2R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. forward voltage: 0.35V
Leakage current: 10µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. forward voltage: 0.35V
Leakage current: 10µA
на замовлення 4078 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.58 грн |
59+ | 6.43 грн |
77+ | 4.93 грн |
116+ | 3.27 грн |
571+ | 1.59 грн |
1571+ | 1.50 грн |
RB021VAM90TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 90V; 0.2A; reel,tape
Max. forward voltage: 0.49V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.9mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD323HE
Max. off-state voltage: 90V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 90V; 0.2A; reel,tape
Max. forward voltage: 0.49V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.9mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD323HE
Max. off-state voltage: 90V
товару немає в наявності
В кошику
од. на суму грн.
RB160LAM-40TFTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.1mA
на замовлення 5930 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 22.79 грн |
27+ | 14.36 грн |
100+ | 10.36 грн |
128+ | 7.11 грн |
350+ | 6.73 грн |
RB160L-40TE25 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
на замовлення 1310 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.00 грн |
19+ | 20.11 грн |
100+ | 12.77 грн |
108+ | 8.24 грн |
295+ | 7.79 грн |
RB160LAM-40TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.1mA
на замовлення 2972 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 29.31 грн |
20+ | 19.80 грн |
24+ | 16.33 грн |
50+ | 10.36 грн |
100+ | 8.69 грн |
140+ | 6.43 грн |
385+ | 6.12 грн |
RGS60TS65DHRC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 427 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 429.82 грн |
4+ | 294.04 грн |
9+ | 278.17 грн |
DAN217UMFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Case: SOT323F
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: double series
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.3A
Reverse recovery time: 4ns
Power dissipation: 0.2W
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Case: SOT323F
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: double series
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.3A
Reverse recovery time: 4ns
Power dissipation: 0.2W
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DTA123EKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 20
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SC59; SOT346
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 20
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SC59; SOT346
товару немає в наявності
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од. на суму грн.
RSQ015P10FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSMT6
Drain-source voltage: -100V
Drain current: -1.5A
On-state resistance: 0.54Ω
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -6A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSMT6
Drain-source voltage: -100V
Drain current: -1.5A
On-state resistance: 0.54Ω
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -6A
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RB161MM-20TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Max. forward voltage: 0.35V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 0.7mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Max. forward voltage: 0.35V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 0.7mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
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RSQ030N08HZGTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSF015N06TL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 6A
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RSQ015N06TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 6A
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RSF015N06FRATL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 1.5A; Idm: 6A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Drain-source voltage: 45V
Drain current: 1.5A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 1.5A; Idm: 6A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Drain-source voltage: 45V
Drain current: 1.5A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 6A
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BH3548F-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 62mW; headphone driver; 4÷5.5VDC; Ch: 2
Case: SOP8
Supply voltage: 4...5.5V DC
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 62mW
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Mounting: SMD
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 62mW; headphone driver; 4÷5.5VDC; Ch: 2
Case: SOP8
Supply voltage: 4...5.5V DC
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 62mW
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Mounting: SMD
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2SA2029T2LR |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT723
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT723
Frequency: 140MHz
Collector-emitter voltage: 50V
Current gain: 180...390
Collector current: 0.15A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT723
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT723
Frequency: 140MHz
Collector-emitter voltage: 50V
Current gain: 180...390
Collector current: 0.15A
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2SA2029T2LQ |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT723
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT723
Frequency: 140MHz
Collector-emitter voltage: 50V
Current gain: 120...270
Collector current: 0.15A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT723
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT723
Frequency: 140MHz
Collector-emitter voltage: 50V
Current gain: 120...270
Collector current: 0.15A
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RD3S100CNTL1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 10A; Idm: 40A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 190V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 10A; Idm: 40A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 190V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
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UMX18NTN |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; complementary pair; 12V; 0.5A; 150mW
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; complementary pair; 12V; 0.5A; 150mW
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
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DTDG14GPT100 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 500mW; SC62,SOT89; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 500mW; SC62,SOT89; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Base-emitter resistor: 10kΩ
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RUF015N02TL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 3A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.8W
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.31Ω
Gate charge: 1.8nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 3A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.8W
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.31Ω
Gate charge: 1.8nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 3A
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BD4933FVE-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Operating temperature: -40...105°C
Case: VSOF5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Operating temperature: -40...105°C
Case: VSOF5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
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BD4933G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
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BU4933FVE-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Operating temperature: -40...125°C
Case: VSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Operating temperature: -40...125°C
Case: VSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
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BU4933G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Operating temperature: -40...125°C
Case: SSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Operating temperature: -40...125°C
Case: SSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
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2SC3838KT146N |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 11V; 50mA; 200mW; SC59,SOT346
Kind of package: reel; tape
Polarisation: bipolar
Mounting: SMD
Case: SC59; SOT346
Frequency: 3.2GHz
Collector-emitter voltage: 11V
Current gain: 56...120
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 11V; 50mA; 200mW; SC59,SOT346
Kind of package: reel; tape
Polarisation: bipolar
Mounting: SMD
Case: SC59; SOT346
Frequency: 3.2GHz
Collector-emitter voltage: 11V
Current gain: 56...120
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.2W
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2SC3838KT146P |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 50mA; 200mW; SOT346
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT346
Frequency: 3.2GHz
Collector-emitter voltage: 11V
Current gain: 56...270
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 50mA; 200mW; SOT346
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT346
Frequency: 3.2GHz
Collector-emitter voltage: 11V
Current gain: 56...270
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.2W
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RHK003N06FRAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SMT3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SMT3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhancement
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RTL035N03TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1W; TUMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1W
Case: TUMT6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 3.5A
On-state resistance: 79mΩ
Gate charge: 4.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 14A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1W; TUMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1W
Case: TUMT6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 3.5A
On-state resistance: 79mΩ
Gate charge: 4.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 14A
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2SD1484KT146R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 200mW; SC59,SOT346
Mounting: SMD
Case: SC59; SOT346
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 180...390
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 200mW; SC59,SOT346
Mounting: SMD
Case: SC59; SOT346
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 180...390
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
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RXH125N03TB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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SMLVN6RGB1U1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; RGB; SMD; 1411,PLCC6; 2.1/3.3/3.3VDC; 3.5x2.8x0.6mm; 20mA
Type of diode: LED
LED colour: RGB
Mounting: SMD
Case: 1411; PLCC6
Dimensions: 3.5x2.8x0.6mm
Wavelength: 465...475nm; 520...535nm; 619...629nm
LED version: tricolour
Luminosity of red colour: 450...700mcd
Luminosity of blue colour: 220...400mcd
Luminosity of green colour: 710...1200mcd
LED current: 20mA
Operating voltage: 2.1/3.3/3.3V DC
Front: flat
Category: SMD colour LEDs
Description: LED; RGB; SMD; 1411,PLCC6; 2.1/3.3/3.3VDC; 3.5x2.8x0.6mm; 20mA
Type of diode: LED
LED colour: RGB
Mounting: SMD
Case: 1411; PLCC6
Dimensions: 3.5x2.8x0.6mm
Wavelength: 465...475nm; 520...535nm; 619...629nm
LED version: tricolour
Luminosity of red colour: 450...700mcd
Luminosity of blue colour: 220...400mcd
Luminosity of green colour: 710...1200mcd
LED current: 20mA
Operating voltage: 2.1/3.3/3.3V DC
Front: flat
на замовлення 842 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 115.59 грн |
10+ | 68.48 грн |
23+ | 38.93 грн |
63+ | 36.81 грн |
BH3547F-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 77mW; headphone driver; 4.5÷6.5VDC
Type of integrated circuit: audio amplifier
Output power: 77mW
Integrated circuit features: headphone driver
Mounting: SMD
Supply voltage: 4.5...6.5V DC
Number of channels: 2
Amplifier class: AB
Case: SOP8
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 77mW; headphone driver; 4.5÷6.5VDC
Type of integrated circuit: audio amplifier
Output power: 77mW
Integrated circuit features: headphone driver
Mounting: SMD
Supply voltage: 4.5...6.5V DC
Number of channels: 2
Amplifier class: AB
Case: SOP8
Kind of package: reel; tape
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RGT16NL65DGTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO263
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 8A
Pulsed collector current: 24A
Turn-on time: 27ns
Turn-off time: 170ns
Type of transistor: IGBT
Power dissipation: 47W
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 21nC
Mounting: SMD
Case: TO263
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO263
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 8A
Pulsed collector current: 24A
Turn-on time: 27ns
Turn-off time: 170ns
Type of transistor: IGBT
Power dissipation: 47W
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 21nC
Mounting: SMD
Case: TO263
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RGT50NL65DGTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
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BU7486FVM-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; MSOP8; 3÷5.5VDC; reel,tape
Kind of package: reel; tape
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset current: 1pA
Input bias current: 1pA
Voltage supply range: 3...5.5V DC
Mounting: SMT
Case: MSOP8
Type of integrated circuit: operational amplifier
Number of channels: 2
Input offset voltage: 9.5mV
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; MSOP8; 3÷5.5VDC; reel,tape
Kind of package: reel; tape
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset current: 1pA
Input bias current: 1pA
Voltage supply range: 3...5.5V DC
Mounting: SMT
Case: MSOP8
Type of integrated circuit: operational amplifier
Number of channels: 2
Input offset voltage: 9.5mV
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BD5336G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 3.6V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD53
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 3.6V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD53
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IMX8T108 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 120V; 50mA; 300mW; SC74,SOT457
Case: SC74; SOT457
Mounting: SMD
Collector-emitter voltage: 120V
Current gain: 180...820
Collector current: 50mA
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 140MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 120V; 50mA; 300mW; SC74,SOT457
Case: SC74; SOT457
Mounting: SMD
Collector-emitter voltage: 120V
Current gain: 180...820
Collector current: 50mA
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 140MHz
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DTC114YMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.15W
Current gain: 68
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.15W
Current gain: 68
Frequency: 250MHz
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DTA123JMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SOT723
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SOT723
на замовлення 980 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.14 грн |
81+ | 4.69 грн |
111+ | 3.42 грн |
429+ | 2.08 грн |
DTA123EETL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SC75A; SOT416
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SC75A; SOT416
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DTA123JEFRATL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SC75A; SOT416
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SC75A; SOT416
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DTA123JETL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SC75A; SOT416
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SC75A; SOT416
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DTA123JKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SC59; SOT346
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SC59; SOT346
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DTA123YKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Case: SC59; SOT346
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Case: SC59; SOT346
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BZX84C3V3LYT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
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BD2245G-MGTR |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SSOP6
Type of integrated circuit: power switch
Case: SSOP6
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.8...5.5V
On-state resistance: 0.13Ω
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Active logical level: low
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SSOP6
Type of integrated circuit: power switch
Case: SSOP6
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.8...5.5V
On-state resistance: 0.13Ω
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Active logical level: low
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
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2SA2071P5T100Q |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 500mW; SC62,SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
Frequency: 180MHz
Collector-emitter voltage: 60V
Current gain: 120...270
Collector current: 3A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 500mW; SC62,SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
Frequency: 180MHz
Collector-emitter voltage: 60V
Current gain: 120...270
Collector current: 3A
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2SA2030T2L |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 0.5A; 150mW; SOT723
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT723
Frequency: 260MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 0.5A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 0.5A; 150mW; SOT723
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT723
Frequency: 260MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 0.5A
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2SA2094TLQ |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 500mW; SC96
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC96
Frequency: 300MHz
Collector-emitter voltage: 60V
Current gain: 120...270
Collector current: 2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 500mW; SC96
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC96
Frequency: 300MHz
Collector-emitter voltage: 60V
Current gain: 120...270
Collector current: 2A
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PDZVTR3.6B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode; 60uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 60µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode; 60uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 60µA
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PDZVTR3.9B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD128; single diode; 40uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 40µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD128; single diode; 40uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 40µA
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PDZVTFTR3.6B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode; 60uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 60µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode; 60uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 60µA
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PDZVTFTR3.0B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3V; SMD; reel,tape; SOD128; single diode; 100uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.1mA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3V; SMD; reel,tape; SOD128; single diode; 100uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.1mA
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RCX160N20 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
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SH8M41GZETB |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 80/-80V
Drain current: 3.4/-2.6A
Pulsed drain current: 10.4...13.6A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 160/310mΩ
Mounting: SMD
Gate charge: 6.6/8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 80/-80V
Drain current: 3.4/-2.6A
Pulsed drain current: 10.4...13.6A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 160/310mΩ
Mounting: SMD
Gate charge: 6.6/8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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