Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102204) > Сторінка 1702 з 1704
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| EDZVFHT2R6.2B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 6.2V; SMD; reel,tape; SC79,SOD523; 1uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 6.2V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| EDZVFHT2R7.5B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 7.5V; SMD; reel,tape; SC79,SOD523; 500nA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 7.5V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| EDZVT2R10B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 10V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 10V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| EDZVT2R18B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 18V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 18V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| EDZVT2R20B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 20V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 20V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| EDZVT2R24B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 24V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 24V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| EDZVT2R3.0B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 3V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 3V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| EDZVT2R3.9B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 3.9V; SMD; reel,tape; SC79,SOD523; 5uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 3.9V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| EDZVT2R30B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 30V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 30V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| EDZVT2R33B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 33V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 33V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| EDZVT2R4.3B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 4.3V; SMD; reel,tape; SC79,SOD523; 5uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 4.3V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| EDZVT2R5.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 5.6V; SMD; reel,tape; SC79,SOD523F; 1uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 5.6V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523F Semiconductor structure: single diode Leakage current: 1µA Tolerance: ±2% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| EDZVT2R6.2B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 6.2V; SMD; reel,tape; SC79,SOD523; 1uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 6.2V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| EDZVT2R6.8B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 6.8V; SMD; reel,tape; SC79,SOD523; 500nA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 6.8V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| EDZVT2R7.5B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 7.5V; SMD; reel,tape; SC79,SOD523; 500nA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 7.5V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CSL0901DT1 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; orange; SMD; 405mcd; 20mA; 605nm; Lens: transparent Type of diode: LED LED colour: orange Mounting: SMD Luminosity: 405mcd LED current: 20mA Wavelength: 605nm LED lens: transparent Front: convex |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2SD1898T100R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 500mW; SC62,SOT89 Case: SC62; SOT89 Mounting: SMD Kind of package: reel; tape Collector current: 1A Power dissipation: 0.5W Collector-emitter voltage: 80V Current gain: 180...390 Frequency: 100MHz Polarisation: bipolar Type of transistor: NPN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| BD5238G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Case: SSOP5 Number of channels: 1 Integrated circuit features: ±1% accuracy Mounting: SMD Operating temperature: -40...105°C Manufacturer series: BD52 Active logical level: low Kind of RESET output: open drain Kind of package: reel; tape Supply voltage: 950mV DC...10V DC Threshold on-voltage: 3.8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DTDG23YPT100 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 60V; 1A; 1.5W; SC62,SOT89; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1.5W Case: SC62; SOT89 Current gain: 300 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| BD45271G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Manufacturer series: BD45 Kind of integrated circuit: voltage detector Active logical level: low Integrated circuit features: Counter Timer Built-in Supply voltage: 950mV DC...10V DC Number of channels: 1 Threshold on-voltage: 2.7V Operating temperature: -40...105°C Kind of RESET output: open drain Kind of package: reel; tape Mounting: SMD Case: SSOP5 Type of integrated circuit: supervisor circuit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SML-A12V8TT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; red; SMD; 0605; 40mcd; 20mA; 630nm; Lens: transparent Case: 0605 Mounting: SMD Type of diode: LED LED colour: red LED lens: transparent Wavelength: 630nm LED current: 20mA Luminosity: 40mcd Front: flat |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BD1LB500EFJ-CE2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 800mA; Ch: 1; SMD; HTSOP-J8; -40÷150°C Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 0.8A Number of channels: 1 Mounting: SMD Case: HTSOP-J8 On-state resistance: 0.45Ω Operating temperature: -40...150°C Supply voltage: 3.5...5.5V Protection: over current OCP; overheating OTP; undervoltage UVP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BD1LB500FVM-CGTR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 800mA; Ch: 1; SMD; MSOP8; -40÷150°C Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 0.8A Number of channels: 1 Mounting: SMD Case: MSOP8 On-state resistance: 0.45Ω Operating temperature: -40...150°C Supply voltage: 3.5...5.5V Protection: over current OCP; overheating OTP; undervoltage UVP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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RB160VAM-40TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323HE; SMD; 40V Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 40V Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 10A Leakage current: 50µA |
на замовлення 442 шт: термін постачання 21-30 дні (днів) |
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RB160LAM-40TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD128 Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.1mA |
на замовлення 2466 шт: термін постачання 21-30 дні (днів) |
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RB160LAM-40TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD128 Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.1mA |
на замовлення 5924 шт: термін постачання 21-30 дні (днів) |
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RBR5LAM60ATFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD128; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: SOD128 Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 100A Kind of package: reel; tape Leakage current: 0.25mA |
на замовлення 42 шт: термін постачання 21-30 дні (днів) |
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RSS060P05FRATB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8 Mounting: SMD Kind of package: reel; tape Case: SOP8 Polarisation: unipolar Drain-source voltage: -45V Pulsed drain current: -24A Gate charge: 23nC On-state resistance: 53mΩ Power dissipation: 2W Gate-source voltage: ±20V Drain current: -6A Kind of channel: enhancement Type of transistor: P-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RSS090N03FRATB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8 Mounting: SMD Kind of package: reel; tape Case: SOP8 Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 36A Gate charge: 11nC On-state resistance: 24mΩ Power dissipation: 2W Gate-source voltage: ±20V Drain current: 9A Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| BA7815FP-E2 | ROHM SEMICONDUCTOR |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; fixed; 15V; 1A; TO252-3; SMD; reel,tape; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed Voltage drop: 2V Output voltage: 15V Output current: 1A Case: TO252-3 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Number of channels: 1 Input voltage: 17.5...30V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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RQ3E120GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 48A; 15W; HSMT8 Case: HSMT8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 10nC On-state resistance: 13.8mΩ Power dissipation: 15W Drain current: 27A Pulsed drain current: 48A |
на замовлення 2761 шт: термін постачання 21-30 дні (днів) |
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RF4E080GNTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S Case: DFN2020-8S Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 5.8nC On-state resistance: 17.6mΩ Power dissipation: 2W Drain current: 8A Pulsed drain current: 32A |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
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| RF4E110GNTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 2W; DFN2020-8S Case: DFN2020-8S Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 7.4nC On-state resistance: 11.3mΩ Power dissipation: 2W Drain current: 11A Pulsed drain current: 44A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RQ3G100GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 40A; 15W; HSMT8 Case: HSMT8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 40V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 8.4nC On-state resistance: 18.3mΩ Power dissipation: 15W Drain current: 27A Pulsed drain current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RD3G400GNTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 80A; 26W; DPAK,TO252 Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 40V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 19nC On-state resistance: 9.5mΩ Power dissipation: 26W Drain current: 40A Pulsed drain current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RD3L08BGNTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 160A; 119W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 71nC On-state resistance: 8.1mΩ Power dissipation: 119W Drain current: 80A Pulsed drain current: 160A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RJ1G12BGNTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 40V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 165nC On-state resistance: 2.08mΩ Power dissipation: 178W Drain current: 120A Pulsed drain current: 240A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RJ1L12BGNTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 175nC On-state resistance: 4.1mΩ Power dissipation: 192W Drain current: 120A Pulsed drain current: 240A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RQ3E080GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 32A; 14W; HSMT8 Case: HSMT8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 5.8nC On-state resistance: 31.2mΩ Power dissipation: 14W Drain current: 18A Pulsed drain current: 32A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RQ3E180GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 72A; 20W; HSMT8 Case: HSMT8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 22.4nC On-state resistance: 6.1mΩ Power dissipation: 20W Drain current: 39A Pulsed drain current: 72A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RQ3G150GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 39A; Idm: 60A; 20W; HSMT8 Case: HSMT8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 40V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 24.1nC On-state resistance: 8.9mΩ Power dissipation: 20W Drain current: 39A Pulsed drain current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RQ3L050GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 20A; 14.8W; HSMT8 Case: HSMT8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 5.3nC On-state resistance: 86mΩ Power dissipation: 14.8W Drain current: 13A Pulsed drain current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RQ3L090GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 36A; 20W; HSMT8 Case: HSMT8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 24.5nC On-state resistance: 21.4mΩ Power dissipation: 20W Drain current: 30A Pulsed drain current: 36A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RQ5L035GNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 7.3nC On-state resistance: 75mΩ Power dissipation: 1W Drain current: 3.5A Pulsed drain current: 14A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RS1E301GNTB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 120A; 33W; HSOP8 Case: HSOP8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 39.8nC On-state resistance: 3.3mΩ Power dissipation: 33W Drain current: 80A Pulsed drain current: 120A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RS1E321GNTB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 128A; 34W; HSOP8 Case: HSOP8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 42.8nC On-state resistance: 2.9mΩ Power dissipation: 34W Drain current: 80A Pulsed drain current: 128A |
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| RS1L120GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 48A; 27W; HSOP8 Case: HSOP8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 26nC On-state resistance: 19.8mΩ Power dissipation: 27W Drain current: 36A Pulsed drain current: 48A |
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| RS1L145GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 47A; Idm: 58A; 31W; HSOP8 Case: HSOP8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 37nC On-state resistance: 14.1mΩ Power dissipation: 31W Drain current: 47A Pulsed drain current: 58A |
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| RS1L180GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 72A; 39W; HSOP8 Case: HSOP8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 63nC On-state resistance: 8.5mΩ Power dissipation: 39W Drain current: 68A Pulsed drain current: 72A |
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| BU7421G-TR | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiersDescription: IC: operational amplifier; Ch: 1; SSOP5; 1.7÷5.5VDC; reel,tape Kind of package: reel; tape Mounting: SMT Type of integrated circuit: operational amplifier Operating temperature: -40...85°C Input bias current: 1pA Input offset current: 1pA Input offset voltage: 6mV Number of channels: 1 Voltage supply range: 1.7...5.5V DC Slew rate: 50kV/μs Case: SSOP5 |
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| CSL0901WT1 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; yellow; SMD; 290mcd; 20mA; 587nm; Lens: transparent Type of diode: LED LED colour: yellow Mounting: SMD Luminosity: 290mcd LED current: 20mA Wavelength: 587nm LED lens: transparent Front: convex |
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В кошику од. на суму грн. | |||||||||||||
|
SCS206AJTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO263AB Max. forward voltage: 1.55V Max. load current: 26A Max. forward impulse current: 90A Power dissipation: 48W Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||
|
SCS206AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; 31W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.55V Max. load current: 21A Max. forward impulse current: 90A Power dissipation: 31W Kind of package: tube |
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В кошику од. на суму грн. | ||||||||||||
| SCS208AJHRTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO263AB Max. forward voltage: 1.63V Max. load current: 35A Max. forward impulse current: 110A Power dissipation: 62W Kind of package: reel; tape Leakage current: 0.16mA |
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В кошику од. на суму грн. | |||||||||||||
|
SCS205KGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; 88W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.6V Max. load current: 27A Max. forward impulse current: 80A Power dissipation: 88W Kind of package: tube |
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В кошику од. на суму грн. | ||||||||||||
|
SCS206AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; 51W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.55V Max. load current: 27A Max. forward impulse current: 90A Power dissipation: 51W Kind of package: tube |
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В кошику од. на суму грн. | ||||||||||||
| SCS206AJHRTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO263AB Max. forward voltage: 1.63V Max. load current: 26A Max. forward impulse current: 90A Power dissipation: 48W Kind of package: reel; tape Leakage current: 120µA |
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В кошику од. на суму грн. | |||||||||||||
|
SCS208AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; 36W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.55V Max. load current: 36A Max. forward impulse current: 110A Power dissipation: 36W Kind of package: tube |
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В кошику од. на суму грн. | ||||||||||||
|
SCS208AJTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO263AB Max. forward voltage: 1.55V Max. load current: 35A Max. forward impulse current: 110A Power dissipation: 62W Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||
|
SCS208AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; 34W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.63V Max. load current: 25A Max. forward impulse current: 110A Power dissipation: 34W Kind of package: tube |
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В кошику од. на суму грн. |
| EDZVFHT2R6.2B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 6.2V; SMD; reel,tape; SC79,SOD523; 1uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 6.2V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 6.2V; SMD; reel,tape; SC79,SOD523; 1uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 6.2V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 1µA
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| EDZVFHT2R7.5B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 7.5V; SMD; reel,tape; SC79,SOD523; 500nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 7.5V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 7.5V; SMD; reel,tape; SC79,SOD523; 500nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 7.5V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.5µA
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| EDZVT2R10B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 10V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 10V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
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| EDZVT2R18B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 18V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 18V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
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| EDZVT2R20B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 20V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 20V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
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| EDZVT2R24B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 24V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 24V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 24V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 24V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
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| EDZVT2R3.0B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 50µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 50µA
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| EDZVT2R3.9B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3.9V; SMD; reel,tape; SC79,SOD523; 5uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.9V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3.9V; SMD; reel,tape; SC79,SOD523; 5uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.9V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 5µA
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| EDZVT2R30B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 30V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 30V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
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| EDZVT2R33B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 33V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 33V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
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| EDZVT2R4.3B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 4.3V; SMD; reel,tape; SC79,SOD523; 5uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 4.3V; SMD; reel,tape; SC79,SOD523; 5uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 5µA
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| EDZVT2R5.6B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.6V; SMD; reel,tape; SC79,SOD523F; 1uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523F
Semiconductor structure: single diode
Leakage current: 1µA
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.6V; SMD; reel,tape; SC79,SOD523F; 1uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523F
Semiconductor structure: single diode
Leakage current: 1µA
Tolerance: ±2%
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| EDZVT2R6.2B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 6.2V; SMD; reel,tape; SC79,SOD523; 1uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 6.2V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 6.2V; SMD; reel,tape; SC79,SOD523; 1uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 6.2V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 1µA
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| EDZVT2R6.8B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 6.8V; SMD; reel,tape; SC79,SOD523; 500nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 6.8V; SMD; reel,tape; SC79,SOD523; 500nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.5µA
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| EDZVT2R7.5B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 7.5V; SMD; reel,tape; SC79,SOD523; 500nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 7.5V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 7.5V; SMD; reel,tape; SC79,SOD523; 500nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 7.5V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.5µA
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| CSL0901DT1 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; orange; SMD; 405mcd; 20mA; 605nm; Lens: transparent
Type of diode: LED
LED colour: orange
Mounting: SMD
Luminosity: 405mcd
LED current: 20mA
Wavelength: 605nm
LED lens: transparent
Front: convex
Category: SMD colour LEDs
Description: LED; orange; SMD; 405mcd; 20mA; 605nm; Lens: transparent
Type of diode: LED
LED colour: orange
Mounting: SMD
Luminosity: 405mcd
LED current: 20mA
Wavelength: 605nm
LED lens: transparent
Front: convex
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| 2SD1898T100R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 500mW; SC62,SOT89
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 80V
Current gain: 180...390
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 500mW; SC62,SOT89
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 80V
Current gain: 180...390
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
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| BD5238G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Case: SSOP5
Number of channels: 1
Integrated circuit features: ±1% accuracy
Mounting: SMD
Operating temperature: -40...105°C
Manufacturer series: BD52
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Supply voltage: 950mV DC...10V DC
Threshold on-voltage: 3.8V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Case: SSOP5
Number of channels: 1
Integrated circuit features: ±1% accuracy
Mounting: SMD
Operating temperature: -40...105°C
Manufacturer series: BD52
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Supply voltage: 950mV DC...10V DC
Threshold on-voltage: 3.8V
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| DTDG23YPT100 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 1.5W; SC62,SOT89; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.5W
Case: SC62; SOT89
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 1.5W; SC62,SOT89; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.5W
Case: SC62; SOT89
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
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| BD45271G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Manufacturer series: BD45
Kind of integrated circuit: voltage detector
Active logical level: low
Integrated circuit features: Counter Timer Built-in
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 2.7V
Operating temperature: -40...105°C
Kind of RESET output: open drain
Kind of package: reel; tape
Mounting: SMD
Case: SSOP5
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Manufacturer series: BD45
Kind of integrated circuit: voltage detector
Active logical level: low
Integrated circuit features: Counter Timer Built-in
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 2.7V
Operating temperature: -40...105°C
Kind of RESET output: open drain
Kind of package: reel; tape
Mounting: SMD
Case: SSOP5
Type of integrated circuit: supervisor circuit
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| SML-A12V8TT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red; SMD; 0605; 40mcd; 20mA; 630nm; Lens: transparent
Case: 0605
Mounting: SMD
Type of diode: LED
LED colour: red
LED lens: transparent
Wavelength: 630nm
LED current: 20mA
Luminosity: 40mcd
Front: flat
Category: SMD colour LEDs
Description: LED; red; SMD; 0605; 40mcd; 20mA; 630nm; Lens: transparent
Case: 0605
Mounting: SMD
Type of diode: LED
LED colour: red
LED lens: transparent
Wavelength: 630nm
LED current: 20mA
Luminosity: 40mcd
Front: flat
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| BD1LB500EFJ-CE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 800mA; Ch: 1; SMD; HTSOP-J8; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.8A
Number of channels: 1
Mounting: SMD
Case: HTSOP-J8
On-state resistance: 0.45Ω
Operating temperature: -40...150°C
Supply voltage: 3.5...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 800mA; Ch: 1; SMD; HTSOP-J8; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.8A
Number of channels: 1
Mounting: SMD
Case: HTSOP-J8
On-state resistance: 0.45Ω
Operating temperature: -40...150°C
Supply voltage: 3.5...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
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| BD1LB500FVM-CGTR |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 800mA; Ch: 1; SMD; MSOP8; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.8A
Number of channels: 1
Mounting: SMD
Case: MSOP8
On-state resistance: 0.45Ω
Operating temperature: -40...150°C
Supply voltage: 3.5...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 800mA; Ch: 1; SMD; MSOP8; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.8A
Number of channels: 1
Mounting: SMD
Case: MSOP8
On-state resistance: 0.45Ω
Operating temperature: -40...150°C
Supply voltage: 3.5...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
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| RB160VAM-40TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 10A
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 10A
Leakage current: 50µA
на замовлення 442 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.00 грн |
| 27+ | 15.04 грн |
| 50+ | 9.95 грн |
| 100+ | 8.49 грн |
| RB160LAM-40TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.1mA
на замовлення 2466 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.26 грн |
| 21+ | 20.06 грн |
| 23+ | 17.71 грн |
| 100+ | 10.59 грн |
| 500+ | 7.52 грн |
| 1000+ | 6.55 грн |
| RB160LAM-40TFTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.1mA
на замовлення 5924 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.87 грн |
| 23+ | 18.36 грн |
| 100+ | 13.34 грн |
| 500+ | 10.35 грн |
| 1000+ | 9.14 грн |
| 3000+ | 7.44 грн |
| RBR5LAM60ATFTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 0.25mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 0.25mA
на замовлення 42 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.74 грн |
| 13+ | 31.86 грн |
| RSS060P05FRATB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8
Mounting: SMD
Kind of package: reel; tape
Case: SOP8
Polarisation: unipolar
Drain-source voltage: -45V
Pulsed drain current: -24A
Gate charge: 23nC
On-state resistance: 53mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Drain current: -6A
Kind of channel: enhancement
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8
Mounting: SMD
Kind of package: reel; tape
Case: SOP8
Polarisation: unipolar
Drain-source voltage: -45V
Pulsed drain current: -24A
Gate charge: 23nC
On-state resistance: 53mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Drain current: -6A
Kind of channel: enhancement
Type of transistor: P-MOSFET
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| RSS090N03FRATB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Mounting: SMD
Kind of package: reel; tape
Case: SOP8
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 36A
Gate charge: 11nC
On-state resistance: 24mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Drain current: 9A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Mounting: SMD
Kind of package: reel; tape
Case: SOP8
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 36A
Gate charge: 11nC
On-state resistance: 24mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Drain current: 9A
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| BA7815FP-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; fixed; 15V; 1A; TO252-3; SMD; reel,tape; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 2V
Output voltage: 15V
Output current: 1A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 17.5...30V
Category: Fixed voltage regulators
Description: IC: voltage regulator; fixed; 15V; 1A; TO252-3; SMD; reel,tape; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 2V
Output voltage: 15V
Output current: 1A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 17.5...30V
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| RQ3E120GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 48A; 15W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 13.8mΩ
Power dissipation: 15W
Drain current: 27A
Pulsed drain current: 48A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 48A; 15W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 13.8mΩ
Power dissipation: 15W
Drain current: 27A
Pulsed drain current: 48A
на замовлення 2761 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.96 грн |
| 17+ | 24.42 грн |
| 100+ | 17.31 грн |
| 500+ | 15.28 грн |
| RF4E080GNTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Case: DFN2020-8S
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.8nC
On-state resistance: 17.6mΩ
Power dissipation: 2W
Drain current: 8A
Pulsed drain current: 32A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Case: DFN2020-8S
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.8nC
On-state resistance: 17.6mΩ
Power dissipation: 2W
Drain current: 8A
Pulsed drain current: 32A
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 43.54 грн |
| 16+ | 26.93 грн |
| 100+ | 17.79 грн |
| 250+ | 15.85 грн |
| RF4E110GNTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 2W; DFN2020-8S
Case: DFN2020-8S
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 7.4nC
On-state resistance: 11.3mΩ
Power dissipation: 2W
Drain current: 11A
Pulsed drain current: 44A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 2W; DFN2020-8S
Case: DFN2020-8S
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 7.4nC
On-state resistance: 11.3mΩ
Power dissipation: 2W
Drain current: 11A
Pulsed drain current: 44A
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| RQ3G100GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 40A; 15W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 8.4nC
On-state resistance: 18.3mΩ
Power dissipation: 15W
Drain current: 27A
Pulsed drain current: 40A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 40A; 15W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 8.4nC
On-state resistance: 18.3mΩ
Power dissipation: 15W
Drain current: 27A
Pulsed drain current: 40A
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| RD3G400GNTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 80A; 26W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 19nC
On-state resistance: 9.5mΩ
Power dissipation: 26W
Drain current: 40A
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 80A; 26W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 19nC
On-state resistance: 9.5mΩ
Power dissipation: 26W
Drain current: 40A
Pulsed drain current: 80A
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| RD3L08BGNTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 160A; 119W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 71nC
On-state resistance: 8.1mΩ
Power dissipation: 119W
Drain current: 80A
Pulsed drain current: 160A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 160A; 119W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 71nC
On-state resistance: 8.1mΩ
Power dissipation: 119W
Drain current: 80A
Pulsed drain current: 160A
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| RJ1G12BGNTLL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 165nC
On-state resistance: 2.08mΩ
Power dissipation: 178W
Drain current: 120A
Pulsed drain current: 240A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 165nC
On-state resistance: 2.08mΩ
Power dissipation: 178W
Drain current: 120A
Pulsed drain current: 240A
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| RJ1L12BGNTLL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 175nC
On-state resistance: 4.1mΩ
Power dissipation: 192W
Drain current: 120A
Pulsed drain current: 240A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 175nC
On-state resistance: 4.1mΩ
Power dissipation: 192W
Drain current: 120A
Pulsed drain current: 240A
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| RQ3E080GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 32A; 14W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.8nC
On-state resistance: 31.2mΩ
Power dissipation: 14W
Drain current: 18A
Pulsed drain current: 32A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 32A; 14W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.8nC
On-state resistance: 31.2mΩ
Power dissipation: 14W
Drain current: 18A
Pulsed drain current: 32A
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| RQ3E180GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 72A; 20W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 22.4nC
On-state resistance: 6.1mΩ
Power dissipation: 20W
Drain current: 39A
Pulsed drain current: 72A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 72A; 20W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 22.4nC
On-state resistance: 6.1mΩ
Power dissipation: 20W
Drain current: 39A
Pulsed drain current: 72A
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| RQ3G150GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 39A; Idm: 60A; 20W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 24.1nC
On-state resistance: 8.9mΩ
Power dissipation: 20W
Drain current: 39A
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 39A; Idm: 60A; 20W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 24.1nC
On-state resistance: 8.9mΩ
Power dissipation: 20W
Drain current: 39A
Pulsed drain current: 60A
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| RQ3L050GNTB |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 20A; 14.8W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.3nC
On-state resistance: 86mΩ
Power dissipation: 14.8W
Drain current: 13A
Pulsed drain current: 20A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 20A; 14.8W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.3nC
On-state resistance: 86mΩ
Power dissipation: 14.8W
Drain current: 13A
Pulsed drain current: 20A
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| RQ3L090GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 36A; 20W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 24.5nC
On-state resistance: 21.4mΩ
Power dissipation: 20W
Drain current: 30A
Pulsed drain current: 36A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 36A; 20W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 24.5nC
On-state resistance: 21.4mΩ
Power dissipation: 20W
Drain current: 30A
Pulsed drain current: 36A
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| RQ5L035GNTCL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 7.3nC
On-state resistance: 75mΩ
Power dissipation: 1W
Drain current: 3.5A
Pulsed drain current: 14A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 7.3nC
On-state resistance: 75mΩ
Power dissipation: 1W
Drain current: 3.5A
Pulsed drain current: 14A
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| RS1E301GNTB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 120A; 33W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39.8nC
On-state resistance: 3.3mΩ
Power dissipation: 33W
Drain current: 80A
Pulsed drain current: 120A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 120A; 33W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39.8nC
On-state resistance: 3.3mΩ
Power dissipation: 33W
Drain current: 80A
Pulsed drain current: 120A
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| RS1E321GNTB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 128A; 34W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 42.8nC
On-state resistance: 2.9mΩ
Power dissipation: 34W
Drain current: 80A
Pulsed drain current: 128A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 128A; 34W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 42.8nC
On-state resistance: 2.9mΩ
Power dissipation: 34W
Drain current: 80A
Pulsed drain current: 128A
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| RS1L120GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 48A; 27W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 26nC
On-state resistance: 19.8mΩ
Power dissipation: 27W
Drain current: 36A
Pulsed drain current: 48A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 48A; 27W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 26nC
On-state resistance: 19.8mΩ
Power dissipation: 27W
Drain current: 36A
Pulsed drain current: 48A
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| RS1L145GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 47A; Idm: 58A; 31W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 14.1mΩ
Power dissipation: 31W
Drain current: 47A
Pulsed drain current: 58A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 47A; Idm: 58A; 31W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 14.1mΩ
Power dissipation: 31W
Drain current: 47A
Pulsed drain current: 58A
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| RS1L180GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 72A; 39W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 63nC
On-state resistance: 8.5mΩ
Power dissipation: 39W
Drain current: 68A
Pulsed drain current: 72A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 72A; 39W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 63nC
On-state resistance: 8.5mΩ
Power dissipation: 39W
Drain current: 68A
Pulsed drain current: 72A
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| BU7421G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; SSOP5; 1.7÷5.5VDC; reel,tape
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 6mV
Number of channels: 1
Voltage supply range: 1.7...5.5V DC
Slew rate: 50kV/μs
Case: SSOP5
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; SSOP5; 1.7÷5.5VDC; reel,tape
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 6mV
Number of channels: 1
Voltage supply range: 1.7...5.5V DC
Slew rate: 50kV/μs
Case: SSOP5
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| CSL0901WT1 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 290mcd; 20mA; 587nm; Lens: transparent
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 290mcd
LED current: 20mA
Wavelength: 587nm
LED lens: transparent
Front: convex
Category: SMD colour LEDs
Description: LED; yellow; SMD; 290mcd; 20mA; 587nm; Lens: transparent
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 290mcd
LED current: 20mA
Wavelength: 587nm
LED lens: transparent
Front: convex
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| SCS206AJTLL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.55V
Max. load current: 26A
Max. forward impulse current: 90A
Power dissipation: 48W
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.55V
Max. load current: 26A
Max. forward impulse current: 90A
Power dissipation: 48W
Kind of package: reel; tape
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| SCS206AMC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; 31W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.55V
Max. load current: 21A
Max. forward impulse current: 90A
Power dissipation: 31W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; 31W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.55V
Max. load current: 21A
Max. forward impulse current: 90A
Power dissipation: 31W
Kind of package: tube
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| SCS208AJHRTLL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.63V
Max. load current: 35A
Max. forward impulse current: 110A
Power dissipation: 62W
Kind of package: reel; tape
Leakage current: 0.16mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.63V
Max. load current: 35A
Max. forward impulse current: 110A
Power dissipation: 62W
Kind of package: reel; tape
Leakage current: 0.16mA
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| SCS205KGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; 88W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.6V
Max. load current: 27A
Max. forward impulse current: 80A
Power dissipation: 88W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; 88W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.6V
Max. load current: 27A
Max. forward impulse current: 80A
Power dissipation: 88W
Kind of package: tube
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| SCS206AGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; 51W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 27A
Max. forward impulse current: 90A
Power dissipation: 51W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; 51W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 27A
Max. forward impulse current: 90A
Power dissipation: 51W
Kind of package: tube
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| SCS206AJHRTLL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.63V
Max. load current: 26A
Max. forward impulse current: 90A
Power dissipation: 48W
Kind of package: reel; tape
Leakage current: 120µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.63V
Max. load current: 26A
Max. forward impulse current: 90A
Power dissipation: 48W
Kind of package: reel; tape
Leakage current: 120µA
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| SCS208AGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; 36W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 36A
Max. forward impulse current: 110A
Power dissipation: 36W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; 36W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 36A
Max. forward impulse current: 110A
Power dissipation: 36W
Kind of package: tube
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| SCS208AJTLL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.55V
Max. load current: 35A
Max. forward impulse current: 110A
Power dissipation: 62W
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.55V
Max. load current: 35A
Max. forward impulse current: 110A
Power dissipation: 62W
Kind of package: reel; tape
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| SCS208AMC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; 34W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.63V
Max. load current: 25A
Max. forward impulse current: 110A
Power dissipation: 34W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; 34W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.63V
Max. load current: 25A
Max. forward impulse current: 110A
Power dissipation: 34W
Kind of package: tube
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