Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102254) > Сторінка 1700 з 1705
| Фото | Назва | Виробник | Інформація |
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2SC5824T100R | ROHM SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89 Kind of package: reel; tape Power dissipation: 0.5W Polarisation: bipolar Mounting: SMD Case: SC62; SOT89 Frequency: 200MHz Collector-emitter voltage: 60V Current gain: 180...390 Collector current: 3A Type of transistor: NPN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| SML-020MYTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; green,yellow; SMD; 1210; 100°; 20mA; Lens: transparent LED colour: green; yellow Type of diode: LED LED lens: transparent LED current: 20mA Viewing angle: 100° Front: flat Mounting: SMD Case: 1210 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SML-020MVTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; red,green; SMD; 1210; 20mcd; 100°; 20mA; Lens: transparent LED colour: green; red Type of diode: LED LED lens: transparent Luminosity: 20mcd LED current: 20mA Viewing angle: 100° Front: flat Mounting: SMD Case: 1210 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| R6003KND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3A; Idm: 9A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3A Pulsed drain current: 9A Power dissipation: 44W Case: TO252 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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RXH125N03TB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.5A Pulsed drain current: 36A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 12.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| RRR040P03FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -16A; 1W; SOT346 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4A Pulsed drain current: -16A Power dissipation: 1W Case: SOT346 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Version: ESD |
товару немає в наявності |
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RRH140P03GZETB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -14A Pulsed drain current: -56A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
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RRH140P03TB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -14A Pulsed drain current: -56A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
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RB060L-40TE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: DO214AC; SMA Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.5V |
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RB068L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: DO214AC; SMA Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 50A Leakage current: 1µA Max. forward voltage: 0.69V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SMLVN6RGB1U1 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; RGB; SMD; 1411,PLCC6; 2.1/3.3/3.3VDC; 3.5x2.8x0.6mm; 20mA Type of light emitting diode: LED LED colour: RGB Mounting: SMD Case: 1411; PLCC6 Dimensions: 3.5x2.8x0.6mm LED current: 20mA Operating voltage: 2.1/3.3/3.3V DC Luminosity of red colour: 450...700mcd Luminosity of blue colour: 220...400mcd Wavelength: 465...475nm; 520...535nm; 619...629nm LED version: tricolour Front: flat Luminosity of green colour: 710...1200mcd |
на замовлення 842 шт: термін постачання 21-30 дні (днів) |
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| R6504END3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 12A; 58W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 58W Polarisation: unipolar Gate charge: 15nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 12A Drain-source voltage: 650V Drain current: 4A On-state resistance: 2.02Ω Type of transistor: N-MOSFET |
товару немає в наявності |
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| R6504KNJTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 12A; 58W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Power dissipation: 58W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 12A Drain-source voltage: 650V Drain current: 4A On-state resistance: 1.05Ω Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| BR25G320F-3GE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 20MHz; SOP8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: SPI Memory organisation: 4kx8bit Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.6...5.5V DC Access time: 5ms Clock frequency: 20MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| BR25G512F-3GE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 10MHz; SOP8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 512kb EEPROM Interface: SPI Memory organisation: 64kx8bit Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.8...5.5V DC Access time: 5ms Clock frequency: 10MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| BR25G512FJ-5AE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 20MHz; SOP8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 512kb EEPROM Interface: SPI Memory organisation: 64kx8bit Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.6...5.5V DC Access time: 3.5ms Clock frequency: 20MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| BR25H128F-2CE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 10MHz; SOP8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 128kb EEPROM Interface: SPI Memory organisation: 16kx8bit Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Supply voltage: 2.5...5.5V DC Access time: 4ms Clock frequency: 10MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| BR25H640F-2CE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 10MHz; SOP8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: SPI Memory organisation: 8kx8bit Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Supply voltage: 2.5...5.5V DC Access time: 4ms Clock frequency: 10MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| BR25S256F-WE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 20MHz; SOP8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...5.5V DC Access time: 5ms Clock frequency: 20MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| BH3547F-E2 | ROHM SEMICONDUCTOR |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 77mW; headphone driver; 4.5÷6.5VDC Type of integrated circuit: audio amplifier Output power: 77mW Integrated circuit features: headphone driver Mounting: SMD Supply voltage: 4.5...6.5V DC Number of channels: 2 Amplifier class: AB Case: SOP8 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| BD2051AFJ-E2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 500mA; Ch: 1; N-Channel; SMD; SOP-J8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOP-J8 On-state resistance: 0.1Ω Active logical level: high Operating temperature: -40...85°C Supply voltage: 2.7...5.5V Protection: over current OCP; overheating OTP; undervoltage UVP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| RGT16NL65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; TO263 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 8A Power dissipation: 47W Case: TO263 Gate-emitter voltage: ±30V Pulsed collector current: 24A Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Turn-on time: 27ns Turn-off time: 170ns Features of semiconductor devices: integrated anti-parallel diode |
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| RGT30NL65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 15A; 66W; TO263 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 66W Case: TO263 Gate-emitter voltage: ±30V Pulsed collector current: 45A Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Turn-on time: 40ns Turn-off time: 204ns Features of semiconductor devices: integrated anti-parallel diode |
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| RGT50NL65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; TO263 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: TO263 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode |
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| UMN1NTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 25mA Reverse recovery time: 4ns Semiconductor structure: common cathode; quadruple Case: SOT353 Max. forward voltage: 0.9V Max. load current: 80mA Max. forward impulse current: 0.25A Power dissipation: 0.15W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| BU7486FVM-TR | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier; Ch: 2; MSOP8; 3÷5.5VDC; reel,tape Kind of package: reel; tape Operating temperature: -40...85°C Slew rate: 10V/μs Input offset current: 1pA Input bias current: 1pA Voltage supply range: 3...5.5V DC Mounting: SMT Case: MSOP8 Type of integrated circuit: operational amplifier Number of channels: 2 Input offset voltage: 9.5mV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| BD5336G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Kind of RESET output: CMOS Active logical level: low Supply voltage: 950mV DC...10V DC Case: SSOP5 Operating temperature: -40...105°C Mounting: SMD Threshold on-voltage: 3.6V Kind of package: reel; tape Number of channels: 1 Integrated circuit features: ±1% accuracy Manufacturer series: BD53 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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IMX8T108 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 120V; 50mA; 300mW; SC74,SOT457 Case: SC74; SOT457 Mounting: SMD Collector-emitter voltage: 120V Current gain: 180...820 Collector current: 50mA Type of transistor: NPN x2 Power dissipation: 0.3W Polarisation: bipolar Kind of package: reel; tape Frequency: 140MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| DTC114YMT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.15W Current gain: 68 Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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RB561VM-40TE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky rectifying Case: SOD323F Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.56V Leakage current: 0.3mA Max. forward impulse current: 2A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| RF4E110GNTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 2W; DFN2020-8S Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11A Pulsed drain current: 44A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±20V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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DTA123JMT2L | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.15W Current gain: 80 Frequency: 250MHz |
на замовлення 980 шт: термін постачання 21-30 дні (днів) |
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| DTA123EETL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416 Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Case: SC75A; SOT416 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| DTA123JEFRATL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 80 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Case: SC75A; SOT416 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| DTA123JETL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 80 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Case: SC75A; SOT416 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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DTA123JKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 80 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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DTA123YKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 33 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| BD45445G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Operating temperature: -40...105°C Case: SSOP5 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: Counter Timer Built-in Kind of package: reel; tape Threshold on-voltage: 4.4V Manufacturer series: BD45 Kind of integrated circuit: voltage detector Mounting: SMD |
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В кошику од. на суму грн. | |||||||||
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BZX84C3V3LYT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 250mW; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 3.3V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| BD2245G-MGTR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SSOP6 Type of integrated circuit: power switch Case: SSOP6 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.8...5.5V On-state resistance: 0.13Ω Output current: 1.5A Number of channels: 1 Kind of output: N-Channel Active logical level: low Protection: over current OCP; overheating OTP; undervoltage UVP Kind of integrated circuit: high-side |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| BD7561SG-TR | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 1; SSOP5; reel,tape; Iio: 1pA Operating temperature: -40...105°C Case: SSOP5 Type of integrated circuit: operational amplifier Number of channels: 1 Bandwidth: 1MHz Input offset voltage: 10mV Kind of package: reel; tape Slew rate: 0.9V/μs Input offset current: 1pA Input bias current: 1pA Voltage supply range: ± 2.5...7.25V DC; 5...14.5V DC Mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| BD7561G-TR | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 1; SSOP5; reel,tape; Iio: 1pA Operating temperature: -40...85°C Case: SSOP5 Type of integrated circuit: operational amplifier Number of channels: 1 Bandwidth: 1MHz Input offset voltage: 10mV Kind of package: reel; tape Slew rate: 0.9V/μs Input offset current: 1pA Input bias current: 1pA Voltage supply range: ± 2.5...7.25V DC; 5...14.5V DC Mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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2SA2071P5T100Q | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 3A; 500mW; SC62,SOT89 Mounting: SMD Frequency: 180MHz Collector-emitter voltage: 60V Current gain: 120...270 Collector current: 3A Type of transistor: PNP Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Case: SC62; SOT89 |
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| 2SA2030T2L | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 12V; 0.5A; 150mW; SOT723 Mounting: SMD Frequency: 260MHz Collector-emitter voltage: 12V Current gain: 270...680 Collector current: 0.5A Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Case: SOT723 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| 2SA2094TLQ | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 2A; 500mW; SC96 Mounting: SMD Frequency: 300MHz Collector-emitter voltage: 60V Current gain: 120...270 Collector current: 2A Type of transistor: PNP Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Case: SC96 |
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|
|
RB706D-40FHT146 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SC59,SOT346; SMD; 40V; 30mA; reel,tape Semiconductor structure: double series Max. forward impulse current: 0.2A Leakage current: 1µA Max. off-state voltage: 40V Case: SC59; SOT346 Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.37V Mounting: SMD Load current: 30mA |
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| BA2902F-E2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier; 500kHz; Ch: 4; SOP14; reel,tape Type of integrated circuit: operational amplifier Case: SOP14 Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Number of channels: 4 Bandwidth: 500kHz Input offset voltage: 10mV Slew rate: 0.2V/μs Input offset current: 200nA Input bias current: 0.25µA Voltage supply range: ± 1.5...18V DC; 3...36V DC |
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| PDZVTR3.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode; 60uA Type of diode: Zener Power dissipation: 1W Zener voltage: 3.6V Kind of package: reel; tape Case: SOD128 Mounting: SMD Semiconductor structure: single diode Leakage current: 60µA |
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| PDZVTR3.9B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD128; single diode; 40uA Type of diode: Zener Power dissipation: 1W Zener voltage: 3.9V Kind of package: reel; tape Case: SOD128 Mounting: SMD Semiconductor structure: single diode Leakage current: 40µA |
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| PDZVTFTR3.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode; 60uA Type of diode: Zener Power dissipation: 1W Zener voltage: 3.6V Kind of package: reel; tape Case: SOD128 Mounting: SMD Semiconductor structure: single diode Leakage current: 60µA |
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| PDZVTFTR3.0B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 3V; SMD; reel,tape; SOD128; single diode; 100uA Type of diode: Zener Power dissipation: 1W Zener voltage: 3V Kind of package: reel; tape Case: SOD128 Mounting: SMD Semiconductor structure: single diode Leakage current: 0.1mA |
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|
|
SSTA06T116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT23 Mounting: SMD Collector-emitter voltage: 80V Current gain: 100 Collector current: 0.5A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Case: SOT23 Frequency: 100MHz |
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 |
UMD3NTR | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
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|
|
IMH23T110 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 20V; 0.6A; 300mW; SC74,SOT457 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 20V Collector current: 0.6A Power dissipation: 0.3W Case: SC74; SOT457 Current gain: 820...2700 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Base resistor: 4.7kΩ |
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| BU7271G-TR | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier; 90kHz; Ch: 1; SSOP5; 1.8÷5.5VDC; Iio: 1pA Operating temperature: -40...85°C Case: SSOP5 Type of integrated circuit: operational amplifier Number of channels: 1 Bandwidth: 90kHz Input offset voltage: 8mV Kind of package: reel; tape Slew rate: 50kV/μs Input offset current: 1pA Input bias current: 1pA Voltage supply range: 1.8...5.5V DC Mounting: SMT |
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| BU7271SG-TR | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier; 90kHz; Ch: 1; SSOP5; 1.8÷5.5VDC; Iio: 1pA Operating temperature: -40...105°C Case: SSOP5 Type of integrated circuit: operational amplifier Number of channels: 1 Bandwidth: 90kHz Input offset voltage: 8mV Kind of package: reel; tape Slew rate: 50kV/μs Input offset current: 1pA Input bias current: 1pA Voltage supply range: 1.8...5.5V DC Mounting: SMT |
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В кошику од. на суму грн. | |||||||||
| RCX160N20 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 16A Pulsed drain current: 64A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 410mΩ Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement |
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| SCS220AE2GC11 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 160W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.63V Max. load current: 91A Max. forward impulse current: 0.3kA Leakage current: 0.2mA Power dissipation: 160W Kind of package: tube |
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| BD4142HFV-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; 3÷5.5VDC Case: HVSOF5 Supply voltage: 3...5.5V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: high Kind of RESET output: open drain Kind of package: reel; tape Threshold on-voltage: 0.5V Manufacturer series: BD41 Kind of integrated circuit: voltage detector Mounting: SMD Operating temperature: -10...100°C |
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В кошику од. на суму грн. | |||||||||
| SH8M41GZETB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 80/-80V Drain current: 3.4/-2.6A Pulsed drain current: 10.4...13.6A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 160/310mΩ Mounting: SMD Gate charge: 6.6/8.2nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. |
| 2SC5824T100R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89
Kind of package: reel; tape
Power dissipation: 0.5W
Polarisation: bipolar
Mounting: SMD
Case: SC62; SOT89
Frequency: 200MHz
Collector-emitter voltage: 60V
Current gain: 180...390
Collector current: 3A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89
Kind of package: reel; tape
Power dissipation: 0.5W
Polarisation: bipolar
Mounting: SMD
Case: SC62; SOT89
Frequency: 200MHz
Collector-emitter voltage: 60V
Current gain: 180...390
Collector current: 3A
Type of transistor: NPN
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| SML-020MYTT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green,yellow; SMD; 1210; 100°; 20mA; Lens: transparent
LED colour: green; yellow
Type of diode: LED
LED lens: transparent
LED current: 20mA
Viewing angle: 100°
Front: flat
Mounting: SMD
Case: 1210
Category: SMD colour LEDs
Description: LED; green,yellow; SMD; 1210; 100°; 20mA; Lens: transparent
LED colour: green; yellow
Type of diode: LED
LED lens: transparent
LED current: 20mA
Viewing angle: 100°
Front: flat
Mounting: SMD
Case: 1210
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| SML-020MVTT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red,green; SMD; 1210; 20mcd; 100°; 20mA; Lens: transparent
LED colour: green; red
Type of diode: LED
LED lens: transparent
Luminosity: 20mcd
LED current: 20mA
Viewing angle: 100°
Front: flat
Mounting: SMD
Case: 1210
Category: SMD colour LEDs
Description: LED; red,green; SMD; 1210; 20mcd; 100°; 20mA; Lens: transparent
LED colour: green; red
Type of diode: LED
LED lens: transparent
Luminosity: 20mcd
LED current: 20mA
Viewing angle: 100°
Front: flat
Mounting: SMD
Case: 1210
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| R6003KND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3A; Idm: 9A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Pulsed drain current: 9A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3A; Idm: 9A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Pulsed drain current: 9A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RXH125N03TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RRR040P03FRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -16A; 1W; SOT346
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 1W
Case: SOT346
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -16A; 1W; SOT346
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 1W
Case: SOT346
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Version: ESD
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| RRH140P03GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -56A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -56A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| RRH140P03TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -56A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -56A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| RB060L-40TE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.5V
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| RB068L-40DDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 50A
Leakage current: 1µA
Max. forward voltage: 0.69V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 50A
Leakage current: 1µA
Max. forward voltage: 0.69V
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| SMLVN6RGB1U1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; RGB; SMD; 1411,PLCC6; 2.1/3.3/3.3VDC; 3.5x2.8x0.6mm; 20mA
Type of light emitting diode: LED
LED colour: RGB
Mounting: SMD
Case: 1411; PLCC6
Dimensions: 3.5x2.8x0.6mm
LED current: 20mA
Operating voltage: 2.1/3.3/3.3V DC
Luminosity of red colour: 450...700mcd
Luminosity of blue colour: 220...400mcd
Wavelength: 465...475nm; 520...535nm; 619...629nm
LED version: tricolour
Front: flat
Luminosity of green colour: 710...1200mcd
Category: SMD colour LEDs
Description: LED; RGB; SMD; 1411,PLCC6; 2.1/3.3/3.3VDC; 3.5x2.8x0.6mm; 20mA
Type of light emitting diode: LED
LED colour: RGB
Mounting: SMD
Case: 1411; PLCC6
Dimensions: 3.5x2.8x0.6mm
LED current: 20mA
Operating voltage: 2.1/3.3/3.3V DC
Luminosity of red colour: 450...700mcd
Luminosity of blue colour: 220...400mcd
Wavelength: 465...475nm; 520...535nm; 619...629nm
LED version: tricolour
Front: flat
Luminosity of green colour: 710...1200mcd
на замовлення 842 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 116.91 грн |
| 10+ | 69.26 грн |
| 23+ | 39.37 грн |
| 63+ | 37.23 грн |
| R6504END3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 12A; 58W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 58W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 12A
Drain-source voltage: 650V
Drain current: 4A
On-state resistance: 2.02Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 12A; 58W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 58W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 12A
Drain-source voltage: 650V
Drain current: 4A
On-state resistance: 2.02Ω
Type of transistor: N-MOSFET
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| R6504KNJTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 12A; 58W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Power dissipation: 58W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 12A
Drain-source voltage: 650V
Drain current: 4A
On-state resistance: 1.05Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 12A; 58W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Power dissipation: 58W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 12A
Drain-source voltage: 650V
Drain current: 4A
On-state resistance: 1.05Ω
Type of transistor: N-MOSFET
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| BR25G320F-3GE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 20MHz; SOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: SPI
Memory organisation: 4kx8bit
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.6...5.5V DC
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 20MHz; SOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: SPI
Memory organisation: 4kx8bit
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.6...5.5V DC
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
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| BR25G512F-3GE2 |
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 10MHz; SOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Access time: 5ms
Clock frequency: 10MHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 10MHz; SOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Access time: 5ms
Clock frequency: 10MHz
Kind of package: reel; tape
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| BR25G512FJ-5AE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 20MHz; SOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.6...5.5V DC
Access time: 3.5ms
Clock frequency: 20MHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 20MHz; SOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.6...5.5V DC
Access time: 3.5ms
Clock frequency: 20MHz
Kind of package: reel; tape
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| BR25H128F-2CE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 10MHz; SOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: SPI
Memory organisation: 16kx8bit
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.5...5.5V DC
Access time: 4ms
Clock frequency: 10MHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 10MHz; SOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: SPI
Memory organisation: 16kx8bit
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.5...5.5V DC
Access time: 4ms
Clock frequency: 10MHz
Kind of package: reel; tape
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| BR25H640F-2CE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 10MHz; SOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.5...5.5V DC
Access time: 4ms
Clock frequency: 10MHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 10MHz; SOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.5...5.5V DC
Access time: 4ms
Clock frequency: 10MHz
Kind of package: reel; tape
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| BR25S256F-WE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 20MHz; SOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...5.5V DC
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 20MHz; SOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...5.5V DC
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
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| BH3547F-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 77mW; headphone driver; 4.5÷6.5VDC
Type of integrated circuit: audio amplifier
Output power: 77mW
Integrated circuit features: headphone driver
Mounting: SMD
Supply voltage: 4.5...6.5V DC
Number of channels: 2
Amplifier class: AB
Case: SOP8
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 77mW; headphone driver; 4.5÷6.5VDC
Type of integrated circuit: audio amplifier
Output power: 77mW
Integrated circuit features: headphone driver
Mounting: SMD
Supply voltage: 4.5...6.5V DC
Number of channels: 2
Amplifier class: AB
Case: SOP8
Kind of package: reel; tape
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| BD2051AFJ-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 500mA; Ch: 1; N-Channel; SMD; SOP-J8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOP-J8
On-state resistance: 0.1Ω
Active logical level: high
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 500mA; Ch: 1; N-Channel; SMD; SOP-J8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOP-J8
On-state resistance: 0.1Ω
Active logical level: high
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
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| RGT16NL65DGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 8A
Power dissipation: 47W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Turn-on time: 27ns
Turn-off time: 170ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 8A
Power dissipation: 47W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Turn-on time: 27ns
Turn-off time: 170ns
Features of semiconductor devices: integrated anti-parallel diode
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| RGT30NL65DGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 66W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 66W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Turn-on time: 40ns
Turn-off time: 204ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 66W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 66W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Turn-on time: 40ns
Turn-off time: 204ns
Features of semiconductor devices: integrated anti-parallel diode
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| RGT50NL65DGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
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| UMN1NTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 25mA
Reverse recovery time: 4ns
Semiconductor structure: common cathode; quadruple
Case: SOT353
Max. forward voltage: 0.9V
Max. load current: 80mA
Max. forward impulse current: 0.25A
Power dissipation: 0.15W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 25mA
Reverse recovery time: 4ns
Semiconductor structure: common cathode; quadruple
Case: SOT353
Max. forward voltage: 0.9V
Max. load current: 80mA
Max. forward impulse current: 0.25A
Power dissipation: 0.15W
Kind of package: reel; tape
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| BU7486FVM-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; MSOP8; 3÷5.5VDC; reel,tape
Kind of package: reel; tape
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset current: 1pA
Input bias current: 1pA
Voltage supply range: 3...5.5V DC
Mounting: SMT
Case: MSOP8
Type of integrated circuit: operational amplifier
Number of channels: 2
Input offset voltage: 9.5mV
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; MSOP8; 3÷5.5VDC; reel,tape
Kind of package: reel; tape
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset current: 1pA
Input bias current: 1pA
Voltage supply range: 3...5.5V DC
Mounting: SMT
Case: MSOP8
Type of integrated circuit: operational amplifier
Number of channels: 2
Input offset voltage: 9.5mV
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| BD5336G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 3.6V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD53
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 3.6V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD53
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| IMX8T108 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 120V; 50mA; 300mW; SC74,SOT457
Case: SC74; SOT457
Mounting: SMD
Collector-emitter voltage: 120V
Current gain: 180...820
Collector current: 50mA
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 140MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 120V; 50mA; 300mW; SC74,SOT457
Case: SC74; SOT457
Mounting: SMD
Collector-emitter voltage: 120V
Current gain: 180...820
Collector current: 50mA
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 140MHz
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| DTC114YMT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.15W
Current gain: 68
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.15W
Current gain: 68
Frequency: 250MHz
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| RB561VM-40TE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Leakage current: 0.3mA
Max. forward impulse current: 2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Leakage current: 0.3mA
Max. forward impulse current: 2A
Kind of package: reel; tape
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| RF4E110GNTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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| DTA123JMT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.15W
Current gain: 80
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.15W
Current gain: 80
Frequency: 250MHz
на замовлення 980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.23 грн |
| 81+ | 4.74 грн |
| 111+ | 3.46 грн |
| 424+ | 2.10 грн |
| DTA123EETL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SC75A; SOT416
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SC75A; SOT416
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| DTA123JEFRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SC75A; SOT416
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SC75A; SOT416
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| DTA123JETL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SC75A; SOT416
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SC75A; SOT416
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| DTA123JKAT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SC59; SOT346
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SC59; SOT346
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| DTA123YKAT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Case: SC59; SOT346
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Case: SC59; SOT346
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| BD45445G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: Counter Timer Built-in
Kind of package: reel; tape
Threshold on-voltage: 4.4V
Manufacturer series: BD45
Kind of integrated circuit: voltage detector
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: Counter Timer Built-in
Kind of package: reel; tape
Threshold on-voltage: 4.4V
Manufacturer series: BD45
Kind of integrated circuit: voltage detector
Mounting: SMD
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| BZX84C3V3LYT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
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| BD2245G-MGTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SSOP6
Type of integrated circuit: power switch
Case: SSOP6
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.8...5.5V
On-state resistance: 0.13Ω
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Active logical level: low
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SSOP6
Type of integrated circuit: power switch
Case: SSOP6
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.8...5.5V
On-state resistance: 0.13Ω
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Active logical level: low
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
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| BD7561SG-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; SSOP5; reel,tape; Iio: 1pA
Operating temperature: -40...105°C
Case: SSOP5
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 1MHz
Input offset voltage: 10mV
Kind of package: reel; tape
Slew rate: 0.9V/μs
Input offset current: 1pA
Input bias current: 1pA
Voltage supply range: ± 2.5...7.25V DC; 5...14.5V DC
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; SSOP5; reel,tape; Iio: 1pA
Operating temperature: -40...105°C
Case: SSOP5
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 1MHz
Input offset voltage: 10mV
Kind of package: reel; tape
Slew rate: 0.9V/μs
Input offset current: 1pA
Input bias current: 1pA
Voltage supply range: ± 2.5...7.25V DC; 5...14.5V DC
Mounting: SMT
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| BD7561G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; SSOP5; reel,tape; Iio: 1pA
Operating temperature: -40...85°C
Case: SSOP5
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 1MHz
Input offset voltage: 10mV
Kind of package: reel; tape
Slew rate: 0.9V/μs
Input offset current: 1pA
Input bias current: 1pA
Voltage supply range: ± 2.5...7.25V DC; 5...14.5V DC
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; SSOP5; reel,tape; Iio: 1pA
Operating temperature: -40...85°C
Case: SSOP5
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 1MHz
Input offset voltage: 10mV
Kind of package: reel; tape
Slew rate: 0.9V/μs
Input offset current: 1pA
Input bias current: 1pA
Voltage supply range: ± 2.5...7.25V DC; 5...14.5V DC
Mounting: SMT
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| 2SA2071P5T100Q |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 500mW; SC62,SOT89
Mounting: SMD
Frequency: 180MHz
Collector-emitter voltage: 60V
Current gain: 120...270
Collector current: 3A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 500mW; SC62,SOT89
Mounting: SMD
Frequency: 180MHz
Collector-emitter voltage: 60V
Current gain: 120...270
Collector current: 3A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
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| 2SA2030T2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 0.5A; 150mW; SOT723
Mounting: SMD
Frequency: 260MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT723
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 0.5A; 150mW; SOT723
Mounting: SMD
Frequency: 260MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT723
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| 2SA2094TLQ |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 500mW; SC96
Mounting: SMD
Frequency: 300MHz
Collector-emitter voltage: 60V
Current gain: 120...270
Collector current: 2A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC96
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 500mW; SC96
Mounting: SMD
Frequency: 300MHz
Collector-emitter voltage: 60V
Current gain: 120...270
Collector current: 2A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC96
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| RB706D-40FHT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC59,SOT346; SMD; 40V; 30mA; reel,tape
Semiconductor structure: double series
Max. forward impulse current: 0.2A
Leakage current: 1µA
Max. off-state voltage: 40V
Case: SC59; SOT346
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.37V
Mounting: SMD
Load current: 30mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC59,SOT346; SMD; 40V; 30mA; reel,tape
Semiconductor structure: double series
Max. forward impulse current: 0.2A
Leakage current: 1µA
Max. off-state voltage: 40V
Case: SC59; SOT346
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.37V
Mounting: SMD
Load current: 30mA
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| BA2902F-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 500kHz; Ch: 4; SOP14; reel,tape
Type of integrated circuit: operational amplifier
Case: SOP14
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 4
Bandwidth: 500kHz
Input offset voltage: 10mV
Slew rate: 0.2V/μs
Input offset current: 200nA
Input bias current: 0.25µA
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 500kHz; Ch: 4; SOP14; reel,tape
Type of integrated circuit: operational amplifier
Case: SOP14
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 4
Bandwidth: 500kHz
Input offset voltage: 10mV
Slew rate: 0.2V/μs
Input offset current: 200nA
Input bias current: 0.25µA
Voltage supply range: ± 1.5...18V DC; 3...36V DC
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| PDZVTR3.6B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode; 60uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 60µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode; 60uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 60µA
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| PDZVTR3.9B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD128; single diode; 40uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 40µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD128; single diode; 40uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 40µA
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| PDZVTFTR3.6B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode; 60uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 60µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode; 60uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 60µA
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| PDZVTFTR3.0B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3V; SMD; reel,tape; SOD128; single diode; 100uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.1mA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3V; SMD; reel,tape; SOD128; single diode; 100uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.1mA
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| SSTA06T116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT23
Mounting: SMD
Collector-emitter voltage: 80V
Current gain: 100
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT23
Mounting: SMD
Collector-emitter voltage: 80V
Current gain: 100
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23
Frequency: 100MHz
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| UMD3NTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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| IMH23T110 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 20V; 0.6A; 300mW; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 20V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 820...2700
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Base resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 20V; 0.6A; 300mW; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 20V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 820...2700
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Base resistor: 4.7kΩ
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| BU7271G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 90kHz; Ch: 1; SSOP5; 1.8÷5.5VDC; Iio: 1pA
Operating temperature: -40...85°C
Case: SSOP5
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 90kHz
Input offset voltage: 8mV
Kind of package: reel; tape
Slew rate: 50kV/μs
Input offset current: 1pA
Input bias current: 1pA
Voltage supply range: 1.8...5.5V DC
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: operational amplifier; 90kHz; Ch: 1; SSOP5; 1.8÷5.5VDC; Iio: 1pA
Operating temperature: -40...85°C
Case: SSOP5
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 90kHz
Input offset voltage: 8mV
Kind of package: reel; tape
Slew rate: 50kV/μs
Input offset current: 1pA
Input bias current: 1pA
Voltage supply range: 1.8...5.5V DC
Mounting: SMT
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| BU7271SG-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 90kHz; Ch: 1; SSOP5; 1.8÷5.5VDC; Iio: 1pA
Operating temperature: -40...105°C
Case: SSOP5
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 90kHz
Input offset voltage: 8mV
Kind of package: reel; tape
Slew rate: 50kV/μs
Input offset current: 1pA
Input bias current: 1pA
Voltage supply range: 1.8...5.5V DC
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: operational amplifier; 90kHz; Ch: 1; SSOP5; 1.8÷5.5VDC; Iio: 1pA
Operating temperature: -40...105°C
Case: SSOP5
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 90kHz
Input offset voltage: 8mV
Kind of package: reel; tape
Slew rate: 50kV/μs
Input offset current: 1pA
Input bias current: 1pA
Voltage supply range: 1.8...5.5V DC
Mounting: SMT
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| RCX160N20 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
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| SCS220AE2GC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 160W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.63V
Max. load current: 91A
Max. forward impulse current: 0.3kA
Leakage current: 0.2mA
Power dissipation: 160W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 160W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.63V
Max. load current: 91A
Max. forward impulse current: 0.3kA
Leakage current: 0.2mA
Power dissipation: 160W
Kind of package: tube
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| BD4142HFV-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; 3÷5.5VDC
Case: HVSOF5
Supply voltage: 3...5.5V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: high
Kind of RESET output: open drain
Kind of package: reel; tape
Threshold on-voltage: 0.5V
Manufacturer series: BD41
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -10...100°C
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; 3÷5.5VDC
Case: HVSOF5
Supply voltage: 3...5.5V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: high
Kind of RESET output: open drain
Kind of package: reel; tape
Threshold on-voltage: 0.5V
Manufacturer series: BD41
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -10...100°C
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| SH8M41GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 80/-80V
Drain current: 3.4/-2.6A
Pulsed drain current: 10.4...13.6A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 160/310mΩ
Mounting: SMD
Gate charge: 6.6/8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 80/-80V
Drain current: 3.4/-2.6A
Pulsed drain current: 10.4...13.6A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 160/310mΩ
Mounting: SMD
Gate charge: 6.6/8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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