Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102536) > Сторінка 1703 з 1709
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| R6024KNZ4C13 | ROHM SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 72A; 245W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 72A Power dissipation: 245W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
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| BD4942G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Kind of RESET output: CMOS Active logical level: low Supply voltage: 950mV DC...10V DC Case: SSOP5 Operating temperature: -40...105°C Mounting: SMD Threshold on-voltage: 4.2V Kind of package: reel; tape Number of channels: 1 Integrated circuit features: ±1% accuracy Manufacturer series: BD49 |
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| BD22621G-MTR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SSOP5 Output current: 0.2A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Active logical level: high Kind of integrated circuit: high-side Protection: over current OCP; overheating OTP; undervoltage UVP Mounting: SMD Operating temperature: -40...105°C Case: SSOP5 Supply voltage: 2.7...5.5V On-state resistance: 0.27Ω |
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UDZVTE-1711B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 11V; SMD; reel,tape; SC90A,SOD323F; 100nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 11V Kind of package: reel; tape Case: SC90A; SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 450 шт: термін постачання 21-30 дні (днів) |
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| CDZVT2R11B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 100mW; 11V; SMD; reel,tape; SOD923; single diode Type of diode: Zener Power dissipation: 0.1W Zener voltage: 11V Kind of package: reel; tape Case: SOD923 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
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| EDZVT2R11B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 11V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 11V Kind of package: reel; tape Case: SC79; SOD523 Mounting: SMD Semiconductor structure: single diode Leakage current: 0.1µA |
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KDZVTR11B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 11V; SMD; reel,tape; SOD123F; single diode; 10uA Type of diode: Zener Power dissipation: 1W Zener voltage: 11V Kind of package: reel; tape Case: SOD123F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 10µA |
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| UDZVFHTE-1711B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 11V; SMD; reel,tape; SC90A,SOD323F; 100nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 11V Kind of package: reel; tape Case: SC90A; SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
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| UFZVFHTE-1711B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 11V; SMD; reel,tape; SC90A,SOD323F; 200nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Kind of package: reel; tape Case: SC90A; SOD323F Mounting: SMD Semiconductor structure: single diode Leakage current: 0.2µA |
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2SCR573D3TL1 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 3A; 10W; DPAK,TO252 Mounting: SMD Collector-emitter voltage: 50V Current gain: 180...450 Collector current: 3A Type of transistor: NPN Power dissipation: 10W Polarisation: bipolar Kind of package: reel; tape Case: DPAK; TO252 Frequency: 320MHz |
на замовлення 1837 шт: термін постачання 21-30 дні (днів) |
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| 2SAR573D3TL1 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 3A; 10W; DPAK,TO252 Frequency: 300MHz Collector-emitter voltage: 50V Current gain: 180...450 Collector current: 3A Type of transistor: PNP Power dissipation: 10W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: DPAK; TO252 |
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| 2SAR573D3FRATL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 3A; 10W; DPAK,TO252 Frequency: 300MHz Collector-emitter voltage: 50V Current gain: 180...450 Collector current: 3A Type of transistor: PNP Power dissipation: 10W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: DPAK; TO252 |
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| BD2242G-GTR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SSOP6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SSOP6 On-state resistance: 0.12Ω Active logical level: high Operating temperature: -40...85°C Supply voltage: 2.8...5.5V Protection: over current OCP; overheating OTP; undervoltage UVP Output current: 1.5A |
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| BD2244G-MGTR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SSOP6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SSOP6 On-state resistance: 0.13Ω Active logical level: high Operating temperature: -40...85°C Supply voltage: 2.8...5.5V Protection: over current OCP; overheating OTP; undervoltage UVP Output current: 1.5A |
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| BD2247G-GTR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; SSOP5; -40÷85°C Type of integrated circuit: power switch Kind of integrated circuit: high-side Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SSOP5 On-state resistance: 0.18Ω Active logical level: low Operating temperature: -40...85°C Supply voltage: 2.7...5.5V Protection: over current OCP; overheating OTP; undervoltage UVP |
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| BD2243G-GTR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SSOP6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SSOP6 On-state resistance: 0.12Ω Active logical level: low Operating temperature: -40...85°C Supply voltage: 2.8...5.5V Protection: over current OCP; overheating OTP; undervoltage UVP Output current: 1.5A |
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| BD00C0AWFP-E2 | ROHM SEMICONDUCTOR |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 3÷15V; 1A; TO252-5 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.5V Output voltage: 3...15V Output current: 1A Case: TO252-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...105°C Tolerance: ±1% Number of channels: 1 Input voltage: 4...26.5V |
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| BA50BC0WFP-E2 | ROHM SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; TO252-5; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 5V Output current: 1A Case: TO252-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...105°C Tolerance: ±2% Number of channels: 1 Input voltage: 3...16V |
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| SCT3080ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247 Case: TO247 Mounting: THT Kind of package: tube Drain-source voltage: 650V Drain current: 30A On-state resistance: 0.104Ω Type of transistor: N-MOSFET Power dissipation: 134W Polarisation: unipolar Gate charge: 48nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Pulsed drain current: 75A |
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| SCT3080ARC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W Case: TO247-4 Mounting: THT Kind of package: tube Drain-source voltage: 650V Drain current: 30A On-state resistance: 0.104Ω Type of transistor: N-MOSFET Power dissipation: 134W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 48nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Pulsed drain current: 75A |
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| EDZVT2R30B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 30V; SMD; reel,tape; SC79,SOD523; single diode Mounting: SMD Leakage current: 0.1µA Power dissipation: 0.15W Kind of package: reel; tape Type of diode: Zener Case: SC79; SOD523 Zener voltage: 30V Semiconductor structure: single diode |
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| EDZVFHT2R30B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 30V; SMD; reel,tape; SC79,SOD523; single diode Mounting: SMD Leakage current: 0.1µA Power dissipation: 0.15W Kind of package: reel; tape Type of diode: Zener Case: SC79; SOD523 Zener voltage: 30V Semiconductor structure: single diode |
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DTB123YKT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Current gain: 56 Collector current: 0.5A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Mounting: SMD Case: SC59; SOT346 Frequency: 200MHz Collector-emitter voltage: 50V |
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| SCT3160KW7TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; Idm: 42A; 100W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 17A Pulsed drain current: 42A Power dissipation: 100W Case: TO263-7 Gate-source voltage: -4...22V On-state resistance: 208mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhancement |
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RRR030P03HZGTL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1W; SOT346; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3A Pulsed drain current: -12A Power dissipation: 1W Case: SOT346 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 2991 шт: термін постачання 21-30 дні (днів) |
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RRQ030P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3A Pulsed drain current: -12A Power dissipation: 1.25W Case: SOT457 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Version: ESD |
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| RRR030P03FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1W; SOT346 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3A Pulsed drain current: -12A Power dissipation: 1W Case: SOT346 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Version: ESD |
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| RF4C050APTR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -20A; 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 55nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -20A Mounting: SMD Case: DFN2020-8S Drain-source voltage: -20V Drain current: -10A On-state resistance: 26mΩ Type of transistor: P-MOSFET Power dissipation: 2W |
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| RF4C100BCTCR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -36A; 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 23.5nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -36A Mounting: SMD Case: DFN2020-8S Drain-source voltage: -20V Drain current: -10A On-state resistance: 15.6mΩ Type of transistor: P-MOSFET Power dissipation: 2W |
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| RSJ550N10TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 110A; 100W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 55A Power dissipation: 100W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 18.9mΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 110A |
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RBS1MM40ATR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.38V Leakage current: 0.4mA Max. forward impulse current: 25A Kind of package: reel; tape |
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| RBS1LAM40ATR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD128; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD128 Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.38V Leakage current: 0.4mA Max. forward impulse current: 40A Kind of package: reel; tape |
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| RBS2LAM40CTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD128; SMD; 20V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD128 Mounting: SMD Max. off-state voltage: 20V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.37V Leakage current: 0.8mA Max. forward impulse current: 80A Kind of package: reel; tape |
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| RBS3LAM40BTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD128; SMD; 20V; 3A; reel,tape Type of diode: Schottky rectifying Case: SOD128 Mounting: SMD Max. off-state voltage: 20V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.45V Leakage current: 0.6mA Max. forward impulse current: 60A Kind of package: reel; tape |
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| BV2HC045EFU-CE2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; Ch: 2; SMD; -40÷150°C; 6÷19V Type of integrated circuit: power switch Number of channels: 2 Mounting: SMD Supply voltage: 6...19V Operating temperature: -40...150°C On-state resistance: 0.1Ω Protection: over current OCP; overheating OTP; undervoltage UVP Kind of integrated circuit: high-side |
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| SCS312AJTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 12A; reel,tape Mounting: SMD Max. off-state voltage: 650V Max. load current: 55A Max. forward voltage: 1.71V Load current: 12A Semiconductor structure: single diode Max. forward impulse current: 350A Leakage current: 240µA Power dissipation: 88W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Case: TO263AB |
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В кошику од. на суму грн. | |||||||||||||||||
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RF01VM2STE-17 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V Kind of package: reel; tape Load current: 0.1A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 1A Type of diode: rectifying Mounting: SMD Case: SC90A; SOD323F Max. off-state voltage: 250V Max. load current: 0.3A Max. forward voltage: 1.2V |
на замовлення 2235 шт: термін постачання 21-30 дні (днів) |
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RF081MM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.8A; 25ns; SOD123F; Ufmax: 0.98V Mounting: SMD Max. off-state voltage: 200V Max. forward voltage: 0.98V Load current: 0.8A Semiconductor structure: single diode Reverse recovery time: 25ns Max. forward impulse current: 20A Kind of package: reel; tape Type of diode: rectifying Case: SOD123F |
на замовлення 1627 шт: термін постачання 21-30 дні (днів) |
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RFN1LAM6STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SOD128; Ufmax: 1.45V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 0.8A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 1.45V Max. forward impulse current: 15A Kind of package: reel; tape |
на замовлення 2670 шт: термін постачання 21-30 дні (днів) |
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| SML-D13WWT86A | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; yellow; SMD; 112mcd; 20mA; 587nm; Lens: white; Front: flat Type of diode: LED LED colour: yellow Mounting: SMD Luminosity: 112mcd LED current: 20mA Wavelength: 587nm LED lens: white Front: flat |
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| SML-D13WWT86C | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; yellow; SMD; 110mcd; 160°; 20mA; 587nm; Lens: white,diffused Type of diode: LED LED colour: yellow Mounting: SMD Luminosity: 110mcd Viewing angle: 160° LED current: 20mA Wavelength: 587nm LED lens: diffused; white Front: flat |
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| SML-D12Y3WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; yellow; SMD; 40mcd; 20mA; 581nm; Lens: white; Front: flat Type of diode: LED LED colour: yellow Mounting: SMD Luminosity: 40mcd LED current: 20mA Wavelength: 581nm LED lens: white Front: flat |
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В кошику од. на суму грн. | |||||||||||||||||
| RSJ650N10TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 65A Pulsed drain current: 130A Power dissipation: 100W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 260nC Kind of package: reel; tape Kind of channel: enhancement |
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| RB400VAM-50TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.55V Max. forward impulse current: 3A Leakage current: 50µA |
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RB400DT146 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SC59,SOT346; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky rectifying Case: SC59; SOT346 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.55V Max. forward impulse current: 3A Leakage current: 50µA |
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| RB400VYM-50FHTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.55V Max. forward impulse current: 3A Leakage current: 50µA |
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| BD5240G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Mounting: SMD Manufacturer series: BD52 Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 4V Kind of integrated circuit: voltage detector Case: SSOP5 |
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| SCT3030ALHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W On-state resistance: 39mΩ Drain current: 70A Power dissipation: 262W Polarisation: unipolar Kind of package: tube Drain-source voltage: 650V Case: TO247 Gate charge: 104nC Mounting: THT Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Type of transistor: N-MOSFET Pulsed drain current: 175A |
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| SCT3030ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W On-state resistance: 39mΩ Drain current: 70A Power dissipation: 262W Polarisation: unipolar Kind of package: tube Drain-source voltage: 650V Case: TO247 Gate charge: 104nC Mounting: THT Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Type of transistor: N-MOSFET Pulsed drain current: 175A |
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| SCT3030ARC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W On-state resistance: 39mΩ Drain current: 70A Power dissipation: 262W Polarisation: unipolar Kind of package: tube Drain-source voltage: 650V Case: TO247-4 Features of semiconductor devices: Kelvin terminal Gate charge: 104nC Mounting: THT Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Type of transistor: N-MOSFET Pulsed drain current: 175A |
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| SCT3030AW7TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W On-state resistance: 39mΩ Drain current: 70A Power dissipation: 267W Polarisation: unipolar Kind of package: reel; tape Drain-source voltage: 650V Case: TO263-7 Gate charge: 104nC Mounting: SMD Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Type of transistor: N-MOSFET Pulsed drain current: 175A |
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| SCT3030KLGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W On-state resistance: 39mΩ Drain current: 72A Power dissipation: 339W Polarisation: unipolar Kind of package: tube Drain-source voltage: 1.2kV Case: TO247 Gate charge: 131nC Mounting: THT Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Type of transistor: N-MOSFET Pulsed drain current: 180A |
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| SCT3030KLHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W On-state resistance: 39mΩ Drain current: 72A Power dissipation: 339W Polarisation: unipolar Kind of package: tube Drain-source voltage: 1.2kV Case: TO247 Gate charge: 131nC Mounting: THT Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Type of transistor: N-MOSFET Pulsed drain current: 180A |
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| RB055LAM-40TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 3A; reel,tape Case: SOD128 Max. off-state voltage: 40V Max. forward voltage: 0.62V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 70A Leakage current: 0.1mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
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| RB055LAM-30TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 3A; reel,tape Case: SOD128 Max. off-state voltage: 30V Max. forward voltage: 0.55V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 55A Leakage current: 50µA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
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| RB055LAM-30TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 3A; reel,tape Case: SOD128 Max. off-state voltage: 30V Max. forward voltage: 0.55V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 55A Leakage current: 50µA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
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В кошику од. на суму грн. | |||||||||||||||||
| RB055LAM-60TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD128; SMD; 60V; 3A; reel,tape Case: SOD128 Max. off-state voltage: 60V Max. forward voltage: 0.68V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 50A Leakage current: 70µA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
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В кошику од. на суму грн. | |||||||||||||||||
| RGT50NS65DGC9 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; TO262 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: TO262 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 49nC Kind of package: tube Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode |
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| RGT50TM65DGC9 | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 13A Power dissipation: 23W Case: TO220NFM Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: SMD Gate charge: 49nC Kind of package: tube Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode |
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| RGT50NS65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; LPDS Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: LPDS Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode |
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| R6024KNZ4C13 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 72A; 245W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 245W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 72A; 245W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 245W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
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| BD4942G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.2V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD49
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.2V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD49
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| BD22621G-MTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SSOP5
Output current: 0.2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Kind of integrated circuit: high-side
Protection: over current OCP; overheating OTP; undervoltage UVP
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 2.7...5.5V
On-state resistance: 0.27Ω
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SSOP5
Output current: 0.2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Kind of integrated circuit: high-side
Protection: over current OCP; overheating OTP; undervoltage UVP
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 2.7...5.5V
On-state resistance: 0.27Ω
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| UDZVTE-1711B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 11V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 11V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 450 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 9.77 грн |
| 54+ | 7.03 грн |
| 68+ | 5.62 грн |
| 100+ | 3.86 грн |
| CDZVT2R11B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 11V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 11V
Kind of package: reel; tape
Case: SOD923
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 11V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 11V
Kind of package: reel; tape
Case: SOD923
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
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| EDZVT2R11B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 11V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 11V
Kind of package: reel; tape
Case: SC79; SOD523
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 11V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 11V
Kind of package: reel; tape
Case: SC79; SOD523
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.1µA
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| KDZVTR11B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 11V; SMD; reel,tape; SOD123F; single diode; 10uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 10µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 11V; SMD; reel,tape; SOD123F; single diode; 10uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 10µA
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| UDZVFHTE-1711B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 11V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 11V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
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| UFZVFHTE-1711B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 11V; SMD; reel,tape; SC90A,SOD323F; 200nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.2µA
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 11V; SMD; reel,tape; SC90A,SOD323F; 200nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.2µA
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| 2SCR573D3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 10W; DPAK,TO252
Mounting: SMD
Collector-emitter voltage: 50V
Current gain: 180...450
Collector current: 3A
Type of transistor: NPN
Power dissipation: 10W
Polarisation: bipolar
Kind of package: reel; tape
Case: DPAK; TO252
Frequency: 320MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 10W; DPAK,TO252
Mounting: SMD
Collector-emitter voltage: 50V
Current gain: 180...450
Collector current: 3A
Type of transistor: NPN
Power dissipation: 10W
Polarisation: bipolar
Kind of package: reel; tape
Case: DPAK; TO252
Frequency: 320MHz
на замовлення 1837 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 65.12 грн |
| 10+ | 50.49 грн |
| 50+ | 17.76 грн |
| 137+ | 16.78 грн |
| 2SAR573D3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 10W; DPAK,TO252
Frequency: 300MHz
Collector-emitter voltage: 50V
Current gain: 180...450
Collector current: 3A
Type of transistor: PNP
Power dissipation: 10W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: DPAK; TO252
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 10W; DPAK,TO252
Frequency: 300MHz
Collector-emitter voltage: 50V
Current gain: 180...450
Collector current: 3A
Type of transistor: PNP
Power dissipation: 10W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: DPAK; TO252
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| 2SAR573D3FRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 10W; DPAK,TO252
Frequency: 300MHz
Collector-emitter voltage: 50V
Current gain: 180...450
Collector current: 3A
Type of transistor: PNP
Power dissipation: 10W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: DPAK; TO252
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 10W; DPAK,TO252
Frequency: 300MHz
Collector-emitter voltage: 50V
Current gain: 180...450
Collector current: 3A
Type of transistor: PNP
Power dissipation: 10W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: DPAK; TO252
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| BD2242G-GTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SSOP6
On-state resistance: 0.12Ω
Active logical level: high
Operating temperature: -40...85°C
Supply voltage: 2.8...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Output current: 1.5A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SSOP6
On-state resistance: 0.12Ω
Active logical level: high
Operating temperature: -40...85°C
Supply voltage: 2.8...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Output current: 1.5A
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| BD2244G-MGTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SSOP6
On-state resistance: 0.13Ω
Active logical level: high
Operating temperature: -40...85°C
Supply voltage: 2.8...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Output current: 1.5A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SSOP6
On-state resistance: 0.13Ω
Active logical level: high
Operating temperature: -40...85°C
Supply voltage: 2.8...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Output current: 1.5A
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| BD2247G-GTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; SSOP5; -40÷85°C
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SSOP5
On-state resistance: 0.18Ω
Active logical level: low
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; SSOP5; -40÷85°C
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SSOP5
On-state resistance: 0.18Ω
Active logical level: low
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
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| BD2243G-GTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SSOP6
On-state resistance: 0.12Ω
Active logical level: low
Operating temperature: -40...85°C
Supply voltage: 2.8...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Output current: 1.5A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SSOP6
On-state resistance: 0.12Ω
Active logical level: low
Operating temperature: -40...85°C
Supply voltage: 2.8...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Output current: 1.5A
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| BD00C0AWFP-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 3÷15V; 1A; TO252-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.5V
Output voltage: 3...15V
Output current: 1A
Case: TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4...26.5V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 3÷15V; 1A; TO252-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.5V
Output voltage: 3...15V
Output current: 1A
Case: TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4...26.5V
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| BA50BC0WFP-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; TO252-5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 1A
Case: TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; TO252-5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 1A
Case: TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
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| SCT3080ALGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247
Case: TO247
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 30A
On-state resistance: 0.104Ω
Type of transistor: N-MOSFET
Power dissipation: 134W
Polarisation: unipolar
Gate charge: 48nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Pulsed drain current: 75A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247
Case: TO247
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 30A
On-state resistance: 0.104Ω
Type of transistor: N-MOSFET
Power dissipation: 134W
Polarisation: unipolar
Gate charge: 48nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Pulsed drain current: 75A
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| SCT3080ARC14 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W
Case: TO247-4
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 30A
On-state resistance: 0.104Ω
Type of transistor: N-MOSFET
Power dissipation: 134W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 48nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Pulsed drain current: 75A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W
Case: TO247-4
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 30A
On-state resistance: 0.104Ω
Type of transistor: N-MOSFET
Power dissipation: 134W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 48nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Pulsed drain current: 75A
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| EDZVT2R30B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 30V; SMD; reel,tape; SC79,SOD523; single diode
Mounting: SMD
Leakage current: 0.1µA
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: Zener
Case: SC79; SOD523
Zener voltage: 30V
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 30V; SMD; reel,tape; SC79,SOD523; single diode
Mounting: SMD
Leakage current: 0.1µA
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: Zener
Case: SC79; SOD523
Zener voltage: 30V
Semiconductor structure: single diode
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| EDZVFHT2R30B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 30V; SMD; reel,tape; SC79,SOD523; single diode
Mounting: SMD
Leakage current: 0.1µA
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: Zener
Case: SC79; SOD523
Zener voltage: 30V
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 30V; SMD; reel,tape; SC79,SOD523; single diode
Mounting: SMD
Leakage current: 0.1µA
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: Zener
Case: SC79; SOD523
Zener voltage: 30V
Semiconductor structure: single diode
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| DTB123YKT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Current gain: 56
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SC59; SOT346
Frequency: 200MHz
Collector-emitter voltage: 50V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Current gain: 56
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SC59; SOT346
Frequency: 200MHz
Collector-emitter voltage: 50V
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| SCT3160KW7TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; Idm: 42A; 100W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Pulsed drain current: 42A
Power dissipation: 100W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 208mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; Idm: 42A; 100W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Pulsed drain current: 42A
Power dissipation: 100W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 208mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RRR030P03HZGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1W; SOT346; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1W
Case: SOT346
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1W; SOT346; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1W
Case: SOT346
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2991 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 52.91 грн |
| 12+ | 32.73 грн |
| 56+ | 16.25 грн |
| 153+ | 15.42 грн |
| RRQ030P03FRATR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.25W
Case: SOT457
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.25W
Case: SOT457
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Version: ESD
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| RRR030P03FRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1W; SOT346
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1W
Case: SOT346
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1W; SOT346
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1W
Case: SOT346
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Version: ESD
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| RF4C050APTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -20A; 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 55nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: DFN2020-8S
Drain-source voltage: -20V
Drain current: -10A
On-state resistance: 26mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -20A; 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 55nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: DFN2020-8S
Drain-source voltage: -20V
Drain current: -10A
On-state resistance: 26mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
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| RF4C100BCTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -36A; 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23.5nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -36A
Mounting: SMD
Case: DFN2020-8S
Drain-source voltage: -20V
Drain current: -10A
On-state resistance: 15.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -36A; 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23.5nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -36A
Mounting: SMD
Case: DFN2020-8S
Drain-source voltage: -20V
Drain current: -10A
On-state resistance: 15.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
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| RSJ550N10TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 110A; 100W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 100W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 110A; 100W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 100W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
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| RBS1MM40ATR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Leakage current: 0.4mA
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Leakage current: 0.4mA
Max. forward impulse current: 25A
Kind of package: reel; tape
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| RBS1LAM40ATR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Leakage current: 0.4mA
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Leakage current: 0.4mA
Max. forward impulse current: 40A
Kind of package: reel; tape
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| RBS2LAM40CTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 0.8mA
Max. forward impulse current: 80A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 0.8mA
Max. forward impulse current: 80A
Kind of package: reel; tape
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| RBS3LAM40BTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 20V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Leakage current: 0.6mA
Max. forward impulse current: 60A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 20V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Leakage current: 0.6mA
Max. forward impulse current: 60A
Kind of package: reel; tape
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| BV2HC045EFU-CE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 2; SMD; -40÷150°C; 6÷19V
Type of integrated circuit: power switch
Number of channels: 2
Mounting: SMD
Supply voltage: 6...19V
Operating temperature: -40...150°C
On-state resistance: 0.1Ω
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 2; SMD; -40÷150°C; 6÷19V
Type of integrated circuit: power switch
Number of channels: 2
Mounting: SMD
Supply voltage: 6...19V
Operating temperature: -40...150°C
On-state resistance: 0.1Ω
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
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| SCS312AJTLL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 12A; reel,tape
Mounting: SMD
Max. off-state voltage: 650V
Max. load current: 55A
Max. forward voltage: 1.71V
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 350A
Leakage current: 240µA
Power dissipation: 88W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263AB
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 12A; reel,tape
Mounting: SMD
Max. off-state voltage: 650V
Max. load current: 55A
Max. forward voltage: 1.71V
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 350A
Leakage current: 240µA
Power dissipation: 88W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263AB
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| RF01VM2STE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V
Kind of package: reel; tape
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 1A
Type of diode: rectifying
Mounting: SMD
Case: SC90A; SOD323F
Max. off-state voltage: 250V
Max. load current: 0.3A
Max. forward voltage: 1.2V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V
Kind of package: reel; tape
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 1A
Type of diode: rectifying
Mounting: SMD
Case: SC90A; SOD323F
Max. off-state voltage: 250V
Max. load current: 0.3A
Max. forward voltage: 1.2V
на замовлення 2235 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 14.65 грн |
| 42+ | 9.15 грн |
| 100+ | 5.46 грн |
| 308+ | 2.94 грн |
| 846+ | 2.78 грн |
| RF081MM2STR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.8A; 25ns; SOD123F; Ufmax: 0.98V
Mounting: SMD
Max. off-state voltage: 200V
Max. forward voltage: 0.98V
Load current: 0.8A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 20A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD123F
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.8A; 25ns; SOD123F; Ufmax: 0.98V
Mounting: SMD
Max. off-state voltage: 200V
Max. forward voltage: 0.98V
Load current: 0.8A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 20A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD123F
на замовлення 1627 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 32.56 грн |
| 23+ | 17.01 грн |
| 28+ | 13.91 грн |
| 50+ | 11.87 грн |
| 100+ | 10.20 грн |
| 123+ | 7.26 грн |
| 338+ | 6.88 грн |
| 1000+ | 6.65 грн |
| RFN1LAM6STR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SOD128; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.45V
Max. forward impulse current: 15A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SOD128; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.45V
Max. forward impulse current: 15A
Kind of package: reel; tape
на замовлення 2670 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 29.31 грн |
| 23+ | 16.93 грн |
| 100+ | 10.20 грн |
| 121+ | 7.33 грн |
| 333+ | 6.88 грн |
| 1000+ | 6.65 грн |
| SML-D13WWT86A |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 112mcd; 20mA; 587nm; Lens: white; Front: flat
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 112mcd
LED current: 20mA
Wavelength: 587nm
LED lens: white
Front: flat
Category: SMD colour LEDs
Description: LED; yellow; SMD; 112mcd; 20mA; 587nm; Lens: white; Front: flat
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 112mcd
LED current: 20mA
Wavelength: 587nm
LED lens: white
Front: flat
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| SML-D13WWT86C |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 110mcd; 160°; 20mA; 587nm; Lens: white,diffused
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 110mcd
Viewing angle: 160°
LED current: 20mA
Wavelength: 587nm
LED lens: diffused; white
Front: flat
Category: SMD colour LEDs
Description: LED; yellow; SMD; 110mcd; 160°; 20mA; 587nm; Lens: white,diffused
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 110mcd
Viewing angle: 160°
LED current: 20mA
Wavelength: 587nm
LED lens: diffused; white
Front: flat
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| SML-D12Y3WT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 40mcd; 20mA; 581nm; Lens: white; Front: flat
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 40mcd
LED current: 20mA
Wavelength: 581nm
LED lens: white
Front: flat
Category: SMD colour LEDs
Description: LED; yellow; SMD; 40mcd; 20mA; 581nm; Lens: white; Front: flat
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 40mcd
LED current: 20mA
Wavelength: 581nm
LED lens: white
Front: flat
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| RSJ650N10TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 130A
Power dissipation: 100W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 130A
Power dissipation: 100W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RB400VAM-50TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Leakage current: 50µA
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| RB400DT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC59,SOT346; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SC59; SOT346
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC59,SOT346; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SC59; SOT346
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Leakage current: 50µA
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| RB400VYM-50FHTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Leakage current: 50µA
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| BD5240G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Manufacturer series: BD52
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 4V
Kind of integrated circuit: voltage detector
Case: SSOP5
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Manufacturer series: BD52
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 4V
Kind of integrated circuit: voltage detector
Case: SSOP5
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| SCT3030ALHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
On-state resistance: 39mΩ
Drain current: 70A
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 650V
Case: TO247
Gate charge: 104nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 175A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
On-state resistance: 39mΩ
Drain current: 70A
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 650V
Case: TO247
Gate charge: 104nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 175A
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| SCT3030ALGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
On-state resistance: 39mΩ
Drain current: 70A
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 650V
Case: TO247
Gate charge: 104nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 175A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
On-state resistance: 39mΩ
Drain current: 70A
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 650V
Case: TO247
Gate charge: 104nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 175A
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| SCT3030ARC14 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
On-state resistance: 39mΩ
Drain current: 70A
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 650V
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Gate charge: 104nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 175A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
On-state resistance: 39mΩ
Drain current: 70A
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 650V
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Gate charge: 104nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 175A
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| SCT3030AW7TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W
On-state resistance: 39mΩ
Drain current: 70A
Power dissipation: 267W
Polarisation: unipolar
Kind of package: reel; tape
Drain-source voltage: 650V
Case: TO263-7
Gate charge: 104nC
Mounting: SMD
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 175A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W
On-state resistance: 39mΩ
Drain current: 70A
Power dissipation: 267W
Polarisation: unipolar
Kind of package: reel; tape
Drain-source voltage: 650V
Case: TO263-7
Gate charge: 104nC
Mounting: SMD
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 175A
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| SCT3030KLGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
On-state resistance: 39mΩ
Drain current: 72A
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 1.2kV
Case: TO247
Gate charge: 131nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 180A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
On-state resistance: 39mΩ
Drain current: 72A
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 1.2kV
Case: TO247
Gate charge: 131nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 180A
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| SCT3030KLHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
On-state resistance: 39mΩ
Drain current: 72A
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 1.2kV
Case: TO247
Gate charge: 131nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 180A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
On-state resistance: 39mΩ
Drain current: 72A
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 1.2kV
Case: TO247
Gate charge: 131nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 180A
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| RB055LAM-40TFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 40V
Max. forward voltage: 0.62V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 0.1mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 40V
Max. forward voltage: 0.62V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 0.1mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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| RB055LAM-30TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 30V
Max. forward voltage: 0.55V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 55A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 30V
Max. forward voltage: 0.55V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 55A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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| RB055LAM-30TFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 30V
Max. forward voltage: 0.55V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 55A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 30V
Max. forward voltage: 0.55V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 55A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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| RB055LAM-60TFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 60V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 60V
Max. forward voltage: 0.68V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 70µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 60V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 60V
Max. forward voltage: 0.68V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 70µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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| RGT50NS65DGC9 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO262
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO262
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
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| RGT50TM65DGC9 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 13A
Power dissipation: 23W
Case: TO220NFM
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 13A
Power dissipation: 23W
Case: TO220NFM
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
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| RGT50NS65DGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
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