Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102254) > Сторінка 1703 з 1705
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| SCT3030KLGC11 | ROHM SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W On-state resistance: 39mΩ Drain current: 72A Power dissipation: 339W Polarisation: unipolar Kind of package: tube Drain-source voltage: 1.2kV Case: TO247 Gate charge: 131nC Mounting: THT Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Type of transistor: N-MOSFET Pulsed drain current: 180A |
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| SCT3030KLHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W On-state resistance: 39mΩ Drain current: 72A Power dissipation: 339W Polarisation: unipolar Kind of package: tube Drain-source voltage: 1.2kV Case: TO247 Gate charge: 131nC Mounting: THT Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Type of transistor: N-MOSFET Pulsed drain current: 180A |
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| RB055LAM-40TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 3A; reel,tape Case: SOD128 Max. off-state voltage: 40V Max. forward voltage: 0.62V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 70A Leakage current: 0.1mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
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| RB055LAM-30TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 3A; reel,tape Case: SOD128 Max. off-state voltage: 30V Max. forward voltage: 0.55V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 55A Leakage current: 50µA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
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| RB055LAM-30TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 3A; reel,tape Case: SOD128 Max. off-state voltage: 30V Max. forward voltage: 0.55V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 55A Leakage current: 50µA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
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| RB055LAM-60TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD128; SMD; 60V; 3A; reel,tape Case: SOD128 Max. off-state voltage: 60V Max. forward voltage: 0.68V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 50A Leakage current: 70µA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
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| RGT50NS65DGC9 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; TO262 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: TO262 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 49nC Kind of package: tube Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode |
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| RGT50TM65DGC9 | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 13A Power dissipation: 23W Case: TO220NFM Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: SMD Gate charge: 49nC Kind of package: tube Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode |
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| RGT50NS65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; LPDS Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: LPDS Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode |
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| BD5360FVE-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Kind of RESET output: CMOS Active logical level: low Supply voltage: 950mV DC...10V DC Case: VSOF5 Operating temperature: -40...105°C Mounting: SMD Threshold on-voltage: 6V Kind of package: reel; tape Number of channels: 1 Integrated circuit features: ±1% accuracy Manufacturer series: BD53 |
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RF4E100AJTCR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10A Pulsed drain current: 36A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±12V On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2890 шт: термін постачання 21-30 дні (днів) |
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IMD3AT108 | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC74; SOT457 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
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| SML-D15YWT86C | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; yellow; SMD; 224mcd; 20mA; 590nm; Lens: white,diffused Type of diode: LED LED colour: yellow Mounting: SMD Luminosity: 224mcd LED current: 20mA Wavelength: 590nm LED lens: diffused; white Front: flat |
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| SML-D11YWT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; yellow; SMD; 4mcd; 2mA; 588nm; Lens: white; Front: flat Type of diode: LED LED colour: yellow Mounting: SMD Luminosity: 4mcd LED current: 2mA Wavelength: 588nm LED lens: white Front: flat |
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| SML-D14YWT86C | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; yellow; SMD; 200mcd; 20mA; 590nm; Lens: white,diffused Type of diode: LED LED colour: yellow Mounting: SMD Luminosity: 200mcd LED current: 20mA Wavelength: 590nm LED lens: diffused; white Front: flat |
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| SML-D15YWT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; yellow; SMD; 0603; 224mcd; 20mA; 590nm; Lens: white,diffused Type of diode: LED LED colour: yellow Mounting: SMD Luminosity: 224mcd LED current: 20mA Wavelength: 590nm LED lens: diffused; white Front: flat Case: 0603 |
товару немає в наявності |
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SH8M41TB1 | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 80/-80V Drain current: 3.4/-2.6A Pulsed drain current: 10.4...13.6A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 160/310mΩ Mounting: SMD Gate charge: 6.6/8.2nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1691 шт: термін постачання 21-30 дні (днів) |
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| BD46291G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Mounting: SMD Operating temperature: -40...105°C Case: SSOP5 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: Counter Timer Built-in Kind of package: reel; tape Threshold on-voltage: 2.9V Manufacturer series: BD46 Kind of integrated circuit: voltage detector |
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| BR24T256F-WE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz; SOP8 Operating temperature: -40...85°C Case: SOP8 Supply voltage: 1.6...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 400kHz Kind of package: reel; tape Kind of interface: serial Memory: 256kb EEPROM Mounting: SMD |
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| BR24T256FJ-WE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz Operating temperature: -40...85°C Case: SOP-J8 Supply voltage: 1.6...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 400kHz Kind of package: reel; tape Kind of interface: serial Memory: 256kb EEPROM Mounting: SMD |
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| BR24T256FVT-WE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz Operating temperature: -40...85°C Case: TSSOP-B8 Supply voltage: 1.6...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 400kHz Kind of package: reel; tape Kind of interface: serial Memory: 256kb EEPROM Mounting: SMD |
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В кошику од. на суму грн. | |||||||||||
| DTA043EUBTL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 4.7kΩ Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 20 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Mounting: SMD Case: SOT323F |
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| DTA043ZUBTL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 4.7kΩ Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 80 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Mounting: SMD Case: SOT323F |
товару немає в наявності |
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| DTC143ZEBTL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC89 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
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| DTC143ZETL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
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| DTC143ZEFRATL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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RSH070P05GZETB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -45V Drain current: -7A Pulsed drain current: -28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSH070P05TB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -45V Drain current: -7A Pulsed drain current: -28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| SCT3105KRC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 60A; 134W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 24A Pulsed drain current: 60A Power dissipation: 134W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 137mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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| BD5228FVE-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 2.8V Manufacturer series: BD52 Kind of integrated circuit: voltage detector Mounting: SMD Operating temperature: -40...105°C Case: VSOF5 |
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В кошику од. на суму грн. | |||||||||||
| BD5228G-2MTR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Supply voltage: 800mV DC...7V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Kind of package: reel; tape Threshold on-voltage: 2.8V Manufacturer series: BD52 Kind of integrated circuit: voltage detector Mounting: SMD Operating temperature: -40...105°C Case: SSOP5 |
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В кошику од. на суму грн. | |||||||||||
| BD5228G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 2.8V Manufacturer series: BD52 Kind of integrated circuit: voltage detector Mounting: SMD Operating temperature: -40...105°C Case: SSOP5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DTC143ZMFHAT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ Case: SOT723 Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 80 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.15W Polarisation: bipolar Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| RB715UMFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; UMD3F; SMD; 40V; 30mA; reel,tape Type of diode: Schottky rectifying Case: UMD3F Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: common cathode; double Max. forward voltage: 0.37V Leakage current: 1µA Max. forward impulse current: 0.2A Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||
| DTC144EMFHAT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ Case: SOT723 Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 68 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.15W Polarisation: bipolar Kind of transistor: BRT Base resistor: 47kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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EM6M2T2R | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.2/-0.2A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±8/±10V On-state resistance: 1/1.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.4A Version: ESD |
на замовлення 4700 шт: термін постачання 21-30 дні (днів) |
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RN731VTE-17 | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V Type of diode: switching Max. off-state voltage: 50V Load current: 50mA Case: SC90A; SOD323F Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Max. forward voltage: 1V Kind of package: reel; tape Leakage current: 0.1µA Capacitance: 0.4pF |
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В кошику од. на суму грн. | ||||||||||
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RN771VTE-17 | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V Type of diode: switching Max. off-state voltage: 50V Load current: 50mA Case: SC90A; SOD323F Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Max. forward voltage: 1V Kind of package: reel; tape Leakage current: 0.1µA Capacitance: 0.9pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RSX101VAM30TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323HE; SMD; 30V; reel,tape Mounting: SMD Case: SOD323HE Max. off-state voltage: 30V Max. forward voltage: 0.47V Semiconductor structure: single diode Leakage current: 0.2mA Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward impulse current: 5A |
на замовлення 2690 шт: термін постачання 21-30 дні (днів) |
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| BU4224F-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1 Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 2.4V Manufacturer series: BU42 Kind of integrated circuit: voltage detector Mounting: SMD Case: SOP4 |
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В кошику од. на суму грн. | |||||||||||
| BU4224G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 2.4V Manufacturer series: BU42 Kind of integrated circuit: voltage detector Mounting: SMD Case: SSOP5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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RRS100P03HZGTB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8; ESD Case: SOP8 Drain-source voltage: -30V Drain current: -10A On-state resistance: 12.6mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Version: ESD Gate charge: 39nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -40A Mounting: SMD |
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В кошику од. на суму грн. | ||||||||||
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RRL035P03TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Version: ESD Gate charge: 8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -14A Case: SOT363 Drain-source voltage: -30V Drain current: -3.5A On-state resistance: 50mΩ Type of transistor: P-MOSFET Power dissipation: 1W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RRL035P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Version: ESD Gate charge: 14nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -14A Case: SOT363 Drain-source voltage: -30V Drain current: -3.5A On-state resistance: 50mΩ Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1W |
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В кошику од. на суму грн. | ||||||||||
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SML-P11MTT86R | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; yellow green; SMD; 0402; 1÷2.1mcd; 1x0.6x0.2mm; 1mA; 54mW Power: 54mW LED colour: yellow green Type of diode: LED Wavelength: 466...574nm LED lens: transparent Luminosity: 1...2.1mcd LED current: 1mA Dimensions: 1x0.6x0.2mm Manufacturer series: PicoLED™ Front: flat Mounting: SMD Case: 0402 Operating voltage: 1.9V DC |
на замовлення 3443 шт: термін постачання 21-30 дні (днів) |
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SP8M10FRATB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/-4.5A; Idm: 18÷28A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 7/-4.5A Pulsed drain current: 18...28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 37/90mΩ Mounting: SMD Gate charge: 8.4/8.5nC Kind of package: reel; tape Kind of channel: enhancement |
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SP8M21FRATB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 45/-45V; 6/-4A; Idm: 16÷24A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 45/-45V Drain current: 6/-4A Pulsed drain current: 16...24A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 37/65mΩ Mounting: SMD Gate charge: 15.4/20nC Kind of package: reel; tape Kind of channel: enhancement |
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SP8M6FRATB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5/-3.5A; Idm: 14÷20A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5/-3.5A Pulsed drain current: 14...20A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 82/165mΩ Mounting: SMD Gate charge: 3.9/5.5nC Kind of package: reel; tape Kind of channel: enhancement |
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SP8M8FRATB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-4.5A; Idm: 18÷24A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 6/-4.5A Pulsed drain current: 18...24A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 47/90mΩ Mounting: SMD Gate charge: 7.2/8.5nC Kind of package: reel; tape Kind of channel: enhancement |
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| BA4558YFVM-MGTR | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2MHz; Ch: 2; MSOP8; ±4÷15VDC,8÷30VDC Operating temperature: -40...105°C Type of integrated circuit: operational amplifier Number of channels: 2 Bandwidth: 2MHz Input offset voltage: 7mV Kind of package: reel; tape Slew rate: 1V/μs Input offset current: 200nA Input bias current: 0.8µA Voltage supply range: ± 4...15V DC; 8...30V DC Mounting: SMT Case: MSOP8 |
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| SLR-56DU3F | ROHM SEMICONDUCTOR |
Category: THT LEDs Round Description: LED; orange; 10mcd; 40°; Front: convex LED colour: orange Type of diode: LED Wavelength: 610nm LED lens: diffused Luminosity: 10mcd LED current: 10mA Viewing angle: 40° Front: convex Mounting: THT |
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| SLI-343DU3F | ROHM SEMICONDUCTOR |
Category: THT LEDs Round Description: LED; orange; 350mcd; 40°; Front: convex LED colour: orange Type of diode: LED Wavelength: 611nm LED lens: diffused Luminosity: 350mcd LED current: 20mA Viewing angle: 40° Front: convex Mounting: THT |
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| SLR-343DU3F | ROHM SEMICONDUCTOR |
Category: THT LEDs Round Description: LED; orange; 16mcd; 40°; Front: convex LED colour: orange Type of diode: LED Wavelength: 610nm LED lens: diffused Luminosity: 16mcd LED current: 10mA Viewing angle: 40° Front: convex Mounting: THT |
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| SLI-343D8U3F | ROHM SEMICONDUCTOR |
Category: THT LEDs Round Description: LED; orange; 470mcd; 40°; Front: convex LED colour: orange Type of diode: LED Wavelength: 605nm LED lens: diffused Luminosity: 470mcd LED current: 20mA Viewing angle: 40° Front: convex Mounting: THT |
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| BA7824FP-E2 | ROHM SEMICONDUCTOR |
Category: Fixed voltage regulators Description: IC: voltage regulator; fixed; 24V; 1A; TO252-3; SMD; reel,tape; Ch: 1 Type of integrated circuit: voltage regulator Operating temperature: -40...85°C Case: TO252-3 Output voltage: 24V Output current: 1A Voltage drop: 2V Mounting: SMD Number of channels: 1 Input voltage: 21...33V Kind of package: reel; tape Kind of voltage regulator: fixed |
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| RUR020N02TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 6A; 1W; TSMT3 Mounting: SMD Drain-source voltage: 20V Drain current: 2A On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 6A Case: TSMT3 |
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| RUR040N02FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3 Mounting: SMD Drain-source voltage: 20V Drain current: 4A On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 8A Case: TSMT3 |
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| RUR040N02TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3 Mounting: SMD Drain-source voltage: 20V Drain current: 4A On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 8A Case: TSMT3 |
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| TFZVTR15B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD323HE; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Kind of package: reel; tape Case: SOD323HE Semiconductor structure: single diode Leakage current: 0.2µA |
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| BA25BC0FP-E2 | ROHM SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; TO252-3; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 2.5V Output current: 1A Case: TO252-3 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...105°C Tolerance: ±2% Number of channels: 1 Input voltage: 3...16V |
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| SCT3030KLGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
On-state resistance: 39mΩ
Drain current: 72A
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 1.2kV
Case: TO247
Gate charge: 131nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 180A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
On-state resistance: 39mΩ
Drain current: 72A
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 1.2kV
Case: TO247
Gate charge: 131nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 180A
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| SCT3030KLHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
On-state resistance: 39mΩ
Drain current: 72A
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 1.2kV
Case: TO247
Gate charge: 131nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 180A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
On-state resistance: 39mΩ
Drain current: 72A
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 1.2kV
Case: TO247
Gate charge: 131nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 180A
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| RB055LAM-40TFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 40V
Max. forward voltage: 0.62V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 0.1mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 40V
Max. forward voltage: 0.62V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 0.1mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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| RB055LAM-30TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 30V
Max. forward voltage: 0.55V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 55A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 30V
Max. forward voltage: 0.55V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 55A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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| RB055LAM-30TFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 30V
Max. forward voltage: 0.55V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 55A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 30V
Max. forward voltage: 0.55V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 55A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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| RB055LAM-60TFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 60V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 60V
Max. forward voltage: 0.68V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 70µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 60V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 60V
Max. forward voltage: 0.68V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 70µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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| RGT50NS65DGC9 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO262
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO262
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
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| RGT50TM65DGC9 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 13A
Power dissipation: 23W
Case: TO220NFM
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 13A
Power dissipation: 23W
Case: TO220NFM
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
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| RGT50NS65DGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
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| BD5360FVE-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: VSOF5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 6V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD53
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: VSOF5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 6V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD53
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| RF4E100AJTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±12V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±12V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.34 грн |
| 12+ | 33.94 грн |
| 49+ | 18.73 грн |
| 133+ | 17.74 грн |
| IMD3AT108 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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| SML-D15YWT86C |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 224mcd; 20mA; 590nm; Lens: white,diffused
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 224mcd
LED current: 20mA
Wavelength: 590nm
LED lens: diffused; white
Front: flat
Category: SMD colour LEDs
Description: LED; yellow; SMD; 224mcd; 20mA; 590nm; Lens: white,diffused
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 224mcd
LED current: 20mA
Wavelength: 590nm
LED lens: diffused; white
Front: flat
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| SML-D11YWT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 4mcd; 2mA; 588nm; Lens: white; Front: flat
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 4mcd
LED current: 2mA
Wavelength: 588nm
LED lens: white
Front: flat
Category: SMD colour LEDs
Description: LED; yellow; SMD; 4mcd; 2mA; 588nm; Lens: white; Front: flat
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 4mcd
LED current: 2mA
Wavelength: 588nm
LED lens: white
Front: flat
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| SML-D14YWT86C |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 200mcd; 20mA; 590nm; Lens: white,diffused
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 200mcd
LED current: 20mA
Wavelength: 590nm
LED lens: diffused; white
Front: flat
Category: SMD colour LEDs
Description: LED; yellow; SMD; 200mcd; 20mA; 590nm; Lens: white,diffused
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 200mcd
LED current: 20mA
Wavelength: 590nm
LED lens: diffused; white
Front: flat
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| SML-D15YWT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0603; 224mcd; 20mA; 590nm; Lens: white,diffused
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 224mcd
LED current: 20mA
Wavelength: 590nm
LED lens: diffused; white
Front: flat
Case: 0603
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0603; 224mcd; 20mA; 590nm; Lens: white,diffused
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 224mcd
LED current: 20mA
Wavelength: 590nm
LED lens: diffused; white
Front: flat
Case: 0603
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| SH8M41TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 80/-80V
Drain current: 3.4/-2.6A
Pulsed drain current: 10.4...13.6A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 160/310mΩ
Mounting: SMD
Gate charge: 6.6/8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 80/-80V
Drain current: 3.4/-2.6A
Pulsed drain current: 10.4...13.6A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 160/310mΩ
Mounting: SMD
Gate charge: 6.6/8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1691 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 140.78 грн |
| 10+ | 96.55 грн |
| 27+ | 33.64 грн |
| 73+ | 31.80 грн |
| BD46291G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: Counter Timer Built-in
Kind of package: reel; tape
Threshold on-voltage: 2.9V
Manufacturer series: BD46
Kind of integrated circuit: voltage detector
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: Counter Timer Built-in
Kind of package: reel; tape
Threshold on-voltage: 2.9V
Manufacturer series: BD46
Kind of integrated circuit: voltage detector
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| BR24T256F-WE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz; SOP8
Operating temperature: -40...85°C
Case: SOP8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz; SOP8
Operating temperature: -40...85°C
Case: SOP8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
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| BR24T256FJ-WE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
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| BR24T256FVT-WE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz
Operating temperature: -40...85°C
Case: TSSOP-B8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz
Operating temperature: -40...85°C
Case: TSSOP-B8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
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| DTA043EUBTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 4.7kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 20
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Mounting: SMD
Case: SOT323F
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 4.7kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 20
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Mounting: SMD
Case: SOT323F
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| DTA043ZUBTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 4.7kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT323F
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 4.7kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT323F
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| DTC143ZEBTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
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| DTC143ZETL |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
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| DTC143ZEFRATL |
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
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| RSH070P05GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RSH070P05TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SCT3105KRC14 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 60A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 134W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 137mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 60A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 134W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 137mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| BD5228FVE-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.8V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...105°C
Case: VSOF5
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.8V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...105°C
Case: VSOF5
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| BD5228G-2MTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Supply voltage: 800mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Threshold on-voltage: 2.8V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Supply voltage: 800mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Threshold on-voltage: 2.8V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
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| BD5228G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.8V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.8V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
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| DTC143ZMFHAT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
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| RB715UMFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; UMD3F; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: UMD3F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: common cathode; double
Max. forward voltage: 0.37V
Leakage current: 1µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; UMD3F; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: UMD3F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: common cathode; double
Max. forward voltage: 0.37V
Leakage current: 1µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
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| DTC144EMFHAT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 68
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 68
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
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| EM6M2T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.2/-0.2A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±8/±10V
On-state resistance: 1/1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.4A
Version: ESD
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.2/-0.2A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±8/±10V
On-state resistance: 1/1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.4A
Version: ESD
на замовлення 4700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.41 грн |
| 28+ | 14.07 грн |
| 100+ | 10.86 грн |
| 126+ | 7.19 грн |
| 345+ | 6.73 грн |
| RN731VTE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC90A; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.4pF
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC90A; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.4pF
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| RN771VTE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC90A; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.9pF
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC90A; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.9pF
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| RSX101VAM30TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 30V; reel,tape
Mounting: SMD
Case: SOD323HE
Max. off-state voltage: 30V
Max. forward voltage: 0.47V
Semiconductor structure: single diode
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward impulse current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 30V; reel,tape
Mounting: SMD
Case: SOD323HE
Max. off-state voltage: 30V
Max. forward voltage: 0.47V
Semiconductor structure: single diode
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward impulse current: 5A
на замовлення 2690 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.41 грн |
| 36+ | 10.86 грн |
| 100+ | 7.81 грн |
| 247+ | 3.61 грн |
| 679+ | 3.41 грн |
| BU4224F-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.4V
Manufacturer series: BU42
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: SOP4
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.4V
Manufacturer series: BU42
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: SOP4
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| BU4224G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.4V
Manufacturer series: BU42
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: SSOP5
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.4V
Manufacturer series: BU42
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: SSOP5
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| RRS100P03HZGTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8; ESD
Case: SOP8
Drain-source voltage: -30V
Drain current: -10A
On-state resistance: 12.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Gate charge: 39nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8; ESD
Case: SOP8
Drain-source voltage: -30V
Drain current: -10A
On-state resistance: 12.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Gate charge: 39nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
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| RRL035P03TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Gate charge: 8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -14A
Case: SOT363
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Gate charge: 8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -14A
Case: SOT363
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
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| RRL035P03FRATR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -14A
Case: SOT363
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -14A
Case: SOT363
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1W
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| SML-P11MTT86R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow green; SMD; 0402; 1÷2.1mcd; 1x0.6x0.2mm; 1mA; 54mW
Power: 54mW
LED colour: yellow green
Type of diode: LED
Wavelength: 466...574nm
LED lens: transparent
Luminosity: 1...2.1mcd
LED current: 1mA
Dimensions: 1x0.6x0.2mm
Manufacturer series: PicoLED™
Front: flat
Mounting: SMD
Case: 0402
Operating voltage: 1.9V DC
Category: SMD colour LEDs
Description: LED; yellow green; SMD; 0402; 1÷2.1mcd; 1x0.6x0.2mm; 1mA; 54mW
Power: 54mW
LED colour: yellow green
Type of diode: LED
Wavelength: 466...574nm
LED lens: transparent
Luminosity: 1...2.1mcd
LED current: 1mA
Dimensions: 1x0.6x0.2mm
Manufacturer series: PicoLED™
Front: flat
Mounting: SMD
Case: 0402
Operating voltage: 1.9V DC
на замовлення 3443 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 27.99 грн |
| 26+ | 14.91 грн |
| 100+ | 7.72 грн |
| 156+ | 5.73 грн |
| 427+ | 5.43 грн |
| SP8M10FRATB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/-4.5A; Idm: 18÷28A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7/-4.5A
Pulsed drain current: 18...28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 37/90mΩ
Mounting: SMD
Gate charge: 8.4/8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/-4.5A; Idm: 18÷28A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7/-4.5A
Pulsed drain current: 18...28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 37/90mΩ
Mounting: SMD
Gate charge: 8.4/8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SP8M21FRATB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 45/-45V; 6/-4A; Idm: 16÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 45/-45V
Drain current: 6/-4A
Pulsed drain current: 16...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 37/65mΩ
Mounting: SMD
Gate charge: 15.4/20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 45/-45V; 6/-4A; Idm: 16÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 45/-45V
Drain current: 6/-4A
Pulsed drain current: 16...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 37/65mΩ
Mounting: SMD
Gate charge: 15.4/20nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SP8M6FRATB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5/-3.5A; Idm: 14÷20A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5/-3.5A
Pulsed drain current: 14...20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 82/165mΩ
Mounting: SMD
Gate charge: 3.9/5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5/-3.5A; Idm: 14÷20A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5/-3.5A
Pulsed drain current: 14...20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 82/165mΩ
Mounting: SMD
Gate charge: 3.9/5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SP8M8FRATB |
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-4.5A; Idm: 18÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6/-4.5A
Pulsed drain current: 18...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 47/90mΩ
Mounting: SMD
Gate charge: 7.2/8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-4.5A; Idm: 18÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6/-4.5A
Pulsed drain current: 18...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 47/90mΩ
Mounting: SMD
Gate charge: 7.2/8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BA4558YFVM-MGTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 2; MSOP8; ±4÷15VDC,8÷30VDC
Operating temperature: -40...105°C
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 2MHz
Input offset voltage: 7mV
Kind of package: reel; tape
Slew rate: 1V/μs
Input offset current: 200nA
Input bias current: 0.8µA
Voltage supply range: ± 4...15V DC; 8...30V DC
Mounting: SMT
Case: MSOP8
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 2; MSOP8; ±4÷15VDC,8÷30VDC
Operating temperature: -40...105°C
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 2MHz
Input offset voltage: 7mV
Kind of package: reel; tape
Slew rate: 1V/μs
Input offset current: 200nA
Input bias current: 0.8µA
Voltage supply range: ± 4...15V DC; 8...30V DC
Mounting: SMT
Case: MSOP8
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| SLR-56DU3F |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT LEDs Round
Description: LED; orange; 10mcd; 40°; Front: convex
LED colour: orange
Type of diode: LED
Wavelength: 610nm
LED lens: diffused
Luminosity: 10mcd
LED current: 10mA
Viewing angle: 40°
Front: convex
Mounting: THT
Category: THT LEDs Round
Description: LED; orange; 10mcd; 40°; Front: convex
LED colour: orange
Type of diode: LED
Wavelength: 610nm
LED lens: diffused
Luminosity: 10mcd
LED current: 10mA
Viewing angle: 40°
Front: convex
Mounting: THT
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| SLI-343DU3F |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT LEDs Round
Description: LED; orange; 350mcd; 40°; Front: convex
LED colour: orange
Type of diode: LED
Wavelength: 611nm
LED lens: diffused
Luminosity: 350mcd
LED current: 20mA
Viewing angle: 40°
Front: convex
Mounting: THT
Category: THT LEDs Round
Description: LED; orange; 350mcd; 40°; Front: convex
LED colour: orange
Type of diode: LED
Wavelength: 611nm
LED lens: diffused
Luminosity: 350mcd
LED current: 20mA
Viewing angle: 40°
Front: convex
Mounting: THT
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| SLR-343DU3F |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT LEDs Round
Description: LED; orange; 16mcd; 40°; Front: convex
LED colour: orange
Type of diode: LED
Wavelength: 610nm
LED lens: diffused
Luminosity: 16mcd
LED current: 10mA
Viewing angle: 40°
Front: convex
Mounting: THT
Category: THT LEDs Round
Description: LED; orange; 16mcd; 40°; Front: convex
LED colour: orange
Type of diode: LED
Wavelength: 610nm
LED lens: diffused
Luminosity: 16mcd
LED current: 10mA
Viewing angle: 40°
Front: convex
Mounting: THT
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| SLI-343D8U3F |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT LEDs Round
Description: LED; orange; 470mcd; 40°; Front: convex
LED colour: orange
Type of diode: LED
Wavelength: 605nm
LED lens: diffused
Luminosity: 470mcd
LED current: 20mA
Viewing angle: 40°
Front: convex
Mounting: THT
Category: THT LEDs Round
Description: LED; orange; 470mcd; 40°; Front: convex
LED colour: orange
Type of diode: LED
Wavelength: 605nm
LED lens: diffused
Luminosity: 470mcd
LED current: 20mA
Viewing angle: 40°
Front: convex
Mounting: THT
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| BA7824FP-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; fixed; 24V; 1A; TO252-3; SMD; reel,tape; Ch: 1
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Case: TO252-3
Output voltage: 24V
Output current: 1A
Voltage drop: 2V
Mounting: SMD
Number of channels: 1
Input voltage: 21...33V
Kind of package: reel; tape
Kind of voltage regulator: fixed
Category: Fixed voltage regulators
Description: IC: voltage regulator; fixed; 24V; 1A; TO252-3; SMD; reel,tape; Ch: 1
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Case: TO252-3
Output voltage: 24V
Output current: 1A
Voltage drop: 2V
Mounting: SMD
Number of channels: 1
Input voltage: 21...33V
Kind of package: reel; tape
Kind of voltage regulator: fixed
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| RUR020N02TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 6A; 1W; TSMT3
Mounting: SMD
Drain-source voltage: 20V
Drain current: 2A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 6A
Case: TSMT3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 6A; 1W; TSMT3
Mounting: SMD
Drain-source voltage: 20V
Drain current: 2A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 6A
Case: TSMT3
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| RUR040N02FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3
Mounting: SMD
Drain-source voltage: 20V
Drain current: 4A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 8A
Case: TSMT3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3
Mounting: SMD
Drain-source voltage: 20V
Drain current: 4A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 8A
Case: TSMT3
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| RUR040N02TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3
Mounting: SMD
Drain-source voltage: 20V
Drain current: 4A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 8A
Case: TSMT3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3
Mounting: SMD
Drain-source voltage: 20V
Drain current: 4A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 8A
Case: TSMT3
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| TFZVTR15B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323HE
Semiconductor structure: single diode
Leakage current: 0.2µA
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323HE
Semiconductor structure: single diode
Leakage current: 0.2µA
товару немає в наявності
В кошику
од. на суму грн.
| BA25BC0FP-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; TO252-3; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.5V
Output current: 1A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; TO252-3; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.5V
Output current: 1A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
товару немає в наявності
В кошику
од. на суму грн.