Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102856) > Сторінка 1715 з 1715
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BD5465GUL-E2 | ROHM SEMICONDUCTOR |
 Category: RTV - audio integrated circuitsDescription: IC: audio amplifier Type of integrated circuit: audio amplifier |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BD5467GUL-E2 | ROHM SEMICONDUCTOR |
Category: RTV - audio integrated circuits Description: IC: audio amplifier Type of integrated circuit: audio amplifier |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| RS1E280BNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 112A Power dissipation: 30W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| RQ3E120ATTB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -39A; Idm: -48A; 20W; HSMT8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -39A Pulsed drain current: -48A Power dissipation: 20W Case: HSMT8 Gate-source voltage: ±20V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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RB050L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Mounting: SMD Case: DO214AC; SMA Max. off-state voltage: 40V Max. forward voltage: 0.55V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 70A Leakage current: 1mA Kind of package: reel; tape Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RB058L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Mounting: SMD Case: DO214AC; SMA Max. off-state voltage: 40V Max. forward voltage: 0.69V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 100A Leakage current: 5µA Kind of package: reel; tape Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| RS1G120MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Pulsed drain current: 48A Drain-source voltage: 40V Drain current: 34A On-state resistance: 20.7mΩ Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Gate charge: 9.4nC Kind of channel: enhancement Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| RS1G150MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Pulsed drain current: 60A Drain-source voltage: 40V Drain current: 43A On-state resistance: 13.3mΩ Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Gate charge: 15nC Kind of channel: enhancement Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| RS1G201ATTB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Pulsed drain current: -80A Drain-source voltage: -40V Drain current: -78A On-state resistance: 6.5mΩ Type of transistor: P-MOSFET Power dissipation: 40W Polarisation: unipolar Gate charge: 130nC Kind of channel: enhancement Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| RS1G260MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Pulsed drain current: 104A Drain-source voltage: 40V Drain current: 80A On-state resistance: 4.4mΩ Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Gate charge: 44nC Kind of channel: enhancement Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| RS1G300GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Pulsed drain current: 120A Drain-source voltage: 40V Drain current: 80A On-state resistance: 3mΩ Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Gate charge: 56.8nC Kind of channel: enhancement Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| RK7002AT116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.2W Case: SST3 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1.2A Gate charge: 3nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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DA204UT106 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 20V; 0.1A; SC70,SOT323; Ufmax: 1V; Ifsm: 0.3A Case: SC70; SOT323 Max. off-state voltage: 20V Max. load current: 0.2A Max. forward voltage: 1V Load current: 0.1A Semiconductor structure: double series Max. forward impulse current: 0.3A Power dissipation: 0.2W Kind of package: reel; tape Type of diode: switching Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZX84C15VLYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; SOT23; single diode; 100nA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.1µA Application: automotive industry |
на замовлення 1274 шт: термін постачання 21-30 дні (днів) |
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BZX84C15VLFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; SOT23; single diode; 100nA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.1µA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZX84C15VLYT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. |
| BD5465GUL-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier
Type of integrated circuit: audio amplifier
Category: RTV - audio integrated circuits
Description: IC: audio amplifier
Type of integrated circuit: audio amplifier
товару немає в наявності
В кошику
од. на суму грн.
| BD5467GUL-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier
Type of integrated circuit: audio amplifier
Category: RTV - audio integrated circuits
Description: IC: audio amplifier
Type of integrated circuit: audio amplifier
товару немає в наявності
В кошику
од. на суму грн.
| RS1E280BNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 112A
Power dissipation: 30W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 112A
Power dissipation: 30W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| RQ3E120ATTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39A; Idm: -48A; 20W; HSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39A
Pulsed drain current: -48A
Power dissipation: 20W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39A; Idm: -48A; 20W; HSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39A
Pulsed drain current: -48A
Power dissipation: 20W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.97 грн |
| 11+ | 37.36 грн |
| 30+ | 30.62 грн |
| 82+ | 28.91 грн |
| 1000+ | 27.83 грн |
| RB050L-40DDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: DO214AC; SMA
Max. off-state voltage: 40V
Max. forward voltage: 0.55V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 1mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: DO214AC; SMA
Max. off-state voltage: 40V
Max. forward voltage: 0.55V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 1mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
товару немає в наявності
В кошику
од. на суму грн.
| RB058L-40DDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: DO214AC; SMA
Max. off-state voltage: 40V
Max. forward voltage: 0.69V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: DO214AC; SMA
Max. off-state voltage: 40V
Max. forward voltage: 0.69V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
товару немає в наявності
В кошику
од. на суму грн.
| RS1G120MNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: 48A
Drain-source voltage: 40V
Drain current: 34A
On-state resistance: 20.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Gate charge: 9.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: 48A
Drain-source voltage: 40V
Drain current: 34A
On-state resistance: 20.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Gate charge: 9.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
| RS1G150MNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 40V
Drain current: 43A
On-state resistance: 13.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 40V
Drain current: 43A
On-state resistance: 13.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
| RS1G201ATTB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: -80A
Drain-source voltage: -40V
Drain current: -78A
On-state resistance: 6.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 130nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: -80A
Drain-source voltage: -40V
Drain current: -78A
On-state resistance: 6.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 130nC
Kind of channel: enhancement
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
| RS1G260MNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: 104A
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 4.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: 104A
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 4.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhancement
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
| RS1G300GNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: 120A
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 56.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: 120A
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 56.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
| RK7002AT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.2W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
Gate charge: 3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.2W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
Gate charge: 3nC
товару немає в наявності
В кошику
од. на суму грн.
| DA204UT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.1A; SC70,SOT323; Ufmax: 1V; Ifsm: 0.3A
Case: SC70; SOT323
Max. off-state voltage: 20V
Max. load current: 0.2A
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: double series
Max. forward impulse current: 0.3A
Power dissipation: 0.2W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.1A; SC70,SOT323; Ufmax: 1V; Ifsm: 0.3A
Case: SC70; SOT323
Max. off-state voltage: 20V
Max. load current: 0.2A
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: double series
Max. forward impulse current: 0.3A
Power dissipation: 0.2W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C15VLYFHT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; SOT23; single diode; 100nA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; SOT23; single diode; 100nA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Application: automotive industry
на замовлення 1274 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.03 грн |
| 41+ | 9.53 грн |
| 100+ | 5.29 грн |
| 421+ | 2.16 грн |
| 1156+ | 2.05 грн |
| BZX84C15VLFHT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; SOT23; single diode; 100nA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; SOT23; single diode; 100nA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C15VLYT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
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