Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102920) > Сторінка 1716 з 1716

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RE1C001ZPTL RE1C001ZPTL ROHM SEMICONDUCTOR datasheet?p=RE1C001ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.1A; Idm: -400mA; 0.15W
Mounting: SMD
Case: SC89
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -0.1A
On-state resistance: 3.8Ω
Type of transistor: P-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -0.4A
на замовлення 1868 шт:
термін постачання 21-30 дні (днів)
25+16.66 грн
41+9.43 грн
50+7.77 грн
100+4.99 грн
404+2.24 грн
1112+2.12 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
RB558WMTL ROHM SEMICONDUCTOR rb558wmtl-e.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC89; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: double series
Mounting: SMD
Case: SC89
Max. off-state voltage: 30V
Kind of package: reel; tape
Max. forward voltage: 0.49V
Load current: 0.1A
Max. forward impulse current: 0.5A
Leakage current: 10µA
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RB706WM-40TL ROHM SEMICONDUCTOR rb706wm-40tl-e.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC89; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: double series
Mounting: SMD
Case: SC89
Max. off-state voltage: 40V
Kind of package: reel; tape
Max. forward voltage: 0.37V
Load current: 30mA
Max. forward impulse current: 0.2A
Leakage current: 0.5µA
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2SAR502EBTL ROHM SEMICONDUCTOR datasheet?p=2SAR502EB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.5A; 200mW; SC89
Mounting: SMD
Case: SC89
Kind of package: reel; tape
Collector-emitter voltage: 30V
Current gain: 200...500
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Frequency: 520MHz
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DAN217WMTL ROHM SEMICONDUCTOR datasheet?p=DAN217WM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Semiconductor structure: double series
Mounting: SMD
Case: SC89
Max. off-state voltage: 80V
Kind of package: reel; tape
Power dissipation: 0.15W
Max. load current: 0.3A
Max. forward voltage: 1.2V
Load current: 0.1A
Reverse recovery time: 4ns
Max. forward impulse current: 4A
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DAN222WMFHTL ROHM SEMICONDUCTOR dan222wmfhtl-e.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 80V
Kind of package: reel; tape
Power dissipation: 0.15W
Max. load current: 0.3A
Max. forward voltage: 1.2V
Load current: 0.1A
Reverse recovery time: 4ns
Max. forward impulse current: 4A
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DAN222WMTL ROHM SEMICONDUCTOR datasheet?p=DAN222WM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 80V
Kind of package: reel; tape
Power dissipation: 0.15W
Max. load current: 0.3A
Max. forward voltage: 1.2V
Load current: 0.1A
Reverse recovery time: 4ns
Max. forward impulse current: 4A
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DAP222WMTL ROHM SEMICONDUCTOR datasheet?p=DAP222WM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 80V
Kind of package: reel; tape
Power dissipation: 0.15W
Max. load current: 0.3A
Max. forward voltage: 1.2V
Load current: 0.1A
Reverse recovery time: 4ns
Max. forward impulse current: 4A
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DTC143ZEBTL ROHM SEMICONDUCTOR datasheet?p=DTC143ZEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Mounting: SMD
Case: SC89
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
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DTC043ZEBTL ROHM SEMICONDUCTOR datasheet?p=DTC043ZEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Mounting: SMD
Case: SC89
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
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DTC023EEBTL ROHM SEMICONDUCTOR datasheet?p=DTC023EEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 2.2kΩ
Mounting: SMD
Case: SC89
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 20
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Frequency: 250MHz
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RB558VYM150FHTR ROHM SEMICONDUCTOR RB558VYM150FH.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 150V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Leakage current: 0.5µA
Max. forward impulse current: 3A
Kind of package: reel; tape
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RB168VYM150FHTR ROHM SEMICONDUCTOR datasheet?p=RB168VYM150FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.89V
Leakage current: 1µA
Max. forward impulse current: 5A
Kind of package: reel; tape
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RHP020N06FRAT100 RHP020N06FRAT100 ROHM SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 758 шт:
термін постачання 21-30 дні (днів)
17+24.98 грн
18+22.04 грн
50+19.56 грн
51+18.02 грн
139+17.01 грн
Мінімальне замовлення: 17
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RHP020N06T100 ROHM SEMICONDUCTOR datasheet?p=RHP020N06&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSR020N06HZGTL ROHM SEMICONDUCTOR rsr020n06hzgtl-e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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RJP020N06FRAT100 ROHM SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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RJP020N06T100 ROHM SEMICONDUCTOR datasheet?p=RJP020N06&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSR020N06FRATL ROHM SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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RRH050P03GZETB RRH050P03GZETB ROHM SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD92C4172DA578A0D3&compId=rrh050p03.pdf?ci_sign=45dbc6970629bc8b4c6d4bdef38ac9a6639c1320 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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RE1C001ZPTL datasheet?p=RE1C001ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RE1C001ZPTL
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.1A; Idm: -400mA; 0.15W
Mounting: SMD
Case: SC89
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -0.1A
On-state resistance: 3.8Ω
Type of transistor: P-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -0.4A
на замовлення 1868 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+16.66 грн
41+9.43 грн
50+7.77 грн
100+4.99 грн
404+2.24 грн
1112+2.12 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
RB558WMTL rb558wmtl-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC89; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: double series
Mounting: SMD
Case: SC89
Max. off-state voltage: 30V
Kind of package: reel; tape
Max. forward voltage: 0.49V
Load current: 0.1A
Max. forward impulse current: 0.5A
Leakage current: 10µA
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RB706WM-40TL rb706wm-40tl-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC89; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: double series
Mounting: SMD
Case: SC89
Max. off-state voltage: 40V
Kind of package: reel; tape
Max. forward voltage: 0.37V
Load current: 30mA
Max. forward impulse current: 0.2A
Leakage current: 0.5µA
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2SAR502EBTL datasheet?p=2SAR502EB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.5A; 200mW; SC89
Mounting: SMD
Case: SC89
Kind of package: reel; tape
Collector-emitter voltage: 30V
Current gain: 200...500
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Frequency: 520MHz
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DAN217WMTL datasheet?p=DAN217WM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Semiconductor structure: double series
Mounting: SMD
Case: SC89
Max. off-state voltage: 80V
Kind of package: reel; tape
Power dissipation: 0.15W
Max. load current: 0.3A
Max. forward voltage: 1.2V
Load current: 0.1A
Reverse recovery time: 4ns
Max. forward impulse current: 4A
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DAN222WMFHTL dan222wmfhtl-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 80V
Kind of package: reel; tape
Power dissipation: 0.15W
Max. load current: 0.3A
Max. forward voltage: 1.2V
Load current: 0.1A
Reverse recovery time: 4ns
Max. forward impulse current: 4A
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DAN222WMTL datasheet?p=DAN222WM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 80V
Kind of package: reel; tape
Power dissipation: 0.15W
Max. load current: 0.3A
Max. forward voltage: 1.2V
Load current: 0.1A
Reverse recovery time: 4ns
Max. forward impulse current: 4A
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DAP222WMTL datasheet?p=DAP222WM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 80V
Kind of package: reel; tape
Power dissipation: 0.15W
Max. load current: 0.3A
Max. forward voltage: 1.2V
Load current: 0.1A
Reverse recovery time: 4ns
Max. forward impulse current: 4A
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DTC143ZEBTL datasheet?p=DTC143ZEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Mounting: SMD
Case: SC89
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
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DTC043ZEBTL datasheet?p=DTC043ZEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Mounting: SMD
Case: SC89
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
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DTC023EEBTL datasheet?p=DTC023EEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 2.2kΩ
Mounting: SMD
Case: SC89
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 20
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Frequency: 250MHz
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RB558VYM150FHTR RB558VYM150FH.pdf
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 150V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Leakage current: 0.5µA
Max. forward impulse current: 3A
Kind of package: reel; tape
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RB168VYM150FHTR datasheet?p=RB168VYM150FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.89V
Leakage current: 1µA
Max. forward impulse current: 5A
Kind of package: reel; tape
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RHP020N06FRAT100
RHP020N06FRAT100
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 758 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+24.98 грн
18+22.04 грн
50+19.56 грн
51+18.02 грн
139+17.01 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
RHP020N06T100 datasheet?p=RHP020N06&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSR020N06HZGTL rsr020n06hzgtl-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
RJP020N06FRAT100
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
RJP020N06T100 datasheet?p=RJP020N06&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
RSR020N06FRATL
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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RRH050P03GZETB pVersion=0046&contRep=ZT&docId=005056AB281E1EDD92C4172DA578A0D3&compId=rrh050p03.pdf?ci_sign=45dbc6970629bc8b4c6d4bdef38ac9a6639c1320
RRH050P03GZETB
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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