Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102047) > Сторінка 805 з 1701
| Фото | Назва | Виробник | Інформація |
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R6030JNZC8 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 30A TO3PF Packaging: Bulk Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V Power Dissipation (Max): 93W (Tc) Vgs(th) (Max) @ Id: 7V @ 5.5mA Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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R6004JNJGTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 4A LPTSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 7V @ 450µA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R6006JNJGTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 6A LPTSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 7V @ 800µA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R6007JNJGTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 7A LPTS |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R6009JNJGTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 9A LPTSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 7V @ 1.38mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R6007JND3TL1 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 7A TO252 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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R6009JND3TL1 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 9A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 7V @ 1.38mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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R6007JNXC7G | Rohm Semiconductor |
Description: MOSFET N-CH 600V 7A TO220FM |
на замовлення 2036 шт: термін постачання 21-31 дні (днів) |
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R6009JNXC7G | Rohm Semiconductor |
Description: MOSFET N-CH 600V 9A TO220FMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 7V @ 1.38mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V |
на замовлення 1899 шт: термін постачання 21-31 дні (днів) |
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R6025JNXC7G | Rohm Semiconductor |
Description: MOSFET N-CH 600V 25A TO220FMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 7V @ 4.5mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V |
на замовлення 1961 шт: термін постачання 21-31 дні (днів) |
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R6025JNZ4C13 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 25A TO247GPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 7V @ 4.5mA Supplier Device Package: TO-247G Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V |
на замовлення 597 шт: термін постачання 21-31 дні (днів) |
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R6030JNZ4C13 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 30A TO247GPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 7V @ 5.5mA Supplier Device Package: TO-247G Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
на замовлення 383 шт: термін постачання 21-31 дні (днів) |
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R6004JNJGTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 4A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 7V @ 450µA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V |
на замовлення 993 шт: термін постачання 21-31 дні (днів) |
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R6006JNJGTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 6A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 7V @ 800µA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V |
на замовлення 1098 шт: термін постачання 21-31 дні (днів) |
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R6007JNJGTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 7A LPTS |
на замовлення 1080 шт: термін постачання 21-31 дні (днів) |
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R6009JNJGTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 9A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 7V @ 1.38mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R6009JND3TL1 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 9A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 7V @ 1.38mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BD16950EFV-CE2 | Rohm Semiconductor |
Description: IC GATE DRVR HALF-BRIDG 24HTSSOPPackaging: Tape & Reel (TR) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 5.5V Input Type: Non-Inverting Supplier Device Package: 24-HTSSOP-B Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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BD7F100EFJ-EVK-001 | Rohm Semiconductor |
Description: EVAL BOARD FOR BD7F100Packaging: Box Voltage - Output: 5V Voltage - Input: 24V Current - Output: 1A Frequency - Switching: 400kHz Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: BD7F100 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Isolated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD7F200EFJ-EVK-001 | Rohm Semiconductor |
Description: BD7F200EFJ-EVK-001 EVALUATION BO |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BD7F200EFJ-EVK-002 | Rohm Semiconductor |
Description: BD7F200EFJ-EVK-002 EVALUATION BO |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BD7F200HFN-EVK-001 | Rohm Semiconductor |
Description: BD7F200HFN-EVK-001 EVALUATION BO |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BD7F200HFN-EVK-002 | Rohm Semiconductor |
Description: EVAL BOARD FOR BD7F200Packaging: Box Voltage - Output: 5V Voltage - Input: 24V Current - Output: 2A Frequency - Switching: 400kHz Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: BD7F200 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Isolated |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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BA12004DF-ZE2 | Rohm Semiconductor |
Description: IC DARLINGTON ARRAY 7/0 16SOP |
на замовлення 2418 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BA12003DF-ZE2 | Rohm Semiconductor |
Description: IC DARLINGTON ARRAY 7/0 16SOP |
на замовлення 2231 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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LM339F-E2 | Rohm Semiconductor |
Description: IC COMPARATOR 4 GEN PUR 14SOPPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.173", 4.40mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 4 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V Supplier Device Package: 14-SOP Current - Quiescent (Max): 2mA Voltage - Input Offset (Max): 4.5mV @ 32V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Active |
на замовлення 5679 шт: термін постачання 21-31 дні (днів) |
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BD16950EFV-CE2 | Rohm Semiconductor |
Description: IC GATE DRVR HALF-BRIDG 24HTSSOPPackaging: Cut Tape (CT) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 5.5V Input Type: Non-Inverting Supplier Device Package: 24-HTSSOP-B Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4788 шт: термін постачання 21-31 дні (днів) |
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BM2SCQ121T-LBZ | Rohm Semiconductor |
Description: IC OFFLINE SWITCH TO220-6MPackaging: Tube Package / Case: TO-220-6 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 105°C Frequency - Switching: 30kHz, 120kHz Internal Switch(s): Yes Voltage - Breakdown: 1700V Output Isolation: Isolated Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Supplier Device Package: TO-220-6M Fault Protection: Over Current, Over Voltage Control Features: Soft Start Power (Watts): 1.5 W |
на замовлення 131 шт: термін постачання 21-31 дні (днів) |
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BM2SCQ122T-LBZ | Rohm Semiconductor |
Description: IC OFFLINE SWITCH TO220-6MPackaging: Tube Package / Case: TO-220-6 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 105°C Frequency - Switching: 30kHz, 120kHz Internal Switch(s): Yes Voltage - Breakdown: 1700V Output Isolation: Isolated Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Supplier Device Package: TO-220-6M Fault Protection: Over Current, Over Voltage Control Features: Soft Start Power (Watts): 1.5 W |
на замовлення 220 шт: термін постачання 21-31 дні (днів) |
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BM2SCQ123T-LBZ | Rohm Semiconductor |
Description: IC OFFLINE SWITCH TO220-6MPackaging: Tube Package / Case: TO-220-6 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 105°C Frequency - Switching: 30kHz, 120kHz Internal Switch(s): Yes Voltage - Breakdown: 1700V Output Isolation: Isolated Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Supplier Device Package: TO-220-6M Fault Protection: Over Current, Over Voltage Control Features: Soft Start Power (Watts): 1.5 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BM2SCQ124T-LBZ | Rohm Semiconductor |
Description: IC OFFLINE SWITCH TO220-6MPackaging: Tube Package / Case: TO-220-6 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 105°C Frequency - Switching: 30kHz, 120kHz Internal Switch(s): Yes Voltage - Breakdown: 1700V Output Isolation: Isolated Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Supplier Device Package: TO-220-6M Fault Protection: Over Current, Over Voltage Control Features: Soft Start Power (Watts): 1.5 W |
на замовлення 223 шт: термін постачання 21-31 дні (днів) |
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BSS64AT116 | Rohm Semiconductor |
Description: TRANS NPN 100V 0.1A SST3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 140MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS63AT116 | Rohm Semiconductor |
Description: TRANS PNP 100V 0.1A SST3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SST3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS5130AT116 | Rohm Semiconductor |
Description: TRANS PNP 30V 1A SST3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 320MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS4130AT116 | Rohm Semiconductor |
Description: TRANS NPN 30V 1A SST3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 400MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD71837AMWV-E2 | Rohm Semiconductor |
Description: SYSTEM PMIC FOR I.MX 8M FAMILY.Packaging: Tape & Reel (TR) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Applications: General Purpose Current - Supply: 197µA Supplier Device Package: UQFN68CV8080 Part Status: Active |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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BD71837AMWV-E2 | Rohm Semiconductor |
Description: SYSTEM PMIC FOR I.MX 8M FAMILY.Packaging: Cut Tape (CT) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Applications: General Purpose Current - Supply: 197µA Supplier Device Package: UQFN68CV8080 Part Status: Active |
на замовлення 1706 шт: термін постачання 21-31 дні (днів) |
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BSS4130AT116 | Rohm Semiconductor |
Description: TRANS NPN 30V 1A SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 400MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
на замовлення 1148 шт: термін постачання 21-31 дні (днів) |
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BSS5130AT116 | Rohm Semiconductor |
Description: TRANS PNP 30V 1A SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 320MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
на замовлення 196 шт: термін постачання 21-31 дні (днів) |
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BSS63AT116 | Rohm Semiconductor |
Description: TRANS PNP 100V 0.1A SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SST3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 200 mW |
на замовлення 2307 шт: термін постачання 21-31 дні (днів) |
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BSS64AT116 | Rohm Semiconductor |
Description: TRANS NPN 100V 0.1A SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 140MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CSL0901DT1 | Rohm Semiconductor |
Description: LED ORANGE CLEAR 0603 SMDPackaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Orange Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 400mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 605nm Supplier Device Package: 0603 Lens Transparency: Clear Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CSL0901MT | Rohm Semiconductor |
Description: HIGH BRIGHTNESS LENS TYPE LED; CPackaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Yellow-Green Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 100mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 571nm Supplier Device Package: 0603 Lens Transparency: Clear Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CSL0901PT | Rohm Semiconductor | Description: HIGH BRIGHTNESS LENS TYPE LED; C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CSL0901UT | Rohm Semiconductor |
Description: HIGH BRIGHTNESS LENS TYPE LED; CPackaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Red Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 280mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 620nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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CSL0901VT | Rohm Semiconductor |
Description: HIGH BRIGHTNESS LENS TYPE LED; CPackaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Red Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 180mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 630nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CSL0901WT | Rohm Semiconductor |
Description: HIGH BRIGHTNESS LENS TYPE LED; C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CSL0901YT | Rohm Semiconductor |
Description: HIGH BRIGHTNESS LENS TYPE LED; CPackaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 320mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 590nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CSL0901DT1 | Rohm Semiconductor |
Description: LED ORANGE CLEAR 0603 SMDPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Orange Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 400mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 605nm Supplier Device Package: 0603 Lens Transparency: Clear Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
на замовлення 103 шт: термін постачання 21-31 дні (днів) |
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CSL0901MT | Rohm Semiconductor |
Description: HIGH BRIGHTNESS LENS TYPE LED; CPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Yellow-Green Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 100mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 571nm Supplier Device Package: 0603 Lens Transparency: Clear Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
на замовлення 774 шт: термін постачання 21-31 дні (днів) |
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CSL0901PT | Rohm Semiconductor | Description: HIGH BRIGHTNESS LENS TYPE LED; C |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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CSL0901UT | Rohm Semiconductor |
Description: HIGH BRIGHTNESS LENS TYPE LED; CPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Red Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 280mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 620nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
на замовлення 3708 шт: термін постачання 21-31 дні (днів) |
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CSL0901VT | Rohm Semiconductor |
Description: HIGH BRIGHTNESS LENS TYPE LED; CPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Red Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 180mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 630nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
на замовлення 1067 шт: термін постачання 21-31 дні (днів) |
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| CSL0901WT | Rohm Semiconductor |
Description: HIGH BRIGHTNESS LENS TYPE LED; C |
на замовлення 1366 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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CSL0901YT | Rohm Semiconductor |
Description: HIGH BRIGHTNESS LENS TYPE LED; CPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 320mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 590nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RGCL60TS60DGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 600V 48A TO-247NPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/186ns Switching Energy: 770µJ (on), 1.11mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 68 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 111 W |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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RGCL60TS60GC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 600V 48A TO-247NPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/186ns Switching Energy: 770µJ (on), 1.11mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 68 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 111 W |
на замовлення 362 шт: термін постачання 21-31 дні (днів) |
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RGCL80TS60DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 600V 65A TO247NPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53ns/227ns Switching Energy: 1.11mJ (on), 1.68mJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 98 nC Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 148 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RGCL80TS60GC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 600V 65A TO-247NPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53ns/227ns Switching Energy: 1.11mJ (on), 1.68mJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 98 nC Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 148 W |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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RB085T-90NZC9 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 90V 10A TO220FNPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V |
на замовлення 87 шт: термін постачання 21-31 дні (днів) |
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| R6030JNZC8 |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 755.37 грн |
| 10+ | 501.55 грн |
| R6004JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
Description: MOSFET N-CH 600V 4A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| R6006JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 6A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
Description: MOSFET N-CH 600V 6A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| R6007JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A LPTS
Description: MOSFET N-CH 600V 7A LPTS
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 113.80 грн |
| R6009JNJGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 112.76 грн |
| R6007JND3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A TO252
Description: MOSFET N-CH 600V 7A TO252
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| R6009JND3TL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
Description: MOSFET N-CH 600V 9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 100.80 грн |
| R6007JNXC7G |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A TO220FM
Description: MOSFET N-CH 600V 7A TO220FM
на замовлення 2036 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 240.15 грн |
| 10+ | 207.31 грн |
| 100+ | 169.88 грн |
| 500+ | 135.72 грн |
| 1000+ | 114.46 грн |
| 2000+ | 108.74 грн |
| R6009JNXC7G |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
Description: MOSFET N-CH 600V 9A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
на замовлення 1899 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.01 грн |
| 50+ | 66.54 грн |
| 100+ | 54.75 грн |
| 500+ | 46.39 грн |
| R6025JNXC7G |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 25A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 7V @ 4.5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
Description: MOSFET N-CH 600V 25A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 7V @ 4.5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
на замовлення 1961 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 497.33 грн |
| 50+ | 258.22 грн |
| 100+ | 236.95 грн |
| 500+ | 221.39 грн |
| R6025JNZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 25A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 7V @ 4.5mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
Description: MOSFET N-CH 600V 25A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 7V @ 4.5mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
на замовлення 597 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 805.61 грн |
| 30+ | 460.00 грн |
| 120+ | 390.70 грн |
| 510+ | 337.72 грн |
| R6030JNZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Description: MOSFET N-CH 600V 30A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
на замовлення 383 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 805.61 грн |
| 30+ | 462.46 грн |
| 120+ | 393.76 грн |
| R6004JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
Description: MOSFET N-CH 600V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
на замовлення 993 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 118.37 грн |
| 10+ | 94.80 грн |
| 100+ | 75.46 грн |
| 500+ | 63.94 грн |
| R6006JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 6A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
Description: MOSFET N-CH 600V 6A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
на замовлення 1098 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 272.51 грн |
| 10+ | 171.31 грн |
| 100+ | 119.18 грн |
| 500+ | 90.94 грн |
| R6007JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A LPTS
Description: MOSFET N-CH 600V 7A LPTS
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 231.63 грн |
| 10+ | 200.26 грн |
| 100+ | 160.98 грн |
| 500+ | 124.12 грн |
| R6009JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 218.01 грн |
| 10+ | 176.39 грн |
| 100+ | 142.67 грн |
| 500+ | 119.01 грн |
| R6009JND3TL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
Description: MOSFET N-CH 600V 9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 220.56 грн |
| 10+ | 190.50 грн |
| 100+ | 153.15 грн |
| 500+ | 118.08 грн |
| 1000+ | 97.84 грн |
| BD16950EFV-CE2 |
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Виробник: Rohm Semiconductor
Description: IC GATE DRVR HALF-BRIDG 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 5.5V
Input Type: Non-Inverting
Supplier Device Package: 24-HTSSOP-B
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR HALF-BRIDG 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 5.5V
Input Type: Non-Inverting
Supplier Device Package: 24-HTSSOP-B
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 235.46 грн |
| BD7F100EFJ-EVK-001 |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BD7F100
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 24V
Current - Output: 1A
Frequency - Switching: 400kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: BD7F100
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Isolated
Description: EVAL BOARD FOR BD7F100
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 24V
Current - Output: 1A
Frequency - Switching: 400kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: BD7F100
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Isolated
товару немає в наявності
В кошику
од. на суму грн.
| BD7F200EFJ-EVK-001 |
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Виробник: Rohm Semiconductor
Description: BD7F200EFJ-EVK-001 EVALUATION BO
Description: BD7F200EFJ-EVK-001 EVALUATION BO
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BD7F200EFJ-EVK-002 |
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Виробник: Rohm Semiconductor
Description: BD7F200EFJ-EVK-002 EVALUATION BO
Description: BD7F200EFJ-EVK-002 EVALUATION BO
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BD7F200HFN-EVK-001 |
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Виробник: Rohm Semiconductor
Description: BD7F200HFN-EVK-001 EVALUATION BO
Description: BD7F200HFN-EVK-001 EVALUATION BO
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BD7F200HFN-EVK-002 |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BD7F200
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 24V
Current - Output: 2A
Frequency - Switching: 400kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: BD7F200
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Isolated
Description: EVAL BOARD FOR BD7F200
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 24V
Current - Output: 2A
Frequency - Switching: 400kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: BD7F200
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Isolated
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9005.66 грн |
| BA12004DF-ZE2 |
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Виробник: Rohm Semiconductor
Description: IC DARLINGTON ARRAY 7/0 16SOP
Description: IC DARLINGTON ARRAY 7/0 16SOP
на замовлення 2418 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BA12003DF-ZE2 |
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Виробник: Rohm Semiconductor
Description: IC DARLINGTON ARRAY 7/0 16SOP
Description: IC DARLINGTON ARRAY 7/0 16SOP
на замовлення 2231 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| LM339F-E2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 32V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 32V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 5679 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 63.87 грн |
| 10+ | 44.04 грн |
| 25+ | 39.66 грн |
| 100+ | 32.72 грн |
| 250+ | 30.57 грн |
| 500+ | 29.28 грн |
| 1000+ | 27.75 грн |
| BD16950EFV-CE2 |
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Виробник: Rohm Semiconductor
Description: IC GATE DRVR HALF-BRIDG 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 5.5V
Input Type: Non-Inverting
Supplier Device Package: 24-HTSSOP-B
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR HALF-BRIDG 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 5.5V
Input Type: Non-Inverting
Supplier Device Package: 24-HTSSOP-B
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4788 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 450.50 грн |
| 10+ | 332.37 грн |
| 25+ | 307.19 грн |
| 100+ | 262.28 грн |
| 250+ | 249.88 грн |
| 500+ | 242.41 грн |
| 1000+ | 232.39 грн |
| BM2SCQ121T-LBZ |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
на замовлення 131 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1239.08 грн |
| 10+ | 832.20 грн |
| 34+ | 711.11 грн |
| 102+ | 591.61 грн |
| BM2SCQ122T-LBZ |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
на замовлення 220 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1239.08 грн |
| 10+ | 832.20 грн |
| 34+ | 711.11 грн |
| 102+ | 591.61 грн |
| BM2SCQ123T-LBZ |
![]() |
Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
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В кошику
од. на суму грн.
| BM2SCQ124T-LBZ |
![]() |
Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
на замовлення 223 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1239.08 грн |
| 10+ | 832.20 грн |
| 34+ | 711.11 грн |
| 102+ | 591.61 грн |
| BSS64AT116 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Description: TRANS NPN 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
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| BSS63AT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Description: TRANS PNP 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
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од. на суму грн.
| BSS5130AT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS PNP 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
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од. на суму грн.
| BSS4130AT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS NPN 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
товару немає в наявності
В кошику
од. на суму грн.
| BD71837AMWV-E2 |
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Виробник: Rohm Semiconductor
Description: SYSTEM PMIC FOR I.MX 8M FAMILY.
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Current - Supply: 197µA
Supplier Device Package: UQFN68CV8080
Part Status: Active
Description: SYSTEM PMIC FOR I.MX 8M FAMILY.
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Current - Supply: 197µA
Supplier Device Package: UQFN68CV8080
Part Status: Active
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 278.85 грн |
| BD71837AMWV-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: SYSTEM PMIC FOR I.MX 8M FAMILY.
Packaging: Cut Tape (CT)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Current - Supply: 197µA
Supplier Device Package: UQFN68CV8080
Part Status: Active
Description: SYSTEM PMIC FOR I.MX 8M FAMILY.
Packaging: Cut Tape (CT)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Current - Supply: 197µA
Supplier Device Package: UQFN68CV8080
Part Status: Active
на замовлення 1706 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 477.75 грн |
| 10+ | 353.61 грн |
| 25+ | 326.97 грн |
| 100+ | 279.43 грн |
| 250+ | 266.36 грн |
| 500+ | 258.48 грн |
| BSS4130AT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS NPN 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 1148 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 41.73 грн |
| 14+ | 24.68 грн |
| 100+ | 15.73 грн |
| 500+ | 11.14 грн |
| 1000+ | 9.96 грн |
| BSS5130AT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS PNP 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 196 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.06 грн |
| 13+ | 25.42 грн |
| 100+ | 15.28 грн |
| BSS63AT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PNP 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Description: TRANS PNP 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
на замовлення 2307 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.25 грн |
| 18+ | 18.37 грн |
| 100+ | 9.30 грн |
| 500+ | 7.12 грн |
| 1000+ | 5.28 грн |
| BSS64AT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Description: TRANS NPN 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
товару немає в наявності
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| CSL0901DT1 |
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Виробник: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 400mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 400mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
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| CSL0901MT |
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Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow-Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 571nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow-Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 571nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
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| CSL0901PT |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
товару немає в наявності
В кошику
од. на суму грн.
| CSL0901UT |
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Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 280mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 280mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 11.64 грн |
| CSL0901VT |
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Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 180mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 180mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
товару немає в наявності
В кошику
од. на суму грн.
| CSL0901WT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
товару немає в наявності
В кошику
од. на суму грн.
| CSL0901YT |
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Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 320mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 590nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 320mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 590nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
товару немає в наявності
В кошику
од. на суму грн.
| CSL0901DT1 |
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Виробник: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 400mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 400mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
на замовлення 103 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 33.21 грн |
| 15+ | 22.06 грн |
| 100+ | 15.76 грн |
| CSL0901MT |
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Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow-Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 571nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow-Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 571nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
на замовлення 774 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.06 грн |
| 15+ | 22.47 грн |
| 100+ | 16.05 грн |
| 500+ | 12.36 грн |
| CSL0901PT |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
на замовлення 3 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| CSL0901UT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 280mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 280mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
на замовлення 3708 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 33.21 грн |
| 15+ | 22.06 грн |
| 100+ | 15.76 грн |
| 500+ | 12.14 грн |
| 1000+ | 11.26 грн |
| CSL0901VT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 180mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 180mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
на замовлення 1067 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.39 грн |
| 12+ | 29.36 грн |
| 100+ | 16.90 грн |
| 1000+ | 12.41 грн |
| CSL0901WT |
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Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
на замовлення 1366 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| CSL0901YT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 320mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 590nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 320mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 590nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
на замовлення 7 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RGCL60TS60DGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 600V 48A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
Description: IGBT TRENCH FS 600V 48A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
на замовлення 34 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 410.47 грн |
| 10+ | 263.81 грн |
| RGCL60TS60GC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 600V 48A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
Description: IGBT TRENCH FS 600V 48A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
на замовлення 362 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 372.15 грн |
| 10+ | 238.23 грн |
| RGCL80TS60DGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 600V 65A TO247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/227ns
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 148 W
Description: IGBT TRNCH FIELD 600V 65A TO247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/227ns
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 148 W
товару немає в наявності
В кошику
од. на суму грн.
| RGCL80TS60GC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 600V 65A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/227ns
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 148 W
Description: IGBT TRENCH FS 600V 65A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/227ns
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 148 W
на замовлення 400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 207.79 грн |
| 10+ | 129.73 грн |
| RB085T-90NZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 90V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Description: DIODE ARR SCHOTT 90V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
на замовлення 87 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 122.63 грн |
| 50+ | 50.12 грн |

























