Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102567) > Сторінка 917 з 1710
Фото | Назва | Виробник | Інформація |
Доступність |
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SDR10EZPF1200 | Rohm Semiconductor |
![]() Power (Watts): 0.5W, 1/2W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 120 Ohms |
на замовлення 14990 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPF1200 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPF1200 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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UFZVTE-175.6B | Rohm Semiconductor |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SB1412TLQ | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: CPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 10 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SFR18EZPJ000 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Tolerance: Jumper Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 1206 (3216 Metric) Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 0 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SFR18EZPJ000 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Tolerance: Jumper Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 1206 (3216 Metric) Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 0 Ohms |
на замовлення 4932 шт: термін постачання 21-31 дні (днів) |
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BR25H128FJ-5ACE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Write Cycle Time - Word, Page: 3.5ms Memory Interface: SPI Memory Organization: 16K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR25H128FJ-5ACE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Write Cycle Time - Word, Page: 3.5ms Memory Interface: SPI Memory Organization: 16K x 8 DigiKey Programmable: Not Verified |
на замовлення 2561 шт: термін постачання 21-31 дні (днів) |
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BR25H128F-2LBH2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Memory Organization: 16K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR25H128F-2LBH2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Memory Organization: 16K x 8 DigiKey Programmable: Not Verified |
на замовлення 242 шт: термін постачання 21-31 дні (днів) |
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BR24H128F-5ACE2 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR24H128FJ-5ACE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Grade: Automotive Write Cycle Time - Word, Page: 3.5ms Memory Interface: I2C Memory Organization: 16K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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BR24H128FJ-5ACE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Grade: Automotive Write Cycle Time - Word, Page: 3.5ms Memory Interface: I2C Memory Organization: 16K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 8700 шт: термін постачання 21-31 дні (днів) |
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BR24H128FVM-5ACTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Grade: Automotive Write Cycle Time - Word, Page: 3.5ms Memory Interface: I2C Memory Organization: 16K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BR24H128FVM-5ACTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Grade: Automotive Write Cycle Time - Word, Page: 3.5ms Memory Interface: I2C Memory Organization: 16K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 6117 шт: термін постачання 21-31 дні (днів) |
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BR35H128F-WCE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 16K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BR35H128F-WCE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 16K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR35H128FJ-WCE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 16K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BR35H128FJ-WCE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 16K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTA043XUBTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: UMT3F Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DTA043XUBTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: UMT3F Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DTA044TMT2L | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTA044TEBTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 60 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA143ZEFRATL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTA143ZEFRATL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 2943 шт: термін постачання 21-31 дні (днів) |
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RN731VFHTE-17 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RN731VFHTE-17 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD7694FJ-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 10V ~ 38V Mode: Continuous Conduction (CCM) Supplier Device Package: 8-SOP-J Part Status: Active Current - Startup: 100 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD7694FJ-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 10V ~ 38V Mode: Continuous Conduction (CCM) Supplier Device Package: 8-SOP-J Part Status: Active Current - Startup: 100 µA |
на замовлення 2495 шт: термін постачання 21-31 дні (днів) |
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SMLA12ENTT86 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Color: Green Size / Dimension: 1.60mm L x 1.15mm W Mounting Type: Surface Mount, Right Angle Millicandela Rating: 140mcd Voltage - Forward (Vf) (Typ): 3V Current - Test: 5mA Height (Max): 0.65mm Wavelength - Dominant: 527nm Supplier Device Package: 1611(0605) Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.55mm |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SMLA12ENTT86 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Color: Green Size / Dimension: 1.60mm L x 1.15mm W Mounting Type: Surface Mount, Right Angle Millicandela Rating: 140mcd Voltage - Forward (Vf) (Typ): 3V Current - Test: 5mA Height (Max): 0.65mm Wavelength - Dominant: 527nm Supplier Device Package: 1611(0605) Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.55mm |
на замовлення 8211 шт: термін постачання 21-31 дні (днів) |
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SP8M21HZGTB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SP8M21HZGTB | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
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SP8M41HZGTB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SP8M41HZGTB | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1882 шт: термін постачання 21-31 дні (днів) |
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SP8M51HZGTB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SP8M51HZGTB | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 989 шт: термін постачання 21-31 дні (днів) |
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SP8M24HZGTB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SH8M4TB1 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RR274EA-400FHTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 500mA Supplier Device Package: TSMD5 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SCS230AE2GC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A (DC) Supplier Device Package: TO-247N Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Current - Reverse Leakage @ Vr: 300 µA @ 600 V |
на замовлення 316 шт: термін постачання 21-31 дні (днів) |
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SCS220AGC17 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 600 V |
на замовлення 690 шт: термін постачання 21-31 дні (днів) |
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SCS212AGC17 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 438pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A Current - Reverse Leakage @ Vr: 240 µA @ 600 V |
на замовлення 955 шт: термін постачання 21-31 дні (днів) |
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SCS220KGC17 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1050pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 1200 V |
на замовлення 991 шт: термін постачання 21-31 дні (днів) |
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SCS220KE2GC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A (DC) Supplier Device Package: TO-247N Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 756 шт: термін постачання 21-31 дні (днів) |
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SCS230KE2GC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A (DC) Supplier Device Package: TO-247N Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 300 µA @ 1200 V |
на замовлення 344 шт: термін постачання 21-31 дні (днів) |
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SCS220AE2GC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A (DC) Supplier Device Package: TO-247N Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
на замовлення 363 шт: термін постачання 21-31 дні (днів) |
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SCS220AEGC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 600 V |
на замовлення 345 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD4223 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD4223 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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LTR100LJZPFSR062 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 62 MOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LTR100LJZPFSR062 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 62 MOhms |
на замовлення 3785 шт: термін постачання 21-31 дні (днів) |
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LTR100LJZPFSR039 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +200ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 39 mOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LTR100LJZPFSR039 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +200ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 39 mOhms |
на замовлення 3966 шт: термін постачання 21-31 дні (днів) |
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LTR100LJZPFSR056 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Resistance: 56 mOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LTR100LJZPFSR056 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Resistance: 56 mOhms |
на замовлення 3960 шт: термін постачання 21-31 дні (днів) |
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LTR100LJZPFSR082 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 82 mOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LTR100LJZPFSR082 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 82 mOhms |
на замовлення 2853 шт: термін постачання 21-31 дні (днів) |
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LTR100LJZPFSR027 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +200ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Resistance: 27 mOhms |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPF1200 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 120 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 120 Ohms
на замовлення 14990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 23.02 грн |
17+ | 18.73 грн |
100+ | 7.33 грн |
1000+ | 2.88 грн |
2500+ | 2.64 грн |
SDR03EZPF1200 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 1.38 грн |
10000+ | 1.24 грн |
SDR03EZPF1200 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
27+ | 11.91 грн |
32+ | 9.71 грн |
100+ | 3.79 грн |
1000+ | 1.49 грн |
2500+ | 1.37 грн |
UFZVTE-175.6B |
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Виробник: Rohm Semiconductor
Description: 500MW 5.6V, SOD-323FL, SMALL AND
Description: 500MW 5.6V, SOD-323FL, SMALL AND
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 6.20 грн |
2SB1412TLQ |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 20V 5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: CPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 10 W
Description: TRANS PNP 20V 5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: CPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 10 W
товару немає в наявності
В кошику
од. на суму грн.
SFR18EZPJ000 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Packaging: Tape & Reel (TR)
Tolerance: Jumper
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 0 Ohms
Description: SULFUR TOLERANT CHIP RESISTORS :
Packaging: Tape & Reel (TR)
Tolerance: Jumper
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 0 Ohms
товару немає в наявності
В кошику
од. на суму грн.
SFR18EZPJ000 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Packaging: Cut Tape (CT)
Tolerance: Jumper
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 0 Ohms
Description: SULFUR TOLERANT CHIP RESISTORS :
Packaging: Cut Tape (CT)
Tolerance: Jumper
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 0 Ohms
на замовлення 4932 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 13.50 грн |
48+ | 6.50 грн |
71+ | 4.36 грн |
100+ | 3.49 грн |
500+ | 2.51 грн |
1000+ | 2.21 грн |
BR25H128FJ-5ACE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
BR25H128FJ-5ACE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
на замовлення 2561 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 88.12 грн |
10+ | 77.44 грн |
25+ | 75.32 грн |
50+ | 70.34 грн |
100+ | 62.88 грн |
250+ | 62.70 грн |
500+ | 60.74 грн |
1000+ | 58.16 грн |
BR25H128F-2LBH2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
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BR25H128F-2LBH2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
на замовлення 242 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 155.60 грн |
10+ | 140.36 грн |
25+ | 136.32 грн |
50+ | 125.06 грн |
100+ | 122.17 грн |
BR24H128F-5ACE2 |
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Виробник: Rohm Semiconductor
Description: 125 OPERATION IC BUS EEPROM FOR
Description: 125 OPERATION IC BUS EEPROM FOR
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BR24H128FJ-5ACE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 38.75 грн |
BR24H128FJ-5ACE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 8700 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 49.22 грн |
10+ | 42.81 грн |
25+ | 42.29 грн |
50+ | 39.46 грн |
100+ | 35.28 грн |
250+ | 35.01 грн |
BR24H128FVM-5ACTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 50.72 грн |
BR24H128FVM-5ACTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 6117 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 71.45 грн |
10+ | 62.76 грн |
25+ | 61.98 грн |
50+ | 57.81 грн |
100+ | 51.70 грн |
250+ | 51.26 грн |
500+ | 49.67 грн |
1000+ | 47.90 грн |
BR35H128F-WCE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 131.99 грн |
BR35H128F-WCE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128FJ-WCE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 82.85 грн |
BR35H128FJ-WCE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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DTA043XUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.62 грн |
6000+ | 3.12 грн |
DTA043XUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
19+ | 17.47 грн |
30+ | 10.47 грн |
100+ | 6.50 грн |
500+ | 4.47 грн |
1000+ | 3.94 грн |
DTA044TMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V VMT3
Description: TRANS PREBIAS PNP 50V VMT3
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DTA044TEBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS PNP 50V EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.37 грн |
DTA143ZEFRATL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
DTA143ZEFRATL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 2943 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
23+ | 14.29 грн |
38+ | 8.26 грн |
100+ | 5.13 грн |
500+ | 3.51 грн |
1000+ | 3.09 грн |
RN731VFHTE-17 |
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Виробник: Rohm Semiconductor
Description: RF DIODE PIN 50V UMD2
Description: RF DIODE PIN 50V UMD2
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од. на суму грн.
RN731VFHTE-17 |
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Виробник: Rohm Semiconductor
Description: RF DIODE PIN 50V UMD2
Description: RF DIODE PIN 50V UMD2
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од. на суму грн.
BD7694FJ-E2 |
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Виробник: Rohm Semiconductor
Description: POWER FACTOR CORRECTION CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10V ~ 38V
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOP-J
Part Status: Active
Current - Startup: 100 µA
Description: POWER FACTOR CORRECTION CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10V ~ 38V
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOP-J
Part Status: Active
Current - Startup: 100 µA
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BD7694FJ-E2 |
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Виробник: Rohm Semiconductor
Description: POWER FACTOR CORRECTION CONTROLL
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10V ~ 38V
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOP-J
Part Status: Active
Current - Startup: 100 µA
Description: POWER FACTOR CORRECTION CONTROLL
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10V ~ 38V
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOP-J
Part Status: Active
Current - Startup: 100 µA
на замовлення 2495 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 122.26 грн |
10+ | 72.93 грн |
25+ | 61.07 грн |
100+ | 44.71 грн |
250+ | 38.52 грн |
500+ | 34.71 грн |
1000+ | 31.00 грн |
SMLA12ENTT86 |
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Виробник: Rohm Semiconductor
Description: LED GREEN 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
Description: LED GREEN 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 29.57 грн |
SMLA12ENTT86 |
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Виробник: Rohm Semiconductor
Description: LED GREEN 1611 SMD R/A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
Description: LED GREEN 1611 SMD R/A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
на замовлення 8211 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 97.65 грн |
10+ | 58.33 грн |
100+ | 40.37 грн |
500+ | 31.26 грн |
1000+ | 29.23 грн |
SP8M21HZGTB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 6A/4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 45V 6A/4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8M21HZGTB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 6A/4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 45V 6A/4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 200.85 грн |
10+ | 160.47 грн |
100+ | 127.72 грн |
500+ | 101.42 грн |
1000+ | 86.05 грн |
SP8M41HZGTB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
SP8M41HZGTB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1882 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 113.53 грн |
10+ | 90.44 грн |
100+ | 71.97 грн |
500+ | 57.15 грн |
1000+ | 48.49 грн |
SP8M51HZGTB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A/2.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET N/P-CH 100V 3A/2.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
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SP8M51HZGTB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A/2.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET N/P-CH 100V 3A/2.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 989 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 115.91 грн |
10+ | 93.11 грн |
100+ | 74.11 грн |
500+ | 58.85 грн |
SP8M24HZGTB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
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SH8M4TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/7A 8SOIC
Description: MOSFET N/P-CH 30V 9A/7A 8SOIC
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RR274EA-400FHTR |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 400V 500MA TSMD5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: TSMD5
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE ARRAY GP 400V 500MA TSMD5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: TSMD5
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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SCS230AE2GC11 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 15A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Description: DIODE ARRAY SIC 650V 15A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
на замовлення 316 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 951.08 грн |
10+ | 638.35 грн |
SCS220AGC17 |
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Виробник: Rohm Semiconductor
Description: DIODE SIC 650V 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Description: DIODE SIC 650V 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
на замовлення 690 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 527.94 грн |
50+ | 279.60 грн |
SCS212AGC17 |
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Виробник: Rohm Semiconductor
Description: DIODE SIC 650V 12A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Description: DIODE SIC 650V 12A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
на замовлення 955 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 508.09 грн |
50+ | 261.41 грн |
100+ | 239.37 грн |
500+ | 188.43 грн |
SCS220KGC17 |
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Виробник: Rohm Semiconductor
Description: DIODE SIC 1.2KV 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Description: DIODE SIC 1.2KV 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
на замовлення 991 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 885.98 грн |
10+ | 599.97 грн |
100+ | 550.94 грн |
SCS220KE2GC11 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SIC 1200V 10A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE ARR SIC 1200V 10A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 756 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1179.72 грн |
30+ | 682.89 грн |
120+ | 602.63 грн |
510+ | 561.14 грн |
SCS230KE2GC11 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SIC 1200V 15A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Description: DIODE ARR SIC 1200V 15A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
на замовлення 344 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1530.62 грн |
10+ | 1056.14 грн |
SCS220AE2GC11 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 10A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: DIODE ARRAY SIC 650V 10A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
на замовлення 363 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 769.28 грн |
10+ | 510.07 грн |
SCS220AEGC11 |
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Виробник: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Description: DIODE SIL CARBIDE 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
на замовлення 345 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 750.23 грн |
10+ | 496.69 грн |
SDR03EZPD4223 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 1.97 грн |
10000+ | 1.78 грн |
SDR03EZPD4223 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 16.67 грн |
22+ | 13.99 грн |
100+ | 5.46 грн |
1000+ | 2.14 грн |
2500+ | 1.96 грн |
LTR100LJZPFSR062 |
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Виробник: Rohm Semiconductor
Description: RES 0.062 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 62 MOhms
Description: RES 0.062 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 62 MOhms
товару немає в наявності
В кошику
од. на суму грн.
LTR100LJZPFSR062 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 0.062 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 62 MOhms
Description: RES 0.062 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 62 MOhms
на замовлення 3785 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 161.16 грн |
10+ | 92.12 грн |
50+ | 67.83 грн |
100+ | 56.55 грн |
500+ | 44.13 грн |
1000+ | 40.32 грн |
LTR100LJZPFSR039 |
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Виробник: Rohm Semiconductor
Description: RES 0.039 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 39 mOhms
Description: RES 0.039 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 39 mOhms
товару немає в наявності
В кошику
од. на суму грн.
LTR100LJZPFSR039 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 0.039 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 39 mOhms
Description: RES 0.039 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 39 mOhms
на замовлення 3966 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 161.16 грн |
10+ | 92.12 грн |
50+ | 67.83 грн |
100+ | 56.55 грн |
500+ | 44.13 грн |
1000+ | 40.32 грн |
LTR100LJZPFSR056 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 0.056 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 56 mOhms
Description: RES 0.056 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 56 mOhms
товару немає в наявності
В кошику
од. на суму грн.
LTR100LJZPFSR056 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 0.056 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 56 mOhms
Description: RES 0.056 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 56 mOhms
на замовлення 3960 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 161.16 грн |
10+ | 92.12 грн |
50+ | 67.83 грн |
100+ | 56.55 грн |
500+ | 44.13 грн |
1000+ | 40.32 грн |
LTR100LJZPFSR082 |
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Виробник: Rohm Semiconductor
Description: HIGH POWER CHIP RESISTOR
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 82 mOhms
Description: HIGH POWER CHIP RESISTOR
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 82 mOhms
товару немає в наявності
В кошику
од. на суму грн.
LTR100LJZPFSR082 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH POWER CHIP RESISTOR
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 82 mOhms
Description: HIGH POWER CHIP RESISTOR
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 82 mOhms
на замовлення 2853 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 111.94 грн |
10+ | 95.18 грн |
100+ | 69.10 грн |
1000+ | 38.33 грн |
LTR100LJZPFSR027 |
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Виробник: Rohm Semiconductor
Description: RES 0.027 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 27 mOhms
Description: RES 0.027 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 27 mOhms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 40.13 грн |