Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (105892) > Сторінка 914 з 1765
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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SDR03EZPD30R0 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPTemperature Coefficient: ±100ppm/°C Package / Case: 0603 (1608 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±0.5% Power (Watts): 0.3W Packaging: Tape & Reel (TR) Resistance: 30 Ohms Height - Seated (Max): 0.022" (0.55mm) Supplier Device Package: 0603 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD30R0 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPNumber of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0603 (1608 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±0.5% Power (Watts): 0.3W Packaging: Cut Tape (CT) Resistance: 30 Ohms Height - Seated (Max): 0.022" (0.55mm) Supplier Device Package: 0603 |
на замовлення 9380 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD3003 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPResistance: 300 kOhms Height - Seated (Max): 0.022" (0.55mm) Supplier Device Package: 0603 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0603 (1608 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±0.5% Power (Watts): 0.3W Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD3003 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPResistance: 300 kOhms Height - Seated (Max): 0.022" (0.55mm) Supplier Device Package: 0603 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0603 (1608 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±0.5% Power (Watts): 0.3W Packaging: Cut Tape (CT) |
на замовлення 8620 шт: термін постачання 21-31 дні (днів) |
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LM2903EYFJ-CE2 | Rohm Semiconductor |
Description: IC COMPARATOR 2 GEN PUR 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Open-Collector, Rail-to-Rail Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: -40°C ~ 150°C Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V Supplier Device Package: 8-SOP-J Current - Quiescent (Max): 1mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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LM2903EYFJ-CE2 | Rohm Semiconductor |
Description: IC COMPARATOR 2 GEN PUR 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Open-Collector, Rail-to-Rail Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: -40°C ~ 150°C Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V Supplier Device Package: 8-SOP-J Current - Quiescent (Max): 1mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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LM2903EYFVM-CTR | Rohm Semiconductor |
Description: IC COMPARATOR 2 GEN PUR 8MSOPPackaging: Tape & Reel (TR) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Open-Collector, TTL Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: -40°C ~ 150°C Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V Supplier Device Package: 8-MSOP Current - Quiescent (Max): 1mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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LM2903EYFVM-CTR | Rohm Semiconductor |
Description: IC COMPARATOR 2 GEN PUR 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Open-Collector, TTL Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: -40°C ~ 150°C Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V Supplier Device Package: 8-MSOP Current - Quiescent (Max): 1mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Active |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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| LTR100JZPF2202 | Rohm Semiconductor |
Description: HIGH POWER CHIP RESISTOR: HIGH-P |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||
| LTR100JZPF2202 | Rohm Semiconductor |
Description: HIGH POWER CHIP RESISTOR: HIGH-P |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML620Q134B-NNNTD07GL | Rohm Semiconductor |
Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML620Q136B-NNNTD07FL | Rohm Semiconductor |
Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML620Q135B-NNNTD07GL | Rohm Semiconductor |
Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML620Q135B-NNNTD07FL | Rohm Semiconductor |
Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML620Q134B-NNNTD07FL | Rohm Semiconductor |
Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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R6504KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 4A LPTSInput Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 130µA Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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R6504KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 4A LPTSInput Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 130µA Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
на замовлення 72 шт: термін постачання 21-31 дні (днів) |
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R6504ENJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 4A LPTSInput Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 4V @ 130µA Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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R6504ENJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 4A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4V @ 130µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V |
на замовлення 92 шт: термін постачання 21-31 дні (днів) |
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R6515KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 15A LPTSInput Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 430µA Power Dissipation (Max): 184W (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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R6515KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 15A LPTSInput Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 430µA Power Dissipation (Max): 184W (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
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R6507KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 7A LPTSPackage / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 200µA Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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R6507KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 7A LPTSRds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V Supplier Device Package: LPTS Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 5V @ 200µA Power Dissipation (Max): 78W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
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R6509ENJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 9A LPTSInput Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 4V @ 230µA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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R6509ENJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 9A LPTSInput Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 4V @ 230µA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 88 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPJ150 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPJ150 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ150 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ150 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 9790 шт: термін постачання 21-31 дні (днів) |
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MNR04MRAPJ150 | Rohm Semiconductor |
Description: RES ARRAY 4 RES 15 OHM 0804Number of Resistors: 4 Height - Seated (Max): 0.020" (0.50mm) Operating Temperature: -55°C ~ 155°C Mounting Type: Surface Mount Size / Dimension: 0.079" L x 0.039" W (2.00mm x 1.00mm) Temperature Coefficient: ±200ppm/°C Package / Case: 0804, Convex, Long Side Terminals Number of Pins: 8 Circuit Type: Isolated Power Per Element: 62.5mW Tolerance: ±5% Resistance (Ohms): 15 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB168VAM-30TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 1A TUMD2M |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RB168VAM-30TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 1A TUMD2M |
на замовлення 695 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPJ2R4 | Rohm Semiconductor |
Description: RES 2.4 OHM 5% 1/2W 0805Resistance: 2.4 Ohms Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 0805 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Temperature Coefficient: ±200ppm/°C Package / Case: 0805 (2012 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±5% Power (Watts): 0.5W, 1/2W Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPJ2R4 | Rohm Semiconductor |
Description: RES 2.4 OHM 5% 1/2W 0805Resistance: 2.4 Ohms Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 0805 Number of Terminations: 2 Tolerance: ±5% Power (Watts): 0.5W, 1/2W Packaging: Cut Tape (CT) Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Temperature Coefficient: ±200ppm/°C Package / Case: 0805 (2012 Metric) Features: Automotive AEC-Q200, Pulse Withstanding |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPJ2R4 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIP |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPJ2R4 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIP |
на замовлення 9900 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ2R4 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ2R4 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 9897 шт: термін постачання 21-31 дні (днів) |
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RBR20T60ANZC9 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 60V 10A TO220FNPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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RBQ10RSM65BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 10A TO277ACurrent - Reverse Leakage @ Vr: 150 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 65 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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RBQ10RSM65BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 10A TO277ACurrent - Reverse Leakage @ Vr: 150 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 65 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 1476 шт: термін постачання 21-31 дні (днів) |
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RBQ10RSM65BTFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 10A TO277AQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 150 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 65 V Grade: Automotive Operating Temperature - Junction: 150°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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RBQ10RSM65BTFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 10A TO277AQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 150 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 65 V Grade: Automotive Operating Temperature - Junction: 150°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 3839 шт: термін постачання 21-31 дні (днів) |
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RBQ5RSM65BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 5A TO277ACurrent - Reverse Leakage @ Vr: 90 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 65 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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RBQ5RSM65BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 5A TO277ACurrent - Reverse Leakage @ Vr: 90 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 65 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 3967 шт: термін постачання 21-31 дні (днів) |
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RBQ3RSM65BTFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 3A TO277ACurrent - Reverse Leakage @ Vr: 90 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 65 V Grade: Automotive Operating Temperature - Junction: 150°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 3A Technology: Schottky Qualification: AEC-Q101 Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RBQ3RSM65BTFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 3A TO277AQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 90 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 65 V Grade: Automotive Operating Temperature - Junction: 150°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RBQ5RSM65BTFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 5A TO277AQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 90 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 65 V Grade: Automotive Operating Temperature - Junction: 150°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RBQ5RSM65BTFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 5A TO277ASpeed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 90 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 65 V Grade: Automotive Operating Temperature - Junction: 150°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 5A Technology: Schottky |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RBQ3RSM65BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 3A TO277AOperating Temperature - Junction: 150°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 90 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 65 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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RBQ3RSM65BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 3A TO277ACurrent - Reverse Leakage @ Vr: 90 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 65 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 3990 шт: термін постачання 21-31 дні (днів) |
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DTC143EE3HZGTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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DTC143EE3HZGTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 2092 шт: термін постачання 21-31 дні (днів) |
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RB706F-40T106 | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 40V 30MA UMD3Current - Reverse Leakage @ Vr: 1 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: UMD3 Current - Average Rectified (Io) (per Diode): 30mA Diode Configuration: 1 Pair Series Connection Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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UMZ30NT106 | Rohm Semiconductor |
Description: ZENER ARRAYS FOR TERMINAL PROTEC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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UMZ30NT106 | Rohm Semiconductor |
Description: ZENER ARRAYS FOR TERMINAL PROTEC |
на замовлення 2995 шт: термін постачання 21-31 дні (днів) |
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DA228UMTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA UMD3FSpeed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: UMD3F Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Series Connection Technology: Standard |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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DA228UMTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA UMD3FCurrent - Reverse Leakage @ Vr: 10 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: UMD3F Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Series Connection Technology: Standard Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Cut Tape (CT) |
на замовлення 2575 шт: термін постачання 21-31 дні (днів) |
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DA204UMTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 20V 100MA UMD3FCurrent - Reverse Leakage @ Vr: 100 nA @ 15 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: UMD3F Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Series Connection Technology: Standard Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Cut Tape (CT) |
на замовлення 72 шт: термін постачання 21-31 дні (днів) |
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RB715UMTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 30MA UMD3FCurrent - Reverse Leakage @ Vr: 1 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: UMD3F Current - Average Rectified (Io) (per Diode): 30mA Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| SDR03EZPD30R0 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Tape & Reel (TR)
Resistance: 30 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Description: HIGH ANTI-SURGE THICK FILM CHIP
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Tape & Reel (TR)
Resistance: 30 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 2.34 грн |
| SDR03EZPD30R0 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Cut Tape (CT)
Resistance: 30 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Description: HIGH ANTI-SURGE THICK FILM CHIP
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Cut Tape (CT)
Resistance: 30 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
на замовлення 9380 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 14.27 грн |
| 41+ | 7.56 грн |
| 60+ | 5.15 грн |
| 100+ | 4.16 грн |
| 500+ | 3.06 грн |
| 1000+ | 2.71 грн |
| SDR03EZPD3003 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 300 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Tape & Reel (TR)
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 300 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 2.34 грн |
| SDR03EZPD3003 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 300 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Cut Tape (CT)
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 300 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Cut Tape (CT)
на замовлення 8620 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 14.27 грн |
| 41+ | 7.56 грн |
| 60+ | 5.15 грн |
| 100+ | 4.16 грн |
| 500+ | 3.06 грн |
| 1000+ | 2.71 грн |
| LM2903EYFJ-CE2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2 GEN PUR 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Collector, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-SOP-J
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 2 GEN PUR 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Collector, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-SOP-J
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 46.05 грн |
| LM2903EYFJ-CE2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2 GEN PUR 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Collector, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-SOP-J
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 2 GEN PUR 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Collector, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-SOP-J
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.63 грн |
| 10+ | 93.46 грн |
| 25+ | 88.70 грн |
| 100+ | 68.38 грн |
| 250+ | 63.92 грн |
| 500+ | 56.48 грн |
| 1000+ | 43.86 грн |
| LM2903EYFVM-CTR |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| LM2903EYFVM-CTR |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.77 грн |
| 10+ | 99.64 грн |
| 25+ | 94.53 грн |
| 100+ | 72.88 грн |
| 250+ | 68.13 грн |
| 500+ | 60.21 грн |
| 1000+ | 46.75 грн |
| LTR100JZPF2202 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH POWER CHIP RESISTOR: HIGH-P
Description: HIGH POWER CHIP RESISTOR: HIGH-P
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| LTR100JZPF2202 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH POWER CHIP RESISTOR: HIGH-P
Description: HIGH POWER CHIP RESISTOR: HIGH-P
товару немає в наявності
В кошику
од. на суму грн.
| ML620Q134B-NNNTD07GL |
![]() |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
товару немає в наявності
В кошику
од. на суму грн.
| ML620Q136B-NNNTD07FL |
![]() |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
товару немає в наявності
В кошику
од. на суму грн.
| ML620Q135B-NNNTD07GL |
![]() |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
товару немає в наявності
В кошику
од. на суму грн.
| ML620Q135B-NNNTD07FL |
![]() |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
товару немає в наявності
В кошику
од. на суму грн.
| ML620Q134B-NNNTD07FL |
![]() |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
товару немає в наявності
В кошику
од. на суму грн.
| R6504KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 4A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 130µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 650V 4A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 130µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| R6504KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 4A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 130µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Description: MOSFET N-CH 650V 4A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 130µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
на замовлення 72 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 165.72 грн |
| 10+ | 132.63 грн |
| R6504ENJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 4A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 650V 4A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| R6504ENJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Description: MOSFET N-CH 650V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
на замовлення 92 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 165.72 грн |
| 10+ | 132.63 грн |
| R6515KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 430µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 650V 15A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 430µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| R6515KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 430µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 650V 15A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 430µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 80 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 472.59 грн |
| 10+ | 305.42 грн |
| R6507KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 7A LPTS
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 200µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 650V 7A LPTS
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 200µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| R6507KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 7A LPTS
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Supplier Device Package: LPTS
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 5V @ 200µA
Power Dissipation (Max): 78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 650V 7A LPTS
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Supplier Device Package: LPTS
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 5V @ 200µA
Power Dissipation (Max): 78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
на замовлення 80 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 313.21 грн |
| 10+ | 198.37 грн |
| R6509ENJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 9A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 650V 9A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| R6509ENJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 9A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 650V 9A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 88 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 237.88 грн |
| 10+ | 192.11 грн |
| SFR01MZPJ150 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 0.84 грн |
| SFR01MZPJ150 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 7.93 грн |
| 44+ | 6.95 грн |
| 116+ | 2.65 грн |
| 1000+ | 1.10 грн |
| 2500+ | 0.95 грн |
| 5000+ | 0.85 грн |
| SFR03EZPJ150 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 0.94 грн |
| SFR03EZPJ150 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 9790 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 7.93 грн |
| 44+ | 6.95 грн |
| 116+ | 2.65 грн |
| 1000+ | 1.10 грн |
| 2500+ | 0.95 грн |
| MNR04MRAPJ150 |
![]() |
Виробник: Rohm Semiconductor
Description: RES ARRAY 4 RES 15 OHM 0804
Number of Resistors: 4
Height - Seated (Max): 0.020" (0.50mm)
Operating Temperature: -55°C ~ 155°C
Mounting Type: Surface Mount
Size / Dimension: 0.079" L x 0.039" W (2.00mm x 1.00mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0804, Convex, Long Side Terminals
Number of Pins: 8
Circuit Type: Isolated
Power Per Element: 62.5mW
Tolerance: ±5%
Resistance (Ohms): 15
Packaging: Cut Tape (CT)
Description: RES ARRAY 4 RES 15 OHM 0804
Number of Resistors: 4
Height - Seated (Max): 0.020" (0.50mm)
Operating Temperature: -55°C ~ 155°C
Mounting Type: Surface Mount
Size / Dimension: 0.079" L x 0.039" W (2.00mm x 1.00mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0804, Convex, Long Side Terminals
Number of Pins: 8
Circuit Type: Isolated
Power Per Element: 62.5mW
Tolerance: ±5%
Resistance (Ohms): 15
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| RB168VAM-30TR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Description: DIODE SCHOTTKY 30V 1A TUMD2M
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RB168VAM-30TR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Description: DIODE SCHOTTKY 30V 1A TUMD2M
на замовлення 695 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.34 грн |
| 14+ | 22.60 грн |
| 100+ | 15.39 грн |
| 500+ | 10.83 грн |
| SDR10EZPJ2R4 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 2.4 OHM 5% 1/2W 0805
Resistance: 2.4 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Description: RES 2.4 OHM 5% 1/2W 0805
Resistance: 2.4 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 2.04 грн |
| SDR10EZPJ2R4 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 2.4 OHM 5% 1/2W 0805
Resistance: 2.4 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Description: RES 2.4 OHM 5% 1/2W 0805
Resistance: 2.4 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.44 грн |
| 22+ | 14.43 грн |
| 100+ | 5.64 грн |
| 1000+ | 2.21 грн |
| 2500+ | 2.03 грн |
| SDR03EZPJ2R4 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 0.94 грн |
| SDR03EZPJ2R4 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 9900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 7.93 грн |
| 44+ | 6.95 грн |
| 116+ | 2.65 грн |
| 1000+ | 1.10 грн |
| 2500+ | 0.95 грн |
| SFR03EZPJ2R4 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 0.92 грн |
| SFR03EZPJ2R4 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 9897 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.80 грн |
| 118+ | 2.59 грн |
| 1000+ | 1.07 грн |
| 2500+ | 0.93 грн |
| RBR20T60ANZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 60V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Description: DIODE ARR SCHOTT 60V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.86 грн |
| RBQ10RSM65BTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 65V 10A TO277A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| RBQ10RSM65BTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 65V 10A TO277A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 1476 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.70 грн |
| 10+ | 75.82 грн |
| 100+ | 50.85 грн |
| 500+ | 37.65 грн |
| 1000+ | 34.40 грн |
| RBQ10RSM65BTFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 65V 10A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| RBQ10RSM65BTFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 65V 10A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 3839 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.00 грн |
| 10+ | 82.16 грн |
| 100+ | 55.34 грн |
| 500+ | 41.11 грн |
| 1000+ | 37.63 грн |
| 2000+ | 34.69 грн |
| RBQ5RSM65BTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 65V 5A TO277A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| RBQ5RSM65BTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 65V 5A TO277A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 3967 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.43 грн |
| 10+ | 50.47 грн |
| 100+ | 39.23 грн |
| 500+ | 31.20 грн |
| 1000+ | 25.42 грн |
| 2000+ | 23.93 грн |
| RBQ3RSM65BTFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 3A TO277A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Qualification: AEC-Q101
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 65V 3A TO277A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Qualification: AEC-Q101
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 31.77 грн |
| RBQ3RSM65BTFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 3A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 65V 3A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.91 грн |
| 10+ | 60.47 грн |
| 100+ | 47.07 грн |
| 500+ | 37.44 грн |
| 1000+ | 30.50 грн |
| 2000+ | 28.71 грн |
| RBQ5RSM65BTFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 65V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 31.77 грн |
| RBQ5RSM65BTFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Description: DIODE SCHOTTKY 65V 5A TO277A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.91 грн |
| 10+ | 60.47 грн |
| 100+ | 47.07 грн |
| 500+ | 37.44 грн |
| 1000+ | 30.50 грн |
| 2000+ | 28.71 грн |
| RBQ3RSM65BTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 3A TO277A
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 65 V
Description: DIODE SCHOTTKY 65V 3A TO277A
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 65 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| RBQ3RSM65BTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 3A TO277A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 65V 3A TO277A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 3990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.43 грн |
| 10+ | 50.47 грн |
| 100+ | 39.23 грн |
| 500+ | 31.20 грн |
| 1000+ | 25.42 грн |
| 2000+ | 23.93 грн |
| DTC143EE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DTC143EE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 2092 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.41 грн |
| 24+ | 12.75 грн |
| 100+ | 7.96 грн |
| 500+ | 5.51 грн |
| 1000+ | 4.88 грн |
| RB706F-40T106 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 30MA UMD3
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD3
Current - Average Rectified (Io) (per Diode): 30mA
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY SCHOTT 40V 30MA UMD3
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD3
Current - Average Rectified (Io) (per Diode): 30mA
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.17 грн |
| 6000+ | 9.83 грн |
| 9000+ | 9.36 грн |
| 15000+ | 8.29 грн |
| UMZ30NT106 |
![]() |
Виробник: Rohm Semiconductor
Description: ZENER ARRAYS FOR TERMINAL PROTEC
Description: ZENER ARRAYS FOR TERMINAL PROTEC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| UMZ30NT106 |
![]() |
Виробник: Rohm Semiconductor
Description: ZENER ARRAYS FOR TERMINAL PROTEC
Description: ZENER ARRAYS FOR TERMINAL PROTEC
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.03 грн |
| 10+ | 32.99 грн |
| 100+ | 22.44 грн |
| 500+ | 15.80 грн |
| 1000+ | 11.85 грн |
| DA228UMTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Description: DIODE ARRAY GP 80V 100MA UMD3F
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DA228UMTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 100MA UMD3F
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
на замовлення 2575 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.96 грн |
| 15+ | 20.54 грн |
| 100+ | 12.30 грн |
| 500+ | 10.69 грн |
| 1000+ | 7.27 грн |
| DA204UMTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 20V 100MA UMD3F
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 20V 100MA UMD3F
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
на замовлення 72 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.58 грн |
| 24+ | 12.90 грн |
| RB715UMTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 30MA UMD3F
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 30mA
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 40V 30MA UMD3F
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 30mA
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.35 грн |



















