Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (106378) > Сторінка 914 з 1773
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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SML-D13UWT86A | Rohm Semiconductor |
Description: MINI-MOLD CHIP LED: ROHM'S CHIP |
на замовлення 2985 шт: термін постачання 21-31 дні (днів) |
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RD3H160SPTL1 | Rohm Semiconductor |
Description: MOSFET P-CH 45V 16A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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RD3H160SPTL1 | Rohm Semiconductor |
Description: MOSFET P-CH 45V 16A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V |
на замовлення 951 шт: термін постачання 21-31 дні (днів) |
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R6030KNZ4C13 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 30A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Power Dissipation (Max): 305W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V |
на замовлення 538 шт: термін постачання 21-31 дні (днів) |
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| R6035KNZ4C13 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 35A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V Power Dissipation (Max): 379W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
на замовлення 580 шт: термін постачання 21-31 дні (днів) |
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RB095T-40NZC9 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 6A TO220FNDiode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Current - Reverse Leakage @ Vr: 100 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-220FN Current - Average Rectified (Io) (per Diode): 6A |
на замовлення 996 шт: термін постачання 21-31 дні (днів) |
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RB095T-90 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 90V 3A TO220FNCurrent - Reverse Leakage @ Vr: 150 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 90 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-220FN Current - Average Rectified (Io) (per Diode): 3A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SDR10EZPF1003 | Rohm Semiconductor |
Description: RES 100K OHM 1% 1/2W 0805 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
| SDR10EZPF1003 | Rohm Semiconductor |
Description: RES 100K OHM 1% 1/2W 0805 |
на замовлення 4960 шт: термін постачання 21-31 дні (днів) |
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RB085BGE-30TL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 30V 10A TO252Current - Reverse Leakage @ Vr: 300 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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RB085BGE-30TL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 30V 10A TO252Current - Reverse Leakage @ Vr: 300 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 1490 шт: термін постачання 21-31 дні (днів) |
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BD4958G-TR | Rohm Semiconductor |
Description: IC RESET CMOS 5.8V 5SSOP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BD4958G-TR | Rohm Semiconductor |
Description: IC RESET CMOS 5.8V 5SSOP |
на замовлення 3852 шт: термін постачання 21-31 дні (днів) |
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RBQ10BM65AFHTL | Rohm Semiconductor |
Description: SCHOTTKY BARRIER DIODE (AEC-Q101Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 65 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RBQ10BM65AFHTL | Rohm Semiconductor |
Description: SCHOTTKY BARRIER DIODE (AEC-Q101Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 65 V |
на замовлення 2474 шт: термін постачання 21-31 дні (днів) |
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RBQ10T45ANZC9 | Rohm Semiconductor |
Description: RBQ10T45ANZ IS LOW IRPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Current - Reverse Leakage @ Vr: 70 µA @ 45 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RBQ10T65ANZC9 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 65V 10A TO220FNPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 70 µA @ 65 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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RBQ10NS45ATL | Rohm Semiconductor |
Description: SCHOTTKY BARRIER DIODE |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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RBQ10NS45ATL | Rohm Semiconductor |
Description: SCHOTTKY BARRIER DIODE |
на замовлення 747 шт: термін постачання 21-31 дні (днів) |
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RBQ10NS65AFHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 65V 10A LPDSQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 70 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 65 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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RBQ10NS65AFHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 65V 10A LPDSQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 70 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 65 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RBQ10NS65ATL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 65V 10A LPDSCurrent - Reverse Leakage @ Vr: 70 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 65 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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RBQ10NS65ATL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 65V 10A LPDSCurrent - Reverse Leakage @ Vr: 70 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 65 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RBQ10NS45AFHTL | Rohm Semiconductor |
Description: DIODE (RECTIFIER FRD) 45V-VRM 45 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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RBQ10NS45AFHTL | Rohm Semiconductor |
Description: DIODE (RECTIFIER FRD) 45V-VRM 45 |
на замовлення 772 шт: термін постачання 21-31 дні (днів) |
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R6015FNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 15A LPTInput Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R6015FNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 15A TO-220FMInput Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 77W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSM300C12P3E201 | Rohm Semiconductor |
Description: SICFET N-CH 1200V 300A MODULEInput Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -4V Part Status: Active Supplier Device Package: Module Vgs(th) (Max) @ Id: 5.6V @ 80mA Power Dissipation (Max): 1360W (Tc) Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Technology: SiCFET (Silicon Carbide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk FET Type: N-Channel |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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RB521VM-30TE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 200MA UMD2Current - Reverse Leakage @ Vr: 30 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: UMD2 Current - Average Rectified (Io): 200mA Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Packaging: Tape & Reel (TR) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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RB521VM-30TE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 200MA UMD2Current - Reverse Leakage @ Vr: 30 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: UMD2 Current - Average Rectified (Io): 200mA Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Packaging: Cut Tape (CT) |
на замовлення 14746 шт: термін постачання 21-31 дні (днів) |
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RB521CM-40T2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 100MAVMN2MCurrent - Reverse Leakage @ Vr: 100 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: VMN2M (SOD-923) Current - Average Rectified (Io): 100mA Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RB521CM-40T2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 100MAVMN2MCurrent - Reverse Leakage @ Vr: 100 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: VMN2M (SOD-923) Current - Average Rectified (Io): 100mA Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 23436 шт: термін постачання 21-31 дні (днів) |
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RB521CS-30FHT2RA | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 100MAVMN2Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: VMN2 (SOD-923) Current - Average Rectified (Io): 100mA Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Tape & Reel (TR) Grade: Automotive |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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RB521CS-30FHT2RA | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 100MAVMN2Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: VMN2 (SOD-923) Current - Average Rectified (Io): 100mA Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 16783 шт: термін постачання 21-31 дні (днів) |
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RB521VM-40TE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 200MA UMD2Current - Reverse Leakage @ Vr: 90 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: UMD2 Current - Average Rectified (Io): 200mA Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Packaging: Tape & Reel (TR) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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RB521VM-40TE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 200MA UMD2Current - Reverse Leakage @ Vr: 90 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: UMD2 Current - Average Rectified (Io): 200mA Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Packaging: Cut Tape (CT) |
на замовлення 9399 шт: термін постачання 21-31 дні (днів) |
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RB078RSM10STFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 5A TO277AQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 100 V Grade: Automotive Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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RB078RSM10STFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 5A TO277APackage / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 100 V Grade: Automotive Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount |
на замовлення 1635 шт: термін постачання 21-31 дні (днів) |
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RB048RSM10STL1 | Rohm Semiconductor |
Description: 100V 8A, TO-277GE, ULTRA LOW IRVoltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 8A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 3.4 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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RB048RSM10STL1 | Rohm Semiconductor |
Description: 100V 8A, TO-277GE, ULTRA LOW IRCurrent - Reverse Leakage @ Vr: 3.4 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 8A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 3912 шт: термін постачання 21-31 дні (днів) |
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RB088RSM10STL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 10A TO277ACurrent - Reverse Leakage @ Vr: 3.7 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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RB088RSM10STL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 10A TO277ATechnology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 10A |
на замовлення 3798 шт: термін постачання 21-31 дні (днів) |
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RB078RSM10STL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 5A TO277ACurrent - Reverse Leakage @ Vr: 1.3 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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RB078RSM10STL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 5A TO277AMounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) |
на замовлення 3820 шт: термін постачання 21-31 дні (днів) |
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RB088RSM10STFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 10A TO277AQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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RB088RSM10STFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 10A TO277AQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 3460 шт: термін постачання 21-31 дні (днів) |
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UT6J3TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 20V 3A HUML2020L8Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
на замовлення 1174 шт: термін постачання 21-31 дні (днів) |
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SFR10EZPF1001 | Rohm Semiconductor |
Description: RES 1 KOHM 1% 1/8W 0805Resistance: 1 kOhms Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 0805 Number of Terminations: 2 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0805 (2012 Metric) Features: Anti-Sulfur Tolerance: ±1% Power (Watts): 0.125W, 1/8W Packaging: Tape & Reel (TR) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR10EZPF1001 | Rohm Semiconductor |
Description: RES 1 KOHM 1% 1/8W 0805Resistance: 1 kOhms Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 0805 Number of Terminations: 2 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0805 (2012 Metric) Features: Anti-Sulfur Tolerance: ±1% Power (Watts): 0.125W, 1/8W Packaging: Cut Tape (CT) |
на замовлення 18626 шт: термін постачання 21-31 дні (днів) |
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RD3P130SPTL1 | Rohm Semiconductor |
Description: MOSFET P-CH 100V 13A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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RD3P130SPTL1 | Rohm Semiconductor |
Description: MOSFET P-CH 100V 13A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
на замовлення 1983 шт: термін постачання 21-31 дні (днів) |
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| RB161SS-207HFT2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 20V 1A KMD2 Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: KMD2 Operating Temperature - Junction: 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BU7233SF-E2 | Rohm Semiconductor |
Description: IC COMPARATOR 2 CMOS 8SOPPart Status: Active CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR Current - Output (Typ): 6mA @ 3V Current - Input Bias (Max): 1pA @ 3V Voltage - Input Offset (Max): 11mV @ 3V Current - Quiescent (Max): 25µA Propagation Delay (Max): 1.8µs Supplier Device Package: 8-SOP Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V Operating Temperature: -40°C ~ 105°C Type: CMOS Number of Elements: 2 Mounting Type: Surface Mount Output Type: CMOS, Open-Drain Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BU7233SF-E2 | Rohm Semiconductor |
Description: IC COMPARATOR 2 CMOS 8SOPPart Status: Active CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR Current - Output (Typ): 6mA @ 3V Current - Input Bias (Max): 1pA @ 3V Voltage - Input Offset (Max): 11mV @ 3V Current - Quiescent (Max): 25µA Propagation Delay (Max): 1.8µs Supplier Device Package: 8-SOP Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V Operating Temperature: -40°C ~ 105°C Type: CMOS Number of Elements: 2 Mounting Type: Surface Mount Output Type: CMOS, Open-Drain Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DTC114TE3HZGTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 Only |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTC114TE3HZGTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 Only |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RGTH80TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 70A TO247GPower - Max: 234 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 70 A Gate Charge: 79 nC Test Condition: 400V, 40A, 10Ohm, 15V Td (on/off) @ 25°C: 34ns/120ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247G Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Reverse Recovery Time (trr): 236 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 593 шт: термін постачання 21-31 дні (днів) |
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RGWS80TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 71A TO247GOperating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Switching Energy: 700µJ (on), 660µJ (off) Td (on/off) @ 25°C: 40ns/114ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247G Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Reverse Recovery Time (trr): 88 ns Input Type: Standard Power - Max: 202 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 71 A Gate Charge: 83 nC Test Condition: 400V, 40A, 10Ohm, 15V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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RGS80TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 73A TO-247NPower - Max: 272 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 73 A Gate Charge: 48 nC Test Condition: 400V, 40A, 10Ohm, 15V Switching Energy: 1.05mJ (on), 1.03mJ (off) Td (on/off) @ 25°C: 37ns/112ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Reverse Recovery Time (trr): 103 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 361 шт: термін постачання 21-31 дні (днів) |
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RGSX5TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 114A TO247NPower - Max: 404 W Current - Collector Pulsed (Icm): 225 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 114 A Gate Charge: 79 nC Test Condition: 400V, 75A, 10Ohm, 15V Switching Energy: 3.32mJ (on), 1.9mJ (off) Td (on/off) @ 25°C: 43ns/113ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Reverse Recovery Time (trr): 114 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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| SML-D13UWT86A |
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Виробник: Rohm Semiconductor
Description: MINI-MOLD CHIP LED: ROHM'S CHIP
Description: MINI-MOLD CHIP LED: ROHM'S CHIP
на замовлення 2985 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.41 грн |
| 14+ | 23.02 грн |
| 100+ | 13.24 грн |
| 1000+ | 9.72 грн |
| RD3H160SPTL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 45V 16A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Description: MOSFET P-CH 45V 16A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RD3H160SPTL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 45V 16A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Description: MOSFET P-CH 45V 16A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
на замовлення 951 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 160.68 грн |
| 10+ | 98.80 грн |
| 50+ | 74.80 грн |
| 100+ | 62.93 грн |
| 500+ | 50.18 грн |
| R6030KNZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
на замовлення 538 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 608.24 грн |
| 30+ | 341.19 грн |
| 60+ | 311.99 грн |
| 120+ | 269.75 грн |
| 510+ | 232.80 грн |
| R6035KNZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Description: MOSFET N-CH 600V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
на замовлення 580 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 735.22 грн |
| 10+ | 639.83 грн |
| 100+ | 529.72 грн |
| 500+ | 432.88 грн |
| RB095T-40NZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 6A TO220FN
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 6A
Description: DIODE ARR SCHOTT 40V 6A TO220FN
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 6A
на замовлення 996 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.95 грн |
| 50+ | 107.10 грн |
| 100+ | 88.12 грн |
| 500+ | 69.98 грн |
| RB095T-90 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 90V 3A TO220FN
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: DIODE ARR SCHOTT 90V 3A TO220FN
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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| SDR10EZPF1003 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 100K OHM 1% 1/2W 0805
Description: RES 100K OHM 1% 1/2W 0805
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SDR10EZPF1003 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 100K OHM 1% 1/2W 0805
Description: RES 100K OHM 1% 1/2W 0805
на замовлення 4960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.95 грн |
| 17+ | 18.04 грн |
| 100+ | 7.05 грн |
| 1000+ | 2.77 грн |
| 2500+ | 2.54 грн |
| RB085BGE-30TL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 10A TO252
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 30V 10A TO252
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RB085BGE-30TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 10A TO252
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 30V 10A TO252
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 146.57 грн |
| 10+ | 90.20 грн |
| 100+ | 61.03 грн |
| 500+ | 45.55 грн |
| 1000+ | 41.77 грн |
| BD4958G-TR |
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Виробник: Rohm Semiconductor
Description: IC RESET CMOS 5.8V 5SSOP
Description: IC RESET CMOS 5.8V 5SSOP
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| BD4958G-TR |
![]() |
Виробник: Rohm Semiconductor
Description: IC RESET CMOS 5.8V 5SSOP
Description: IC RESET CMOS 5.8V 5SSOP
на замовлення 3852 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.49 грн |
| 11+ | 28.53 грн |
| 25+ | 26.63 грн |
| 100+ | 19.99 грн |
| 250+ | 18.56 грн |
| 500+ | 15.70 грн |
| 1000+ | 11.94 грн |
| RBQ10BM65AFHTL |
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Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
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| RBQ10BM65AFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
на замовлення 2474 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.62 грн |
| 10+ | 57.59 грн |
| 100+ | 44.88 грн |
| 500+ | 34.79 грн |
| 1000+ | 27.47 грн |
| RBQ10T45ANZC9 |
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Виробник: Rohm Semiconductor
Description: RBQ10T45ANZ IS LOW IR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 45 V
Description: RBQ10T45ANZ IS LOW IR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 45 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.44 грн |
| 10+ | 72.91 грн |
| 100+ | 56.87 грн |
| 500+ | 44.09 грн |
| 1000+ | 34.81 грн |
| RBQ10T65ANZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 65V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Description: DIODE ARR SCHOTT 65V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| RBQ10NS45ATL |
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Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE
Description: SCHOTTKY BARRIER DIODE
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| RBQ10NS45ATL |
![]() |
Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE
Description: SCHOTTKY BARRIER DIODE
на замовлення 747 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.08 грн |
| 10+ | 71.40 грн |
| 100+ | 55.70 грн |
| 500+ | 43.18 грн |
| RBQ10NS65AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| RBQ10NS65AFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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| RBQ10NS65ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| RBQ10NS65ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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| RBQ10NS45AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE (RECTIFIER FRD) 45V-VRM 45
Description: DIODE (RECTIFIER FRD) 45V-VRM 45
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| RBQ10NS45AFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE (RECTIFIER FRD) 45V-VRM 45
Description: DIODE (RECTIFIER FRD) 45V-VRM 45
на замовлення 772 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.46 грн |
| 10+ | 63.85 грн |
| 100+ | 49.83 грн |
| 500+ | 38.63 грн |
| R6015FNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A LPT
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 15A LPT
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| R6015FNX |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A TO-220FM
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 600V 15A TO-220FM
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| BSM300C12P3E201 |
![]() |
Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 300A MODULE
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -4V
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 5.6V @ 80mA
Power Dissipation (Max): 1360W (Tc)
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
FET Type: N-Channel
Description: SICFET N-CH 1200V 300A MODULE
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -4V
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 5.6V @ 80mA
Power Dissipation (Max): 1360W (Tc)
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
FET Type: N-Channel
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 51710.60 грн |
| RB521VM-30TE-17 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA UMD2
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 200MA UMD2
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.13 грн |
| 6000+ | 2.85 грн |
| 9000+ | 2.81 грн |
| RB521VM-30TE-17 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA UMD2
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 30V 200MA UMD2
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
на замовлення 14746 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.89 грн |
| 31+ | 9.96 грн |
| 100+ | 6.53 грн |
| 500+ | 4.86 грн |
| 1000+ | 4.34 грн |
| RB521CM-40T2R |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MAVMN2M
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: VMN2M (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 100MAVMN2M
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: VMN2M (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 1.88 грн |
| RB521CM-40T2R |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MAVMN2M
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: VMN2M (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 100MAVMN2M
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: VMN2M (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 23436 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 14.11 грн |
| 37+ | 8.30 грн |
| 100+ | 5.25 грн |
| 500+ | 3.58 грн |
| 1000+ | 3.20 грн |
| 2000+ | 3.06 грн |
| RB521CS-30FHT2RA |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MAVMN2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMN2 (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Grade: Automotive
Description: DIODE SCHOTTKY 30V 100MAVMN2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMN2 (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Grade: Automotive
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 3.83 грн |
| 16000+ | 3.62 грн |
| RB521CS-30FHT2RA |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MAVMN2
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMN2 (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 30V 100MAVMN2
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMN2 (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 16783 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.30 грн |
| 21+ | 14.42 грн |
| 100+ | 8.50 грн |
| 500+ | 6.40 грн |
| 1000+ | 5.59 грн |
| 2000+ | 4.74 грн |
| RB521VM-40TE-17 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.13 грн |
| 6000+ | 2.85 грн |
| 9000+ | 2.81 грн |
| RB521VM-40TE-17 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
на замовлення 9399 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.03 грн |
| 30+ | 10.27 грн |
| 100+ | 6.32 грн |
| 500+ | 4.66 грн |
| 1000+ | 4.26 грн |
| RB078RSM10STFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| RB078RSM10STFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 5A TO277A
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE SCHOTTKY 100V 5A TO277A
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
на замовлення 1635 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.33 грн |
| 10+ | 67.02 грн |
| 100+ | 49.31 грн |
| 500+ | 36.53 грн |
| 1000+ | 33.39 грн |
| RB048RSM10STL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 100V 8A, TO-277GE, ULTRA LOW IR
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3.4 µA @ 100 V
Description: 100V 8A, TO-277GE, ULTRA LOW IR
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3.4 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| RB048RSM10STL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 100V 8A, TO-277GE, ULTRA LOW IR
Current - Reverse Leakage @ Vr: 3.4 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: 100V 8A, TO-277GE, ULTRA LOW IR
Current - Reverse Leakage @ Vr: 3.4 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 3912 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.65 грн |
| 10+ | 67.18 грн |
| 100+ | 52.25 грн |
| 500+ | 41.56 грн |
| 1000+ | 33.86 грн |
| 2000+ | 31.87 грн |
| RB088RSM10STL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 10A TO277A
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 10A TO277A
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| RB088RSM10STL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 10A TO277A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Description: DIODE SCHOTTKY 100V 10A TO277A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
на замовлення 3798 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.76 грн |
| 10+ | 77.74 грн |
| 100+ | 58.85 грн |
| 500+ | 45.03 грн |
| 1000+ | 40.08 грн |
| 2000+ | 37.15 грн |
| RB078RSM10STL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 5A TO277A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 5A TO277A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| RB078RSM10STL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 5A TO277A
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE SCHOTTKY 100V 5A TO277A
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
на замовлення 3820 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.06 грн |
| 10+ | 57.89 грн |
| 100+ | 42.74 грн |
| 500+ | 31.48 грн |
| 1000+ | 28.70 грн |
| 2000+ | 27.63 грн |
| RB088RSM10STFTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 10A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 10A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| RB088RSM10STFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 10A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 100V 10A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 3460 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 150.49 грн |
| 10+ | 98.57 грн |
| 100+ | 68.04 грн |
| 500+ | 50.90 грн |
| 1000+ | 46.74 грн |
| 2000+ | 43.24 грн |
| UT6J3TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 3A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET 2P-CH 20V 3A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
на замовлення 1174 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.25 грн |
| 10+ | 45.51 грн |
| 100+ | 29.75 грн |
| 500+ | 21.54 грн |
| 1000+ | 19.49 грн |
| SFR10EZPF1001 |
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Виробник: Rohm Semiconductor
Description: RES 1 KOHM 1% 1/8W 0805
Resistance: 1 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Anti-Sulfur
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Tape & Reel (TR)
Description: RES 1 KOHM 1% 1/8W 0805
Resistance: 1 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Anti-Sulfur
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 1.54 грн |
| 10000+ | 1.39 грн |
| SFR10EZPF1001 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 1 KOHM 1% 1/8W 0805
Resistance: 1 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Anti-Sulfur
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Cut Tape (CT)
Description: RES 1 KOHM 1% 1/8W 0805
Resistance: 1 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Anti-Sulfur
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Cut Tape (CT)
на замовлення 18626 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.32 грн |
| 28+ | 10.87 грн |
| 53+ | 5.75 грн |
| 100+ | 4.00 грн |
| 500+ | 2.42 грн |
| 1000+ | 1.67 грн |
| RD3P130SPTL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 100V 13A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Description: MOSFET P-CH 100V 13A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RD3P130SPTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 100V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Description: MOSFET P-CH 100V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 1983 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.49 грн |
| 10+ | 111.48 грн |
| 100+ | 76.31 грн |
| 500+ | 57.47 грн |
| 1000+ | 53.27 грн |
| RB161SS-207HFT2R |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE SCHOTTKY 20V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| BU7233SF-E2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Part Status: Active
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Current - Output (Typ): 6mA @ 3V
Current - Input Bias (Max): 1pA @ 3V
Voltage - Input Offset (Max): 11mV @ 3V
Current - Quiescent (Max): 25µA
Propagation Delay (Max): 1.8µs
Supplier Device Package: 8-SOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Operating Temperature: -40°C ~ 105°C
Type: CMOS
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: CMOS, Open-Drain
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC COMPARATOR 2 CMOS 8SOP
Part Status: Active
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Current - Output (Typ): 6mA @ 3V
Current - Input Bias (Max): 1pA @ 3V
Voltage - Input Offset (Max): 11mV @ 3V
Current - Quiescent (Max): 25µA
Propagation Delay (Max): 1.8µs
Supplier Device Package: 8-SOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Operating Temperature: -40°C ~ 105°C
Type: CMOS
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: CMOS, Open-Drain
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 34.26 грн |
| 5000+ | 32.19 грн |
| BU7233SF-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Part Status: Active
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Current - Output (Typ): 6mA @ 3V
Current - Input Bias (Max): 1pA @ 3V
Voltage - Input Offset (Max): 11mV @ 3V
Current - Quiescent (Max): 25µA
Propagation Delay (Max): 1.8µs
Supplier Device Package: 8-SOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Operating Temperature: -40°C ~ 105°C
Type: CMOS
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: CMOS, Open-Drain
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC COMPARATOR 2 CMOS 8SOP
Part Status: Active
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Current - Output (Typ): 6mA @ 3V
Current - Input Bias (Max): 1pA @ 3V
Voltage - Input Offset (Max): 11mV @ 3V
Current - Quiescent (Max): 25µA
Propagation Delay (Max): 1.8µs
Supplier Device Package: 8-SOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Operating Temperature: -40°C ~ 105°C
Type: CMOS
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: CMOS, Open-Drain
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.33 грн |
| 10+ | 49.74 грн |
| 25+ | 44.89 грн |
| 100+ | 37.18 грн |
| 250+ | 34.81 грн |
| 500+ | 33.38 грн |
| 1000+ | 31.67 грн |
| DTC114TE3HZGTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 Only
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.87 грн |
| DTC114TE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.60 грн |
| 26+ | 11.85 грн |
| 100+ | 7.40 грн |
| 500+ | 5.13 грн |
| 1000+ | 4.54 грн |
| RGTH80TS65DGC13 |
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Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 70A TO247G
Power - Max: 234 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 79 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Td (on/off) @ 25°C: 34ns/120ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 236 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRNCH FIELD 650V 70A TO247G
Power - Max: 234 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 79 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Td (on/off) @ 25°C: 34ns/120ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 236 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 593 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 499.29 грн |
| 10+ | 324.93 грн |
| 100+ | 236.44 грн |
| RGWS80TS65DGC13 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 71A TO247G
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Switching Energy: 700µJ (on), 660µJ (off)
Td (on/off) @ 25°C: 40ns/114ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Reverse Recovery Time (trr): 88 ns
Input Type: Standard
Power - Max: 202 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 71 A
Gate Charge: 83 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Description: IGBT TRENCH FS 650V 71A TO247G
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Switching Energy: 700µJ (on), 660µJ (off)
Td (on/off) @ 25°C: 40ns/114ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Reverse Recovery Time (trr): 88 ns
Input Type: Standard
Power - Max: 202 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 71 A
Gate Charge: 83 nC
Test Condition: 400V, 40A, 10Ohm, 15V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 351.15 грн |
| 30+ | 196.60 грн |
| RGS80TS65DHRC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 73A TO-247N
Power - Max: 272 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 73 A
Gate Charge: 48 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.05mJ (on), 1.03mJ (off)
Td (on/off) @ 25°C: 37ns/112ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 103 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FS 650V 73A TO-247N
Power - Max: 272 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 73 A
Gate Charge: 48 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.05mJ (on), 1.03mJ (off)
Td (on/off) @ 25°C: 37ns/112ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 103 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 361 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 663.89 грн |
| 30+ | 374.95 грн |
| 120+ | 316.92 грн |
| RGSX5TS65DHRC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 114 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FLD 650V 114A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 114 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 529.07 грн |
| 30+ | 406.63 грн |
| 120+ | 376.80 грн |


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