Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (105892) > Сторінка 915 з 1765
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RB715UMTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 30MA UMD3FCurrent - Reverse Leakage @ Vr: 1 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: UMD3F Current - Average Rectified (Io) (per Diode): 30mA Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Cut Tape (CT) |
на замовлення 3988 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
RB717UMTL | Rohm Semiconductor |
Description: RB717UM IS SCHOTTKY BARRIER DIOD Operating Temperature - Junction: 125°C (Max) Supplier Device Package: UMD3F Current - Average Rectified (Io) (per Diode): 30mA Diode Configuration: 1 Pair Common Anode Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
RB717UMTL | Rohm Semiconductor |
Description: RB717UM IS SCHOTTKY BARRIER DIOD Current - Reverse Leakage @ Vr: 1 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: UMD3F Current - Average Rectified (Io) (per Diode): 30mA Diode Configuration: 1 Pair Common Anode Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Cut Tape (CT) |
на замовлення 2620 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
SCT4026DRC15 | Rohm Semiconductor |
Description: 750V, 26M, 4-PIN THD, TRENCH-STRInput Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): +21V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 4.8V @ 15.4mA Power Dissipation (Max): 176W Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
на замовлення 157 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
SCT4036KRC15 | Rohm Semiconductor |
Description: 1200V, 36M, 4-PIN THD, TRENCH-STInput Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +21V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Power Dissipation (Max): 176W Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
на замовлення 4504 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BD70H12G-2CTR | Rohm Semiconductor |
Description: NANO ENERGY, CMOS OUTPUT TYPE, SDigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: 5-SSOP Voltage - Threshold: 1.2V Reset Timeout: 20µs Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 125°C (TA) Reset: Active High Type: Voltage Detector Output: Open Drain or Open Collector Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
BD70H12G-2CTR | Rohm Semiconductor |
Description: NANO ENERGY, CMOS OUTPUT TYPE, SDigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: 5-SSOP Voltage - Threshold: 1.2V Reset Timeout: 20µs Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 125°C (TA) Reset: Active High Type: Voltage Detector Output: Open Drain or Open Collector Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 2591 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BD7004NUX-E2 | Rohm Semiconductor |
Description: IC REG LIN POS ADJ VSON008X2020 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
|
BD70HA3MEFJ-LBH2 | Rohm Semiconductor |
Description: IC REG LINEAR 7V 300MA 8-HTSOP-JPackage / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) Protection Features: Over Current, Over Temperature, Short Circuit Voltage Dropout (Max): 1.2V @ 300mA Part Status: Active Control Features: Enable, Soft Start Voltage - Output (Min/Fixed): 7V Supplier Device Package: 8-HTSOP-J Number of Regulators: 1 Voltage - Input (Max): 8V Current - Quiescent (Iq): 1.2 mA Output Configuration: Positive Operating Temperature: -40°C ~ 105°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | ||||||||||||||||
|
BD70HA3MEFJ-LBH2 | Rohm Semiconductor |
Description: IC REG LINEAR 7V 300MA 8-HTSOP-JProtection Features: Over Current, Over Temperature, Short Circuit Voltage Dropout (Max): 1.2V @ 300mA Part Status: Active Control Features: Enable, Soft Start Voltage - Output (Min/Fixed): 7V Supplier Device Package: 8-HTSOP-J Number of Regulators: 1 Voltage - Input (Max): 8V Current - Quiescent (Iq): 1.2 mA Output Configuration: Positive Operating Temperature: -40°C ~ 105°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 225 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
RCJ120N25TL | Rohm Semiconductor |
Description: MOSFET N-CH 250V 12A LPTInput Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 1.56W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
|
RCJ050N25TL | Rohm Semiconductor |
Description: MOSFET N-CH 250V 5A LPTPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V Power Dissipation (Max): 1.56W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
KTR10EZPF4991 | Rohm Semiconductor |
Description: RES SMD 4.99K OHM 1% 1/8W 0805Packaging: Cut Tape (CT) Power (Watts): 0.125W, 1/8W Tolerance: ±1% Features: Automotive AEC-Q200, High Voltage Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 4.99 kOhms |
на замовлення 7266 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BR93G66NUX-3ATTR | Rohm Semiconductor |
Description: IC EEPROM 4KBIT VSON008X2030Memory Organization: 256 x 16 Memory Interface: Microwire Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: VSON008X2030 Memory Format: EEPROM Clock Frequency: 3 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 4Kbit Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BR93G66NUX-3ATTR | Rohm Semiconductor |
Description: IC EEPROM 4KBIT VSON008X2030Package / Case: 8-UFDFN Exposed Pad Packaging: Cut Tape (CT) Memory Organization: 256 x 16 Memory Interface: Microwire Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: VSON008X2030 Memory Format: EEPROM Clock Frequency: 3 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 4Kbit Mounting Type: Surface Mount DigiKey Programmable: Not Verified |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BM2PDB1Y-Z | Rohm Semiconductor |
Description: NON-ISOLATED TYPE PWM DC/DC CONVFault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Supplier Device Package: 7-DIPK Voltage - Supply (Vcc/Vdd): 11.1V ~ 26V Topology: Buck Output Isolation: Non-Isolated Voltage - Breakdown: 730V Internal Switch(s): Yes Frequency - Switching: 25kHz Duty Cycle: 40% Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Packaging: Tube Voltage - Start Up: 9.3 V Control Features: Soft Start Part Status: Active |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
ADZT15R8.2B | Rohm Semiconductor |
Description: DIODE ZENER 8.2V 100MW DSN0603-2Packaging: Tape & Reel (TR) Tolerance: ±2.44% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Supplier Device Package: DSN0603-2, SOD-962, SMD0603 Part Status: Active Power - Max: 100 mW Current - Reverse Leakage @ Vr: 500 nA @ 5 V |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||||
|
ADZT15R8.2B | Rohm Semiconductor |
Description: DIODE ZENER 8.2V 100MW DSN0603-2Packaging: Cut Tape (CT) Tolerance: ±2.44% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Supplier Device Package: DSN0603-2, SOD-962, SMD0603 Part Status: Active Power - Max: 100 mW Current - Reverse Leakage @ Vr: 500 nA @ 5 V |
на замовлення 11695 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
ADZT15R6.8B | Rohm Semiconductor |
Description: DIODE ZENER 6.8V 100MW DSN0603-2Packaging: Tape & Reel (TR) Tolerance: ±2.54% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Supplier Device Package: DSN0603-2, SOD-962, SMD0603 Part Status: Active Power - Max: 100 mW Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||||
|
ADZT15R6.8B | Rohm Semiconductor |
Description: DIODE ZENER 6.8V 100MW DSN0603-2Packaging: Cut Tape (CT) Tolerance: ±2.54% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Supplier Device Package: DSN0603-2, SOD-962, SMD0603 Part Status: Active Power - Max: 100 mW Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V |
на замовлення 5734 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
ADZT15R5.6B | Rohm Semiconductor |
Description: DIODE ZENER 5.6V 100MW DSN0603-2Packaging: Tape & Reel (TR) Tolerance: ±2.56% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Supplier Device Package: DSN0603-2, SOD-962, SMD0603 Part Status: Active Power - Max: 100 mW Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||||
|
ADZT15R5.6B | Rohm Semiconductor |
Description: DIODE ZENER 5.6V 100MW DSN0603-2Packaging: Cut Tape (CT) Tolerance: ±2.56% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Supplier Device Package: DSN0603-2, SOD-962, SMD0603 Part Status: Active Power - Max: 100 mW Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V |
на замовлення 14730 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DTA144EE3HZGTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A EMT3Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: EMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
DTA144EE3HZGTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A EMT3Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: EMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 2497 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SLI-430U2R3F | Rohm Semiconductor |
Description: LED RED DIFFUSED T/HLens Size: 4.25mm Dia Lens Style: Oval with Domed Top Lens Transparency: Diffused Wavelength - Dominant: 620nm Height (Max): 5.20mm Current - Test: 20mA Lens Color: Red Voltage - Forward (Vf) (Typ): 2V Millicandela Rating: 400mcd Mounting Type: Through Hole Size / Dimension: 4.25mm L x 3.00mm W Color: Red Package / Case: Radial Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
LMR1701G-LBTR | Rohm Semiconductor |
Description: LMR SERIES, HIGH SPEED CMOS OPERPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Output Type: Push-Pull, Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 9.6mA Slew Rate: 80V/µs Gain Bandwidth Product: 150 MHz Current - Input Bias: 2.6 pA Voltage - Input Offset: 1 mV Supplier Device Package: 6-SSOP Part Status: Active Number of Circuits: 1 Current - Output / Channel: 200 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 1995 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BR24G256FVT-5E2 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT I2C 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP-B Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
BR24G256FVT-5E2 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT I2C 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP-B Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
на замовлення 2423 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
RBQ20T65ANZC9 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 65V 10A TO220FNPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A Current - Reverse Leakage @ Vr: 140 µA @ 65 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
|
ESR01MZPF3303 | Rohm Semiconductor |
Description: ANTI-SURGE CHIP RESISTORSResistance: 330 kOhms Part Status: Active Height - Seated (Max): 0.016" (0.40mm) Supplier Device Package: 0402 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0402 (1005 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±1% Power (Watts): 0.2W, 1/5W Packaging: Tape & Reel (TR) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
ESR01MZPF3303 | Rohm Semiconductor |
Description: ANTI-SURGE CHIP RESISTORSResistance: 330 kOhms Part Status: Active Height - Seated (Max): 0.016" (0.40mm) Supplier Device Package: 0402 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0402 (1005 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±1% Power (Watts): 0.2W, 1/5W Packaging: Cut Tape (CT) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SFR03EZPF3303 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORSResistance: 330 kOhms Part Status: Active Height - Seated (Max): 0.022" (0.55mm) Supplier Device Package: 0603 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0603 (1608 Metric) Features: Anti-Sulfur, Automotive AEC-Q200 Tolerance: ±1% Power (Watts): 0.1W, 1/10W Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SFR03EZPF3303 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORSResistance: 330 kOhms Part Status: Active Height - Seated (Max): 0.022" (0.55mm) Supplier Device Package: 0603 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0603 (1608 Metric) Features: Anti-Sulfur, Automotive AEC-Q200 Tolerance: ±1% Power (Watts): 0.1W, 1/10W Packaging: Cut Tape (CT) |
на замовлення 7115 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BM60059FV-CE2 | Rohm Semiconductor |
Description: DGTL ISO 2.5KV 1CH GT DVR 28SSOPPart Status: Active Pulse Width Distortion (Max): 400ns Propagation Delay tpLH / tpHL (Max): 450ns, 450ns Common Mode Transient Immunity (Min): 100kV/µs Supplier Device Package: 28-SSOP-BW Approval Agency: UL Voltage - Isolation: 2500Vrms Current - Output High, Low: 40µA, 160µA Technology: Magnetic Coupling Current - Peak Output: 1A Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 28-SSOP (0.315", 8.00mm Width) Packaging: Tape & Reel (TR) Voltage - Output Supply: 4.5V ~ 24V Number of Channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
|
BM60059FV-CE2 | Rohm Semiconductor |
Description: DGTL ISO 2.5KV 1CH GT DVR 28SSOPPropagation Delay tpLH / tpHL (Max): 450ns, 450ns Common Mode Transient Immunity (Min): 100kV/µs Supplier Device Package: 28-SSOP-BW Approval Agency: UL Voltage - Isolation: 2500Vrms Current - Output High, Low: 40µA, 160µA Technology: Magnetic Coupling Current - Peak Output: 1A Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 28-SSOP (0.315", 8.00mm Width) Packaging: Cut Tape (CT) Voltage - Output Supply: 4.5V ~ 24V Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 400ns |
на замовлення 1414 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SML-D12W8WT86A | Rohm Semiconductor |
Description: LED YELLOW CLEAR 1608 SMDPackaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 7.1mcd Voltage - Forward (Vf) (Typ): 2V Lens Color: Colorless Current - Test: 2mA Height (Max): 0.65mm Wavelength - Dominant: 588nm Supplier Device Package: 1608 (0603) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
SML-D12W8WT86A | Rohm Semiconductor |
Description: LED YELLOW CLEAR 1608 SMDPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 7.1mcd Voltage - Forward (Vf) (Typ): 2V Lens Color: Colorless Current - Test: 2mA Height (Max): 0.65mm Wavelength - Dominant: 588nm Supplier Device Package: 1608 (0603) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm |
на замовлення 2294 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
R6013VND3TL1 | Rohm Semiconductor |
Description: 600V 13A TO-252, PRESTOMOS WITHPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V Power Dissipation (Max): 131W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 500µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
R6013VND3TL1 | Rohm Semiconductor |
Description: 600V 13A TO-252, PRESTOMOS WITHPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V Power Dissipation (Max): 131W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 500µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V |
на замовлення 2145 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
2SAR583D3FRATL | Rohm Semiconductor |
Description: PNP, TO-252 (DPAK), -50V -7A, PO |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
2SAR583D3FRATL | Rohm Semiconductor |
Description: PNP, TO-252 (DPAK), -50V -7A, PO |
на замовлення 2495 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BD81849MUV-CE2 | Rohm Semiconductor |
Description: GAMMA VOLTAGE GENERATED IC WITHPart Status: Active Supplier Device Package: VQFN32SV5050 Current - Supply: 6mA Applications: TFT-LCD Panels: Gamma Buffer, VCOM Driver Voltage - Supply: 2.1V ~ 18V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
BD81849MUV-CE2 | Rohm Semiconductor |
Description: GAMMA VOLTAGE GENERATED IC WITHPart Status: Active Supplier Device Package: VQFN32SV5050 Current - Supply: 6mA Applications: TFT-LCD Panels: Gamma Buffer, VCOM Driver Voltage - Supply: 2.1V ~ 18V Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Packaging: Cut Tape (CT) Operating Temperature: -40°C ~ 105°C (TA) |
на замовлення 2435 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
MMBZ27VALFHT116 | Rohm Semiconductor |
Description: TVS DIODE 22VWM 40VC SSD3Qualification: AEC-Q101 Grade: Automotive Part Status: Not For New Designs Power Line Protection: No Power - Peak Pulse: 40W Voltage - Clamping (Max) @ Ipp: 40V Voltage - Breakdown (Min): 25.65V Unidirectional Channels: 1 Supplier Device Package: SSD3 Voltage - Reverse Standoff (Typ): 22V (Max) Current - Peak Pulse (10/1000µs): 1A Capacitance @ Frequency: 42pF @ 1MHz Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BR24S08FVM-WTR | Rohm Semiconductor |
Description: IC EEPROM 8KBIT I2C 400KHZ 8MSOP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
BR24S08F-WE2 | Rohm Semiconductor |
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
SFR01MZPF2323 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SFR01MZPF2323 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BD63801EFV-E2 | Rohm Semiconductor |
Description: IC MTR DRV BIPLR 19-28V 24HTSSOPStep Resolution: 1, 1/2 Motor Type - Stepper: Bipolar Supplier Device Package: 24-HTSSOP-B Voltage - Load: 19V ~ 28V Technology: DMOS Applications: General Purpose Voltage - Supply: 19V ~ 28V Output Configuration: Half Bridge (4) Operating Temperature: -25°C ~ 150°C (TJ) Interface: Parallel Current - Output: 500mA Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BD63801EFV-E2 | Rohm Semiconductor |
Description: IC MTR DRV BIPLR 19-28V 24HTSSOPFunction: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Packaging: Cut Tape (CT) Step Resolution: 1, 1/2 Motor Type - Stepper: Bipolar Supplier Device Package: 24-HTSSOP-B Voltage - Load: 19V ~ 28V Technology: DMOS Applications: General Purpose Voltage - Supply: 19V ~ 28V Output Configuration: Half Bridge (4) Operating Temperature: -25°C ~ 150°C (TJ) Interface: Parallel Current - Output: 500mA |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
RXL035N03TCR | Rohm Semiconductor |
Description: NCH 30V 3..5A SMALL SIGNAL MOSFEGate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 910mW (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V |
на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
RTM002P02T2L | Rohm Semiconductor |
Description: MOSFET P-CH 20V 200MA VMT3Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: VMT3 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 150mW (Ta) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
VT6Z1T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP 20V 0.2A 6VMT |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
VT6Z1T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP 20V 0.2A 6VMT |
на замовлення 15924 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
QH8KA3TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 9A TSMT8Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.5W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
QH8KA3TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 9A TSMT8Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.5W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 2305 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
QH8KB6TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 40V 8A TSMT8Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drain to Source Voltage (Vdss): 40V Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
QH8KB6TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 40V 8A TSMT8Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drain to Source Voltage (Vdss): 40V |
на замовлення 5950 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
QH8JC5TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 60V 3.5A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
QH8JC5TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 60V 3.5A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 57658 шт: термін постачання 21-31 дні (днів) |
|
| RB715UMTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 30MA UMD3F
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 30mA
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 40V 30MA UMD3F
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 30mA
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
на замовлення 3988 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.62 грн |
| 24+ | 13.13 грн |
| 100+ | 6.42 грн |
| 500+ | 5.03 грн |
| 1000+ | 3.49 грн |
| RB717UMTL |
Виробник: Rohm Semiconductor
Description: RB717UM IS SCHOTTKY BARRIER DIOD
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 30mA
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Description: RB717UM IS SCHOTTKY BARRIER DIOD
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 30mA
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RB717UMTL |
Виробник: Rohm Semiconductor
Description: RB717UM IS SCHOTTKY BARRIER DIOD
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 30mA
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
Description: RB717UM IS SCHOTTKY BARRIER DIOD
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 30mA
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
на замовлення 2620 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.06 грн |
| 12+ | 26.19 грн |
| 100+ | 13.19 грн |
| 500+ | 10.97 грн |
| 1000+ | 8.54 грн |
| SCT4026DRC15 |
![]() |
Виробник: Rohm Semiconductor
Description: 750V, 26M, 4-PIN THD, TRENCH-STR
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +21V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Power Dissipation (Max): 176W
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: 750V, 26M, 4-PIN THD, TRENCH-STR
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +21V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Power Dissipation (Max): 176W
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
на замовлення 157 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1443.13 грн |
| 10+ | 993.47 грн |
| 50+ | 824.55 грн |
| SCT4036KRC15 |
![]() |
Виробник: Rohm Semiconductor
Description: 1200V, 36M, 4-PIN THD, TRENCH-ST
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +21V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Power Dissipation (Max): 176W
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: 1200V, 36M, 4-PIN THD, TRENCH-ST
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +21V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Power Dissipation (Max): 176W
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
на замовлення 4504 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1548.59 грн |
| 10+ | 1067.08 грн |
| 50+ | 886.10 грн |
| 450+ | 735.81 грн |
| BD70H12G-2CTR |
![]() |
Виробник: Rohm Semiconductor
Description: NANO ENERGY, CMOS OUTPUT TYPE, S
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Threshold: 1.2V
Reset Timeout: 20µs Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active High
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Description: NANO ENERGY, CMOS OUTPUT TYPE, S
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Threshold: 1.2V
Reset Timeout: 20µs Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active High
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BD70H12G-2CTR |
![]() |
Виробник: Rohm Semiconductor
Description: NANO ENERGY, CMOS OUTPUT TYPE, S
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Threshold: 1.2V
Reset Timeout: 20µs Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active High
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: NANO ENERGY, CMOS OUTPUT TYPE, S
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Threshold: 1.2V
Reset Timeout: 20µs Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active High
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 2591 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.30 грн |
| 10+ | 38.87 грн |
| 25+ | 34.97 грн |
| 100+ | 28.76 грн |
| 250+ | 26.84 грн |
| 500+ | 25.68 грн |
| 1000+ | 24.32 грн |
| BD7004NUX-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LIN POS ADJ VSON008X2020
Description: IC REG LIN POS ADJ VSON008X2020
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| BD70HA3MEFJ-LBH2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 7V 300MA 8-HTSOP-J
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 1.2V @ 300mA
Part Status: Active
Control Features: Enable, Soft Start
Voltage - Output (Min/Fixed): 7V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 8V
Current - Quiescent (Iq): 1.2 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Description: IC REG LINEAR 7V 300MA 8-HTSOP-J
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 1.2V @ 300mA
Part Status: Active
Control Features: Enable, Soft Start
Voltage - Output (Min/Fixed): 7V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 8V
Current - Quiescent (Iq): 1.2 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| BD70HA3MEFJ-LBH2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 7V 300MA 8-HTSOP-J
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 1.2V @ 300mA
Part Status: Active
Control Features: Enable, Soft Start
Voltage - Output (Min/Fixed): 7V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 8V
Current - Quiescent (Iq): 1.2 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 7V 300MA 8-HTSOP-J
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 1.2V @ 300mA
Part Status: Active
Control Features: Enable, Soft Start
Voltage - Output (Min/Fixed): 7V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 8V
Current - Quiescent (Iq): 1.2 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.15 грн |
| 10+ | 83.15 грн |
| 25+ | 75.62 грн |
| 100+ | 63.16 грн |
| RCJ120N25TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 12A LPT
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 1.56W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 250V 12A LPT
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 1.56W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| RCJ050N25TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 5A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET N-CH 250V 5A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| KTR10EZPF4991 |
![]() |
Виробник: Rohm Semiconductor
Description: RES SMD 4.99K OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.99 kOhms
Description: RES SMD 4.99K OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.99 kOhms
на замовлення 7266 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 14.27 грн |
| 44+ | 6.95 грн |
| 56+ | 5.53 грн |
| 66+ | 4.39 грн |
| 100+ | 3.78 грн |
| 250+ | 3.16 грн |
| 500+ | 2.77 грн |
| 1000+ | 2.49 грн |
| BR93G66NUX-3ATTR |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 4KBIT VSON008X2030
Memory Organization: 256 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: VSON008X2030
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT VSON008X2030
Memory Organization: 256 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: VSON008X2030
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 11.37 грн |
| BR93G66NUX-3ATTR |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 4KBIT VSON008X2030
Package / Case: 8-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Memory Organization: 256 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: VSON008X2030
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT VSON008X2030
Package / Case: 8-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Memory Organization: 256 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: VSON008X2030
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.65 грн |
| 10+ | 33.90 грн |
| 25+ | 32.37 грн |
| 50+ | 29.29 грн |
| 100+ | 28.26 грн |
| 250+ | 26.95 грн |
| 500+ | 25.57 грн |
| 1000+ | 24.67 грн |
| BM2PDB1Y-Z |
![]() |
Виробник: Rohm Semiconductor
Description: NON-ISOLATED TYPE PWM DC/DC CONV
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 7-DIPK
Voltage - Supply (Vcc/Vdd): 11.1V ~ 26V
Topology: Buck
Output Isolation: Non-Isolated
Voltage - Breakdown: 730V
Internal Switch(s): Yes
Frequency - Switching: 25kHz
Duty Cycle: 40%
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Voltage - Start Up: 9.3 V
Control Features: Soft Start
Part Status: Active
Description: NON-ISOLATED TYPE PWM DC/DC CONV
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 7-DIPK
Voltage - Supply (Vcc/Vdd): 11.1V ~ 26V
Topology: Buck
Output Isolation: Non-Isolated
Voltage - Breakdown: 730V
Internal Switch(s): Yes
Frequency - Switching: 25kHz
Duty Cycle: 40%
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Voltage - Start Up: 9.3 V
Control Features: Soft Start
Part Status: Active
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 187.92 грн |
| 10+ | 135.23 грн |
| 50+ | 116.79 грн |
| 100+ | 104.25 грн |
| 250+ | 98.58 грн |
| 500+ | 95.17 грн |
| 1000+ | 90.85 грн |
| ADZT15R8.2B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 8.2V 100MW DSN0603-2
Packaging: Tape & Reel (TR)
Tolerance: ±2.44%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Description: DIODE ZENER 8.2V 100MW DSN0603-2
Packaging: Tape & Reel (TR)
Tolerance: ±2.44%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| ADZT15R8.2B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 8.2V 100MW DSN0603-2
Packaging: Cut Tape (CT)
Tolerance: ±2.44%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Description: DIODE ZENER 8.2V 100MW DSN0603-2
Packaging: Cut Tape (CT)
Tolerance: ±2.44%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
на замовлення 11695 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 19.03 грн |
| 28+ | 11.07 грн |
| 100+ | 6.88 грн |
| 500+ | 4.74 грн |
| 1000+ | 4.18 грн |
| 2000+ | 3.71 грн |
| 5000+ | 3.15 грн |
| ADZT15R6.8B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.8V 100MW DSN0603-2
Packaging: Tape & Reel (TR)
Tolerance: ±2.54%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Description: DIODE ZENER 6.8V 100MW DSN0603-2
Packaging: Tape & Reel (TR)
Tolerance: ±2.54%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| ADZT15R6.8B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.8V 100MW DSN0603-2
Packaging: Cut Tape (CT)
Tolerance: ±2.54%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Description: DIODE ZENER 6.8V 100MW DSN0603-2
Packaging: Cut Tape (CT)
Tolerance: ±2.54%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
на замовлення 5734 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 19.03 грн |
| 28+ | 11.07 грн |
| 100+ | 6.88 грн |
| 500+ | 4.74 грн |
| 1000+ | 4.18 грн |
| 2000+ | 3.71 грн |
| 5000+ | 3.15 грн |
| ADZT15R5.6B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.6V 100MW DSN0603-2
Packaging: Tape & Reel (TR)
Tolerance: ±2.56%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Description: DIODE ZENER 5.6V 100MW DSN0603-2
Packaging: Tape & Reel (TR)
Tolerance: ±2.56%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| ADZT15R5.6B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.6V 100MW DSN0603-2
Packaging: Cut Tape (CT)
Tolerance: ±2.56%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Description: DIODE ZENER 5.6V 100MW DSN0603-2
Packaging: Cut Tape (CT)
Tolerance: ±2.56%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
на замовлення 14730 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.24 грн |
| 29+ | 10.69 грн |
| 100+ | 6.66 грн |
| 500+ | 4.58 грн |
| 1000+ | 4.04 грн |
| 2000+ | 3.59 грн |
| 5000+ | 3.04 грн |
| DTA144EE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DTA144EE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 2497 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 22.20 грн |
| 24+ | 13.06 грн |
| 100+ | 8.19 грн |
| 500+ | 5.67 грн |
| 1000+ | 5.02 грн |
| SLI-430U2R3F |
![]() |
Виробник: Rohm Semiconductor
Description: LED RED DIFFUSED T/H
Lens Size: 4.25mm Dia
Lens Style: Oval with Domed Top
Lens Transparency: Diffused
Wavelength - Dominant: 620nm
Height (Max): 5.20mm
Current - Test: 20mA
Lens Color: Red
Voltage - Forward (Vf) (Typ): 2V
Millicandela Rating: 400mcd
Mounting Type: Through Hole
Size / Dimension: 4.25mm L x 3.00mm W
Color: Red
Package / Case: Radial
Packaging: Bulk
Description: LED RED DIFFUSED T/H
Lens Size: 4.25mm Dia
Lens Style: Oval with Domed Top
Lens Transparency: Diffused
Wavelength - Dominant: 620nm
Height (Max): 5.20mm
Current - Test: 20mA
Lens Color: Red
Voltage - Forward (Vf) (Typ): 2V
Millicandela Rating: 400mcd
Mounting Type: Through Hole
Size / Dimension: 4.25mm L x 3.00mm W
Color: Red
Package / Case: Radial
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| LMR1701G-LBTR |
![]() |
Виробник: Rohm Semiconductor
Description: LMR SERIES, HIGH SPEED CMOS OPER
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 9.6mA
Slew Rate: 80V/µs
Gain Bandwidth Product: 150 MHz
Current - Input Bias: 2.6 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 6-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 200 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: LMR SERIES, HIGH SPEED CMOS OPER
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 9.6mA
Slew Rate: 80V/µs
Gain Bandwidth Product: 150 MHz
Current - Input Bias: 2.6 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 6-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 200 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 1995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 247.39 грн |
| 10+ | 154.93 грн |
| 100+ | 107.77 грн |
| 500+ | 82.22 грн |
| 1000+ | 80.39 грн |
| BR24G256FVT-5E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 256KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BR24G256FVT-5E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 256KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 2423 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.16 грн |
| 10+ | 44.67 грн |
| 25+ | 43.49 грн |
| 50+ | 39.96 грн |
| 100+ | 39.09 грн |
| 250+ | 37.93 грн |
| 500+ | 36.44 грн |
| 1000+ | 35.57 грн |
| RBQ20T65ANZC9 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 65V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 65 V
Description: DIODE ARR SCHOTT 65V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 65 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| ESR01MZPF3303 |
![]() |
Виробник: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Resistance: 330 kOhms
Part Status: Active
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Tape & Reel (TR)
Description: ANTI-SURGE CHIP RESISTORS
Resistance: 330 kOhms
Part Status: Active
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 3.18 грн |
| ESR01MZPF3303 |
![]() |
Виробник: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Resistance: 330 kOhms
Part Status: Active
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Cut Tape (CT)
Description: ANTI-SURGE CHIP RESISTORS
Resistance: 330 kOhms
Part Status: Active
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Cut Tape (CT)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.34 грн |
| 13+ | 24.05 грн |
| 100+ | 9.40 грн |
| 1000+ | 3.69 грн |
| 2500+ | 3.38 грн |
| 5000+ | 3.08 грн |
| SFR03EZPF3303 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 330 kOhms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Tape & Reel (TR)
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 330 kOhms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 1.29 грн |
| SFR03EZPF3303 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 330 kOhms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 330 kOhms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
на замовлення 7115 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 11.10 грн |
| 33+ | 9.47 грн |
| 100+ | 3.64 грн |
| 1000+ | 1.50 грн |
| 2500+ | 1.30 грн |
| BM60059FV-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: DGTL ISO 2.5KV 1CH GT DVR 28SSOP
Part Status: Active
Pulse Width Distortion (Max): 400ns
Propagation Delay tpLH / tpHL (Max): 450ns, 450ns
Common Mode Transient Immunity (Min): 100kV/µs
Supplier Device Package: 28-SSOP-BW
Approval Agency: UL
Voltage - Isolation: 2500Vrms
Current - Output High, Low: 40µA, 160µA
Technology: Magnetic Coupling
Current - Peak Output: 1A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.315", 8.00mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 4.5V ~ 24V
Number of Channels: 1
Description: DGTL ISO 2.5KV 1CH GT DVR 28SSOP
Part Status: Active
Pulse Width Distortion (Max): 400ns
Propagation Delay tpLH / tpHL (Max): 450ns, 450ns
Common Mode Transient Immunity (Min): 100kV/µs
Supplier Device Package: 28-SSOP-BW
Approval Agency: UL
Voltage - Isolation: 2500Vrms
Current - Output High, Low: 40µA, 160µA
Technology: Magnetic Coupling
Current - Peak Output: 1A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.315", 8.00mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 4.5V ~ 24V
Number of Channels: 1
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| BM60059FV-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: DGTL ISO 2.5KV 1CH GT DVR 28SSOP
Propagation Delay tpLH / tpHL (Max): 450ns, 450ns
Common Mode Transient Immunity (Min): 100kV/µs
Supplier Device Package: 28-SSOP-BW
Approval Agency: UL
Voltage - Isolation: 2500Vrms
Current - Output High, Low: 40µA, 160µA
Technology: Magnetic Coupling
Current - Peak Output: 1A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.315", 8.00mm Width)
Packaging: Cut Tape (CT)
Voltage - Output Supply: 4.5V ~ 24V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 400ns
Description: DGTL ISO 2.5KV 1CH GT DVR 28SSOP
Propagation Delay tpLH / tpHL (Max): 450ns, 450ns
Common Mode Transient Immunity (Min): 100kV/µs
Supplier Device Package: 28-SSOP-BW
Approval Agency: UL
Voltage - Isolation: 2500Vrms
Current - Output High, Low: 40µA, 160µA
Technology: Magnetic Coupling
Current - Peak Output: 1A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.315", 8.00mm Width)
Packaging: Cut Tape (CT)
Voltage - Output Supply: 4.5V ~ 24V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 400ns
на замовлення 1414 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 728.70 грн |
| 10+ | 488.98 грн |
| 25+ | 434.16 грн |
| 100+ | 349.84 грн |
| 250+ | 321.94 грн |
| 500+ | 304.94 грн |
| SML-D12W8WT86A |
![]() |
Виробник: Rohm Semiconductor
Description: LED YELLOW CLEAR 1608 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 7.1mcd
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 588nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Description: LED YELLOW CLEAR 1608 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 7.1mcd
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 588nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SML-D12W8WT86A |
![]() |
Виробник: Rohm Semiconductor
Description: LED YELLOW CLEAR 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 7.1mcd
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 588nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Description: LED YELLOW CLEAR 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 7.1mcd
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 588nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
на замовлення 2294 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.37 грн |
| 19+ | 16.42 грн |
| 100+ | 11.61 грн |
| 500+ | 8.85 грн |
| 1000+ | 8.18 грн |
| R6013VND3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 13A TO-252, PRESTOMOS WITH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 500µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Description: 600V 13A TO-252, PRESTOMOS WITH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 500µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| R6013VND3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 13A TO-252, PRESTOMOS WITH
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 500µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Description: 600V 13A TO-252, PRESTOMOS WITH
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 500µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
на замовлення 2145 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 171.27 грн |
| 10+ | 122.86 грн |
| 25+ | 112.27 грн |
| 100+ | 94.45 грн |
| 250+ | 89.25 грн |
| 500+ | 86.12 грн |
| 1000+ | 82.17 грн |
| 2SAR583D3FRATL |
![]() |
Виробник: Rohm Semiconductor
Description: PNP, TO-252 (DPAK), -50V -7A, PO
Description: PNP, TO-252 (DPAK), -50V -7A, PO
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 2SAR583D3FRATL |
![]() |
Виробник: Rohm Semiconductor
Description: PNP, TO-252 (DPAK), -50V -7A, PO
Description: PNP, TO-252 (DPAK), -50V -7A, PO
на замовлення 2495 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 195.85 грн |
| 10+ | 169.36 грн |
| 100+ | 136.13 грн |
| 500+ | 104.96 грн |
| 1000+ | 86.97 грн |
| BD81849MUV-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: GAMMA VOLTAGE GENERATED IC WITH
Part Status: Active
Supplier Device Package: VQFN32SV5050
Current - Supply: 6mA
Applications: TFT-LCD Panels: Gamma Buffer, VCOM Driver
Voltage - Supply: 2.1V ~ 18V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: GAMMA VOLTAGE GENERATED IC WITH
Part Status: Active
Supplier Device Package: VQFN32SV5050
Current - Supply: 6mA
Applications: TFT-LCD Panels: Gamma Buffer, VCOM Driver
Voltage - Supply: 2.1V ~ 18V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD81849MUV-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: GAMMA VOLTAGE GENERATED IC WITH
Part Status: Active
Supplier Device Package: VQFN32SV5050
Current - Supply: 6mA
Applications: TFT-LCD Panels: Gamma Buffer, VCOM Driver
Voltage - Supply: 2.1V ~ 18V
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 105°C (TA)
Description: GAMMA VOLTAGE GENERATED IC WITH
Part Status: Active
Supplier Device Package: VQFN32SV5050
Current - Supply: 6mA
Applications: TFT-LCD Panels: Gamma Buffer, VCOM Driver
Voltage - Supply: 2.1V ~ 18V
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 105°C (TA)
на замовлення 2435 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 311.62 грн |
| 10+ | 227.77 грн |
| 25+ | 209.58 грн |
| 100+ | 177.97 грн |
| 250+ | 169.04 грн |
| 500+ | 163.66 грн |
| 1000+ | 156.62 грн |
| MMBZ27VALFHT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TVS DIODE 22VWM 40VC SSD3
Qualification: AEC-Q101
Grade: Automotive
Part Status: Not For New Designs
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 40V
Voltage - Breakdown (Min): 25.65V
Unidirectional Channels: 1
Supplier Device Package: SSD3
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Capacitance @ Frequency: 42pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TVS DIODE 22VWM 40VC SSD3
Qualification: AEC-Q101
Grade: Automotive
Part Status: Not For New Designs
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 40V
Voltage - Breakdown (Min): 25.65V
Unidirectional Channels: 1
Supplier Device Package: SSD3
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Capacitance @ Frequency: 42pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BR24S08FVM-WTR |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 8KBIT I2C 400KHZ 8MSOP
Description: IC EEPROM 8KBIT I2C 400KHZ 8MSOP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BR24S08F-WE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOP
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOP
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SFR01MZPF2323 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 1.06 грн |
| SFR01MZPF2323 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 9.52 грн |
| 36+ | 8.70 грн |
| 100+ | 3.34 грн |
| 1000+ | 1.38 грн |
| 2500+ | 1.19 грн |
| 5000+ | 1.06 грн |
| BD63801EFV-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 24HTSSOP
Step Resolution: 1, 1/2
Motor Type - Stepper: Bipolar
Supplier Device Package: 24-HTSSOP-B
Voltage - Load: 19V ~ 28V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 19V ~ 28V
Output Configuration: Half Bridge (4)
Operating Temperature: -25°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 500mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MTR DRV BIPLR 19-28V 24HTSSOP
Step Resolution: 1, 1/2
Motor Type - Stepper: Bipolar
Supplier Device Package: 24-HTSSOP-B
Voltage - Load: 19V ~ 28V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 19V ~ 28V
Output Configuration: Half Bridge (4)
Operating Temperature: -25°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 500mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 157.13 грн |
| BD63801EFV-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 24HTSSOP
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Step Resolution: 1, 1/2
Motor Type - Stepper: Bipolar
Supplier Device Package: 24-HTSSOP-B
Voltage - Load: 19V ~ 28V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 19V ~ 28V
Output Configuration: Half Bridge (4)
Operating Temperature: -25°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 500mA
Description: IC MTR DRV BIPLR 19-28V 24HTSSOP
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Step Resolution: 1, 1/2
Motor Type - Stepper: Bipolar
Supplier Device Package: 24-HTSSOP-B
Voltage - Load: 19V ~ 28V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 19V ~ 28V
Output Configuration: Half Bridge (4)
Operating Temperature: -25°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 500mA
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 310.04 грн |
| 10+ | 226.70 грн |
| 25+ | 208.82 грн |
| 100+ | 177.45 грн |
| 250+ | 168.63 грн |
| 500+ | 163.31 грн |
| 1000+ | 156.33 грн |
| RXL035N03TCR |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 30V 3..5A SMALL SIGNAL MOSFE
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 910mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Description: NCH 30V 3..5A SMALL SIGNAL MOSFE
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 910mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.33 грн |
| 10+ | 53.30 грн |
| 100+ | 34.97 грн |
| 500+ | 25.47 грн |
| 1000+ | 23.10 грн |
| RTM002P02T2L |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA VMT3
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Description: MOSFET P-CH 20V 200MA VMT3
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 150mW (Ta)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 9.01 грн |
| VT6Z1T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 20V 0.2A 6VMT
Description: TRANS NPN/PNP 20V 0.2A 6VMT
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 7.81 грн |
| VT6Z1T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 20V 0.2A 6VMT
Description: TRANS NPN/PNP 20V 0.2A 6VMT
на замовлення 15924 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.27 грн |
| 12+ | 26.95 грн |
| 100+ | 16.81 грн |
| 500+ | 10.79 грн |
| 1000+ | 8.30 грн |
| 2000+ | 7.47 грн |
| QH8KA3TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 9A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| QH8KA3TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 9A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 2305 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.12 грн |
| 10+ | 62.23 грн |
| 100+ | 44.45 грн |
| 500+ | 32.11 грн |
| 1000+ | 28.26 грн |
| QH8KB6TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 8A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 8A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 33.08 грн |
| QH8KB6TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 8A TSMT8
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 40V
Description: MOSFET 2N-CH 40V 8A TSMT8
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 40V
на замовлення 5950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.09 грн |
| 10+ | 62.99 грн |
| 100+ | 49.01 грн |
| 500+ | 38.98 грн |
| 1000+ | 31.75 грн |
| QH8JC5TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 36.41 грн |
| 9000+ | 31.49 грн |
| QH8JC5TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 57658 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.00 грн |
| 10+ | 81.85 грн |
| 50+ | 61.56 грн |
| 100+ | 51.61 грн |
| 500+ | 40.80 грн |


































