Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (101978) > Сторінка 916 з 1700
| Фото | Назва | Виробник | Інформація |
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BR24G02FJ-3GTE2 | Rohm Semiconductor |
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BR24G02FJ-3GTE2 | Rohm Semiconductor |
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS84WT106 | Rohm Semiconductor |
Description: PCH -60V -0.21A, SOT-323, SMALLPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 210mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: UMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS84WT106 | Rohm Semiconductor |
Description: PCH -60V -0.21A, SOT-323, SMALLPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 210mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: UMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V |
на замовлення 114 шт: термін постачання 21-31 дні (днів) |
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SFR18EZPJ200 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS :Power (Watts): 0.25W, 1/4W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Tape & Reel (TR) Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Resistance: 20 Ohms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SFR18EZPJ200 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS :Power (Watts): 0.25W, 1/4W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Cut Tape (CT) Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Resistance: 20 Ohms |
на замовлення 9890 шт: термін постачання 21-31 дні (днів) |
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BSS138WT106 | Rohm Semiconductor |
Description: NCH 60V 310MA, SOT-323, SMALL SIPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 310mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: UMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS138WT106 | Rohm Semiconductor |
Description: NCH 60V 310MA, SOT-323, SMALL SIPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 310mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: UMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 30 V |
на замовлення 117 шт: термін постачання 21-31 дні (днів) |
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2SC5658FHAT2LR | Rohm Semiconductor |
Description: TRANS NPN 50V 0.15A VMT3Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: VMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
на замовлення 7736 шт: термін постачання 21-31 дні (днів) |
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CSL1901UW1 | Rohm Semiconductor |
Description: LED RED DIFFUSED 0603 SMDPackaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Red Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 6mcd Voltage - Forward (Vf) (Typ): 1.8V Lens Color: White Current - Test: 2mA Height (Max): 0.65mm Wavelength - Dominant: 620nm Supplier Device Package: 0603 Lens Transparency: Diffused Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.10mm x 0.80mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CSL1901UW1 | Rohm Semiconductor |
Description: LED RED DIFFUSED 0603 SMDPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Red Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 6mcd Voltage - Forward (Vf) (Typ): 1.8V Lens Color: White Current - Test: 2mA Height (Max): 0.65mm Wavelength - Dominant: 620nm Supplier Device Package: 0603 Lens Transparency: Diffused Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.10mm x 0.80mm |
на замовлення 2786 шт: термін постачання 21-31 дні (днів) |
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UMH37NTN | Rohm Semiconductor |
Description: NPN+NPN, SOT-363, DUAL DIGITAL TPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V Frequency - Transition: 35MHz Resistor - Base (R1): 10kOhms Supplier Device Package: UMT6 |
на замовлення 2650 шт: термін постачання 21-31 дні (днів) |
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UMH33NTN | Rohm Semiconductor |
Description: NPN+NPN, SOT-363, DUAL DIGITAL TPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V Frequency - Transition: 35MHz Resistor - Base (R1): 2.2kOhms Supplier Device Package: UMT6 |
на замовлення 2655 шт: термін постачання 21-31 дні (днів) |
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CDZVT2R24B | Rohm Semiconductor |
Description: DIODE ZENER 24V 100MW VMN2MTolerance: ±2.21% Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 120 Ohms Supplier Device Package: VMN2M (SOD-923) Power - Max: 100 mW Current - Reverse Leakage @ Vr: 100 nA @ 19 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CDZVT2R24B | Rohm Semiconductor |
Description: DIODE ZENER 24V 100MW VMN2MTolerance: ±2.21% Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 120 Ohms Supplier Device Package: VMN2M (SOD-923) Power - Max: 100 mW Current - Reverse Leakage @ Vr: 100 nA @ 19 V |
на замовлення 6460 шт: термін постачання 21-31 дні (днів) |
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KDZLVTR75 | Rohm Semiconductor |
Description: DIODE ZENER 75V 1W PMDU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KDZLVTR75 | Rohm Semiconductor |
Description: DIODE ZENER 75V 1W PMDU |
на замовлення 2745 шт: термін постачання 21-31 дні (днів) |
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PDZVTR8.2B | Rohm Semiconductor |
Description: DIODE ZENER 8.75V 1W PMDTM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PDZVTR8.2B | Rohm Semiconductor |
Description: DIODE ZENER 8.75V 1W PMDTM |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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KDZLVTR68 | Rohm Semiconductor |
Description: DIODE ZENER 68V 1W PMDUPackaging: Tape & Reel (TR) Tolerance: ±5.88% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 68 V Impedance (Max) (Zzt): 230 Ohms Supplier Device Package: PMDU Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 52 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KDZLVTR68 | Rohm Semiconductor |
Description: DIODE ZENER 68V 1W PMDUPackaging: Cut Tape (CT) Tolerance: ±5.88% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 68 V Impedance (Max) (Zzt): 230 Ohms Supplier Device Package: PMDU Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 52 V |
на замовлення 2899 шт: термін постачання 21-31 дні (днів) |
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RD3U080AAFRATL | Rohm Semiconductor |
Description: 250V 8A TO-252, AUTOMOTIVE POWERPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RD3U080AAFRATL | Rohm Semiconductor |
Description: 250V 8A TO-252, AUTOMOTIVE POWERPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V |
на замовлення 1740 шт: термін постачання 21-31 дні (днів) |
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R6504END3TL1 | Rohm Semiconductor |
Description: 650V 4A TO-252, LOW-NOISE POWERPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4V @ 130µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R6504END3TL1 | Rohm Semiconductor |
Description: 650V 4A TO-252, LOW-NOISE POWERPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4V @ 130µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V |
на замовлення 1246 шт: термін постачання 21-31 дні (днів) |
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R5205PND3FRATL | Rohm Semiconductor |
Description: 525V 5A TO-252, AUTOMOTIVE POWERPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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R5205PND3FRATL | Rohm Semiconductor |
Description: 525V 5A TO-252, AUTOMOTIVE POWERPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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2SC4617E3HZGTLQ | Rohm Semiconductor |
Description: TRANS NPN 50V 0.15A EMT3Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC4617E3HZGTLQ | Rohm Semiconductor |
Description: TRANS NPN 50V 0.15A EMT3Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
на замовлення 2614 шт: термін постачання 21-31 дні (днів) |
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DTC114EE3HZGTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTC114EE3HZGTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 3064 шт: термін постачання 21-31 дні (днів) |
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BD4269UEFJ-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR 5V 300MA 8-HTSOP-JPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 5V Control Features: Reset Part Status: Active Voltage Dropout (Max): 0.5V @ 100mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Current - Supply (Max): 150 µA |
на замовлення 2253 шт: термін постачання 21-31 дні (днів) |
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BD4271EFJ-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR 5V 550MA 8-HTSOP-JPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 550mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 5V Control Features: Enable, Reset, Watchdog Grade: Automotive Part Status: Active PSRR: 60dB (120Hz) Voltage Dropout (Max): 0.5V @ 300mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD4271EFJ-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR 5V 550MA 8-HTSOP-JPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 550mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 5V Control Features: Enable, Reset, Watchdog Grade: Automotive Part Status: Active PSRR: 60dB (120Hz) Voltage Dropout (Max): 0.5V @ 300mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Qualification: AEC-Q100 |
на замовлення 3041 шт: термін постачання 21-31 дні (днів) |
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BD433U2WEFJ-CE2 | Rohm Semiconductor |
Description: IC REG LIN 3.3V 200MA 8-HTSOP-JPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 65dB (120Hz) Voltage Dropout (Max): 0.35V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 150 µA |
на замовлення 5951 шт: термін постачання 21-31 дні (днів) |
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BD450U2EFJ-CE2 | Rohm Semiconductor |
Description: 200MA 5.0V OUTPUT LDO REGULATORSPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 65dB (120Hz) Voltage Dropout (Max): 0.35V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 150 µA |
на замовлення 1815 шт: термін постачання 21-31 дні (днів) |
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BD450U2WEFJ-CE2 | Rohm Semiconductor |
Description: 200MA 5.0V OUTPUT LDO REGULATORSPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 5V Control Features: Enable Part Status: Active PSRR: 65dB (120Hz) Voltage Dropout (Max): 0.35V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 150 µA |
на замовлення 2475 шт: термін постачання 21-31 дні (днів) |
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SFR10EZPF1602 | Rohm Semiconductor |
Description: RES 16 KOHM 1% 1/8W 0805 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BR24H32FJ-5ACE2 | Rohm Semiconductor |
Description: IC EEPROM 32KBIT I2C 1MHZ 8SOPJPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Grade: Automotive Write Cycle Time - Word, Page: 3.5ms Memory Interface: I2C Memory Organization: 4K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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BD820F5UEFJ-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR 5V 200MA 8-HTSOP-JPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 5V Control Features: Inhibit, Reset, Watchdog Part Status: Active PSRR: 70dB (120Hz) Voltage Dropout (Max): 0.8V @ 200mA Protection Features: Over Current, Over Temperature |
на замовлення 2487 шт: термін постачання 21-31 дні (днів) |
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RD3L08BGNTL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 80A TO252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RD3L08BGNTL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 80A TO252 |
на замовлення 1055 шт: термін постачання 21-31 дні (днів) |
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RS1L145GNTB | Rohm Semiconductor |
Description: MOSFET N-CH 60V 14.5A/47A 8HSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS1L145GNTB | Rohm Semiconductor |
Description: MOSFET N-CH 60V 14.5A/47A 8HSOP |
на замовлення 1391 шт: термін постачання 21-31 дні (днів) |
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| ML610Q172-111GAZWAX | Rohm Semiconductor |
Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RGW50TK65GVC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 30A TO-3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 35ns/102ns Switching Energy: 390µJ (on), 430µJ (off) Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 73 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 100 A Power - Max: 67 W |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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RB706W-40TL | Rohm Semiconductor |
Description: 40V, 30MA, SOT-416, SCHOTTKY BAR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB706W-40TL | Rohm Semiconductor |
Description: 40V, 30MA, SOT-416, SCHOTTKY BAR |
на замовлення 2834 шт: термін постачання 21-31 дні (днів) |
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RLD90QZW3-00A | Rohm Semiconductor |
Description: 905NM, 75W, 225M INVISIBLE PULSEPower (Watts): 90W Packaging: Tray Package / Case: Radial, Can - 3 Lead Wavelength: 905nm Current Rating (Amps): 30A Voltage - Input: 16V Part Status: Active |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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RLD90QZW5-10A | Rohm Semiconductor |
Description: 905NM, 25W, 70M INVISIBLE PULSEDPower (Watts): 25W Packaging: Tray Package / Case: Radial, Can - 3 Lead Wavelength: 905nm Current Rating (Amps): 1A Voltage - Input: 20V Part Status: Active |
на замовлення 171 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPJ621 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPJ621 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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RRE07VTM6SFHTR | Rohm Semiconductor |
Description: RECTIFIER DIODES (CORRESPONDS TO |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RRE07VTM6SFHTR | Rohm Semiconductor |
Description: RECTIFIER DIODES (CORRESPONDS TO |
на замовлення 9488 шт: термін постачання 21-31 дні (днів) |
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RRE07VTM4SFHTR | Rohm Semiconductor |
Description: RECTIFIER DIODES (CORRESPONDS TO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RRE07VTM4SFHTR | Rohm Semiconductor |
Description: RECTIFIER DIODES (CORRESPONDS TO |
на замовлення 504 шт: термін постачання 21-31 дні (днів) |
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RRE02VTM6SFHTR | Rohm Semiconductor |
Description: RECTIFIER DIODES (CORRESPONDS TO |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RRE02VTM6SFHTR | Rohm Semiconductor |
Description: RECTIFIER DIODES (CORRESPONDS TO |
на замовлення 5594 шт: термін постачання 21-31 дні (днів) |
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RGWS60TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 51A TO247GPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 88 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-247G IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 32ns/91ns Switching Energy: 500µJ (on), 450µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 58 nC Current - Collector (Ic) (Max): 51 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 156 W |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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RGW60TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 64A TO-247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 87 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 36ns/107ns Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 84 nC Current - Collector (Ic) (Max): 64 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 178 W |
на замовлення 380 шт: термін постачання 21-31 дні (днів) |
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| BR24G02FJ-3GTE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPJ
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPJ
товару немає в наявності
В кошику
од. на суму грн.
| BR24G02FJ-3GTE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPJ
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPJ
товару немає в наявності
В кошику
од. на суму грн.
| BSS84WT106 |
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Виробник: Rohm Semiconductor
Description: PCH -60V -0.21A, SOT-323, SMALL
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 210mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
Description: PCH -60V -0.21A, SOT-323, SMALL
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 210mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| BSS84WT106 |
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Виробник: Rohm Semiconductor
Description: PCH -60V -0.21A, SOT-323, SMALL
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 210mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
Description: PCH -60V -0.21A, SOT-323, SMALL
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 210mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
на замовлення 114 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.81 грн |
| 23+ | 14.67 грн |
| 100+ | 9.20 грн |
| SFR18EZPJ200 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 20 Ohms
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 20 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 1.69 грн |
| SFR18EZPJ200 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 20 Ohms
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 20 Ohms
на замовлення 9890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.55 грн |
| 28+ | 11.87 грн |
| 53+ | 6.28 грн |
| 100+ | 4.37 грн |
| 500+ | 2.64 грн |
| 1000+ | 1.83 грн |
| BSS138WT106 |
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Виробник: Rohm Semiconductor
Description: NCH 60V 310MA, SOT-323, SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 310mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 30 V
Description: NCH 60V 310MA, SOT-323, SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 310mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| BSS138WT106 |
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Виробник: Rohm Semiconductor
Description: NCH 60V 310MA, SOT-323, SMALL SI
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 310mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 30 V
Description: NCH 60V 310MA, SOT-323, SMALL SI
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 310mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 30 V
на замовлення 117 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.81 грн |
| 23+ | 14.50 грн |
| 100+ | 9.06 грн |
| 2SC5658FHAT2LR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: TRANS NPN 50V 0.15A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
на замовлення 7736 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.67 грн |
| 23+ | 14.91 грн |
| 100+ | 9.39 грн |
| 500+ | 6.53 грн |
| 1000+ | 5.80 грн |
| 2000+ | 5.17 грн |
| CSL1901UW1 |
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Виробник: Rohm Semiconductor
Description: LED RED DIFFUSED 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 6mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
Description: LED RED DIFFUSED 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 6mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
товару немає в наявності
В кошику
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| CSL1901UW1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED RED DIFFUSED 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 6mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
Description: LED RED DIFFUSED 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 6mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
на замовлення 2786 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 28.24 грн |
| 21+ | 15.90 грн |
| 100+ | 10.18 грн |
| 500+ | 7.44 грн |
| 1000+ | 6.80 грн |
| 2000+ | 6.43 грн |
| UMH37NTN |
![]() |
Виробник: Rohm Semiconductor
Description: NPN+NPN, SOT-363, DUAL DIGITAL T
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V
Frequency - Transition: 35MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
Description: NPN+NPN, SOT-363, DUAL DIGITAL T
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V
Frequency - Transition: 35MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
на замовлення 2650 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 65.03 грн |
| 10+ | 39.06 грн |
| 100+ | 25.26 грн |
| 500+ | 18.11 грн |
| 1000+ | 16.30 грн |
| UMH33NTN |
![]() |
Виробник: Rohm Semiconductor
Description: NPN+NPN, SOT-363, DUAL DIGITAL T
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V
Frequency - Transition: 35MHz
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: UMT6
Description: NPN+NPN, SOT-363, DUAL DIGITAL T
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V
Frequency - Transition: 35MHz
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: UMT6
на замовлення 2655 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 65.03 грн |
| 10+ | 39.06 грн |
| 100+ | 25.26 грн |
| 500+ | 18.11 грн |
| 1000+ | 16.30 грн |
| CDZVT2R24B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 24V 100MW VMN2M
Tolerance: ±2.21%
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: VMN2M (SOD-923)
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Description: DIODE ZENER 24V 100MW VMN2M
Tolerance: ±2.21%
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: VMN2M (SOD-923)
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
товару немає в наявності
В кошику
од. на суму грн.
| CDZVT2R24B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 24V 100MW VMN2M
Tolerance: ±2.21%
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: VMN2M (SOD-923)
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Description: DIODE ZENER 24V 100MW VMN2M
Tolerance: ±2.21%
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: VMN2M (SOD-923)
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
на замовлення 6460 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.69 грн |
| 39+ | 8.49 грн |
| 100+ | 5.67 грн |
| 500+ | 3.88 грн |
| 1000+ | 3.36 грн |
| 2000+ | 2.68 грн |
| KDZLVTR75 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 75V 1W PMDU
Description: DIODE ZENER 75V 1W PMDU
товару немає в наявності
В кошику
од. на суму грн.
| KDZLVTR75 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 75V 1W PMDU
Description: DIODE ZENER 75V 1W PMDU
на замовлення 2745 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 41.93 грн |
| 11+ | 32.38 грн |
| 100+ | 22.05 грн |
| 500+ | 15.52 грн |
| 1000+ | 11.64 грн |
| PDZVTR8.2B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 8.75V 1W PMDTM
Description: DIODE ZENER 8.75V 1W PMDTM
товару немає в наявності
В кошику
од. на суму грн.
| PDZVTR8.2B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 8.75V 1W PMDTM
Description: DIODE ZENER 8.75V 1W PMDTM
на замовлення 6 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| KDZLVTR68 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 68V 1W PMDU
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 52 V
Description: DIODE ZENER 68V 1W PMDU
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 52 V
товару немає в наявності
В кошику
од. на суму грн.
| KDZLVTR68 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 68V 1W PMDU
Packaging: Cut Tape (CT)
Tolerance: ±5.88%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 52 V
Description: DIODE ZENER 68V 1W PMDU
Packaging: Cut Tape (CT)
Tolerance: ±5.88%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 52 V
на замовлення 2899 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.23 грн |
| 13+ | 25.87 грн |
| 100+ | 15.50 грн |
| 500+ | 13.47 грн |
| 1000+ | 9.16 грн |
| RD3U080AAFRATL |
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Виробник: Rohm Semiconductor
Description: 250V 8A TO-252, AUTOMOTIVE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Description: 250V 8A TO-252, AUTOMOTIVE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| RD3U080AAFRATL |
![]() |
Виробник: Rohm Semiconductor
Description: 250V 8A TO-252, AUTOMOTIVE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Description: 250V 8A TO-252, AUTOMOTIVE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
на замовлення 1740 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 184.82 грн |
| 10+ | 159.93 грн |
| 100+ | 128.53 грн |
| 500+ | 99.10 грн |
| 1000+ | 82.47 грн |
| R6504END3TL1 |
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Виробник: Rohm Semiconductor
Description: 650V 4A TO-252, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Description: 650V 4A TO-252, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| R6504END3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 650V 4A TO-252, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Description: 650V 4A TO-252, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
на замовлення 1246 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 153.16 грн |
| 10+ | 91.54 грн |
| 100+ | 67.99 грн |
| 500+ | 54.18 грн |
| 1000+ | 49.82 грн |
| R5205PND3FRATL |
![]() |
Виробник: Rohm Semiconductor
Description: 525V 5A TO-252, AUTOMOTIVE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
Description: 525V 5A TO-252, AUTOMOTIVE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 89.27 грн |
| R5205PND3FRATL |
![]() |
Виробник: Rohm Semiconductor
Description: 525V 5A TO-252, AUTOMOTIVE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
Description: 525V 5A TO-252, AUTOMOTIVE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 195.09 грн |
| 10+ | 168.75 грн |
| 100+ | 135.63 грн |
| 500+ | 104.58 грн |
| 1000+ | 86.65 грн |
| 2SC4617E3HZGTLQ |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: TRANS NPN 50V 0.15A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| 2SC4617E3HZGTLQ |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: TRANS NPN 50V 0.15A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
на замовлення 2614 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.39 грн |
| 27+ | 12.52 грн |
| 100+ | 7.82 грн |
| 500+ | 5.41 грн |
| 1000+ | 4.78 грн |
| DTC114EE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.66 грн |
| DTC114EE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 3064 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 22.25 грн |
| 25+ | 13.18 грн |
| 100+ | 8.22 грн |
| 500+ | 5.70 грн |
| 1000+ | 5.04 грн |
| BD4269UEFJ-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 300MA 8-HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 150 µA
Description: IC REG LINEAR 5V 300MA 8-HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 150 µA
на замовлення 2253 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 112.09 грн |
| 10+ | 79.10 грн |
| 25+ | 71.78 грн |
| 100+ | 59.84 грн |
| 250+ | 56.24 грн |
| 500+ | 54.07 грн |
| 1000+ | 51.43 грн |
| BD4271EFJ-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 550MA 8-HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 550mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 550MA 8-HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 550mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| BD4271EFJ-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 550MA 8-HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 550mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 550MA 8-HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 550mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Qualification: AEC-Q100
на замовлення 3041 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 231.88 грн |
| 10+ | 140.98 грн |
| 25+ | 119.51 грн |
| 100+ | 89.43 грн |
| 250+ | 78.26 грн |
| 500+ | 71.40 грн |
| 1000+ | 64.57 грн |
| BD433U2WEFJ-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 3.3V 200MA 8-HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.35V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 150 µA
Description: IC REG LIN 3.3V 200MA 8-HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.35V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 150 µA
на замовлення 5951 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.28 грн |
| 10+ | 60.97 грн |
| 25+ | 55.21 грн |
| 100+ | 45.80 грн |
| 250+ | 42.94 грн |
| 500+ | 41.22 грн |
| 1000+ | 39.15 грн |
| BD450U2EFJ-CE2 |
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Виробник: Rohm Semiconductor
Description: 200MA 5.0V OUTPUT LDO REGULATORS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.35V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 150 µA
Description: 200MA 5.0V OUTPUT LDO REGULATORS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.35V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 150 µA
на замовлення 1815 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 111.24 грн |
| 10+ | 95.83 грн |
| 25+ | 90.97 грн |
| 100+ | 70.14 грн |
| 250+ | 65.56 грн |
| 500+ | 57.94 грн |
| 1000+ | 44.99 грн |
| BD450U2WEFJ-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: 200MA 5.0V OUTPUT LDO REGULATORS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.35V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 150 µA
Description: 200MA 5.0V OUTPUT LDO REGULATORS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.35V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 150 µA
на замовлення 2475 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 111.24 грн |
| 10+ | 95.83 грн |
| 25+ | 90.97 грн |
| 100+ | 70.14 грн |
| 250+ | 65.56 грн |
| 500+ | 57.94 грн |
| 1000+ | 44.99 грн |
| SFR10EZPF1602 |
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Виробник: Rohm Semiconductor
Description: RES 16 KOHM 1% 1/8W 0805
Description: RES 16 KOHM 1% 1/8W 0805
товару немає в наявності
В кошику
од. на суму грн.
| BR24H32FJ-5ACE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 32KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 33.03 грн |
| 5000+ | 31.52 грн |
| BD820F5UEFJ-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 200MA 8-HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 0.8V @ 200mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 5V 200MA 8-HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 0.8V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 2487 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 271.24 грн |
| 10+ | 166.52 грн |
| 25+ | 141.79 грн |
| 100+ | 106.80 грн |
| 250+ | 93.90 грн |
| 500+ | 85.96 грн |
| 1000+ | 78.01 грн |
| RD3L08BGNTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 80A TO252
Description: MOSFET N-CH 60V 80A TO252
товару немає в наявності
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од. на суму грн.
| RD3L08BGNTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 80A TO252
Description: MOSFET N-CH 60V 80A TO252
на замовлення 1055 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 249.00 грн |
| 10+ | 215.30 грн |
| 100+ | 173.03 грн |
| 500+ | 133.42 грн |
| 1000+ | 110.55 грн |
| RS1L145GNTB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 14.5A/47A 8HSOP
Description: MOSFET N-CH 60V 14.5A/47A 8HSOP
товару немає в наявності
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од. на суму грн.
| RS1L145GNTB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 14.5A/47A 8HSOP
Description: MOSFET N-CH 60V 14.5A/47A 8HSOP
на замовлення 1391 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 195.95 грн |
| 10+ | 169.41 грн |
| 100+ | 136.21 грн |
| 500+ | 105.03 грн |
| 1000+ | 87.02 грн |
| ML610Q172-111GAZWAX |
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Виробник: Rohm Semiconductor
Description: IC
Description: IC
товару немає в наявності
В кошику
од. на суму грн.
| RGW50TK65GVC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 30A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/102ns
Switching Energy: 390µJ (on), 430µJ (off)
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 73 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 67 W
Description: IGBT TRENCH FS 650V 30A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/102ns
Switching Energy: 390µJ (on), 430µJ (off)
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 73 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 67 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 491.15 грн |
| 30+ | 268.75 грн |
| 120+ | 223.92 грн |
| RB706W-40TL |
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Виробник: Rohm Semiconductor
Description: 40V, 30MA, SOT-416, SCHOTTKY BAR
Description: 40V, 30MA, SOT-416, SCHOTTKY BAR
товару немає в наявності
В кошику
од. на суму грн.
| RB706W-40TL |
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Виробник: Rohm Semiconductor
Description: 40V, 30MA, SOT-416, SCHOTTKY BAR
Description: 40V, 30MA, SOT-416, SCHOTTKY BAR
на замовлення 2834 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.78 грн |
| 10+ | 35.10 грн |
| 100+ | 26.24 грн |
| 500+ | 19.35 грн |
| 1000+ | 14.95 грн |
| RLD90QZW3-00A |
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Виробник: Rohm Semiconductor
Description: 905NM, 75W, 225M INVISIBLE PULSE
Power (Watts): 90W
Packaging: Tray
Package / Case: Radial, Can - 3 Lead
Wavelength: 905nm
Current Rating (Amps): 30A
Voltage - Input: 16V
Part Status: Active
Description: 905NM, 75W, 225M INVISIBLE PULSE
Power (Watts): 90W
Packaging: Tray
Package / Case: Radial, Can - 3 Lead
Wavelength: 905nm
Current Rating (Amps): 30A
Voltage - Input: 16V
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6745.18 грн |
| RLD90QZW5-10A |
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Виробник: Rohm Semiconductor
Description: 905NM, 25W, 70M INVISIBLE PULSED
Power (Watts): 25W
Packaging: Tray
Package / Case: Radial, Can - 3 Lead
Wavelength: 905nm
Current Rating (Amps): 1A
Voltage - Input: 20V
Part Status: Active
Description: 905NM, 25W, 70M INVISIBLE PULSED
Power (Watts): 25W
Packaging: Tray
Package / Case: Radial, Can - 3 Lead
Wavelength: 905nm
Current Rating (Amps): 1A
Voltage - Input: 20V
Part Status: Active
на замовлення 171 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4801.12 грн |
| 10+ | 3830.72 грн |
| 80+ | 3696.32 грн |
| SFR01MZPJ621 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.01 грн |
| SFR01MZPJ621 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 9.41 грн |
| 40+ | 8.24 грн |
| 104+ | 3.19 грн |
| 1000+ | 1.32 грн |
| 2500+ | 1.14 грн |
| 5000+ | 1.02 грн |
| RRE07VTM6SFHTR |
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Виробник: Rohm Semiconductor
Description: RECTIFIER DIODES (CORRESPONDS TO
Description: RECTIFIER DIODES (CORRESPONDS TO
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.10 грн |
| 6000+ | 8.28 грн |
| RRE07VTM6SFHTR |
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Виробник: Rohm Semiconductor
Description: RECTIFIER DIODES (CORRESPONDS TO
Description: RECTIFIER DIODES (CORRESPONDS TO
на замовлення 9488 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 41.07 грн |
| 12+ | 29.75 грн |
| 100+ | 18.51 грн |
| 500+ | 11.88 грн |
| 1000+ | 9.14 грн |
| RRE07VTM4SFHTR |
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Виробник: Rohm Semiconductor
Description: RECTIFIER DIODES (CORRESPONDS TO
Description: RECTIFIER DIODES (CORRESPONDS TO
товару немає в наявності
В кошику
од. на суму грн.
| RRE07VTM4SFHTR |
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Виробник: Rohm Semiconductor
Description: RECTIFIER DIODES (CORRESPONDS TO
Description: RECTIFIER DIODES (CORRESPONDS TO
на замовлення 504 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 37.65 грн |
| 13+ | 26.86 грн |
| 100+ | 16.76 грн |
| 500+ | 10.76 грн |
| RRE02VTM6SFHTR |
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Виробник: Rohm Semiconductor
Description: RECTIFIER DIODES (CORRESPONDS TO
Description: RECTIFIER DIODES (CORRESPONDS TO
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.90 грн |
| RRE02VTM6SFHTR |
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Виробник: Rohm Semiconductor
Description: RECTIFIER DIODES (CORRESPONDS TO
Description: RECTIFIER DIODES (CORRESPONDS TO
на замовлення 5594 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.94 грн |
| 13+ | 25.79 грн |
| 100+ | 16.06 грн |
| 500+ | 10.31 грн |
| 1000+ | 7.93 грн |
| RGWS60TS65DGC13 |
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Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 51A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/91ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 156 W
Description: IGBT TRNCH FIELD 650V 51A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/91ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 156 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 505.70 грн |
| 30+ | 278.23 грн |
| 120+ | 232.19 грн |
| 510+ | 186.16 грн |
| RGW60TS65DHRC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 64A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/107ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
Description: IGBT TRENCH FS 650V 64A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/107ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
на замовлення 380 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 568.16 грн |
| 10+ | 371.69 грн |



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