Результат пошуку "100n03" : 99
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Вид перегляду :
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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STP100N03L-03 |
на замовлення 50000 шт: термін постачання 14-28 дні (днів) |
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UT100N03L |
на замовлення 5000 шт: термін постачання 14-28 дні (днів) |
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SPD100N03S2L Код товару: 56344 |
Транзистори > Польові N-канальні |
товар відсутній
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UT100N03L Код товару: 85813 |
Транзистори > Польові N-канальні |
товар відсутній
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311100N03 | C&K | Thumbwheel Switches & Pushwheel Switches Thumbwheel |
товар відсутній |
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312100N03 | C&K | Switch Thumb-Pushwheel Thumbwheel BCD 10 0.1A 120VAC 28VDC Solder Pins Panel Mount/Through Hole |
товар відсутній |
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50M060100N030 | Essentra | Screws & Fasteners Pan Slotted Screw, M6 X 1 Thread, 30mm Lg, Natural, Nylon |
товар відсутній |
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50M060100N035 | Essentra | Screws & Fasteners Pan Slotted Screw, M6 X 1 Thread, 35mm Lg, Natural, Nylon |
товар відсутній |
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BSC100N03LS G | Infineon Technologies | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP |
товар відсутній |
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BSC100N03LSGATMA1 | Infineon Technologies | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R |
товар відсутній |
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BSC100N03LSGXT | Infineon Technologies | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R |
товар відсутній |
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BSC100N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Pulsed drain current: 176A Power dissipation: 30W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 5.8nC Kind of channel: enhanced Features of semiconductor devices: logic level |
товар відсутній |
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BSC100N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Pulsed drain current: 176A Power dissipation: 30W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 5.8nC Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
товар відсутній |
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BSZ100N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 36A Power dissipation: 30W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
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BSZ100N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 36A Power dissipation: 30W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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BSZ100N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 39A Power dissipation: 30W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
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BSZ100N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 39A Power dissipation: 30W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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MCAC100N03Y-TP | Micro Commercial Components (MCC) | MOSFET N-CHANNEL MOSFET, DFN5060 |
товар відсутній |
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RSS100N03HZGTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10A Pulsed drain current: 40A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 18.9mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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RSS100N03HZGTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10A Pulsed drain current: 40A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 18.9mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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SQD100N03-3M2L-GE3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT SQD100N033M2L_GE3 |
товар відсутній |
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SQD100N03-3M2L_GE3 | Vishay | Trans MOSFET N-CH 30V 100A Automotive 3-Pin(2+Tab) TO-252AA |
товар відсутній |
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SQD100N03-3M4_GE3 | Vishay | Automotive N-Channel 30 V (D-S) 175 C MOSFET |
товар відсутній |
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TK 100N 03 1,35 S 280 N | TEKON |
Category: Contact Probes Description: Test needle; Operational spring compression: 3.4mm; 3A; TK100N Type of test accessories: test needle Operational spring compression: 3.4mm Maksimum spring compression: 4.2mm Minimum pitch: 2.54mm Current rating: 3A Contact plating: nickel plated Max. contact resistance:: 55mΩ Contact material: steel Blade tip shape: head 03 Related items: TK100N кількість в упаковці: 1 шт |
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IAUC100N08S5N031ATMA1 | Infineon Technologies | N Channel Power MOSFET |
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IAUC100N08S5N034ATMA1 | Infineon Technologies | SP005423080 |
товар відсутній |
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XM-C391-0204C | Quantic X-Microwave | Attenuators Temp Variable, MTVA0100N03W3SMT |
товар відсутній |
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XM-C391-0204D | Quantic X-Microwave | Attenuators Temp Variable, MTVA0100N03W3SMT |
товар відсутній |
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XM-C5N4-0204C | Quantic X-Microwave | Attenuators Temp Variable, TVA0100N03W3SMT |
товар відсутній |
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XM-C5N4-0204D | Quantic X-Microwave | Attenuators Temp Variable, TVA0100N03W3SMT |
товар відсутній |
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XPEBGR-L1-0000-00N03 | Cree LED | High Power LEDs - Single Colour XLamp XP-E Light Emitting Diode Green |
товар відсутній |
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XPEBRY-L1-0000-00N03 | CREE LED (See account 19947) | LED Uni-Color Royal Blue Automotive 2-Pin SMD EP |
товар відсутній |
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XRCGRN-L1-0000-00N03 | CREE LED (See account 19947) | LED Uni-Color Green 2-Pin SMD EP |
товар відсутній |
312100N03 |
Виробник: C&K
Switch Thumb-Pushwheel Thumbwheel BCD 10 0.1A 120VAC 28VDC Solder Pins Panel Mount/Through Hole
Switch Thumb-Pushwheel Thumbwheel BCD 10 0.1A 120VAC 28VDC Solder Pins Panel Mount/Through Hole
товар відсутній
50M060100N030 |
Виробник: Essentra
Screws & Fasteners Pan Slotted Screw, M6 X 1 Thread, 30mm Lg, Natural, Nylon
Screws & Fasteners Pan Slotted Screw, M6 X 1 Thread, 30mm Lg, Natural, Nylon
товар відсутній
50M060100N035 |
Виробник: Essentra
Screws & Fasteners Pan Slotted Screw, M6 X 1 Thread, 35mm Lg, Natural, Nylon
Screws & Fasteners Pan Slotted Screw, M6 X 1 Thread, 35mm Lg, Natural, Nylon
товар відсутній
BSC100N03LS G |
Виробник: Infineon Technologies
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP
товар відсутній
BSC100N03LSGATMA1 |
Виробник: Infineon Technologies
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
товар відсутній
BSC100N03LSGXT |
Виробник: Infineon Technologies
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
товар відсутній
BSC100N03MSGATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 176A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 176A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
BSC100N03MSGATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 176A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 176A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
BSZ100N03LSGATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSZ100N03LSGATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
BSZ100N03MSGATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSZ100N03MSGATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
MCAC100N03Y-TP |
Виробник: Micro Commercial Components (MCC)
MOSFET N-CHANNEL MOSFET, DFN5060
MOSFET N-CHANNEL MOSFET, DFN5060
товар відсутній
RSS100N03HZGTB |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
RSS100N03HZGTB |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SQD100N03-3M2L-GE3 |
Виробник: Vishay / Siliconix
MOSFET RECOMMENDED ALT SQD100N033M2L_GE3
MOSFET RECOMMENDED ALT SQD100N033M2L_GE3
товар відсутній
SQD100N03-3M2L_GE3 |
Виробник: Vishay
Trans MOSFET N-CH 30V 100A Automotive 3-Pin(2+Tab) TO-252AA
Trans MOSFET N-CH 30V 100A Automotive 3-Pin(2+Tab) TO-252AA
товар відсутній
TK 100N 03 1,35 S 280 N |
Виробник: TEKON
Category: Contact Probes
Description: Test needle; Operational spring compression: 3.4mm; 3A; TK100N
Type of test accessories: test needle
Operational spring compression: 3.4mm
Maksimum spring compression: 4.2mm
Minimum pitch: 2.54mm
Current rating: 3A
Contact plating: nickel plated
Max. contact resistance:: 55mΩ
Contact material: steel
Blade tip shape: head 03
Related items: TK100N
кількість в упаковці: 1 шт
Category: Contact Probes
Description: Test needle; Operational spring compression: 3.4mm; 3A; TK100N
Type of test accessories: test needle
Operational spring compression: 3.4mm
Maksimum spring compression: 4.2mm
Minimum pitch: 2.54mm
Current rating: 3A
Contact plating: nickel plated
Max. contact resistance:: 55mΩ
Contact material: steel
Blade tip shape: head 03
Related items: TK100N
кількість в упаковці: 1 шт
товар відсутній
XM-C391-0204C |
Виробник: Quantic X-Microwave
Attenuators Temp Variable, MTVA0100N03W3SMT
Attenuators Temp Variable, MTVA0100N03W3SMT
товар відсутній
XM-C391-0204D |
Виробник: Quantic X-Microwave
Attenuators Temp Variable, MTVA0100N03W3SMT
Attenuators Temp Variable, MTVA0100N03W3SMT
товар відсутній
XM-C5N4-0204C |
Виробник: Quantic X-Microwave
Attenuators Temp Variable, TVA0100N03W3SMT
Attenuators Temp Variable, TVA0100N03W3SMT
товар відсутній
XM-C5N4-0204D |
Виробник: Quantic X-Microwave
Attenuators Temp Variable, TVA0100N03W3SMT
Attenuators Temp Variable, TVA0100N03W3SMT
товар відсутній
XPEBGR-L1-0000-00N03 |
Виробник: Cree LED
High Power LEDs - Single Colour XLamp XP-E Light Emitting Diode Green
High Power LEDs - Single Colour XLamp XP-E Light Emitting Diode Green
товар відсутній
XPEBRY-L1-0000-00N03 |
Виробник: CREE LED (See account 19947)
LED Uni-Color Royal Blue Automotive 2-Pin SMD EP
LED Uni-Color Royal Blue Automotive 2-Pin SMD EP
товар відсутній
XRCGRN-L1-0000-00N03 |
Виробник: CREE LED (See account 19947)
LED Uni-Color Green 2-Pin SMD EP
LED Uni-Color Green 2-Pin SMD EP
товар відсутній
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