Виробник: Siliconix
Транзистори > Польові P-канальні
Корпус: TO-220
Uds,V: 200 V
Id,A: 1,8 A
Rds(on),Om: 3,0 Ohm
Ciss, pF/Qg, nC: 170/11
Монтаж: THT

Виробник: IR/Infineon
Транзистори > Польові P-канальні
Корпус: TO-220
Uds,V: 200 V
Id,A: 1,8 A
Rds(on),Om: 3,0 Ohm
Ciss, pF/Qg, nC: 170/11
Монтаж: THT

Виробник: IR
Транзистори > Польові P-канальні
Корпус: TO-220
Uds,V: 200 V
Id,A: 3 А
Rds(on),Om: 2,4 Ohm
Ciss, pF/Qg, nC: 350/16
Монтаж: THT

Виробник: IR
Транзистори > Польові P-канальні
Корпус: TO-220
Uds,V: 200 V
Id,A: 11 А
Rds(on),Om: 0,5 Ohm
Ciss, pF/Qg, nC: 1200/44
Монтаж: THT

Виробник: Siliconix
Транзистори > Польові P-канальні
Корпус: TO-220AB
Uds,V: 200 V
Id,A: 11 А
Rds(on),Om: 0,05 Ohm
Ciss, pF/Qg, nC: 1200/44
Монтаж: THT

трансивер LoRa SX1276 маркований Hope RF

Виробник: TDK-LAMBDA
Category: Din Rail Mounting Power Supplies
Description: Power supply: switched-mode; for DIN rail; 960W; 24VDC; 40A; 95%
Power: 960W
Mounting: for DIN rail mounting
Manufacturer series: DRF
Output current: 40A
Operating temperature: -25...70°C
Efficiency: 95%
Supply voltage: 180...264V AC
Additional functions: adjustable output voltage
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Type of power supply: switched-mode
Indication: LED
Output voltage: 24V DC
Kind of power supply: for DIN rail
Body dimensions: 110x123.4x139mm
Electrical connection: terminal block

Виробник: TDK-LAMBDA
Category: Din Rail Mounting Power Supplies
Description: Power supply: switched-mode; for DIN rail; 960W; 24VDC; 40A; 95%
Power: 960W
Mounting: for DIN rail mounting
Manufacturer series: DRF
Output current: 40A
Operating temperature: -25...70°C
Efficiency: 95%
Supply voltage: 180...264V AC
Additional functions: adjustable output voltage
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Type of power supply: switched-mode
Indication: LED
Output voltage: 24V DC
Kind of power supply: for DIN rail
Body dimensions: 110x123.4x139mm
Electrical connection: terminal block
кількість в упаковці: 1 шт

Виробник: TDK-Lambda
DIN Rail Power Supplies AC-DC, DIN Rail, Input 230VAC, Output 24V 40A, 960W

Виробник: TDK-Lambda
Description: AC/DC DIN RAIL SUPPLY 24V 960W
Power (Watts): 960W
Features: Adjustable Output, Load Sharing, PFC, Remote On/Off, Universal Input
Packaging: Box
Size / Dimension: 5.47" L x 4.33" W x 4.86" H (139.0mm x 110.0mm x 123.4mm)
Operating Temperature: -25°C ~ 70°C (With Derating)
Applications: Industrial, ITE (Commercial)
Input Type: AC
Approval Agency: CE
Efficiency: 95%
Current - Output (Max): 40A
Voltage - Output 1: 24V
Part Status: Active
Number of Outputs: 1
Voltage - Isolation: 3 kV
AC Voltage - Input: 180 ~ 264 VAC

Виробник: International Rectifier/Infineon
P-канальний ПТ; Udss, В = -200; Id = -1,8; Ptot, Вт = 20; Тип монт. = вивідний; Ciss, пФ @ Uds, В = 170 @ -25; Qg, нКл = 11; Rds = 3 Ом; Tексп, °C = -55...+150; Ugs(th) = -3 В; TO-220

Виробник: Vishay
P-MOSFET 1.8A 200V 20W 3Ω IRF9610 TIRF9610
кількість в упаковці: 10 шт

Виробник: Siliconix
P-MOSFET 1.8A 200V 20W 3Ω IRF9610 TIRF9610
кількість в упаковці: 10 шт

Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; 20W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Power dissipation: 20W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced

Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; 20W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Power dissipation: 20W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт

Виробник: Vishay
Trans MOSFET P-CH 200V 1.8A 3-Pin(3+Tab) TO-220AB

Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 1.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V

Виробник: Vishay Semiconductors
MOSFETs TO220 200V 1.8A P-CH MOSFET

Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 1.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V

Виробник: Vishay / Siliconix
MOSFETs TO220 200V 1.8A P-CH MOSFET

Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 1.8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Power Dissipation (Max): 3W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V

Виробник: Vishay Semiconductors
MOSFETs TO263 200V 1.8A P-CH MOSFET

Виробник: Vishay / Siliconix
MOSFETs TO263 200V 1.8A N-CH MOSFET

Виробник: Siliconix
Transistor P-Channel MOSFET; 200V; 20V; 1,5Ohm; 3,5A; 40W; -55°C ~ 150°C; IRF9620 TIRF9620
кількість в упаковці: 10 шт

Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced

Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт

Виробник: Vishay Semiconductors
MOSFETs TO220 200V 3.5A P-CH MOSFET

Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V

Виробник: Vishay
Trans MOSFET P-CH 200V 3.5A 3-Pin(3+Tab) TO-220AB

Виробник: Vishay / Siliconix
MOSFETs TO220 200V 3.5A P-CH MOSFET

Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V

Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V

Виробник: Vishay / Siliconix
MOSFETs TO263 200V 3.5A P-CH MOSFET

Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V

Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V

Виробник: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V

Виробник: Harris Corporation
Description: 3A, 200V, 2.4OHM, P-CHANNEL, POW
Packaging: Bulk
Part Status: Active

Виробник: Harris Corporation
Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V

Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced

Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт

Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V

Виробник: Vishay
Trans MOSFET P-CH 200V 6.5A 3-Pin(3+Tab) TO-220AB

Виробник: Vishay Semiconductors
MOSFETs TO220 200V 6.5A P-CH MOSFET

Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V

Виробник: Vishay / Siliconix
MOSFETs TO220 200V 6.5A P-CH MOSFET

Виробник: IR
Силовой МОП-транзистор P-канальный Vси = -100 В, Rоткр = 0.8 Ом, Id(25oC) = -6.5 A Корпус D2-Pak

Виробник: Siliconix
P-MOSFET 6.5A 200V IRF9630S IRF9630STRL IRF9630S TIRF9630s
кількість в упаковці: 10 шт

Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced

Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт

Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V

Виробник: Vishay
Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) SMD-220

Виробник: Vishay Semiconductors
MOSFETs TO263 200V 6.5A P-CH MOSFET

Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V

Виробник: Vishay
Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) SMD-220 T/R

Виробник: Vishay Semiconductors
MOSFETs TO263 200V 6.5A P-CH MOSFET

Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V

Виробник: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V