Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (162786) > Сторінка 2711 з 2714
| Фото | Назва | Виробник | Інформація |
Доступність |
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BD243C | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 115V Collector current: 6A Case: TO220 Mounting: THT Frequency: 3MHz Power: 65W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD677A | STMicroelectronics |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 4A Power dissipation: 40W Case: SOT32 Current gain: 750 Mounting: THT Kind of package: tube |
на замовлення 845 шт: термін постачання 21-30 дні (днів) |
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| M24C02-FMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN5 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STSPIN220 | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; stepper motor controller; VFQFPN16; 1.3A; 1.8÷10VDC Type of integrated circuit: driver Kind of integrated circuit: stepper motor controller Case: VFQFPN16 Output current: 1.3A Mounting: SMD On-state resistance: 0.4Ω Operating temperature: -40...150°C Operating voltage: 1.8...10V DC Kind of package: in-tray |
на замовлення 843 шт: термін постачання 21-30 дні (днів) |
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FERD30H60CTS | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 60V; 15Ax2; tube; Ifsm: 250A; TO220AB; 500ns Semiconductor structure: common cathode; double Case: TO220AB Type of diode: rectifying Kind of package: tube Mounting: THT Features of semiconductor devices: ultrafast switching Reverse recovery time: 0.5µs Heatsink thickness: 0.51...0.6mm Max. forward voltage: 0.41V Load current: 15A x2 Max. load current: 60A Max. off-state voltage: 60V Max. forward impulse current: 250A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FERD30M45CT | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 45V; 15Ax2; tube; Ifsm: 250A; TO220AB Semiconductor structure: common cathode; double Case: TO220AB Type of diode: rectifying Kind of package: tube Mounting: THT Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.23...1.32mm Max. forward voltage: 0.35V Load current: 15A x2 Max. load current: 30A Max. off-state voltage: 45V Max. forward impulse current: 250A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FERD30SM100ST | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 30A; tube; Ifsm: 250A; TO220AB Semiconductor structure: single diode Case: TO220AB Type of diode: rectifying Kind of package: tube Mounting: THT Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.23...1.32mm Max. forward voltage: 0.39V Load current: 30A Max. load current: 60A Max. off-state voltage: 100V Max. forward impulse current: 250A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STPS10H100CT | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.85V Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.85V Max. forward impulse current: 180A Kind of package: tube Heatsink thickness: 1.23...1.32mm Max. load current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STPS10H100SFY | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277A; SMD; 100V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO277A Mounting: SMD Max. off-state voltage: 100V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.845V Max. forward impulse current: 230A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STL15N65M5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; 52W; PowerFLAT 5x6 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Power dissipation: 52W Case: PowerFLAT 5x6 On-state resistance: 375mΩ Mounting: SMD Gate charge: 22nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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LDK120M33R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 3.3V Output current: 0.2A Case: SOT23-5 Mounting: SMD Manufacturer series: LDK120 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V |
на замовлення 4158 шт: термін постачання 21-30 дні (днів) |
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| STB20NM60T4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SMB6F15AY | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS Type of diode: TVS |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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| STFW40N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 34A; 63W; TO3PF Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 34A Power dissipation: 63W Case: TO3PF On-state resistance: 78mΩ Mounting: THT Gate charge: 57nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SM6T15CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 15V; 28A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 28A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
на замовлення 2254 шт: термін постачання 21-30 дні (днів) |
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| M24C04-DRDW3TP/K | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory Type of integrated circuit: EEPROM memory |
на замовлення 36000 шт: термін постачання 21-30 дні (днів) |
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STPS30L45CT | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.74V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.74V Max. load current: 30A Max. forward impulse current: 220A Leakage current: 200mA Kind of package: tube Heatsink thickness: 1.23...1.32mm |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
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| STW43NM60ND | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 1200 шт: термін постачання 21-30 дні (днів) |
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1.5KE15CA | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 15V; 71A; bidirectional; DO201; 1.5kW; Ammo Pack Type of diode: TVS Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 71A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STWA45N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 22A; Idm: 140A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 210W Case: TO247 Gate-source voltage: ±25V On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 82nC Pulsed drain current: 140A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STF33N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 26A; 35W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 35W Case: TO220FP On-state resistance: 108mΩ Mounting: THT Gate charge: 45.5nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STTH60P03SW | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 60A; tube; Ifsm: 250A; TO247-3; 50ns Case: TO247-3 Mounting: THT Kind of package: tube Reverse recovery time: 50ns Leakage current: 0.1mA Max. forward voltage: 1.5V Load current: 60A Max. off-state voltage: 300V Max. forward impulse current: 250A Max. load current: 80A Features of semiconductor devices: ultrafast switching Type of diode: rectifying |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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TS4436ICT | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 0.6V; ±1%; SC70; reel,tape; 30mA Type of integrated circuit: voltage reference source Reference voltage: 0.6V Tolerance: ±1% Mounting: SMD Case: SC70 Operating temperature: -40...85°C Operating voltage: 1.7...10V Kind of package: reel; tape Maximum output current: 30mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TS4436AICT | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 0.6V; ±0.5%; SC70; reel,tape; 30mA Type of integrated circuit: voltage reference source Reference voltage: 0.6V Tolerance: ±0.5% Mounting: SMD Case: SC70 Operating temperature: -40...85°C Operating voltage: 1.7...10V Kind of package: reel; tape Maximum output current: 30mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| LDL112PUR | STMicroelectronics |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 1.2A; DFN6 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.6V Output voltage: 0.8...5V Output current: 1.2A Case: DFN6 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 2...3% Number of channels: 1 Input voltage: 1.6...5.5V Manufacturer series: LDL112 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STUSB4710AQTR | STMicroelectronics |
Category: USB interfaces - integrated circuitsDescription: IC: interface Type of integrated circuit: interface |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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E-TEA3718DP | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; motor controller; PDIP14; -1.5÷1.5A; 10÷50VDC Type of integrated circuit: driver Kind of integrated circuit: motor controller Case: PDIP14 Output current: -1.5...1.5A Mounting: THT Operating temperature: 0...70°C Application: universal Operating voltage: 10...50V DC |
на замовлення 62 шт: термін постачання 21-30 дні (днів) |
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TEA3718SFP | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; stepper motor controller; SO20; 1.5A; Ch: 2; 10÷50V Type of integrated circuit: driver Kind of integrated circuit: stepper motor controller Case: SO20 Output current: 1.5A Number of channels: 2 Mounting: SMD Operating temperature: 0...70°C Application: universal Kind of package: tube Supply voltage: 10...50V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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E-TEA3718SFP | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; stepper motor controller; SO20; 1.5A; Ch: 2; 10÷50V Type of integrated circuit: driver Kind of integrated circuit: stepper motor controller Case: SO20 Output current: 1.5A Number of channels: 2 Mounting: SMD Application: universal Supply voltage: 10...50V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STD6NF10T4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4A; 30W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Power dissipation: 30W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TN3050H-12WY | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 30A; 19A; Igt: 50mA; TO247; THT; tube Mounting: THT Case: TO247 Type of thyristor: thyristor Kind of package: tube Gate current: 50mA Load current: 19A Max. load current: 30A Max. forward impulse current: 0.3kA Max. off-state voltage: 1.2kV Application: automotive industry Features of semiconductor devices: high temperature |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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STPSC31H12CWY | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247; Ir: 600uA Mounting: THT Type of diode: Schottky rectifying Technology: SiC Case: TO247 Kind of package: tube Leakage current: 0.6mA Max. forward voltage: 2.25V Load current: 15A x2 Max. load current: 38A Max. forward impulse current: 105A Max. off-state voltage: 1.2kV Application: automotive industry Semiconductor structure: common cathode; double |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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| STGF15M65DF2 | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 31W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 31W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 45nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STGB15M65DF2 | STMicroelectronics |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 136W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 136W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LM2903WYPT | STMicroelectronics |
Category: SMD comparatorsDescription: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; TSSOP8; reel,tape Input offset current: 150nA Input bias current: 0.4µA Input offset voltage: 15mV Number of comparators: 2 Operating voltage: 2...36V Kind of output: open collector Type of integrated circuit: comparator Case: TSSOP8 Kind of comparator: low-power Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STPS2H100 | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 2A; DO41; Ufmax: 0.65V; reel Semiconductor structure: single diode Max. off-state voltage: 100V Load current: 2A Case: DO41 Max. forward voltage: 0.65V Max. forward impulse current: 50A Max. load current: 10A Mounting: THT Type of diode: Schottky rectifying Kind of package: reel |
на замовлення 552 шт: термін постачання 21-30 дні (днів) |
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STPS1L30U | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape Semiconductor structure: single diode Max. off-state voltage: 30V Load current: 1A Case: SMB Max. forward voltage: 0.26V Max. forward impulse current: 75A Max. load current: 10A Mounting: SMD Type of diode: Schottky rectifying Kind of package: reel; tape |
на замовлення 16918 шт: термін постачання 21-30 дні (днів) |
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STPS2H100A | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape Semiconductor structure: single diode Max. off-state voltage: 100V Load current: 2A Case: SMA Max. forward voltage: 0.65V Max. forward impulse current: 75A Mounting: SMD Type of diode: Schottky rectifying Kind of package: reel; tape |
на замовлення 4998 шт: термін постачання 21-30 дні (днів) |
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STPS140A | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Semiconductor structure: single diode Max. off-state voltage: 40V Load current: 1A Case: SMA Max. forward voltage: 0.43V Max. forward impulse current: 60A Max. load current: 7A Mounting: SMD Type of diode: Schottky rectifying Kind of package: reel; tape |
на замовлення 8770 шт: термін постачання 21-30 дні (днів) |
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STPS3L40UF | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB flat; SMD; 40V; 3A; reel,tape Semiconductor structure: single diode Max. off-state voltage: 40V Load current: 3A Case: SMB flat Max. forward voltage: 0.44V Max. forward impulse current: 75A Mounting: SMD Type of diode: Schottky rectifying Kind of package: reel; tape |
на замовлення 3786 шт: термін постачання 21-30 дні (днів) |
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STPS80170CW | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 170V; 40Ax2; TO247; Ufmax: 0.68V Semiconductor structure: common cathode; double Max. off-state voltage: 170V Load current: 40A x2 Case: TO247 Max. forward voltage: 0.68V Max. forward impulse current: 0.5kA Max. load current: 80A Mounting: THT Type of diode: Schottky rectifying Kind of package: tube |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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STPS41H100CT | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.62V Semiconductor structure: common cathode; double Max. off-state voltage: 100V Load current: 20A x2 Case: TO220AB Max. forward voltage: 0.62V Max. forward impulse current: 220A Mounting: THT Type of diode: Schottky rectifying Kind of package: tube Heatsink thickness: 1.23...1.32mm |
на замовлення 303 шт: термін постачання 21-30 дні (днів) |
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STP8NK80Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 242 шт: термін постачання 21-30 дні (днів) |
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STP8NK80ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 30W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 199 шт: термін постачання 21-30 дні (днів) |
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| ESDCAN04-2BLY | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 3.7A; 230W; bidirectional,double; ESD Mounting: SMD Type of diode: TVS array Leakage current: 50nA Max. forward impulse current: 3.7A Max. off-state voltage: 25.5V Peak pulse power dissipation: 230W Application: automotive industry; CAN Semiconductor structure: bidirectional; double Version: ESD |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| ACS102-6TA-TR | STMicroelectronics |
Category: TriacsDescription: Triac Type of thyristor: triac |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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LDCL015MR | STMicroelectronics |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 0.8÷7V; 0.15A; SMD Operating temperature: -40...125°C Voltage drop: 0.5mV Output current: 0.15A Output voltage: 0.8...7V Number of channels: 1 Input voltage: 1.8...5.5V Kind of voltage regulator: adjustable; LDO; linear Kind of package: reel; tape Mounting: SMD Case: SOT23-5 Type of integrated circuit: voltage regulator |
на замовлення 11150 шт: термін постачання 21-30 дні (днів) |
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| SMBJ22CA-TR | STMicroelectronics |
Category: Diodes - UnclassifiedDescription: SMBJ22CA-TR |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| STD8N60DM2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8A; 85W; DPAK,TO252 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 85W Case: DPAK; TO252 On-state resistance: 570mΩ Mounting: SMD Gate charge: 4nC Kind of channel: enhancement |
товару немає в наявності |
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| STF18N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; 25W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 25W Case: TO220FP On-state resistance: 255mΩ Mounting: THT Gate charge: 21.5nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BTA20-700BWRG | STMicroelectronics |
Category: TriacsDescription: Triac; 700V; 20A; TO220ABIns; Igt: 50mA; Snubberless™ Type of thyristor: triac Max. off-state voltage: 700V Max. load current: 20A Case: TO220ABIns Gate current: 50mA Technology: Snubberless™ Mounting: THT Kind of package: tube |
на замовлення 101 шт: термін постачання 21-30 дні (днів) |
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BTA20-700CWRG | STMicroelectronics |
Category: TriacsDescription: Triac; 700V; 20A; TO220ABIns; Igt: 35mA; Snubberless™ Type of thyristor: triac Max. off-state voltage: 700V Max. load current: 20A Case: TO220ABIns Gate current: 35mA Technology: Snubberless™ Mounting: THT Kind of package: tube |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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DB3 | STMicroelectronics |
Category: DiacsDescription: Diac; 2A; DO35; 28÷36V; THT; Ammo Pack Type of thyristor: diac Max. load current: 2A Case: DO35 Breakover voltage: 28...36V Mounting: THT Kind of package: Ammo Pack |
на замовлення 1268 шт: термін постачання 21-30 дні (днів) |
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1.5KE56CA | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 56V; 19.5A; bidirectional; CB429; 1.5kW Type of diode: TVS Max. off-state voltage: 47.8V Breakdown voltage: 56V Max. forward impulse current: 19.5A Semiconductor structure: bidirectional Case: CB429 Mounting: THT Leakage current: 1mA Peak pulse power dissipation: 1.5kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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VND5T016ASPTR-E | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: power switch; high-side; 70A; PowerSO16; 8÷36V; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 70A Mounting: SMD Number of channels: 2 Operating temperature: -40...150°C Case: PowerSO16 Supply voltage: 8...36V Kind of package: reel; tape On-state resistance: 32mΩ |
на замовлення 527 шт: термін постачання 21-30 дні (днів) |
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STF3NK80Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 25W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.57A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 126 шт: термін постачання 21-30 дні (днів) |
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STD3NK80ZT4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.57A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1427 шт: термін постачання 21-30 дні (днів) |
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STD3NK80Z-1 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; I2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.57A Power dissipation: 70W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 4.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 820 шт: термін постачання 21-30 дні (днів) |
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STP3NK80Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.57A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 4.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 96 шт: термін постачання 21-30 дні (днів) |
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TBA820M | STMicroelectronics |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; P: 1W; 16VDC; Ch: 1; Amp.class: B; DIP8 Type of integrated circuit: audio amplifier Mounting: THT Supply voltage: 16V DC Number of channels: 1 Amplifier class: B Case: DIP8 Power: 1W |
товару немає в наявності |
В кошику од. на суму грн. |
| BD243C |
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Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
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| BD677A |
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Виробник: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
на замовлення 845 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.08 грн |
| 14+ | 31.86 грн |
| 50+ | 24.97 грн |
| 100+ | 22.49 грн |
| 250+ | 19.66 грн |
| 500+ | 17.76 грн |
| M24C02-FMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -40...85°C
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В кошику
од. на суму грн.
| STSPIN220 |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; VFQFPN16; 1.3A; 1.8÷10VDC
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Case: VFQFPN16
Output current: 1.3A
Mounting: SMD
On-state resistance: 0.4Ω
Operating temperature: -40...150°C
Operating voltage: 1.8...10V DC
Kind of package: in-tray
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; VFQFPN16; 1.3A; 1.8÷10VDC
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Case: VFQFPN16
Output current: 1.3A
Mounting: SMD
On-state resistance: 0.4Ω
Operating temperature: -40...150°C
Operating voltage: 1.8...10V DC
Kind of package: in-tray
на замовлення 843 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 176.92 грн |
| 5+ | 149.35 грн |
| 25+ | 139.39 грн |
| 100+ | 125.29 грн |
| 500+ | 109.52 грн |
| FERD30H60CTS |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 15Ax2; tube; Ifsm: 250A; TO220AB; 500ns
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 0.5µs
Heatsink thickness: 0.51...0.6mm
Max. forward voltage: 0.41V
Load current: 15A x2
Max. load current: 60A
Max. off-state voltage: 60V
Max. forward impulse current: 250A
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 15Ax2; tube; Ifsm: 250A; TO220AB; 500ns
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 0.5µs
Heatsink thickness: 0.51...0.6mm
Max. forward voltage: 0.41V
Load current: 15A x2
Max. load current: 60A
Max. off-state voltage: 60V
Max. forward impulse current: 250A
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| FERD30M45CT |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 15Ax2; tube; Ifsm: 250A; TO220AB
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.35V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 45V
Max. forward impulse current: 250A
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 15Ax2; tube; Ifsm: 250A; TO220AB
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.35V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 45V
Max. forward impulse current: 250A
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| FERD30SM100ST |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 30A; tube; Ifsm: 250A; TO220AB
Semiconductor structure: single diode
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.39V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 30A; tube; Ifsm: 250A; TO220AB
Semiconductor structure: single diode
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.39V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
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| STPS10H100CT |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 180A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 180A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. load current: 10A
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| STPS10H100SFY |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
Application: automotive industry
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| STL15N65M5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 52W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 52W
Case: PowerFLAT 5x6
On-state resistance: 375mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 52W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 52W
Case: PowerFLAT 5x6
On-state resistance: 375mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhancement
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| LDK120M33R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LDK120
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LDK120
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
на замовлення 4158 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.29 грн |
| 10+ | 44.06 грн |
| 100+ | 33.44 грн |
| 250+ | 29.70 грн |
| 500+ | 28.38 грн |
| STB20NM60T4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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од. на суму грн.
| SMB6F15AY |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 8.94 грн |
| STFW40N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 34A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Power dissipation: 63W
Case: TO3PF
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 57nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 34A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Power dissipation: 63W
Case: TO3PF
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 57nC
Kind of channel: enhancement
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| SM6T15CAY |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 28A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 28A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 2254 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.06 грн |
| 15+ | 28.54 грн |
| 16+ | 26.63 грн |
| 100+ | 19.75 грн |
| 250+ | 18.09 грн |
| M24C04-DRDW3TP/K |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
на замовлення 36000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 18.41 грн |
| STPS30L45CT |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.74V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.74V
Max. load current: 30A
Max. forward impulse current: 220A
Leakage current: 200mA
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.74V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.74V
Max. load current: 30A
Max. forward impulse current: 220A
Leakage current: 200mA
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
на замовлення 93 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 91.14 грн |
| 6+ | 73.01 грн |
| 10+ | 61.40 грн |
| 25+ | 54.76 грн |
| STW43NM60ND |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 120+ | 318.10 грн |
| 1.5KE15CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 71A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 71A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 71A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 71A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
товару немає в наявності
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| STWA45N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 22A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 82nC
Pulsed drain current: 140A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 22A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 82nC
Pulsed drain current: 140A
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| STF33N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 35W
Case: TO220FP
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 45.5nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 35W
Case: TO220FP
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 45.5nC
Kind of channel: enhancement
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| STTH60P03SW |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 60A; tube; Ifsm: 250A; TO247-3; 50ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 50ns
Leakage current: 0.1mA
Max. forward voltage: 1.5V
Load current: 60A
Max. off-state voltage: 300V
Max. forward impulse current: 250A
Max. load current: 80A
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 60A; tube; Ifsm: 250A; TO247-3; 50ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 50ns
Leakage current: 0.1mA
Max. forward voltage: 1.5V
Load current: 60A
Max. off-state voltage: 300V
Max. forward impulse current: 250A
Max. load current: 80A
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
на замовлення 45 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 247.51 грн |
| 10+ | 157.64 грн |
| 30+ | 127.77 грн |
| TS4436ICT |
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Виробник: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 0.6V; ±1%; SC70; reel,tape; 30mA
Type of integrated circuit: voltage reference source
Reference voltage: 0.6V
Tolerance: ±1%
Mounting: SMD
Case: SC70
Operating temperature: -40...85°C
Operating voltage: 1.7...10V
Kind of package: reel; tape
Maximum output current: 30mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 0.6V; ±1%; SC70; reel,tape; 30mA
Type of integrated circuit: voltage reference source
Reference voltage: 0.6V
Tolerance: ±1%
Mounting: SMD
Case: SC70
Operating temperature: -40...85°C
Operating voltage: 1.7...10V
Kind of package: reel; tape
Maximum output current: 30mA
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| TS4436AICT |
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Виробник: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 0.6V; ±0.5%; SC70; reel,tape; 30mA
Type of integrated circuit: voltage reference source
Reference voltage: 0.6V
Tolerance: ±0.5%
Mounting: SMD
Case: SC70
Operating temperature: -40...85°C
Operating voltage: 1.7...10V
Kind of package: reel; tape
Maximum output current: 30mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 0.6V; ±0.5%; SC70; reel,tape; 30mA
Type of integrated circuit: voltage reference source
Reference voltage: 0.6V
Tolerance: ±0.5%
Mounting: SMD
Case: SC70
Operating temperature: -40...85°C
Operating voltage: 1.7...10V
Kind of package: reel; tape
Maximum output current: 30mA
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| LDL112PUR |
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Виробник: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 1.2A; DFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.6V
Output voltage: 0.8...5V
Output current: 1.2A
Case: DFN6
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 1.6...5.5V
Manufacturer series: LDL112
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 1.2A; DFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.6V
Output voltage: 0.8...5V
Output current: 1.2A
Case: DFN6
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 1.6...5.5V
Manufacturer series: LDL112
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| STUSB4710AQTR |
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Виробник: STMicroelectronics
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 106.33 грн |
| E-TEA3718DP |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; motor controller; PDIP14; -1.5÷1.5A; 10÷50VDC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: PDIP14
Output current: -1.5...1.5A
Mounting: THT
Operating temperature: 0...70°C
Application: universal
Operating voltage: 10...50V DC
Category: Motor and PWM drivers
Description: IC: driver; motor controller; PDIP14; -1.5÷1.5A; 10÷50VDC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: PDIP14
Output current: -1.5...1.5A
Mounting: THT
Operating temperature: 0...70°C
Application: universal
Operating voltage: 10...50V DC
на замовлення 62 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 276.99 грн |
| 10+ | 223.19 грн |
| 25+ | 217.38 грн |
| 50+ | 206.60 грн |
| TEA3718SFP |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; SO20; 1.5A; Ch: 2; 10÷50V
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Case: SO20
Output current: 1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: 0...70°C
Application: universal
Kind of package: tube
Supply voltage: 10...50V
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; SO20; 1.5A; Ch: 2; 10÷50V
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Case: SO20
Output current: 1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: 0...70°C
Application: universal
Kind of package: tube
Supply voltage: 10...50V
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| E-TEA3718SFP |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; SO20; 1.5A; Ch: 2; 10÷50V
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Case: SO20
Output current: 1.5A
Number of channels: 2
Mounting: SMD
Application: universal
Supply voltage: 10...50V
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; SO20; 1.5A; Ch: 2; 10÷50V
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Case: SO20
Output current: 1.5A
Number of channels: 2
Mounting: SMD
Application: universal
Supply voltage: 10...50V
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| STD6NF10T4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; 30W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; 30W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| TN3050H-12WY |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 30A; 19A; Igt: 50mA; TO247; THT; tube
Mounting: THT
Case: TO247
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 19A
Max. load current: 30A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Application: automotive industry
Features of semiconductor devices: high temperature
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 30A; 19A; Igt: 50mA; TO247; THT; tube
Mounting: THT
Case: TO247
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 19A
Max. load current: 30A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Application: automotive industry
Features of semiconductor devices: high temperature
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 335.97 грн |
| 3+ | 286.25 грн |
| 10+ | 236.47 грн |
| 30+ | 210.75 грн |
| STPSC31H12CWY |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247; Ir: 600uA
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247
Kind of package: tube
Leakage current: 0.6mA
Max. forward voltage: 2.25V
Load current: 15A x2
Max. load current: 38A
Max. forward impulse current: 105A
Max. off-state voltage: 1.2kV
Application: automotive industry
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247; Ir: 600uA
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247
Kind of package: tube
Leakage current: 0.6mA
Max. forward voltage: 2.25V
Load current: 15A x2
Max. load current: 38A
Max. forward impulse current: 105A
Max. off-state voltage: 1.2kV
Application: automotive industry
Semiconductor structure: common cathode; double
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 969.48 грн |
| 5+ | 808.96 грн |
| STGF15M65DF2 |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 31W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 31W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 31W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 31W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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| STGB15M65DF2 |
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Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 136W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 136W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 136W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 136W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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| LM2903WYPT |
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Виробник: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; TSSOP8; reel,tape
Input offset current: 150nA
Input bias current: 0.4µA
Input offset voltage: 15mV
Number of comparators: 2
Operating voltage: 2...36V
Kind of output: open collector
Type of integrated circuit: comparator
Case: TSSOP8
Kind of comparator: low-power
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; TSSOP8; reel,tape
Input offset current: 150nA
Input bias current: 0.4µA
Input offset voltage: 15mV
Number of comparators: 2
Operating voltage: 2...36V
Kind of output: open collector
Type of integrated circuit: comparator
Case: TSSOP8
Kind of comparator: low-power
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
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| STPS2H100 |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 2A; DO41; Ufmax: 0.65V; reel
Semiconductor structure: single diode
Max. off-state voltage: 100V
Load current: 2A
Case: DO41
Max. forward voltage: 0.65V
Max. forward impulse current: 50A
Max. load current: 10A
Mounting: THT
Type of diode: Schottky rectifying
Kind of package: reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 2A; DO41; Ufmax: 0.65V; reel
Semiconductor structure: single diode
Max. off-state voltage: 100V
Load current: 2A
Case: DO41
Max. forward voltage: 0.65V
Max. forward impulse current: 50A
Max. load current: 10A
Mounting: THT
Type of diode: Schottky rectifying
Kind of package: reel
на замовлення 552 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.51 грн |
| 46+ | 9.13 грн |
| 54+ | 7.80 грн |
| 63+ | 6.64 грн |
| 100+ | 5.48 грн |
| STPS1L30U |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 30V
Load current: 1A
Case: SMB
Max. forward voltage: 0.26V
Max. forward impulse current: 75A
Max. load current: 10A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 30V
Load current: 1A
Case: SMB
Max. forward voltage: 0.26V
Max. forward impulse current: 75A
Max. load current: 10A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
на замовлення 16918 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.91 грн |
| 24+ | 17.76 грн |
| 27+ | 15.68 грн |
| 100+ | 10.04 грн |
| 500+ | 7.14 грн |
| 1000+ | 6.06 грн |
| 2500+ | 5.48 грн |
| STPS2H100A |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 100V
Load current: 2A
Case: SMA
Max. forward voltage: 0.65V
Max. forward impulse current: 75A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 100V
Load current: 2A
Case: SMA
Max. forward voltage: 0.65V
Max. forward impulse current: 75A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
на замовлення 4998 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.08 грн |
| 40+ | 10.54 грн |
| 45+ | 9.29 грн |
| 100+ | 7.38 грн |
| 500+ | 5.72 грн |
| 1000+ | 5.14 грн |
| 2000+ | 4.90 грн |
| STPS140A |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Load current: 1A
Case: SMA
Max. forward voltage: 0.43V
Max. forward impulse current: 60A
Max. load current: 7A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Load current: 1A
Case: SMA
Max. forward voltage: 0.43V
Max. forward impulse current: 60A
Max. load current: 7A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
на замовлення 8770 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.34 грн |
| 30+ | 13.86 грн |
| 37+ | 11.22 грн |
| 50+ | 9.59 грн |
| 100+ | 8.24 грн |
| 500+ | 6.04 грн |
| 1000+ | 5.39 грн |
| 2500+ | 4.73 грн |
| 5000+ | 4.52 грн |
| STPS3L40UF |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 40V; 3A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Load current: 3A
Case: SMB flat
Max. forward voltage: 0.44V
Max. forward impulse current: 75A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 40V; 3A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Load current: 3A
Case: SMB flat
Max. forward voltage: 0.44V
Max. forward impulse current: 75A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
на замовлення 3786 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.81 грн |
| 20+ | 21.07 грн |
| 22+ | 19.00 грн |
| 26+ | 16.35 грн |
| 100+ | 12.86 грн |
| 500+ | 9.46 грн |
| 1000+ | 8.21 грн |
| 2000+ | 7.14 грн |
| STPS80170CW |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 170V; 40Ax2; TO247; Ufmax: 0.68V
Semiconductor structure: common cathode; double
Max. off-state voltage: 170V
Load current: 40A x2
Case: TO247
Max. forward voltage: 0.68V
Max. forward impulse current: 0.5kA
Max. load current: 80A
Mounting: THT
Type of diode: Schottky rectifying
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 170V; 40Ax2; TO247; Ufmax: 0.68V
Semiconductor structure: common cathode; double
Max. off-state voltage: 170V
Load current: 40A x2
Case: TO247
Max. forward voltage: 0.68V
Max. forward impulse current: 0.5kA
Max. load current: 80A
Mounting: THT
Type of diode: Schottky rectifying
Kind of package: tube
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 355.62 грн |
| 5+ | 256.38 грн |
| 10+ | 218.21 грн |
| STPS41H100CT |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.62V
Semiconductor structure: common cathode; double
Max. off-state voltage: 100V
Load current: 20A x2
Case: TO220AB
Max. forward voltage: 0.62V
Max. forward impulse current: 220A
Mounting: THT
Type of diode: Schottky rectifying
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.62V
Semiconductor structure: common cathode; double
Max. off-state voltage: 100V
Load current: 20A x2
Case: TO220AB
Max. forward voltage: 0.62V
Max. forward impulse current: 220A
Mounting: THT
Type of diode: Schottky rectifying
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
на замовлення 303 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 92.03 грн |
| 10+ | 73.01 грн |
| 50+ | 67.21 грн |
| 100+ | 65.55 грн |
| STP8NK80Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 242 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 94.71 грн |
| 10+ | 72.18 грн |
| 50+ | 68.04 грн |
| 100+ | 63.06 грн |
| STP8NK80ZFP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 199 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 230.53 грн |
| 5+ | 169.26 грн |
| 10+ | 141.88 грн |
| 25+ | 111.18 грн |
| 50+ | 98.74 грн |
| 100+ | 92.93 грн |
| ESDCAN04-2BLY |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 3.7A; 230W; bidirectional,double; ESD
Mounting: SMD
Type of diode: TVS array
Leakage current: 50nA
Max. forward impulse current: 3.7A
Max. off-state voltage: 25.5V
Peak pulse power dissipation: 230W
Application: automotive industry; CAN
Semiconductor structure: bidirectional; double
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 3.7A; 230W; bidirectional,double; ESD
Mounting: SMD
Type of diode: TVS array
Leakage current: 50nA
Max. forward impulse current: 3.7A
Max. off-state voltage: 25.5V
Peak pulse power dissipation: 230W
Application: automotive industry; CAN
Semiconductor structure: bidirectional; double
Version: ESD
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.04 грн |
| 70+ | 5.97 грн |
| 100+ | 4.49 грн |
| 250+ | 4.02 грн |
| 500+ | 3.73 грн |
| 1000+ | 3.55 грн |
| 3000+ | 3.19 грн |
| ACS102-6TA-TR |
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на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 15.64 грн |
| LDCL015MR |
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Виробник: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷7V; 0.15A; SMD
Operating temperature: -40...125°C
Voltage drop: 0.5mV
Output current: 0.15A
Output voltage: 0.8...7V
Number of channels: 1
Input voltage: 1.8...5.5V
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-5
Type of integrated circuit: voltage regulator
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷7V; 0.15A; SMD
Operating temperature: -40...125°C
Voltage drop: 0.5mV
Output current: 0.15A
Output voltage: 0.8...7V
Number of channels: 1
Input voltage: 1.8...5.5V
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-5
Type of integrated circuit: voltage regulator
на замовлення 11150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 61.40 грн |
| 25+ | 57.25 грн |
| 50+ | 54.76 грн |
| 100+ | 52.27 грн |
| 250+ | 49.78 грн |
| 500+ | 48.12 грн |
| 1000+ | 47.29 грн |
| SMBJ22CA-TR |
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на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 7.24 грн |
| STD8N60DM2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 85W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 85W
Case: DPAK; TO252
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 4nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 85W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 85W
Case: DPAK; TO252
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 4nC
Kind of channel: enhancement
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| STF18N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 255mΩ
Mounting: THT
Gate charge: 21.5nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 255mΩ
Mounting: THT
Gate charge: 21.5nC
Kind of channel: enhancement
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од. на суму грн.
| BTA20-700BWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 700V; 20A; TO220ABIns; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 20A
Case: TO220ABIns
Gate current: 50mA
Technology: Snubberless™
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 700V; 20A; TO220ABIns; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 20A
Case: TO220ABIns
Gate current: 50mA
Technology: Snubberless™
Mounting: THT
Kind of package: tube
на замовлення 101 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 158.47 грн |
| 10+ | 147.69 грн |
| BTA20-700CWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 700V; 20A; TO220ABIns; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 20A
Case: TO220ABIns
Gate current: 35mA
Technology: Snubberless™
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 700V; 20A; TO220ABIns; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 20A
Case: TO220ABIns
Gate current: 35mA
Technology: Snubberless™
Mounting: THT
Kind of package: tube
на замовлення 99 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 157.64 грн |
| 10+ | 125.29 грн |
| 50+ | 110.35 грн |
| DB3 |
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Виробник: STMicroelectronics
Category: Diacs
Description: Diac; 2A; DO35; 28÷36V; THT; Ammo Pack
Type of thyristor: diac
Max. load current: 2A
Case: DO35
Breakover voltage: 28...36V
Mounting: THT
Kind of package: Ammo Pack
Category: Diacs
Description: Diac; 2A; DO35; 28÷36V; THT; Ammo Pack
Type of thyristor: diac
Max. load current: 2A
Case: DO35
Breakover voltage: 28...36V
Mounting: THT
Kind of package: Ammo Pack
на замовлення 1268 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.30 грн |
| 38+ | 11.12 грн |
| 43+ | 9.71 грн |
| 100+ | 5.37 грн |
| 500+ | 3.62 грн |
| 1000+ | 3.12 грн |
| 1.5KE56CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 56V; 19.5A; bidirectional; CB429; 1.5kW
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 19.5A
Semiconductor structure: bidirectional
Case: CB429
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 56V; 19.5A; bidirectional; CB429; 1.5kW
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 19.5A
Semiconductor structure: bidirectional
Case: CB429
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
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од. на суму грн.
| VND5T016ASPTR-E |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 70A; PowerSO16; 8÷36V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 70A
Mounting: SMD
Number of channels: 2
Operating temperature: -40...150°C
Case: PowerSO16
Supply voltage: 8...36V
Kind of package: reel; tape
On-state resistance: 32mΩ
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 70A; PowerSO16; 8÷36V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 70A
Mounting: SMD
Number of channels: 2
Operating temperature: -40...150°C
Case: PowerSO16
Supply voltage: 8...36V
Kind of package: reel; tape
On-state resistance: 32mΩ
на замовлення 527 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 449.45 грн |
| 5+ | 365.90 грн |
| 10+ | 350.14 грн |
| 50+ | 343.50 грн |
| STF3NK80Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 126 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 186.75 грн |
| 10+ | 100.39 грн |
| 50+ | 84.63 грн |
| 100+ | 78.82 грн |
| STD3NK80ZT4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1427 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 133.14 грн |
| 5+ | 95.58 грн |
| 10+ | 85.87 грн |
| 50+ | 67.87 грн |
| 100+ | 61.81 грн |
| 250+ | 55.09 грн |
| 500+ | 50.86 грн |
| 1000+ | 47.21 грн |
| STD3NK80Z-1 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; I2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; I2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 820 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 106.33 грн |
| 75+ | 46.63 грн |
| 525+ | 41.57 грн |
| STP3NK80Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 96 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 114.37 грн |
| 10+ | 86.12 грн |
| 25+ | 67.29 грн |
| 50+ | 51.61 грн |
| TBA820M |
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Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; P: 1W; 16VDC; Ch: 1; Amp.class: B; DIP8
Type of integrated circuit: audio amplifier
Mounting: THT
Supply voltage: 16V DC
Number of channels: 1
Amplifier class: B
Case: DIP8
Power: 1W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; P: 1W; 16VDC; Ch: 1; Amp.class: B; DIP8
Type of integrated circuit: audio amplifier
Mounting: THT
Supply voltage: 16V DC
Number of channels: 1
Amplifier class: B
Case: DIP8
Power: 1W
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