Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (164758) > Сторінка 2746 з 2746
| Фото | Назва | Виробник | Інформація |
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X-NUCLEO-IHM04A1 | STMicroelectronics |
Category: Add-on boardsDescription: Expansion board; Comp: L6206; 8÷50VDC Type of accessories for development kits: expansion board Components: L6206 Associated circuits: STM32 Interface: GPIO Kind of connector: pin strips; screw terminal Supply voltage: 8...50V DC development kits accessories features: brush DC motor driver |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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X-NUCLEO-IHM11M1 | STMicroelectronics |
Category: Add-on boardsDescription: Expansion board; Comp: STSPIN230; 1.8÷10VDC Type of accessories for development kits: expansion board Components: STSPIN230 Associated circuits: STM32 Kind of connector: pin strips; screw terminal Supply voltage: 1.8...10V DC development kits accessories features: brushless DC motor driver |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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X-NUCLEO-IHM13A1 | STMicroelectronics |
Category: Add-on boardsDescription: Expansion board; Comp: STSPIN250; 1.8÷10VDC Type of accessories for development kits: expansion board Components: STSPIN250 Associated circuits: STM32 Interface: GPIO Kind of connector: pin strips; screw terminal Supply voltage: 1.8...10V DC development kits accessories features: brush DC motor driver |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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X-NUCLEO-IHM05A1 | STMicroelectronics |
Category: Add-on boardsDescription: Expansion board; Comp: L6208; 8÷50VDC Type of accessories for development kits: expansion board Components: L6208 Associated circuits: STM32 Interface: GPIO Kind of connector: pin strips; screw terminal Supply voltage: 8...50V DC development kits accessories features: stepper motor driver |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| X-NUCLEO-IHM09M2 | STMicroelectronics |
Category: Development kits - UnclassifiedDescription: X-NUCLEO-IHM09M2 |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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MMBTA42 | STMicroelectronics |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 0.35W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| L6208Q | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; H-bridge; stepper motor controller; VFQFPN48; 2.5A Operating temperature: -25...125°C Topology: H-bridge Kind of integrated circuit: stepper motor controller Type of integrated circuit: driver Mounting: SMD Application: universal Kind of package: in-tray Case: VFQFPN48 On-state resistance: 0.3Ω Output current: 2.5A Number of channels: 4 Supply voltage: 8...52V Frequency: 0.1MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STD35P6LLF6 | STMicroelectronics |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -25A; 70W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -25A Power dissipation: 70W Case: DPAK Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1147 шт: термін постачання 21-30 дні (днів) |
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BAT30SWFILM | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.3A Semiconductor structure: double series Max. forward voltage: 0.53V Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 3950 шт: термін постачання 21-30 дні (днів) |
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| HSP061-2M6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; 3A; unidirectional; UQFN6; Ch: 2; reel,tape Kind of package: reel; tape Version: ESD Application: Ethernet Mounting: SMD Type of diode: TVS array Semiconductor structure: unidirectional Leakage current: 0.1µA Number of channels: 2 Max. forward impulse current: 3A Breakdown voltage: 6V Case: UQFN6 |
на замовлення 2317 шт: термін постачання 21-30 дні (днів) |
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SMAJ188CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 209V; 6A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 188V Breakdown voltage: 209V Max. forward impulse current: 6A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 4700 шт: термін постачання 21-30 дні (днів) |
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SMAJ188A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 209V; 6A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 188V Breakdown voltage: 209V Max. forward impulse current: 6A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 460 шт: термін постачання 21-30 дні (днів) |
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| STW56N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Pulsed drain current: 208A Power dissipation: 350W Case: TO247 Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: THT Gate charge: 91nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STW56N60M2-4 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Pulsed drain current: 208A Power dissipation: 350W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: THT Gate charge: 91nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STB140NF55T4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; Idm: 320A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Pulsed drain current: 320A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: STripFET™ II Gate charge: 142nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| STB141NF55 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 55V; 80A; 300W; D2PAK,TO263AB; SMT Type of transistor: N-MOSFET Drain-source voltage: 55V Drain current: 80A Power dissipation: 300W Case: D2PAK; TO263AB Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Application: automotive industry Technology: MOSFET Electrical mounting: SMT Gate charge: 142nC |
на замовлення 13000 шт: термін постачання 21-30 дні (днів) |
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L5974D | STMicroelectronics |
Category: Voltage regulators - DC/DC circuits Description: Driver; DC/DC converter; 3A; SO8; SMD; 280kHz; -25÷125°C; tube Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter Output current: 3A Case: SO8 Mounting: SMD Frequency: 280kHz Operating temperature: -25...125°C Kind of package: tube Operating voltage: 4.4...36V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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L6384E | STMicroelectronics |
Category: MOSFET/IGBT driversDescription: IC: driver; push-pull; DIP8; 0.4A; 580V; Ch: 2; 400kHz Type of integrated circuit: driver Topology: push-pull Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver Case: DIP8 Output current: 0.4A Output voltage: 580V Number of channels: 2 Mounting: THT Operating temperature: -40...125°C Frequency: 400kHz Kind of package: tube Supply voltage: 14.6...16.6V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| STTH8S06D | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220AC; Ir: 20uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 60A Case: TO220AC Max. forward voltage: 3.4V Leakage current: 20µA Reverse recovery time: 12ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SM6T22CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 22V; 20A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18.8V Breakdown voltage: 22V Max. forward impulse current: 20A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 359 шт: термін постачання 21-30 дні (днів) |
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SM6T22CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 22V; 20A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18.8V Breakdown voltage: 22V Max. forward impulse current: 20A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
на замовлення 2262 шт: термін постачання 21-30 дні (днів) |
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SM15T22CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 22V; 4.6A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18.8V Breakdown voltage: 22V Max. forward impulse current: 4.6A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 3707 шт: термін постачання 21-30 дні (днів) |
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TS514IDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 3MHz; Ch: 4; SO14; 6÷30VDC; reel,tape Mounting: SMT Operating temperature: -40...125°C Number of channels: 4 Slew rate: 1.5V/μs Kind of package: reel; tape Bandwidth: 3MHz Voltage supply range: 6...30V DC Case: SO14 Type of integrated circuit: operational amplifier Integrated circuit features: precision Input offset current: 40nA Input offset voltage: 4mV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SM15T68CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 68V; 16.3A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 16.3A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 2116 шт: термін постачання 21-30 дні (днів) |
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LMC7101ILT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 800kHz; Ch: 1; SOT23-5; 3÷16VDC Type of integrated circuit: operational amplifier Bandwidth: 800kHz Mounting: SMT Number of channels: 1 Case: SOT23-5 Slew rate: 1V/μs Operating temperature: -40...125°C Input offset voltage: 5mV Voltage supply range: 3...16V DC Integrated circuit features: low power; rail-to-rail Kind of package: reel; tape Input bias current: 0.2nA Input offset current: 0.2nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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L6201 | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; H-bridge; motor controller; SO20; 1A; Ch: 2; 100kHz Type of integrated circuit: driver Output current: 1A Case: SO20 Mounting: SMD Kind of package: tube Operating temperature: -25...125°C Number of channels: 2 Application: DC motors Topology: H-bridge Kind of integrated circuit: motor controller On-state resistance: 0.3Ω Supply voltage: 12...48V Frequency: 0.1MHz |
на замовлення 782 шт: термін постачання 21-30 дні (днів) |
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L6201PSTR | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; H-bridge; motor controller; PowerSO20; 1A; Ch: 2; 100kHz Type of integrated circuit: driver Output current: 1A Case: PowerSO20 Mounting: SMD Kind of package: reel; tape Operating temperature: -25...125°C Number of channels: 2 Application: DC motors Topology: H-bridge Kind of integrated circuit: motor controller On-state resistance: 0.3Ω Supply voltage: 12...48V Frequency: 0.1MHz |
на замовлення 501 шт: термін постачання 21-30 дні (днів) |
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L6374FP | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: driver; line driver; SO20; 0.1A; Ch: 4; 10.8÷35V Type of integrated circuit: driver Kind of integrated circuit: line driver Case: SO20 Output current: 0.1A Number of channels: 4 Supply voltage: 10.8...35V Mounting: SMD |
на замовлення 550 шт: термін постачання 21-30 дні (днів) |
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TIP132 | STMicroelectronics |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 8A; 70W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 70W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| STL220N6F7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 480A; 188W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 480A Power dissipation: 188W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 98nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STP220N6F7 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 120A; Idm: 480A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 480A Power dissipation: 237W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement Technology: STripFET™ F7 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SM15T18A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1583 шт: термін постачання 21-30 дні (днів) |
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| STPS30H100DJF-TR | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerFLAT 5x6; SMD; 100V; 30A Semiconductor structure: single diode Case: PowerFLAT 5x6 Type of diode: Schottky rectifying Kind of package: reel; tape Mounting: SMD Max. forward voltage: 0.84V Load current: 30A Max. load current: 45A Max. off-state voltage: 100V Max. forward impulse current: 250A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PD54003-E | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 4A; 25.8W; PowerSO10RF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 4A Power dissipation: 25.8W Case: PowerSO10RF Gate-source voltage: ±20V Mounting: SMD Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STB18NM60ND | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.19A Power dissipation: 130W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.29Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 52A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STP28NM60ND | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 14.5A; Idm: 92A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 14.5A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.15Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 62.5nC Pulsed drain current: 92A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STL11N3LLH6 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11A Pulsed drain current: 44A Power dissipation: 45W Case: PowerFLAT 3.3x3.3 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STPS10150CFP | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 150V; 5Ax2; TO220FP; Ufmax: 1V Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 1V Load current: 5A x2 Max. load current: 10A Max. off-state voltage: 150V Max. forward impulse current: 120A Semiconductor structure: common cathode; double Case: TO220FP |
на замовлення 347 шт: термін постачання 21-30 дні (днів) |
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STPS10H100CFP | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.85V Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 0.85V Load current: 5A x2 Max. load current: 10A Max. off-state voltage: 100V Max. forward impulse current: 180A Semiconductor structure: common cathode; double Case: TO220FP |
на замовлення 1988 шт: термін постачання 21-30 дні (днів) |
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STPS10L25D | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 25V; 10A; TO220AC; Ufmax: 0.46V Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Heatsink thickness: 1.23...1.32mm Max. forward voltage: 0.46V Load current: 10A Max. load current: 30A Max. off-state voltage: 25V Max. forward impulse current: 200A Semiconductor structure: single diode Case: TO220AC |
на замовлення 280 шт: термін постачання 21-30 дні (днів) |
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L78M05CDT-TR | STMicroelectronics |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; L78M; ±4% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: L78M Kind of package: reel; tape Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Input voltage: 7...20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| VIPER26HD | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: driver; flyback; SO16; 3A; 800V; Uin: 11.5÷23.5V; 115kHz Type of integrated circuit: driver Topology: flyback Case: SO16 Output current: 3A Output voltage: 800V Mounting: SMD Operating temperature: -40...150°C Frequency: 115kHz Input voltage: 11.5...23.5V |
на замовлення 5630 шт: термін постачання 21-30 дні (днів) |
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SMAJ40A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 44.4V; 27A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4V Max. forward impulse current: 27A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Leakage current: 1µA |
на замовлення 6653 шт: термін постачання 21-30 дні (днів) |
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SMAJ48CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 56.1V; 23A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 56.1V Max. forward impulse current: 23A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Leakage current: 1µA |
на замовлення 986 шт: термін постачання 21-30 дні (днів) |
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SMAJ43A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 47.8V; 25A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 43V Breakdown voltage: 47.8V Max. forward impulse current: 25A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Leakage current: 1µA |
на замовлення 3899 шт: термін постачання 21-30 дні (днів) |
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TS507ILT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.9MHz; Ch: 1; 2.7÷5.5VDC; SOT23-5; 45nA Type of integrated circuit: operational amplifier Bandwidth: 1.9MHz Number of channels: 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Slew rate: 0.6V/μs Integrated circuit features: precision; rail-to-rail Input offset voltage: 0.75mV Kind of package: reel; tape Input offset current: 45nA |
на замовлення 2428 шт: термін постачання 21-30 дні (днів) |
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TS431IZ-AP | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±2%; TO92; Ammo Pack; 30mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±2% Mounting: THT Case: TO92 Operating temperature: -40...125°C Operating voltage: 1.24...6V Kind of package: Ammo Pack Maximum output current: 30mA |
на замовлення 1831 шт: термін постачання 21-30 дні (днів) |
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TL1431IZ | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±0.4%; TO92; bulk; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.4% Mounting: THT Case: TO92 Operating temperature: -40...105°C Operating voltage: 2.5...36V Kind of package: bulk Maximum output current: 0.1A |
на замовлення 2194 шт: термін постачання 21-30 дні (днів) |
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TS431IZT | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±2%; TO92; reel,tape; 30mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±2% Mounting: THT Case: TO92 Operating temperature: -40...125°C Operating voltage: 1.24...6V Kind of package: reel; tape Maximum output current: 30mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| STL4LN80K5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2A Pulsed drain current: 8A Power dissipation: 38W Case: PowerFLAT 5x6 Gate-source voltage: ±30V On-state resistance: 2.6Ω Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STPS5L60SF | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277A; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: TO277A Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.52V Max. load current: 15A Leakage current: 100mA Max. forward impulse current: 100A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STPS5L60SFY | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277A; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: TO277A Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.51V Max. load current: 15A Leakage current: 150mA Max. forward impulse current: 220A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STPS5L60SY | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.52V Max. load current: 15A Leakage current: 100mA Max. forward impulse current: 150A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BUL743 | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 500V; 12A; 100W; TO220AB; 1.23÷1.32mm Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 500V Collector current: 12A Power dissipation: 100W Case: TO220AB Pulsed collector current: 24A Current gain: 24...80 Mounting: THT Kind of package: tube Heatsink thickness: 1.23...1.32mm |
на замовлення 987 шт: термін постачання 21-30 дні (днів) |
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1.5KE62A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 62V; 17.7A; unidirectional; DO201; Ammo Pack Type of diode: TVS Max. off-state voltage: 53V Breakdown voltage: 62V Max. forward impulse current: 17.7A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack |
на замовлення 43 шт: термін постачання 21-30 дні (днів) |
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1.5KE6V8CA | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; Ammo Pack Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 143A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1mA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack |
на замовлення 346 шт: термін постачання 21-30 дні (днів) |
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| STPS3L60SY | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.94V Max. forward impulse current: 75A Kind of package: reel; tape Application: automotive industry Leakage current: 15mA Max. load current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STPS3L60QRL | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 3A; DO15; Ufmax: 0.79V; reel Type of diode: Schottky rectifying Case: DO15 Mounting: THT Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.79V Max. forward impulse current: 100A Kind of package: reel Leakage current: 30mA Max. load current: 10A |
товару немає в наявності |
В кошику од. на суму грн. |
| X-NUCLEO-IHM04A1 |
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Виробник: STMicroelectronics
Category: Add-on boards
Description: Expansion board; Comp: L6206; 8÷50VDC
Type of accessories for development kits: expansion board
Components: L6206
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips; screw terminal
Supply voltage: 8...50V DC
development kits accessories features: brush DC motor driver
Category: Add-on boards
Description: Expansion board; Comp: L6206; 8÷50VDC
Type of accessories for development kits: expansion board
Components: L6206
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips; screw terminal
Supply voltage: 8...50V DC
development kits accessories features: brush DC motor driver
товару немає в наявності
В кошику
од. на суму грн.
| X-NUCLEO-IHM11M1 |
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Виробник: STMicroelectronics
Category: Add-on boards
Description: Expansion board; Comp: STSPIN230; 1.8÷10VDC
Type of accessories for development kits: expansion board
Components: STSPIN230
Associated circuits: STM32
Kind of connector: pin strips; screw terminal
Supply voltage: 1.8...10V DC
development kits accessories features: brushless DC motor driver
Category: Add-on boards
Description: Expansion board; Comp: STSPIN230; 1.8÷10VDC
Type of accessories for development kits: expansion board
Components: STSPIN230
Associated circuits: STM32
Kind of connector: pin strips; screw terminal
Supply voltage: 1.8...10V DC
development kits accessories features: brushless DC motor driver
товару немає в наявності
В кошику
од. на суму грн.
| X-NUCLEO-IHM13A1 |
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Виробник: STMicroelectronics
Category: Add-on boards
Description: Expansion board; Comp: STSPIN250; 1.8÷10VDC
Type of accessories for development kits: expansion board
Components: STSPIN250
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips; screw terminal
Supply voltage: 1.8...10V DC
development kits accessories features: brush DC motor driver
Category: Add-on boards
Description: Expansion board; Comp: STSPIN250; 1.8÷10VDC
Type of accessories for development kits: expansion board
Components: STSPIN250
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips; screw terminal
Supply voltage: 1.8...10V DC
development kits accessories features: brush DC motor driver
товару немає в наявності
В кошику
од. на суму грн.
| X-NUCLEO-IHM05A1 |
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Виробник: STMicroelectronics
Category: Add-on boards
Description: Expansion board; Comp: L6208; 8÷50VDC
Type of accessories for development kits: expansion board
Components: L6208
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips; screw terminal
Supply voltage: 8...50V DC
development kits accessories features: stepper motor driver
Category: Add-on boards
Description: Expansion board; Comp: L6208; 8÷50VDC
Type of accessories for development kits: expansion board
Components: L6208
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips; screw terminal
Supply voltage: 8...50V DC
development kits accessories features: stepper motor driver
товару немає в наявності
В кошику
од. на суму грн.
| X-NUCLEO-IHM09M2 |
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на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3004.04 грн |
| MMBTA42 |
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Виробник: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| L6208Q |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; stepper motor controller; VFQFPN48; 2.5A
Operating temperature: -25...125°C
Topology: H-bridge
Kind of integrated circuit: stepper motor controller
Type of integrated circuit: driver
Mounting: SMD
Application: universal
Kind of package: in-tray
Case: VFQFPN48
On-state resistance: 0.3Ω
Output current: 2.5A
Number of channels: 4
Supply voltage: 8...52V
Frequency: 0.1MHz
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; stepper motor controller; VFQFPN48; 2.5A
Operating temperature: -25...125°C
Topology: H-bridge
Kind of integrated circuit: stepper motor controller
Type of integrated circuit: driver
Mounting: SMD
Application: universal
Kind of package: in-tray
Case: VFQFPN48
On-state resistance: 0.3Ω
Output current: 2.5A
Number of channels: 4
Supply voltage: 8...52V
Frequency: 0.1MHz
товару немає в наявності
В кошику
од. на суму грн.
| STD35P6LLF6 |
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Виробник: STMicroelectronics
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -25A; 70W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -25A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -25A; 70W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -25A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1147 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 125.67 грн |
| 6+ | 67.14 грн |
| 10+ | 59.15 грн |
| 50+ | 48.76 грн |
| BAT30SWFILM |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 0.53V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 0.53V
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 3950 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.89 грн |
| 71+ | 5.67 грн |
| 81+ | 4.97 грн |
| 100+ | 4.61 грн |
| 500+ | 3.76 грн |
| 1000+ | 3.39 грн |
| 3000+ | 3.14 грн |
| HSP061-2M6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 3A; unidirectional; UQFN6; Ch: 2; reel,tape
Kind of package: reel; tape
Version: ESD
Application: Ethernet
Mounting: SMD
Type of diode: TVS array
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 3A
Breakdown voltage: 6V
Case: UQFN6
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 3A; unidirectional; UQFN6; Ch: 2; reel,tape
Kind of package: reel; tape
Version: ESD
Application: Ethernet
Mounting: SMD
Type of diode: TVS array
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 3A
Breakdown voltage: 6V
Case: UQFN6
на замовлення 2317 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.10 грн |
| 22+ | 18.22 грн |
| 25+ | 16.62 грн |
| 50+ | 13.43 грн |
| 100+ | 12.39 грн |
| 250+ | 11.11 грн |
| 500+ | 10.39 грн |
| 1000+ | 9.67 грн |
| SMAJ188CA-TR | ![]() |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 4700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.47 грн |
| 2000+ | 8.47 грн |
| SMAJ188A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 460 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.38 грн |
| 25+ | 16.31 грн |
| 29+ | 13.83 грн |
| 36+ | 11.27 грн |
| 100+ | 8.95 грн |
| 125+ | 8.71 грн |
| 250+ | 8.15 грн |
| STW56N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| STW56N60M2-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
В кошику
од. на суму грн.
| STB140NF55T4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: STripFET™ II
Gate charge: 142nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: STripFET™ II
Gate charge: 142nC
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В кошику
од. на суму грн.
| STB141NF55 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 80A; 300W; D2PAK,TO263AB; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Technology: MOSFET
Electrical mounting: SMT
Gate charge: 142nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 80A; 300W; D2PAK,TO263AB; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Technology: MOSFET
Electrical mounting: SMT
Gate charge: 142nC
на замовлення 13000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 134.28 грн |
| L5974D |
Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; 3A; SO8; SMD; 280kHz; -25÷125°C; tube
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Output current: 3A
Case: SO8
Mounting: SMD
Frequency: 280kHz
Operating temperature: -25...125°C
Kind of package: tube
Operating voltage: 4.4...36V DC
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; 3A; SO8; SMD; 280kHz; -25÷125°C; tube
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Output current: 3A
Case: SO8
Mounting: SMD
Frequency: 280kHz
Operating temperature: -25...125°C
Kind of package: tube
Operating voltage: 4.4...36V DC
товару немає в наявності
В кошику
од. на суму грн.
| L6384E |
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Виробник: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; DIP8; 0.4A; 580V; Ch: 2; 400kHz
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: DIP8
Output current: 0.4A
Output voltage: 580V
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Frequency: 400kHz
Kind of package: tube
Supply voltage: 14.6...16.6V
Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; DIP8; 0.4A; 580V; Ch: 2; 400kHz
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: DIP8
Output current: 0.4A
Output voltage: 580V
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Frequency: 400kHz
Kind of package: tube
Supply voltage: 14.6...16.6V
товару немає в наявності
В кошику
од. на суму грн.
| STTH8S06D |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220AC; Ir: 20uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220AC
Max. forward voltage: 3.4V
Leakage current: 20µA
Reverse recovery time: 12ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220AC; Ir: 20uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220AC
Max. forward voltage: 3.4V
Leakage current: 20µA
Reverse recovery time: 12ns
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| SM6T22CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22V; 20A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22V; 20A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 359 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.49 грн |
| 34+ | 11.83 грн |
| 39+ | 10.47 грн |
| 45+ | 8.95 грн |
| 50+ | 8.15 грн |
| 100+ | 7.59 грн |
| 125+ | 7.43 грн |
| 250+ | 7.11 грн |
| SM6T22CAY |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22V; 20A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22V; 20A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 2262 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 43.04 грн |
| 11+ | 36.61 грн |
| 12+ | 34.85 грн |
| 25+ | 32.29 грн |
| 100+ | 28.29 грн |
| 250+ | 25.66 грн |
| 500+ | 23.74 грн |
| 1000+ | 21.66 грн |
| SM15T22CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22V; 4.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22V; 4.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 3707 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.09 грн |
| 10+ | 43.88 грн |
| 100+ | 31.81 грн |
| 250+ | 26.62 грн |
| 500+ | 22.54 грн |
| 1000+ | 18.62 грн |
| 2500+ | 13.91 грн |
| TS514IDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; SO14; 6÷30VDC; reel,tape
Mounting: SMT
Operating temperature: -40...125°C
Number of channels: 4
Slew rate: 1.5V/μs
Kind of package: reel; tape
Bandwidth: 3MHz
Voltage supply range: 6...30V DC
Case: SO14
Type of integrated circuit: operational amplifier
Integrated circuit features: precision
Input offset current: 40nA
Input offset voltage: 4mV
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; SO14; 6÷30VDC; reel,tape
Mounting: SMT
Operating temperature: -40...125°C
Number of channels: 4
Slew rate: 1.5V/μs
Kind of package: reel; tape
Bandwidth: 3MHz
Voltage supply range: 6...30V DC
Case: SO14
Type of integrated circuit: operational amplifier
Integrated circuit features: precision
Input offset current: 40nA
Input offset voltage: 4mV
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| SM15T68CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 68V; 16.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 16.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 68V; 16.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 16.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2116 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.57 грн |
| 17+ | 24.62 грн |
| 19+ | 21.74 грн |
| 50+ | 17.26 грн |
| 100+ | 16.07 грн |
| 250+ | 15.11 грн |
| LMC7101ILT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 1; SOT23-5; 3÷16VDC
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 5mV
Voltage supply range: 3...16V DC
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 0.2nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 1; SOT23-5; 3÷16VDC
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 5mV
Voltage supply range: 3...16V DC
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 0.2nA
Application: automotive industry
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| L6201 |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO20; 1A; Ch: 2; 100kHz
Type of integrated circuit: driver
Output current: 1A
Case: SO20
Mounting: SMD
Kind of package: tube
Operating temperature: -25...125°C
Number of channels: 2
Application: DC motors
Topology: H-bridge
Kind of integrated circuit: motor controller
On-state resistance: 0.3Ω
Supply voltage: 12...48V
Frequency: 0.1MHz
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO20; 1A; Ch: 2; 100kHz
Type of integrated circuit: driver
Output current: 1A
Case: SO20
Mounting: SMD
Kind of package: tube
Operating temperature: -25...125°C
Number of channels: 2
Application: DC motors
Topology: H-bridge
Kind of integrated circuit: motor controller
On-state resistance: 0.3Ω
Supply voltage: 12...48V
Frequency: 0.1MHz
на замовлення 782 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 578.43 грн |
| 3+ | 500.35 грн |
| 5+ | 476.37 грн |
| 10+ | 441.20 грн |
| 25+ | 398.84 грн |
| 40+ | 384.45 грн |
| L6201PSTR |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; PowerSO20; 1A; Ch: 2; 100kHz
Type of integrated circuit: driver
Output current: 1A
Case: PowerSO20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -25...125°C
Number of channels: 2
Application: DC motors
Topology: H-bridge
Kind of integrated circuit: motor controller
On-state resistance: 0.3Ω
Supply voltage: 12...48V
Frequency: 0.1MHz
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; PowerSO20; 1A; Ch: 2; 100kHz
Type of integrated circuit: driver
Output current: 1A
Case: PowerSO20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -25...125°C
Number of channels: 2
Application: DC motors
Topology: H-bridge
Kind of integrated circuit: motor controller
On-state resistance: 0.3Ω
Supply voltage: 12...48V
Frequency: 0.1MHz
на замовлення 501 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 522.48 грн |
| 10+ | 382.05 грн |
| 25+ | 359.67 грн |
| 50+ | 345.29 грн |
| 100+ | 339.69 грн |
| L6374FP |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; line driver; SO20; 0.1A; Ch: 4; 10.8÷35V
Type of integrated circuit: driver
Kind of integrated circuit: line driver
Case: SO20
Output current: 0.1A
Number of channels: 4
Supply voltage: 10.8...35V
Mounting: SMD
Category: Drivers - integrated circuits
Description: IC: driver; line driver; SO20; 0.1A; Ch: 4; 10.8÷35V
Type of integrated circuit: driver
Kind of integrated circuit: line driver
Case: SO20
Output current: 0.1A
Number of channels: 4
Supply voltage: 10.8...35V
Mounting: SMD
на замовлення 550 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 557.77 грн |
| 3+ | 506.74 грн |
| TIP132 |
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Виробник: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 70W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 70W
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 70W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 70W
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| STL220N6F7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STP220N6F7 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 237W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ F7
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 237W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ F7
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| SM15T18A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1583 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.78 грн |
| 10+ | 42.04 грн |
| 11+ | 38.68 грн |
| 50+ | 31.57 грн |
| 100+ | 28.93 грн |
| 500+ | 23.98 грн |
| 1000+ | 22.22 грн |
| STPS30H100DJF-TR |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT 5x6; SMD; 100V; 30A
Semiconductor structure: single diode
Case: PowerFLAT 5x6
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.84V
Load current: 30A
Max. load current: 45A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT 5x6; SMD; 100V; 30A
Semiconductor structure: single diode
Case: PowerFLAT 5x6
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.84V
Load current: 30A
Max. load current: 45A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
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| PD54003-E |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 4A; 25.8W; PowerSO10RF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 4A
Power dissipation: 25.8W
Case: PowerSO10RF
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 4A; 25.8W; PowerSO10RF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 4A
Power dissipation: 25.8W
Case: PowerSO10RF
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
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| STB18NM60ND |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 52A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 52A
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| STP28NM60ND |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 14.5A; Idm: 92A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14.5A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 62.5nC
Pulsed drain current: 92A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 14.5A; Idm: 92A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14.5A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 62.5nC
Pulsed drain current: 92A
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| STL11N3LLH6 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 45W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 45W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STPS10150CFP |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 5Ax2; TO220FP; Ufmax: 1V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1V
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 150V
Max. forward impulse current: 120A
Semiconductor structure: common cathode; double
Case: TO220FP
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 5Ax2; TO220FP; Ufmax: 1V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1V
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 150V
Max. forward impulse current: 120A
Semiconductor structure: common cathode; double
Case: TO220FP
на замовлення 347 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 65.42 грн |
| 100+ | 21.74 грн |
| STPS10H100CFP |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.85V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 0.85V
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 100V
Max. forward impulse current: 180A
Semiconductor structure: common cathode; double
Case: TO220FP
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.85V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 0.85V
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 100V
Max. forward impulse current: 180A
Semiconductor structure: common cathode; double
Case: TO220FP
на замовлення 1988 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.13 грн |
| 17+ | 24.38 грн |
| 50+ | 19.50 грн |
| STPS10L25D |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 10A; TO220AC; Ufmax: 0.46V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.46V
Load current: 10A
Max. load current: 30A
Max. off-state voltage: 25V
Max. forward impulse current: 200A
Semiconductor structure: single diode
Case: TO220AC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 10A; TO220AC; Ufmax: 0.46V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.46V
Load current: 10A
Max. load current: 30A
Max. off-state voltage: 25V
Max. forward impulse current: 200A
Semiconductor structure: single diode
Case: TO220AC
на замовлення 280 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.28 грн |
| 14+ | 29.17 грн |
| 25+ | 28.13 грн |
| 50+ | 28.05 грн |
| L78M05CDT-TR | ![]() |
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Виробник: STMicroelectronics
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; L78M; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: L78M
Kind of package: reel; tape
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; L78M; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: L78M
Kind of package: reel; tape
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
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| VIPER26HD |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; SO16; 3A; 800V; Uin: 11.5÷23.5V; 115kHz
Type of integrated circuit: driver
Topology: flyback
Case: SO16
Output current: 3A
Output voltage: 800V
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 115kHz
Input voltage: 11.5...23.5V
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; SO16; 3A; 800V; Uin: 11.5÷23.5V; 115kHz
Type of integrated circuit: driver
Topology: flyback
Case: SO16
Output current: 3A
Output voltage: 800V
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 115kHz
Input voltage: 11.5...23.5V
на замовлення 5630 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 61.97 грн |
| SMAJ40A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4V; 27A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4V; 27A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
на замовлення 6653 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.89 грн |
| 5000+ | 6.15 грн |
| SMAJ48CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.1V; 23A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 23A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.1V; 23A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 23A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
на замовлення 986 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.68 грн |
| 21+ | 19.82 грн |
| 23+ | 17.58 грн |
| 75+ | 12.07 грн |
| 100+ | 11.51 грн |
| 300+ | 9.35 грн |
| 500+ | 8.47 грн |
| 600+ | 8.23 грн |
| SMAJ43A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 47.8V; 25A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 47.8V; 25A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
на замовлення 3899 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.10 грн |
| 27+ | 15.19 грн |
| 100+ | 10.47 грн |
| 250+ | 8.87 грн |
| 500+ | 7.83 грн |
| 1000+ | 6.87 грн |
| TS507ILT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.9MHz; Ch: 1; 2.7÷5.5VDC; SOT23-5; 45nA
Type of integrated circuit: operational amplifier
Bandwidth: 1.9MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Integrated circuit features: precision; rail-to-rail
Input offset voltage: 0.75mV
Kind of package: reel; tape
Input offset current: 45nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.9MHz; Ch: 1; 2.7÷5.5VDC; SOT23-5; 45nA
Type of integrated circuit: operational amplifier
Bandwidth: 1.9MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Integrated circuit features: precision; rail-to-rail
Input offset voltage: 0.75mV
Kind of package: reel; tape
Input offset current: 45nA
на замовлення 2428 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.78 грн |
| 13+ | 31.17 грн |
| 25+ | 29.49 грн |
| 100+ | 27.73 грн |
| 250+ | 26.78 грн |
| 500+ | 26.22 грн |
| 1000+ | 25.66 грн |
| TS431IZ-AP |
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Виробник: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±2%; TO92; Ammo Pack; 30mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±2%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 1.24...6V
Kind of package: Ammo Pack
Maximum output current: 30mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±2%; TO92; Ammo Pack; 30mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±2%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 1.24...6V
Kind of package: Ammo Pack
Maximum output current: 30mA
на замовлення 1831 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.12 грн |
| 25+ | 19.26 грн |
| 100+ | 16.94 грн |
| 250+ | 14.95 грн |
| 1000+ | 14.63 грн |
| TL1431IZ |
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Виробник: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.4%; TO92; bulk; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...105°C
Operating voltage: 2.5...36V
Kind of package: bulk
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.4%; TO92; bulk; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...105°C
Operating voltage: 2.5...36V
Kind of package: bulk
Maximum output current: 0.1A
на замовлення 2194 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.95 грн |
| 11+ | 37.57 грн |
| 25+ | 33.73 грн |
| 100+ | 29.73 грн |
| 250+ | 27.81 грн |
| 500+ | 26.78 грн |
| TS431IZT |
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Виробник: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±2%; TO92; reel,tape; 30mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±2%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 1.24...6V
Kind of package: reel; tape
Maximum output current: 30mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±2%; TO92; reel,tape; 30mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±2%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 1.24...6V
Kind of package: reel; tape
Maximum output current: 30mA
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| STL4LN80K5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 38W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 2.6Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 38W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 2.6Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STPS5L60SF |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 15A
Leakage current: 100mA
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 15A
Leakage current: 100mA
Max. forward impulse current: 100A
Kind of package: reel; tape
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| STPS5L60SFY |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. load current: 15A
Leakage current: 150mA
Max. forward impulse current: 220A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. load current: 15A
Leakage current: 150mA
Max. forward impulse current: 220A
Kind of package: reel; tape
Application: automotive industry
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| STPS5L60SY |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 15A
Leakage current: 100mA
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 15A
Leakage current: 100mA
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
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| BUL743 |
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Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 500V; 12A; 100W; TO220AB; 1.23÷1.32mm
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 12A
Power dissipation: 100W
Case: TO220AB
Pulsed collector current: 24A
Current gain: 24...80
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 500V; 12A; 100W; TO220AB; 1.23÷1.32mm
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 12A
Power dissipation: 100W
Case: TO220AB
Pulsed collector current: 24A
Current gain: 24...80
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
на замовлення 987 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 153.21 грн |
| 10+ | 83.92 грн |
| 50+ | 77.53 грн |
| 100+ | 69.54 грн |
| 250+ | 63.94 грн |
| 500+ | 63.14 грн |
| 1.5KE62A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 62V; 17.7A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 62V; 17.7A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
на замовлення 43 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.10 грн |
| 20+ | 20.30 грн |
| 21+ | 19.50 грн |
| 25+ | 18.54 грн |
| 1.5KE6V8CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
на замовлення 346 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 30.99 грн |
| 100+ | 24.30 грн |
| 250+ | 22.30 грн |
| STPS3L60SY |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.94V
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 15mA
Max. load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.94V
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 15mA
Max. load current: 10A
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| STPS3L60QRL |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO15; Ufmax: 0.79V; reel
Type of diode: Schottky rectifying
Case: DO15
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 100A
Kind of package: reel
Leakage current: 30mA
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO15; Ufmax: 0.79V; reel
Type of diode: Schottky rectifying
Case: DO15
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 100A
Kind of package: reel
Leakage current: 30mA
Max. load current: 10A
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од. на суму грн.


























