Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (124362) > Сторінка 2032 з 2073
| Фото | Назва | Виробник | Інформація |
Доступність |
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| STM32F303RDT7 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 80kB SRAM; 384kB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 4 Number of comparators: 7 Number of 12bit D/A converters: 2 Family: STM32F3 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32F303RET6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 80kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 4 Number of comparators: 7 Number of 12bit D/A converters: 2 Family: STM32F3 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32F303RET7 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 80kB SRAM; 512kB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 4 Number of comparators: 7 Number of 12bit D/A converters: 2 Family: STM32F3 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STM32F303VBT6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 87 Case: LQFP100 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 32kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 4 Number of comparators: 7 Number of 12bit D/A converters: 2 Family: STM32F3 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STD4NK60ZT4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 70W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1293 шт: термін постачання 14-30 дні (днів) |
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STD4NK60Z-1 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 70W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 70W Case: IPAK On-state resistance: 2Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement |
на замовлення 316 шт: термін постачання 14-30 дні (днів) |
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| STB4NK60Z-1 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STB14NK60ZT4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 160W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.5A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LM293D | STMicroelectronics |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 2; 1.3us; 2÷36V; SMT; SO8 Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 2 Delay time: 1.3µs Operating voltage: 2...36V Mounting: SMT Case: SO8 Kind of output: open collector |
на замовлення 3399 шт: термін постачання 14-30 дні (днів) |
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L6565D | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: driver; PFC controller; SO8; Ch: 1; 10.3÷18VDC; 1MHz Operating voltage: 10.3...18V DC Mounting: SMD Operating temperature: -40...150°C Kind of integrated circuit: PFC controller Kind of package: tube Application: SMPS Number of channels: 1 Frequency: 1MHz Case: SO8 Type of integrated circuit: driver |
на замовлення 74 шт: термін постачання 14-30 дні (днів) |
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L6565N | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: driver; PFC controller; DIP8; Ch: 1; 10.3÷18VDC; 5mA Type of integrated circuit: driver Kind of integrated circuit: PFC controller Case: DIP8 Number of channels: 1 Mounting: THT Operating temperature: -40...150°C Operating current: 5mA Operating voltage: 10.3...18V DC Application: SMPS |
на замовлення 168 шт: термін постачання 14-30 дні (днів) |
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L6565DTR | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: driver; PFC controller; SO8; 10.3÷18VDC; 1MHz Operating voltage: 10.3...18V DC Mounting: SMD Operating temperature: -40...150°C Kind of integrated circuit: PFC controller Kind of package: reel; tape Application: SMPS Frequency: 1MHz Case: SO8 Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJD122T4 | STMicroelectronics |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 8A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 100...1000 Mounting: SMD Kind of package: reel; tape |
на замовлення 1490 шт: термін постачання 14-30 дні (днів) |
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MJD112T4 | STMicroelectronics |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 2A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 20W Case: DPAK Mounting: SMD Kind of package: reel; tape Frequency: 25MHz |
на замовлення 3352 шт: термін постачання 14-30 дні (днів) |
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BD679A | STMicroelectronics |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 80V; 4A; 40W; SOT32 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 4A Power dissipation: 40W Case: SOT32 Mounting: THT Kind of package: tube Current gain: 750 |
на замовлення 1749 шт: термін постачання 14-30 дні (днів) |
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BD679 | STMicroelectronics |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 80V; 4A; 40W; SOT32 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 4A Power dissipation: 40W Case: SOT32 Mounting: THT Kind of package: tube Current gain: 750 |
на замовлення 1132 шт: термін постачання 14-30 дні (днів) |
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TIP120 | STMicroelectronics |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 60V; 5A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 1159 шт: термін постачання 14-30 дні (днів) |
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TIP121 | STMicroelectronics |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 80V; 5A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 5A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 1574 шт: термін постачання 14-30 дні (днів) |
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| PM8800ATR | STMicroelectronics |
Category: ETHERNET interfaces -integrated circuitsDescription: IC: interface; power controller; PoE Ethernet; HTSSOP16; -40÷85°C Interface: PoE Ethernet Kind of integrated circuit: power controller Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Case: HTSSOP16 Type of integrated circuit: interface |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STM32F446RCT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 180MHz; LQFP64; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 180MHz Mounting: SMD Number of inputs/outputs: 50 Case: LQFP64 Supply voltage: 1.7...3.6V DC Interface: CAN; EBI; EMI; I2C; IrDA; LIN; SAI; SD; SPDIF; SPI; USART; USB; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM Memory: 128kB SRAM; 256kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 16 Number of 12bit D/A converters: 2 Family: STM32F4 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STM32F446RCT6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 180MHz; LQFP64; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 180MHz Mounting: SMD Number of inputs/outputs: 50 Case: LQFP64 Supply voltage: 1.8...3.6V DC Interface: CAN x2; HDMI CEC; I2C x4; QUAD SPI; SAI x 2; SDIO; SPI x4; UART x2; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 128kB SRAM; 256kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 16 Number of 12bit D/A converters: 2 Number of 16bit timers: 14 Family: STM32F4 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BAS70-04WFILM | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double series Max. forward voltage: 0.75V Max. forward impulse current: 1A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STPS60H100CT | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.98V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.98V Max. load current: 60A Max. forward impulse current: 0.3kA Leakage current: 10mA Kind of package: tube Heatsink thickness: 1.23...1.32mm |
на замовлення 81 шт: термін постачання 14-30 дні (днів) |
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STPS30H100CT | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.93V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.93V Max. load current: 30A Max. forward impulse current: 250A Leakage current: 6mA Kind of package: tube Heatsink thickness: 1.23...1.32mm |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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STGF10H60DF | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 10A; 30W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 30W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 57nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 186 шт: термін постачання 14-30 дні (днів) |
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STGF10NB60SD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 23A; 25W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 23A Power dissipation: 25W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 33nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 38 шт: термін постачання 14-30 дні (днів) |
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SRK2000A | STMicroelectronics |
Category: Integrated circuits - othersDescription: IC: driver; PWM controller; SO8; 4.5÷32VDC Type of integrated circuit: driver Kind of integrated circuit: PWM controller Case: SO8 Mounting: SMD Operating temperature: -40...150°C Operating voltage: 4.5...32V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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USB6B1RL | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; 40A; 500W; unidirectional; SO8; Ch: 2; ESD Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 40A Peak pulse power dissipation: 0.5kW Semiconductor structure: unidirectional Mounting: SMD Case: SO8 Max. off-state voltage: 5V Leakage current: 10µA Number of channels: 2 Kind of package: reel; tape Application: Ethernet; USB Version: ESD |
на замовлення 3129 шт: термін постачання 14-30 дні (днів) |
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t835-600b | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; DPAK; Igt: 35mA; Ifsm: 80A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 35mA Mounting: SMD Kind of package: tube Max. forward impulse current: 80A |
на замовлення 170 шт: термін постачання 14-30 дні (днів) |
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T835-600B-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; DPAK; Igt: 35mA; Ifsm: 80A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 35mA Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 80A |
на замовлення 1875 шт: термін постачання 14-30 дні (днів) |
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ESDA5V3L | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.9V; 300W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Breakdown voltage: 5.9V Peak pulse power dissipation: 0.3kW Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 3V Leakage current: 2µA Number of channels: 2 Kind of package: reel; tape Version: ESD |
на замовлення 23719 шт: термін постачання 14-30 дні (днів) |
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ESDALC6V1-1U2 | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 20W; 6.1÷8V; 2A; unidirectional; 12pF; ESD; Case: 0201 Type of diode: TVS Mounting: SMD Version: ESD Semiconductor structure: unidirectional Capacitance: 12pF Leakage current: 0.1µA Max. forward impulse current: 2A Breakdown voltage: 6.1...8V Peak pulse power dissipation: 20W Case - inch: 0201 Case - mm: 0603 |
на замовлення 2479 шт: термін постачання 14-30 дні (днів) |
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ESDA6V1W5 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.1V; 150W; quadruple,common anode; SOT323-5L Type of diode: TVS array Breakdown voltage: 6.1V Peak pulse power dissipation: 0.15kW Semiconductor structure: common anode; quadruple Mounting: SMD Case: SOT323-5L Max. off-state voltage: 3V Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape Version: ESD |
на замовлення 3464 шт: термін постачання 14-30 дні (днів) |
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ESDA8V2-1J | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 500W; 8.2V; 25A; unidirectional; SOD323; reel,tape; ESD Type of diode: TVS Mounting: SMD Version: ESD Semiconductor structure: unidirectional Case: SOD323 Kind of package: reel; tape Leakage current: 0.5µA Max. forward impulse current: 25A Max. off-state voltage: 5V Breakdown voltage: 8.2V Peak pulse power dissipation: 0.5kW |
на замовлення 1411 шт: термін постачання 14-30 дні (днів) |
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ESDA6V1SC6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.1V; 300W; common anode; SOT23-6; Ch: 4; ESD Type of diode: TVS array Breakdown voltage: 6.1V Peak pulse power dissipation: 0.3kW Semiconductor structure: common anode Mounting: SMD Case: SOT23-6 Max. off-state voltage: 5.25V Leakage current: 2µA Number of channels: 4 Kind of package: reel; tape Version: ESD |
на замовлення 2621 шт: термін постачання 14-30 дні (днів) |
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ESDA5V3SC6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.3V; 22A; 300W; quadruple,common anode; SOT23-6 Type of diode: TVS array Breakdown voltage: 5.3V Max. forward impulse current: 22A Peak pulse power dissipation: 0.3kW Semiconductor structure: common anode; quadruple Mounting: SMD Case: SOT23-6 Max. off-state voltage: 3V Leakage current: 2µA Number of channels: 4 Kind of package: reel; tape Version: ESD |
на замовлення 6787 шт: термін постачання 14-30 дні (днів) |
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ESDA6V1BC6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.1V; 3A; 80W; SOT23-6; Ch: 4; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6.1V Max. forward impulse current: 3A Peak pulse power dissipation: 80W Semiconductor structure: bidirectional; common cathode; quadruple Mounting: SMD Case: SOT23-6 Max. off-state voltage: 5V Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape Version: ESD |
на замовлення 9288 шт: термін постачання 14-30 дні (днів) |
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ESDALC6V1W5 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.1V; 25W; quadruple,common anode; SOT323-5L Type of diode: TVS array Mounting: SMD Version: ESD Semiconductor structure: common anode; quadruple Case: SOT323-5L Kind of package: reel; tape Leakage current: 1µA Number of channels: 4 Max. off-state voltage: 3V Breakdown voltage: 6.1V Peak pulse power dissipation: 25W |
на замовлення 2537 шт: термін постачання 14-30 дні (днів) |
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ESDA12-1K | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 450W; 13V; 16A; unidirectional; SOD523; reel,tape; ESD Type of diode: TVS Mounting: SMD Version: ESD Semiconductor structure: unidirectional Case: SOD523 Kind of package: reel; tape Leakage current: 1mA Max. forward impulse current: 16A Max. off-state voltage: 10V Breakdown voltage: 13V Peak pulse power dissipation: 450W |
на замовлення 3845 шт: термін постачання 14-30 дні (днів) |
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ESDA6V1-5SC6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.1V; 100W; unidirectional; SOT23-6; Ch: 5; ESD Type of diode: TVS array Breakdown voltage: 6.1V Peak pulse power dissipation: 0.1kW Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-6 Max. off-state voltage: 3V Leakage current: 1µA Number of channels: 5 Kind of package: reel; tape Version: ESD |
на замовлення 975 шт: термін постачання 14-30 дні (днів) |
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ESDALC12-1T2 | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 50W; 12V; 2A; unidirectional; SOD882T; reel,tape; ESD Type of diode: TVS Mounting: SMD Version: ESD Semiconductor structure: unidirectional Case: SOD882T Kind of package: reel; tape Leakage current: 0.2µA Max. forward impulse current: 2A Max. off-state voltage: 10V Breakdown voltage: 12V Peak pulse power dissipation: 50W |
на замовлення 7958 шт: термін постачання 14-30 дні (днів) |
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ESDA6V1SC5 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.1V; 300W; common anode; SOT23-5; Ch: 4; ESD Type of diode: TVS array Breakdown voltage: 6.1V Peak pulse power dissipation: 0.3kW Semiconductor structure: common anode Mounting: SMD Case: SOT23-5 Max. off-state voltage: 5.25V Leakage current: 2µA Number of channels: 4 Kind of package: reel; tape Version: ESD |
на замовлення 3288 шт: термін постачання 14-30 дні (днів) |
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ESDAVLC6-2BLY | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; ESD Type of diode: TVS array Mounting: SMD Version: ESD |
на замовлення 1030 шт: термін постачання 14-30 дні (днів) |
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ESDA6V1U1RL | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.1V; 200W; common anode; SO8; Ch: 6; ESD Type of diode: TVS array Breakdown voltage: 6.1V Peak pulse power dissipation: 0.2kW Semiconductor structure: common anode Mounting: SMD Case: SO8 Max. off-state voltage: 5V Leakage current: 2µA Number of channels: 6 Version: ESD |
на замовлення 1633 шт: термін постачання 14-30 дні (днів) |
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ESDA25L | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 30V; 300W; double,common anode; SOT23; Ch: 2; ESD Type of diode: TVS array Mounting: SMD Version: ESD Semiconductor structure: common anode; double Case: SOT23 Kind of package: reel; tape Leakage current: 1µA Number of channels: 2 Max. off-state voltage: 24V Breakdown voltage: 30V Peak pulse power dissipation: 0.3kW |
на замовлення 1255 шт: термін постачання 14-30 дні (днів) |
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ESDA25W | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 30V; 9A; 400W; double,common anode; SOT323; Ch: 1 Type of diode: TVS array Mounting: SMD Version: ESD Semiconductor structure: common anode; double Case: SOT323 Kind of package: reel; tape Leakage current: 1mA Number of channels: 1 Max. forward impulse current: 9A Max. off-state voltage: 25V Breakdown voltage: 30V Peak pulse power dissipation: 0.4kW |
на замовлення 2975 шт: термін постачання 14-30 дні (днів) |
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ESDA18-1K | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 450W; 19V; 12A; unidirectional; SOD523; reel,tape; ESD Type of diode: TVS Mounting: SMD Version: ESD Semiconductor structure: unidirectional Case: SOD523 Kind of package: reel; tape Leakage current: 1mA Max. forward impulse current: 12A Max. off-state voltage: 15V Breakdown voltage: 19V Peak pulse power dissipation: 450W |
на замовлення 1591 шт: термін постачання 14-30 дні (днів) |
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ESDALC6V1-5M6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.1V; 3A; 30W; common anode; MicroQFN; Ch: 5; ESD Type of diode: TVS array Mounting: SMD Version: ESD Semiconductor structure: common anode Case: MicroQFN Leakage current: 70nA Number of channels: 5 Max. forward impulse current: 3A Breakdown voltage: 6.1V Peak pulse power dissipation: 30W |
на замовлення 2977 шт: термін постачання 14-30 дні (днів) |
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ESDALC6V1-5P6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.1V; 2.5A; 30W; unidirectional,common anode Type of diode: TVS array Breakdown voltage: 6.1V Max. forward impulse current: 2.5A Peak pulse power dissipation: 30W Semiconductor structure: common anode; unidirectional Mounting: SMD Case: SOT666 Max. off-state voltage: 5V Leakage current: 70nA Number of channels: 5 Kind of package: reel; tape Version: ESD |
на замовлення 2690 шт: термін постачання 14-30 дні (днів) |
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ESDA5V3SC6Y | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.3V; 22A; 400W; quadruple,common anode; SOT23-6 Type of diode: TVS array Breakdown voltage: 5.3V Max. forward impulse current: 22A Peak pulse power dissipation: 0.4kW Semiconductor structure: common anode; quadruple Mounting: SMD Case: SOT23-6 Max. off-state voltage: 3V Leakage current: 2µA Number of channels: 4 Kind of package: reel; tape Application: automotive industry Version: ESD |
на замовлення 2840 шт: термін постачання 14-30 дні (днів) |
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ESDA37W | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; ESD Type of diode: TVS array Mounting: SMD Version: ESD |
на замовлення 2818 шт: термін постачання 14-30 дні (днів) |
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ESDALC6V1P6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.1V; 30W; SOT666IP; Ch: 4; ESD Type of diode: TVS array Mounting: SMD Version: ESD Semiconductor structure: common anode; quadruple; unidirectional Case: SOT666IP Leakage current: 0.1µA Number of channels: 4 Max. off-state voltage: 3V Breakdown voltage: 6.1V Peak pulse power dissipation: 30W |
на замовлення 2655 шт: термін постачання 14-30 дні (днів) |
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ESDA6V1SC6Y | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.1V; 300W; common anode; SOT23-6; Ch: 4; ESD Type of diode: TVS array Breakdown voltage: 6.1V Peak pulse power dissipation: 0.3kW Semiconductor structure: common anode Mounting: SMD Case: SOT23-6 Max. off-state voltage: 5.25V Leakage current: 2µA Number of channels: 4 Kind of package: reel; tape Version: ESD |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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ESDA25-4BP6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 50W; bidirectional; ESD Type of diode: TVS array Mounting: SMD Version: ESD Semiconductor structure: bidirectional Leakage current: 1µA Max. off-state voltage: 24V Peak pulse power dissipation: 50W |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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ESDA5V3LY | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.9V; 300W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Breakdown voltage: 5.9V Peak pulse power dissipation: 0.3kW Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 3V Leakage current: 2µA Number of channels: 2 Kind of package: reel; tape Application: automotive industry Version: ESD |
на замовлення 2979 шт: термін постачання 14-30 дні (днів) |
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ESDA25SC6Y | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 30V; 9A; unidirectional; SOT23-6; reel,tape; Ch: 1 Type of diode: TVS Mounting: SMD Version: ESD Semiconductor structure: unidirectional Case: SOT23-6 Kind of package: reel; tape Leakage current: 1mA Number of channels: 1 Max. forward impulse current: 9A Max. off-state voltage: 24V Breakdown voltage: 30V Peak pulse power dissipation: 0.4kW |
на замовлення 2985 шт: термін постачання 14-30 дні (днів) |
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ESDA14V2BP6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 14.2V; 50W; SOT666; Ch: 4; reel,tape; ESD Type of diode: TVS array Mounting: SMD Version: ESD Semiconductor structure: bidirectional; common anode; quadruple Case: SOT666 Kind of package: reel; tape Leakage current: 1µA Number of channels: 4 Max. off-state voltage: 12V Breakdown voltage: 14.2V Peak pulse power dissipation: 50W |
на замовлення 427 шт: термін постачання 14-30 дні (днів) |
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ESDA25W5 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 25V; 15A; 150W; quadruple,common anode; Ch: 4 Type of diode: TVS array Mounting: SMD Version: ESD Semiconductor structure: common anode; quadruple Case: SOT323-5L Kind of package: reel; tape Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 15A Max. off-state voltage: 24V Breakdown voltage: 25V Peak pulse power dissipation: 0.15kW |
на замовлення 635 шт: термін постачання 14-30 дні (днів) |
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ESDA6V1-5P6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.1V; 150W; common anode; SOT666; Ch: 5; reel,tape Type of diode: TVS array Breakdown voltage: 6.1V Peak pulse power dissipation: 0.15kW Semiconductor structure: common anode Mounting: SMD Case: SOT666 Max. off-state voltage: 3V Leakage current: 0.5µA Number of channels: 5 Kind of package: reel; tape Version: ESD |
на замовлення 86 шт: термін постачання 14-30 дні (днів) |
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| ESDA25SC6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; ESD Type of diode: TVS array Mounting: SMD Version: ESD |
на замовлення 2800 шт: термін постачання 14-30 дні (днів) |
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| STM32F303RDT7 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 80kB SRAM; 384kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 80kB SRAM; 384kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
Kind of core: 32-bit
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| STM32F303RET6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 80kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 80kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
Kind of core: 32-bit
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| STM32F303RET7 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 80kB SRAM; 512kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 80kB SRAM; 512kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
Kind of core: 32-bit
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| STM32F303VBT6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 32kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 32kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
Kind of core: 32-bit
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| STD4NK60ZT4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1293 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 95.81 грн |
| 10+ | 51.36 грн |
| 20+ | 48.34 грн |
| 100+ | 40.37 грн |
| 200+ | 36.42 грн |
| 500+ | 32.31 грн |
| 1000+ | 30.72 грн |
| STD4NK60Z-1 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 70W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 70W
Case: IPAK
On-state resistance: 2Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 70W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 70W
Case: IPAK
On-state resistance: 2Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 316 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.69 грн |
| 11+ | 40.20 грн |
| 75+ | 27.95 грн |
| 150+ | 24.84 грн |
| STB4NK60Z-1 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
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| STB14NK60ZT4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 160W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 160W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| LM293D |
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Виробник: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 1.3us; 2÷36V; SMT; SO8
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Delay time: 1.3µs
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Kind of output: open collector
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 1.3us; 2÷36V; SMT; SO8
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Delay time: 1.3µs
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Kind of output: open collector
на замовлення 3399 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.44 грн |
| 16+ | 26.60 грн |
| 100+ | 23.42 грн |
| 500+ | 22.41 грн |
| 1000+ | 20.06 грн |
| 2500+ | 18.72 грн |
| L6565D |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; SO8; Ch: 1; 10.3÷18VDC; 1MHz
Operating voltage: 10.3...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of integrated circuit: PFC controller
Kind of package: tube
Application: SMPS
Number of channels: 1
Frequency: 1MHz
Case: SO8
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; SO8; Ch: 1; 10.3÷18VDC; 1MHz
Operating voltage: 10.3...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of integrated circuit: PFC controller
Kind of package: tube
Application: SMPS
Number of channels: 1
Frequency: 1MHz
Case: SO8
Type of integrated circuit: driver
на замовлення 74 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 96.71 грн |
| 6+ | 77.21 грн |
| 10+ | 66.30 грн |
| 25+ | 61.27 грн |
| L6565N |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; DIP8; Ch: 1; 10.3÷18VDC; 5mA
Type of integrated circuit: driver
Kind of integrated circuit: PFC controller
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -40...150°C
Operating current: 5mA
Operating voltage: 10.3...18V DC
Application: SMPS
Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; DIP8; Ch: 1; 10.3÷18VDC; 5mA
Type of integrated circuit: driver
Kind of integrated circuit: PFC controller
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -40...150°C
Operating current: 5mA
Operating voltage: 10.3...18V DC
Application: SMPS
на замовлення 168 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 109.10 грн |
| 10+ | 90.64 грн |
| 25+ | 83.93 грн |
| L6565DTR |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; SO8; 10.3÷18VDC; 1MHz
Operating voltage: 10.3...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of integrated circuit: PFC controller
Kind of package: reel; tape
Application: SMPS
Frequency: 1MHz
Case: SO8
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; SO8; 10.3÷18VDC; 1MHz
Operating voltage: 10.3...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of integrated circuit: PFC controller
Kind of package: reel; tape
Application: SMPS
Frequency: 1MHz
Case: SO8
Type of integrated circuit: driver
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| MJD122T4 |
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Виробник: STMicroelectronics
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 100...1000
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 100...1000
Mounting: SMD
Kind of package: reel; tape
на замовлення 1490 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 73.21 грн |
| 10+ | 42.72 грн |
| 100+ | 28.62 грн |
| 500+ | 21.23 грн |
| 1000+ | 18.38 грн |
| MJD112T4 | ![]() |
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Виробник: STMicroelectronics
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Frequency: 25MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Frequency: 25MHz
на замовлення 3352 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 63.27 грн |
| 11+ | 40.28 грн |
| 100+ | 24.84 грн |
| 500+ | 17.54 грн |
| 1000+ | 15.19 грн |
| 2500+ | 14.69 грн |
| BD679A | ![]() |
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Виробник: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Mounting: THT
Kind of package: tube
Current gain: 750
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Mounting: THT
Kind of package: tube
Current gain: 750
на замовлення 1749 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 60.56 грн |
| 14+ | 30.55 грн |
| 16+ | 26.94 грн |
| 50+ | 20.73 грн |
| 100+ | 18.80 грн |
| 500+ | 15.44 грн |
| 1000+ | 14.35 грн |
| BD679 |
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Виробник: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Mounting: THT
Kind of package: tube
Current gain: 750
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Mounting: THT
Kind of package: tube
Current gain: 750
на замовлення 1132 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.92 грн |
| 19+ | 23.00 грн |
| 22+ | 19.47 грн |
| 50+ | 12.09 грн |
| TIP120 |
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Виробник: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 1159 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 64.17 грн |
| 12+ | 37.60 грн |
| 25+ | 31.98 грн |
| 50+ | 28.54 грн |
| 100+ | 25.51 грн |
| 500+ | 19.97 грн |
| 1000+ | 18.21 грн |
| TIP121 |
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Виробник: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 1574 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.65 грн |
| 10+ | 42.63 грн |
| 13+ | 34.49 грн |
| 25+ | 24.76 грн |
| 50+ | 21.74 грн |
| PM8800ATR |
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Виробник: STMicroelectronics
Category: ETHERNET interfaces -integrated circuits
Description: IC: interface; power controller; PoE Ethernet; HTSSOP16; -40÷85°C
Interface: PoE Ethernet
Kind of integrated circuit: power controller
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: HTSSOP16
Type of integrated circuit: interface
Category: ETHERNET interfaces -integrated circuits
Description: IC: interface; power controller; PoE Ethernet; HTSSOP16; -40÷85°C
Interface: PoE Ethernet
Kind of integrated circuit: power controller
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: HTSSOP16
Type of integrated circuit: interface
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В кошику
од. на суму грн.
| STM32F446RCT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP64; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 50
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: CAN; EBI; EMI; I2C; IrDA; LIN; SAI; SD; SPDIF; SPI; USART; USB; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 128kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Family: STM32F4
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP64; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 50
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: CAN; EBI; EMI; I2C; IrDA; LIN; SAI; SD; SPDIF; SPI; USART; USB; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 128kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Family: STM32F4
Kind of core: 32-bit
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В кошику
од. на суму грн.
| STM32F446RCT6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 50
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN x2; HDMI CEC; I2C x4; QUAD SPI; SAI x 2; SDIO; SPI x4; UART x2; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 128kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 50
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN x2; HDMI CEC; I2C x4; QUAD SPI; SAI x 2; SDIO; SPI x4; UART x2; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 128kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| BAS70-04WFILM |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 0.75V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 0.75V
Max. forward impulse current: 1A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| STPS60H100CT |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.98V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.98V
Max. load current: 60A
Max. forward impulse current: 0.3kA
Leakage current: 10mA
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.98V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.98V
Max. load current: 60A
Max. forward impulse current: 0.3kA
Leakage current: 10mA
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
на замовлення 81 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.75 грн |
| 5+ | 113.30 грн |
| 10+ | 111.62 грн |
| STPS30H100CT |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.93V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.93V
Max. load current: 30A
Max. forward impulse current: 250A
Leakage current: 6mA
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.93V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.93V
Max. load current: 30A
Max. forward impulse current: 250A
Leakage current: 6mA
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
на замовлення 3 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 150.94 грн |
| STGF10H60DF |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 30W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 30W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 186 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 109.10 грн |
| 50+ | 85.60 грн |
| STGF10NB60SD |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 23A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 23A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 38 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 150.03 грн |
| 10+ | 114.14 грн |
| SRK2000A |
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Виробник: STMicroelectronics
Category: Integrated circuits - others
Description: IC: driver; PWM controller; SO8; 4.5÷32VDC
Type of integrated circuit: driver
Kind of integrated circuit: PWM controller
Case: SO8
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 4.5...32V DC
Category: Integrated circuits - others
Description: IC: driver; PWM controller; SO8; 4.5÷32VDC
Type of integrated circuit: driver
Kind of integrated circuit: PWM controller
Case: SO8
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 4.5...32V DC
товару немає в наявності
В кошику
од. на суму грн.
| USB6B1RL |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 40A; 500W; unidirectional; SO8; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 40A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 5V
Leakage current: 10µA
Number of channels: 2
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 40A; 500W; unidirectional; SO8; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 40A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 5V
Leakage current: 10µA
Number of channels: 2
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
на замовлення 3129 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.19 грн |
| 11+ | 38.77 грн |
| 12+ | 36.76 грн |
| 50+ | 31.56 грн |
| 100+ | 29.12 грн |
| 500+ | 23.58 грн |
| 1000+ | 21.15 грн |
| 2500+ | 17.96 грн |
| t835-600b |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 35mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 35mA
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 80A
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 35mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 35mA
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 80A
на замовлення 170 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 85.86 грн |
| 10+ | 44.15 грн |
| 75+ | 36.09 грн |
| 150+ | 34.07 грн |
| T835-600B-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 35mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 80A
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 35mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 80A
на замовлення 1875 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.46 грн |
| 11+ | 39.70 грн |
| 50+ | 33.74 грн |
| 100+ | 31.30 грн |
| 500+ | 25.43 грн |
| 1000+ | 23.00 грн |
| ESDA5V3L | ![]() |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.9V; 300W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 5.9V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Leakage current: 2µA
Number of channels: 2
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.9V; 300W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 5.9V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Leakage current: 2µA
Number of channels: 2
Kind of package: reel; tape
Version: ESD
на замовлення 23719 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.40 грн |
| 24+ | 17.54 грн |
| 50+ | 11.92 грн |
| 100+ | 9.85 грн |
| 500+ | 6.38 грн |
| 1000+ | 5.35 грн |
| 3000+ | 4.17 грн |
| 6000+ | 3.63 грн |
| 9000+ | 3.37 грн |
| ESDALC6V1-1U2 |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 20W; 6.1÷8V; 2A; unidirectional; 12pF; ESD; Case: 0201
Type of diode: TVS
Mounting: SMD
Version: ESD
Semiconductor structure: unidirectional
Capacitance: 12pF
Leakage current: 0.1µA
Max. forward impulse current: 2A
Breakdown voltage: 6.1...8V
Peak pulse power dissipation: 20W
Case - inch: 0201
Case - mm: 0603
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 20W; 6.1÷8V; 2A; unidirectional; 12pF; ESD; Case: 0201
Type of diode: TVS
Mounting: SMD
Version: ESD
Semiconductor structure: unidirectional
Capacitance: 12pF
Leakage current: 0.1µA
Max. forward impulse current: 2A
Breakdown voltage: 6.1...8V
Peak pulse power dissipation: 20W
Case - inch: 0201
Case - mm: 0603
на замовлення 2479 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.65 грн |
| 46+ | 9.23 грн |
| 50+ | 8.39 грн |
| 100+ | 5.87 грн |
| 250+ | 4.87 грн |
| 500+ | 4.14 грн |
| 1000+ | 3.78 грн |
| 1300+ | 3.68 грн |
| ESDA6V1W5 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 150W; quadruple,common anode; SOT323-5L
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 0.15kW
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SOT323-5L
Max. off-state voltage: 3V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 150W; quadruple,common anode; SOT323-5L
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 0.15kW
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SOT323-5L
Max. off-state voltage: 3V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Version: ESD
на замовлення 3464 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.69 грн |
| 28+ | 15.19 грн |
| 50+ | 10.94 грн |
| 100+ | 9.36 грн |
| 500+ | 6.45 грн |
| 1000+ | 5.76 грн |
| 1500+ | 5.36 грн |
| 3000+ | 4.75 грн |
| ESDA8V2-1J |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 500W; 8.2V; 25A; unidirectional; SOD323; reel,tape; ESD
Type of diode: TVS
Mounting: SMD
Version: ESD
Semiconductor structure: unidirectional
Case: SOD323
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward impulse current: 25A
Max. off-state voltage: 5V
Breakdown voltage: 8.2V
Peak pulse power dissipation: 0.5kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 500W; 8.2V; 25A; unidirectional; SOD323; reel,tape; ESD
Type of diode: TVS
Mounting: SMD
Version: ESD
Semiconductor structure: unidirectional
Case: SOD323
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward impulse current: 25A
Max. off-state voltage: 5V
Breakdown voltage: 8.2V
Peak pulse power dissipation: 0.5kW
на замовлення 1411 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.46 грн |
| 37+ | 11.41 грн |
| 43+ | 9.90 грн |
| 57+ | 7.39 грн |
| 100+ | 4.33 грн |
| 200+ | 3.46 грн |
| 500+ | 3.15 грн |
| ESDA6V1SC6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 300W; common anode; SOT23-6; Ch: 4; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5.25V
Leakage current: 2µA
Number of channels: 4
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 300W; common anode; SOT23-6; Ch: 4; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5.25V
Leakage current: 2µA
Number of channels: 4
Kind of package: reel; tape
Version: ESD
на замовлення 2621 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.40 грн |
| 30+ | 14.27 грн |
| 37+ | 11.58 грн |
| 59+ | 7.17 грн |
| 100+ | 6.04 грн |
| 250+ | 5.06 грн |
| 500+ | 4.53 грн |
| 1000+ | 4.15 грн |
| ESDA5V3SC6 | ![]() |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.3V; 22A; 300W; quadruple,common anode; SOT23-6
Type of diode: TVS array
Breakdown voltage: 5.3V
Max. forward impulse current: 22A
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 3V
Leakage current: 2µA
Number of channels: 4
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.3V; 22A; 300W; quadruple,common anode; SOT23-6
Type of diode: TVS array
Breakdown voltage: 5.3V
Max. forward impulse current: 22A
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 3V
Leakage current: 2µA
Number of channels: 4
Kind of package: reel; tape
Version: ESD
на замовлення 6787 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.13 грн |
| 67+ | 6.29 грн |
| 100+ | 5.71 грн |
| 500+ | 5.20 грн |
| 3000+ | 4.87 грн |
| ESDA6V1BC6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 3A; 80W; SOT23-6; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Max. forward impulse current: 3A
Peak pulse power dissipation: 80W
Semiconductor structure: bidirectional; common cathode; quadruple
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 3A; 80W; SOT23-6; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Max. forward impulse current: 3A
Peak pulse power dissipation: 80W
Semiconductor structure: bidirectional; common cathode; quadruple
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Version: ESD
на замовлення 9288 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.31 грн |
| 24+ | 17.79 грн |
| 28+ | 15.27 грн |
| 50+ | 10.57 грн |
| 100+ | 9.15 грн |
| 500+ | 7.05 грн |
| 1000+ | 6.46 грн |
| 3000+ | 6.29 грн |
| ESDALC6V1W5 | ![]() |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 25W; quadruple,common anode; SOT323-5L
Type of diode: TVS array
Mounting: SMD
Version: ESD
Semiconductor structure: common anode; quadruple
Case: SOT323-5L
Kind of package: reel; tape
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 3V
Breakdown voltage: 6.1V
Peak pulse power dissipation: 25W
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 25W; quadruple,common anode; SOT323-5L
Type of diode: TVS array
Mounting: SMD
Version: ESD
Semiconductor structure: common anode; quadruple
Case: SOT323-5L
Kind of package: reel; tape
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 3V
Breakdown voltage: 6.1V
Peak pulse power dissipation: 25W
на замовлення 2537 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 28.02 грн |
| 30+ | 14.35 грн |
| 50+ | 9.06 грн |
| 100+ | 7.97 грн |
| 250+ | 6.80 грн |
| 500+ | 6.04 грн |
| 1000+ | 5.29 грн |
| 1500+ | 4.95 грн |
| ESDA12-1K |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 450W; 13V; 16A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Mounting: SMD
Version: ESD
Semiconductor structure: unidirectional
Case: SOD523
Kind of package: reel; tape
Leakage current: 1mA
Max. forward impulse current: 16A
Max. off-state voltage: 10V
Breakdown voltage: 13V
Peak pulse power dissipation: 450W
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 450W; 13V; 16A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Mounting: SMD
Version: ESD
Semiconductor structure: unidirectional
Case: SOD523
Kind of package: reel; tape
Leakage current: 1mA
Max. forward impulse current: 16A
Max. off-state voltage: 10V
Breakdown voltage: 13V
Peak pulse power dissipation: 450W
на замовлення 3845 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 18.08 грн |
| 31+ | 13.76 грн |
| 36+ | 11.75 грн |
| 47+ | 9.06 грн |
| 75+ | 6.44 грн |
| 100+ | 5.92 грн |
| 500+ | 4.06 грн |
| 1000+ | 3.65 грн |
| 3000+ | 3.48 грн |
| ESDA6V1-5SC6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 100W; unidirectional; SOT23-6; Ch: 5; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 0.1kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 3V
Leakage current: 1µA
Number of channels: 5
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 100W; unidirectional; SOT23-6; Ch: 5; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 0.1kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 3V
Leakage current: 1µA
Number of channels: 5
Kind of package: reel; tape
Version: ESD
на замовлення 975 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.88 грн |
| 30+ | 14.27 грн |
| 33+ | 13.01 грн |
| 50+ | 12.00 грн |
| 100+ | 10.99 грн |
| 500+ | 8.73 грн |
| ESDALC12-1T2 |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 12V; 2A; unidirectional; SOD882T; reel,tape; ESD
Type of diode: TVS
Mounting: SMD
Version: ESD
Semiconductor structure: unidirectional
Case: SOD882T
Kind of package: reel; tape
Leakage current: 0.2µA
Max. forward impulse current: 2A
Max. off-state voltage: 10V
Breakdown voltage: 12V
Peak pulse power dissipation: 50W
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 12V; 2A; unidirectional; SOD882T; reel,tape; ESD
Type of diode: TVS
Mounting: SMD
Version: ESD
Semiconductor structure: unidirectional
Case: SOD882T
Kind of package: reel; tape
Leakage current: 0.2µA
Max. forward impulse current: 2A
Max. off-state voltage: 10V
Breakdown voltage: 12V
Peak pulse power dissipation: 50W
на замовлення 7958 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 193+ | 2.35 грн |
| 200+ | 2.10 грн |
| 209+ | 2.01 грн |
| 224+ | 1.88 грн |
| 500+ | 1.83 грн |
| ESDA6V1SC5 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 300W; common anode; SOT23-5; Ch: 4; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode
Mounting: SMD
Case: SOT23-5
Max. off-state voltage: 5.25V
Leakage current: 2µA
Number of channels: 4
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 300W; common anode; SOT23-5; Ch: 4; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode
Mounting: SMD
Case: SOT23-5
Max. off-state voltage: 5.25V
Leakage current: 2µA
Number of channels: 4
Kind of package: reel; tape
Version: ESD
на замовлення 3288 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 26.21 грн |
| 22+ | 19.81 грн |
| 24+ | 17.62 грн |
| 50+ | 13.18 грн |
| 100+ | 11.58 грн |
| 500+ | 8.48 грн |
| 1000+ | 7.30 грн |
| 1500+ | 7.22 грн |
| ESDAVLC6-2BLY |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; ESD
Type of diode: TVS array
Mounting: SMD
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; ESD
Type of diode: TVS array
Mounting: SMD
Version: ESD
на замовлення 1030 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.65 грн |
| 45+ | 9.48 грн |
| 48+ | 8.84 грн |
| 100+ | 6.62 грн |
| 250+ | 6.11 грн |
| 500+ | 5.55 грн |
| 1000+ | 4.83 грн |
| ESDA6V1U1RL |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 200W; common anode; SO8; Ch: 6; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 0.2kW
Semiconductor structure: common anode
Mounting: SMD
Case: SO8
Max. off-state voltage: 5V
Leakage current: 2µA
Number of channels: 6
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 200W; common anode; SO8; Ch: 6; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 0.2kW
Semiconductor structure: common anode
Mounting: SMD
Case: SO8
Max. off-state voltage: 5V
Leakage current: 2µA
Number of channels: 6
Version: ESD
на замовлення 1633 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.73 грн |
| 20+ | 21.74 грн |
| 50+ | 16.62 грн |
| 75+ | 15.53 грн |
| 100+ | 14.77 грн |
| 500+ | 10.99 грн |
| 1000+ | 9.48 грн |
| ESDA25L |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 30V; 300W; double,common anode; SOT23; Ch: 2; ESD
Type of diode: TVS array
Mounting: SMD
Version: ESD
Semiconductor structure: common anode; double
Case: SOT23
Kind of package: reel; tape
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 30V
Peak pulse power dissipation: 0.3kW
Category: Protection diodes - arrays
Description: Diode: TVS array; 30V; 300W; double,common anode; SOT23; Ch: 2; ESD
Type of diode: TVS array
Mounting: SMD
Version: ESD
Semiconductor structure: common anode; double
Case: SOT23
Kind of package: reel; tape
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 30V
Peak pulse power dissipation: 0.3kW
на замовлення 1255 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.36 грн |
| 40+ | 10.49 грн |
| 49+ | 8.59 грн |
| 58+ | 7.27 грн |
| 100+ | 6.13 грн |
| 500+ | 4.13 грн |
| 1000+ | 3.78 грн |
| ESDA25W |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 30V; 9A; 400W; double,common anode; SOT323; Ch: 1
Type of diode: TVS array
Mounting: SMD
Version: ESD
Semiconductor structure: common anode; double
Case: SOT323
Kind of package: reel; tape
Leakage current: 1mA
Number of channels: 1
Max. forward impulse current: 9A
Max. off-state voltage: 25V
Breakdown voltage: 30V
Peak pulse power dissipation: 0.4kW
Category: Protection diodes - arrays
Description: Diode: TVS array; 30V; 9A; 400W; double,common anode; SOT323; Ch: 1
Type of diode: TVS array
Mounting: SMD
Version: ESD
Semiconductor structure: common anode; double
Case: SOT323
Kind of package: reel; tape
Leakage current: 1mA
Number of channels: 1
Max. forward impulse current: 9A
Max. off-state voltage: 25V
Breakdown voltage: 30V
Peak pulse power dissipation: 0.4kW
на замовлення 2975 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.50 грн |
| 27+ | 15.86 грн |
| 100+ | 10.20 грн |
| 500+ | 7.70 грн |
| 1000+ | 6.72 грн |
| ESDA18-1K |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 450W; 19V; 12A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Mounting: SMD
Version: ESD
Semiconductor structure: unidirectional
Case: SOD523
Kind of package: reel; tape
Leakage current: 1mA
Max. forward impulse current: 12A
Max. off-state voltage: 15V
Breakdown voltage: 19V
Peak pulse power dissipation: 450W
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 450W; 19V; 12A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Mounting: SMD
Version: ESD
Semiconductor structure: unidirectional
Case: SOD523
Kind of package: reel; tape
Leakage current: 1mA
Max. forward impulse current: 12A
Max. off-state voltage: 15V
Breakdown voltage: 19V
Peak pulse power dissipation: 450W
на замовлення 1591 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.46 грн |
| 43+ | 9.82 грн |
| 54+ | 7.89 грн |
| 100+ | 5.35 грн |
| 500+ | 3.49 грн |
| 1000+ | 2.96 грн |
| ESDALC6V1-5M6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 3A; 30W; common anode; MicroQFN; Ch: 5; ESD
Type of diode: TVS array
Mounting: SMD
Version: ESD
Semiconductor structure: common anode
Case: MicroQFN
Leakage current: 70nA
Number of channels: 5
Max. forward impulse current: 3A
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 3A; 30W; common anode; MicroQFN; Ch: 5; ESD
Type of diode: TVS array
Mounting: SMD
Version: ESD
Semiconductor structure: common anode
Case: MicroQFN
Leakage current: 70nA
Number of channels: 5
Max. forward impulse current: 3A
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
на замовлення 2977 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.83 грн |
| 25+ | 17.29 грн |
| 100+ | 12.51 грн |
| 250+ | 10.57 грн |
| 500+ | 9.40 грн |
| 1000+ | 8.31 грн |
| ESDALC6V1-5P6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 2.5A; 30W; unidirectional,common anode
Type of diode: TVS array
Breakdown voltage: 6.1V
Max. forward impulse current: 2.5A
Peak pulse power dissipation: 30W
Semiconductor structure: common anode; unidirectional
Mounting: SMD
Case: SOT666
Max. off-state voltage: 5V
Leakage current: 70nA
Number of channels: 5
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 2.5A; 30W; unidirectional,common anode
Type of diode: TVS array
Breakdown voltage: 6.1V
Max. forward impulse current: 2.5A
Peak pulse power dissipation: 30W
Semiconductor structure: common anode; unidirectional
Mounting: SMD
Case: SOT666
Max. off-state voltage: 5V
Leakage current: 70nA
Number of channels: 5
Kind of package: reel; tape
Version: ESD
на замовлення 2690 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.42 грн |
| ESDA5V3SC6Y |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.3V; 22A; 400W; quadruple,common anode; SOT23-6
Type of diode: TVS array
Breakdown voltage: 5.3V
Max. forward impulse current: 22A
Peak pulse power dissipation: 0.4kW
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 3V
Leakage current: 2µA
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.3V; 22A; 400W; quadruple,common anode; SOT23-6
Type of diode: TVS array
Breakdown voltage: 5.3V
Max. forward impulse current: 22A
Peak pulse power dissipation: 0.4kW
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 3V
Leakage current: 2µA
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
Version: ESD
на замовлення 2840 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.98 грн |
| 32+ | 13.26 грн |
| 36+ | 11.67 грн |
| 100+ | 8.64 грн |
| ESDA37W |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; ESD
Type of diode: TVS array
Mounting: SMD
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; ESD
Type of diode: TVS array
Mounting: SMD
Version: ESD
на замовлення 2818 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.85 грн |
| 55+ | 7.72 грн |
| 100+ | 5.76 грн |
| 250+ | 5.46 грн |
| 500+ | 5.03 грн |
| 1000+ | 4.35 грн |
| ESDALC6V1P6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 30W; SOT666IP; Ch: 4; ESD
Type of diode: TVS array
Mounting: SMD
Version: ESD
Semiconductor structure: common anode; quadruple; unidirectional
Case: SOT666IP
Leakage current: 0.1µA
Number of channels: 4
Max. off-state voltage: 3V
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 30W; SOT666IP; Ch: 4; ESD
Type of diode: TVS array
Mounting: SMD
Version: ESD
Semiconductor structure: common anode; quadruple; unidirectional
Case: SOT666IP
Leakage current: 0.1µA
Number of channels: 4
Max. off-state voltage: 3V
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
на замовлення 2655 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.69 грн |
| 28+ | 15.27 грн |
| 30+ | 14.35 грн |
| 75+ | 10.99 грн |
| 100+ | 10.49 грн |
| 500+ | 8.39 грн |
| 1000+ | 7.81 грн |
| ESDA6V1SC6Y |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 300W; common anode; SOT23-6; Ch: 4; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5.25V
Leakage current: 2µA
Number of channels: 4
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 300W; common anode; SOT23-6; Ch: 4; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5.25V
Leakage current: 2µA
Number of channels: 4
Kind of package: reel; tape
Version: ESD
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.17 грн |
| 38+ | 11.16 грн |
| 100+ | 8.39 грн |
| 250+ | 7.72 грн |
| 500+ | 7.22 грн |
| 1000+ | 6.80 грн |
| 3000+ | 6.21 грн |
| ESDA25-4BP6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 50W; bidirectional; ESD
Type of diode: TVS array
Mounting: SMD
Version: ESD
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. off-state voltage: 24V
Peak pulse power dissipation: 50W
Category: Protection diodes - arrays
Description: Diode: TVS array; 50W; bidirectional; ESD
Type of diode: TVS array
Mounting: SMD
Version: ESD
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. off-state voltage: 24V
Peak pulse power dissipation: 50W
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.98 грн |
| 31+ | 13.68 грн |
| 33+ | 12.84 грн |
| 100+ | 9.65 грн |
| 250+ | 8.64 грн |
| 500+ | 7.97 грн |
| 1000+ | 7.47 грн |
| 3000+ | 6.88 грн |
| ESDA5V3LY |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.9V; 300W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 5.9V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Leakage current: 2µA
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.9V; 300W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 5.9V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Leakage current: 2µA
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
на замовлення 2979 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.94 грн |
| 54+ | 7.89 грн |
| 58+ | 7.30 грн |
| 100+ | 5.43 грн |
| 250+ | 4.87 грн |
| 500+ | 4.46 грн |
| 1000+ | 4.27 грн |
| ESDA25SC6Y |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 30V; 9A; unidirectional; SOT23-6; reel,tape; Ch: 1
Type of diode: TVS
Mounting: SMD
Version: ESD
Semiconductor structure: unidirectional
Case: SOT23-6
Kind of package: reel; tape
Leakage current: 1mA
Number of channels: 1
Max. forward impulse current: 9A
Max. off-state voltage: 24V
Breakdown voltage: 30V
Peak pulse power dissipation: 0.4kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 30V; 9A; unidirectional; SOT23-6; reel,tape; Ch: 1
Type of diode: TVS
Mounting: SMD
Version: ESD
Semiconductor structure: unidirectional
Case: SOT23-6
Kind of package: reel; tape
Leakage current: 1mA
Number of channels: 1
Max. forward impulse current: 9A
Max. off-state voltage: 24V
Breakdown voltage: 30V
Peak pulse power dissipation: 0.4kW
на замовлення 2985 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.40 грн |
| 27+ | 15.69 грн |
| 50+ | 12.84 грн |
| 100+ | 11.67 грн |
| 250+ | 10.32 грн |
| 500+ | 10.16 грн |
| ESDA14V2BP6 | ![]() |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 14.2V; 50W; SOT666; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Mounting: SMD
Version: ESD
Semiconductor structure: bidirectional; common anode; quadruple
Case: SOT666
Kind of package: reel; tape
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 12V
Breakdown voltage: 14.2V
Peak pulse power dissipation: 50W
Category: Protection diodes - arrays
Description: Diode: TVS array; 14.2V; 50W; SOT666; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Mounting: SMD
Version: ESD
Semiconductor structure: bidirectional; common anode; quadruple
Case: SOT666
Kind of package: reel; tape
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 12V
Breakdown voltage: 14.2V
Peak pulse power dissipation: 50W
на замовлення 427 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.73 грн |
| 19+ | 22.83 грн |
| 22+ | 19.64 грн |
| 100+ | 10.99 грн |
| 250+ | 9.23 грн |
| ESDA25W5 | ![]() |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 25V; 15A; 150W; quadruple,common anode; Ch: 4
Type of diode: TVS array
Mounting: SMD
Version: ESD
Semiconductor structure: common anode; quadruple
Case: SOT323-5L
Kind of package: reel; tape
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 15A
Max. off-state voltage: 24V
Breakdown voltage: 25V
Peak pulse power dissipation: 0.15kW
Category: Protection diodes - arrays
Description: Diode: TVS array; 25V; 15A; 150W; quadruple,common anode; Ch: 4
Type of diode: TVS array
Mounting: SMD
Version: ESD
Semiconductor structure: common anode; quadruple
Case: SOT323-5L
Kind of package: reel; tape
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 15A
Max. off-state voltage: 24V
Breakdown voltage: 25V
Peak pulse power dissipation: 0.15kW
на замовлення 635 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 28.02 грн |
| 22+ | 19.22 грн |
| 100+ | 13.01 грн |
| 500+ | 9.57 грн |
| ESDA6V1-5P6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 150W; common anode; SOT666; Ch: 5; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 0.15kW
Semiconductor structure: common anode
Mounting: SMD
Case: SOT666
Max. off-state voltage: 3V
Leakage current: 0.5µA
Number of channels: 5
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 150W; common anode; SOT666; Ch: 5; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 0.15kW
Semiconductor structure: common anode
Mounting: SMD
Case: SOT666
Max. off-state voltage: 3V
Leakage current: 0.5µA
Number of channels: 5
Kind of package: reel; tape
Version: ESD
на замовлення 86 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.69 грн |
| 28+ | 15.11 грн |
| 34+ | 12.51 грн |
| 44+ | 9.74 грн |
| ESDA25SC6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; ESD
Type of diode: TVS array
Mounting: SMD
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; ESD
Type of diode: TVS array
Mounting: SMD
Version: ESD
на замовлення 2800 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.56 грн |
| 45+ | 9.40 грн |
| 100+ | 7.07 грн |
| 250+ | 6.39 грн |
| 500+ | 5.89 грн |
| 1000+ | 5.65 грн |








































