Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (131527) > Сторінка 2096 з 2193
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| 1.5KE400CARL | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 380V; 4A; bidirectional; DO201; 1.5kW; Ch: 1; -65÷175°C Type of diode: TVS Max. off-state voltage: 342V Breakdown voltage: 380V Max. forward impulse current: 4A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Operating temperature: -65...175°C Number of channels: 1 |
на замовлення 1900 шт: термін постачання 14-30 дні (днів) |
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1N5818 | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: Ammo Pack Max. load current: 10A |
на замовлення 2450 шт: термін постачання 14-30 дні (днів) |
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LD3985M28R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.1V Output voltage: 2.8V Output current: 0.15A Case: SOT23-5 Mounting: SMD Manufacturer series: LD3985 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 2...3% Number of channels: 1 Input voltage: 2.5...6V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BZW50-27RL | STMicroelectronics |
Category: Diodes - UnclassifiedDescription: BZW50-27RL |
на замовлення 2000 шт: термін постачання 14-30 дні (днів) |
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STW9NK90Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 5A Power dissipation: 160W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 176 шт: термін постачання 14-30 дні (днів) |
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STB6N60M2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 60W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.5A Power dissipation: 60W Case: D2PAK On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 8nC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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STD6N60DM2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 60W Case: DPAK; TO252 On-state resistance: 1.1Ω Mounting: SMD Gate charge: 6.2nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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STM32F427ZIT7 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG Supply voltage: 1.8...3.6V DC Operating temperature: -40...105°C Number of inputs/outputs: 114 Type of integrated circuit: STM32 ARM microcontroller Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Kind of architecture: Cortex M4 Clock frequency: 180MHz Kind of core: 32-bit Memory: 256kB SRAM; 2MB FLASH Number of 12bit D/A converters: 2 Kind of package: in-tray Number of 16bit timers: 14 Number of 12bit A/D converters: 24 Case: LQFP144 Family: STM32F4 Mounting: SMD |
на замовлення 23 шт: термін постачання 14-30 дні (днів) |
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SM6T36A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Case: SMB Max. forward impulse current: 12A Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 1µA Type of diode: TVS Tolerance: ±5% Breakdown voltage: 36V |
на замовлення 9488 шт: термін постачання 14-30 дні (днів) |
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Z0107MA 2AL2 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 5mA Mounting: THT Max. forward impulse current: 8A Kind of package: Ammo Pack |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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STPS5L40 | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V Type of diode: Schottky rectifying Case: DO201AD Mounting: THT Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. load current: 15A Leakage current: 75mA Max. forward impulse current: 150A Kind of package: Ammo Pack |
на замовлення 1946 шт: термін постачання 14-30 дні (днів) |
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Z0405MH | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: IPAK Gate current: 5mA Max. forward impulse current: 16A Mounting: THT Kind of package: tube |
на замовлення 270 шт: термін постачання 14-30 дні (днів) |
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SM15T30A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 36A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1403 шт: термін постачання 14-30 дні (днів) |
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SM15T30CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 36A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 3044 шт: термін постачання 14-30 дні (днів) |
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| VNS3NV04PTR-E | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; SOIC8 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOIC8 On-state resistance: 0.12Ω Active logical level: low Operating temperature: -40...150°C Integrated circuit features: thermal protection |
на замовлення 7500 шт: термін постачання 14-30 дні (днів) |
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SMCJ33CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 38.6V Max. forward impulse current: 29A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
на замовлення 2548 шт: термін постачання 14-30 дні (днів) |
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STL120N10F8 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 125A Pulsed drain current: 500A Power dissipation: 150W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 56nC |
на замовлення 2990 шт: термін постачання 14-30 дні (днів) |
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| VL53L3CXV0DH/1 | STMicroelectronics |
Category: UnclassifiedDescription: VL53L3CXV0DH/1 |
на замовлення 4500 шт: термін постачання 14-30 дні (днів) |
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STF20N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 30W Case: TO220FP On-state resistance: 0.19Ω Mounting: THT Kind of channel: enhancement |
на замовлення 301 шт: термін постачання 14-30 дні (днів) |
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MJD45H11T4 | STMicroelectronics |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 40 Mounting: SMD Kind of package: reel; tape |
на замовлення 527 шт: термін постачання 14-30 дні (днів) |
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STP110N10F7 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 76A Pulsed drain current: 415A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement Technology: STripFET™ F7 |
на замовлення 80 шт: термін постачання 14-30 дні (днів) |
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BTB04-600SL | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 10mA; lighting application Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 10mA Mounting: THT Kind of package: tube Features of semiconductor devices: lighting application |
на замовлення 376 шт: термін постачання 14-30 дні (днів) |
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STP16N65M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.9A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 44A Gate charge: 19.5nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STD16N65M2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 110W Case: DPAK; TO252 On-state resistance: 0.32Ω Mounting: SMD Gate charge: 19.5nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| STH315N10F7-2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 180A; 315W; H2PAK-2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 315W Case: H2PAK-2 On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 180nC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
| STH315N10F7-6 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W Type of transistor: N-MOSFET Technology: STripFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 315W Case: TO263-7 On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 180nC Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
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STP200N3LL | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W On-state resistance: 2.4mΩ Mounting: THT Pulsed drain current: 480A Power dissipation: 176.5W Gate charge: 53nC Polarisation: unipolar Drain current: 120A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220-3 |
на замовлення 153 шт: термін постачання 14-30 дні (днів) |
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LM833DT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV Type of integrated circuit: operational amplifier Bandwidth: 15MHz Number of channels: 2 Mounting: SMT Voltage supply range: 5...30V DC Case: SO8 Operating temperature: -40...105°C Slew rate: 7V/μs Input offset voltage: 0.3mV Kind of package: reel; tape Integrated circuit features: low noise |
на замовлення 1817 шт: термін постачання 14-30 дні (днів) |
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MC1458IDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8 Mounting: SMT Input offset voltage: 6mV Slew rate: 0.8V/μs Type of integrated circuit: operational amplifier Operating temperature: -40...105°C Input bias current: 0.8µA Voltage supply range: ± 2.5...15V DC; 5...30V DC Quiescent current: 2.3mA Kind of package: reel; tape Input offset current: 300nA Case: SO8 Number of channels: 2 Bandwidth: 1MHz |
на замовлення 270 шт: термін постачання 14-30 дні (днів) |
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MC1458DT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8 Mounting: SMT Input offset voltage: 6mV Slew rate: 0.8V/μs Type of integrated circuit: operational amplifier Operating temperature: 0...70°C Input bias current: 0.8µA Voltage supply range: ± 2.5...15V DC; 5...30V DC Quiescent current: 2.3mA Kind of package: reel; tape Input offset current: 300nA Case: SO8 Number of channels: 2 Bandwidth: 1MHz |
на замовлення 5467 шт: термін постачання 14-30 дні (днів) |
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LD39150PT-R | STMicroelectronics |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.4V Output voltage: 1.22...5V Output current: 1.5A Case: PPAK Mounting: SMD Manufacturer series: LD39150 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 1.5...3% Number of channels: 1 Input voltage: 2.5...6V |
на замовлення 2444 шт: термін постачання 14-30 дні (днів) |
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| LD39150PU-R | STMicroelectronics |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6 Operating temperature: -40...125°C Case: DFN6 Mounting: SMD Type of integrated circuit: voltage regulator Voltage drop: 0.4V Number of channels: 1 Output voltage: 1.22...5V Output current: 1.5A Tolerance: 1.5...3% Input voltage: 2.5...6V Manufacturer series: LD39150 Kind of voltage regulator: adjustable; LDO; linear Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STF4N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement |
на замовлення 62 шт: термін постачання 14-30 дні (днів) |
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STP4N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 12A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STL4N80K5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 38W Case: PowerFLAT 5x6 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STD4N80K5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.7A Pulsed drain current: 12A Power dissipation: 60W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| STU4N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Power dissipation: 60W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 12A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STP14N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.4A Pulsed drain current: 48A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 445mΩ Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STM32L052K8U6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 32MHz Mounting: SMD Number of inputs/outputs: 27 Case: UFQFPN32 Supply voltage: 1.8...3.6V DC Interface: I2C; SPI x3; USART x2; USB Kind of architecture: Cortex M0+ Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH Operating temperature: -40...85°C Family: STM32L0 Kind of core: 32-bit Kind of package: in-tray Number of 16bit timers: 5 Number of 12bit A/D converters: 10 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog Number of 12bit D/A converters: 1 |
на замовлення 125 шт: термін постачання 14-30 дні (днів) |
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| STM8S207K8T6C | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 24MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3 Type of integrated circuit: STM8 microcontroller Clock frequency: 24MHz Interface: I2C; IrDA; SPI; UART Supply voltage: 3...5.5V DC Case: LQFP32 Mounting: SMD Number of 16bit timers: 3 Number of PWM channels: 4 Memory: 1kB EEPROM; 6kB RAM; 64kB FLASH Integrated circuit features: Beeper; IWDG; WWDG Number of 10bit A/D converters: 7 Kind of core: 8-bit Number of 8bit timers: 1 Family: STM8S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ACS120-7SB-TR | STMicroelectronics |
Category: Thyristors - othersDescription: Thyristor: AC switch; 700V; Ifmax: 2A; Igt: 10mA; DPAK; SMD; ASD™ Type of thyristor: AC switch Max. load current: 2A Case: DPAK Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 700V Number of switches: 1 Gate current: 10mA Technology: ASD™ Features of semiconductor devices: internally triggered |
на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
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M24C08-RMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: I2C Memory organisation: 1kx8bit Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Clock frequency: 400kHz Memory: 8kb EEPROM |
на замовлення 2470 шт: термін постачання 14-30 дні (днів) |
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M24C08-RDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: I2C Memory organisation: 1kx8bit Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Clock frequency: 400kHz Memory: 8kb EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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M24C08-FMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: I2C Memory organisation: 1kx8bit Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C Operating voltage: 1.7...5.5V Clock frequency: 400kHz Memory: 8kb EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| M24C08-RMC6TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: I2C Memory organisation: 1kx8bit Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Clock frequency: 400kHz Memory: 8kb EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| M24C08-FDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: I2C Memory organisation: 1kx8bit Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Operating voltage: 1.7...5.5V Clock frequency: 400kHz Memory: 8kb EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| M24C08-FMC6TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: I2C Memory organisation: 1kx8bit Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -40...85°C Operating voltage: 1.7...5.5V Clock frequency: 400kHz Memory: 8kb EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STPS30L60CT | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.75V Max. load current: 30A Max. forward impulse current: 230A Leakage current: 130mA Kind of package: tube Heatsink thickness: 1.23...1.32mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA10-600CRG | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 10A; TO220ABIns; Igt: 25mA Mounting: THT Max. off-state voltage: 0.6kV Max. load current: 10A Kind of package: tube Case: TO220ABIns Type of thyristor: triac Gate current: 25mA |
на замовлення 137 шт: термін постачання 14-30 дні (днів) |
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BTA10-800BWRG | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 10A; TO220ABIns; Igt: 50mA; Snubberless™ Mounting: THT Max. off-state voltage: 0.8kV Max. load current: 10A Kind of package: tube Case: TO220ABIns Type of thyristor: triac Gate current: 50mA Technology: Snubberless™ |
на замовлення 240 шт: термін постачання 14-30 дні (днів) |
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1.5KE56A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 56V; 19.5A; unidirectional; DO201; Ammo Pack Type of diode: TVS Max. off-state voltage: 47.8V Breakdown voltage: 56V Max. forward impulse current: 19.5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack |
на замовлення 714 шт: термін постачання 14-30 дні (днів) |
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T1635H-6T | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 168A; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 35mA Max. forward impulse current: 0.168kA Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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STB18N60M2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; 110W; D2PAK,TO263 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 110W Case: D2PAK; TO263 On-state resistance: 255mΩ Mounting: SMD Gate charge: 21.5nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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X-NUCLEO-IHM14A1 | STMicroelectronics |
Category: Add-on boardsDescription: Expansion board; Comp: STSPIN820; 7÷45VDC Type of accessories for development kits: expansion board Components: STSPIN820 Associated circuits: STM32 Interface: GPIO Connection: pin strips; screw terminal development kits accessories features: stepper motor driver Supply voltage: 7...45V DC |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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STGW80H65DFB | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 80A; 470W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 470W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 414nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 119 шт: термін постачання 14-30 дні (днів) |
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STP20N90K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 13A; Idm: 80A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 13A Pulsed drain current: 80A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ K5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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L9613B013TR | STMicroelectronics |
Category: Interfaces others - integrated circuitsDescription: IC: interface; transceiver; 4.8÷18VDC; Bus; SMD; SO8; reel,tape Operating temperature: -40...150°C Mounting: SMD Supply voltage: 4.8...18V DC Type of integrated circuit: interface ISO standard: ISO 9141 Kind of package: reel; tape Case: SO8 Interface: Bus Kind of integrated circuit: transceiver |
на замовлення 1344 шт: термін постачання 14-30 дні (днів) |
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L9613B | STMicroelectronics |
Category: Interfaces others - integrated circuitsDescription: IC: interface; transceiver; 4.8÷18VDC; Bus; SMD; SO8; tube Operating temperature: -40...150°C Supply voltage: 4.8...18V DC Type of integrated circuit: interface ISO standard: ISO 9141 Kind of package: tube Case: SO8 Interface: Bus Kind of integrated circuit: transceiver Mounting: SMD |
на замовлення 498 шт: термін постачання 14-30 дні (днів) |
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1.5KE36CA | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 36V; 30A; bidirectional; DO201; 1.5kW; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 30A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Kind of package: Ammo Pack Leakage current: 1µA |
на замовлення 1280 шт: термін постачання 14-30 дні (днів) |
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STM32L051C8T6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 32MHz; LQFP48; 1.65÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 32MHz Mounting: SMD Number of inputs/outputs: 37 Case: LQFP48 Supply voltage: 1.65...3.6V DC Interface: I2C x2; I2S; SPI x4; USART x2 Kind of architecture: Cortex M0+ Memory: 8kB SRAM; 64kB FLASH Operating temperature: -40...85°C Family: STM32L0 Kind of core: 32-bit |
на замовлення 153 шт: термін постачання 14-30 дні (днів) |
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| 1.5KE400CARL |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 380V; 4A; bidirectional; DO201; 1.5kW; Ch: 1; -65÷175°C
Type of diode: TVS
Max. off-state voltage: 342V
Breakdown voltage: 380V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Operating temperature: -65...175°C
Number of channels: 1
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 380V; 4A; bidirectional; DO201; 1.5kW; Ch: 1; -65÷175°C
Type of diode: TVS
Max. off-state voltage: 342V
Breakdown voltage: 380V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Operating temperature: -65...175°C
Number of channels: 1
на замовлення 1900 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1900+ | 30.08 грн |
| 1N5818 |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
на замовлення 2450 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 19.14 грн |
| 41+ | 10.41 грн |
| 47+ | 9.14 грн |
| 100+ | 7.79 грн |
| 250+ | 6.60 грн |
| 500+ | 5.93 грн |
| 650+ | 5.67 грн |
| 1000+ | 5.33 грн |
| 2000+ | 4.83 грн |
| LD3985M28R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD3985
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2.5...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD3985
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2.5...6V
товару немає в наявності
В кошику
од. на суму грн.
| BZW50-27RL |
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на замовлення 2000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 74.75 грн |
| STW9NK90Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 176 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 280.78 грн |
| 10+ | 179.46 грн |
| 20+ | 172.69 грн |
| 30+ | 169.30 грн |
| 90+ | 150.68 грн |
| 120+ | 144.75 грн |
| 150+ | 140.52 грн |
| STB6N60M2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 60W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 60W
Case: D2PAK
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 60W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 60W
Case: D2PAK
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 8nC
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STD6N60DM2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 60W
Case: DPAK; TO252
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 60W
Case: DPAK; TO252
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STM32F427ZIT7 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC
Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Supply voltage: 1.8...3.6V DC
Operating temperature: -40...105°C
Number of inputs/outputs: 114
Type of integrated circuit: STM32 ARM microcontroller
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M4
Clock frequency: 180MHz
Kind of core: 32-bit
Memory: 256kB SRAM; 2MB FLASH
Number of 12bit D/A converters: 2
Kind of package: in-tray
Number of 16bit timers: 14
Number of 12bit A/D converters: 24
Case: LQFP144
Family: STM32F4
Mounting: SMD
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC
Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Supply voltage: 1.8...3.6V DC
Operating temperature: -40...105°C
Number of inputs/outputs: 114
Type of integrated circuit: STM32 ARM microcontroller
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M4
Clock frequency: 180MHz
Kind of core: 32-bit
Memory: 256kB SRAM; 2MB FLASH
Number of 12bit D/A converters: 2
Kind of package: in-tray
Number of 16bit timers: 14
Number of 12bit A/D converters: 24
Case: LQFP144
Family: STM32F4
Mounting: SMD
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1114.01 грн |
| 10+ | 865.13 грн |
| SM6T36A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Case: SMB
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 36V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Case: SMB
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 36V
на замовлення 9488 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.50 грн |
| 38+ | 11.17 грн |
| 44+ | 9.82 грн |
| 55+ | 7.70 грн |
| 100+ | 7.28 грн |
| 500+ | 6.94 грн |
| 1000+ | 6.43 грн |
| 2500+ | 6.01 грн |
| 5000+ | 5.76 грн |
| Z0107MA 2AL2 |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Mounting: THT
Max. forward impulse current: 8A
Kind of package: Ammo Pack
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Mounting: THT
Max. forward impulse current: 8A
Kind of package: Ammo Pack
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| STPS5L40 |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. load current: 15A
Leakage current: 75mA
Max. forward impulse current: 150A
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. load current: 15A
Leakage current: 75mA
Max. forward impulse current: 150A
Kind of package: Ammo Pack
на замовлення 1946 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.76 грн |
| 44+ | 9.73 грн |
| 100+ | 7.36 грн |
| Z0405MH |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 5mA
Max. forward impulse current: 16A
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 5mA
Max. forward impulse current: 16A
Mounting: THT
Kind of package: tube
на замовлення 270 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.82 грн |
| 19+ | 22.52 грн |
| 24+ | 18.03 грн |
| 75+ | 14.31 грн |
| SM15T30A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1403 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 81.13 грн |
| 9+ | 52.65 грн |
| 10+ | 45.29 грн |
| 50+ | 33.95 грн |
| 100+ | 30.98 грн |
| 500+ | 26.83 грн |
| 1000+ | 24.97 грн |
| SM15T30CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 3044 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.91 грн |
| 16+ | 26.67 грн |
| 100+ | 24.72 грн |
| 2500+ | 22.09 грн |
| VNS3NV04PTR-E |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; SOIC8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOIC8
On-state resistance: 0.12Ω
Active logical level: low
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; SOIC8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOIC8
On-state resistance: 0.12Ω
Active logical level: low
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
на замовлення 7500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 60.17 грн |
| SMCJ33CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
на замовлення 2548 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.26 грн |
| 11+ | 41.39 грн |
| 50+ | 30.47 грн |
| 100+ | 27.17 грн |
| 500+ | 22.09 грн |
| 1000+ | 19.81 грн |
| 2500+ | 17.52 грн |
| STL120N10F8 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 56nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 56nC
на замовлення 2990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 156.60 грн |
| 10+ | 118.51 грн |
| 15+ | 108.35 грн |
| 75+ | 101.58 грн |
| VL53L3CXV0DH/1 |
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на замовлення 4500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4500+ | 206.94 грн |
| STF20N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
на замовлення 301 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 227.91 грн |
| 10+ | 132.90 грн |
| 50+ | 125.28 грн |
| 100+ | 121.05 грн |
| MJD45H11T4 |
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Виробник: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
на замовлення 527 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 83.87 грн |
| 10+ | 49.18 грн |
| 100+ | 32.42 грн |
| 500+ | 25.14 грн |
| STP110N10F7 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 415A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ F7
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 415A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ F7
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 224.26 грн |
| 25+ | 137.98 грн |
| 50+ | 115.13 грн |
| BTB04-600SL |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; lighting application
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: lighting application
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; lighting application
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: lighting application
на замовлення 376 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.99 грн |
| 8+ | 60.44 грн |
| 10+ | 52.23 грн |
| 50+ | 38.43 грн |
| 100+ | 34.28 грн |
| STP16N65M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate charge: 19.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate charge: 19.5nC
товару немає в наявності
В кошику
од. на суму грн.
| STD16N65M2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STH315N10F7-2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 315W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: H2PAK-2
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 315W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: H2PAK-2
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STH315N10F7-6 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: TO263-7
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: TO263-7
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STP200N3LL |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
On-state resistance: 2.4mΩ
Mounting: THT
Pulsed drain current: 480A
Power dissipation: 176.5W
Gate charge: 53nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
On-state resistance: 2.4mΩ
Mounting: THT
Pulsed drain current: 480A
Power dissipation: 176.5W
Gate charge: 53nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
на замовлення 153 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 122.16 грн |
| 10+ | 84.14 грн |
| 50+ | 72.29 грн |
| 100+ | 66.28 грн |
| LM833DT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 5...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 5...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
на замовлення 1817 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 28.26 грн |
| 20+ | 21.50 грн |
| 23+ | 18.54 грн |
| 28+ | 15.49 грн |
| 50+ | 14.73 грн |
| MC1458IDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Mounting: SMT
Input offset voltage: 6mV
Slew rate: 0.8V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...105°C
Input bias current: 0.8µA
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Quiescent current: 2.3mA
Kind of package: reel; tape
Input offset current: 300nA
Case: SO8
Number of channels: 2
Bandwidth: 1MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Mounting: SMT
Input offset voltage: 6mV
Slew rate: 0.8V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...105°C
Input bias current: 0.8µA
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Quiescent current: 2.3mA
Kind of package: reel; tape
Input offset current: 300nA
Case: SO8
Number of channels: 2
Bandwidth: 1MHz
на замовлення 270 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.82 грн |
| 17+ | 25.56 грн |
| 19+ | 23.03 грн |
| 25+ | 20.15 грн |
| 100+ | 17.52 грн |
| 250+ | 16.17 грн |
| MC1458DT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Mounting: SMT
Input offset voltage: 6mV
Slew rate: 0.8V/μs
Type of integrated circuit: operational amplifier
Operating temperature: 0...70°C
Input bias current: 0.8µA
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Quiescent current: 2.3mA
Kind of package: reel; tape
Input offset current: 300nA
Case: SO8
Number of channels: 2
Bandwidth: 1MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Mounting: SMT
Input offset voltage: 6mV
Slew rate: 0.8V/μs
Type of integrated circuit: operational amplifier
Operating temperature: 0...70°C
Input bias current: 0.8µA
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Quiescent current: 2.3mA
Kind of package: reel; tape
Input offset current: 300nA
Case: SO8
Number of channels: 2
Bandwidth: 1MHz
на замовлення 5467 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 41.93 грн |
| 14+ | 31.83 грн |
| 15+ | 28.36 грн |
| 25+ | 24.38 грн |
| 100+ | 20.40 грн |
| 200+ | 19.22 грн |
| 250+ | 18.79 грн |
| 500+ | 18.03 грн |
| 2500+ | 16.93 грн |
| LD39150PT-R |
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Виробник: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.22...5V
Output current: 1.5A
Case: PPAK
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.22...5V
Output current: 1.5A
Case: PPAK
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
на замовлення 2444 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 85.69 грн |
| 10+ | 57.48 грн |
| 25+ | 52.23 грн |
| 100+ | 46.22 грн |
| 250+ | 43.76 грн |
| 500+ | 42.16 грн |
| 1000+ | 41.65 грн |
| LD39150PU-R |
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Виробник: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6
Operating temperature: -40...125°C
Case: DFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Number of channels: 1
Output voltage: 1.22...5V
Output current: 1.5A
Tolerance: 1.5...3%
Input voltage: 2.5...6V
Manufacturer series: LD39150
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6
Operating temperature: -40...125°C
Case: DFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Number of channels: 1
Output voltage: 1.22...5V
Output current: 1.5A
Tolerance: 1.5...3%
Input voltage: 2.5...6V
Manufacturer series: LD39150
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| STF4N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 62 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 122.16 грн |
| 10+ | 62.64 грн |
| 50+ | 54.18 грн |
| STP4N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
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| STL4N80K5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 38W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 38W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STD4N80K5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Pulsed drain current: 12A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Pulsed drain current: 12A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| STU4N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
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| STP14N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.4A
Pulsed drain current: 48A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 445mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.4A
Pulsed drain current: 48A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 445mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
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| STM32L052K8U6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x3; USART x2; USB
Kind of architecture: Cortex M0+
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
Kind of package: in-tray
Number of 16bit timers: 5
Number of 12bit A/D converters: 10
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Number of 12bit D/A converters: 1
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x3; USART x2; USB
Kind of architecture: Cortex M0+
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
Kind of package: in-tray
Number of 16bit timers: 5
Number of 12bit A/D converters: 10
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Number of 12bit D/A converters: 1
на замовлення 125 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 155.76 грн |
| 10+ | 127.82 грн |
| 25+ | 122.74 грн |
| STM8S207K8T6C |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 24MHz
Interface: I2C; IrDA; SPI; UART
Supply voltage: 3...5.5V DC
Case: LQFP32
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 4
Memory: 1kB EEPROM; 6kB RAM; 64kB FLASH
Integrated circuit features: Beeper; IWDG; WWDG
Number of 10bit A/D converters: 7
Kind of core: 8-bit
Number of 8bit timers: 1
Family: STM8S
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 24MHz
Interface: I2C; IrDA; SPI; UART
Supply voltage: 3...5.5V DC
Case: LQFP32
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 4
Memory: 1kB EEPROM; 6kB RAM; 64kB FLASH
Integrated circuit features: Beeper; IWDG; WWDG
Number of 10bit A/D converters: 7
Kind of core: 8-bit
Number of 8bit timers: 1
Family: STM8S
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| ACS120-7SB-TR |
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Виробник: STMicroelectronics
Category: Thyristors - others
Description: Thyristor: AC switch; 700V; Ifmax: 2A; Igt: 10mA; DPAK; SMD; ASD™
Type of thyristor: AC switch
Max. load current: 2A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 700V
Number of switches: 1
Gate current: 10mA
Technology: ASD™
Features of semiconductor devices: internally triggered
Category: Thyristors - others
Description: Thyristor: AC switch; 700V; Ifmax: 2A; Igt: 10mA; DPAK; SMD; ASD™
Type of thyristor: AC switch
Max. load current: 2A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 700V
Number of switches: 1
Gate current: 10mA
Technology: ASD™
Features of semiconductor devices: internally triggered
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 113.95 грн |
| 10+ | 64.76 грн |
| 100+ | 44.61 грн |
| 500+ | 40.29 грн |
| M24C08-RMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Memory: 8kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Memory: 8kb EEPROM
на замовлення 2470 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.67 грн |
| 36+ | 12.02 грн |
| M24C08-RDW6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Memory: 8kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Memory: 8kb EEPROM
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| M24C08-FMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Memory: 8kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Memory: 8kb EEPROM
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| M24C08-RMC6TG |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Memory: 8kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Memory: 8kb EEPROM
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| M24C08-FDW6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Memory: 8kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Memory: 8kb EEPROM
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| M24C08-FMC6TG |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Memory: 8kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Memory: 8kb EEPROM
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| STPS30L60CT |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Max. load current: 30A
Max. forward impulse current: 230A
Leakage current: 130mA
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Max. load current: 30A
Max. forward impulse current: 230A
Leakage current: 130mA
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
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| BTA10-600CRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 10A; TO220ABIns; Igt: 25mA
Mounting: THT
Max. off-state voltage: 0.6kV
Max. load current: 10A
Kind of package: tube
Case: TO220ABIns
Type of thyristor: triac
Gate current: 25mA
Category: Triacs
Description: Triac; 600V; 10A; TO220ABIns; Igt: 25mA
Mounting: THT
Max. off-state voltage: 0.6kV
Max. load current: 10A
Kind of package: tube
Case: TO220ABIns
Type of thyristor: triac
Gate current: 25mA
на замовлення 137 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 113.95 грн |
| 10+ | 56.80 грн |
| 50+ | 47.57 грн |
| 100+ | 44.02 грн |
| BTA10-800BWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 10A; TO220ABIns; Igt: 50mA; Snubberless™
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 10A
Kind of package: tube
Case: TO220ABIns
Type of thyristor: triac
Gate current: 50mA
Technology: Snubberless™
Category: Triacs
Description: Triac; 800V; 10A; TO220ABIns; Igt: 50mA; Snubberless™
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 10A
Kind of package: tube
Case: TO220ABIns
Type of thyristor: triac
Gate current: 50mA
Technology: Snubberless™
на замовлення 240 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 110.31 грн |
| 10+ | 53.67 грн |
| 50+ | 44.61 грн |
| 100+ | 41.39 грн |
| 1.5KE56A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 56V; 19.5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 19.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 56V; 19.5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 19.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
на замовлення 714 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 45.58 грн |
| 30+ | 37.84 грн |
| 100+ | 32.84 грн |
| 250+ | 28.10 грн |
| 300+ | 27.17 грн |
| 500+ | 24.72 грн |
| 600+ | 24.21 грн |
| T1635H-6T |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 0.168kA
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 0.168kA
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
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Мінімальне замовлення: 1000 шт
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| STB18N60M2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 110W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 110W
Case: D2PAK; TO263
On-state resistance: 255mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 110W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 110W
Case: D2PAK; TO263
On-state resistance: 255mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
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Мінімальне замовлення: 1000 шт
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| X-NUCLEO-IHM14A1 |
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Виробник: STMicroelectronics
Category: Add-on boards
Description: Expansion board; Comp: STSPIN820; 7÷45VDC
Type of accessories for development kits: expansion board
Components: STSPIN820
Associated circuits: STM32
Interface: GPIO
Connection: pin strips; screw terminal
development kits accessories features: stepper motor driver
Supply voltage: 7...45V DC
Category: Add-on boards
Description: Expansion board; Comp: STSPIN820; 7÷45VDC
Type of accessories for development kits: expansion board
Components: STSPIN820
Associated circuits: STM32
Interface: GPIO
Connection: pin strips; screw terminal
development kits accessories features: stepper motor driver
Supply voltage: 7...45V DC
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1640.93 грн |
| STGW80H65DFB |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 119 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 330.92 грн |
| 5+ | 281.04 грн |
| 10+ | 264.11 грн |
| 30+ | 228.56 грн |
| STP20N90K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 13A; Idm: 80A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ K5
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 13A; Idm: 80A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ K5
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В кошику
од. на суму грн.
| L9613B013TR |
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Виробник: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.8÷18VDC; Bus; SMD; SO8; reel,tape
Operating temperature: -40...150°C
Mounting: SMD
Supply voltage: 4.8...18V DC
Type of integrated circuit: interface
ISO standard: ISO 9141
Kind of package: reel; tape
Case: SO8
Interface: Bus
Kind of integrated circuit: transceiver
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.8÷18VDC; Bus; SMD; SO8; reel,tape
Operating temperature: -40...150°C
Mounting: SMD
Supply voltage: 4.8...18V DC
Type of integrated circuit: interface
ISO standard: ISO 9141
Kind of package: reel; tape
Case: SO8
Interface: Bus
Kind of integrated circuit: transceiver
на замовлення 1344 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 128.54 грн |
| 10+ | 88.04 грн |
| 25+ | 84.65 грн |
| L9613B |
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Виробник: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.8÷18VDC; Bus; SMD; SO8; tube
Operating temperature: -40...150°C
Supply voltage: 4.8...18V DC
Type of integrated circuit: interface
ISO standard: ISO 9141
Kind of package: tube
Case: SO8
Interface: Bus
Kind of integrated circuit: transceiver
Mounting: SMD
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.8÷18VDC; Bus; SMD; SO8; tube
Operating temperature: -40...150°C
Supply voltage: 4.8...18V DC
Type of integrated circuit: interface
ISO standard: ISO 9141
Kind of package: tube
Case: SO8
Interface: Bus
Kind of integrated circuit: transceiver
Mounting: SMD
на замовлення 498 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 207.85 грн |
| 10+ | 129.52 грн |
| 25+ | 117.67 грн |
| 50+ | 109.20 грн |
| 100+ | 100.73 грн |
| 1.5KE36CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 30A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Kind of package: Ammo Pack
Leakage current: 1µA
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 30A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Kind of package: Ammo Pack
Leakage current: 1µA
на замовлення 1280 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.76 грн |
| 14+ | 31.91 грн |
| 25+ | 29.37 грн |
| 100+ | 25.65 грн |
| 600+ | 20.99 грн |
| 1200+ | 19.39 грн |
| STM32L051C8T6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP48; 1.65÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 37
Case: LQFP48
Supply voltage: 1.65...3.6V DC
Interface: I2C x2; I2S; SPI x4; USART x2
Kind of architecture: Cortex M0+
Memory: 8kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP48; 1.65÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 37
Case: LQFP48
Supply voltage: 1.65...3.6V DC
Interface: I2C x2; I2S; SPI x4; USART x2
Kind of architecture: Cortex M0+
Memory: 8kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
на замовлення 153 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 187.80 грн |
| 5+ | 166.76 грн |
| 25+ | 158.30 грн |

































