Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (132768) > Сторінка 2213 з 2213
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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STM32L443RCT6TR | STMicroelectronics |
 Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 80MHz; LQFP64; 1.71÷3.6VDC; Cmp: 2 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 80MHz Mounting: SMD Number of inputs/outputs: 52 Case: LQFP64 Supply voltage: 1.71...3.6V DC Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; SWPMI; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 64kB SRAM; 256kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of comparators: 2 Number of 12bit D/A converters: 2 Family: STM32L4 Kind of core: 32-bit |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
| STGWT60H65FB | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 375W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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Z0107DA 2AL2 | STMicroelectronics |
Category: Triacs Description: 400V; 800mA; Igt: 5mA; TO92 Max. off-state voltage: 0.4kV Max. load current: 0.8A Gate current: 5mA Case: TO92 Mounting: THT |
на замовлення 12000 шт: термін постачання 14-30 дні (днів) |
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Z0107MUF | STMicroelectronics |
Category: Triacs Description: 600V; 1A; Igt: 5mA; SMB Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 5mA Case: SMB Mounting: SMD |
на замовлення 10000 шт: термін постачання 14-30 дні (днів) |
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| STTH2R06UFY | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 2A; 85ns; SMB flat; Ufmax: 1.9V; Ir: 2uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Reverse recovery time: 85ns Semiconductor structure: single diode Case: SMB flat Max. forward voltage: 1.9V Max. forward impulse current: 28A Leakage current: 2µA |
на замовлення 15000 шт: термін постачання 14-30 дні (днів) |
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SM15T36AY | STMicroelectronics |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 34.2V; unidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2V Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Operating temperature: -40...150°C Number of channels: 1 |
на замовлення 5000 шт: термін постачання 14-30 дні (днів) |
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TIP142T | STMicroelectronics |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 10A; 125W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 10A Power dissipation: 125W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 950 шт: термін постачання 14-30 дні (днів) |
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| STM32G491RCI3 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 170MHz; UFBGA64; -40÷125°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 52 Case: UFBGA64 Interface: I2C; IrDA; QSPI; SAI; UART; USART; USB Kind of architecture: Cortex M4 Operating temperature: -40...125°C Kind of core: 32-bit |
на замовлення 1960 шт: термін постачання 14-30 дні (днів) |
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STM32G474VBT3 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 86 Case: LQFP100 Supply voltage: 1.71...3.6V DC Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C Kind of architecture: Cortex M4F Memory: 128kB FLASH; 128kB SRAM Operating temperature: -40...125°C Number of 12bit A/D converters: 5 Number of comparators: 7 Number of 12bit D/A converters: 7 Number of 16bit timers: 11 Number of 32bit timers: 2 Family: STM32G4 Kind of core: 32-bit |
товару немає в наявності |
Мінімальне замовлення: 90 шт В кошику од. на суму грн. | ||||||||||||||||
| LM2902YQ5T | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.3MHz; Ch: 4; 3÷30VDC; QFN16; 2mV Type of integrated circuit: operational amplifier Bandwidth: 1.3MHz Number of channels: 4 Mounting: SMT Voltage supply range: 3...30V DC Case: QFN16 Operating temperature: -40...125°C Slew rate: 0.4V/μs Integrated circuit features: low power Input offset voltage: 2mV Input bias current: 20nA Input offset current: 2nA |
на замовлення 15000 шт: термін постачання 14-30 дні (днів) |
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ESDCAN06-2BLY | STMicroelectronics |
Category: Protection diodes - arrays Description: Diode: TVS array; 38V; 3A; 230W; bidirectional,double; ESD; SOT23-3 Type of diode: TVS array Breakdown voltage: 38V Max. forward impulse current: 3A Peak pulse power dissipation: 0.23kW Semiconductor structure: bidirectional; double Version: ESD Mounting: SMD Case: SOT23-3 Max. off-state voltage: 35V Leakage current: 0.1µA Number of channels: 2 Application: automotive industry; CAN Kind of package: reel; tape |
на замовлення 19216 шт: термін постачання 14-30 дні (днів) |
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ESDCAN24-2BLY | STMicroelectronics |
Category: Protection diodes - arrays Description: Diode: TVS array; 27V; 5.5A; 230W; bidirectional,double; ESD; Ch: 2 Type of diode: TVS array Breakdown voltage: 27V Max. forward impulse current: 5.5A Peak pulse power dissipation: 0.23kW Semiconductor structure: bidirectional; double Version: ESD Mounting: SMD Case: SOT23-3 Max. off-state voltage: 24V Leakage current: 0.1µA Number of channels: 2 Application: automotive industry; CAN Kind of package: reel; tape |
на замовлення 12890 шт: термін постачання 14-30 дні (днів) |
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ESDCAN05-2BWY | STMicroelectronics |
Category: Protection diodes - arrays Description: Diode: TVS array; 39V; 3A; 170W; bidirectional,double; ESD; Ch: 2 Type of diode: TVS array Breakdown voltage: 39V Max. forward impulse current: 3A Peak pulse power dissipation: 0.17kW Semiconductor structure: bidirectional; double Version: ESD Mounting: SMD Case: SOT323-3L Max. off-state voltage: 36V Leakage current: 0.1µA Number of channels: 2 Application: automotive industry; CAN Kind of package: reel; tape |
на замовлення 1373 шт: термін постачання 14-30 дні (днів) |
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ESDCAN06-2BWY | STMicroelectronics |
Category: Protection diodes - arrays Description: Diode: TVS array; 38V; 3A; 170W; bidirectional,double; ESD; Ch: 2 Type of diode: TVS array Breakdown voltage: 38V Max. forward impulse current: 3A Peak pulse power dissipation: 0.17kW Semiconductor structure: bidirectional; double Version: ESD Mounting: SMD Case: SOT323-3L Max. off-state voltage: 35V Leakage current: 0.1µA Number of channels: 2 Application: automotive industry; CAN Kind of package: reel; tape |
на замовлення 1306 шт: термін постачання 14-30 дні (днів) |
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| ESDCAN03-2BM3Y | STMicroelectronics |
Category: Protection diodes - arrays Description: Diode: TVS array; 3.3A; bidirectional,double; ESD; QFN3; Ch: 1 Type of diode: TVS array Max. forward impulse current: 3.3A Semiconductor structure: bidirectional; double Version: ESD Mounting: SMD Case: QFN3 Leakage current: 50nA Number of channels: 1 Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ESDCAN04-2BLY | STMicroelectronics |
Category: Protection diodes - arrays Description: Diode: TVS array; 3.7A; 230W; bidirectional,double; ESD Type of diode: TVS array Max. forward impulse current: 3.7A Peak pulse power dissipation: 0.23kW Semiconductor structure: bidirectional; double Version: ESD Mounting: SMD Max. off-state voltage: 25.5V Leakage current: 50nA Application: automotive industry; CAN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2N3439 | STMicroelectronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 450V; 1A; 1W; TO5 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 450V Collector current: 1A Power: 1W Case: TO5 Mounting: THT Frequency: 15MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| LPS22HBTR | STMicroelectronics |
Category: Pressure Sensors Description: Sensor: pressure; 260mbar÷1.26bar; absolute; OUT: I2C / SPI; SMT Type of sensor: pressure Pressure measuring range: 260mbar...1.26bar Operation mode: absolute Output configuration: I2C / SPI Mounting: SMT Operating temperature: -40...85°C Supply voltage: 1.7...3.6V |
на замовлення 7520 шт: термін постачання 14-30 дні (днів) |
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| EVSPIN32G4 | STMicroelectronics |
Category: Development kits - Unclassified Description: Dev.kit: STM32; Comp: STM32G431 Components: STM32G431 Type of development kit: STM32 |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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| EVSPIN32G4NH | STMicroelectronics |
Category: Unclassified Description: Dev.kit: STM32; Comp: STM32G431 Components: STM32G431 Type of development kit: STM32 |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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BZW06-376BRL | STMicroelectronics |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 418V; 5.7A; bidirectional; ±5%; DO15; 600W; BZW06 Type of diode: TVS Max. off-state voltage: 376V Breakdown voltage: 418V Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.2µA Peak pulse power dissipation: 0.6kW Manufacturer series: BZW06 Kind of package: reel; tape Max. forward impulse current: 5.7A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STGW30NC60KD | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 28A; 200W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 28A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 125A Mounting: THT Gate charge: 96nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 304 шт: термін постачання 14-30 дні (днів) |
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| HCF4013YM013TR | STMicroelectronics |
Category: Flip-Flops Description: IC: digital Type of integrated circuit: digital |
на замовлення 20000 шт: термін постачання 14-30 дні (днів) |
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ST890DTR | STMicroelectronics |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; Ch: 1; P-Channel; SMD; DFN8; -40÷85°C Case: DFN8 On-state resistance: 75mΩ Mounting: SMD Active logical level: high Type of integrated circuit: power switch Kind of output: P-Channel Operating temperature: -40...85°C Integrated circuit features: thermal protection Turn-on time: 50µs Turn-off time: 10µs Kind of integrated circuit: high-side Number of channels: 1 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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STGD5H60DF | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 5A; 83W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 83W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| B-L462E-CELL1 | STMicroelectronics |
Category: Development kits - Unclassified Description: Dev.kit: STM32; Interface: I2C,WiFi; Architecture: Cortex M4 Interface: I2C; WiFi Kind of architecture: Cortex M4 Type of development kit: STM32 Components: HTS221; LIS3MDL; LPS22HB; LSM6DSL; MP34DT01; SPSGRF-868; STM32L4; VL53L0X |
на замовлення 9 шт: термін постачання 14-30 дні (днів) |
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| VIPER0PLDTR | STMicroelectronics |
Category: Voltage regulators - PWM circuits Description: IC: PMIC Type of integrated circuit: PMIC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
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STW25N60M2-EP | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11.3A; Idm: 72A; 150W; TO247 Polarisation: unipolar Drain current: 11.3A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±25V Kind of package: tube Case: TO247 On-state resistance: 0.175Ω Mounting: THT Pulsed drain current: 72A Power dissipation: 150W Gate charge: 29nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32F722ZET6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 216MHz; LQFP144; 1.7÷3.6VDC Mounting: SMD Integrated circuit features: TRNG Kind of architecture: Cortex M7 Clock frequency: 216MHz Kind of core: 32-bit Memory: 256kB SRAM; 512kB FLASH Number of 12bit D/A converters: 2 Number of 16bit timers: 12 Number of 12bit A/D converters: 16 Case: LQFP144 Interface: I2C x4; I2S x3; SAI; UART x4; USART x4; USB high-speed; USB OTG Family: STM32F7 Number of 32bit timers: 2 Supply voltage: 1.7...3.6V DC Number of inputs/outputs: 114 Type of integrated circuit: STM32 ARM microcontroller |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TSV321RILT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.4MHz; Ch: 1; 2.5÷6VDC; SOT23-5; 6mV Type of integrated circuit: operational amplifier Bandwidth: 1.4MHz Number of channels: 1 Mounting: SMT Voltage supply range: 2.5...6V DC Case: SOT23-5 Operating temperature: -40...125°C Slew rate: 0.6V/μs Integrated circuit features: low power; rail-to-rail Quiescent current: 875µA Input offset voltage: 6mV Kind of package: reel; tape Input bias current: 0.15µA Input offset current: 60nA |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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TSV321RAILT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.4MHz; Ch: 1; 2.5÷6VDC; SOT23-5; 6mV Type of integrated circuit: operational amplifier Bandwidth: 1.4MHz Number of channels: 1 Mounting: SMT Voltage supply range: 2.5...6V DC Case: SOT23-5 Operating temperature: -40...125°C Slew rate: 0.6V/μs Integrated circuit features: low power; rail-to-rail Quiescent current: 875µA Input offset voltage: 6mV Kind of package: reel; tape Input bias current: 0.15µA Input offset current: 60nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TSV321RAIYLT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.4MHz; Ch: 1; 2.5÷6VDC; SOT23-5; 6mV Type of integrated circuit: operational amplifier Bandwidth: 1.4MHz Number of channels: 1 Mounting: SMT Voltage supply range: 2.5...6V DC Case: SOT23-5 Operating temperature: -40...125°C Slew rate: 0.6V/μs Integrated circuit features: low power; rail-to-rail Quiescent current: 875µA Input offset voltage: 6mV Kind of package: reel; tape Input bias current: 0.15µA Input offset current: 60nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TSV321RIYLT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.4MHz; Ch: 1; 2.5÷6VDC; SOT23-5; 6mV Type of integrated circuit: operational amplifier Bandwidth: 1.4MHz Number of channels: 1 Mounting: SMT Voltage supply range: 2.5...6V DC Case: SOT23-5 Operating temperature: -40...125°C Slew rate: 0.6V/μs Integrated circuit features: low power; rail-to-rail Quiescent current: 875µA Input offset voltage: 6mV Kind of package: reel; tape Input bias current: 0.15µA Input offset current: 60nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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P6KE24A | STMicroelectronics |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 24V Max. forward impulse current: 18A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
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STTH3L06U | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 60ns; SMB; Ufmax: 0.85V; Ifsm: 60A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 60ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 0.85V Max. forward impulse current: 60A Kind of package: reel; tape |
на замовлення 5744 шт: термін постачання 14-30 дні (днів) |
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| STTH3L06S | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 60ns; SMC; Ufmax: 0.85V; Ifsm: 60A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 60ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Max. forward voltage: 0.85V Max. forward impulse current: 60A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| STTH3L06UFY | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 70ns; SMB flat; Ufmax: 1.4V; Ir: 3uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 70ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB flat Max. forward voltage: 1.4V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry Leakage current: 3µA |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
| M95160-DRMN3TP/K | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; SPI; 2kx8bit; SOIC8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: SPI Memory organisation: 2kx8bit Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C |
на замовлення 12500 шт: термін постачання 14-30 дні (днів) |
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STW45N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 210W Case: TO247 Gate-source voltage: ±20V On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||||||
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STB45N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK Type of transistor: N-MOSFET Power dissipation: 210W Case: D2PAK Mounting: SMD Kind of package: reel; tape Pulsed drain current: 140A Polarisation: unipolar Drain current: 22A Kind of channel: enhancement Drain-source voltage: 710V Gate-source voltage: ±25V On-state resistance: 78mΩ |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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TS4040DILT-2.5 | STMicroelectronics |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Kind of package: reel; tape Maximum output current: 15mA |
на замовлення 550 шт: термін постачання 14-30 дні (днів) |
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2N3440 | STMicroelectronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 300V; 1A; 1W; TO5 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 1A Power: 1W Case: TO5 Mounting: THT Frequency: 15MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| STMPS2242MTR | STMicroelectronics |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 800mA; Ch: 4; SMD; SOIC8; -40÷125°C Mounting: SMD Number of channels: 4 Case: SOIC8 Output current: 0.8A Type of integrated circuit: power switch Operating temperature: -40...125°C Integrated circuit features: thermal protection Kind of integrated circuit: low-side On-state resistance: 0.105Ω Active logical level: high |
на замовлення 5000 шт: термін постачання 14-30 дні (днів) |
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STM32G474QET6TR | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 170MHz; LQFP128; 1.71÷3.6VDC Interface: CAN-FD x3; I2C x4; LPUART; QUAD SPI; SAI; SPI x4; UART x2; USART x3; USB Kind of architecture: Cortex M4 Kind of core: 32-bit Memory: 128kB SRAM; 512kB FLASH Number of 12bit D/A converters: 7 Kind of package: reel; tape Number of 16bit timers: 11 Number of 12bit A/D converters: 42 Case: LQFP128 Family: STM32G4 Number of 32bit timers: 2 Mounting: SMD Supply voltage: 1.71...3.6V DC Number of inputs/outputs: 107 Type of integrated circuit: STM32 ARM microcontroller Operating temperature: -40...85°C Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog Clock frequency: 170MHz |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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TSX564AIPT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 900kHz; Ch: 4; 3÷16VDC; TSSOP14; 1.8mV Mounting: SMT Input offset voltage: 1.8mV Slew rate: 1.1V/μs Type of integrated circuit: operational amplifier Operating temperature: -40...125°C Integrated circuit features: micropower; rail-to-rail Input bias current: 0.2nA Voltage supply range: 3...16V DC Quiescent current: 400µA Kind of package: reel; tape Input offset current: 0.2nA Case: TSSOP14 Number of channels: 4 Bandwidth: 0.9MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
LD1117S50TR | STMicroelectronics |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1V Output voltage: 5V Output current: 0.8A Case: SOT223 Mounting: SMD Manufacturer series: LD1117 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 0...15V |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
 |
LM2904WDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 9mV Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...30V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.6V/μs Integrated circuit features: low power Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 40nA Input bias current: 0.2µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
STW20NM50 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 550V; 20A; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 550V Drain current: 20A Case: TO247 Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. |
| STM32L443RCT6TR |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP64; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; SWPMI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 64kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 2
Family: STM32L4
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP64; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; SWPMI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 64kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 2
Family: STM32L4
Kind of core: 32-bit
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STGWT60H65FB |
|
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| Z0107DA 2AL2 |
|
Виробник: STMicroelectronics
Category: Triacs
Description: 400V; 800mA; Igt: 5mA; TO92
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Category: Triacs
Description: 400V; 800mA; Igt: 5mA; TO92
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
на замовлення 12000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 4.38 грн |
| Z0107MUF |
|
Виробник: STMicroelectronics
Category: Triacs
Description: 600V; 1A; Igt: 5mA; SMB
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5mA
Case: SMB
Mounting: SMD
Category: Triacs
Description: 600V; 1A; Igt: 5mA; SMB
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5mA
Case: SMB
Mounting: SMD
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 6.04 грн |
| STTH2R06UFY |
|
Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 85ns; SMB flat; Ufmax: 1.9V; Ir: 2uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 85ns
Semiconductor structure: single diode
Case: SMB flat
Max. forward voltage: 1.9V
Max. forward impulse current: 28A
Leakage current: 2µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 85ns; SMB flat; Ufmax: 1.9V; Ir: 2uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 85ns
Semiconductor structure: single diode
Case: SMB flat
Max. forward voltage: 1.9V
Max. forward impulse current: 28A
Leakage current: 2µA
на замовлення 15000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 538+ | 10.49 грн |
| SM15T36AY |
|
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Operating temperature: -40...150°C
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Operating temperature: -40...150°C
Number of channels: 1
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 16.98 грн |
| TIP142T |
|
Виробник: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 10A; 125W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 10A; 125W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 950 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 160.87 грн |
| 10+ | 140.38 грн |
| 22+ | 43.66 грн |
| 60+ | 41.26 грн |
| STM32G491RCI3 |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; UFBGA64; -40÷125°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: UFBGA64
Interface: I2C; IrDA; QSPI; SAI; UART; USART; USB
Kind of architecture: Cortex M4
Operating temperature: -40...125°C
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; UFBGA64; -40÷125°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: UFBGA64
Interface: I2C; IrDA; QSPI; SAI; UART; USART; USB
Kind of architecture: Cortex M4
Operating temperature: -40...125°C
Kind of core: 32-bit
на замовлення 1960 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 490+ | 370.61 грн |
| STM32G474VBT3 |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB FLASH; 128kB SRAM
Operating temperature: -40...125°C
Number of 12bit A/D converters: 5
Number of comparators: 7
Number of 12bit D/A converters: 7
Number of 16bit timers: 11
Number of 32bit timers: 2
Family: STM32G4
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB FLASH; 128kB SRAM
Operating temperature: -40...125°C
Number of 12bit A/D converters: 5
Number of comparators: 7
Number of 12bit D/A converters: 7
Number of 16bit timers: 11
Number of 32bit timers: 2
Family: STM32G4
Kind of core: 32-bit
товару немає в наявності
Мінімальне замовлення: 90 шт
В кошику
од. на суму грн.
| LM2902YQ5T |
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 4; 3÷30VDC; QFN16; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...30V DC
Case: QFN16
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: low power
Input offset voltage: 2mV
Input bias current: 20nA
Input offset current: 2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 4; 3÷30VDC; QFN16; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...30V DC
Case: QFN16
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: low power
Input offset voltage: 2mV
Input bias current: 20nA
Input offset current: 2nA
на замовлення 15000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 550+ | 10.22 грн |
| ESDCAN06-2BLY |
|
Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 38V; 3A; 230W; bidirectional,double; ESD; SOT23-3
Type of diode: TVS array
Breakdown voltage: 38V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.23kW
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 35V
Leakage current: 0.1µA
Number of channels: 2
Application: automotive industry; CAN
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 38V; 3A; 230W; bidirectional,double; ESD; SOT23-3
Type of diode: TVS array
Breakdown voltage: 38V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.23kW
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 35V
Leakage current: 0.1µA
Number of channels: 2
Application: automotive industry; CAN
Kind of package: reel; tape
на замовлення 19216 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 16.89 грн |
| 37+ | 11.22 грн |
| 44+ | 9.47 грн |
| 100+ | 7.54 грн |
| 306+ | 3.09 грн |
| 840+ | 2.93 грн |
| ESDCAN24-2BLY |
|
Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 27V; 5.5A; 230W; bidirectional,double; ESD; Ch: 2
Type of diode: TVS array
Breakdown voltage: 27V
Max. forward impulse current: 5.5A
Peak pulse power dissipation: 0.23kW
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 24V
Leakage current: 0.1µA
Number of channels: 2
Application: automotive industry; CAN
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 27V; 5.5A; 230W; bidirectional,double; ESD; Ch: 2
Type of diode: TVS array
Breakdown voltage: 27V
Max. forward impulse current: 5.5A
Peak pulse power dissipation: 0.23kW
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 24V
Leakage current: 0.1µA
Number of channels: 2
Application: automotive industry; CAN
Kind of package: reel; tape
на замовлення 12890 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.44 грн |
| 23+ | 18.40 грн |
| 27+ | 15.60 грн |
| 50+ | 13.78 грн |
| 100+ | 12.13 грн |
| 163+ | 5.78 грн |
| 449+ | 5.45 грн |
| 9000+ | 5.28 грн |
| ESDCAN05-2BWY |
|
Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 39V; 3A; 170W; bidirectional,double; ESD; Ch: 2
Type of diode: TVS array
Breakdown voltage: 39V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.17kW
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: SOT323-3L
Max. off-state voltage: 36V
Leakage current: 0.1µA
Number of channels: 2
Application: automotive industry; CAN
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 39V; 3A; 170W; bidirectional,double; ESD; Ch: 2
Type of diode: TVS array
Breakdown voltage: 39V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.17kW
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: SOT323-3L
Max. off-state voltage: 36V
Leakage current: 0.1µA
Number of channels: 2
Application: automotive industry; CAN
Kind of package: reel; tape
на замовлення 1373 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.33 грн |
| 34+ | 12.46 грн |
| 50+ | 10.73 грн |
| 100+ | 10.32 грн |
| 139+ | 6.85 грн |
| 382+ | 6.44 грн |
| ESDCAN06-2BWY |
|
Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 38V; 3A; 170W; bidirectional,double; ESD; Ch: 2
Type of diode: TVS array
Breakdown voltage: 38V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.17kW
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: SOT323-3L
Max. off-state voltage: 35V
Leakage current: 0.1µA
Number of channels: 2
Application: automotive industry; CAN
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 38V; 3A; 170W; bidirectional,double; ESD; Ch: 2
Type of diode: TVS array
Breakdown voltage: 38V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.17kW
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: SOT323-3L
Max. off-state voltage: 35V
Leakage current: 0.1µA
Number of channels: 2
Application: automotive industry; CAN
Kind of package: reel; tape
на замовлення 1306 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.11 грн |
| 19+ | 22.12 грн |
| 23+ | 18.40 грн |
| 50+ | 11.22 грн |
| 100+ | 9.41 грн |
| 152+ | 6.27 грн |
| 417+ | 5.86 грн |
| ESDCAN03-2BM3Y |
|
Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 3.3A; bidirectional,double; ESD; QFN3; Ch: 1
Type of diode: TVS array
Max. forward impulse current: 3.3A
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: QFN3
Leakage current: 50nA
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 3.3A; bidirectional,double; ESD; QFN3; Ch: 1
Type of diode: TVS array
Max. forward impulse current: 3.3A
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: QFN3
Leakage current: 50nA
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| ESDCAN04-2BLY |
|
Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 3.7A; 230W; bidirectional,double; ESD
Type of diode: TVS array
Max. forward impulse current: 3.7A
Peak pulse power dissipation: 0.23kW
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Max. off-state voltage: 25.5V
Leakage current: 50nA
Application: automotive industry; CAN
Category: Protection diodes - arrays
Description: Diode: TVS array; 3.7A; 230W; bidirectional,double; ESD
Type of diode: TVS array
Max. forward impulse current: 3.7A
Peak pulse power dissipation: 0.23kW
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Max. off-state voltage: 25.5V
Leakage current: 50nA
Application: automotive industry; CAN
товару немає в наявності
В кошику
од. на суму грн.
| 2N3439 |
|
Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 1A; 1W; TO5
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 1A
Power: 1W
Case: TO5
Mounting: THT
Frequency: 15MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 1A; 1W; TO5
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 1A
Power: 1W
Case: TO5
Mounting: THT
Frequency: 15MHz
товару немає в наявності
В кошику
од. на суму грн.
| LPS22HBTR |
|
Виробник: STMicroelectronics
Category: Pressure Sensors
Description: Sensor: pressure; 260mbar÷1.26bar; absolute; OUT: I2C / SPI; SMT
Type of sensor: pressure
Pressure measuring range: 260mbar...1.26bar
Operation mode: absolute
Output configuration: I2C / SPI
Mounting: SMT
Operating temperature: -40...85°C
Supply voltage: 1.7...3.6V
Category: Pressure Sensors
Description: Sensor: pressure; 260mbar÷1.26bar; absolute; OUT: I2C / SPI; SMT
Type of sensor: pressure
Pressure measuring range: 260mbar...1.26bar
Operation mode: absolute
Output configuration: I2C / SPI
Mounting: SMT
Operating temperature: -40...85°C
Supply voltage: 1.7...3.6V
на замовлення 7520 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 131.54 грн |
| 225+ | 117.19 грн |
| EVSPIN32G4 |
|
Виробник: STMicroelectronics
Category: Development kits - Unclassified
Description: Dev.kit: STM32; Comp: STM32G431
Components: STM32G431
Type of development kit: STM32
Category: Development kits - Unclassified
Description: Dev.kit: STM32; Comp: STM32G431
Components: STM32G431
Type of development kit: STM32
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 18491.62 грн |
| 2+ | 15739.76 грн |
| EVSPIN32G4NH |
|
Виробник: STMicroelectronics
Category: Unclassified
Description: Dev.kit: STM32; Comp: STM32G431
Components: STM32G431
Type of development kit: STM32
Category: Unclassified
Description: Dev.kit: STM32; Comp: STM32G431
Components: STM32G431
Type of development kit: STM32
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11628.59 грн |
| BZW06-376BRL |
|
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 418V; 5.7A; bidirectional; ±5%; DO15; 600W; BZW06
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.2µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Kind of package: reel; tape
Max. forward impulse current: 5.7A
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 418V; 5.7A; bidirectional; ±5%; DO15; 600W; BZW06
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.2µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Kind of package: reel; tape
Max. forward impulse current: 5.7A
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| STGW30NC60KD |
|
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 125A
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 125A
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 304 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 489.71 грн |
| 5+ | 385.41 грн |
| 9+ | 117.19 грн |
| 23+ | 110.59 грн |
| HCF4013YM013TR |
|
Виробник: STMicroelectronics
Category: Flip-Flops
Description: IC: digital
Type of integrated circuit: digital
Category: Flip-Flops
Description: IC: digital
Type of integrated circuit: digital
на замовлення 20000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 446+ | 12.62 грн |
| ST890DTR |
|
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; P-Channel; SMD; DFN8; -40÷85°C
Case: DFN8
On-state resistance: 75mΩ
Mounting: SMD
Active logical level: high
Type of integrated circuit: power switch
Kind of output: P-Channel
Operating temperature: -40...85°C
Integrated circuit features: thermal protection
Turn-on time: 50µs
Turn-off time: 10µs
Kind of integrated circuit: high-side
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; P-Channel; SMD; DFN8; -40÷85°C
Case: DFN8
On-state resistance: 75mΩ
Mounting: SMD
Active logical level: high
Type of integrated circuit: power switch
Kind of output: P-Channel
Operating temperature: -40...85°C
Integrated circuit features: thermal protection
Turn-on time: 50µs
Turn-off time: 10µs
Kind of integrated circuit: high-side
Number of channels: 1
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 132+ | 44.44 грн |
| 660+ | 39.78 грн |
| STGD5H60DF |
|
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 83W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 83W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 83W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 83W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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| B-L462E-CELL1 |
|
Виробник: STMicroelectronics
Category: Development kits - Unclassified
Description: Dev.kit: STM32; Interface: I2C,WiFi; Architecture: Cortex M4
Interface: I2C; WiFi
Kind of architecture: Cortex M4
Type of development kit: STM32
Components: HTS221; LIS3MDL; LPS22HB; LSM6DSL; MP34DT01; SPSGRF-868; STM32L4; VL53L0X
Category: Development kits - Unclassified
Description: Dev.kit: STM32; Interface: I2C,WiFi; Architecture: Cortex M4
Interface: I2C; WiFi
Kind of architecture: Cortex M4
Type of development kit: STM32
Components: HTS221; LIS3MDL; LPS22HB; LSM6DSL; MP34DT01; SPSGRF-868; STM32L4; VL53L0X
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7730.47 грн |
| 4+ | 6579.96 грн |
| VIPER0PLDTR |
|
Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
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Мінімальне замовлення: 2500 шт
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| STW25N60M2-EP |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.3A; Idm: 72A; 150W; TO247
Polarisation: unipolar
Drain current: 11.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: tube
Case: TO247
On-state resistance: 0.175Ω
Mounting: THT
Pulsed drain current: 72A
Power dissipation: 150W
Gate charge: 29nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.3A; Idm: 72A; 150W; TO247
Polarisation: unipolar
Drain current: 11.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: tube
Case: TO247
On-state resistance: 0.175Ω
Mounting: THT
Pulsed drain current: 72A
Power dissipation: 150W
Gate charge: 29nC
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| STM32F722ZET6 |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP144; 1.7÷3.6VDC
Mounting: SMD
Integrated circuit features: TRNG
Kind of architecture: Cortex M7
Clock frequency: 216MHz
Kind of core: 32-bit
Memory: 256kB SRAM; 512kB FLASH
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 12bit A/D converters: 16
Case: LQFP144
Interface: I2C x4; I2S x3; SAI; UART x4; USART x4; USB high-speed; USB OTG
Family: STM32F7
Number of 32bit timers: 2
Supply voltage: 1.7...3.6V DC
Number of inputs/outputs: 114
Type of integrated circuit: STM32 ARM microcontroller
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP144; 1.7÷3.6VDC
Mounting: SMD
Integrated circuit features: TRNG
Kind of architecture: Cortex M7
Clock frequency: 216MHz
Kind of core: 32-bit
Memory: 256kB SRAM; 512kB FLASH
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 12bit A/D converters: 16
Case: LQFP144
Interface: I2C x4; I2S x3; SAI; UART x4; USART x4; USB high-speed; USB OTG
Family: STM32F7
Number of 32bit timers: 2
Supply voltage: 1.7...3.6V DC
Number of inputs/outputs: 114
Type of integrated circuit: STM32 ARM microcontroller
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| TSV321RILT |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 1; 2.5÷6VDC; SOT23-5; 6mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 2.5...6V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Integrated circuit features: low power; rail-to-rail
Quiescent current: 875µA
Input offset voltage: 6mV
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 60nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 1; 2.5÷6VDC; SOT23-5; 6mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 2.5...6V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Integrated circuit features: low power; rail-to-rail
Quiescent current: 875µA
Input offset voltage: 6mV
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 60nA
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 69.32 грн |
| 8+ | 55.13 грн |
| 10+ | 47.62 грн |
| 24+ | 40.52 грн |
| 50+ | 38.38 грн |
| 64+ | 38.29 грн |
| 100+ | 36.81 грн |
| TSV321RAILT |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 1; 2.5÷6VDC; SOT23-5; 6mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 2.5...6V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Integrated circuit features: low power; rail-to-rail
Quiescent current: 875µA
Input offset voltage: 6mV
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 60nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 1; 2.5÷6VDC; SOT23-5; 6mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 2.5...6V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Integrated circuit features: low power; rail-to-rail
Quiescent current: 875µA
Input offset voltage: 6mV
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 60nA
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| TSV321RAIYLT |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 1; 2.5÷6VDC; SOT23-5; 6mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 2.5...6V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Integrated circuit features: low power; rail-to-rail
Quiescent current: 875µA
Input offset voltage: 6mV
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 60nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 1; 2.5÷6VDC; SOT23-5; 6mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 2.5...6V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Integrated circuit features: low power; rail-to-rail
Quiescent current: 875µA
Input offset voltage: 6mV
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 60nA
Application: automotive industry
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| TSV321RIYLT |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 1; 2.5÷6VDC; SOT23-5; 6mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 2.5...6V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Integrated circuit features: low power; rail-to-rail
Quiescent current: 875µA
Input offset voltage: 6mV
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 60nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 1; 2.5÷6VDC; SOT23-5; 6mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 2.5...6V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Integrated circuit features: low power; rail-to-rail
Quiescent current: 875µA
Input offset voltage: 6mV
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 60nA
Application: automotive industry
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| P6KE24A |
|
Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
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Мінімальне замовлення: 3 шт
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| STTH3L06U |
|
Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 60ns; SMB; Ufmax: 0.85V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.85V
Max. forward impulse current: 60A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 60ns; SMB; Ufmax: 0.85V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.85V
Max. forward impulse current: 60A
Kind of package: reel; tape
на замовлення 5744 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.55 грн |
| 41+ | 10.07 грн |
| 44+ | 9.57 грн |
| 100+ | 9.16 грн |
| STTH3L06S |
|
Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 60ns; SMC; Ufmax: 0.85V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.85V
Max. forward impulse current: 60A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 60ns; SMC; Ufmax: 0.85V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.85V
Max. forward impulse current: 60A
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
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| STTH3L06UFY |
|
Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 70ns; SMB flat; Ufmax: 1.4V; Ir: 3uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 70ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB flat
Max. forward voltage: 1.4V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 3µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 70ns; SMB flat; Ufmax: 1.4V; Ir: 3uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 70ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB flat
Max. forward voltage: 1.4V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 3µA
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| M95160-DRMN3TP/K |
|
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; SPI; 2kx8bit; SOIC8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: SPI
Memory organisation: 2kx8bit
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; SPI; 2kx8bit; SOIC8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: SPI
Memory organisation: 2kx8bit
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
на замовлення 12500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 27.02 грн |
| STW45N65M5 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
Мінімальне замовлення: 600 шт
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| STB45N65M5 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 210W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 140A
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 710V
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 210W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 140A
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 710V
Gate-source voltage: ±25V
On-state resistance: 78mΩ
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| TS4040DILT-2.5 |
|
Виробник: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
на замовлення 550 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 45.33 грн |
| 12+ | 34.83 грн |
| 14+ | 29.88 грн |
| 25+ | 23.27 грн |
| 60+ | 15.93 грн |
| 125+ | 15.52 грн |
| 163+ | 15.02 грн |
| 250+ | 14.44 грн |
| 2N3440 |
|
Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 1A; 1W; TO5
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 1A
Power: 1W
Case: TO5
Mounting: THT
Frequency: 15MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 1A; 1W; TO5
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 1A
Power: 1W
Case: TO5
Mounting: THT
Frequency: 15MHz
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| STMPS2242MTR |
|
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 800mA; Ch: 4; SMD; SOIC8; -40÷125°C
Mounting: SMD
Number of channels: 4
Case: SOIC8
Output current: 0.8A
Type of integrated circuit: power switch
Operating temperature: -40...125°C
Integrated circuit features: thermal protection
Kind of integrated circuit: low-side
On-state resistance: 0.105Ω
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 800mA; Ch: 4; SMD; SOIC8; -40÷125°C
Mounting: SMD
Number of channels: 4
Case: SOIC8
Output current: 0.8A
Type of integrated circuit: power switch
Operating temperature: -40...125°C
Integrated circuit features: thermal protection
Kind of integrated circuit: low-side
On-state resistance: 0.105Ω
Active logical level: high
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 271+ | 20.62 грн |
| STM32G474QET6TR |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP128; 1.71÷3.6VDC
Interface: CAN-FD x3; I2C x4; LPUART; QUAD SPI; SAI; SPI x4; UART x2; USART x3; USB
Kind of architecture: Cortex M4
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Number of 12bit D/A converters: 7
Kind of package: reel; tape
Number of 16bit timers: 11
Number of 12bit A/D converters: 42
Case: LQFP128
Family: STM32G4
Number of 32bit timers: 2
Mounting: SMD
Supply voltage: 1.71...3.6V DC
Number of inputs/outputs: 107
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Clock frequency: 170MHz
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP128; 1.71÷3.6VDC
Interface: CAN-FD x3; I2C x4; LPUART; QUAD SPI; SAI; SPI x4; UART x2; USART x3; USB
Kind of architecture: Cortex M4
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Number of 12bit D/A converters: 7
Kind of package: reel; tape
Number of 16bit timers: 11
Number of 12bit A/D converters: 42
Case: LQFP128
Family: STM32G4
Number of 32bit timers: 2
Mounting: SMD
Supply voltage: 1.71...3.6V DC
Number of inputs/outputs: 107
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Clock frequency: 170MHz
товару немає в наявності
Мінімальне замовлення: 1000 шт
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од. на суму грн.
| TSX564AIPT |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 900kHz; Ch: 4; 3÷16VDC; TSSOP14; 1.8mV
Mounting: SMT
Input offset voltage: 1.8mV
Slew rate: 1.1V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...125°C
Integrated circuit features: micropower; rail-to-rail
Input bias current: 0.2nA
Voltage supply range: 3...16V DC
Quiescent current: 400µA
Kind of package: reel; tape
Input offset current: 0.2nA
Case: TSSOP14
Number of channels: 4
Bandwidth: 0.9MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 900kHz; Ch: 4; 3÷16VDC; TSSOP14; 1.8mV
Mounting: SMT
Input offset voltage: 1.8mV
Slew rate: 1.1V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...125°C
Integrated circuit features: micropower; rail-to-rail
Input bias current: 0.2nA
Voltage supply range: 3...16V DC
Quiescent current: 400µA
Kind of package: reel; tape
Input offset current: 0.2nA
Case: TSSOP14
Number of channels: 4
Bandwidth: 0.9MHz
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| LD1117S50TR |
|
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 5V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Manufacturer series: LD1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 0...15V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 5V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Manufacturer series: LD1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 0...15V
товару немає в наявності
Мінімальне замовлення: 3 шт
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од. на суму грн.
| LM2904WDT |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Integrated circuit features: low power
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 40nA
Input bias current: 0.2µA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Integrated circuit features: low power
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 40nA
Input bias current: 0.2µA
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| STW20NM50 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 20A; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 20A
Case: TO247
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 20A; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 20A
Case: TO247
Mounting: THT
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