Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25642) > Сторінка 219 з 428
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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GBU15L05 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 600V 15A GBUPackaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
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GBU15L06 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 800V 15A GBUPackaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 996 шт: термін постачання 21-31 дні (днів) |
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MBR750 C0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 7.5A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBR750HC0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 7.5A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1N4763AH | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 91V 1W DO204ALQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V Power - Max: 1 W Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 250 Ohms Voltage - Zener (Nom) (Vz): 91 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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P6KE400AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 342VWM 548VC DO204ACPackaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 1.1A Voltage - Reverse Standoff (Typ): 342V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 380V Voltage - Clamping (Max) @ Ipp: 548V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||
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1SMA5933 | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 1.5W DO214ACCurrent - Reverse Leakage @ Vr: 500 nA @ 16.7 V Power - Max: 1.5 W Supplier Device Package: DO-214AC (SMA) Impedance (Max) (Zzt): 17.5 Ohms Voltage - Zener (Nom) (Vz): 22 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Tolerance: ±5% Packaging: Tape & Reel (TR) |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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1SMA5933H | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 1.5W DO214AC |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||
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TSM056NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 54A, SINGLE N-CHANNEL POWERInput Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 78.9W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TSM056NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 54A, SINGLE N-CHANNEL POWERInput Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 78.9W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TSM032NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 81A, SINGLE N-CHANNEL POWERPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TSM032NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 81A, SINGLE N-CHANNEL POWERPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V |
на замовлення 4220 шт: термін постачання 21-31 дні (днів) |
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TSM070NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 54A, SINGLE N-CHANNEL POWERTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 46.8W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc) FET Type: N-Channel |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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TSM070NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 54A, SINGLE N-CHANNEL POWERInput Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 46.8W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 4345 шт: термін постачання 21-31 дні (днів) |
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TSM019NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 100A, SINGLE N-CHANNEL POWEPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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TSM019NH04LCR RLG | Taiwan Semiconductor Corporation |
Description: 40V, 100A, SINGLE N-CHANNEL POWEPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V |
на замовлення 4965 шт: термін постачання 21-31 дні (днів) |
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SRT19 A0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 1A TS-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SRT19 R0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 1A TS-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SRT19 A1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 1A TS-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SRT19HA1G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 1A TS-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SRT19HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 1A TS-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SRT19 | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 1A 90V TS-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SRT19HR0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 1A TS-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SRT19H | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 1A 90V TS-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BYG23M | Taiwan Semiconductor Corporation |
Description: DIODE STD 1000V 1.5A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BZX55B62 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 62V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX55B39 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 39V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX55B3V0 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX55B33 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX55B8V2 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.2V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX55B18 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 18V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX55B22 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX55B13 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX55B20 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 20V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX55B2V4 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 2.4V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX55B3V9 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.9V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX55B4V3 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.3V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX55B56 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 56V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMDJ70A M6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 70VWM 113VC DO214ABPart Status: Discontinued at Digi-Key Power Line Protection: No Power - Peak Pulse: 3000W (3kW) Voltage - Clamping (Max) @ Ipp: 113V Voltage - Breakdown (Min): 77.8V Unidirectional Channels: 1 Supplier Device Package: DO-214AB (SMC) Voltage - Reverse Standoff (Typ): 70V Current - Peak Pulse (10/1000µs): 26.5A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMDJ70AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 70VWM 113VC DO214ABPart Status: Active Power Line Protection: No Power - Peak Pulse: 3000W (3kW) Voltage - Clamping (Max) @ Ipp: 113V Voltage - Breakdown (Min): 77.8V Unidirectional Channels: 1 Supplier Device Package: DO-214AB (SMC) Voltage - Reverse Standoff (Typ): 70V Current - Peak Pulse (10/1000µs): 26.5A Applications: Telecom Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Qualification: AEC-Q101 Grade: Automotive Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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SMDJ70A | Taiwan Semiconductor Corporation |
Description: TVS DIODE 70VWM 113VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 26.5A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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SMDJ70AHM6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 70VWM 113VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 26.5A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX55B30 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMBJ33CAHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33VWM 53.3VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SS24M | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 2A MICRO SMAPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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SS24M | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 2A MICRO SMAPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
на замовлення 67565 шт: термін постачання 21-31 дні (днів) |
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SS24LWH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 2A SOD123WPackaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||
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SS24LWH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 2A SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
на замовлення 1418 шт: термін постачання 21-31 дні (днів) |
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| 1.5KE82AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 70.1VWM 113VC DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 13.9A Voltage - Reverse Standoff (Typ): 70.1V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 77.9V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1250 шт В кошику од. на суму грн. | |||||||||||||
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GBU2504 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 400V 25A GBUCurrent - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Average Rectified (Io): 25 A Voltage - Peak Reverse (Max): 400 V Part Status: Active Supplier Device Package: GBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBU Packaging: Tube |
на замовлення 986 шт: термін постачання 21-31 дні (днів) |
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RS1KLS | Taiwan Semiconductor Corporation |
Description: DIODE STD 800V 1.2A SOD123HEPackaging: Tape & Reel (TR) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 1.2A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||
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RS1KLS | Taiwan Semiconductor Corporation |
Description: DIODE STD 800V 1.2A SOD123HEPackaging: Cut Tape (CT) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 1.2A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 15078 шт: термін постачання 21-31 дні (днів) |
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SS26LWH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SOD123WPackaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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SS26LWH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
на замовлення 23041 шт: термін постачання 21-31 дні (днів) |
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MBRF1545CT | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 45V 15A ITO220ABCurrent - Reverse Leakage @ Vr: 500 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube Supplier Device Package: ITO-220AB Current - Average Rectified (Io) (per Diode): 15A |
на замовлення 5938 шт: термін постачання 21-31 дні (днів) |
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S15MCHV7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 15A DO214AB |
на замовлення 6560 шт: термін постачання 21-31 дні (днів) |
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S15MCHV7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 15A DO214AB |
на замовлення 6650 шт: термін постачання 21-31 дні (днів) |
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S15GCHV7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 15A DO214AB |
товару немає в наявності |
Мінімальне замовлення: 850 шт В кошику од. на суму грн. | ||||||||||||
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S15GCHV7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 15A DO214AB |
на замовлення 720 шт: термін постачання 21-31 дні (днів) |
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TPAR3J S1G | Taiwan Semiconductor Corporation |
Description: DIODE AVALANCHE 600V 3A TO277A |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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| GBU15L05 |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 80 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 374.26 грн |
| 10+ | 238.99 грн |
| GBU15L06 |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 996 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 374.26 грн |
| 10+ | 238.99 грн |
| 100+ | 170.43 грн |
| 500+ | 132.49 грн |
| MBR750 C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 7.5A TO220AC
Description: DIODE SCHOTTKY 50V 7.5A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
| MBR750HC0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
| 1N4763AH |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 91V 1W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Power - Max: 1 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 91V 1W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Power - Max: 1 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| P6KE400AH |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 342VWM 548VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 342VWM 548VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| 1SMA5933 |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
Power - Max: 1.5 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 17.5 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 22V 1.5W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
Power - Max: 1.5 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 17.5 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7500+ | 5.89 грн |
| 1SMA5933H |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
Description: DIODE ZENER 22V 1.5W DO214AC
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| TSM056NH04LCR RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 78.9W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 78.9W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 39.22 грн |
| 5000+ | 35.18 грн |
| TSM056NH04LCR RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 78.9W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 78.9W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.35 грн |
| 10+ | 85.90 грн |
| 100+ | 57.86 грн |
| 500+ | 43.01 грн |
| 1000+ | 39.38 грн |
| 2000+ | 37.19 грн |
| TSM032NH04LCR RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 52.23 грн |
| TSM032NH04LCR RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
на замовлення 4220 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 178.41 грн |
| 10+ | 110.41 грн |
| 100+ | 75.36 грн |
| 500+ | 56.63 грн |
| 1000+ | 52.10 грн |
| TSM070NH04LCR RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 46.8W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
FET Type: N-Channel
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 46.8W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
FET Type: N-Channel
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TSM070NH04LCR RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 46.8W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 46.8W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 4345 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 121.32 грн |
| 10+ | 73.68 грн |
| 100+ | 49.21 грн |
| 500+ | 36.34 грн |
| 1000+ | 33.17 грн |
| TSM019NH04LCR RLG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TSM019NH04LCR RLG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
на замовлення 4965 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 279.11 грн |
| 10+ | 175.85 грн |
| 50+ | 136.01 грн |
| 100+ | 115.58 грн |
| 500+ | 95.48 грн |
| SRT19 A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
товару немає в наявності
В кошику
од. на суму грн.
| SRT19 R0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
товару немає в наявності
В кошику
од. на суму грн.
| SRT19 A1G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
товару немає в наявності
В кошику
од. на суму грн.
| SRT19HA1G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
товару немає в наявності
В кошику
од. на суму грн.
| SRT19HA0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
товару немає в наявності
В кошику
од. на суму грн.
| SRT19 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 1A 90V TS-1
Description: DIODE SCHOTTKY 1A 90V TS-1
товару немає в наявності
В кошику
од. на суму грн.
| SRT19HR0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
товару немає в наявності
В кошику
од. на суму грн.
| SRT19H |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 1A 90V TS-1
Description: DIODE SCHOTTKY 1A 90V TS-1
товару немає в наявності
В кошику
од. на суму грн.
| BYG23M |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STD 1000V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE STD 1000V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7500+ | 5.97 грн |
| 15000+ | 5.25 грн |
| BZX55B62 A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 62V 500MW DO35
Description: DIODE ZENER 62V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| BZX55B39 A0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 500MW DO35
Description: DIODE ZENER 39V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| BZX55B3V0 A0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 500MW DO35
Description: DIODE ZENER 3V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| BZX55B33 A0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 500MW DO35
Description: DIODE ZENER 33V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| BZX55B8V2 A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW DO35
Description: DIODE ZENER 8.2V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| BZX55B18 A0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW DO35
Description: DIODE ZENER 18V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| BZX55B22 A0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW DO35
Description: DIODE ZENER 22V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| BZX55B13 A0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW DO35
Description: DIODE ZENER 13V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| BZX55B20 A0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW DO35
Description: DIODE ZENER 20V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| BZX55B2V4 A0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW DO35
Description: DIODE ZENER 2.4V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| BZX55B3V9 A0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 500MW DO35
Description: DIODE ZENER 3.9V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| BZX55B4V3 A0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW DO35
Description: DIODE ZENER 4.3V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| BZX55B56 A0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 500MW DO35
Description: DIODE ZENER 56V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| SMDJ70A M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 26.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: TVS DIODE 70VWM 113VC DO214AB
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 26.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SMDJ70AH |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 26.5A
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: TVS DIODE 70VWM 113VC DO214AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 26.5A
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SMDJ70A |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SMDJ70AHM6G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товару немає в наявності
В кошику
од. на суму грн.
| BZX55B30 A0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 500MW DO35
Description: DIODE ZENER 30V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ33CAHR5G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AA
Description: TVS DIODE 33VWM 53.3VC DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| SS24M |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12000+ | 5.38 грн |
| 36000+ | 4.53 грн |
| SS24M |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
на замовлення 67565 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.13 грн |
| 17+ | 18.02 грн |
| 50+ | 12.98 грн |
| 100+ | 10.63 грн |
| 500+ | 7.91 грн |
| SS24LWH |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SS24LWH |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
на замовлення 1418 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 28.55 грн |
| 19+ | 16.57 грн |
| 50+ | 11.94 грн |
| 100+ | 9.78 грн |
| 500+ | 7.27 грн |
| 1.5KE82AH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.9A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 70.1VWM 113VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.9A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1250 шт
В кошику
од. на суму грн.
| GBU2504 |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 25A GBU
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Description: BRIDGE RECT 1PHASE 400V 25A GBU
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
на замовлення 986 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.49 грн |
| 10+ | 79.56 грн |
| 100+ | 61.88 грн |
| 500+ | 49.22 грн |
| RS1KLS |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE STD 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STD 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| RS1KLS |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE STD 800V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STD 800V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 15078 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.79 грн |
| 23+ | 13.82 грн |
| 50+ | 9.90 грн |
| 100+ | 8.09 грн |
| 500+ | 5.97 грн |
| SS26LWH |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 5.05 грн |
| SS26LWH |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
на замовлення 23041 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 28.55 грн |
| 19+ | 16.57 грн |
| 50+ | 11.94 грн |
| 100+ | 9.78 грн |
| 500+ | 7.27 грн |
| MBRF1545CT |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 45V 15A ITO220AB
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
Description: DIODE ARR SCHOT 45V 15A ITO220AB
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
на замовлення 5938 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.27 грн |
| 50+ | 22.78 грн |
| 100+ | 22.39 грн |
| 500+ | 19.87 грн |
| 1000+ | 17.23 грн |
| 2000+ | 16.02 грн |
| S15MCHV7G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 15A DO214AB
Description: DIODE GEN PURP 1KV 15A DO214AB
на замовлення 6560 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 850+ | 39.21 грн |
| 1700+ | 30.21 грн |
| 2550+ | 27.38 грн |
| 5950+ | 24.16 грн |
| S15MCHV7G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 15A DO214AB
Description: DIODE GEN PURP 1KV 15A DO214AB
на замовлення 6650 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.74 грн |
| 10+ | 62.31 грн |
| 100+ | 47.77 грн |
| S15GCHV7G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 15A DO214AB
Description: DIODE GEN PURP 400V 15A DO214AB
товару немає в наявності
Мінімальне замовлення: 850 шт
В кошику
од. на суму грн.
| S15GCHV7G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 15A DO214AB
Description: DIODE GEN PURP 400V 15A DO214AB
на замовлення 720 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.74 грн |
| 10+ | 62.31 грн |
| 100+ | 47.77 грн |
| TPAR3J S1G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE AVALANCHE 600V 3A TO277A
Description: DIODE AVALANCHE 600V 3A TO277A
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 37.73 грн |




















