Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25642) > Сторінка 245 з 428
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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SS23LHRTG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 2A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS23LHMTG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 2A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS23LHRFG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 2A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS23L MTG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 2A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS23L MHG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 2A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS23L RFG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 2A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS23L RUG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 2A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS23LHRVG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 2A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS23L M2G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 2A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS23LHM2G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 2A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS23LHMHG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 2A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS23HR5G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 2A DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS215LWH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 2A SOD123WPackaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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SS215LWH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 2A SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
на замовлення 19900 шт: термін постачання 21-31 дні (днів) |
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SMF45AHRVG | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 72.7VC SOD123W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SMF45AHRVG | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 72.7VC SOD123W |
на замовлення 5930 шт: термін постачання 21-31 дні (днів) |
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FR154GH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1.5A DO204ACPackaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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BSS84W RFG | Taiwan Semiconductor Corporation |
Description: -60, -0.14, SINGLE P-CHANNELPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 140mA, 10V Power Dissipation (Max): 298mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BSS84W RFG | Taiwan Semiconductor Corporation |
Description: -60, -0.14, SINGLE P-CHANNELPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 140mA, 10V Power Dissipation (Max): 298mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V |
на замовлення 6875 шт: термін постачання 21-31 дні (днів) |
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BSS84 RFG | Taiwan Semiconductor Corporation |
Description: -60, -0.15, SINGLE P-CHANNELPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V Power Dissipation (Max): 357mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BSS84 RFG | Taiwan Semiconductor Corporation |
Description: -60, -0.15, SINGLE P-CHANNELPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V Power Dissipation (Max): 357mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V |
на замовлення 15055 шт: термін постачання 21-31 дні (днів) |
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TBS408 | Taiwan Semiconductor Corporation |
Description: 4A 800V STANDARD BRIDGE RECTIFIEPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TBS Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 2 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||
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TBS408 | Taiwan Semiconductor Corporation |
Description: 4A 800V STANDARD BRIDGE RECTIFIEPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TBS Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 2 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TBS606 | Taiwan Semiconductor Corporation |
Description: 6A 600V STANDARD BRIDGE RECTIFIEPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TBS Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 2 µA @ 600 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TBS606 | Taiwan Semiconductor Corporation |
Description: 6A 600V STANDARD BRIDGE RECTIFIEPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TBS Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 2 µA @ 600 V |
на замовлення 10346 шт: термін постачання 21-31 дні (днів) |
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RTBS40M M2G | Taiwan Semiconductor Corporation | Description: 300NS, 4A, 1000V, FAST RECOVERY |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||
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RTBS40M M2G | Taiwan Semiconductor Corporation | Description: 300NS, 4A, 1000V, FAST RECOVERY |
на замовлення 1739 шт: термін постачання 21-31 дні (днів) |
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GBL207 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 2A GBLPackaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 1200 шт: термін постачання 21-31 дні (днів) |
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GBL204 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 400V 2A GBLPackaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 1066 шт: термін постачання 21-31 дні (днів) |
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SF21G R0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO204AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SF21G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO204AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SF21G B0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO204AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SF21GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO204AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SF21GHB0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO204AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SF21GHR0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO204AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N4933GH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BC546B A1 | Taiwan Semiconductor Corporation |
Description: TRANS NPN 65V 0.1A TO92Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BC546B B1 | Taiwan Semiconductor Corporation |
Description: TRANS NPN 65V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N5393G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO204ACPackaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N5393GH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PGSMAJ20CAHF4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 32.4VC DO214ACPackaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 12.3A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PGSMAJ20CAHR2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 32.4VC DO214ACPart Status: Obsolete Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 32.4V Voltage - Breakdown (Min): 22.2V Bidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 12.3A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PGSMAJ20CA F4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 32.4VC DO214ACPart Status: Obsolete Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 32.4V Voltage - Breakdown (Min): 22.2V Bidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 12.3A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PGSMAJ20CAHF3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 32.4VC DO214ACSupplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 12.3A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Part Status: Obsolete Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 32.4V Voltage - Breakdown (Min): 22.2V Bidirectional Channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMCJ51AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 51VWM 82.4VC DO214ABQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 82.4V Voltage - Breakdown (Min): 56.7V Unidirectional Channels: 1 Supplier Device Package: DO-214AB (SMC) Voltage - Reverse Standoff (Typ): 51V Current - Peak Pulse (10/1000µs): 19A Applications: Telecom Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SMCJ51A M6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 51VWM 82.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SMCJ51A M6 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SMCJ51A R6 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MUR340S M6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 3A DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SA5.0CAH | Taiwan Semiconductor Corporation | Description: TVS 500W 6.7V 5% DO-15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KBU402G | Taiwan Semiconductor Corporation |
Description: DIODE BRIDGE 4A 100V KBUCurrent - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Average Rectified (Io): 4 A Voltage - Peak Reverse (Max): 100 V Part Status: Active Supplier Device Package: KBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, KBU Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BC337-40-B0 A1 | Taiwan Semiconductor Corporation |
Description: TRANS NPN 45V 0.8A TO92 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 800 mA Part Status: Obsolete Supplier Device Package: TO-92 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BC337-40-B0 B1G | Taiwan Semiconductor Corporation |
Description: TRANS NPN 45V 0.8A TO92Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 800 mA Part Status: Obsolete Supplier Device Package: TO-92 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BC337-40 A1 | Taiwan Semiconductor Corporation |
Description: TRANS NPN 45V 0.8A TO92Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 800 mA Part Status: Obsolete Supplier Device Package: TO-92 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BC337-40-B0 B1 | Taiwan Semiconductor Corporation |
Description: TRANS NPN 45V 0.8A TO92 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 800 mA Part Status: Obsolete Supplier Device Package: TO-92 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BC337-40-B0 A1G | Taiwan Semiconductor Corporation |
Description: TRANS NPN 45V 0.8A TO92Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 800 mA Part Status: Obsolete Supplier Device Package: TO-92 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BC337-40 B1 | Taiwan Semiconductor Corporation |
Description: TRANS NPN 45V 0.8A TO92 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 800 mA Part Status: Obsolete Supplier Device Package: TO-92 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
1PGSMC5352 | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 15V 5W DO214ABCurrent - Reverse Leakage @ Vr: 1 µA @ 11.5 V Power - Max: 5 W Supplier Device Package: DO-214AB (SMC) Impedance (Max) (Zzt): 3 Ohms Voltage - Zener (Nom) (Vz): 15 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
1PGSMC5352 | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 15V 5W DO214ABOperating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Tolerance: ±5% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V Power - Max: 5 W Supplier Device Package: DO-214AB (SMC) Impedance (Max) (Zzt): 3 Ohms Voltage - Zener (Nom) (Vz): 15 V |
на замовлення 1816 шт: термін постачання 21-31 дні (днів) |
|
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|
SMBJ13CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 13VWM 21.5VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 29A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. |
| SS23LHRTG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A SUB SMA
Description: DIODE SCHOTTKY 30V 2A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| SS23LHMTG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A SUB SMA
Description: DIODE SCHOTTKY 30V 2A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| SS23LHRFG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A SUB SMA
Description: DIODE SCHOTTKY 30V 2A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| SS23L MTG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A SUB SMA
Description: DIODE SCHOTTKY 30V 2A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| SS23L MHG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A SUB SMA
Description: DIODE SCHOTTKY 30V 2A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| SS23L RFG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A SUB SMA
Description: DIODE SCHOTTKY 30V 2A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| SS23L RUG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A SUB SMA
Description: DIODE SCHOTTKY 30V 2A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| SS23LHRVG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A SUB SMA
Description: DIODE SCHOTTKY 30V 2A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| SS23L M2G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A SUB SMA
Description: DIODE SCHOTTKY 30V 2A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| SS23LHM2G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A SUB SMA
Description: DIODE SCHOTTKY 30V 2A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| SS23LHMHG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A SUB SMA
Description: DIODE SCHOTTKY 30V 2A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| SS23HR5G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A DO214AA
Description: DIODE SCHOTTKY 30V 2A DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| SS215LWH |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE SCHOTTKY 150V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SS215LWH |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE SCHOTTKY 150V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
на замовлення 19900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.75 грн |
| 19+ | 16.57 грн |
| 100+ | 10.45 грн |
| 500+ | 7.31 грн |
| 1000+ | 6.51 грн |
| 2000+ | 5.83 грн |
| 5000+ | 5.01 грн |
| SMF45AHRVG |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC SOD123W
Description: TVS DIODE 45VWM 72.7VC SOD123W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.29 грн |
| SMF45AHRVG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC SOD123W
Description: TVS DIODE 45VWM 72.7VC SOD123W
на замовлення 5930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.85 грн |
| 10+ | 30.70 грн |
| 100+ | 20.86 грн |
| 500+ | 14.69 грн |
| 1000+ | 11.01 грн |
| FR154GH |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 400V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3500+ | 5.38 грн |
| BSS84W RFG |
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Виробник: Taiwan Semiconductor Corporation
Description: -60, -0.14, SINGLE P-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 140mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V
Description: -60, -0.14, SINGLE P-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 140mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.39 грн |
| BSS84W RFG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: -60, -0.14, SINGLE P-CHANNEL
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 140mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V
Description: -60, -0.14, SINGLE P-CHANNEL
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 140mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V
на замовлення 6875 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.65 грн |
| 32+ | 9.77 грн |
| 100+ | 6.09 грн |
| 500+ | 4.19 грн |
| 1000+ | 3.69 грн |
| BSS84 RFG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: -60, -0.15, SINGLE P-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 357mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V
Description: -60, -0.15, SINGLE P-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 357mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BSS84 RFG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: -60, -0.15, SINGLE P-CHANNEL
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 357mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V
Description: -60, -0.15, SINGLE P-CHANNEL
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 357mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V
на замовлення 15055 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.86 грн |
| 35+ | 8.86 грн |
| 100+ | 5.52 грн |
| 500+ | 3.79 грн |
| 1000+ | 3.33 грн |
| TBS408 |
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Виробник: Taiwan Semiconductor Corporation
Description: 4A 800V STANDARD BRIDGE RECTIFIE
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Description: 4A 800V STANDARD BRIDGE RECTIFIE
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| TBS408 |
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Виробник: Taiwan Semiconductor Corporation
Description: 4A 800V STANDARD BRIDGE RECTIFIE
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Description: 4A 800V STANDARD BRIDGE RECTIFIE
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
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В кошику
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| TBS606 |
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Виробник: Taiwan Semiconductor Corporation
Description: 6A 600V STANDARD BRIDGE RECTIFIE
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Description: 6A 600V STANDARD BRIDGE RECTIFIE
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1800+ | 23.62 грн |
| 3600+ | 20.25 грн |
| 5400+ | 19.19 грн |
| 9000+ | 16.67 грн |
| TBS606 |
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Виробник: Taiwan Semiconductor Corporation
Description: 6A 600V STANDARD BRIDGE RECTIFIE
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Description: 6A 600V STANDARD BRIDGE RECTIFIE
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
на замовлення 10346 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.51 грн |
| 10+ | 46.20 грн |
| 100+ | 31.98 грн |
| 500+ | 25.08 грн |
| RTBS40M M2G |
Виробник: Taiwan Semiconductor Corporation
Description: 300NS, 4A, 1000V, FAST RECOVERY
Description: 300NS, 4A, 1000V, FAST RECOVERY
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| RTBS40M M2G |
Виробник: Taiwan Semiconductor Corporation
Description: 300NS, 4A, 1000V, FAST RECOVERY
Description: 300NS, 4A, 1000V, FAST RECOVERY
на замовлення 1739 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.98 грн |
| 10+ | 79.26 грн |
| 100+ | 61.80 грн |
| 500+ | 47.91 грн |
| GBL207 |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.54 грн |
| 10+ | 44.90 грн |
| 100+ | 29.38 грн |
| 500+ | 21.33 грн |
| 1200+ | 18.84 грн |
| GBL204 |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 1066 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.54 грн |
| 10+ | 44.90 грн |
| 100+ | 29.38 грн |
| 500+ | 21.33 грн |
| SF21G R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO204AC
Description: DIODE GEN PURP 50V 2A DO204AC
товару немає в наявності
В кошику
од. на суму грн.
| SF21G A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO204AC
Description: DIODE GEN PURP 50V 2A DO204AC
товару немає в наявності
В кошику
од. на суму грн.
| SF21G B0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO204AC
Description: DIODE GEN PURP 50V 2A DO204AC
товару немає в наявності
В кошику
од. на суму грн.
| SF21GHA0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO204AC
Description: DIODE GEN PURP 50V 2A DO204AC
товару немає в наявності
В кошику
од. на суму грн.
| SF21GHB0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO204AC
Description: DIODE GEN PURP 50V 2A DO204AC
товару немає в наявності
В кошику
од. на суму грн.
| SF21GHR0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO204AC
Description: DIODE GEN PURP 50V 2A DO204AC
товару немає в наявності
В кошику
од. на суму грн.
| 1N4933GH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BC546B A1 |
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Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 65V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
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В кошику
од. на суму грн.
| BC546B B1 |
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Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 65V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| 1N5393G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N5393GH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ20CAHF4G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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В кошику
од. на суму грн.
| PGSMAJ20CAHR2G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 12.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 20VWM 32.4VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 12.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| PGSMAJ20CA F4G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 12.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
Description: TVS DIODE 20VWM 32.4VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 12.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
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В кошику
од. на суму грн.
| PGSMAJ20CAHF3G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 12.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Bidirectional Channels: 1
Description: TVS DIODE 20VWM 32.4VC DO214AC
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 12.3A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Bidirectional Channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ51AH |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 82.4V
Voltage - Breakdown (Min): 56.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 51V
Current - Peak Pulse (10/1000µs): 19A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: TVS DIODE 51VWM 82.4VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 82.4V
Voltage - Breakdown (Min): 56.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 51V
Current - Peak Pulse (10/1000µs): 19A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SMCJ51A M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AB
Description: TVS DIODE 51VWM 82.4VC DO214AB
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| SMCJ51A M6 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
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| SMCJ51A R6 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
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| MUR340S M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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| SA5.0CAH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS 500W 6.7V 5% DO-15
Description: TVS 500W 6.7V 5% DO-15
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| KBU402G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 4A 100V KBU
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Tray
Description: DIODE BRIDGE 4A 100V KBU
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Tray
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| BC337-40-B0 A1 |
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.8A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-92
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS NPN 45V 0.8A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-92
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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| BC337-40-B0 B1G |
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Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.8A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-92
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: TRANS NPN 45V 0.8A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-92
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
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| BC337-40 A1 |
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Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.8A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-92
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS NPN 45V 0.8A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-92
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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| BC337-40-B0 B1 |
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.8A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-92
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: TRANS NPN 45V 0.8A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-92
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
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| BC337-40-B0 A1G |
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Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.8A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-92
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS NPN 45V 0.8A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-92
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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| BC337-40 B1 |
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.8A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-92
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: TRANS NPN 45V 0.8A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-92
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
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| 1PGSMC5352 |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 5W DO214AB
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
Power - Max: 5 W
Supplier Device Package: DO-214AB (SMC)
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 15V 5W DO214AB
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
Power - Max: 5 W
Supplier Device Package: DO-214AB (SMC)
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| 1PGSMC5352 |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 5W DO214AB
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
Power - Max: 5 W
Supplier Device Package: DO-214AB (SMC)
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Description: DIODE ZENER 15V 5W DO214AB
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
Power - Max: 5 W
Supplier Device Package: DO-214AB (SMC)
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 15 V
на замовлення 1816 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 45.20 грн |
| 10+ | 37.26 грн |
| 100+ | 25.79 грн |
| 500+ | 20.21 грн |
| 1000+ | 17.63 грн |
| SMBJ13CAH |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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Мінімальне замовлення: 6000 шт
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