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MBRAD2045H MBRAD2045H Taiwan Semiconductor Corporation MBRAD2045H_A2303.pdf Description: DIODE SCHOTTKY 45V 20A THINDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Capacitance @ Vr, F: 927pF @ 4V, 1MHz
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
4500+30.97 грн
Мінімальне замовлення: 4500
В кошику  од. на суму  грн.
MBRAD2045H MBRAD2045H Taiwan Semiconductor Corporation MBRAD2045H_A2303.pdf Description: DIODE SCHOTTKY 45V 20A THINDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Capacitance @ Vr, F: 927pF @ 4V, 1MHz
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
5+80.62 грн
10+62.68 грн
100+51.01 грн
500+37.57 грн
1000+33.42 грн
2000+31.47 грн
Мінімальне замовлення: 5
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MBRAD20200H MBRAD20200H Taiwan Semiconductor Corporation MBRAD20200H_A2303.pdf Description: DIODE SCHOTTKY 200V 20A THINDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 295pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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MBRAD20200H MBRAD20200H Taiwan Semiconductor Corporation MBRAD20200H_A2303.pdf Description: DIODE SCHOTTKY 200V 20A THINDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 295pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
5+82.33 грн
10+61.61 грн
100+49.45 грн
500+36.50 грн
1000+32.47 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BZX84C18 RFG BZX84C18 RFG Taiwan Semiconductor Corporation BZX84C2V4 SERIES_F2001.pdf Description: DIODE ZENER 18V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12.6 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.39 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZX84C18 RFG BZX84C18 RFG Taiwan Semiconductor Corporation BZX84C2V4 SERIES_F2001.pdf Description: DIODE ZENER 18V 300MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12.6 V
на замовлення 5804 шт:
термін постачання 21-31 дні (днів)
20+17.15 грн
34+9.83 грн
100+6.11 грн
500+4.19 грн
1000+3.70 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
P4KE12CA A0G P4KE12CA A0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товару немає в наявності
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P4KE12CA B0G P4KE12CA B0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товару немає в наявності
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P4KE12CA R1G P4KE12CA R1G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товару немає в наявності
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PGSMAJ22AHF3G PGSMAJ22AHF3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 22VWM 35.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
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SMAJ26CAH SMAJ26CAH Taiwan Semiconductor Corporation SMAJH SERIES_A2102.pdf Description: TVS DIODE 26VWM 42.1VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
9+38.59 грн
15+22.88 грн
100+14.48 грн
500+10.18 грн
1000+9.08 грн
2000+8.16 грн
Мінімальне замовлення: 9
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HS1FL RVG HS1FL RVG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товару немає в наявності
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HS1FL RVG HS1FL RVG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товару немає в наявності
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SKL13BH SKL13BH Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 390 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SKL13B SKL13B Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 390 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
товару немає в наявності
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BC338-16 BC338-16 Taiwan Semiconductor Corporation BC337_thru_BC338-16_25_40_VerB14.pdf Description: TRANS NPN 25V 0.8A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
товару немає в наявності
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BC338-16-B0 B1G Taiwan Semiconductor Corporation BC337_thru_BC338-16_25_40_VerB14.pdf Description: TRANS NPN 25V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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BC338-25 A1 Taiwan Semiconductor Corporation BC337_thru_BC338-16_25_40_VerA12.pdf Description: TRANS NPN 25V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
товару немає в наявності
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BC338-25-B0 B1 Taiwan Semiconductor Corporation Description: TRANS NPN 25V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
товару немає в наявності
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BZX55C3V6 BZX55C3V6 Taiwan Semiconductor Corporation BZX55C2V0%20SERIES_E2301.pdf description Description: DIODE ZENER 3.6V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
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SR103 SR103 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
товару немає в наявності
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1SMB5931H 1SMB5931H Taiwan Semiconductor Corporation 1SMB5926H SERIES_A2102.pdf Description: DIODE ZENER 18V 3W DO214AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-214AA (SMB)
Grade: Automotive
Part Status: Active
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 13.7 V
Qualification: AEC-Q101
на замовлення 859 шт:
термін постачання 21-31 дні (днів)
8+43.74 грн
13+25.93 грн
100+16.53 грн
500+11.71 грн
Мінімальне замовлення: 8
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MBR2545CT-Y MBR2545CT-Y Taiwan Semiconductor Corporation MBR2545CT-Y SERIES_B2104.pdf Description: DIODE ARR SCHOTT 45V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 25
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
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BZX85C39 BZX85C39 Taiwan Semiconductor Corporation BZX85C3V3%20SERIES_H2301.pdf Description: DO-204AL (DO-41), 1300MW, 5%, SM
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 27 V
товару немає в наявності
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BAT201M3 RRG BAT201M3 RRG Taiwan Semiconductor Corporation BAT201M3_A2211.pdf Description: DIODE SCHOTTKY 20V 1A SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 290 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
товару немає в наявності
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SS36H SS36H Taiwan Semiconductor Corporation SS32H%2520SERIES_A2102.pdf Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3055 шт:
термін постачання 21-31 дні (днів)
7+55.75 грн
10+33.28 грн
100+21.44 грн
500+15.34 грн
1000+13.80 грн
Мінімальне замовлення: 7
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BYG23MH BYG23MH Taiwan Semiconductor Corporation BYG23MH_A2102.pdf Description: 65NS, 1.5A, 1000V, HIGH EFFICIEN
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
7500+6.30 грн
Мінімальне замовлення: 7500
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FR304GH FR304GH Taiwan Semiconductor Corporation FR301G SERIES_H2105.pdf Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3750 шт:
термін постачання 21-31 дні (днів)
1250+11.84 грн
2500+10.32 грн
3750+9.76 грн
Мінімальне замовлення: 1250
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FR306GH FR306GH Taiwan Semiconductor Corporation FR301G SERIES_H2105.pdf Description: DIODE STANDARD 800V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
1250+11.30 грн
2500+8.56 грн
Мінімальне замовлення: 1250
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SMBJ170 SMBJ170 Taiwan Semiconductor Corporation Description: 600W, 210V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 304V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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RS1MFL RS1MFL Taiwan Semiconductor Corporation RS1AFL SERIES_B2103.pdf Description: DIODE STANDARD 1000V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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RS1MFL RS1MFL Taiwan Semiconductor Corporation RS1AFL SERIES_B2103.pdf Description: DIODE STANDARD 1000V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
18+19.73 грн
32+10.57 грн
100+6.08 грн
Мінімальне замовлення: 18
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SMAJ7.5 SMAJ7.5 Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: 400W, 9.3V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 14.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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TSC966CW Taiwan Semiconductor Corporation Description: SOT-223, 600V, 0.3A, NPN BIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
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TSC966CT A3G TSC966CT A3G Taiwan Semiconductor Corporation TSC966_F1801.pdf Description: TRANS NPN 400V 0.3A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
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TSC966CT B0G TSC966CT B0G Taiwan Semiconductor Corporation TSC966_F1801.pdf Description: TRANS NPN 400V 0.3A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
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TSC873CW Taiwan Semiconductor Corporation Description: SOT-223, 600V, 0.3A, NPN BIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 250mA, 10V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
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MBRF30150CT-Y MBRF30150CT-Y Taiwan Semiconductor Corporation MBRF3045CT-Y SERIES_E2105.pdf Description: DIODE ARR SCHOTTKY 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
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MBRF30150CTH MBRF30150CTH Taiwan Semiconductor Corporation Description: DIODE ARR SCHOTTKY 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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TSF30L150C TSF30L150C Taiwan Semiconductor Corporation TSF30L100C SERIES_C2105.pdf Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
на замовлення 331 шт:
термін постачання 21-31 дні (днів)
4+101.20 грн
50+78.24 грн
100+62.01 грн
Мінімальне замовлення: 4
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BZT52C4V3S BZT52C4V3S Taiwan Semiconductor Corporation BZT52C2V4S%20SERIES_K2411.pdf Description: DIODE ZENER 4.3V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
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SR1660H SR1660H Taiwan Semiconductor Corporation Description: DIODE ARR SCHOTT 60V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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SRS1660H Taiwan Semiconductor Corporation SRS1620H%20SERIES_A2103.pdf Description: 16A, 60V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SRF1660H Taiwan Semiconductor Corporation SRF1620%20SERIES_J2105.pdf Description: 16A, 60V, SCHOTTKY RECTIFIER
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SRA1660HC0G SRA1660HC0G Taiwan Semiconductor Corporation SRA1620%20SERIES_K2103.pdf Description: DIODE SCHOTTKY 60V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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MBRS1660H MBRS1660H Taiwan Semiconductor Corporation Description: 16A, 60V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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SRAF1660H SRAF1660H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 60V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SRS1660HMNG SRS1660HMNG Taiwan Semiconductor Corporation SRS1620%20SERIES_L2103.pdf Description: DIODE ARRAY SCHOTTKY 60V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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MBR10H150CTH MBR10H150CTH Taiwan Semiconductor Corporation Description: DIODE ARR SCHOT 150V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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MBRF20H150CTH Taiwan Semiconductor Corporation MBRF20H100CT%20SERIES_I2105.pdf Description: 20A, 150V, SCHOTTKY RECTIFIER
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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MBRS20H150CT MBRS20H150CT Taiwan Semiconductor Corporation MBRS20H100CT SERIES_J2103.pdf Description: DIODE ARR SCHOT 150V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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MBRF10H150CTH Taiwan Semiconductor Corporation MBRF10H100CT%20SERIES_I2105.pdf Description: 10A, 150V, SCHOTTKY RECTIFIER
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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MBR20H150CTH MBR20H150CTH Taiwan Semiconductor Corporation Description: DIODE ARR SCHOT 150V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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MBRF10H150CT MBRF10H150CT Taiwan Semiconductor Corporation MBRF1035CT%20SERIES_M2105.pdf Description: DIODE ARRAY SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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TSM070NH04CR RLG TSM070NH04CR RLG Taiwan Semiconductor Corporation TSM070NH04CR_E2207.pdf Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 25 V
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TSM070NH04CR RLG TSM070NH04CR RLG Taiwan Semiconductor Corporation TSM070NH04CR_E2207.pdf Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 25 V
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
3+118.36 грн
10+72.43 грн
100+48.37 грн
500+35.72 грн
1000+32.61 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TSM019NH04CR RLG TSM019NH04CR RLG Taiwan Semiconductor Corporation TSM019NH04CR_E2207.pdf Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6029 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+90.13 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TSM019NH04CR RLG TSM019NH04CR RLG Taiwan Semiconductor Corporation TSM019NH04CR_E2207.pdf Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6029 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2+271.87 грн
10+171.62 грн
100+120.17 грн
500+99.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TSM032NH04CR RLG TSM032NH04CR RLG Taiwan Semiconductor Corporation TSM032NH04CR_D2207.pdf Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2896 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+50.85 грн
5000+47.06 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TSM032NH04CR RLG TSM032NH04CR RLG Taiwan Semiconductor Corporation TSM032NH04CR_D2207.pdf Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2896 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2+174.10 грн
10+107.53 грн
100+73.36 грн
500+55.13 грн
1000+54.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MBRAD2045H MBRAD2045H_A2303.pdf
MBRAD2045H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 20A THINDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Capacitance @ Vr, F: 927pF @ 4V, 1MHz
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4500+30.97 грн
Мінімальне замовлення: 4500
В кошику  од. на суму  грн.
MBRAD2045H MBRAD2045H_A2303.pdf
MBRAD2045H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 20A THINDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Capacitance @ Vr, F: 927pF @ 4V, 1MHz
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+80.62 грн
10+62.68 грн
100+51.01 грн
500+37.57 грн
1000+33.42 грн
2000+31.47 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MBRAD20200H MBRAD20200H_A2303.pdf
MBRAD20200H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 20A THINDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 295pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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MBRAD20200H MBRAD20200H_A2303.pdf
MBRAD20200H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 20A THINDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 295pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+82.33 грн
10+61.61 грн
100+49.45 грн
500+36.50 грн
1000+32.47 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BZX84C18 RFG BZX84C2V4 SERIES_F2001.pdf
BZX84C18 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12.6 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.39 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZX84C18 RFG BZX84C2V4 SERIES_F2001.pdf
BZX84C18 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 300MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12.6 V
на замовлення 5804 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+17.15 грн
34+9.83 грн
100+6.11 грн
500+4.19 грн
1000+3.70 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
P4KE12CA A0G P4KE%20SERIES_N2104.pdf
P4KE12CA A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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P4KE12CA B0G P4KE%20SERIES_N2104.pdf
P4KE12CA B0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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P4KE12CA R1G P4KE%20SERIES_N2104.pdf
P4KE12CA R1G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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PGSMAJ22AHF3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ22AHF3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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SMAJ26CAH SMAJH SERIES_A2102.pdf
SMAJ26CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 26VWM 42.1VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.59 грн
15+22.88 грн
100+14.48 грн
500+10.18 грн
1000+9.08 грн
2000+8.16 грн
Мінімальне замовлення: 9
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HS1FL RVG HS1AL%20SERIES_C2103.pdf
HS1FL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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HS1FL RVG HS1AL%20SERIES_C2103.pdf
HS1FL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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SKL13BH
SKL13BH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 390 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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SKL13B
SKL13B
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 390 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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BC338-16 BC337_thru_BC338-16_25_40_VerB14.pdf
BC338-16
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 25V 0.8A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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BC338-16-B0 B1G BC337_thru_BC338-16_25_40_VerB14.pdf
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 25V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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BC338-25 A1 BC337_thru_BC338-16_25_40_VerA12.pdf
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 25V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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BC338-25-B0 B1
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 25V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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BZX55C3V6 description BZX55C2V0%20SERIES_E2301.pdf
BZX55C3V6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.6V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
товару немає в наявності
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SR103
SR103
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
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1SMB5931H 1SMB5926H SERIES_A2102.pdf
1SMB5931H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 3W DO214AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-214AA (SMB)
Grade: Automotive
Part Status: Active
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 13.7 V
Qualification: AEC-Q101
на замовлення 859 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+43.74 грн
13+25.93 грн
100+16.53 грн
500+11.71 грн
Мінімальне замовлення: 8
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MBR2545CT-Y MBR2545CT-Y SERIES_B2104.pdf
MBR2545CT-Y
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 45V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 25
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
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BZX85C39 BZX85C3V3%20SERIES_H2301.pdf
BZX85C39
Виробник: Taiwan Semiconductor Corporation
Description: DO-204AL (DO-41), 1300MW, 5%, SM
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 27 V
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BAT201M3 RRG BAT201M3_A2211.pdf
BAT201M3 RRG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 290 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
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SS36H SS32H%2520SERIES_A2102.pdf
SS36H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3055 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+55.75 грн
10+33.28 грн
100+21.44 грн
500+15.34 грн
1000+13.80 грн
Мінімальне замовлення: 7
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BYG23MH BYG23MH_A2102.pdf
BYG23MH
Виробник: Taiwan Semiconductor Corporation
Description: 65NS, 1.5A, 1000V, HIGH EFFICIEN
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7500+6.30 грн
Мінімальне замовлення: 7500
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FR304GH FR301G SERIES_H2105.pdf
FR304GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1250+11.84 грн
2500+10.32 грн
3750+9.76 грн
Мінімальне замовлення: 1250
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FR306GH FR301G SERIES_H2105.pdf
FR306GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1250+11.30 грн
2500+8.56 грн
Мінімальне замовлення: 1250
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SMBJ170
SMBJ170
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 210V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 304V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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RS1MFL RS1AFL SERIES_B2103.pdf
RS1MFL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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RS1MFL RS1AFL SERIES_B2103.pdf
RS1MFL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+19.73 грн
32+10.57 грн
100+6.08 грн
Мінімальне замовлення: 18
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SMAJ7.5 SMAJ%20SERIES_U2102.pdf
SMAJ7.5
Виробник: Taiwan Semiconductor Corporation
Description: 400W, 9.3V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 14.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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TSC966CW
Виробник: Taiwan Semiconductor Corporation
Description: SOT-223, 600V, 0.3A, NPN BIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
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TSC966CT A3G TSC966_F1801.pdf
TSC966CT A3G
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 400V 0.3A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
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TSC966CT B0G TSC966_F1801.pdf
TSC966CT B0G
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 400V 0.3A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
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TSC873CW
Виробник: Taiwan Semiconductor Corporation
Description: SOT-223, 600V, 0.3A, NPN BIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 250mA, 10V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
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MBRF30150CT-Y MBRF3045CT-Y SERIES_E2105.pdf
MBRF30150CT-Y
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTTKY 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
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MBRF30150CTH
MBRF30150CTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTTKY 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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TSF30L150C TSF30L100C SERIES_C2105.pdf
TSF30L150C
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
на замовлення 331 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+101.20 грн
50+78.24 грн
100+62.01 грн
Мінімальне замовлення: 4
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BZT52C4V3S BZT52C2V4S%20SERIES_K2411.pdf
BZT52C4V3S
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
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SR1660H
SR1660H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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SRS1660H SRS1620H%20SERIES_A2103.pdf
Виробник: Taiwan Semiconductor Corporation
Description: 16A, 60V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SRF1660H SRF1620%20SERIES_J2105.pdf
Виробник: Taiwan Semiconductor Corporation
Description: 16A, 60V, SCHOTTKY RECTIFIER
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SRA1660HC0G SRA1620%20SERIES_K2103.pdf
SRA1660HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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MBRS1660H
MBRS1660H
Виробник: Taiwan Semiconductor Corporation
Description: 16A, 60V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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SRAF1660H
SRAF1660H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SRS1660HMNG SRS1620%20SERIES_L2103.pdf
SRS1660HMNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 60V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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MBR10H150CTH
MBR10H150CTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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MBRF20H150CTH MBRF20H100CT%20SERIES_I2105.pdf
Виробник: Taiwan Semiconductor Corporation
Description: 20A, 150V, SCHOTTKY RECTIFIER
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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MBRS20H150CT MBRS20H100CT SERIES_J2103.pdf
MBRS20H150CT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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MBRF10H150CTH MBRF10H100CT%20SERIES_I2105.pdf
Виробник: Taiwan Semiconductor Corporation
Description: 10A, 150V, SCHOTTKY RECTIFIER
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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MBR20H150CTH
MBR20H150CTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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MBRF10H150CT MBRF1035CT%20SERIES_M2105.pdf
MBRF10H150CT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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TSM070NH04CR RLG TSM070NH04CR_E2207.pdf
TSM070NH04CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 25 V
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TSM070NH04CR RLG TSM070NH04CR_E2207.pdf
TSM070NH04CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 25 V
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+118.36 грн
10+72.43 грн
100+48.37 грн
500+35.72 грн
1000+32.61 грн
Мінімальне замовлення: 3
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TSM019NH04CR RLG TSM019NH04CR_E2207.pdf
TSM019NH04CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6029 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+90.13 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TSM019NH04CR RLG TSM019NH04CR_E2207.pdf
TSM019NH04CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6029 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+271.87 грн
10+171.62 грн
100+120.17 грн
500+99.70 грн
Мінімальне замовлення: 2
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TSM032NH04CR RLG TSM032NH04CR_D2207.pdf
TSM032NH04CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2896 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+50.85 грн
5000+47.06 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TSM032NH04CR RLG TSM032NH04CR_D2207.pdf
TSM032NH04CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2896 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+174.10 грн
10+107.53 грн
100+73.36 грн
500+55.13 грн
1000+54.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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