Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (24892) > Сторінка 308 з 415
| Фото | Назва | Виробник | Інформація |
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1.5KE120H | Taiwan Semiconductor Corporation |
Description: 1500W, 120V, 10%, UNIDIRECTIONAL Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 9.1A Voltage - Reverse Standoff (Typ): 97.2V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 108V Voltage - Clamping (Max) @ Ipp: 173V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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| SMCJ20H | Taiwan Semiconductor Corporation |
 Description: 1500W, 24.7V, 10%, UNIDIRECTIONAPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive, Telecom Current - Peak Pulse (10/1000µs): 43A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 35.8V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
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1.5KE220H | Taiwan Semiconductor Corporation |
Description: 1500W, 220V, 10%, UNIDIRECTIONAL Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.5A Voltage - Reverse Standoff (Typ): 175V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 198V Voltage - Clamping (Max) @ Ipp: 344V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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BZV55C16 L0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 16V 500MW MINI MELF Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: Mini MELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 12 V |
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P6SMB24CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20.5VWM 33.2V DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 19A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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BC817-16 RFG | Taiwan Semiconductor Corporation |
Description: TRANS NPN 45V 0.5A SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BC817-16 RFG | Taiwan Semiconductor Corporation |
Description: TRANS NPN 45V 0.5A SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW |
на замовлення 5940 шт: термін постачання 21-31 дні (днів) |
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SMAJ33CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33VWM 53.3VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 7.5A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6580 шт: термін постачання 21-31 дні (днів) |
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ZM4742A L0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 1W MELF Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: MELF Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V |
товару немає в наявності |
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ZM4742A | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 1W MELF Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: MELF Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V |
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BZT55C12 | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 500MW QMMELF Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: QMMELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SMBJ51AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 51VWM 82.4VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 7.6A Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 56.7V Voltage - Clamping (Max) @ Ipp: 82.4V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZX85C18 R0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 18V 1.3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZX85C18 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 18V 1.3W DO204AL Packaging: Tape & Box (TB) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SS515FSH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 5A SOD128 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 126pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
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SS515ALH | Taiwan Semiconductor Corporation |
Description: 5A, 150V, SCHOTTKY RECTIFIER Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 126pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N4936G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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1N4752G R0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 1W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TA) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| TSM900N06CP | Taiwan Semiconductor Corporation |
Description: 60V, 11A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V |
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| TSM900N06CH | Taiwan Semiconductor Corporation |
Description: 60V, 11A, SINGLE N-CHANNEL POWER Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-251S (IPAK SL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| TSM900N10CP | Taiwan Semiconductor Corporation |
Description: 100V, 15A, SINGLE N-CHANNEL POWE Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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BC807-16 RFG | Taiwan Semiconductor Corporation |
Description: TRANS PNP 45V 0.5A SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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BC807-16 RFG | Taiwan Semiconductor Corporation |
Description: TRANS PNP 45V 0.5A SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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ES2BFSH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 100V 2A SOD128 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 28pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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ES2BA | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 100V 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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GBPC5010 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 50A GBPC Packaging: Tray Package / Case: 4-Square, GBPC Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 352 шт: термін постачання 21-31 дні (днів) |
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BZX55C7V5 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 7.5V 500MW DO35 Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N4737G A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 7.5V 1W DO204AL Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TA) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 4 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZV55B13 L0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13V 500MW MINI MELF Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 26 Ohms Supplier Device Package: Mini MELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZX79C15 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 15V 500MW DO35 Packaging: Tape & Box (TB) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SSB44 R5G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 4A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 235pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 4 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
на замовлення 2550 шт: термін постачання 21-31 дні (днів) |
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SSB44 | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 4A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 235pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 4 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
на замовлення 3986 шт: термін постачання 21-31 дні (днів) |
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BZX55C75 | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 75V 500MW DO35 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 170 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 56 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZX55C75 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 75V 500MW DO35 Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 170 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 56 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZX55C3V9 | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.9V 500MW DO35 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZX55C3V9 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.9V 500MW DO35 Packaging: Tape & Box (TB) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD17C27PH | Taiwan Semiconductor Corporation |
Description: SUB SMA, 800MW, 6%, ZENER DIODE Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: Sub SMA Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 20 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C27PH | Taiwan Semiconductor Corporation |
Description: SUB SMA, 1000MW, 6%, ZENER DIODE Packaging: Tape & Reel (TR) Tolerance: ±7.04% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: Sub SMA Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SK35B | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 3A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SK35BH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 3A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| SFAF1004GH | Taiwan Semiconductor Corporation |
Description: 35NS, 10A, 200V, SUPER FAST RECO Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 170pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| SFAF1604GH | Taiwan Semiconductor Corporation |
Description: 35NS, 16A, 200V, SUPER FAST RECO Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 130pF @ 4V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SFAF508G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 5A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 70pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SFAF806G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 8A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SFAF808G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 8A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SFAF1004G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 10A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 170pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SFAF2002G | Taiwan Semiconductor Corporation |
Description: 35NS, 20A, 100V, SUPER FAST RECO Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 170pF @ 4V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SFAF1001G C0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 10A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 170pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SFAF1001GHC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 10A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 170pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SFAF1002G C0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 10A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 170pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SFAF1002GHC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 10A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 170pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SFAF1003GHC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 10A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 170pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SFAF1004GHC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 10A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 170pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SFAF1005G C0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 10A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SFAF1005GHC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 10A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SFAF1006G C0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 10A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SFAF1006GHC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 10A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SFAF1007G C0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 500V 10A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SFAF1007GHC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 500V 10A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 500 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SFAF1601G C0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 16A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 130pF @ 4V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. |
| 1.5KE120H |
Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 120V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.1A
Voltage - Reverse Standoff (Typ): 97.2V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 108V
Voltage - Clamping (Max) @ Ipp: 173V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 1500W, 120V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.1A
Voltage - Reverse Standoff (Typ): 97.2V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 108V
Voltage - Clamping (Max) @ Ipp: 173V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ20H |
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Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 24.7V, 10%, UNIDIRECTIONA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 43A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: 1500W, 24.7V, 10%, UNIDIRECTIONA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 43A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 35.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE220H |
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Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 220V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.5A
Voltage - Reverse Standoff (Typ): 175V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 198V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 1500W, 220V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.5A
Voltage - Reverse Standoff (Typ): 175V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 198V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BZV55C16 L0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Description: DIODE ZENER 16V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB24CAH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20.5VWM 33.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 19A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20.5VWM 33.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 19A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| BC817-16 RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Description: TRANS NPN 45V 0.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.07 грн |
| BC817-16 RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Description: TRANS NPN 45V 0.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
на замовлення 5940 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 14.91 грн |
| 34+ | 9.00 грн |
| 100+ | 5.54 грн |
| 500+ | 3.81 грн |
| 1000+ | 3.35 грн |
| SMAJ33CAH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6580 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.61 грн |
| 16+ | 18.90 грн |
| 100+ | 8.02 грн |
| 500+ | 7.13 грн |
| 1000+ | 6.74 грн |
| ZM4742A L0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 1W MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: MELF
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
Description: DIODE ZENER 12V 1W MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: MELF
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
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| ZM4742A |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 1W MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: MELF
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
Description: DIODE ZENER 12V 1W MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: MELF
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
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| BZT55C12 |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW QMMELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: QMMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Description: DIODE ZENER 12V 500MW QMMELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: QMMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
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| SMBJ51AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 51VWM 82.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| BZX85C18 R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 1.3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 13 V
Description: DIODE ZENER 18V 1.3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 13 V
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| BZX85C18 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 1.3W DO204AL
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 13 V
Description: DIODE ZENER 18V 1.3W DO204AL
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 13 V
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| SS515FSH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 126pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 5A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 126pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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| SS515ALH |
|
Виробник: Taiwan Semiconductor Corporation
Description: 5A, 150V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 126pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: 5A, 150V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 126pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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| 1N4936G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 3.99 грн |
| 1N4752G R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V
Description: DIODE ZENER 33V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V
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| TSM900N06CP |
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 11A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Description: 60V, 11A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
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| TSM900N06CH |
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 11A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251S (IPAK SL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Description: 60V, 11A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251S (IPAK SL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
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| TSM900N10CP |
Виробник: Taiwan Semiconductor Corporation
Description: 100V, 15A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
Description: 100V, 15A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
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| BC807-16 RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TRANS PNP 45V 0.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Description: TRANS PNP 45V 0.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.55 грн |
| 6000+ | 2.20 грн |
| 9000+ | 2.07 грн |
| BC807-16 RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TRANS PNP 45V 0.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Description: TRANS PNP 45V 0.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.70 грн |
| 33+ | 9.37 грн |
| 100+ | 5.78 грн |
| 500+ | 3.96 грн |
| 1000+ | 3.49 грн |
| ES2BFSH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
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| ES2BA |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE STANDARD 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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| GBPC5010 |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 50A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 50A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 352 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 405.83 грн |
| 10+ | 261.24 грн |
| 200+ | 174.53 грн |
| BZX55C7V5 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Description: DIODE ZENER 7.5V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
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| 1N4737G A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
Description: DIODE ZENER 7.5V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
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| BZV55B13 L0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Description: DIODE ZENER 13V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
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| BZX79C15 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Description: DIODE ZENER 15V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
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| SSB44 R5G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 4A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 235pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 4A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 235pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
на замовлення 2550 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 850+ | 20.47 грн |
| 1700+ | 18.11 грн |
| 2550+ | 17.28 грн |
| SSB44 |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 235pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 235pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
на замовлення 3986 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.97 грн |
| 12+ | 27.06 грн |
| 100+ | 22.90 грн |
| 500+ | 15.95 грн |
| 1000+ | 14.15 грн |
| BZX55C75 |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Description: DIODE ZENER 75V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
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| BZX55C75 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Description: DIODE ZENER 75V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
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| BZX55C3V9 |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Description: DIODE ZENER 3.9V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
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од. на суму грн.
| BZX55C3V9 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Description: DIODE ZENER 3.9V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
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| BZD17C27PH |
|
Виробник: Taiwan Semiconductor Corporation
Description: SUB SMA, 800MW, 6%, ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: SUB SMA, 800MW, 6%, ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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| BZD27C27PH |
|
Виробник: Taiwan Semiconductor Corporation
Description: SUB SMA, 1000MW, 6%, ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±7.04%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Description: SUB SMA, 1000MW, 6%, ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±7.04%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
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| SK35B |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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| SK35BH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
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| SFAF1004GH |
|
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 10A, 200V, SUPER FAST RECO
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: 35NS, 10A, 200V, SUPER FAST RECO
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.79 грн |
| 10+ | 57.90 грн |
| 100+ | 45.05 грн |
| 500+ | 35.84 грн |
| 1000+ | 29.19 грн |
| SFAF1604GH |
|
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 16A, 200V, SUPER FAST RECO
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: 35NS, 16A, 200V, SUPER FAST RECO
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 109.90 грн |
| 10+ | 88.44 грн |
| 100+ | 70.36 грн |
| 500+ | 55.87 грн |
| 1000+ | 47.41 грн |
| SFAF508G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 5A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 5A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.72 грн |
| 50+ | 53.22 грн |
| 100+ | 38.62 грн |
| 500+ | 30.28 грн |
| 1000+ | 25.78 грн |
| SFAF806G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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| SFAF808G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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| SFAF1004G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.79 грн |
| 10+ | 57.90 грн |
| 100+ | 45.05 грн |
| 500+ | 35.84 грн |
| 1000+ | 29.19 грн |
| SFAF2002G |
|
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 20A, 100V, SUPER FAST RECO
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: 35NS, 20A, 100V, SUPER FAST RECO
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику
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| SFAF1001G C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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В кошику
од. на суму грн.
| SFAF1001GHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| SFAF1002G C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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од. на суму грн.
| SFAF1002GHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 100V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
| SFAF1003GHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 150V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| SFAF1004GHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| SFAF1005G C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE GEN PURP 300V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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| SFAF1005GHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 300V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Grade: Automotive
Qualification: AEC-Q101
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| SFAF1006G C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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| SFAF1006GHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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| SFAF1007G C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Description: DIODE GEN PURP 500V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
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В кошику
од. на суму грн.
| SFAF1007GHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 500V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Grade: Automotive
Qualification: AEC-Q101
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| SFAF1601G C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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